CN110289335A - Based on In2Se3Near-infrared long wave photodetector of driving certainly of/Si vertical structure hetero-junctions and preparation method thereof - Google Patents
Based on In2Se3Near-infrared long wave photodetector of driving certainly of/Si vertical structure hetero-junctions and preparation method thereof Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/24—Vacuum evaporation
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- C23C14/34—Sputtering
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Abstract
The invention discloses be based on In2Se3Near-infrared long wave photodetector of driving certainly of/Si vertical structure hetero-junctions and preparation method thereof is that etching forms Si window in the Si substrate with insulating layer, deposits In on the Si of window by magnetron sputtering2Se3Film constructs In2Se3/ Si vertical structure hetero-junctions, and transfer graphene to In2Se3The production of photodetector is completed in the hearth electrode of Si backside of substrate building Ohmic contact as transparent top electrode in top.The present invention utilizes In caused by defect2Se3Film makes detector still have apparent photoresponse other than the absorption limit of Si, compensates for silicon-based devices for the deficiency of near-infrared long-wave response in the influx and translocation of near-infrared；Meanwhile near-infrared long wave photoelectric detector performance is superior, preparation process is simple and easy for of the invention driving certainly, has good compatibility with existing Si base semiconductor technique.
Description
One, technical field
The present invention relates to a kind of from driving near-infrared long wave photodetector, is specifically based on In2Se3/ Si vertical junction
The driving near-infrared long wave photodetector certainly of structure hetero-junctions.
Two, background technique
Infrared ray is non-visible light of the wavelength between 760nm to 1mm, covers the wave band of object heat radiation, and by
It is longer in wavelength, it is easy to happen diffraction phenomena, there is good cloud and mist, flue dust penetrability.Infrared photoelectric detector is as human eye
Effective extension, in civilian optic communication, imaging of medical, Atmospheric Survey, meteorology and military navigation, night vision, aviation
Space flight, Weapon detecting etc. suffer from very extensive application.
Near infrared light refers to electromagnetic wave of the wavelength within the scope of 780~2526nm, and usual people are divided into close red again
Two regions of outer shortwave (780~1100nm) and near-infrared long wave (1100~2526nm).Near-infrared long wave (such as 1300nm,
1550nm) due in SiO2In low attenuation rate, be widely used in fiber optic communication, especially telecommunication field.
Current commercialized near infrared photodetector mainly based on Si base, Ge base and InGaAs base product, due to
The emphasis of the difference of near infrared photodetector application field, all kinds of detector performances is also had nothing in common with each other, according to work characteristics
Several major class such as highly-sensitive detector, quick response detector and high detection rate detector can be substantially divided into.Si base device
With cracking response speed, it is suitable for high speed field of detecting, but its forbidden bandwidth (1.12eV) determines its investigative range
About in 200nm-1100nm.Ge base device investigative range is 800nm-1800nm, due to its low dark current and noise equivalent function
Rate is very suitable for the detection of dim light.The investigative range of InGaAs base device is 800nm-1700nm, such currently commercially detection
The excellent combination property of device has the characteristics that fast response speed and high detection rate.Nevertheless, complicated controllable microelectronics adds
Work technique is still further improved.With the continuous development of science and technology, low-power consumption, high sensitivity, be easily integrated with it is polynary
Array also becomes the key parameter for measuring photoelectric device.
