CN111477701A - Planar double-microcavity thermionic photodetector and preparation method thereof - Google Patents

Planar double-microcavity thermionic photodetector and preparation method thereof Download PDF

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CN111477701A
CN111477701A CN202010328770.4A CN202010328770A CN111477701A CN 111477701 A CN111477701 A CN 111477701A CN 202010328770 A CN202010328770 A CN 202010328770A CN 111477701 A CN111477701 A CN 111477701A
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metal
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CN111477701B (en
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邵伟佳
张程
李孝峰
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Suzhou University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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Abstract

The invention discloses a planar double-microcavity thermionic photodetector and a preparation method thereof, wherein the planar double-microcavity thermionic photodetector comprises a substrate, a first metal layer, a first semiconductor dielectric layer, a second metal layer, a second semiconductor intermediate layer and a third metal layer which are sequentially arranged from bottom to top; the thicknesses of the second metal layer and the third metal layer are the same, and the materials and the structures of the second metal layer and the third metal layer are the same; the film thickness of the first semiconductor medium layer is the same as that of the second semiconductor medium layer, and the materials and the structures of the second semiconductor medium layer and the second semiconductor medium layer are the same. The method has the advantages of high light responsivity, reduced thickness of the metal layer, improved thermal electron transport efficiency, no loss of optical absorption, simple structure, low cost and convenience for large-scale preparation.

Description

Planar double-microcavity thermionic photodetector and preparation method thereof
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a planar double-microcavity thermionic photodetector and a preparation method thereof.
Background
A thermionic photodetector is a type of sub-forbidden band photodetector. Generally, a semiconductor photodetector collects electron-hole pairs generated by electron transition in a semiconductor using a PN junction, and a thermionic photodetector collects thermionic electrons in a thermodynamically nonequilibrium state in a metal using a metal-schottky barrier. The thermal electron optical detector is used as a sub-forbidden band optical detector, the working waveband can extend from an ultraviolet waveband to a near-infrared waveband, and the thermal electron optical detector also has the advantages of short response time, capability of operating at room temperature and the like. Structurally, thermionic photodetectors can be classified into two types, metal-dielectric-metal and metal-semiconductor. The performance of a thermionic photodetector is generally characterized by responsivity, i.e., the current output per incident optical power. In order to improve the responsivity of the thermionic photodetector, a metal micro-nano configuration can be adopted to enhance the absorption of optical signals, but the metal micro-nano configuration has the defects of high cost, complex operation, difficulty in large-area preparation and the like. The plane type thermionic photodetector has the advantages of low cost, simplicity in operation, easiness in large-area preparation and the like.
In a thermionic photodetector with a metal-semiconductor structure, the metal forms a schottky contact with the semiconductor. The metal is used as an absorption material of an incident light signal and an electrode of the detector, and the metal electrode is evaporated on the semiconductor to form ohmic contact with the semiconductor. The operation of the metal-semiconductor structure based thermionic photodetector is accompanied by four microscopic processes of thermionic electrons: (1) when an incident light signal irradiates the detector, obvious optical absorption is caused in the metal area; (2) electrons near the Fermi level in the metal are subjected to energy transition of incident photons to a high level to generate hot electrons in a non-thermodynamic equilibrium state; (3) the generated hot electrons are freely diffused and transported to the metal-semiconductor interface in the metal, and meanwhile, the hot electrons undergo thermal relaxation to be near a Fermi level due to the interaction of electrons-electrons and electrons-phonons in the transport process; (4) hot electrons that successfully reach the metal-semiconductor interface without thermalization cross the metal-semiconductor schottky barrier into the semiconductor and collect hot electrons at the electrode that forms an ohmic contact with the semiconductor to form an output current signal. Generally, the performance of the planar metal-semiconductor structure thermionic photodetector can be improved from two aspects, namely, the optical absorption of the device is enhanced, and the collection efficiency of the thermionic electrons in the device is improved. Through years of development, the planar metal-semiconductor structure thermionic photo detector can achieve perfect optical absorption. But the responsivity is not high because the collection efficiency of the thermions within the device is always low.
