CN116344661B - InAs-InAsSb class-II superlattice infrared detector material structure working at high temperature - Google Patents
InAs-InAsSb class-II superlattice infrared detector material structure working at high temperature Download PDFInfo
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- CN116344661B CN116344661B CN202211685509.5A CN202211685509A CN116344661B CN 116344661 B CN116344661 B CN 116344661B CN 202211685509 A CN202211685509 A CN 202211685509A CN 116344661 B CN116344661 B CN 116344661B
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- 239000000463 material Substances 0.000 title claims abstract description 17
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 58
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 238000010521 absorption reaction Methods 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 229910005542 GaSb Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a high-temperature working InAs-InAsSb class-II superlattice infrared detector material structure which sequentially comprises an n-type doped InAs/InAsSb lower electrode layer, an undoped n-type InAs/InAsSb absorption layer, an AlAsSb barrier layer B and an undoped n-type InAs/InAsSb upper electrode layer from bottom to top. The structure can obviously reduce the generation-recombination (G-R) and the Shore-Reed-Hall (SRH) dark current in the material, and has longer minority carrier lifetime. Can be prepared using a simpler MBE shutter control growth method. The detector has lower Ga-related material defects, can remarkably improve the working temperature of the detector, improve the size, weight, power consumption and cost (SWaPC) of the detector component, and improve the service life and performance of the detector.
Description
Technical Field
The invention belongs to the technical field of superlattice-like infrared detectors, and particularly relates to a material structure of an InAs-InAsSb superlattice-like infrared detector working at high temperature.
Background
The infrared imaging system has the advantages of strong anti-interference capability, strong penetrating power, good concealment, suitability for special occasions and the like, and has been widely applied. The early-developed infrared detector has the problems of single wavelength, low quantum efficiency, low working temperature and the like, and greatly limits the application direction of the infrared detector technology. Currently, third generation infrared detectors require refrigerated and uncooled focal planes with high performance, high resolution, and multi-band detection capabilities. In recent years, higher demands are placed on miniaturization, low power consumption and fast start-up of infrared detectors, and lowering dark current in detector materials to raise operating temperature is one of the main directions of the technical research. InAs (InAs) x Sb 1-x Is a typical III-V ternary compound semiconductor material and is also an intrinsic III-V compound semiconductor with the minimum forbidden bandwidth discovered at present. The forbidden band width of InAsxSb1-x can reach 0.099eV (corresponding to the cut-off wave)Length of 12.5 μm) or even smaller. Conventional Mercury Cadmium Telluride (MCT) and indium antimonide (InSb) detectors need to be combined with a refrigerator to maintain working at a low liquid nitrogen temperature of 77K, and if the working temperature is increased, the dark current of the detector is rapidly increased exponentially, so that the service performance of the detector is seriously affected. Therefore, dark current caused by the detector material or device technology is reduced, the detection performance of the same dark current level can be maintained at a higher working temperature, so that the refrigeration load power consumption of the refrigerator is obviously improved, or the improved detection performance is obtained at the same low working temperature (such as 77K), and thus, the using targets of miniaturization, low power consumption and quick starting of the infrared detector can be realized.
The system (lattice constant is close to +.>InAs, gaSb, alSb) of the Sb-based class II superlattice materials have great potential and design diversity that allow flexible adjustment of the bandgap width and design of more complex material structures to achieve high temperature or dual/multi-band detection requirements.
Disclosure of Invention
In order to solve the technical problems, the invention adopts the following technical scheme: the high-temperature working InAs-InAsSb type superlattice infrared detector material structure comprises an n-type doped InAs/InAsSb lower electrode layer, an undoped n-type InAs/InAsSb absorption layer, an AlAsSb barrier layer B and an undoped n-type InAs/InAsSb upper electrode layer from bottom to top.
As the optimization of the technical scheme, the semiconductor device further comprises a GaAs substrate, a GaAs buffer layer and a GaSb buffer layer which are sequentially arranged, wherein the GaSb buffer layer is connected with the n-type doped InAs/InAsSb lower electrode layer.
As a preferable aspect of the above-described technical solution, the GaAs buffer layer has a thickness of 0.25 μm.
As a preferable aspect of the above-described technical solution, the thickness of the GaSb buffer layer is 1.2 μm.