The high-performance infrared photoelectric detector with existing silicon technology with good process compatibility is current near-infrared long wave
One significant developing direction of photodetector.Compared with photoconduction type photodetector, schottky junction or p-n junction type photoelectricity are visited
Surveying device has more excellent high frequency characteristics, and due to photovoltaic effect, such device is expected to building and visits from driving photoelectricity
Device is surveyed, is worked under conditions of being not necessarily to additional power source.With being widely used for portable device and wearable device, this type
Photodetector is especially noticeable.2016, Hongbin Zhang etc. reported high-responsivity, high detection rate, supper-fast opens up
Flutter insulator Bi2Se3/ silicon heterostructure wideband photodetectors, the detector is in 1310nm (O wave band) and 1550nm (C-band)
Communication wavelengths under show typical photoelectric current performance of handoffs (ACS Nano 2016,10,5113-5122).In recent years, Chao
Xie etc. reports multilayer PtSe2/ Si high performance wideband heterojunction photoelectric detector, the heterojunction device is in deep ultraviolet to close red
There is high susceptibility in the wide spectral range of (200-1550nm) outside, is shown under the communication wavelengths of 1310 and 1550nm
33.25 and 0.57mAW-1Photocurrent response degree (Nanoscale 2018,10,15285).Xiao Peng etc. reports solution
The 3D RGO-MoS of method processing2/ Pyramid Si hetero-junctions ultra wide band detector, investigative range can reach 4.3 μm, 0V bias
When under 808nm, 1310nm and 1550nm illumination corresponding responsiveness be respectively 21.8AW-1、11.8mAW-1And 10.6mAW-1,
Detectivity is respectively 3.8 × 1015Jones、2.04×1012Jones and 1.83 × 1012Jones(Adv.Mater.2018,30,
1801729)。
The above Si base breaches the detection limit of Si from driving photodetection, has expanded the working range of Si base detector
(400-1100nm), however it inevitably depends on high-quality material growing technology (such as molecular formula extension of complicated difficult control
Growth) and growth conditions.This pushes people constantly to seek high-performance silicon-based from the simple of driving near-infrared long wave photodetector
Easy preparation method.
Three, summary of the invention
On basis of the existing technology, the present invention is directed to construct to be based on In2Se3/ Si vertical structure hetero-junctions from
Near-infrared long wave photodetector and preparation method thereof is driven, is had emphatically in silicon substrate near-infrared long wave photodetector development field
The meaning wanted, the technical problem to be solved is that the γ-In for using magnetron sputtering method to deposit defect on n-type silicon substrate2Se3It is thin
Film constructs vertical heterojunction structure, and then realizes from the preparation for driving near-infrared long wave photodetector.
The present invention solves technical problem, adopts the following technical scheme that
The present invention is based on In2Se3Driving near-infrared long wave photodetector, the feature certainly of/Si vertical structure hetero-junctions exist
In: use planar silicon of the upper surface with insulating layer as substrate；The insulating layer of middle section is performed etching and is exposed flat
Face silicon forms detector window, and the insulating layer that two sides do not etch is to prevent the electrode of subsequent preparation from contacting with planar silicon；It is detecting
In is deposited by magnetron sputtering on device window2Se3Film constructs In2Se3/ Si hetero-junctions；It shifts above graphene to hetero-junctions,
And the insulating layer not etched with two sides partly overlaps, the graphene is as transparent top electrode and In2Se3Film forms ohm and connects
Touching；In the first metal film electrode of graphene disposed thereon contacted with insulating layer, Ohmic contact is formed with graphene；In plane
The second metal film electrode is brushed at the back side of silicon, forms Ohmic contact with planar silicon.
Further, the planar silicon conduction type is N-shaped, and resistivity is < 0.01 Ω cm.
Further, the insulating layer is SiO2、Si3N4、Ta2O5、HfO2Or Al2O3Layer, or be insulating tape；It is described exhausted
The resistivity of edge layer is greater than 1 × 103Ω cm, with a thickness of 100-500nm.
Further, the detector window is formed by exposure mask protection and lithographic technique, and minimum feature size is 5 μm,
The minimum range of the first metal film electrode of Edge Distance is 1 μm.
Further, the In2Se3Film is γ phase, is obtained by radio-frequency magnetron sputter method, preparation condition are as follows: background is true
Reciprocal of duty cycle is that air pressure is lower than 1.9 × 10-4Pa, working gas are the argon gas that purity is not less than 99.9%, gas flow 20sccm, work
Making air pressure is 0.5Pa, sputtering power 80W, silicon to 360 DEG C, target between sample substrate at a distance from be 5cm, sputtering
Time is 1.5-4.5 minutes.
Further, the graphene is the single or double layer graphene obtained by chemical vapour deposition technique, migration
Rate is 1000-15000cm2V-1s-1, by the wet process transfer techniques of PMMA auxiliary, detector window overlying regions are transferred to, are made
For transparent top electrode.
