CN111477700B - Hot electron photodetector based on perfect absorption metamaterial and preparation method thereof - Google Patents
Hot electron photodetector based on perfect absorption metamaterial and preparation method thereof Download PDFInfo
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- CN111477700B CN111477700B CN202010327903.6A CN202010327903A CN111477700B CN 111477700 B CN111477700 B CN 111477700B CN 202010327903 A CN202010327903 A CN 202010327903A CN 111477700 B CN111477700 B CN 111477700B
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- 239000002784 hot electron Substances 0.000 title claims description 33
- 238000002360 preparation method Methods 0.000 title abstract description 8
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- 238000005566 electron beam evaporation Methods 0.000 claims description 12
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
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- 239000004332 silver Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
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- 239000010949 copper Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000000609 electron-beam lithography Methods 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a thermoelectron photodetector based on perfect absorption metamaterial and a preparation method thereof, comprising a substrate, wherein a first metal film, an electrode intermediate layer, a second metal film, a metamaterial dielectric layer and a periodic dielectric lattice are sequentially arranged on the substrate from bottom to top; the first metal film and the second metal film are made of the same material; the first metal film is used as a bottom electrode, and the second metal film is used as a top electrode; wherein the first metal film is an optical barrier layer and an electrical transport layer. The optical absorption is good, the electrical transport efficiency is high, and the responsivity of the optical detector is good.
Description
Technical Field
The invention relates to the technical field of optical detectors, in particular to a thermal electron optical detector based on a perfect absorption metamaterial and a preparation method thereof.
Background
The working principle of the hot electron photodetector is to collect electrons in thermodynamic non-equilibrium state, which are generated by light absorption, in metal by utilizing the principle of light internal emission. The hot electron photodetector is used as a sub-forbidden band optical detector, the working wave band can extend from an ultraviolet band to a near infrared band, and the detector has the advantages of quick response time, room temperature operation and the like. Structurally, hot electron photodetectors are of both metal-semiconductor and metal-dielectric-metal types. The performance of a hot electron photodetector is generally characterized by responsivity, i.e., current output per unit incident light power. In order to improve the responsivity of the hot electron photodetector, a metal micro-nano structure can be utilized to enhance the absorption of incident optical signals. But the metal micro-nano structure may reduce the transport efficiency of hot electrons.
In a metal-dielectric-metal structured thermo-electron photodetector, two layers of metal are used as both the absorbing material for the incident optical signal and as the two electrodes of the detector for outputting the electrical signal. The working principle of the thermoelectron photodetector based on the metal-medium-metal structure can be divided into four steps: (1) When an incident light signal is irradiated on the detector, obvious optical absorption is caused in two metal areas, but the two optical absorption are not equal and optical net absorption exists; (2) Electrons in the metal near the fermi level get the energy transition of the incident photon to a high energy level to generate hot electrons in a non-thermodynamic equilibrium state; (3) The generated hot electrons are freely diffused and transported to a metal-medium interface in the metal; (4) The hot electrons that successfully reach the interface reach the counter electrode past the metal-dielectric barrier and are collected, and the net optical absorption causes the number of hot electrons collected by the two electrodes to be unequal, thus forming an output current signal.
In general, the performance of a thermionic electron photodetector can be improved in two ways, namely, the optical absorption of the detector is improved, and the transport efficiency of thermions in metal is enhanced. For metal-dielectric-metal junction hot electron photodetectors, there is a conflict between optical absorption and electrical transport. In particular, the optical absorption of a thermoelectron photodetector based on a metal micro-nano configuration is stronger than that of a planar thermoelectron photodetector, but the transport efficiency of thermoelectrons is inferior to that of the planar thermoelectron photodetector.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a thermoelectron photodetector based on perfect absorption metamaterial and a preparation method thereof, wherein the thermoelectron photodetector has good optical absorption, high electrical transport efficiency and good responsivity.
In order to solve the technical problems, the invention provides a hot electron photodetector and a preparation method thereof, wherein the hot electron photodetector comprises a substrate, and a first metal film, an electrode intermediate layer, a second metal film, a metamaterial dielectric layer and a periodic dielectric lattice are sequentially arranged on the substrate from bottom to top; the first metal film and the second metal film are made of the same material; the first metal film is used as a bottom electrode, and the second metal film is used as a top electrode; wherein the first metal film is an optical barrier layer and an electrical transport layer.