As the preferable choice of the technical proposal, the n-type doped InAs/InAsSb lower electrode layerIs InAs/InAs 0.66 Sb 0.34 ，InAs/InAs 0.66 Sb 0.34 Is of the thickness of
As the preferable choice of the technical proposal, the undoped InAs/InAsSb absorption layer is InAs/InAs 0.66 Sb 0.34 ，InAs/InAs 0.66 Sb 0.34 Is of the thickness of
As a preferable mode of the technical scheme, the AlAsSb barrier layer B is AlAs 0.085 Sb 0.915 In which a concentration of 1E+15cm is doped -3 Be, alAs of (2) 0.085 Sb 0.915 Is 120nm thick.
As the preferable choice of the technical proposal, the upper electrode layer of the non-doped InAs/InAsSb is InAs/InAs 0.66 Sb 0.34 ，InAs/InAs 0.66 Sb 0.34 Is of the thickness of
The working principle of the invention is as follows: the n-type InAs/InAsSb doped lower electrode layer is used as a contact electrode of the detector, the n-type InAs/InAsSb undoped absorbing layer is used as an infrared absorption main layer of the detector, the AlAsSb barrier layer B is used for blocking free flow of majority carrier electrons in conduction bands of the absorbing layer and the contact layer, so that dark current is reduced, and the n-type InAs/InAsSb undoped upper electrode layer is used as the contact electrode of the detector. The conduction band barrier effect can be formed between the n-type doped InAs/InAsSb lower electrode layer and the non-doped n-type InAs/InAsSb absorption layer, so that G-R and SRH dark currents formed in the conduction band due to thermal excitation or material defects are effectively prevented.
The beneficial effects of the invention are as follows: the structure can obviously reduce the generation-recombination (G-R) and the Shore-Reed-Hall (SRH) dark current in the material, and has longer minority carrier lifetime. Can be prepared using a simpler MBE shutter control growth method. The detector has lower Ga-related material defects, can remarkably improve the working temperature of the detector, improve the size, weight, power consumption and cost (SWaPC) of the detector component, and improve the service life and performance of the detector.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
fig. 2 is a schematic diagram of the energy band of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Example 1
The method adopts MBE to carry out epitaxial growth of infrared detector materials, and comprises the following specific steps in sequence:
1) GaAs (100) with low cost and high transmission to infrared signals is adopted as a substrate;
2) Epitaxially growing a GaAs buffer layer of about 0.25 μm;
3) Carrying out As/Sb exchange treatment on the surface to gradually convert the surface into GaSb surface reconstruction;
4) Epitaxially growing a 1.2 μm GaSb buffer layer at a suitable temperature;
5) Epitaxial growth of 20 cycle n-type-InAs/InAs 0.66 Sb 0.34 A bottom contact layer, wherein Te is doped in the InAs layer: 1E+17cm -3 ；
6) Epitaxial growth 525 cycles of approximately 2.6 μm undoped n-type-InAs/InAs 0.66 Sb 0.34 An absorption layer;
7) Epitaxial growth of 120nm AlAs 0.085 Sb 0.915 (Be doped: 1E+15cm) -3 ) The layer acts as a unipolar electron barrier layer;
epitaxial growth of about 67nm undoped n-type for 16 cycles-InAs/InAs 0.66 Sb 0.34 As the upper contact electrode layer.
Example 1 an energy band structure diagram of a material structure of an InAs-InAsSb type superlattice infrared detector is shown in fig. 2, in an ideal case, the energy level difference between the valence band of the barrier layer B and the valence band of the absorption layer should be zero, the potential barrier is all located in the conduction band, and the photo-generated minority carrier holes in the valence band can freely move to reach both ends of the detector electrode to participate in the generation of infrared optical signals. The barrier can block free movement of photo-generated or thermally generated majority carrier electrons of the electrode layer and the absorption layer, and only photo-generated minority carrier holes of the absorption region can reach two ends of the electrode in an unimpeded manner to generate photo-generated electric signals.
It should be noted that technical features such as MBE and the like related to the present application should be considered as the prior art, and specific structures, working principles, and control manners and spatial arrangements possibly related to the technical features should be selected conventionally in the art, and should not be considered as the point of the present application, where the present application is not further specifically developed.