Further, first metal film electrode is Au electrode, Ag electrode, Ti/Au combination electrode, Cr/Au compound
Electrode, Ni/Au combination electrode or Pt electrode；The Au electrode, Ag electrode, Pt electrode with a thickness of 30-100nm；The Ti/Au
Combination electrode, Cr/Au combination electrode, Ni/Au combination electrode are to continue to sink on Ti, Cr, Ni electrode of thickness 5-10nm respectively
The Au electrode of product 30-100nm.
Further, second metal film electrode is In/Ga alloy electrode or Ag electrode, is steamed by brushing or vacuum
The mode of plating is formed, with a thickness of 30-100nm.
Production method of the present invention from near-infrared long wave photodetector is driven, includes the following steps:
S1, it after the planar silicon with insulating layer successively to be used to acetone, alcohol, deionized water ultrasonic cleaning, dries up spare；
S2, pass through adhesive tape exposure mask and lithographic technique, the insulating layer etching of specific position in substrate is removed and exposed flat
Face silicon forms detector window；
S3, on the detector window by way of magnetron sputtering plating one layer of densification In of sputtering sedimentation2Se3Film,
Film is completely covered and without departing from the detector window, sputtering condition are as follows: background vacuum is that air pressure is lower than 1.9 × 10-4Pa,
Working gas is not less than 99.9% argon gas, gas flow 20sccm, operating air pressure 0.5Pa for purity, and sputtering power is
80W, silicon to 360 DEG C, target between sample substrate at a distance from be 5cm, sputtering time is 1.5-4.5 minutes；
S4, the area that the graphene on the copper foil of chemical vapour deposition technique preparation is cut into particular size, are greater than detection
Device window area and be less than area of base；In graphene front spin coating PMMA, 85 DEG C of heating are put into after five minutes in copper etching liquid
(hydrochloric acid: water: copper sulphate=50mL:50mL:10g), makes it face up and floats on etching liquid；After copper foil is etched completely,
SiO is transferred graphene to using wet process transfer2And In2Se3Then the top of film heats 30 minutes for 85 DEG C, places into acetone
Removal surface PMMA is impregnated in solution, remaining graphene is as transparent top electrode；
S5, using evaporating deposition technique or brush conducting resinl mode, made above the insulating layer for being covered with graphene
First metal film electrode, the contact to avoid metal film electrode with silicon base；
S6, one layer of back side polishing to planar silicon, brushing conducting resinl, form the second metal film electrode, that is, are based on
In2Se3The driving near-infrared long wave photodetector certainly of/Si vertical structure hetero-junctions.
Compared with the prior art, the beneficial effects of the present invention are embodied in:
1, the γ-In of single-phase is obtained by magnetically controlled sputter method2Se3Film, defect lead to near-infrared Long wavelength region
It is significant to absorb, so that In2Se3/ Si vertical structure hetero-junctions still has significant photoresponse other than the absorption limit of Si, makes up silicon
The deficiency that base device responds near-infrared Long wavelength region realizes the photodetection of more long-wave band.
2, device is using graphene as top transparent electrode.The electrode has good translucency, while having good
Carrier mobility so that In2Se3/ Si vertical structure hetero-junctions can preferably receive light, and can collect photoproduction rapidly
Carrier reduces the compound of photo-generated carrier, helps to promote device photoelectric current and response speed.
3, the preparation process of device is simple and easy, has good compatibility with existing silicon-based semiconductor technique, is easy to real
Existing device is in the integrated of existing ic core on piece.
Four, Detailed description of the invention
Fig. 1 is that the present invention is based on In2Se3The device from driving near-infrared long wave photodetector of/Si vertical structure hetero-junctions
Part structural schematic diagram；Wherein 1 is planar silicon, and 2 be insulating layer, and 3 be In2Se3Film, 4 be graphene, and 5 be the first metallic film electricity
Pole, 6 be the second metal film electrode.
