CN206282864U - A kind of indium antimonide terahertz detector - Google Patents
A kind of indium antimonide terahertz detector Download PDFInfo
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- CN206282864U CN206282864U CN201621276431.1U CN201621276431U CN206282864U CN 206282864 U CN206282864 U CN 206282864U CN 201621276431 U CN201621276431 U CN 201621276431U CN 206282864 U CN206282864 U CN 206282864U
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- indium antimonide
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Abstract
This patent discloses a kind of indium antimonide terahertz detector, the gold-plated dielectric layer of indium antimonide detector and the back side that the detector is bonded by High Resistivity Si mirror central lower, the switching sheet metal of the side bonds of substrate two, and device base composition.Preparation method includes：Single-sided polishing indium antimonide materials are bonded in alumina substrate, it is thinning to obtain indium antimonide thin layer；Using CVD SiO is grown in thin layer surfacexPassivating film；Sensitive unit is made by etching technics, device is adhered to Gui Jing centers by the gold-plated making coupled antenna of photoetching using epoxy glue；The gold-plated dielectric layer in the back side, electric-field intensity at the sensitive unit of enhancing are set on device；Realize that switching sheet metal and device pin are electrically connected using conductive silicone grease, using resin sheet realize base to silicon mirror and the mechanical support of device.According to the terahertz detector compact conformation that methods described makes, response range can cover 0.04 2.5THz, the highly sensitive detection to THz wave can be realized under room temperature and appropriate cryogenic conditions.
Description
Technical field
This patent is related to a kind of preparation method of terahertz detector, in particular, is related to one kind to be lured based on electromagnetic wave
Lead the indium antimonide terahertz detector of potential well effect.
Background technology
Terahertz (Terahertz/THz) ripple refers to electromagnetism of the frequency in the range of 0.1-10THz (30-3000 μm of wavelength)
Ripple, with characteristics such as low energy, coherence, broadband property and penetrability.Because these peculiar properties, THz wave is in communication, day
The fields such as text, medical imaging, Non-Destructive Testing and security have a wide range of applications potentiality, and domestic and international research is had become in recent years
Focus [1-3].One of important research content of Terahertz Technology development is terahertz detection technology, development effort sensitivity is high,
The rational terahertz detector of easy to use, cost, will be in biomedical and chemistry, environmental monitoring, astronomy and remote sensing, communication
The fields such as technology, safety inspection play huge effectiveness, with great application value [4-6].
Indium antimonide materials are a kind of typical low-gap semiconductor materials, and nearly recent decades people have carried out such material should
For the research work of terahertz detection.Using InSb materials thermoelectronic effect at low temperature, people have made liquid helium refrigeration
InSb thermoelectron Bolometer, operating temperature is that, less than 4.2K, response wave band is f<1.5THz, NEP are better than 10-13W/Hz0.5
[7].The existing commercialization model of the liquid helium refrigeration mode terahertz detector of the InSb based on thermoelectronic effect, but these devices will
Worked under liquid helium temperature or lower temperature, be difficult actual extensive use.Since 2013, seminar where applicant develops
Metal-semiconductor-metal (MSM) structure novel high sensitivity room temperature terahertz detector [8-10] based on mercury cadmium telluride,
And a kind of explanation of novelty is proposed in theory.Sizov et al. (2015) experimentally also reports MSM structure mercury cadmium telluride devices
Old plant [11] of the part to 0.14THz signals.Seminar is by building suitable MSM structures, it was observed that mercury cadmium telluride material
Expect the room temperature photoconduction phenomenon of (MCT) to THz wave, and potential well (EIW) trapped carrier is induced based on terahertz electromagnetic radiation
Physical model to detection mechanism be explained.New terahertz detector based on mercury cadmium telluride realizes preferable property
Can, likewise, III-V low-gap semiconductor indium antimonide materials are also the preferable selection for preparing new terahertz detection device.
