CN103346232A - Dark ultraviolet light emitting diode and preparation method thereof - Google Patents
Dark ultraviolet light emitting diode and preparation method thereof Download PDFInfo
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- CN103346232A CN103346232A CN2013102687220A CN201310268722A CN103346232A CN 103346232 A CN103346232 A CN 103346232A CN 2013102687220 A CN2013102687220 A CN 2013102687220A CN 201310268722 A CN201310268722 A CN 201310268722A CN 103346232 A CN103346232 A CN 103346232A
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Abstract
The invention provides a dark ultraviolet light emitting diode and a preparation method of the dark ultraviolet light emitting diode, and relates to the light emitting diode. A substrate is arranged in the dark ultraviolet light emitting diode, an AlN buffer layer, an n-AlGaN layer, an active layer, a p-AlGan layer and a p-GaN cover layer are sequentially grown on the substrate, aluminum nano-particle arrays are deposited on the p-GaN cover layer, n-type electrodes are arranged on the n-AlGaN layer, and p-type electrodes are arranged on the p-GaN cover layer. The AlN buffer layer, the n-AlGaN layer, the active layer, the p-AlGaN layer and the p-GaN cover layer are sequentially grown on the substrate. An n-type table top is etched through the ICP technology, p-type ohmic contact and n-type ohmic contact are respectively formed through the processing technologies of photoetching, vacuum electron beam evaporation and deposition and rapid thermal annealing, the aluminum nano-particles arrays are deposited on the p-GaN cover layer, the n-type electrodes are arranged on the n-AlGaN layer, and the p-type electrodes are arranged on the p-GaN cover layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially relate to a kind of local surface phasmon effect of utilizing and effectively improve deep-UV light-emitting diode of light extraction efficiency and preparation method thereof.
Background technology
Light-emitting diode is as light source of new generation behind incandescent lamp and fluorescent lamp, remarkable advantage such as have long service life, caloric value is low, response speed is fast, environmental protection, safety, volume are little.Wherein, (Deep Ultraviolet Light Emitting Diode DUV-LED) has important use in fields such as biologic medical, false proof evaluation, water and air purification, computer data storage and military affairs to the deep-UV light-emitting diode of wavelength between 220～350nm.Yet, owing to be subjected to that film defects density height, polarity mix, the restriction of the factors such as absorption of electrode pair light, cause the optical output power loss serious, thereby restricted the further raising of deep ultraviolet LED external quantum efficiency.Compare with blue-ray LED, the external quantum efficiency of deep ultraviolet LED is in a very low level.And than improving internal quantum efficiency, the raising of light extraction efficiency is the key that effectively strengthens the LED external quantum efficiency.
When the illumination of specific wavelength is mapped on the metal, collective oscillation will take place in the electronics in the metal under effect of electric field, this effect just be referred to as the surface plasma excimer effect (Surface Plasmon Resonance, SPR).If metal is prepared into nano particle, when the illumination of specific wavelength is mapped on the metal nanoparticle, electronics in the metal nanoparticle will produce collective oscillation, and this vibration will be by local in corresponding nano particle, be referred to as local surface plasma vibration (Localized Surface Plasmon Resonance, LSPR) effect, than the SPR effect, because the surface curvature radius of metal nanoparticle is minimum, the LSPR effect can be so that the local electromagnetic field in the metal nanoparticle near surface space be strengthened greatly, the most significant optical appearance of this effect is exactly enhanced light scattering and light absorption, produces strong resonance absorbing peak in the absorption spectra of metal nanoparticle thereby make.The peak position of LSPR resonance absorbing peak is for the size of nano particle, shape, intergranular spacing, dielectric environment and dielectric property sensitivity very are so can control the LSPR effect very effectively by the size, shape, composition and the dielectric environment that change metal nanoparticle.