While the preferred embodiments of the present invention have been described in detail, it should be appreciated that numerous modifications and variations may be made in accordance with the principles of the present invention by those skilled in the art without undue burden, and thus, all technical solutions which may be obtained by logic analysis, reasoning or limited experimentation based on the principles of the present invention as defined by the claims are within the scope of protection as defined by the present invention.
Claims (1)
1. The high-temperature working InAs-InAsSb type superlattice infrared detector material structure is characterized by sequentially comprising an n-type doped InAs/InAsSb lower electrode layer, an undoped n-type InAs/InAsSb absorption layer, an AlAsSb barrier layer B, an undoped n-type InAs/InAsSb upper electrode layer, a GaAs substrate, a GaAs buffer layer and a GaSb buffer layer which are sequentially arranged, wherein the GaSb buffer layer is connected with the n-type doped InAs/InAsSb lower electrode layer, the thickness of the GaAs buffer layer is 0.25 mu m, the thickness of the GaSb buffer layer is 1.2 mu m, and the n-type doped InAs/InAsSb lower electrode layer is InAs/InAs 0.66 Sb 0.34 ，InAs/InAs 0.66 Sb 0.34 Is of the thickness ofThe non-doped n-type InAs/InAsSb absorption layer is InAs/InAs 0.66 Sb 0.34 ，InAs/InAs 0.66 Sb 0.34 Is +.>The AlAsSb barrier layer B is AlAs 0.085 Sb 0.915 In which a concentration of 1E+15cm is doped -3 Be, alAs of (2) 0.085 Sb 0.915 The thickness of the non-doped InAs/InAsSb upper electrode layer is 120nm, the non-doped InAs/InAs upper electrode layer is InAs/InAs 0.66 Sb 0.34 ，InAs/InAs 0.66 Sb 0.34 Is +.>
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012209357A (en) * | 2011-03-29 | 2012-10-25 | Asahi Kasei Electronics Co Ltd | Quantum type infrared sensor |
| CN106684200A (en) * | 2016-12-30 | 2017-05-17 | 云南师范大学 | Fabrication method of three-color infrared detector |
| CN106711249A (en) * | 2016-12-30 | 2017-05-24 | 云南师范大学 | Preparation method of two-color infrared detector based on indium-arsenic-antimony (InAsSb) material |
| CN106784117A (en) * | 2016-12-30 | 2017-05-31 | 云南师范大学 | A kind of preparation method of the wave band Infrared Detectors of shortwave/medium wave/long wave three |
| CN114664960A (en) * | 2022-05-26 | 2022-06-24 | 苏州焜原光电有限公司 | Second-class superlattice infrared detector without stress layer and preparation method |
| CN115513328A (en) * | 2022-10-27 | 2022-12-23 | 中科爱毕赛思(常州)光电科技有限公司 | High-temperature infrared detector with improved potential barrier and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692183B2 (en) * | 2008-03-07 | 2010-04-06 | Mp Technologies, Llc | Polarity inversion of type-II InAs/GaSb superlattice photodiodes |
| US9196769B2 (en) * | 2013-06-25 | 2015-11-24 | L-3 Communications Cincinnati Electronics Corporation | Superlattice structures and infrared detector devices incorporating the same |
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- 2022-12-27 CN CN202211685509.5A patent/CN116344661B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012209357A (en) * | 2011-03-29 | 2012-10-25 | Asahi Kasei Electronics Co Ltd | Quantum type infrared sensor |
| CN106684200A (en) * | 2016-12-30 | 2017-05-17 | 云南师范大学 | Fabrication method of three-color infrared detector |
| CN106711249A (en) * | 2016-12-30 | 2017-05-24 | 云南师范大学 | Preparation method of two-color infrared detector based on indium-arsenic-antimony (InAsSb) material |
| CN106784117A (en) * | 2016-12-30 | 2017-05-31 | 云南师范大学 | A kind of preparation method of the wave band Infrared Detectors of shortwave/medium wave/long wave three |
| CN114664960A (en) * | 2022-05-26 | 2022-06-24 | 苏州焜原光电有限公司 | Second-class superlattice infrared detector without stress layer and preparation method |
| CN115513328A (en) * | 2022-10-27 | 2022-12-23 | 中科爱毕赛思(常州)光电科技有限公司 | High-temperature infrared detector with improved potential barrier and manufacturing method thereof |
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