CN109411562A - Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector and preparation method thereof - Google Patents
Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector and preparation method thereof Download PDFInfo
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 268
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 132
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 37
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 11
- 230000004043 responsiveness Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 72
- 239000010410 layer Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006701 autoxidation reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detectors and preparation method thereof, it is using n-type germanium substrate as the base area of photodetector, in the lower surface of n-type germanium substrate, n-type germanium basal electrode, upper surface portion region overlay insulating layer are set；Two selenizing platinum contact electrode is covered on the insulating layer, two selenizing platinum films are laid on two selenizing platinum contact electrode, two selenizing platinum film a part and two selenizing platinum contact electrode form Ohmic contact, and the part that remainder and n-type germanium substrate surface do not cover insulating layer forms hetero-junctions.Photodetector simple process of the invention, low in cost, responsiveness is high, fast response time.
Description
Technical field
The invention belongs to photodetector technical fields, and in particular to a kind of two selenizing platinum films/n-type silicon-germanium heterojunction is close
Infrared detector and preparation method thereof.
Background technique
In recent years, with the continuous development of the information society, near infrared light detector is in military and national economy many necks
Domain all has a wide range of applications.For example, near infrared light detector is in aerospace, night vision and the earth mapping, boat in military field
Sea, Weapon detecting etc. all play an important role；In national economy field, near infrared light detector fiber optic communication,
Near infrared imaging, industrial process monitoring, Inspection and maintenance and hot-fluid research and development etc. also have broad application prospects.
Currently, commercialized near infrared light detector mostly uses III-V semiconductor compound as light sensitive material greatly.
By the development of long period, the near infrared light detector based on such material has been achieved for ideal photoelectric respone
Energy.But the further development of the near infrared light detector based on this kind of material is seriously constrained there are still a series of problem
With extensive use.For example, the growth of III-V semiconductor compound is needed using expensive instrument and equipment, and need with
The stringent Lattice Matching of substrate causes preparation cost high；In addition, such compound that there is also thermo-mechanical performances is poor,
The disadvantages of being difficult to the equally distributed compound of prepared composition, can not be with the silicon base CMOS process compatible of existing maturation.Another kind reason
The near infrared light detection sensitive material thought is silicon/silicon-germanium heterojunction.Although silicon/silicon-germanium heterojunction be easy to silicon base CMOS process compatible,
But it is weaker to the absorbability of near infrared light compared to III-V semiconductor compound, cause device performance to be difficult to further
It is promoted；In addition, the preparation based on silicon/silicon-germanium heterojunction near infrared light detector generally requires complicated cumbersome technique, lead to device
Part high expensive.These problems are filled with development and extensive use based on silicon/silicon-germanium heterojunction near infrared light detector
Challenge.
Summary of the invention
The present invention be in order to avoid above-mentioned existing deficiencies in the technology, provide a kind of device technology it is simple, at
This cheap two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector is visited to effectively improve near infrared light
The performances such as current on/off ratio, the response speed of device are surveyed, and reduces device preparation cost and simplifies preparation process.
The present invention adopts the following technical scheme that in order to solve the technical problem
Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector of the invention, it is characterized in that: with n-type germanium substrate
As the base area of the photodetector, n-type germanium basal electrode is set in the lower surface of the n-type germanium substrate；In the n-
The upper surface of type germanium substrate covers insulating layer, and the area of the insulating layer is 1/5 to the 2/3 of the n-type germanium area of base, institute
State boundary of the boundary without departing from the n-type germanium substrate of insulating layer；Two selenizing platinum contact electrode is covered on the insulating layer,
Boundary of the boundary of the two selenizings platinum contact electrode without departing from the insulating layer；It is laid on two selenizings platinum contact electrode
Two selenizing platinum films, described two selenizings platinum film a part are contacted with two selenizing platinum contact electrode, remainder and n-type germanium base
Bottom upper surface does not cover the part contact of insulating layer, the side of the boundary of the two selenizings platinum film without departing from the n-type germanium substrate
Boundary；The two selenizings platinum film and two selenizing platinum contact electrode are Ohmic contact, the two selenizings platinum film and n-type germanium substrate
Form hetero-junctions.
Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector of the invention, feature are lain also in: the insulating layer
Using silica, silicon nitride, aluminium oxide or hafnium oxide as material, the insulating layer with a thickness of 30-300nm.
The n-type germanium basal electrode is In-Ga alloy electrode or Ag electrode, the thickness of the n-type germanium basal electrode
For 50-500nm.
The two selenizings platinum contact electrode is Au electrode, Pt electrode or Pd electrode, the thickness of the two selenizings platinum contact electrode
Degree is 30-300nm.
The N-shaped germanium substrate, which uses, is not more than 0.004 Ω/cm n-type heavy doping germanium with a thickness of 100-600 μm, resistivity
Piece.
The two selenizings platinum film with a thickness of 10-30nm or so.
The preparation method of two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector of the invention, feature sign are
It carries out as follows:
(1) n-type heavy doping germanium wafer is placed in the hydrofluoric acid solution or BOE etching liquid that mass concentration is 5%-10%
Etching 5-10 minutes removes the natural oxidizing layer on n-type heavy doping germanium wafer surface, is washed and dried after taking-up, obtain n-type
Germanium substrate；The BOE etching liquid is by 20g NH4F and 7ml mass concentration not less than 40% hydrofluoric acid be added to 30ml go from
The mixed liquor formed in sub- water；
(2) use magnetron sputtering coating method in the upper surface area coverage of n-type germanium substrate for the n-type germanium basal surface
The insulating layer of long-pending 1/5 to 2/3；
(3) two selenizing platinum contact electrode, the two selenizings platinum contact are covered using electron beam film plating process on the insulating layer
Boundary of the boundary of electrode without departing from the insulating layer；
(4) two selenizing platinum films, described two selenizings platinum film a part and two selenium are laid on two selenizing platinum contact electrode
Change platinum contact electrode contact, remainder is contacted with the part that n-type germanium upper surface of substrate does not cover insulating layer, and described two
Boundary of the boundary of selenizing platinum film without departing from the n-type germanium substrate；
(5) using smearing or electron beam film plating process in the lower surface of n-type germanium substrate setting n-type germanium substrate electricity
Pole obtains two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector.
Compared with the prior art, the beneficial effects of the present invention are embodied in:
1, low in cost and work can be used in two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector in the present invention
The simple method preparation of skill, avoids using expensive instrument and equipment and complicated cumbersome preparation process, significantly reduces
Device preparation cost；
2, two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector in the present invention sufficiently combines germanium to close red
It the advantages that high-absorbility of outer light and high absorption coefficient of light of two selenizing platinum films and high conductivity, can be promoted to incident near-infrared
The absorption efficiency of light and the collection efficiency of photo-generated carrier；Detector rings the near infrared light that wave-length coverage is 900-1600nm
Should be very sensitive, and the responsiveness of detector is high, fast response time.
3, two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector in the present invention can normal work under no-voltage
Make, there is no need to consume external energy, power consumption can be effectively reduced.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector of the invention, figure acceptance of the bid
Number: 1 is n-type germanium basal electrode；2 be n-type germanium substrate；3 be insulating layer；4 contact electrode for two selenizing platinum；5 be two selenizing platinum
Film.
Fig. 2 is two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector in the embodiment of the present invention 1 respectively unglazed
According to be 1550nm with wavelength, intensity 24.3mW/cm2Illumination under current-voltage characteristic curve；
Fig. 3 is that two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector is electric in odd-job work in the embodiment of the present invention 1
Pressure, wavelength 1550nm, intensity 24.3mW/cm2Illumination under time response curve；
Fig. 4 is two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector in the embodiment of the present invention 2 respectively unglazed
According to be 1550nm with wavelength, intensity 24.3mW/cm2Illumination under current-voltage characteristic curve；
Fig. 5 is that two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector is electric in odd-job work in the embodiment of the present invention 2
Pressure, wavelength 1550nm, intensity 24.3mW/cm2Illumination under time response curve；
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below with reference to embodiment to this hair
Bright specific embodiment is described in detail.The following contents is only to design example of the invention and explanation, institute
Belong to those skilled in the art to make various modifications or additions to the described embodiments or using similar
Mode substitutes, and as long as it does not deviate from the concept of invention or beyond the scope defined by this claim, should belong to the present invention
Protection scope.