Indium antimonide materials are a kind of III-V low-gap semiconductors of function admirable, with electronics saturation drift velocity it is big,
Mobility is high, and auger coefficient it is smaller the advantages of [12]；Compared to mercury cadmium telluride, the wave-number range of indium antimonide materials phonon absorption
It is smaller.Document shows that indium antimonide materials are in 4.2-6THz (140-200cm-1) there is phonon absorption peak in band limits；It is being less than
140cm-1Without phonon absworption peak in the range of (wavelength is more than 70 μm), and based on free-carrier Absorption, this causes that indium antimonide is visited
Device is surveyed to be possibly realized [13] in the relatively broadband operated within range less than 4THz.
The indium antimonide detector that this patent is related to, is capable of achieving the wide-band response to 0.04THz-2.5THz, and room temperature
With the high speed under appropriate cryogenic conditions, highly sensitive detection.0.34THz and 0.5THz are frequencies more important in two applications
Point, plays an important role [14-16] at aspects such as military affairs, communication, scientific researches.Therefore, this patent will be appropriate by setting
Bottom reflecting medium layer, improve the response performance of the Frequency point such as 0.34THz, 0.5THz.
Bibliography referred to above is as follows：
[1]Bowlan,P.,et al.,Terahertz radiative coupling and damping in
multilayer graphene.New J.Phys.16(2014)013027.
[2]Sizov,F.and A.Rogalski,THz detectors.Prog.Quant.Electron.,2010.34
(5):p.278-347.
[3]Tonouchi,M.,Cutting-edge terahertz technology.Nature Photon.,
2007.1(2):p.97-105.
[4]Tang,L.,et al.,Nanometre-scale germanium photodetector enhanced by
a near-infrared dipole antenna.Nature Photon.,2008.2(4):p.226-229.
[5]Rogalski,A.,J.Antoszewski,and L.Faraone,Third-generation infrared
photodetector arrays.J.Appl.Phys.,2009.105(9)091101.
[6]Horiuchi,N.,Terahertz Technology Endless Applications.Nature
Photon.,2010.4(3):p.140-140.
[7]Padman,R.,et al.,A Dual-Polarization InSb Receiver for 461/492
GHz.Int.J.Infrared Milli.,1992.13(10):p.1487-1513.
[8]Z.M.Huang,J.C.Tong,et al.,Room-Temperature Photoconductivity Far
Below the Semiconductor Bandgap,Adv.Mater.,2014,26(38):6594-6598.
[9]Zhiming Huang,Wei Zhou,et al.,Directly tailoring photon-electron
coupling for sensitive photoconductance,Sci.Rep.,2016,6,22938.
[10]Zhiming Huang,Wei Zhou,et al.,Extreme Sensitivity of Room-
Temperature Photoelectric Effect for Terahertz Detection,Adv.Mater.,2016,28
(1),112-117.
[11]F.Sizov,et al.,Two-color detector:Mercury-cadmium-telluride as a
terahertz and infrared detector,Appl.Phys.Lett.,2015,106(8):814-3526.
[12]Levinshtein,et al.,Handbook series on semiconductor parameters,
v.2:ternary and quaternary III-V compounds.1996:Singapore:World Scientific.
[13]Palik,E.D.,Handbook of Optical constants of Solids.Academic,1985.
[14]J.Li,et al.,Low-noise 0.5 THz all-NbN superconductor-insulator-
supercon-ductor mixer for submillimeter wave astronomy,Appl.Phys.Lett.,2008,
92(22):222504.
[15]O.Mitrofanov,et al.,Collection-mode near-field imaging with 0.5-
THz pulses,IEEE J.Sel.Top.Quantum Electron.,2001,7(4):600.
[16]C.Wang,et al.,0.34-THz Wireless Link Based on High-Order
Modulation for Future Wireless Local Area Network Applications,Ieee T.THz
Sci.Techn.,2014,4(1):75.
The content of the invention：
The purpose of this patent is to disclose a kind of structure of indium antimonide terahertz detector, solves thermoelectronic effect detector
Need profound hypothermia to freeze and the slow problem of thermal detector response speed, realization high speed, height under room temperature or appropriate cryogenic conditions can be met
The application demand of sensitivity terahertz detection.
