CN112485850A - Broadband absorber with double-loss cavity structure and preparation method thereof - Google Patents
Broadband absorber with double-loss cavity structure and preparation method thereof Download PDFInfo
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Abstract
The invention provides a broadband absorber with a double-loss cavity structure and a preparation method thereof. The broadband absorber with the double-loss cavity structure comprises a substrate, and a first metal layer, a first dielectric layer, a second metal layer and a second dielectric layer which are sequentially formed on the substrate, wherein the first metal layer and the second metal layer are made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, and the first dielectric layer and the second dielectric layer are made of transparent materials. The broadband absorber with the double-loss cavity structure has the advantages of high light absorptivity and insensitivity of a polarization angle, and can absorb light of a visible light-near infrared broadband.
Description
Technical Field
The invention relates to the technical field of electromagnetic absorption, in particular to a broadband absorber with a double-loss cavity structure and a preparation method of the broadband absorber with the double-loss cavity structure.
Background
A common absorber includes a substrate, and a metal/dielectric grating structure composed of a metal layer and a dielectric layer formed on the substrate. The metal/medium grating structure is a micro-nano one-dimensional grating structure and has the characteristics of low light absorption rate and polarization angle sensitivity, and the light-heat conversion efficiency of the absorber is low due to the polarization angle sensitivity. In addition, since the metal/dielectric grating structure only has a single surface plasmon absorption mechanism, the absorption waveband of the metal/dielectric grating structure is small, and the metal/dielectric grating structure cannot cover the whole visible light-near infrared broadband.
Disclosure of Invention
The invention mainly aims to provide a broadband absorber with a double-loss cavity structure, and aims to provide an absorber which has high light absorptivity, is insensitive to a polarization angle and can absorb light in a visible light-near infrared broadband.
In order to solve the technical problem, the broadband absorber with the double-loss cavity structure provided by the invention comprises a substrate, and a first metal layer, a first dielectric layer, a second metal layer and a second dielectric layer which are sequentially formed on the substrate, wherein the first metal layer and the second metal layer are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, and the first dielectric layer and the second dielectric layer are both made of transparent materials.
Further, the high-loss metal with the imaginary part of the dielectric constant within the range of 8-40 is platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium or nickel.
Further, the transparent material is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride, strontium fluoride, silicon nitride, boron nitride, aluminum nitride, gallium nitride, titanium nitride, aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, indium tin oxide, or silicon dioxide.
Further, the thickness range of the first metal layer is 150 nm-200 nm; and/or
The thickness range of the second metal layer is 5 nm-15 nm; and/or
The thickness range of the first dielectric layer is 80 nm-150 nm; and/or
The thickness range of the second dielectric layer is 100 nm-200 nm.
Further, the broadband absorber with the double-loss cavity structure is of a non-curved surface structure or a curved surface structure.
Further, the substrate is made of a polymer, a non-metal oxide, a metal fluoride, a metal nitride or a metal.
The invention also provides a preparation method of the broadband absorber with the double-loss cavity structure, which comprises the following steps:
providing a substrate; and
and sequentially plating a first metal layer, a first dielectric layer, a second metal layer and a second dielectric layer on the substrate, wherein the first metal layer and the second metal layer are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, and the first dielectric layer and the second dielectric layer are both made of transparent materials.
Further, the high-loss metal with the imaginary part of the dielectric constant within the range of 8-40 is platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium or nickel.
Further, the transparent material is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride, strontium fluoride, silicon nitride, boron nitride, aluminum nitride, gallium nitride, titanium nitride, aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, indium tin oxide, or silicon dioxide.
Further, the thickness range of the first metal layer is 150 nm-200 nm; and/or
The thickness range of the second metal layer is 5 nm-15 nm; and/or
The thickness range of the first dielectric layer is 80 nm-150 nm; and/or
The thickness range of the second dielectric layer is 100 nm-200 nm; and/or
The broadband absorber with the double-loss cavity structure is of a non-curved surface structure or a curved surface structure; and/or
The substrate is made of polymer, non-metal oxide, metal fluoride, metal nitride or metal.