Embodiment 1
As shown in Figure 1, two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector structure in the present embodiment are as follows:
Using n-type germanium substrate 2 as the base area of photodetector, n-type germanium basal electrode 1 is set in the lower surface of n-type germanium substrate 2；?
The upper surface of n-type germanium substrate 2 covers insulating layer 3, and the area of insulating layer 3 is the 4/5 of 2 area of n-type germanium substrate, insulating layer 3
Boundary of the boundary without departing from n-type germanium substrate 2；Two selenizing platinum contact electrode 4 is covered on the insulating layer 3, and two selenizing platinum contact electrode
Boundary of 4 boundary without departing from insulating layer 3；Two selenizing platinum films 5 are laid on two selenizing platinum contact electrode 4, two selenizing platinum are thin
5 a part of film is contacted with two selenizing platinum contact electrode 4, and remainder does not cover the portion of insulating layer 3 with 2 upper surface of n-type germanium substrate
Tap touching, the boundary of the boundaries of two selenizing platinum films 5 without departing from n-type germanium substrate 2；Two selenizing platinum films 5 are contacted with two selenizing platinum
Electrode 4 is Ohmic contact, and two selenizing platinum films 5 form hetero-junctions with n-type germanium substrate 2.
Specific: n-type germanium basal electrode 1 is the In-Ga alloy electrode with a thickness of 400nm.N-type germanium substrate 2 is using thick
Degree is 400 μm, resistivity is 0.003 Ω/cm n-type heavy doping germanium wafer.Insulating layer 3 is the hafnium oxide with a thickness of 300nm.Two
It is the Au electrode with a thickness of 50nm that selenizing platinum, which contacts electrode 4,.Two selenizing platinum films 5 are with a thickness of 30nm.
Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector preparation method is as follows in the present embodiment
It carries out:
It (1) is 0.5cm × 0.5cm by area, resistivity is 0.003 Ω/cm, with a thickness of 400 μm of n-type heavy doping germanium
Piece is placed in the hydrofluoric acid solution that mass concentration is 5% and etches 5 minutes, removes the autoxidation on n-type heavy doping germanium wafer surface
Layer, is respectively cleaned by ultrasonic 10 minutes, and with being dried with nitrogen with acetone, alcohol, deionized water respectively after taking-up, obtains n-type germanium substrate
2。
(2) the 1/5 of n-type germanium substrate 2 is covered with mask, using magnetron sputtering coating method, with purity for 99.9%
Hafnium oxide target be material, vacuum degree be 1 × 10-3Pa plates 300nm oxygen in the part that n-type germanium substrate 2 is not masked version covering
Change hafnium as insulating layer 3；
(3) electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa is hereinafter, vapor deposition area is small on the insulating layer 3
Electrode 4 is contacted as two selenizing platinum in 3 area of insulating layer, with a thickness of the Gr/Au electrode of 50nm；
(4) it is contacted in two selenizing platinum and is laid with two selenizing platinum films of the area less than 2 area of n-type germanium substrate on electrode 4, two
5 a part of selenizing platinum film is contacted with two selenizing platinum contact electrode 4, and remainder and 2 upper surface of n-type germanium substrate do not cover absolutely
The part of edge layer 3 contacts.
(5) using smear method be completed (2), (3), (4) three steps n-type germanium substrate 2 lower surface prepare In-
Ga alloy, as n-type germanium basal electrode 1.
Two selenizing platinum films 5 are prepared by hot assist conversion method, the specific steps are as follows:
A. electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa in clean oxidation silicon base hereinafter, steam
Plate the platinum film with a thickness of 5nm.
