CN112331738A - PBn type InAsSb infrared detector material - Google Patents
PBn type InAsSb infrared detector material Download PDFInfo
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- CN112331738A CN112331738A CN202011065080.0A CN202011065080A CN112331738A CN 112331738 A CN112331738 A CN 112331738A CN 202011065080 A CN202011065080 A CN 202011065080A CN 112331738 A CN112331738 A CN 112331738A
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- 239000000463 material Substances 0.000 title claims abstract description 69
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 238000010521 absorption reaction Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims description 21
- 229910005542 GaSb Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 3
- 238000005057 refrigeration Methods 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XSKUQABTDMBZCN-UHFFFAOYSA-N [Sb].[As].[In] Chemical compound [Sb].[As].[In] XSKUQABTDMBZCN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
The invention relates to a PBn type InAsSb infrared detector material, belonging to the technical field of photoelectron materials and devices. The structure of the material is sequentially a top electrode contact layer with the thickness of 100 nm-300 nm, a barrier layer with the thickness of 100 nm-200 nm, an absorption layer with the thickness of 2000 nm-3000 nm, a bottom electrode contact layer with the thickness of 200 nm-500 nm, a buffer layer with the thickness of 50 nm-200 nm and a substrate from top to bottom. The infrared detector made of the material has small dark current, the background temperature limit of the detector is improved, and the requirement of an infrared detector assembly on refrigeration is reduced, so that the overall size, weight, power consumption and cost are reduced, the reliability of a system can be improved, and the service life of the system is prolonged.
Description
Technical Field
The invention relates to a PBn type InAsSb infrared detector material, belonging to the technical field of photoelectron materials and devices.
Background
Infrared detectors are an important component of infrared detection and thermal imaging systems. At present, the infrared detector is divided into low temperature operation, high temperature operation and room temperature operation according to the working temperature. High-performance medium-wave and long-wave infrared photon detectors such as mercury cadmium telluride, indium antimonide, quantum wells, second-class superlattices and the like need to work at low temperature to inhibit the influence of thermally-excited carriers, the thermal noise of the device is reduced, and the introduction of a low-temperature refrigeration system can cause the increase of the power consumption, the volume and the weight of an infrared system. The heat-sensitive infrared detector can not be refrigerated, but has low sensitivity and slow response speed, and cannot meet the requirement of high-performance detection.
The high working temperature infrared detector mainly comprises three types: indium-arsenic-antimony (InAsSb), mercury cadmium telluride (HgCdTe) and a second-class superlattice high-working-temperature infrared detector. The mercury cadmium telluride detector has high ultimate detection rate, but the stability of the device is poor and the price is high; the response wavelength of the second type of superlattice detector is easy to adjust, but the carrier mobility is anisotropic, the material growth is difficult to control, and the technical difficulty of the device passivation process is high. The Auger recombination current and the tunneling current of the InAs-Sb detector are small, and the material performance is stable.
The InAs-Sb high-working-temperature infrared detector comprises a pn junction, a heterojunction, a non-balanced structure and a barrier type, wherein the PBn type InAsSb infrared detector is a barrier type detector with an absorption layer made of an unintentionally doped InAsSb material, a contact layer made of a P type semiconductor material and a barrier layer made of a P type wide band gap semiconductor material. At present, the InAsSb infrared detector mainly comprises a pn junction and an nBn barrier type, the existence of a pn junction depletion region causes that the composite current generated by the device is overlarge, and the self-built electric field in the nBn barrier type is too small, so that the quantum efficiency of the device is low and the working voltage is high.
Disclosure of Invention
In order to solve the defects that the device generated-composite current is too large due to the existence of a pn junction depletion region, and the device quantum efficiency is low and the working voltage is high due to the fact that the self-built electric field in an nBn barrier type is too small, the invention aims to provide a PBn type InAsSb infrared detector material.
In order to achieve the purpose of the invention, the following technical scheme is provided.
A PBn type InAsSb infrared detector material is structurally characterized in that a top electrode contact layer, a barrier layer, an absorption layer, a bottom electrode contact layer, a buffer layer and a substrate are sequentially arranged from top to bottom.
The top electrode contact layer is made of p-type gallium antimonide (GaSb) single crystals doped with beryllium (Be); the doping concentration of Be is 5 x 1017cm-3～1×1018cm-3(ii) a The thickness of the top electrode contact layer is 100 nm-300 nm.