Preferably, the first metal film is a gold film, a silver film, a copper film, or an aluminum film.
Preferably, the electrode intermediate layer is a zinc oxide film, an aluminum oxide film or a titanium dioxide film.
Preferably, the metamaterial dielectric layer is a silicon dioxide film, a zinc oxide film or a magnesium fluoride film.
Preferably, the periodic medium lattice is a silicon nitride lattice, a silicon carbide lattice or a silicon dioxide lattice.
Preferably, the period of the periodic medium lattice is not less than 250nm.
Preferably, the thickness of the first metal film is 100-500nm, and the thickness of the second metal film is 10-30nm.
Preferably, the thickness of the electrode interlayer is 5-10nm.
The invention discloses a manufacturing method of a thermoelectron photodetector based on perfect absorption metamaterial, which comprises the following steps:
s1, cleaning the surface of a substrate to remove impurities on the surface of the substrate;
s2, depositing a first metal film on a substrate by using an electron beam evaporation method, wherein the first metal film is used as a bottom electrode;
s3, growing an electrode intermediate layer on the first metal film by using an atomic layer deposition method;
s4, plating a second metal film on the electrode intermediate layer by using an electron beam evaporation method to serve as a top electrode;
s5, coating a film on the second metal layer by using a magnetron sputtering method to obtain a metamaterial dielectric layer;
s6, preparing a periodic medium lattice on the second metal layer by using an electron beam lithography method.
The invention has the beneficial effects that:
1. the perfect absorption metamaterial hot electron photodetector based on the medium micro-nano structure has very high responsivity (generally 2-3 times higher than international products).
2. The thermionic electric detector based on the perfect absorption metamaterial is simple in design, novel in structure, simple in process and low in cost, is not limited to a certain material, and expands the application range of the thermionic electric detector.
3. The invention can change the working wavelength range by adjusting the geometric parameters of the structure (the periodical medium particle lattice period and the metamaterial medium layer thickness), and has good adaptability.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of a method for fabricating a hot electron photodetector according to the first embodiment;
fig. 3 is a schematic diagram of the optical and electrical response of the photodetector in the first embodiment.
Description of the invention with reference numerals: 1. a substrate; 2. a first metal thin film; 3. an electrode interlayer; 4. a second metal thin film; 5. a metamaterial dielectric layer; 6. periodic medium lattice.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Referring to fig. 1, the invention discloses a perfect absorption metamaterial-based hot electron photodetector and a preparation method thereof, wherein the perfect absorption metamaterial-based hot electron photodetector comprises a substrate 1, and a first metal film 2, an electrode intermediate layer 3, a second metal film 4, a metamaterial dielectric layer 5 and a periodic dielectric lattice 6 are sequentially arranged on the substrate 1 from bottom to top; the first metal film 2 and the second metal film 4 are made of the same material; the first metal film 2 serves as a bottom electrode and the second metal film 4 serves as a top electrode. Wherein the first metal film 2 is an optical barrier layer and an electrical transport layer.
The working principle of the invention is as follows: when an incident optical signal is irradiated on the detector, strong electric dipole resonance is formed in the periodic dielectric lattice 6, and mirror charges are formed on the surface of the metal top electrode. The electric dipole resonance in the periodic dielectric lattice 6 and the mirror charge in the metal top electrode constitute a magnetic dipole that resonates with the magnetic field of the incident optical signal. The electric dipole and magnetic dipole resonance make the reflection of the incident light with a specific wavelength zero, and the transmission light is zero due to the blocking of the metal electrode, so that the perfect optical absorption is realized. Under the combined action of strong optical absorption of the perfect absorption metamaterial and electric transportation of the planar metal-medium-metal junction, the responsivity of the perfect absorption metamaterial planar metal-medium-metal junction hot electron photodetector is improved. Unlike typical perfect absorbing metamaterials, metals not only act as optical barriers, but also as electrical transport layers for hot electrons.
The first metal film 2 is a gold film, a silver film, a copper film, or an aluminum film. The electrode intermediate layer is a zinc oxide film, an aluminum oxide film or a titanium dioxide film. The metamaterial dielectric layer 5 is a silicon dioxide film, a zinc oxide film or a magnesium fluoride film, and the metamaterial dielectric layer 5 is generally made of common dielectric materials and needs to have certain mechanical strength to support the periodic dielectric lattice 6. The substrate 1 may be quartz glass or monocrystalline silicon.