B., the oxidation silicon base of surface covering platinum film is put into the right warm area of double temperature-area tubular furnaces, 0.1g purity will be filled
The left warm area of double temperature-area tubular furnaces is put into for the porcelain boat of 99.99% selenium powder；Being passed through the argon gas that flow is 50sccm is protection gas
Body, by left temperature-raising region temperature raising to 220 DEG C, by right temperature-raising region temperature raising to 400 DEG C, keeping pressure in tube furnace is 260Pa；Remain above-mentioned anti-
After answering condition 1h, the heating system of double temperature-area tubular furnaces is closed, continues to be passed through the argon gas protective gas that flow is 50sccm, etc.
Porcelain boat and oxidation silicon base are taken out when double temperature-area tubular furnaces are cooled to room temperature, oxidation silicon substrate surface growth there are two selenizing platinum thin
Film, two selenizing platinum films are with a thickness of 30nm.
C. on surface, growth has the upper surface of the oxidation silicon base of two selenizing platinum films dense with revolving speed 3000rpm spin quality
Then oxidation silicon base is put into NaOH solution by the PMMA that degree is 5%, shell completely with oxidation silicon base to two selenizing platinum films
From later, two selenizing platinum films are transferred in deionized water and are cleaned, obtains two selenizing platinum films.
Based on two selenizings platinum film/n-type silicon-germanium heterojunction near infrared light detector manufactured in the present embodiment under dark and wave
A length of 1550nm, intensity 24.3mW/cm2Illumination under current-voltage characteristic curve as shown in Fig. 2, as seen from the figure this
The near infrared light detector of embodiment has apparent photoelectric response characteristic.Device under zero operating voltage, wavelength 1550nm,
Intensity is 24.3mW/cm2Illumination under time response curve as shown in figure 3, as can be seen from the figure the present embodiment it is close red
Outer optical detector is very sensitive to detected light, and on-off ratio reaches 820, and has ultrafast response speed；Furthermore two prepared
Selenizing platinum film/n-type silicon-germanium heterojunction near infrared light detector can work normally under zero operating voltage, can effectively reduce device
Part power consumption.
Embodiment 2
As shown in Figure 1, two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector structure in the present embodiment are as follows:
Using n-type germanium substrate 2 as the base area of photodetector, n-type germanium basal electrode 1 is set in the lower surface of n-type germanium substrate 2；?
The upper surface of n-type germanium substrate 2 covers insulating layer 3, and the area of insulating layer 3 is the 1/2 of 2 area of n-type germanium substrate, insulating layer 3
Boundary of the boundary without departing from n-type germanium substrate 2；Two selenizing platinum contact electrode 4 is covered on the insulating layer 3, and two selenizing platinum contact electrode
Boundary of 4 boundary without departing from insulating layer 3；Two selenizing platinum films 5 are laid on two selenizing platinum contact electrode 4, two selenizing platinum are thin
5 a part of film is contacted with two selenizing platinum contact electrode 4, and remainder does not cover the portion of insulating layer 3 with 2 upper surface of n-type germanium substrate
Tap touching, the boundary of the boundaries of two selenizing platinum films 5 without departing from n-type germanium substrate 2；Two selenizing platinum films 5 are contacted with two selenizing platinum
Electrode 4 is Ohmic contact, and two selenizing platinum films 5 form hetero-junctions with n-type germanium substrate 2.
Specific: n-type germanium basal electrode 1 is the Ag electrode with a thickness of 80nm.N-type germanium substrate 2 is using with a thickness of 300 μ
M, resistivity is 0.003 Ω/cm n-type heavy doping germanium wafer.Insulating layer 3 is the silicon nitride with a thickness of 50nm.The contact of two selenizing platinum
Electrode 4 is the Pt electrode with a thickness of 250nm.Two selenizing platinum films 5 are with a thickness of 10nm.
Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector preparation method is as follows in the present embodiment
It carries out:
It (1) is 0.5cm × 0.5cm by area, resistivity is 0.003 Ω/cm, with a thickness of 300 μm of n-type heavy doping germanium
Piece is placed in the hydrofluoric acid solution that mass concentration is 5% and etches 5 minutes, removes the autoxidation on n-type heavy doping germanium wafer surface
Layer, is respectively cleaned by ultrasonic 10 minutes, and with being dried with nitrogen with acetone, alcohol, deionized water respectively after taking-up, obtains n-type germanium substrate
2。
(2) the 1/2 of n-type germanium substrate 2 is covered with mask, using magnetron sputtering coating method, with purity for 99.9%
Silicon nitride target be material, vacuum degree be 4 × 10-3Pa is not masked the part plating 50nm nitridation of version covering in n-type germanium substrate 2
Silicon is as insulating layer 3；
(3) electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa is hereinafter, vapor deposition area is small on the insulating layer 3
Electrode 4 is contacted as two selenizing platinum in 3 area of insulating layer, with a thickness of the Pt electrode of 250nm；
(4) it is contacted in two selenizing platinum and is laid with two selenizing platinum films of the area less than 2 area of n-type germanium substrate on electrode 4, two
5 a part of selenizing platinum film is contacted with two selenizing platinum contact electrode 4, and remainder and 2 upper surface of n-type germanium substrate do not cover absolutely
The part of edge layer 3 contacts.
(5) electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa is hereinafter, being completed (2), (3), (4) three
The Ag electrode that the lower surface of the n-type germanium substrate 2 of step prepares with a thickness of 80nm, as n-type germanium basal electrode 1.
Two selenizing platinum films 5 are prepared by hot assist conversion method, the specific steps are as follows:
A. electron beam film plating process is used, is 6.7 × 10 in vacuum degree-3Pa in clean oxidation silicon base hereinafter, steam
Plate the platinum film with a thickness of 2.5nm.
B., the oxidation silicon base of surface covering platinum film is put into the right warm area of double temperature-area tubular furnaces, 0.2g purity will be filled
The left warm area of double temperature-area tubular furnaces is put into for the porcelain boat of 99.99% selenium powder；Being passed through the argon gas that flow is 50sccm is protection gas
Body, by left temperature-raising region temperature raising to 220 DEG C, by right temperature-raising region temperature raising to 400 DEG C, keeping pressure in tube furnace is 260Pa；Remain above-mentioned anti-
After answering condition 1h, the heating system of double temperature-area tubular furnaces is closed, continues to be passed through the argon gas protective gas that flow is 50sccm, etc.
Porcelain boat and oxidation silicon base are taken out when double temperature-area tubular furnaces are cooled to room temperature, oxidation silicon substrate surface growth there are two selenizing platinum thin
Film, two selenizing platinum films are with a thickness of 10nm.
C. on surface, growth has the upper surface of the oxidation silicon base of two selenizing platinum films dense with revolving speed 3000rpm spin quality
Then oxidation silicon base is put into NaOH solution by the PMMA that degree is 5%, shell completely with oxidation silicon base to two selenizing platinum films
From later, two selenizing platinum films are transferred in deionized water and are cleaned, obtains two selenizing palladium membranes.
Based on two selenizings platinum film/n-type silicon-germanium heterojunction near infrared light detector manufactured in the present embodiment under dark and wave
A length of 1550nm, intensity 24.3mW/cm2Illumination under current-voltage characteristic curve as shown in figure 4, as seen from the figure this
The near infrared light detector of embodiment has apparent photoelectric response characteristic.Device is under zero operating voltage, wavelength 1550nm,
Intensity is 24.3mW/cm2Illumination under time response curve as shown in figure 5, as can be seen from the figure the present embodiment it is close red
Outer optical detector is very sensitive to detected light, and current on/off ratio reaches 1000, and has ultrafast response speed；Furthermore it prepares
Two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector can work normally under zero operating voltage, can effectively drop
Low device power consumption.
The above is only exemplary embodiment of the present invention, are not intended to limit the invention, all in spirit of the invention
With any modifications, equivalent replacements, and improvements made within principle etc., should all be included in the protection scope of the present invention.