In the plane type metal-semiconductor structure hot electron photo detector, the reason that the hot electron collection efficiency is not high is two reasons: firstly, a part of hot electrons are thermalized due to the interaction of electrons-electrons and electrons-phonons before reaching the metal-semiconductor Schottky barrier, and finally lose energy and cannot cross the barrier, but when the thickness of metal is reduced to reduce the thermalization of hot electrons, the efficiency of hot electron transportation is enhanced, and meanwhile, the optical absorption is reduced; secondly, a considerable part of hot electrons cannot reach the metal-semiconductor Schottky barrier because of the free diffusion to reach the boundary of the metal and the environment, so that the hot electrons cannot be collected.
Disclosure of Invention
The invention aims to provide a planar double-microcavity thermionic photodetector and a preparation method thereof, which have the advantages of high photoresponse, reduced thickness of a metal layer, improved thermionic transport efficiency, no loss of optical absorption, simple structure, low price and convenience for large-scale preparation.
In order to solve the technical problem, the invention provides a planar double-microcavity thermionic photodetector, which comprises a substrate, a first metal layer, a first semiconductor dielectric layer, a second metal layer, a second semiconductor intermediate layer and a third metal layer, wherein the substrate, the first metal layer, the first semiconductor dielectric layer, the second metal layer, the second semiconductor intermediate layer and the third metal layer are sequentially arranged from bottom to top;
the thicknesses of the second metal layer and the third metal layer are the same, and the materials and the structures of the second metal layer and the third metal layer are the same;
the film thickness of the first semiconductor medium layer is the same as that of the second semiconductor medium layer, and the materials and the structures of the second semiconductor medium layer and the second semiconductor medium layer are the same;
the first metal layer is in contact with the first semiconductor medium layer to form a first Schottky junction, the first semiconductor medium layer is in contact with the second metal layer to form a second Schottky junction, the second metal layer is in contact with the second semiconductor medium layer to form a third Schottky junction, and the second semiconductor medium layer is in contact with the third metal layer to form a fourth Schottky junction.
Preferably, the first metal layer is a gold thin film, a silver thin film, a copper thin film, or an aluminum thin film.
Preferably, the first semiconductor medium layer is a zinc oxide film, a titanium dioxide film or a gallium arsenide film.
Preferably, the substrate is a glass sheet, a plastic sheet, a ceramic sheet, a metal sheet or a wood sheet.
Preferably, the thickness of the second metal layer is 10 to 20 nm.
Preferably, the thickness of the first semiconductor medium layer is 50-200 nm.
Preferably, the thickness of the first metal layer is 100nm to 250 nm.
The invention discloses a preparation method of a planar double-microcavity thermionic photodetector, which comprises the following steps:
s1, cleaning the surface of the substrate to remove impurities on the surface of the substrate;
s2, depositing a first metal layer on the substrate as an optical barrier layer by using an electron beam evaporation method;
s3, plating a first semiconductor intermediate layer on the first metal layer by using a magnetic sputtering method;
s4, depositing a second metal layer on the first semiconductor intermediate layer by using an electron beam evaporation method;
s5, plating a second semiconductor intermediate layer on the second metal layer by using a magnetic sputtering method, wherein the thickness, the material and the structure of the second semiconductor intermediate layer are consistent with those of the first semiconductor intermediate layer;
and S6, depositing a third metal layer on the second semiconductor intermediate layer by using an electron beam evaporation method, wherein the thickness, the material and the structure of the third metal layer are consistent with those of the second metal layer.
Preferably, when the substrate is a quartz glass plate in S1, the upper surface of the quartz glass plate is polished.
The invention has the beneficial effects that:
1. the planar metal-semiconductor structure double-microcavity thermionic photodetector has very high responsivity which is 2-3 times higher than that of international products.
2. The planar metal-semiconductor structure double-microcavity thermionic photodetector has the advantages of simple design, novel structure, simple process and low cost, is not limited to a certain material, and widens the application range of the thermionic photodetector.
3. The planar metal-semiconductor structure double-microcavity thermionic photodetector can change the working wavelength range by adjusting the geometric parameters (the thickness of a semiconductor dielectric layer) of the structure, and has good adaptability.