The periodic medium lattice 6 is a silicon nitride lattice, a silicon carbide lattice or a silicon dioxide lattice. The period of the periodic medium lattice 6 is not less than 250nm.
The first metal thin film 2 (bottom electrode) needs to be thick, and the thickness of the first metal thin film 2 is 100-500nm as an optical blocking layer. The second metal film (top electrode) also serves as an optical barrier but also as a hot electron transport layer, and thus needs to be thin, the thickness of the second metal film 4 is 10-30nm.
The thickness of the electrode intermediate layer is 5-10nm.
The invention also discloses a preparation method of the thermoelectron photodetector based on the perfect absorption metamaterial, which comprises the following steps:
s1, cleaning the surface of a substrate to remove impurities on the surface of the substrate;
s2, depositing a first metal film on a substrate by using an electron beam evaporation method, wherein the first metal film is used as a bottom electrode;
s3, growing an electrode intermediate layer on the first metal film by using an atomic layer deposition method;
s4, plating a second metal film on the electrode intermediate layer by using an electron beam evaporation method to serve as a top electrode;
s5, coating a film on the second metal layer by using a magnetron sputtering method to obtain a metamaterial dielectric layer;
s6, preparing a periodic medium lattice on the second metal layer by using an electron beam lithography method.
Example 1
Referring to fig. 2, in this embodiment, quartz glass is used as a substrate, a gold film is used as two layers of electrodes, a zinc oxide film is used as an electrode intermediate layer, a silicon dioxide film is used as a metamaterial dielectric layer, and a mitsubishi silicon nitride particle lattice is used as a periodic dielectric particle array, so as to prepare a perfect absorption metamaterial hot electron photodetector based on a dielectric micro-nano structure according to the following steps:
(1) Polishing a quartz glass sheet, and placing the quartz glass sheet in deionized water for ultrasonic cleaning to remove impurities on the surface;
(2) Plating a gold film with the thickness of 200nm on the cleaned glass sheet by using an electron beam evaporation method to serve as a bottom electrode;
(3) Growing a 5nm zinc oxide film by an atomic layer deposition method to serve as an electrode intermediate layer;
(4) Plating a 20nm thick gold film on the zinc oxide film by using an electron beam evaporation method to serve as a top electrode;
(5) And a silicon dioxide film with the thickness of 50nm is used as a metamaterial dielectric layer on the top electrode of the gold film by a magnetron sputtering method.
(6) Preparing a square lattice of triangular prism silicon nitride particles with the side length of 100nm and the height of 100nm on a silicon dioxide film dielectric layer by using an electron beam lithography method, wherein the lattice period is 300nm.
Fig. 3 is a schematic diagram of the optical and electrical response of the photodetector in this embodiment. From fig. 3 (a), it can be seen that the optically perfect absorbing metamaterial has strong optical absorption around 680 nm. It can be seen from fig. 3 (b) that the responsiveness of the output can be modulated by the bias voltage.
The metal film used in this example is a gold film, but the reflection spectrum can be made to have valleys as long as there are a large number of free electrons in the electrode film. Any thin metal film is therefore possible. The optical absorption of the prepared sample of the embodiment occurs in two planar metal electrodes, and the excellent electrical transport in the planar metal-medium-metal junction is maintained while the strong optical absorption is realized, so that the responsivity of the optical detector is better than that of the metal-medium-metal junction hot electron detector with the same type of micro-nano structure.
Example two
In the embodiment, monocrystalline silicon is used as a substrate, a silver film is used as a bottom electrode, a silver film top electrode, an alumina film is used as an electrode intermediate layer, a zinc oxide film is used as a metamaterial dielectric layer, a cuboid silicon carbide particle hexagonal lattice is used as a periodic medium particle array, and a perfect absorption metamaterial hot electron photodetector based on a medium micro-nano structure is prepared according to the following steps:
(1) Polishing the monocrystalline silicon wafer and placing the monocrystalline silicon wafer in deionized water for ultrasonic cleaning to remove impurities on the surface;
(2) Plating a silver film with the thickness of 150nm on the cleaned glass sheet by using an electron beam evaporation method to serve as a bottom electrode;
(3) Growing an extremely thin 5nm aluminum oxide film by an atomic layer deposition method to serve as an electrode intermediate layer;
(4) Plating a silver film with the thickness of 15nm on the alumina film by using an electron beam evaporation method to serve as a top electrode;
(5) And a zinc oxide film with the thickness of 30nm is used as a metamaterial dielectric layer on the top electrode of the gold film by a magnetron sputtering method.