The barrier layer is made of p-type AlAs doped with beryllium (Be)0.08Sb0.92Single crystal with a doping concentration of Be of 5X 1015cm-3～1×1016cm-3The forbidden band width of the barrier layer material is larger than that of the absorption layer, and the crystal lattice of the barrier layer material is matched with that of the absorption layer material; the thickness of the barrier layer is 100 nm-200 nm.
The material of the absorption layer is unintentionally doped InAs0.91Sb0.09The thickness of the absorption layer is 2000 nm-3000 nm.
The bottom electrode contact layer is made of n-type InAs0.91Sb0.09Single crystal and doped with silicon (Si) having a doping concentration of 1017cm-3～1018cm-3(ii) a The thickness of the bottom electrode contact layer is 200 nm-500 nm.
The buffer layer is made of an unintentionally doped GaSb material; the thickness of the buffer layer is 50 nm-200 nm.
The substrate material is an n-type GaSb material doped with tellurium (Te), and the doping concentration of Te is 1 multiplied by 1017cm-3～5×1017cm-3。
The invention relates to a preparation method of a PBn type InAsSb infrared detector material, which comprises the following steps:
(1) growing a buffer layer on a substrate;
(2) growing a bottom electrode contact layer on the buffer layer;
(3) growing an absorption layer on the bottom electrode contact layer;
(4) growing a barrier layer on the absorption layer;
(5) and growing a top electrode contact layer on the barrier layer to prepare the PBn type InAsSb infrared detector material.
Advantageous effects
1. The invention provides a PBn type InAsSb infrared detector material, which utilizes the characteristic that the energy band difference of a heterojunction material mainly falls in a conduction band and uses AlAs0.08Sb0.92Conduction band barriers formed by the layers prevent conduction of majority carriers, and minority carriers in the absorption layers pass through the barriers through diffusion to form current response signals; the barrier layer has a large forbidden band width, and the generation-recombination current of the barrier layer is basically negligible, so that the generation-recombination current and the band-to-band tunneling current of a depletion region do not exist.
2. The invention provides a PBn type InAsSb infrared detector material, which adopts AlAs0.08Sb0.92As a barrier layer, the generation of dark current is suppressed and AlAs is used0.08Sb0.92Is a wide band gap material with a band gap larger than lattice matched InAs0.91Sb0.09Therefore, the infrared detector hardly absorbs the detected medium wave infrared, and is beneficial to improving the quantum efficiency of the infrared detector.
3. The invention provides a PBn type InAsSb infrared detector material, wherein a top electrode contact layer of the material can form good ohmic contact and good carrier transmission effect with a metal electrode, and the top electrode contact layer can form good ohmic contact and collect photon-generated carriers (holes).
4. The invention provides a PBn type InAsSb infrared detector material, wherein a barrier layer of the material can effectively inhibit the increase of generation-composite current, diffusion current and tunneling current caused by the rise of working temperature, has a self-passivation function, and is suitable for detecting mid-band infrared under the condition of high working temperature.
Drawings
FIG. 1 is a schematic structural diagram of a PBn type InAsSb infrared detector material of the invention.
Fig. 2 is a schematic structural diagram of the PBn-type InAsSb infrared detector manufactured in embodiment 1.
FIG. 3 shows the J-V test results of the PBn-type InAsSb infrared detector manufactured in example 1 at different working temperatures.
Wherein, 1-top electrode contact layer, 2-barrier layer, 3-absorption layer, 4-bottom electrode contact layer, 5-buffer layer, 6-substrate, 7-electrode, 8-passivation layer
Detailed Description
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Example 1
A PBn type InAsSb infrared detector material is shown in figure 1, and the structure of the infrared detector material sequentially comprises a top electrode contact layer 1, a barrier layer 2, an absorption layer 3, a bottom electrode contact layer 4, a buffer layer 5 and a substrate 6 from top to bottom.
The top electrode contact layer 1 is made of p-type gallium antimonide (GaSb) single crystal doped with beryllium (Be); the doping concentration of Be is 1 × 1018cm-3(ii) a The thickness of the top electrode contact layer 1 is 300 nm.
The barrier layer 2 is made of Be-doped p-type AlAs0.08Sb0.92Single crystal with a doping concentration of Be of 1X 1016cm-3The forbidden bandwidth of the material of the barrier layer 2 is larger than that of the absorption layer 3, and the crystal lattice of the material of the absorption layer 3 is matched with that of the material of the absorption layer; the barrier layer 2 has a thickness of 120 nm.
The material of the absorption layer 3 is unintentionally doped InAs0.91Sb0.09Material, the thickness of the absorption layer 3 is 2500 nm.