In the technical scheme of the invention, the broadband absorber with the double-lossy-cavity structure comprises a substrate, and a first metal layer, a first dielectric layer, a second metal layer and a second dielectric layer which are sequentially formed on the substrate. The first metal layer and the second metal layer are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, so that the absorber has high light absorption rate. The first dielectric layer and the second dielectric layer are made of transparent materials, so that incident light can pass through the first dielectric layer and the second dielectric layer, and can be reflected back and forth at a dielectric-air interface and a dielectric-metal interface between the second dielectric layer and the second metal layer, and can also be reflected back and forth at the dielectric-air interface and the dielectric-metal interface between the second metal layer, the first dielectric layer and the first metal layer, thereby forming two high-loss cavities. Under the combined action of the two high-loss cavities, the broadband absorber with the double-loss cavity structure can absorb incident light in a visible light-near infrared broadband range, has the characteristic of insensitive polarization angle and is high in photothermal conversion efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a cross-sectional view of a broadband absorber with a double lossy cavity structure according to one embodiment of the present invention;
fig. 2 is an absorption/reflection/transmission curve of a broadband absorber having a double lossy cavity structure in a wide visible-near infrared band according to a first embodiment of the present invention;
FIG. 3 is the absorption rate of the broadband absorber with the double lossy cavity structure in the wavelength band of 430 nm-1400 nm at different incident angles according to the first embodiment of the present invention;
FIG. 4 is the absorption rate of a broadband absorber with a double lossy cavity structure at different incident angles in the wavelength band of 430 nm-1400 nm according to a second embodiment of the present invention;
fig. 5 is an absorption curve of a broadband absorber having a double lossy cavity structure according to a third embodiment of the present invention in a wavelength band of 430nm to 1200nm under normal incident light.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 100 | Broadband absorber with double- |
153 | Second |
| 11 | |
17 | Second metal layer |
| 13 | A |
171 | Third upper surface |
| 131 | A first |
173 | Third lower surface |
| 133 | A first lower surface | 19 | A second |
| 15 | First of allDielectric layer | 191 | A fourth |
| 151 | Second |
193 | The fourth lower surface |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, and the like in a specific posture, and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a broadband absorber 100 having a double lossy cavity structure, comprising:
the metal-clad plate comprises a substrate 11, and a first metal layer 13, a first dielectric layer 15, a second metal layer 17 and a second dielectric layer 19 which are sequentially formed on the substrate 11, wherein the first metal layer 13 and the second metal layer 15 are high-loss metals with imaginary parts of dielectric constants within the range of 8-40. The first dielectric layer 15 and the second dielectric layer 19 are made of transparent materials.
In the technical solution of the present invention, the broadband absorber 100 with a double lossy cavity structure includes a substrate 11, and a first metal layer 13, a first dielectric layer 15, a second metal layer 17, and a second dielectric layer 19 sequentially formed on the substrate 11. The first metal layer 13 and the second metal layer 17 are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, so that the broadband absorber 100 with the double-loss cavity structure has high light absorption rate, and the light energy is rapidly converted into heat energy. The first dielectric layer 15 and the second dielectric layer 19 are made of transparent materials, so that incident light can pass through the first dielectric layer 15 and the second dielectric layer 19, and can be reflected back and forth at a dielectric-air interface and a dielectric-metal interface between the second dielectric layer 19 and the second metal layer 17, and can also be reflected back and forth at a dielectric-air interface and a dielectric-metal interface between the second metal layer 17, the first dielectric layer 15 and the first metal layer 13, thereby forming two high-loss cavities. Under the combined action of the two high-loss cavities, the broadband absorber 100 with the double-loss cavity structure can absorb incident light in a visible light-near infrared broadband range, and has the characteristic of insensitive polarization angle and high photo-thermal conversion efficiency. Specifically, the broadband absorber 100 with the double-loss cavity structure can absorb visible light and near infrared light in a wave band of 430 nm-1400 nm, resonance absorption peaks exist at 470nm and 790nm, and the absorbance is larger than 90%.