4. On the premise of reducing the thickness of the metal layer, double microcavities are constructed in the device, so that the thermal electron transport efficiency is improved, and optical absorption is not lost;
5. when a double microcavity is constructed in the thermionic photodetector, four metal-semiconductor schottky barriers are formed so that more hot electrons are collected.
Drawings
FIG. 1 is a schematic flow chart of the preparation method of the present invention;
FIG. 2 is a schematic structural view of the present invention;
FIG. 3 is a diagram illustrating an optical responsivity of a photodetector according to an embodiment of the invention.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Referring to fig. 1-2, the invention discloses a planar dual-microcavity thermionic photodetector, which comprises a substrate, a first metal layer, a first semiconductor dielectric layer, a second metal layer, a second semiconductor intermediate layer and a third metal layer, wherein the substrate, the first metal layer, the first semiconductor dielectric layer, the second metal layer, the second semiconductor intermediate layer and the third metal layer are sequentially arranged from bottom to top;
the thicknesses of the second metal layer and the third metal layer are the same, and the materials and the structures of the second metal layer and the third metal layer are the same;
the film thickness of the first semiconductor medium layer is the same as that of the second semiconductor medium layer, and the materials and the structures of the second semiconductor medium layer and the second semiconductor medium layer are the same;
the first metal layer is in contact with the first semiconductor medium layer to form a first Schottky junction, the first semiconductor medium layer is in contact with the second metal layer to form a second Schottky junction, the second metal layer is in contact with the second semiconductor medium layer to form a third Schottky junction, and the second semiconductor medium layer is in contact with the third metal layer to form a fourth Schottky junction.
The first metal layer is a gold film, a silver film, a copper film or an aluminum film.
The first semiconductor medium layer is a zinc oxide film, a titanium dioxide film or a gallium arsenide film.
The substrate is a glass sheet, a plastic sheet, a ceramic sheet, a metal sheet or a wood sheet.
The thickness of the second metal layer is 10-20 nm.
The thickness of the first semiconductor medium layer is 50-200 nm.
The thickness of the first metal layer is 100-250 nm.
The invention discloses a preparation method of a planar double-microcavity thermionic photodetector, which comprises the following steps:
s1, cleaning the surface of the substrate to remove impurities on the surface of the substrate;
s2, depositing a first metal layer on the substrate as an optical barrier layer by using an electron beam evaporation method;
s3, plating a first semiconductor intermediate layer on the first metal layer by using a magnetic sputtering method;
s4, depositing a second metal layer on the first semiconductor intermediate layer by using an electron beam evaporation method;
s5, plating a second semiconductor intermediate layer on the second metal layer by using a magnetic sputtering method, wherein the thickness, the material and the structure of the second semiconductor intermediate layer are consistent with those of the first semiconductor intermediate layer;
and S6, depositing a third metal layer on the second semiconductor intermediate layer by using an electron beam evaporation method, wherein the thickness, the material and the structure of the third metal layer are consistent with those of the second metal layer.
When the substrate in S1 is a quartz glass plate, the upper surface of the quartz glass plate is polished.
The working principle of the invention is as follows: when an incident optical signal impinges on the detector, significant optical absorption occurs within the metallic region. Optical absorption causes the electron in the metal to transition to a higher energy level. Electrons (hot electrons) at high energy levels are in a thermodynamically nonequilibrium state, thermalized in metals due to electron-electron and electron-phonon collisions, with free diffusion transport to the metal-semiconductor interface. Hot electrons arriving at the metal-dielectric interface have a certain probability of crossing the metal-semiconductor schottky barrier into the semiconductor to be collected. When the double-microcavity design is adopted, the thickness of the metal layer can obviously enhance the transport efficiency of hot electrons without reducing optical absorption; meanwhile, the double microcavity design means that four metal-semiconductor Schottky junctions exist, so that the hot electron collection efficiency can be improved. Thus, the double microcavity design can significantly improve the responsivity and internal quantum efficiency of the thermionic photodetector.