The material of preparation surface phasmon generally has metals such as gold, silver, aluminium.The surface plasmon resonance peak of gold and silver generally is positioned near ultraviolet-visible light wave range (K.Okamoto, I.Niki, A.Shvartser, et al.Surface-plasmon-enhanced light emitters based on InGaN quantum wells[J] .Nature materials, 2004,3:601-605) and the surface plasmon resonance peak of aluminium can reach the deep ultraviolet wave band of 250nm, be to produce the most effective a kind of metal of surface phasmon with the deep UV (ultraviolet light) coupling known at present, provide desirable source for improving the deep-UV light-emitting diode external quantum efficiency.Existing work now effectively improves the light extraction efficiency (N.Gao of deep ultraviolet LED by evaporation layer of aluminum film on complete deep ultraviolet LED, K.Huang, J.C.Li, et al.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells[J] .Scientific Repoets, 2012,2:816; Chinese patent CN102544298A).But membrane structure is not the structure that is conducive to strengthen bright dipping most, film can't be coupled with the TE ripple on the one hand, very strong reflection and absorption will take place in original TE ripple along the outgoing of outgoing light cone when penetrating the aluminium film, fraction can penetrate the aluminium film and outgoing thereby have only very; Can be coupled with film though TM is thin on the other hand, the surface phasmon that its coupling back produces in Al/ interface place will be decayed when penetrating the aluminium film.Than the deposition of aluminum film, covering the layer of aluminum nano particle at deep ultraviolet LED can be coupled better and between the light of multiple waveguide mode (TM and TE pattern), and at the LSP compound tense, the decay that produces in the time of also can penetrating metal taking place, more be conducive to the raising of deep ultraviolet LED light extraction efficiency, thereby improve external quantum efficiency.
Summary of the invention
The objective of the invention is to problems such as the light extraction efficiency that exists at existing deep-UV light-emitting diode is not high, provide the novel local surface phasmon effect of utilizing effectively to improve a kind of deep-UV light-emitting diode of light extraction efficiency and preparation method thereof.
Described deep-UV light-emitting diode is provided with substrate, growing AIN resilient coating, n-AlGaN layer, active layer, p-AlGaN layer and p-GaN cap rock successively on substrate, deposition of aluminum nano-grain array on the p-GaN cap rock is provided with n type electrode at the n-AlGaN layer, is provided with the p-type electrode at the p-GaN cap rock.
Described substrate can adopt c surface sapphire substrate etc.The thickness of described p-GaN cap rock can be less than 20nm, and its main cause is in order to reduce this p-GaN cap rock to the absorption of front emergent light.
The preparation method of described deep-UV light-emitting diode may further comprise the steps:
(1) growing AIN resilient coating, n-AlGaN layer, active layer, p-AlGaN layer and p-GaN cap rock successively on substrate;
(2) adopt the ICP technology to etch n type table top, and form the ohmic contact of p-type, n type by photoetching, vacuum electron beam hydatogenesis and quick thermal annealing process technology respectively;
(3) deposition of aluminum nano-grain array on the p-GaN cap rock;
(4) establish n type electrode at the n-AlGaN layer, establish the p-type electrode at the p-GaN cap rock.
With the optical coupling of certain frequency the time, electronics in the metal nanoparticle will produce collective oscillation, this vibration by local in corresponding nano particle, produce local surface plasma vibration (LSPR), the LSPR resonance energy of Al/GaN is about (250nm) about 5eV, is in the deep ultraviolet wave band.Therefore, GaN deposition of aluminum nano-grain array can will be coupled in the metal by the optical guided wave (comprise TE ripple and TM ripple) of local in the GaN epitaxial loayer on cap rock, produce the local surface plasmon resonance, at the inner recombination luminescence of aluminium nano particle, thereby improve the light extraction efficiency.
The peak position of LSPR resonance absorbing peak is for the size of nano particle, shape, intergranular spacing, dielectric environment and dielectric property sensitivity very, so can regulate and control by the size density to the aluminium nano particle, thereby be optimized at the light extraction yield of different wave length deep-UV light-emitting diode.
Outstanding advantage of the present invention is:
The inventive method makes aluminium nano-grain array and GaN interface produce the local surface plasmon resonance by introducing the aluminium nano-grain array on the deep-UV light-emitting diode surface, improves the light extraction efficiency of device.And by regulating and control the size density of an aluminium nanometer array, optimize the light extraction yield of different wave length deep-UV light-emitting diode.
Description of drawings
Fig. 1 is that the structure of the embodiment of the invention is formed schematic diagram.In Fig. 1, respectively be labeled as: 1-substrate, 2-AlN resilient coating, 3-n-AlGaN layer, 4-active layer, 5-p-AlGaN layer, 6-p-GaN cap rock, 7-p type electrode, 8-n type electrode, 9-aluminium nano-grain array.