The structure of the indium antimonide terahertz detector of this patent is described as follows：Fig. 1 and Fig. 2 are respectively this patent detector device
Part structure chart and partial enlarged drawing (side-looking), Fig. 3 (a) and Fig. 3 (b) are this patent detector device junction composition (vertical view).As schemed
1st, shown in Fig. 3, InSb terahertz detector device architectures include：High Resistivity Si hemispherical mirror 1, alumina substrate 2, epoxide-resin glue
3, metal switching piece 4, conductive silicone grease 5, device base 6, antenna electrode 7, reflecting medium layer 8, gold thread 9, the sensitive unit of InSb detections
10, surface passivation film layer 11, chromium gold reflecting layer 12, resin pad 13.Device architecture is described in detail below：High Resistivity Si hemispherical mirror
1 central lower is followed successively by epoxide-resin glue 3 and substrate 2, and its both sides is pasted with metal switching piece 4, in the lower section at the center of substrate 2,
It is followed successively by the sensitive unit 10 of indium antimonide, surface passivation film layer 11, reflecting medium layer 8, chromium gold metal layer 12.In the surface-sensitive of substrate 2
First 10 left and right sides, making has antenna electrode 7, is connected with sensitive first 10 both sides of indium antimonide respectively, and antenna electrode 7 passes through gold thread 9
It is connected with both sides metals switching piece 4, the lower section of metal switching piece 4 is connected by conductive silicone grease 5 with the pin of device base 6, on base 6
The resin pad 13 of side's bonding realizes the mechanical support to High Resistivity Si hemispherical mirror 1.Such as Fig. 1, hemispherical mirror 1 is big using resistivity
It is processed into the HIGH-PURITY SILICON of 10000 Ω cm, diameter 12mm, development length 1.74mm；Substrate 2 is aluminum oxide white stone piece,
Thickness is 0.25mm, and size is 1.4mm × 4.2mm；Sensitive first 8-11 μm of 10 thickness of indium antimonide, electrode spacing is 15-90 μm, table
Face SiOxPassivation film thickness 700nm；Antenna electrode 7 is the butterfly electrode of overall length 0.45-0.90mm, or overall length 0.60-0.90mm
Log spiral antenna, Cr layers of 30nm, Au layers of 400nm；Reflecting medium layer 8 is the SiO of thickness 0.54mm2Piece or thickness 0.31mm
High resistant silicon chip, size 1.5mm × 3mm, reflecting layer be chromium gold film layer, Cr layers of 30nm, Au layers of 400nm.Such as Fig. 3, device base
Top has resin pad 13 to be bonded in the both sides of substrate 2, the thickness 1.0mm of resin pad 13, and size is 3mm square, top bonding
There is High Resistivity Si hemispherical mirror 1, realize detecting High Resistivity Si mirror and InSb the mechanical support of sensitive unit 10 by resin pad 13.
This patent indium antimonide terahertz detector is prepared：
(1) indium antimonide body material (burnishing surface and the lining of single-sided polishing are bonded in alumina substrate using epoxide-resin glue
Bottom is bonded), it is thinning and polish, obtain indium antimonide thin layer；Using chemical vapour deposition technique in indium antimonide thin layer surface low-temperature epitaxy
SiOxPassivating film；
(2) semiconductor etching process for combining is etched using wet-dry change and makes the sensitive unit's table top of indium antimonide, use photoetching, plating
The plane coupled antenna of gold process making devices, pastes alumina substrate High Resistivity Si lens centre and draws spun gold lead
Onto switching sheet metal；
(3) suitable thickness is set in the sensitive unit of device, and the gold-plated reflecting medium layer in the back side, the sensitive unit position of enhancing is special
Determine the electric-field intensity of frequency THz wave；Size 1.5mm × 3mm, the SiO of thickness 0.54mm is set2Dielectric layer or thickness
The high resistant silicon dielectric layer of 0.31mm, lower surface chromium plating golden membranous layer.For 340GHz and 500GHz light waves, what this dielectric layer was produced
Optical path difference is quarter-wave even-multiple, may be such that the terahertz light for being reflected back device position is identical with incident light phase
And relevant enhancing so that device strengthens in the response of the two wavelength locations；
(4) realize that switching sheet metal and device pin are electrically connected using conductive silicone grease, to be realized using resin pad right
The mechanical support of silicon mirror and device.
