CN210294582U - Visible light broadband absorption structure - Google Patents
Visible light broadband absorption structure Download PDFInfo
- Publication number
- CN210294582U CN210294582U CN201921545418.5U CN201921545418U CN210294582U CN 210294582 U CN210294582 U CN 210294582U CN 201921545418 U CN201921545418 U CN 201921545418U CN 210294582 U CN210294582 U CN 210294582U
- Authority
- CN
- China
- Prior art keywords
- metal layer
- absorption
- visible light
- thickness
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model provides a visible light broadband absorbent structure, absorbent structure includes metal level and the dielectric layer that a plurality of layers superpose the setting in turn, wherein, the refracting index scope of dielectric layer is 1.4-2.5. The absorption structure of the utility model has the characteristic of angle insensitivity, and still has the characteristic of high-efficiency absorption of broadband when the wide-angle incidence is carried out; the broadband absorption structure of the utility model also has the polarization insensitivity, and has similar high-efficiency absorption characteristics under the incident conditions of different polarization angles; still, the utility model discloses an absorption structure design is simple, easily preparation, combines current coating film technology, can prepare in batches greatly, and convenient rapid volume production is put into market.
Description
Technical Field
The utility model relates to a light line width wave band absorbing structure, in particular to visible light broadband absorbing structure can be applied to fields such as no printing ink printing, solar cell, photovoltaic, light show, thermal emission and stealthy.
Background
The traditional printing technology uses ink with different colors to print images and colors, has the problem of easy fading, and the ink contains heavy metals, benzene, ketones and other substances harmful to human bodies. The existing ink-free printing technology has little research on black realization, and can realize black only by realizing high-efficiency absorption in a wide band range of visible light and insensitivity of absorption characteristics to the polarization state and the incident angle of incident light.
In the field of solar cells, means for improving absorption efficiency mainly focus on antireflection coatings and high-performance absorption, and a traditional medium moth-eye structure as an antireflection structure cannot well act in the whole solar spectrum range and cannot serve as a light absorption device to achieve high absorption.
There is a need for a visible light broadband absorbing structure that is simple in structure and easy to manufacture.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a visible light broadband absorbent structure can realize the average high efficiency absorption of whole visible light wave band, and its simple structure, easily preparation.
The technical problem of the utility model is solved and the following technical scheme is adopted to realize.
In order to achieve the above purpose, the utility model provides a following technical scheme: the absorption structure comprises a plurality of metal layers and dielectric layers which are alternately stacked, wherein the refractive index of the dielectric layers ranges from 1.4 to 2.5.
Further, the absorption structure comprises at least five layers, wherein the absorption structure comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer from bottom to top, the thickness of the first metal layer is greater than or equal to 50nm, the thickness of the first dielectric layer is 50nm-400nm, the thickness of the second metal layer is 5nm-50nm, the thickness of the second dielectric layer is 20nm-120nm, and the thickness of the third metal layer is 0-20 nm.
Furthermore, the first metal layer, the second metal layer and the third metal layer are made of the same material.
Further, the thickness of the first metal layer is larger than or equal to that of the second metal layer.
Furthermore, the metal layer and the dielectric layer are both continuous structures with smooth surfaces.
Further, the metal layer is one or more of nickel, chromium, germanium and tungsten, or one or more of a mixture of two or more of the metals.
Further, the metal layer is germanium or a mixture of germanium and one or more of nickel, chromium and tungsten.
Further, the metal layer is nickel, or a mixture of nickel and one or more of germanium, chromium and tungsten.
Further, the dielectric layer is one or two of silicon dioxide and silicon nitride.
The beneficial effects of the utility model reside in that:
the visible light broadband absorption structure is simple in structure and easy to prepare, and can realize that the average absorption efficiency of 400-700 nm waveband is more than 90%, and the absorption efficiency is more than 99% at 425nm and 590 nm; the absorption structure of the utility model has the characteristic of angle insensitivity, and still has the characteristic of high-efficiency absorption of broadband when the wide-angle incidence is carried out; in addition, the broadband absorption structure of the utility model has polarization insensitivity and similar high-efficiency absorption characteristics under the incident conditions of different polarization angles; still, the utility model discloses an absorption structure design is simple, easily preparation, combines current coating film technology, can prepare in batches greatly, and convenient rapid volume production is put into market.
The above description is only an overview of the technical solution of the present invention, and in order to make the technical means of the present invention clearer and can be implemented according to the content of the specification, the following detailed description is made with reference to the preferred embodiments of the present invention and accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of the visible light broadband absorption structure of the present invention.
Fig. 2 is a schematic diagram of a preferred structure of the visible light broadband absorbing structure of the present invention.