Embodiment
Referring to Fig. 1, described a kind of deep-UV light-emitting diode embodiment is provided with substrate, growing AIN resilient coating 2, n-AlGaN layer 3, active layer 4, p-AlGaN layer 5 and p-GaN cap rock 6 successively on substrate 1, a deposition of aluminum nanometer array 9 on p-GaN cap rock 6, establish n type electrode 8 at n-AlGaN layer 3, establish p-type electrode 7 at p-GaN cap rock 6.
Described substrate 1 adopts the c surface sapphire substrate.The thickness of described p-GaN cap rock 6 is less than 20nm.
The preparation method of described deep-UV light-emitting diode may further comprise the steps:
(1) growing AIN resilient coating 2, n-AlGaN layer 3, active layer 4, p-AlGaN layer 5 and p-GaN cap rock 6 on substrate 1;
(2) adopt the ICP technology to etch n type table top, and form the ohmic contact of p-type, n type by photoetching, vacuum electron beam hydatogenesis and quick thermal annealing process technology respectively;
(3) deposition of aluminum nano-grain array 9 on p-GaN cap rock 6;
(4) establish n type electrode 8 at n-AlGaN layer 3, establish p-type electrode 7 at p-GaN cap rock 6.
The thickness of described p-GaN cap rock 6 is less than 20nm, and its main cause is in order to reduce this cap rock to the absorption of front emergent light.
The aluminium nano-grain array 9 of deposition will be coupled in the metal by the optical guided wave (comprise TE ripple and TM ripple) of local in the GaN epitaxial loayer on the described p-GaN cap rock 6, produce the local surface plasmon resonance, at the inner recombination luminescence of aluminium nano particle, thus the extraction efficiency of raising front lighting.
The size adjustable density control of a described aluminium nanometer array 9, thus can be optimized at the light extraction yield of different wave length deep-UV light-emitting diode.
Deep-UV light-emitting diode of the present invention and preparation method thereof, it adopts conventional technology manufacture method and equipment made, specifically comprises following detailed step:
(1) utilizes gas phase epitaxy of metal organic compound (MOVPE) technology growing AIN resilient coating, n-AlGaN layer, active layer, p-AlGaN layer and p-GaN cap rock successively on the c surface sapphire substrate, formation makes the dominant wavelength of its glow peak be in 250～300nm based on the deep-UV light-emitting diode structure of AlGaN quantum well.Wherein,
The thickness of p-GaN cap rock is less than 20nm;
(2) adopt inductively coupled plasma etching (ICP) technology to etch n type table top, and form ohmic contact at n-AlGaN and p-GaN respectively by photoetching, vacuum electron beam hydatogenesis and quick thermal annealing process technology;
(3) deposition of aluminum nano-grain array on the p-GaN cap rock.
Below be given in the specific embodiment of deposition of aluminum nano-grain array on the p-GaN cap rock.
Method deposition of aluminum nano-grain array on the p-GaN cap rock by in-situ annealing in the vacuum electron beam vapo(u)rization system.In the preparation process, programme at first in advance, the aluminium film thickness that deposit is made as 5nm, by the corresponding aluminium target of electron gun bombardment, heating makes the material evaporation, is adsorbed on the p-GaN cap rock, forms aluminium film.Directly annealing forms the aluminium nano-grain array in vacuum electron beam vapo(u)rization system reaction chamber, and annealing temperature is 300 °, and annealing time is 5min.
Method deposition of aluminum nano-grain array on the p-GaN cap rock by in-situ annealing in the vacuum electron beam vapo(u)rization system.In the preparation process, programme at first in advance, the aluminium film thickness that deposit is made as 10nm, by the corresponding aluminium target of electron gun bombardment, heating makes the material evaporation, is adsorbed on the p-GaN cap rock, forms aluminium film.Directly annealing forms the aluminium nano-grain array in vacuum electron beam vapo(u)rization system reaction chamber, and annealing temperature is 300 °, and annealing time is 5min.
Prepare the aluminium nano-grain array by the method in vacuum electron beam vapo(u)rization system medium dip deposition at the p-GaN cap rock.In the preparation process, LED is placed on the wedge shape platform, wedge shape platform inclination angle angle is 30 °, and it is 5nm that the aluminium film thickness that deposit is set.By the corresponding aluminium target of electron gun bombardment, heating makes the material evaporation, is adsorbed on the p-GaN cap rock, forms the aluminium nano-grain array.