The high-loss metal with the imaginary part of the dielectric constant within the range of 8-40 is platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium or nickel. The high-loss metal with the imaginary part of the dielectric constant in the range of 8-40 can enable the broadband absorber 100 with the double-loss cavity structure to have high light absorption rate.
In the technical scheme of the present invention, the first metal layer 13 and the second metal layer 17 may be made of a high-loss metal having an imaginary part of a dielectric constant within a range of 8 to 40, such as platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium, or nickel, so that the first metal layer 13 and the second metal layer 17 have a high light absorption rate. In addition, the metals are not noble metals, so that the broadband absorber 100 with the double-loss cavity structure of the broadband with the double-loss cavity structure has the advantage of low cost.
The transparent material is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride, strontium fluoride, silicon nitride, boron nitride, aluminum nitride, gallium nitride, titanium nitride, aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, indium tin oxide, or silicon dioxide.
In the technical scheme of the present invention, the first dielectric layer 15 and the second dielectric layer 19 are made of transparent materials, so that the first dielectric layer 15 and the second dielectric layer 19 do not absorb incident light, the incident light can pass through the second dielectric layer 19 to reflect back and forth at the dielectric-air interface and the dielectric-metal interface between the second dielectric layer 19 and the second metal layer 17, and the incident light passing through the second dielectric layer 19 and the second metal layer 17 can also pass through the first dielectric layer 15 to reflect back and forth at the dielectric-air interface and the dielectric-metal interface between the second metal layer 17, the first dielectric layer 15 and the first metal layer 13, thereby increasing the light absorption rate of the broadband absorber 100 with the double loss cavity structure.
The thickness range of the first metal layer 13 is 150nm to 200 nm. The first metal layer 13 at this thickness range may provide a transmission (T) of the broadband absorber 100 having the double lossy cavity structure of 0%. That is, incident light is difficult to penetrate through the first metal layer 13 in this thickness range and enter the substrate 11. The broadband absorber 100 with a double lossy cavity structure has an absorption (a) ═ 1-reflectance (R) -transmittance (T). The lower the transmittance (T), the higher the absorptance (a), and when the transmittance (T) is 0, the higher the absorptance (a). At this time, a better absorption rate can be achieved without providing too many metal layers, so that the broadband absorber 100 with the double lossy cavity structure of the present invention has a simple structure.
The thickness range of the second metal layer 17 is 5nm to 15 nm. The second metal layer 17 serves as a light absorbing layer, and the extremely thin second metal layer 17 facilitates the accumulation of heat and the increase of temperature to rapidly convert light energy into thermal energy.
The thickness range of the first dielectric layer 15 is 80 nm-150 nm. The first dielectric layer 15 in the thickness range can adjust the absorption peaks of the two high-loss cavities to be respectively positioned at 470nm and 790nm, namely, the first dielectric layer 15 in the thickness range can enable the absorption peaks of the two high-loss cavities to be respectively positioned in the visible light and near infrared broadband.
The thickness range of the second dielectric layer 19 is 100 nm-200 nm, and the second dielectric layer 19 in the thickness range can be used for realizing impedance matching between the broadband absorber 100 with a double-loss cavity structure and air so as to reduce the reflectivity.
The broadband absorber 100 with the double-lossy-cavity structure is a non-curved structure or a curved structure, and preferably a planar structure.
When the broadband absorber 100 with the double-lossy-cavity structure is a non-curved structure, the polarization directions of incident light on the broadband absorber 100 with the double-lossy-cavity structure are symmetrical, so that the broadband absorber 100 with the double-lossy-cavity structure also has the characteristic of insensitive incidence angles.
Specifically, in an embodiment, the upper and lower surfaces of the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 are all planar, and the thicknesses of the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 are all nano-scale, so that the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 all have planar nano-structures, a dielectric-air interface and a dielectric-metal interface are formed between the second dielectric layer 19 and the second metal layer 17 having the planar nano-structures, and a dielectric-metal interface is formed between the second metal layer 17, the first dielectric layer 15, and the first metal layer 13 having the planar nano-structures.