Fig. 2 is that the present invention is based on In2Se3The device from driving near-infrared long wave photodetector of/Si vertical structure hetero-junctions
Part preparation process schematic diagram.
Fig. 3 is In in the embodiment of the present invention 12Se3The X ray diffracting spectrum of film.
Fig. 4 is In in the embodiment of the present invention 12Se3The Raman spectrum of film.
Fig. 5 is In in the embodiment of the present invention 12Se3The thickness of film characterizes.
Fig. 6 is In in the embodiment of the present invention 12Se3Film, Si substrate and In2Se3The absorption map of/Si hetero-junctions.
Fig. 7 is In in the embodiment of the present invention 12Se3The typical current-voltage characteristic curve of/Si vertical structure hetero-junctions, figure
In it can be seen that under 808nm illumination (light intensity about 1mWcm-2), device has significant photovoltaic property, and open-circuit voltage is
0.222V, short circuit current are 26.5 μ A.
Fig. 8 is In in the embodiment of the present invention 12Se3/ Si vertical structure hetero-junctions is under zero-bias, 808nm difference light intensity
Current-voltage characteristic curve.
Fig. 9 is In in the embodiment of the present invention 12Se3/ Si vertical structure hetero-junctions is when frequency is under the incident light of 3kHz
Between respond map, it can be seen that device rise time and fall time are respectively 35.2 μ s and 114.8 μ s in figure.
Figure 10 is In in the embodiment of the present invention 12Se3Spectral response of/Si vertical structure the hetero-junctions under zero-bias, in figure
It can be seen that device has significant photoresponse in ultraviolet-visible-near infrared region.
Figure 11 is In in the embodiment of the present invention 12Se3In zero-bias, 1300nm, (light intensity is about/Si vertical structure hetero-junctions
0.702mWcm-2) time response map under illumination.
Figure 12 is In in the embodiment of the present invention 12Se3In zero-bias, 1550nm, (light intensity is about/Si vertical structure hetero-junctions
1.756mWcm-2) time response map under illumination.
Figure 13 is In in the embodiment of the present invention 12Se3In zero-bias, 2200nm, (light intensity is about/Si vertical structure hetero-junctions
38.3mWcm-2) time response map under illumination.
Figure 14 is In in the embodiment of the present invention 22Se3The thickness of film characterizes.
Figure 15 is In in the embodiment of the present invention 22Se3The absorption map of film.
Figure 16 is In in present example 22Se3In zero-bias, 1550nm, (light intensity is about/Si vertical structure hetero-junctions
2.183mWcm-2) time response map under illumination.
Figure 17 is In in the embodiment of the present invention 32Se3The thickness of film characterizes.
Figure 18 is In in the embodiment of the present invention 32Se3The absorption map of film.
Figure 19 is In in present example 32Se3In zero-bias, 1550nm, (light intensity is about/Si vertical structure hetero-junctions
2.559mWcm-2) time response map under illumination.
Five, specific embodiment
The present invention is described in detail is based on In with reference to the accompanying drawing2Se3The near-infrared long wave photodetector of driving certainly of film
Preparation method, non-limiting examples are as follows.
Embodiment 1
Referring to Fig. 1, the present embodiment is to be covered with SiO with upper surface from near-infrared long wave photodetector is driven2Insulating layer 2
Planar silicon 1 be substrate, perform etching and expose planar silicon to the insulating layer 2 of middle section, form detector window；It is visiting
Survey sputtering sedimentation In on device window2Se3Film 3 constructs In2Se3/ Si hetero-junctions；It shifts above graphene 4 to hetero-junctions, graphite
Alkene 4 covers the insulating layer 2 and In not etched simultaneously2Se3Film 3, graphene is as transparent top electrode and In2Se3Film forms Europe
Nurse contact；The first metal film electrode 5 is made in the top of the graphene 4 contacted with insulating layer 2, ohm is formed with graphene and connects
Touching；The second metal film electrode 6 is brushed at the back side of planar silicon 1, forms Ohmic contact with silicon.