The bottom electrode contact layer 4 is made of Si-doped n-type InAs0.91Sb0.09Single crystal; the doping concentration of Si is 1X 1018cm-3(ii) a The thickness of the bottom electrode contact layer 4 is 500 nm.
The buffer layer 5 is made of unintentionally doped GaSb single crystal; the buffer layer 5 has a thickness of 86 nm.
The substrate 6 is made of n-type GaSb single crystal doped with Te, and the doping concentration of Te is 1 multiplied by 1017cm-3(ii) a The thickness of the substrate 6 is 500 μm.
The preparation method of the PBn type InAsSb infrared detector material comprises the following steps:
(1) growing a GaSb buffer layer 5 on a GaSb (crystal orientation 100) substrate 6;
(2) growing n-type InAs on the GaSb buffer layer 50.91Sb0.09The material is used as a bottom electrode contact layer 4;
(3) growth of unintentionally doped InAs on bottom electrode contact layer 40.91Sb0.09An absorption layer 3;
(4) in InAs0.91Sb0.09Growing p-type AlAs on the absorption layer 30.08Sb0.92A material as the barrier layer 2;
(5) growing a p-type GaSb material on the barrier layer 2 to be used as a top electrode contact layer 1, and preparing the PBn-type InAsSb detector material.
Example 2
A PBn type InAsSb infrared detector material is shown in figure 1, and the structure of the infrared detector material sequentially comprises a top electrode contact layer 1, a barrier layer 2, an absorption layer 3, a bottom electrode contact layer 4, a buffer layer 5 and a substrate 6 from top to bottom.
The top electrode contact layer 1 is made of a Be-doped p-type GaSb single crystal; the doping concentration of Be is 5 x 1017cm-3(ii) a The thickness of the top electrode contact layer 1 is 300 nm.
The barrier layer 2 is made of Be-doped p-type AlAs0.08Sb0.92Single crystal with a doping concentration of Be of 1X 1016cm-3What is, what isThe forbidden bandwidth of the material of the barrier layer 2 is larger than that of the absorption layer 3, and the crystal lattice of the material of the absorption layer 3 is matched with that of the material of the absorption layer; the barrier layer 2 has a thickness of 150 nm.
The material of the absorption layer 3 is unintentionally doped InAs0.91Sb0.09A material; the thickness of the absorption layer 3 is 3000 nm.
The bottom electrode contact layer 4 is made of Si-doped n-type InAs0.91Sb0.09Single crystal; the doping concentration of Si is 5X 1017cm-3(ii) a The thickness of the bottom electrode contact layer 4 is 500 nm.
The buffer layer 5 is made of n-type GaSb single crystals matched with the material lattices of the absorption layer 3; the buffer layer 5 has a thickness of 86 nm.
The substrate 6 is made of n-type GaSb single crystal doped with Te, and the doping concentration of Te is 1 multiplied by 1017cm-3(ii) a The thickness of the substrate 6 is 500 μm.
The preparation method of the PBn type InAsSb infrared detector material comprises the following steps:
(1) growing a GaSb buffer layer 5 on a GaSb (crystal orientation 100) substrate 6;
(2) growing n-type InAs on the buffer layer 50.91Sb0.09The material is used as a bottom electrode contact layer 4;
(3) growth of unintentionally doped InAs on bottom electrode contact layer 40.91Sb0.09 An absorption layer 3;
(4) in InAs0.91Sb0.09Growing p-type AlAs on the absorption layer 30.08Sb0.92A material as the barrier layer 2;
(5) and growing a p-type GaSb material on the barrier layer 2 to be used as a top electrode contact layer 1, and preparing the PBn-type InAsSb detector material.
Example 3
Preparing an infrared detector A from the PBn type InAsSb infrared detector material prepared in the embodiment 1, and preparing an infrared detector B from the PBn type InAsSb infrared detector material prepared in the embodiment 2, wherein the preparation method of the infrared detector comprises the following steps:
by the method of combining dry etching and wet etching, the mesa is etched to the bottomElectrode contact layer 4 (mesa height of 3.2 μm can be obtained as in example 1) was prepared to obtain a sample; then sequentially depositing SiO with the thickness of 100nm at the temperature of 120 ℃ by adopting an inductive coupling enhanced chemical vapor deposition (ICPCVD) system2And Si 300nm thick3N4Passivating the sample by the composite film to form a passivation layer 8, wherein SiO is prepared2By SiH4、O2And Ar at gas flow rates of 6.0sccm, 7.5sccm, and 156sccm, respectively, to prepare Si3N4By SiH4、NH3Ar, the gas flow is respectively 6.0sccm, 8sccm and 278sccm, and the physical protection and the electrical insulation are carried out on the surface of the sample; etching a metal electrode window by adopting a reactive ion etching system (RIE), evaporating Cr with the thickness of 50nm and Au with the thickness of 250nm by using an electron beam, stripping and ultrasonically cleaning to finish the preparation of an electrode 7, forming ohmic contact, and preparing the infrared detector, wherein the structure of the infrared detector is shown in figure 2, the infrared detector comprises a substrate 6, a buffer layer 5, a bottom electrode contact layer 4, an absorption layer 3, a barrier layer 2 and a top electrode contact layer 1 which are sequentially arranged from bottom to top, and the surface of a step obtained by etching is SiO2And Si3N4And a metal electrode 7 is arranged on the passivation layer 8 of the composite film at the corresponding position of the top electrode contact layer 1 and the bottom electrode contact layer 4.