Incident light may be reflected back and forth at the dielectric-air interface and the dielectric-metal interface between the first dielectric layer 15 and the second dielectric layer 19, and also at the dielectric-metal interface between the second metal layer 17, the first dielectric layer 15, and the first metal layer 13, thereby forming two high-loss cavities. Under the combined action of the two high-loss cavities, the broadband absorber 100 with the double-loss cavity structure can absorb incident light in a wide range of visible light-near infrared bands, and has the characteristic of insensitivity of a polarization angle and the characteristic of insensitivity of an incidence angle.
The substrate 11 is made of polymer, non-metal oxide, metal fluoride, metal nitride, or metal. The substrate 11 is preferably made of a polymer, since the polymer has low thermal conductivity and can reduce the heat loss of the broadband absorber 100 having the double lossy chamber structure.
The polymer can be acrylonitrile-butadiene-styrene (ABS), polycarbonate/ABS blend, copolycarbonate-polyester, acrylic-styrene-acrylonitrile, acrylonitrile (ethylene-polypropylene diamine modified) -styrene, phenylene ether resin, polyphenylene ether/polyamide blend, polybutylene terephthalate, polyamide, phenylene sulfide resin, polyvinyl chloride, high impact polystyrene, low/high density polyethylene, polypropylene, or thermoplastic polyolefin.
The metal may be platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium, or nickel.
The non-metal oxide is silicon dioxide.
The metal oxide is aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, or indium tin oxide.
The metal fluoride is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride or strontium fluoride.
The metal nitride is silicon nitride, boron nitride, aluminum nitride, gallium nitride, or titanium nitride.
The invention also provides a preparation method of the broadband absorber with the double-loss cavity structure, which comprises the following steps:
providing a substrate 11; and
the substrate 11 is sequentially plated with a first metal layer 13, a first dielectric layer 15, a second metal layer 17 and a second dielectric layer 19, wherein the first metal layer 13 and the second metal layer 15 are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, and the first dielectric layer 15 and the second dielectric layer 19 are both made of transparent materials.
In the technical scheme of the invention, the substrate 11 is sequentially plated with the first metal layer 13, the first dielectric layer 15, the second metal layer 17 and the second dielectric layer 19, and the first metal layer 13 and the second metal layer 17 are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, so that the broadband absorber 100 with the double-loss cavity structure has high light absorption rate, and the light energy is rapidly converted into heat energy. The first dielectric layer 15 and the second dielectric layer 19 are made of transparent materials, so that incident light can pass through the first dielectric layer 15 and the second dielectric layer 19, and can be reflected back and forth at a dielectric-air interface and a dielectric-metal interface between the second dielectric layer 19 and the second metal layer 17, and can also be reflected back and forth at a dielectric-air interface and a dielectric-metal interface between the second metal layer 17, the first dielectric layer 15 and the first metal layer 13, thereby forming two high-loss cavities. Under the combined action of the two high-loss cavities, the broadband absorber 100 with the double-loss cavity structure can absorb incident light in a visible light-near infrared broadband range, and has the characteristic of insensitive polarization angle and high photo-thermal conversion efficiency. Specifically, the broadband absorber 100 with the double-loss cavity structure can absorb visible light and near infrared light in a wave band of 430 nm-1400 nm, resonance absorption peaks exist at 470nm and 790nm, and the absorbance is larger than 90%.
The high-loss metal with the imaginary part of the dielectric constant within the range of 8-40 is platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium or nickel. The high-loss metal with the imaginary part of the dielectric constant in the range of 8-40 can enable the broadband absorber 100 with the double-loss cavity structure to have high light absorption rate.
In the technical scheme of the present invention, the first metal layer 13 and the second metal layer 17 may be made of a high-loss metal having an imaginary part of a dielectric constant within a range of 8 to 40, such as platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium, or nickel, so that the first metal layer 13 and the second metal layer 17 have a high light absorption rate. In addition, none of the above metals are noble metals, so that the broadband absorber 100 with a double lossy cavity structure of the present invention has the advantage of low cost.
The transparent material is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride, strontium fluoride, silicon nitride, boron nitride, aluminum nitride, gallium nitride, titanium nitride, aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, indium tin oxide, or silicon dioxide.