Fig. 3 is a graph of the reflection, transmission and absorption versus wavelength for a visible light broadband absorbing structure of the present invention.
Fig. 4 is a graph of the relationship between the incident light angle and the absorption efficiency of the visible light broadband absorption structure under the TM polarized light condition.
Fig. 5 is a graph of the relationship between the incident light angle and the absorption efficiency of the visible light broadband absorption structure under the TE polarized light condition.
Fig. 6 shows a graph of the influence of the change in the thickness of the fifth layer nickel metal layer on the absorption spectrum.
Fig. 7 is a graph showing the effect of thickness variation of the fourth layer silicon dioxide layer on the absorption efficiency.
FIG. 8 is a graph of the effect of thickness variation of the third layer metal layer on absorption efficiency.
FIG. 9 is a graph showing the effect of thickness variation of the second silicon oxide layer on absorption efficiency.
Fig. 10 is a graph showing the effect of thickness variation of the first nickel metal layer on the absorption efficiency.
Description of the symbols:
1 a first metal layer;
2 a first dielectric layer;
3 a second metal layer;
4 a second dielectric layer;
5 a third metal layer.
Detailed Description
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
Fig. 1 is a schematic structural diagram of the visible light broadband absorption structure of the present invention. The absorption structure comprises a plurality of metal layers and dielectric layers which are alternately stacked, and the outermost layer is always the metal layer. The absorption structure comprises at least five layers, and in the embodiment, the visible light broadband absorption structure comprises a five-layer structure, namely a first metal layer 1, a first dielectric layer 2, a second metal layer 3, a second dielectric layer 4 and a third metal layer 5 from bottom to top. The first metal layer 1, the second metal layer 3 and the third metal layer 5 are one or more of nickel, chromium, germanium and tungsten, or one or more of a mixture of two or more of the above metals. Or, the first metal layer 1, the second metal layer 3 and the third metal layer 5 are germanium, or a mixture of germanium and one or more of nickel, chromium and tungsten; or the first metal layer 1, the second metal layer 3 and the third metal layer 5 are nickel, or a mixture of nickel and one or more of germanium, chromium and tungsten. In the present application, the first metal layer 1, the second metal layer 3 and the third metal layer 5 are made of the same material and are made of the same metal, and the thickness of the first metal layer 1 is greater than or equal to that of the second metal layer 3.
The refractive index of the dielectric layer is 1.4-2.5, and can be silicon dioxide, silicon nitride and other materials. The metal layer and the dielectric layer are both of smooth and continuous surface structures. The thickness of the first metal layer 1 is not less than 50 nm; the thickness range of the first dielectric layer 2 is between 50nm and 400 nm; the thickness of the second metal layer 3 is between 5nm and 50 nm; the thickness of the second dielectric layer 4 is between 20nm and 120 nm; the thickness of the third metal layer 5 is between 0 and 20 nm.
The utility model discloses a better structure of visible light broadband absorbent structure is shown in fig. 2, and wherein the material of metal level is nickel, and the material of dielectric layer is silica, and it is nickel-silica-nickel respectively from bottom to top, selects through reasonable selection material and each layer thickness, arouses energy local mode such as guided film resonance and magnetic field resonance, realizes that visible light broadband high efficiency absorbs.
As shown in FIG. 3, in a preferred structure, the visible light broadband absorption structure of the present invention is Ni-SiO-Ni, the parameters are 100nm-257nm-10nm-83nm-4nm from bottom to top, the average absorption efficiency of 400nm-700nm wavelength band is more than 90%, and at 425nm and 590nm, the absorption efficiency is more than 99%, at this time, the reflection and transmission are nearly 0.
Fig. 4 is a graph of the relationship between the incident light angle and the absorption efficiency of the visible light broadband absorption structure under the TM polarized light condition. As shown in fig. 4, in the process of gradually increasing the incident angle of the incident light from 0 ° to 60 °, the absorption efficiency of the absorption structure is still maintained at more than 70%, the influence with the change of the angle is small, the angle is increased to 80 °, and the absorption efficiency is greatly reduced. Therefore, the utility model discloses a visible light broadband absorbing structure still has better broadband absorption characteristic when different angles are incident under the TM polarized light condition.
Fig. 5 is a graph of the relationship between the incident light angle and the absorption efficiency of the visible light broadband absorption structure under the TE polarized light condition. As shown in fig. 5, in the process of gradually increasing the incident angle of the incident light from 0 ° to 80 °, the absorption efficiency of the absorption structure gradually decreases, and the overall absorption efficiency is still greater than 70% in the range of 0 ° to 40 °. Therefore, the utility model discloses a visible light broadband absorbing structure still has better broadband absorption characteristic when different angles are incident under the TE polarized light condition. The utility model discloses absorbent structure has the insensitive characteristic of angle, when wide angle incident, still has broadband high efficiency absorption characteristic. Furthermore, the utility model discloses a broadband absorption structure has polarization insensitive characteristic, under the incident condition of different polarization angles, has similar high efficiency absorption characteristic. Still, the utility model discloses an absorption structure design is simple, easily preparation, combines current coating film technology, can prepare in batches greatly, and convenient rapid volume production is put into market.