Example one
The method comprises the following steps of preparing a planar metal-semiconductor structure double-microcavity thermionic photodetector by using quartz glass as a substrate, a gold film as an optical barrier layer and a titanium dioxide film as a semiconductor medium layer:
(1) polishing a quartz glass sheet, placing the polished quartz glass sheet in deionized water, and ultrasonically cleaning the polished quartz glass sheet to remove impurities on the surface;
(2) plating a gold film with the thickness of 200nm on the cleaned glass sheet by an electron beam evaporation method;
(3) depositing a titanium dioxide film with the thickness of 100nm by a magnetron sputtering method;
(4) plating a gold film with the thickness of 10nm on the titanium dioxide film by an electron beam evaporation method;
(5) depositing a titanium dioxide film with the thickness of 100nm by a magnetron sputtering method;
(6) plating a gold film with the thickness of 10nm on a titanium dioxide film by an electron beam evaporation method;
the metal used in this example is a gold thin film, and two gold-titanium dioxide-gold optical microcavities are present in the device. As long as Fabry-Perot resonance is generated in the double microcavity, optical absorption can be realized in the gold film. Any metal film is therefore possible. The use of two gold films of only 10nm thickness reduces the transport losses of the thermionic electrons in the metal. The double-microcavity thermionic photodetector has four Schottky junctions, and can raise the efficiency of collecting thermionic electrons. The double microcavity design can improve the responsivity of the planar metal-semiconductor thermionic photodetector. Fig. 3 is a schematic diagram of the optical responsivity of the photodetector in this embodiment. As can be seen from fig. 3, the photo detector has a high responsivity.
Example two
In the embodiment, a plane type metal-semiconductor structure double-microcavity thermionic photodetector is prepared by using monocrystalline silicon as a substrate, a silver film as an optical barrier layer and a zinc oxide film as a semiconductor medium layer according to the following steps:
(1) polishing a monocrystalline silicon wafer, placing the polished monocrystalline silicon wafer in deionized water, and ultrasonically cleaning the polished monocrystalline silicon wafer to remove impurities on the surface;
(2) plating a silver film with the thickness of 150nm on the cleaned glass sheet by an electron beam evaporation method;
(3) depositing a zinc oxide film with the thickness of 80nm by a magnetron sputtering method;
(4) plating a silver film with the thickness of 10nm on the zinc oxide film by an electron beam evaporation method;
(5) depositing a zinc oxide film with the thickness of 80nm by a magnetron sputtering method;
(6) a silver film with a thickness of 10nm was coated on the zinc oxide film by electron beam evaporation.
EXAMPLE III
In the embodiment, a plane type metal-semiconductor structure double-microcavity thermionic photodetector is prepared by taking quartz glass as a substrate, a copper film as an optical barrier layer and a titanium dioxide film as a semiconductor medium layer according to the following steps:
(1) polishing a quartz glass sheet, placing the polished quartz glass sheet in deionized water, and ultrasonically cleaning the polished quartz glass sheet to remove impurities on the surface;
(2) plating a copper film with the thickness of 100nm on the cleaned glass sheet by an electron beam evaporation method;
(3) depositing a titanium dioxide film with the thickness of 150nm by a magnetron sputtering method;
(4) plating a copper film with the thickness of 8nm on the titanium dioxide film by an electron beam evaporation method;
(5) depositing a titanium dioxide film with the thickness of 150nm by a magnetron sputtering method;
(6) a copper film with a thickness of 8nm was deposited on the titanium dioxide film by electron beam evaporation.
Compared with the prior art, the invention has the beneficial effects that:
(1) the plane type metal-semiconductor structure double microcavity thermionic photodetector has very high responsivity (generally 2-3 times higher than that of international products);
(2) the planar metal-semiconductor structure double-microcavity thermionic photodetector has the advantages of simple design, novel structure, simple process, low price, no limitation to a certain material, and expanded application range of the thermionic photodetector;
(3) the planar metal-semiconductor structure double-microcavity thermionic photodetector can change the working wavelength range by adjusting the geometric parameters (the thickness of a semiconductor dielectric layer) of the structure, and has good adaptability.