In the technical scheme of the present invention, the first dielectric layer 15 and the second dielectric layer 19 are made of transparent materials, so that the first dielectric layer 15 and the second dielectric layer 19 do not absorb incident light, the incident light can pass through the second dielectric layer 19 to reflect back and forth at the dielectric-air interface and the dielectric-metal interface between the second dielectric layer 19 and the second metal layer 17, and the incident light passing through the second dielectric layer 19 and the second metal layer 17 can also pass through the first dielectric layer 15 to reflect back and forth at the dielectric-air interface and the dielectric-metal interface between the second metal layer 17, the first dielectric layer 15 and the first metal layer 13, thereby increasing the light absorption rate of the broadband absorber 100 with the double loss cavity structure.
The thickness range of the first metal layer 13 is 150nm to 200 nm. The first metal layer 13 at this thickness range may provide a transmission (T) of the broadband absorber 100 having the double lossy cavity structure of 0%. That is, incident light is difficult to penetrate through the first metal layer 13 in this thickness range and enter the substrate 11. The broadband absorber 100 with a double lossy cavity structure has an absorption (a) ═ 1-reflectance (R) -transmittance (T). The lower the transmittance (T), the higher the absorptance (a), and when the transmittance (T) is 0, the higher the absorptance (a). At this time, a better absorption rate can be achieved without providing too many metal layers, so that the broadband absorber 100 with the double lossy cavity structure of the present invention has a simple structure.
The thickness range of the second metal layer 17 is 5nm to 15 nm. The second metal layer 17 serves as a light absorbing layer, and the extremely thin second metal layer 17 facilitates the accumulation of heat and the increase of temperature to rapidly convert light energy into thermal energy.
The thickness range of the first dielectric layer 15 is 80 nm-150 nm. The first dielectric layer 15 in the thickness range can adjust the absorption peaks of the two high-loss cavities to be respectively positioned at 470nm and 790nm, namely, the first dielectric layer 15 in the thickness range can enable the absorption peaks of the two high-loss cavities to be respectively positioned in wide bands of visible light and near infrared.
The thickness range of the second dielectric layer 19 is 100 nm-200 nm, and the second dielectric layer 19 in the thickness range can be used for realizing impedance matching between the broadband absorber 100 with a double-loss cavity structure and air so as to reduce the reflectivity.
The broadband absorber 100 with the double-lossy-cavity structure is a non-curved structure or a curved structure, and preferably a planar structure.
When the broadband absorber 100 with the double-lossy-cavity structure is a non-curved structure, the polarization directions of incident light on the broadband absorber 100 with the double-lossy-cavity structure are symmetrical, so that the broadband absorber 100 with the double-lossy-cavity structure also has the characteristic of insensitive incidence angles.
Specifically, in an embodiment, the upper and lower surfaces of the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 are all planar, and the thicknesses of the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 are all nano-scale, so that the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 all have planar nano-structures, a dielectric-air interface and a dielectric-metal interface are formed between the second dielectric layer 19 and the second metal layer 17 having the planar nano-structures, and a dielectric-metal interface is formed between the second metal layer 17, the first dielectric layer 15, and the first metal layer 13 having the planar nano-structures.
Specifically, the first upper surface 131 and the first lower surface 133 of the first metal layer 13 are planar, the second upper surface 151 and the second lower surface 153 of the first dielectric layer 15 are planar, the third upper surface 171 and the third lower surface 173 of the second metal layer 17 are planar, and the fourth upper surface 191 and the fourth lower surface 193 of the second dielectric layer 19 are also planar.
Incident light may be reflected back and forth at the dielectric-air interface and the dielectric-metal interface between the first dielectric layer 15 and the second dielectric layer 19, and also at the dielectric-metal interface between the second metal layer 17, the first dielectric layer 15, and the first metal layer 13, thereby forming two high-loss cavities. Under the combined action of the two high-loss cavities, the broadband absorber 100 with the double-loss cavity structure can absorb incident light in a wide range of visible light-near infrared bands, and has the characteristic of insensitivity of a polarization angle and the characteristic of insensitivity of an incidence angle. The substrate 11 may be coated with the first metal layer 13, the first dielectric layer 15, the second metal layer 17, and the second dielectric layer 19 in sequence over a large area by electron beam evaporation, magnetron sputtering, thermal evaporation, and the like.