Specifically, In used in the present embodiment2Se3Film is obtained using magnetron sputtering method；Silicon base conduction type used is
N-shaped, resistivity are < 0.01 Ω cm；Insulating layer used is the SiO of 300nm2Insulating layer；Graphene is original with methane and hydrogen
Material is prepared by CVD method；First metal film electrode is the Ag electrode with a thickness of 50nm, and the second metal film electrode is In/Ga
Electrode.
Specific In2Se3Film the preparation method is as follows:
It the use of diameter is 6cm, with a thickness of the In/Se=2:3 ceramic post sintering target of 5mm, the distance of target to substrate is 5cm.
The background vacuum of sputtering chamber is 1.9 × 10-4Pa.Gas used in working is the argon gas of purity 99.9%, and gas flow is set
It is set to 20sccm.After the work such as heating substrate, gas washing, pre-sputtering, start sputter-deposited thin films, operating air pressure is
0.5Pa, sputtering power 80W, substrate heating temperature are 360 DEG C, and sputtering time is 4.5 minutes, successfully prepare In2Se3Film,
With a thickness of 74nm.
As shown in Fig. 2, the specific preparation process of the present embodiment from driving near-infrared long wave photodetector is as follows:
S1, surface is selected to have 300nm SiO2The N-shaped planar silicon of insulating layer is substrate, successively uses acetone, alcohol, deionization
After water ultrasonic cleaning, dry up spare.
S2, exposure mask protection is carried out using two sides of the adhesive tape to insulating layer, unprotected insulating layer is performed etching, is visited
Survey device window (0.15cm-2), used buffered oxide etch liquid is BOE etching liquid (HF:NH4F=1:6) 10mL, etching 5
Minute.
S3, in detector window according to above-mentioned magnetron sputtering In2Se3The condition of film, the In of sputtering sedimentation 74nm2Se3
Film.
S4, the spin coating PMMA film on copper substrate single-layer graphene, are put into CuSO later4It is carved in/HCl complex copper etching liquid
Eating away copper substrate, transfers graphene to device surface, using acetone remove PMMA, here graphene simultaneously cover insulating layer and
In2Se3Film.
S5, using electron beam deposition technique, in one metal film electrode of disposed thereon of the graphene contacted with insulating layer
(50nm Ag), gas pressure in vacuum is 4 × 10 when deposition-3Pa, evaporation rate are
S6, the back side of planar silicon is polished, brushes one layer of In/Ga conducting resinl, forming the second metal film electrode In/Ga electricity
Pole.
The present embodiment In2Se3The X ray diffracting spectrum of film is as shown in figure 3, significant diffraction at 27.5 ° and 44.6 °
Peak, due to six side defect wurtzite structure γ-In2Se3Crystal face (006) and (300), show stratiform γ-obtained
In2Se3The relatively strong c-axis preferred orientation of nano thin-film.
The present embodiment In2Se3The Raman Characterization of film is as shown in figure 4, the In deposited2Se3Nano thin-film~
150cm-1Place shows highest peak, with γ phase In2Se3The regional center mode of crystal is related, while respectively in~83,205 and
246cm-1There are three compared with weak peak for place's tool.
The present embodiment In2Se3The thickness of film is measured by step instrument, as shown in figure 5, thickness is about 74nm.
In in the present embodiment2Se3Film, Si substrate and In2Se3The absorption map of/Si hetero-junctions is as shown in fig. 6, from figure
It can be seen that In2Se3The absorption of film wide scope, making heterojunction device also has the absorption of wide scope, especially in near-infrared
Region, In2Se3The absorption of/Si hetero-junctions is significantly increased compared with Si substrate.
The present embodiment is 1mWcm in light intensity from driving near-infrared long wave photodetector-2, 808nm monochromatic light shine under, display
Apparent photovoltaic property out, as shown in fig. 7, open-circuit voltage is 0.222V, short circuit current is 26.5 μ A.
Current-voltage of the present embodiment from driving near-infrared long wave photodetector under zero-bias, 808nm difference light intensity
Characteristic curve is as shown in figure 8, show apparent light intensity dependence response characteristics to light, with the increase of luminous intensity, photovoltage and
Photoelectric current gradually increases, this can be explained by increasing the quantity of photocarrier down by force in high light.