To further analyze the effect of the variation of the single structural parameter on the absorption spectrum, as shown in fig. 6, fig. 6 shows the effect of the variation of the thickness 5 of the third metal layer on the absorption spectrum, wherein the third metal layer 5 is a nickel metal layer. It can be seen that in order to satisfy the overall high absorption efficiency in the 400nm-700nm band, the thickness of the nickel metal layer 5 may be set to 4nm, at which the overall absorption efficiency is greater than 90%, and at 425nm and 590nm, the absorption efficiency is greater than 99%, at which the reflection and transmission are nearly 0.
To further analyze the effect of the variation of the thickness 4 of the second dielectric layer on the absorption efficiency, the second dielectric layer 4 was a silicon dioxide layer, as shown in fig. 7. Fig. 7 shows the effect of the variation in the thickness of the silicon dioxide layer 4 on the absorption efficiency. As the thickness of the silicon dioxide layer 4 increases from 40nm to 120nm with a 20nm spacing, it has been found that the overall absorption efficiency increases first and then decreases, with a high absorption efficiency around 80 nm.
To further analyze the effect of the thickness variation of the second metal layer 3 on the absorption efficiency, the material of the second metal layer 3 was nickel as described above. As shown in fig. 8, at 0nm, that is, when the second metal layer 3 is not provided, the overall absorption efficiency is suddenly reduced, and at this time, it is structurally disadvantageous to construct a resonance model, and the overall high-efficiency absorption characteristic is not achieved. The thickness of the second metal layer 3 is gradually increased, and the thickness of the second metal layer has high absorption efficiency in the vicinity of 10nm in consideration of the total absorption efficiency of 400nm to 700 nm.
In order to further analyze the effect of the thickness variation of the first dielectric layer 2 on the absorption efficiency, the first dielectric layer 2 is a silicon dioxide layer. As shown in fig. 9, as the thickness of the silicon dioxide layer 2 increases from 100nm to 400nm, the overall absorption efficiency increases and then decreases, and the thickness reaches about 250nm, which provides high absorption characteristics.
In order to further analyze the influence of the thickness variation of the first metal layer 1 on the absorption efficiency, the first metal layer 1 is a nickel metal layer. As shown in fig. 10, the overall absorption efficiency of the nickel metal layer 1 does not change much as it increases from 30nm to 110nm, but it decreases significantly below 50nm, and therefore, the thickness of the underlayer needs to be greater than 50 nm.
It is worth mentioning, the utility model discloses a many photoelectric field can be applied to visible light broadband absorbent structure, for example solar cell, hot photovoltaic, aspect such as stealthy also can provide the solution for there is not the black realization of ink printing.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A visible light broadband absorption structure is characterized in that: the absorption structure comprises a plurality of metal layers and dielectric layers which are alternately stacked, wherein the refractive index of the dielectric layers ranges from 1.4 to 2.5.
2. The visible light broadband absorbing structure of claim 1, wherein: the absorption structure comprises at least five layers, and the absorption structure of at least five layers comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer from bottom to top in sequence.
3. The visible light broadband absorbing structure of claim 2, wherein: the thickness of the first metal layer is greater than or equal to 50nm, the thickness of the first dielectric layer is 50nm-400nm, the thickness of the second metal layer is 5nm-50nm, the thickness of the second dielectric layer is 20nm-120nm, and the thickness of the third metal layer is 0-20 nm.
4. The visible light broadband absorbing structure of claim 2, wherein: the first metal layer, the second metal layer and the third metal layer are made of the same material.
5. The visible light broadband absorbing structure of claim 2, wherein: the thickness of the first metal layer is larger than or equal to that of the second metal layer.
6. The visible light broadband absorbing structure of claim 1, wherein: the metal layer and the dielectric layer are both of a continuous structure with smooth surfaces.
7. The visible light broadband absorbing structure of claim 1, wherein: the metal layer is one or more of nickel, chromium, germanium and tungsten, or one or more of a mixture of two or more of the metals.
8. The visible light broadband absorbing structure of claim 1, wherein: the metal layer is germanium or a mixture of germanium and one or more of nickel, chromium and tungsten.
9. The visible light broadband absorbing structure of claim 1, wherein: the metal layer is nickel or a mixture of nickel and one or more of germanium, chromium and tungsten.