The sensitive detection parts of the metal-indium antimonide-metal structure of this patent, are capable of achieving the broadband to 0.04THz-2.5THz
Response and high speed, highly sensitive detection, with reference to appropriate bottom reflecting medium layer, can be reflected back device by the terahertz light of fractional transmission
Position, with the relevant enhancing of former incident light, improves the response of the frequencies such as 0.34THz, 0.5THz, relative to the device of areflexia dielectric layer
Part improves about more than 100%.
Brief description of the drawings：
Fig. 1 is InSb terahertz detector device junctions composition (side-looking) of this patent.
Fig. 2 is the partial enlarged drawing (side-looking) of panel detector structure figure.
Fig. 3 is the InSb terahertz detector device junction compositions of this patent embodiment 1-6, wherein figure (a) is this patent reality
The InSb terahertz detector device junction compositions of a 1-3 are applied, using log spiral antenna electrode；Figure (b) is this patent embodiment
InSb terahertz detector device junctions composition (vertical view) of 4-6, using butterfly antenna electrode.
Fig. 4 is the InSb terahertz detector preparation method flow charts of this patent.
Specific embodiment
To make the purpose, technical scheme and advantage of this patent clearer, the example of this patent is described below in conjunction with the accompanying drawings
The technical scheme of property embodiment.
According to said structure, 6 embodiment detectors have been made：
Embodiment detector 1~3：Side view is as shown in figure 1, top view is corresponding with Fig. 3 (a).On the substrate 2, successively
It is the sensitive unit 10 of indium antimonide, surface passivation film layer 11, reflecting medium layer 8, chromium gold metal layer 12.In the surface-sensitive unit 10 of substrate 2
The left and right sides, making has antenna electrode 7, and first 10 both sides sensitive with indium antimonide are connected respectively, and sensitive unit 10 is 50 μm wide micro-
Table top, surface SiOxThe thickness 700nm of passivating film 11；The thickness 0.25mm of aluminum oxide white stone substrate 2, size is 1.4mm × 4.2mm；
Reflecting medium layer 8 is thickness 0.54mm, the SiO of size 1.5mm × 3mm2Piece.There is resin pad 13 to be located at lining on device base 6
The both sides at bottom 2, the size of resin pad 13 is 3mm square, and its top is bonded with High Resistivity Si hemispherical mirror 1, by resin pad reality
Now to High Resistivity Si hemispherical mirror 1 and the mechanical support of the sensitive unit 10 of InSb detections.In embodiment 1, sensitive 8 μm of thickness of unit, both sides
15 μm of electrode spacing, two spiral arms being centrosymmetric with the log spiral antenna electrode of overall length 0.6mm respectively are connected；Embodiment
In 2, sensitive 10 μm of thickness of unit, 50 μm of both sides electrode spacing is in respectively center with the log spiral antenna electrode of overall length 0.75mm
Two symmetrical spiral arms are connected；In embodiment 3, sensitive 90 μm of unit's both sides electrode spacing, 11 μm of thickness, respectively with overall length 0.90mm
Two spiral arms being centrosymmetric of log spiral antenna electrode be connected.