Time response of the present embodiment from driving near-infrared long wave photodetector in the case where incident frequencies are the illumination of 3kHz
Map is as shown in Figure 9, it can be seen that device rise time and fall time are respectively 35.2 μ s and 114.8 μ s.
The spectral response of the present embodiment from driving near-infrared long wave photodetector is as shown in Figure 10, it can be seen that device exists
(200-1200nm) has significant photoresponse in wider spectral region.
The present embodiment is from driving near-infrared long wave photodetector in zero-bias, 0.702mWcm-2, 1300nm monochromatic light shine
Under, time response map is as shown in figure 11, and on-off ratio is about 6.79 × 103, responsiveness 47.39mAW-1, show that the device exists
Other than the absorption long wavelength threshold (~1100nm) of Si, still there is significant photoresponse, may be used as visiting from driving near-infrared long wave photoelectricity
Survey device.
The present embodiment is from driving near-infrared long wave photodetector in zero-bias, 1.756mWcm-2, 1550nm monochromatic light shine
Under, time response map is as shown in figure 12, and on-off ratio is about 92.2, responsiveness 1.45mAW-1。
The present embodiment is from driving near-infrared long wave photodetector in zero-bias, 38.3mWcm-2, 2200nm monochromatic light shine
Under, time response map is as shown in figure 13, and responsiveness is about 5.8 × 10-5mAW-1Although responsiveness is relatively at 2200nm
It is low, but the device still shows stable and reversible switch, discloses as driving near-infrared long wave photodetector certainly
Potentiality.
Embodiment 2
The present embodiment the difference is that only that the magnetron sputtering time is 1.5 minutes with embodiment 1.
The present embodiment In2Se3The thickness of film is measured by step instrument, and as shown in figure 14, thickness is about 21nm.
In in the present embodiment2Se3The absorption map of film is as shown in figure 15, it can be seen from the figure that in 300-2000nm model
In enclosing, which all has certain absorption.
The present embodiment is from driving near infrared photodetector in zero-bias, 2.183mWcm-2, 1550nm monochromatic light shine under, when
Between response map it is as shown in figure 16, the device is very sensitive to incident light, can be between highly conductive state and low conduction state
Reversible switching, and providing stable on-off ratio is about 1.14 × 102, responsiveness 1.455mAW-1。
Embodiment 3
The present embodiment the difference is that only that the magnetron sputtering time is 2.5 minutes with embodiment 1.
The present embodiment In2Se3The thickness of film is measured by step instrument, and as shown in figure 17, thickness is about 42nm.
In in the present embodiment2Se3The absorption map of film is as shown in figure 18, as can be seen from the figure in 300-2000nm model
In enclosing, which all has certain absorption.
The present embodiment is from driving near infrared photodetector in zero-bias, 2.559mWcm-2, 1550nm monochromatic light shine under, when
Between response map it is as shown in figure 19, the device is very sensitive to incident light, can be between highly conductive state and low conduction state
Reversible switching, and stable on-off ratio about 1.35 × 10 is provided2, responsiveness 1.47mAW-1。
The above is only exemplary embodiment of the present invention, are not intended to limit the invention, all in spirit of the invention
Any modifications, equivalent replacements, and improvements etc. with being done within principle, should all be included in the protection scope of the present invention.
Claims (9)
1. being based on In2Se3The driving near-infrared long wave photodetector certainly of/Si vertical structure hetero-junctions, it is characterised in that: use
Planar silicon (1) of the upper surface with insulating layer (2) is used as substrate；The insulating layer (2) of middle section is performed etching and exposed
Planar silicon forms detector window；In is deposited by magnetron sputtering on detector window2Se3Film (3) constructs In2Se3/
Si hetero-junctions；It shifts above graphene (4) to hetero-junctions, and the insulating layer (2) not etched with two sides partly overlaps, the graphite
Alkene is as transparent top electrode and In2Se3Film forms Ohmic contact；In graphene (4) disposed thereon contacted with insulating layer (2)
First metal film electrode (5) forms Ohmic contact with graphene；The second metallic film electricity is brushed at the back side of planar silicon (1)
Pole (6) forms Ohmic contact with planar silicon.
2. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: the planar silicon (1)
Conduction type is N-shaped, and resistivity is < 0.01 Ω cm.
3. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: the insulating layer (2)
For SiO2、Si3N4、Ta2O5、HfO2Or Al2O3Layer, or be insulating tape；The resistivity of the insulating layer is greater than 1 × 103Ω·
Cm, with a thickness of 100-500nm.
4. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: the detector window
It is formed by exposure mask protection and lithographic technique, minimum feature size is 5 μm, the most narrow spacing of the first metal film electrode of Edge Distance
From being 1 μm.
5. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: the In2Se3Film
(3) it is γ phase, is obtained by radio-frequency magnetron sputter method, preparation condition are as follows: background vacuum is that air pressure is lower than 1.9 × 10-4Pa, work
Make the argon gas that gas is not less than 99.9% for purity, gas flow 20sccm, operating air pressure 0.5Pa, sputtering power is
80W, silicon to 360 DEG C, target between sample substrate at a distance from be 5cm, sputtering time is 1.5-4.5 minutes.
6. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: the graphene (4)
For the single or double layer graphene obtained by chemical vapour deposition technique, mobility 1000-15000cm2V-1s-1, pass through
The wet process transfer techniques of PMMA auxiliary, are transferred to detector window overlying regions, as transparent top electrode.
7. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: first metal foil
Membrane electrode (5) is Au electrode, Ag electrode, Ti/Au combination electrode, Cr/Au combination electrode, Ni/Au combination electrode or Pt electrode；
The Au electrode, Ag electrode, Pt electrode with a thickness of 30-100nm；
The Ti/Au combination electrode, Cr/Au combination electrode, Ni/Au combination electrode are respectively in Ti, Cr, Ni of thickness 5-10nm
Continue the Au electrode of deposition 30-100nm on electrode.
8. according to claim 1 from driving near-infrared long wave photodetector, it is characterised in that: second metal foil
Membrane electrode (6) is In/Ga alloy electrode or Ag electrode, is formed by way of brushing or vacuum evaporation, with a thickness of 30-100nm.
9. special from the production method for driving near-infrared long wave photodetector described in a kind of any one of claim 1~8
Sign is, includes the following steps:
S1, it after the planar silicon with insulating layer successively to be used to acetone, alcohol, deionized water ultrasonic cleaning, dries up spare；
S2, pass through adhesive tape exposure mask and lithographic technique, remove and expose planar silicon to the insulating layer etching of specific position in substrate,
Form detector window；
S3, on the detector window by way of magnetron sputtering plating one layer of densification In of sputtering sedimentation2Se3Film, film
It is completely covered and without departing from the detector window, sputtering condition are as follows: background vacuum is that air pressure is lower than 1.9 × 10-4Pa, work
Argon gas of the gas for purity not less than 99.9%, gas flow 20sccm, operating air pressure 0.5Pa, sputtering power 80W,
Silicon to 360 DEG C, target between sample substrate at a distance from be 5cm, sputtering time is 1.5-4.5 minutes；
S4, the area that the graphene on the copper foil of chemical vapour deposition technique preparation is cut into particular size, are greater than detector window
Open area and be less than area of base；In graphene front spin coating PMMA, 85 DEG C of heating are put into after five minutes in copper etching liquid, make it
It faces up and floats on etching liquid；After copper foil is etched completely, SiO is transferred graphene to using wet process transfer2And In2Se3
Then the top of film is heated 30 minutes for 85 DEG C, place into acetone soln and impregnate removal surface PMMA, remaining graphene conduct
Transparent top electrode；
S5, using evaporating deposition technique or brush conducting resinl mode, first is made above the insulating layer for being covered with graphene
Metal film electrode；
S6, one layer of back side polishing to planar silicon, brushing conducting resinl, form the second metal film electrode, that is, are based on
In2Se3The driving near-infrared long wave photodetector certainly of/Si vertical structure hetero-junctions.
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Application publication date: 20190927 |