Claims (7)
1. two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector, it is characterised in that: using n-type germanium substrate (2) as
N-type germanium basal electrode (1) is arranged in the lower surface of the n-type germanium substrate (2) in the base area of the photodetector；Described
The upper surface of n-type germanium substrate (2) covers insulating layer (3), and the area of the insulating layer (3) is n-type germanium substrate (2) area
1/5 to 2/3, the boundary of the boundary of the insulating layer (3) without departing from the n-type germanium substrate (2)；On the insulating layer (3)
Two selenizing platinum contact electrode (4) is covered, the two selenizings platinum contacts the side of the boundary without departing from the insulating layer (3) of electrode (4)
Boundary；Be laid with two selenizing platinum films (5) in two selenizings platinum contact electrode (4), described two selenizings platinum film (5) a part with
Two selenizing platinum contact electrode (4) contact, and the part that remainder does not cover insulating layer (3) with n-type germanium substrate (2) upper surface connects
Touching, the boundary of the boundary of the two selenizings platinum film (5) without departing from the n-type germanium substrate (2)；The two selenizings platinum film (5)
It is Ohmic contact with two selenizing platinum contact electrode (4), the two selenizings platinum film (5) and n-type germanium substrate (2) form hetero-junctions.
2. two selenizings platinum film according to claim 1/n-type silicon-germanium heterojunction near infrared light detector, it is characterised in that:
The insulating layer (3) using silica, silicon nitride, aluminium oxide or hafnium oxide as material, the insulating layer (3) with a thickness of
30-300nm。
3. two selenizings platinum film according to claim 1/n-type silicon-germanium heterojunction near infrared light detector, it is characterised in that:
The n-type germanium basal electrode (1) be In-Ga alloy electrode or Ag electrode, the n-type germanium basal electrode (1) with a thickness of
50-500nm。
4. two selenizings platinum film according to claim 1/n-type silicon-germanium heterojunction near infrared light detector, it is characterised in that:
Two selenizings platinum contact electrode (4) is Au electrode, Pt electrode or Pd electrode, the thickness of two selenizings platinum contact electrode (4)
For 30-300nm.
5. two selenizings platinum film according to claim 1/n-type silicon-germanium heterojunction near infrared light detector, it is characterised in that:
The N-shaped germanium substrate (2) is not more than 0.004 Ω/cm n-type heavy doping germanium wafer using with a thickness of 100-600 μm, resistivity.
6. two selenizings platinum film according to claim 1/n-type silicon-germanium heterojunction near infrared light detector, it is characterised in that:
The two selenizings platinum film (5) with a thickness of 10-30nm or so.
7. two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector described in a kind of any one of claim 1~6
Preparation method, it is characterised in that as follows carry out:
(1) n-type heavy doping germanium wafer is placed in the hydrofluoric acid solution or BOE etching liquid that mass concentration is 5%-10% and is etched
5-10 minutes, the natural oxidizing layer on n-type heavy doping germanium wafer surface is removed, is washed and dried after taking-up, obtains n-type germanium base
Bottom；
(2) use magnetron sputtering coating method in the upper surface area coverage of n-type germanium substrate for the n-type germanium area of base
1/5 to 2/3 insulating layer；
(3) two selenizing platinum contact electrode is covered using electron beam film plating process on the insulating layer, the two selenizings platinum contacts electrode
Boundary without departing from the insulating layer boundary；
(4) two selenizing platinum films, described two selenizings platinum film a part and two selenizing platinum are laid on two selenizing platinum contact electrode
Electrode contact is contacted, remainder is contacted with the part that n-type germanium upper surface of substrate does not cover insulating layer, two selenizing
Boundary of the boundary of platinum film without departing from the n-type germanium substrate；
(5) n-type germanium basal electrode is arranged in the lower surface of the n-type germanium substrate using smearing or electron beam film plating process, i.e.,
Obtain two selenizing platinum films/n-type silicon-germanium heterojunction near infrared light detector.
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| CN111048621A (en) * | 2020-01-13 | 2020-04-21 | 重庆理工大学 | Photoelectric detector based on graphene/platinum diselenide/silicon composite heterojunction and preparation method thereof |
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