For the infrared detector A and the infrared detector B, an I-V test is respectively carried out by adopting a B1500A semiconductor analyzer of KEYSIGHT, the results are shown in table 1 and figure 3, figure 3 is a J-V curve of the device of the infrared detector A under dark background under different working temperatures, and the temperature interval is 10K-20K. Bias voltage of-400 mV at 77K temperature and dark current density of 2.42 × 10-6A/cm2(ii) a Bias voltage of-400 mV at 150K temperature, dark current density of 1.02 × 10-5A/cm2(ii) a Bias voltage of-400 mV at 200K temperature and dark current density of 5.2 × 10-4A/cm2。
Table 1 test results of the performance of the infrared detector manufactured in the example.
| Infrared detector | Dark current density/(A/cm)2) | Test temperature/K |
| A | 1.02×10-5 | 150 |
| B | 2.93×10-5 | 150 |
As can be seen from the results in table 1 and fig. 3, the dark current of the infrared detector is low, the background temperature limit of the detector is increased, and the requirement of the infrared detector assembly on refrigeration is reduced, so that the overall size, weight, power consumption and cost are reduced, the reliability of the system can be improved, and the service life of the system is prolonged.
Claims (3)
1. A PBn type InAsSb infrared detector material is characterized in that: the infrared detector material is structurally characterized in that a top electrode contact layer (1), a barrier layer (2), an absorption layer (3), a bottom electrode contact layer (4), a buffer layer (5) and a substrate (6) are sequentially arranged from top to bottom;
wherein the thickness of the top electrode contact layer (1) is 100 nm-300 nm;
the thickness of the barrier layer (2) is 100 nm-200 nm;
the thickness of the absorption layer (3) is 2000 nm-3000 nm;
the thickness of the bottom electrode contact layer (4) is 200 nm-500 nm;
the thickness of the buffer layer (5) is 50 nm-200 nm.
2. According to claim1 the PBn type InAsSb infrared detector material is characterized in that: the top electrode contact layer (1) is made of a Be-doped p-type GaSb single crystal; the doping concentration of Be is 5 x 1017cm-3～1×1018cm-3；
The barrier layer (2) is made of Be-doped p-type AlAs0.08Sb0.92Single crystal with a doping concentration of Be of 5X 1015cm-3～1×1016cm-3；
The material of the absorption layer (3) is unintentionally doped InAs0.91Sb0.09A material;
the bottom electrode contact layer (4) is made of n-type InAs0.91Sb0.09Single crystal and doped with Si with a doping concentration of 1017cm-3～1018cm-3；
The buffer layer (5) is made of an unintentionally doped GaSb material;
the substrate (6) is made of n-type GaSb material doped with Te, and the doping concentration of the Te is 1 multiplied by 1017cm-3～5×1017cm-3。
3. A method for preparing the PBn-type InAsSb infrared detector material as claimed in claim 1 or 2, wherein:
(1) growing a buffer layer (5) on a substrate (6);
(2) growing a bottom electrode contact layer (4) on the buffer layer (5);
(3) growing an absorption layer (3) on the bottom electrode contact layer (4);
(4) growing a barrier layer (2) on the absorption layer (3);
(5) and (3) growing a top electrode contact layer (1) on the barrier layer (2) to prepare the PBn type InAsSb infrared detector material.
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| CN116722063A (en) * | 2023-08-10 | 2023-09-08 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with planar structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116722063A (en) * | 2023-08-10 | 2023-09-08 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with planar structure and preparation method thereof |
| CN116722063B (en) * | 2023-08-10 | 2023-10-31 | 太原国科半导体光电研究院有限公司 | Superlattice infrared detector with planar structure and preparation method thereof |
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