(6) And preparing a cuboid silicon carbide particle hexagonal lattice with the length and width of 100nm and the height of 30nm on the zinc oxide film dielectric layer by using an ultraviolet lithography method, wherein the lattice period is 300nm.
Example III
In the embodiment, quartz glass is used as a substrate, a copper film is used as two layers of electrodes, a titanium dioxide film is used as an electrode intermediate layer, a magnesium fluoride film is used as a metamaterial medium layer, a rectangular silicon dioxide particle tetragonal lattice is used as a periodic medium particle array, and a perfect absorption metamaterial hot electron photodetector based on a medium micro-nano structure is prepared according to the following steps:
(1) Polishing a quartz glass sheet, and placing the quartz glass sheet in deionized water for ultrasonic cleaning to remove impurities on the surface;
(2) Plating a copper film with the thickness of 100nm on the cleaned glass sheet by using an electron beam evaporation method to serve as a bottom electrode;
(3) Growing an 8nm titanium dioxide film by an atomic layer deposition method to serve as an electrode intermediate layer;
(4) Plating a copper film with the thickness of 20nm on the titanium dioxide film by using an electron beam evaporation method to serve as a top electrode;
(5) And (3) using a magnesium fluoride film with the thickness of 80nm on the top electrode of the gold film by a magnetron sputtering method as a metamaterial dielectric layer.
(6) Preparing rectangular silicon dioxide particle tetragonal lattice with length and width of 150nm and height of 50nm on the magnesium fluoride film dielectric layer by electron beam lithography, wherein the lattice period is 400nm.
The above-described embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.
Claims (8)
1. The thermoelectron photodetector based on the perfect absorption metamaterial is characterized by comprising a substrate, wherein a first metal film, an electrode intermediate layer, a second metal film, a metamaterial dielectric layer and a periodic dielectric lattice are sequentially arranged on the substrate from bottom to top; the first metal film and the second metal film are made of the same material; the first metal film is used as a bottom electrode, and the second metal film is used as a top electrode;
wherein the first metal film is an optical barrier layer and an electrical transport layer;
the metamaterial dielectric layer is a silicon dioxide film, a zinc oxide film or a magnesium fluoride film; the periodic medium lattice is a silicon nitride lattice, a silicon carbide lattice or a silicon dioxide lattice.
2. The perfect absorbing metamaterial based hot electron photodetector of claim 1, wherein the first metal film is a gold film, a silver film, a copper film, or an aluminum film.
3. The perfect absorbing metamaterial based hot electron photodetector according to claim 1, wherein the electrode intermediate layer is a zinc oxide film, an aluminum oxide film or a titanium dioxide film.
4. The perfect absorbing metamaterial based hot electron photodetector of claim 1, wherein the periodic medium lattice has a period of no less than 250nm.
5. The perfect absorbing metamaterial based hot electron photodetector of claim 1, wherein the thickness of the first metal film is 100-500nm.
6. The perfect absorbing metamaterial based hot electron photodetector according to claim 1, wherein the thickness of the second metal film is 10-30nm.
7. The perfect absorbing metamaterial based hot electron photodetector according to claim 1, wherein the thickness of the electrode interlayer is 5-10nm.
8. A method of manufacturing a perfect absorption metamaterial based hot electron photodetector as defined in any one of claims 1 to 7, comprising the steps of:
cleaning the surface of the substrate to remove impurities on the surface of the substrate;
depositing a first metal film on a substrate by using an electron beam evaporation method as a bottom electrode;
growing an electrode interlayer on the first metal film by using an atomic layer deposition method;
plating a second metal film on the electrode intermediate layer by using an electron beam evaporation method to serve as a top electrode;
coating a film on the second metal layer by using a magnetron sputtering method to obtain a metamaterial dielectric layer;
a periodic dielectric lattice is prepared on the metamaterial dielectric layer using electron beam lithography.
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