(4) On the premise of reducing the thickness of the metal layer, double microcavities are constructed in the device, so that the thermal electron transport efficiency is improved, and optical absorption is not lost;
(5) when a double microcavity is constructed in the thermionic photodetector, four metal-semiconductor schottky barriers are formed so that more hot electrons are collected.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. A planar double-microcavity thermionic photodetector is characterized by comprising a substrate, a first metal layer, a first semiconductor dielectric layer, a second metal layer, a second semiconductor intermediate layer and a third metal layer which are sequentially arranged from bottom to top;
the thicknesses of the second metal layer and the third metal layer are the same, and the materials and the structures of the second metal layer and the third metal layer are the same;
the film thickness of the first semiconductor medium layer is the same as that of the second semiconductor medium layer, and the materials and the structures of the second semiconductor medium layer and the second semiconductor medium layer are the same;
the first metal layer is in contact with the first semiconductor medium layer to form a first Schottky junction, the first semiconductor medium layer is in contact with the second metal layer to form a second Schottky junction, the second metal layer is in contact with the second semiconductor medium layer to form a third Schottky junction, and the second semiconductor medium layer is in contact with the third metal layer to form a fourth Schottky junction.
2. The planar dual-microcavity thermionic photodetector of claim 1, wherein the first metal layer is a gold film, a silver film, a copper film, or an aluminum film.
3. The planar dual-microcavity thermionic photodetector of claim 1, wherein the first semiconductor dielectric layer is a zinc oxide film, a titanium dioxide film, or a gallium arsenide film.
4. The planar dual microcavity thermionic photodetector of claim 1 wherein the substrate is a sheet of glass, plastic or metal.
5. The planar dual microcavity thermionic photodetector of claim 1 wherein the substrate is a ceramic sheet or a wood sheet.
6. The planar dual microcavity thermionic photodetector of claim 1 wherein the second metal layer has a thickness in the range of 10nm to 20 nm.
7. The planar dual-microcavity thermionic photodetector of claim 1, wherein the first dielectric layer has a thickness in the range of 50nm to 200 nm.
8. The planar dual microcavity thermionic photodetector of claim 1, wherein the first metal layer has a thickness in the range of 100nm to 250 nm.
9. A method of fabricating a planar dual microcavity thermionic photodetector as claimed in any one of claims 1 to 8, comprising the steps of:
s1, cleaning the surface of the substrate to remove impurities on the surface of the substrate;
s2, depositing a first metal layer on the substrate as an optical barrier layer by using an electron beam evaporation method;
s3, plating a first semiconductor intermediate layer on the first metal layer by using a magnetic sputtering method;
s4, depositing a second metal layer on the first semiconductor intermediate layer by using an electron beam evaporation method;
s5, plating a second semiconductor intermediate layer on the second metal layer by using a magnetic sputtering method, wherein the thickness, the material and the structure of the second semiconductor intermediate layer are consistent with those of the first semiconductor intermediate layer;
and S6, depositing a third metal layer on the second semiconductor intermediate layer by using an electron beam evaporation method, wherein the thickness, the material and the structure of the third metal layer are consistent with those of the second metal layer.
10. The method of claim 9, wherein the planar dual-microcavity thermionic photodetector comprises a first substrate and a second substrate,
when the substrate is a quartz glass plate in S1, a polishing process is performed on an upper surface of the quartz glass plate to obtain a flat surface.
CN202010328770.4A 2020-04-23 2020-04-23 Planar double-microcavity hot electron photodetector and preparation method thereof Active CN111477701B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112485850A (en) * 2020-12-21 2021-03-12 北京大学 Broadband absorber with double-loss cavity structure and preparation method thereof
CN115425144A (en) * 2022-07-26 2022-12-02 安庆师范大学 Preparation method of hot electron transistor, hot electron transistor prepared by using preparation method, application and application method

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CN110391314A (en) * 2019-06-28 2019-10-29 华南农业大学 A kind of narrowband photodetector and preparation method thereof
CN110767768A (en) * 2019-10-28 2020-02-07 太原理工大学 Organic/metal Schottky junction stack hot electron photoelectric detector and manufacturing method thereof

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112485850A (en) * 2020-12-21 2021-03-12 北京大学 Broadband absorber with double-loss cavity structure and preparation method thereof
CN115425144A (en) * 2022-07-26 2022-12-02 安庆师范大学 Preparation method of hot electron transistor, hot electron transistor prepared by using preparation method, application and application method
CN115425144B (en) * 2022-07-26 2024-05-03 安庆师范大学 Preparation method of thermionic transistor, thermionic transistor prepared by using preparation method, application and application method

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