The dimensions of the broadband absorber 100 with the double lossy cavity structure can reach the centimeter level. In some embodiments, the size of the broadband absorber 100 with a double lossy cavity structure is no less than 4cm x 4 cm.
The substrate 11 is made of polymer, non-metal oxide, metal fluoride, metal nitride, or metal. The substrate 11 is preferably made of a polymer, since the polymer has low thermal conductivity and can reduce the heat loss of the broadband absorber 100 having the double lossy chamber structure.
The polymer can be acrylonitrile-butadiene-styrene (ABS), polycarbonate/ABS blend, copolycarbonate-polyester, acrylic-styrene-acrylonitrile, acrylonitrile (ethylene-polypropylene diamine modified) -styrene, phenylene ether resin, polyphenylene ether/polyamide blend, polybutylene terephthalate, polyamide, phenylene sulfide resin, polyvinyl chloride, high impact polystyrene, low/high density polyethylene, polypropylene, or thermoplastic polyolefin.
The metal may be platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium, or nickel.
The non-metal oxide is silicon dioxide.
The metal oxide is aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, or indium tin oxide.
The metal fluoride is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride or strontium fluoride.
The metal nitride is silicon nitride, boron nitride, aluminum nitride, gallium nitride, or titanium nitride.
The first embodiment is as follows:
on SiO2A Ti layer with the thickness of 200nm and SiO with the thickness of 100nm are sequentially evaporated on the substrate2Layer, Ti layer with thickness of 10nm, and SiO layer with thickness of 150nm2Layer, the broadband absorber 100 with the double lossy cavity structure of example one was obtained.
The absorption/reflection/transmission curve of the broadband absorber 100 having the double lossy cavity structure of the first embodiment in the visible light-near infrared wide band is detected. Referring to fig. 2, the broadband absorber 100 having the double-loss cavity structure of the first embodiment can absorb visible light and near infrared light in a wavelength band of 430nm to 1400nm, and has resonance absorption peaks at 470nm and 790nm, wherein the absorbance is greater than 90%.
The absorbance of the broadband absorber 100 with the double-loss cavity structure of the first embodiment at different incident angles in the wavelength band of 430nm to 1400nm is detected. Referring to fig. 3, under incident light in a Transverse Electric (TE) mode and a Transverse Magnetic (TM) mode, when an incident angle of the incident light is less than or equal to 68 °, the broadband absorber 100 having the double-lossy-cavity structure of the first embodiment can absorb visible light and near infrared light in a wavelength band of 430nm to 1400nm, and the absorbance is greater than 90%. This shows that the broadband absorber 100 with the double loss cavity structure of the first embodiment has the polarization angle insensitive and incident angle insensitive characteristics.
Example two:
sequentially evaporating a Ti layer with the thickness of 200nm and SiO with the thickness of 100nm on a polyethylene flexible substrate2Layer, Ti layer with thickness of 10nm, and SiO layer with thickness of 150nm2Layer, the broadband absorber 100 with the double lossy cavity structure of example two was obtained.
The absorbance of the broadband absorber 100 with the double-loss cavity structure of the second embodiment at different incident angles in the wavelength band of 430nm to 1400nm is detected. Referring to fig. 4, the broadband absorber 100 with the double loss cavity structure of this second embodiment has an absorbance higher than 89% at an incident angle of 65 ° or less. This shows that the broadband absorber 100 with the double lossy cavity structure of the second embodiment has the polarization angle insensitive and incident angle insensitive characteristics.
Example three:
on SiO2A W layer with the thickness of 200nm and SiO with the thickness of 100nm are sequentially evaporated on the substrate2Layer, W layer with thickness of 10nm, and SiO layer with thickness of 150nm2Layer, the broadband absorber 100 with the double lossy cavity structure of example three was obtained.