Embodiment detector 4~6：Side view is as shown in figure 1, top view is corresponding with Fig. 3 (b).On the substrate 2, successively
It is the sensitive unit 10 of indium antimonide, reflecting medium layer 8, surface passivation film layer 11, chromium gold metal layer 12.In the sensitive unit 10 of substrate surface
The left and right sides, making has antenna electrode 7, is connected with the sensitive unit both sides of indium antimonide respectively.Sensitive unit is 50 μm wide of micro- table top, table
Face SiOxPassivation film thickness 700nm；The thickness 0.25mm of aluminum oxide white stone substrate 2, size is 1.4mm × 4.2mm；Reflecting medium layer
8 is thickness 0.31mm, the high resistant silicon chip of size 1.5mm × 3mm.There is resin pad 13 on device base 6 in the both sides of substrate 2,
The size of resin pad 13 is 3mm square, and top is bonded with High Resistivity Si hemispherical mirror 1, is realized to High Resistivity Si mirror 1 by resin pad
With the mechanical support of the sensitive unit 10 of InSb detections.In embodiment 4, sensitive 15 μm of unit's both sides electrode spacing, 8 μm of thickness, both sides point
Two butterfly valves not with symmetrical, overall length 0.45mm butterfly antenna are connected；In embodiment 5, sensitive unit's both sides electrode spacing
50 μm, 10 μm of thickness, two butterfly valves of the both sides respectively with symmetrical, overall length 0.60mm butterfly antenna are connected, embodiment 6
In, sensitive 90 μm of unit's both sides electrode spacing, 11 μm of thickness, both sides respectively with symmetrical, overall length 0.90mm butterfly antenna
Two butterfly valves are connected.
The InSb terahertz detector preparation method flow charts that Fig. 4 is used by this patent embodiment 1-6.As shown in figure 4,
InSb terahertz detectors preparation method includes paster and thinning making InSb film layers, and surface passivating treatment makes detector quick
Sense unit and coupled antenna electrode, several flows such as substrate cutting and device spot welding encapsulation, idiographic flow are described as follows：
1 throws N-shaped InSb monocrystal materials from the single of (111) crystal orientation undoped p, and monocrystalline material is protected using the photoresists of AZ 1500
The shiny surface of material, using diamant is along material cleavage surface scribing and cuts, acquisition area is 1.2 × 1.2cm2Quadrate In Sb lining
Egative film.
2, using acetone, alcohol, deionized water cleaning sample piece, are dried up using drying nitrogen.Will using epoxide-resin glue
The shiny surface of InSb body material samples is pasted onto diameter 18mm, in the alumina substrate 2 of thickness 0.25mm.Manually polish
InSb substrate slices are thinned to 50 microns by mode, and it is further thinning to use mechanical polisher instead, thicknesses of layers is thinned into 8-11 micro-
Rice.
3 material surfaces are passivated.Using the low pressure chemical vapor deposition reactor of Tystar companies, using ultraviolet light enhancing low temperature depositing
Mode prepares SiOxDeielectric-coating is used as material surface passivation film.Passivation film preparation is in two steps：The first step, working gas SiH4：
Ni2O=6sccm:120sccm, sedimentation time 30 minutes, operating air pressure 800mTorr, 150 DEG C of depositing temperature；Second step, work
Gas SiH4：Ni2O=10sccm:60sccm, sedimentation time 50 minutes, operating air pressure 600mTorr, 150 DEG C of depositing temperature is blunt
It is 700nm to change layer gross thickness.
4 figure photoetching and wet etching.Figure photoetching is carried out from photoresist AZ 5200, spin coating machine speed is set to 4000
Rev/min, spin coating time is set to 30 seconds.Figure photoetching, development obtains photoetching adhesive tape.Wet etching：According to HF：HAC：H2O2=1:
1:1 proportions etching liquid, carries out wet etching, obtains the InSb table tops of partial etching (etching depth 6-7 microns).Dry method
Etching：Using argon ion dry etching method, remaining InSb material layers and epoxy resin adhesive-layer are removed, obtain micro- of InSb
Face.Respectively using acetone, alcohol, deionized water successively cleaning sample piece 3 minutes, residual photoresist is removed totally, use nitrogen
Gas dries up print.
5 is gold-plated.Figure photoetching is carried out from photoresist AZ4620, spin coating machine speed is set to 4000 revs/min, and spin coating time sets
It is 30 seconds.Figure photoetching, development obtains antenna electrode pattern.30nm thick Cr films are coated with using magnetron sputtering and 400nm is thick
Au films.Using acetone soak sample 5 minutes, completion was removed photoresist and floats gold.Using alcohol, deionized water cleaning sample piece, nitrogen blows
It is dry.Produce log spiral antenna electrode 7, overall antenna length 0.60mm-0.90mm, 15-90 μm of electrode spacing, as shown in Figure 3 a.