Prepare the aluminium nano-grain array by the method in vacuum electron beam vapo(u)rization system medium dip deposition at the p-GaN cap rock.In the preparation process, LED is placed on the wedge shape platform, wedge shape platform inclination angle angle is 60 °, and it is 5nm that the aluminium film thickness that deposit is set.By the corresponding aluminium target of electron gun bombardment, heating makes the material evaporation, is adsorbed on the p-GaN cap rock, forms the aluminium nano-grain array.
Claims (4)
1. deep-UV light-emitting diode, it is characterized in that being provided with substrate, growing AIN resilient coating, n-AlGaN layer, active layer, p-AlGaN layer and p-GaN cap rock successively on substrate, deposition of aluminum nano-grain array on the p-GaN cap rock, be provided with n type electrode at the n-AlGaN layer, be provided with the p-type electrode at the p-GaN cap rock.
2. a kind of deep-UV light-emitting diode according to claim 1 is characterized in that described substrate adopts the c surface sapphire substrate.
3. a kind of deep-UV light-emitting diode according to claim 1 is characterized in that the thickness of described p-GaN cap rock is less than 20nm.
4. the preparation method of deep-UV light-emitting diode according to claim 1 is characterized in that may further comprise the steps:
1) growing AIN resilient coating, n-AlGaN layer, active layer, p-AlGaN layer and p-GaN cap rock successively on substrate;
2) adopt the ICP technology to etch n type table top, and form the ohmic contact of p-type, n type by photoetching, vacuum electron beam hydatogenesis and quick thermal annealing process technology respectively;
3) deposition of aluminum nano-grain array on the p-GaN cap rock;
4) establish n type electrode at the n-AlGaN layer, establish the p-type electrode at the p-GaN cap rock.
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| CN103681996A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | UV (Ultraviolet) LED and preparation method thereof |
| CN106684221A (en) * | 2016-11-23 | 2017-05-17 | 浙江大学 | Graphene/gallium nitride/metal nanoparticle two-way light-emitting diode and manufacturing method thereof |
| CN106816503A (en) * | 2017-01-23 | 2017-06-09 | 华灿光电（浙江）有限公司 | The epitaxial wafer and preparation method of a kind of blue-green light LED |
| CN109285912A (en) * | 2018-09-28 | 2019-01-29 | 中国科学院理化技术研究所 | One kind being based on LiB3O5The deep ultraviolet diode component of crystal |
| CN109962125A (en) * | 2017-12-14 | 2019-07-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of plasmon enhancement type deep ultraviolet detector and preparation method thereof |
| CN110993754A (en) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
| CN112133803A (en) * | 2020-09-21 | 2020-12-25 | 厦门乾照光电股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN112472835A (en) * | 2020-11-06 | 2021-03-12 | 刘翡琼 | Clothes sterilizing device |
| CN114583031A (en) * | 2022-01-27 | 2022-06-03 | 南京邮电大学 | Ultraviolet Micro-LED based on LSPs coupling enhancement |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681996A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | UV (Ultraviolet) LED and preparation method thereof |
| CN106684221A (en) * | 2016-11-23 | 2017-05-17 | 浙江大学 | Graphene/gallium nitride/metal nanoparticle two-way light-emitting diode and manufacturing method thereof |
| CN106816503A (en) * | 2017-01-23 | 2017-06-09 | 华灿光电（浙江）有限公司 | The epitaxial wafer and preparation method of a kind of blue-green light LED |
| CN109962125A (en) * | 2017-12-14 | 2019-07-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of plasmon enhancement type deep ultraviolet detector and preparation method thereof |
| CN109285912A (en) * | 2018-09-28 | 2019-01-29 | 中国科学院理化技术研究所 | One kind being based on LiB3O5The deep ultraviolet diode component of crystal |
| CN110993754A (en) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
| CN112133803A (en) * | 2020-09-21 | 2020-12-25 | 厦门乾照光电股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN112472835A (en) * | 2020-11-06 | 2021-03-12 | 刘翡琼 | Clothes sterilizing device |
| CN114583031A (en) * | 2022-01-27 | 2022-06-03 | 南京邮电大学 | Ultraviolet Micro-LED based on LSPs coupling enhancement |
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