The absorbance of the broadband absorber 100 with the double-loss cavity structure of the third embodiment in the wavelength band of 430nm to 1200nm under the normal incident light is detected. Referring to fig. 5, the broadband absorber 100 with the double-loss cavity structure of the third embodiment can absorb visible light and near infrared light in the wavelength band of 430nm to 1200nm, and the absorption rate of the absorber in the wavelength band of 430nm to 1180nm is greater than 90% under the perpendicular incident light. This shows that the broadband absorber 100 with the double-lossy-cavity structure of example three has a large light absorption rate in the wavelength band of 430nm to 1180 nm.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which can be directly or indirectly applied to other related technical fields without departing from the spirit of the present invention, are included in the scope of the present invention.
Claims (10)
1. The broadband absorber with the double-loss cavity structure is characterized by comprising a substrate, a first metal layer, a first dielectric layer, a second metal layer and a second dielectric layer, wherein the first metal layer, the first dielectric layer, the second metal layer and the second dielectric layer are sequentially formed on the substrate, the first metal layer and the second metal layer are made of high-loss metal with dielectric constants of which imaginary parts are within a range of 8-40, and the first dielectric layer and the second dielectric layer are made of transparent materials.
2. The broadband absorber of claim 1, wherein the high loss metal having an imaginary part of the dielectric constant in the range of 8 to 40 is platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium, or nickel.
3. The broadband absorber with a double lossy cavity structure of claim 1, wherein the transparent material is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride, strontium fluoride, silicon nitride, boron nitride, aluminum nitride, gallium nitride, titanium nitride, aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, indium tin oxide, or silicon dioxide.
4. The broadband absorber having a double lossy cavity structure of claim 1, wherein the first metal layer has a thickness in the range of 150nm to 200 nm; and/or
The thickness range of the second metal layer is 5 nm-15 nm; and/or
The thickness range of the first dielectric layer is 80 nm-150 nm; and/or
The thickness range of the second dielectric layer is 100 nm-200 nm.
5. The broadband absorber of any one of claims 1-4 having a double lossy cavity structure, wherein the broadband absorber of the double lossy cavity structure is a non-curved structure or a curved structure.
6. The broadband absorber having a double lossy cavity structure of any one of claims 1 to 4, wherein the substrate is a polymer, a non-metal oxide, a metal fluoride, a metal nitride, or a metal.
7. A preparation method of a broadband absorber with a double-loss cavity structure comprises the following steps:
providing a substrate; and
and sequentially plating a first metal layer, a first dielectric layer, a second metal layer and a second dielectric layer on the substrate, wherein the first metal layer and the second metal layer are both made of high-loss metal with the imaginary part of the dielectric constant within the range of 8-40, and the first dielectric layer and the second dielectric layer are both made of transparent materials.
8. The method for preparing a broadband absorber with a double lossy-cavity structure according to claim 7, wherein the high-loss metal with the imaginary part of the dielectric constant in the range of 8 to 40 is platinum, titanium, tungsten, chromium, iron, tin, aluminum, palladium or nickel.
9. The method of claim 7, wherein the transparent material is magnesium fluoride, barium fluoride, calcium fluoride, lanthanum fluoride, strontium fluoride, silicon nitride, boron nitride, aluminum nitride, gallium nitride, titanium nitride, aluminum oxide, zirconium oxide, zinc oxide, yttrium oxide, neodymium oxide, beryllium oxide, titanium dioxide, indium tin oxide, or silicon dioxide.
10. The method of making a broadband absorber with a double lossy cavity structure according to any of claims 7 to 9, wherein the thickness of the first metal layer is in the range of 150nm to 200 nm; and/or
The thickness range of the second metal layer is 5 nm-15 nm; and/or
The thickness range of the first dielectric layer is 80 nm-150 nm; and/or
The thickness range of the second dielectric layer is 100 nm-200 nm; and/or
The broadband absorber with the double-loss cavity structure is of a non-curved surface structure or a curved surface structure; and/or the substrate is made of polymer, non-metal oxide, metal fluoride, metal nitride or metal.
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