Optionally, making butterfly antenna 7, overall antenna length 0.45mm-0.90mm, 15-90 μm of electrode spacing, as shown in Figure 3 b.
6 sections and spot welding.Scribing is carried out to sample along cross alignment mark using diamant scribing machine.Use epoxy resin
Alumina substrate 2 is adhered to glue 3 center of diameter 12mm, the hemispherical silicon mirror 1 of development length 1.74mm, uses WT-
2330 type gold wire bonders enter line lead welding, using 25 microns of gold thread 9 of diameter, device antenna electrode 7 are connected to pre-
First it is adhered on the metal switching piece 4 of the both sides of 1 surface substrate of High Resistivity Si mirror 2.
The setting of 7 reflecting medium layers 8.Thickness 0.54mm, the SiO of size 1.5mm × 3mm are set2Substrate slice is used as reflection
Dielectric layer 8, optionally, sets thickness 0.31mm, the high resistant silicon chip of size 1.5mm × 3mm as reflecting medium layer 8, and at this
Upper chromium plating gold reflecting layer 11, Cr thickness 30nm, Au thickness 400nm.Reflecting medium layer 8 is pasted into device using epoxide-resin glue
Surface, the center of reflecting medium layer 8 alignment detection unit.
8 realize being electrically connected for metal switching piece 4 and device base 6 using conductive silicone grease 5, using resin pad 13, lead to
Epoxy resin glue sticking is crossed, realizes device base 6 to High Resistivity Si hemispherical mirror 1 and the mechanical support of the sensitive unit 10 of InSb detections.
Obviously described embodiment is a part of embodiment of this patent, rather than whole embodiments.It is described
Embodiment be only used for illustrating, rather than the limitation to this patent scope.Embodiment based on this patent, this area is common
All other embodiment that technical staff is obtained under the premise of creative work is not made, belongs to the model of this patent protection
Enclose.
Claims (1)
- The sensitive unit (10) of 1. a kind of indium antimonide terahertz detector, including High Resistivity Si hemispherical mirror (1), substrate (2), indium antimonide, Surface passivation film layer (11), antenna electrode (7), reflecting medium layer (8) and chromium gold metal layer (12), it is characterised in that detector knot Structure is as follows：Described High Resistivity Si hemispherical mirror (1) central lower is followed successively by epoxide-resin glue (3) and substrate (2), the silicon mirror of its both sides Surface mount has metal switching piece (4), in the lower section at substrate (2) center, is followed successively by the sensitive unit (10) of indium antimonide, surface passivated membrane Layer (11), reflecting medium layer (8), chromium gold metal layer (12)；In substrate (2) surface-sensitive unit (10) left and right sides, making has day Line electrode (7), is connected with sensitive unit (10) both sides of indium antimonide respectively, and antenna electrode (7) is transferred by gold thread (9) and both sides metal Piece (4) is connected, and metal switching piece (4) lower section is connected by conductive silicone grease (5) with device base (6) pin, and base (6) top is viscous The resin pad (13) for connecing realizes the mechanical support to High Resistivity Si hemispherical mirror (1)；Described substrate (2) is aluminum oxide white stone Piece, thickness is 0.25mm, and size is 1.4mm × 4.2mm；Sensitive 8-11 μm of (10) thickness of unit of described indium antimonide, electrode spacing It is 15-90 μm；Described antenna electrode (7) is the butterfly antenna electrode of overall length 0.45-0.90mm, or overall length 0.6-0.9mm Log spiral antenna electrode；Described reflecting medium layer (8) is thickness 0.54mm, the SiO of size 1.5mm × 3mm2Piece, or it is thick Degree 0.31mm, the high resistant silicon chip of size 1.5mm × 3mm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107068783A (en) * | 2016-11-25 | 2017-08-18 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and preparation method |
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| CN107068783A (en) * | 2016-11-25 | 2017-08-18 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and preparation method |
| CN107068783B (en) * | 2016-11-25 | 2018-08-14 | 中国科学院上海技术物理研究所 | A kind of indium antimonide terahertz detector and production method |
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