10. The visible light broadband absorbing structure of claim 1, wherein: the dielectric layer is one or two of silicon dioxide and silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921545418.5U CN210294582U (en) | 2019-09-17 | 2019-09-17 | Visible light broadband absorption structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921545418.5U CN210294582U (en) | 2019-09-17 | 2019-09-17 | Visible light broadband absorption structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210294582U true CN210294582U (en) | 2020-04-10 |
Family
ID=70063472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921545418.5U Active CN210294582U (en) | 2019-09-17 | 2019-09-17 | Visible light broadband absorption structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210294582U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112485850A (en) * | 2020-12-21 | 2021-03-12 | 北京大学 | Broadband absorber with double-loss cavity structure and preparation method thereof |
| CN112859216A (en) * | 2021-01-14 | 2021-05-28 | 北京科技大学 | Multilayer thin film structure with significant directionally selective emissivity |
| CN113156564A (en) * | 2021-05-07 | 2021-07-23 | 大连理工大学 | Method for realizing full-color display metamaterial with eye protection function |
| WO2022253082A1 (en) * | 2021-05-31 | 2022-12-08 | 苏州大学 | Visible light broadband perfect absorber based on transition metal film layer, and preparation method therefor |
-
2019
- 2019-09-17 CN CN201921545418.5U patent/CN210294582U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112485850A (en) * | 2020-12-21 | 2021-03-12 | 北京大学 | Broadband absorber with double-loss cavity structure and preparation method thereof |
| CN112859216A (en) * | 2021-01-14 | 2021-05-28 | 北京科技大学 | Multilayer thin film structure with significant directionally selective emissivity |
| CN112859216B (en) * | 2021-01-14 | 2021-11-30 | 北京科技大学 | Multilayer thin film structure with significant directionally selective emissivity |
| CN113156564A (en) * | 2021-05-07 | 2021-07-23 | 大连理工大学 | Method for realizing full-color display metamaterial with eye protection function |
| WO2022253082A1 (en) * | 2021-05-31 | 2022-12-08 | 苏州大学 | Visible light broadband perfect absorber based on transition metal film layer, and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN210294582U (en) | Visible light broadband absorption structure | |
| Wu et al. | A review of spectral controlling for renewable energy harvesting and conserving | |
| Alimanesh et al. | Broadband anti-reflective properties of grown ZnO nanopyramidal structure on Si substrate via low-temperature electrochemical deposition | |
| CN103513316B (en) | Selective absorption filtering structure | |
| CN110346854B (en) | Ultra-narrow multi-band tunable perfect absorber irrelevant to polarization | |
| CN110196464B (en) | Method for realizing ultra-wideband light absorption and composite microstructure | |
| US20140133045A9 (en) | Non-dichroic omnidirectional structural color | |
| CN210040564U (en) | Double-layer terahertz wave absorber based on vanadium dioxide and cavity resonance | |
| CN110146949A (en) | A kind of narrow-band spectrum filter structure and preparation method thereof | |
| CN103094390B (en) | Carbon-base photonic crystal back reflection device for film solar cell and manufacture method of carbon-base photonic crystal back reflection device | |
| CN108732663A (en) | Wide-band bidirectional wide-angle absorbent structure and preparation method thereof | |
| CN105807353A (en) | Broadband absorbing and filtering structure for visible light and infrared wavebands and preparing method thereof | |
| CN111338011A (en) | Method for realizing ultra-wideband light absorption enhancement by adopting composite microstructure | |
| CN107270564B (en) | A kind of sunlight heat absorber coatings | |
| CN110376666B (en) | Ultra-wideband perfect absorber of mid-infrared band and preparation method thereof | |
| CN108515743B (en) | Metal/medium ultra-wideband absorption film and preparation method thereof | |
| Bhupathi et al. | Recent progress in vanadium dioxide: The multi-stimuli responsive material and its applications | |
| Welser et al. | Broadband nanostructured antireflection coating on glass for photovoltaic applications | |
| CN110673249A (en) | Reflective filter | |
| Wang et al. | Switchable wideband terahertz absorber based on refractory and vanadium dioxide metamaterials | |
| CN110658581B (en) | Color filter, nano color filter crystal and coating | |
| Liu et al. | High-color-purity, high-brightness and angle-insensitive red structural color | |
| Zong et al. | Recent advances on perfect light absorbers and their promise for high-performance opto-electronic devices | |
| CN107404834B (en) | Electromagnetic wave absorbing structure and manufacturing method thereof | |
| Chang | Modeling and design of Ag, Au, and Cu nanoplasmonic structures for enhancing the absorption of P3HT: PCBM-based photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |