CN106816503A - The epitaxial wafer and preparation method of a kind of blue-green light LED - Google Patents
The epitaxial wafer and preparation method of a kind of blue-green light LED Download PDFInfo
- Publication number
- CN106816503A CN106816503A CN201710051020.5A CN201710051020A CN106816503A CN 106816503 A CN106816503 A CN 106816503A CN 201710051020 A CN201710051020 A CN 201710051020A CN 106816503 A CN106816503 A CN 106816503A
- Authority
- CN
- China
- Prior art keywords
- layer
- gan layer
- epitaxial wafer
- thickness
- film substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
The invention discloses the epitaxial wafer and preparation method of a kind of blue-green light LED, belong to photoelectron technical field.The epitaxial wafer includes plain film substrate and the AlN cushions, u-shaped GaN layer, N-type GaN layer, active layer and the p-type GaN layer that are sequentially laminated on plain film substrate, the thickness of AlN cushions is dnm, 5≤d ＜ 25, due to using plain film substrate, compared to the cost that making can be reduced using PSS, due to being provided with AlN cushions on plain film substrate, and the thickness of AlN cushions is 5nm~25nm, the lattice parameter of AlN cushions is close to plain film substrate and u-shaped GaN layer, such that it is able to reduce the lattice defect in epitaxial wafer, the quality of epitaxial wafer is improved.
Description
Technical field
The present invention relates to photoelectron technical field, the epitaxial wafer of more particularly to a kind of blue-green light LED and preparation side
Method.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) as great shadow in photoelectronic industry
Ring the new product of power, with small volume, long service life, various colors are colorful, the low feature of energy consumption, be widely used in illumination,
The fields such as display screen, signal lamp, backlight, toy.Chip is the core component of LED, and it is added by epitaxial wafer by multiple working procedure
Work is formed.
The epitaxial wafer of blue-green light LED mainly includes substrate and the cushion, the u-shaped GaN that are grown in successively on substrate
Layer, N-type GaN layer, active layer and p-type GaN layer.Wherein, substrate is using patterned substrate (English：Patterned Sapphire
Substrate, referred to as：) or plain film substrate PSS.According to plain film substrate, then there is very big lattice between substrate and GaN
Mismatch, the brightness that ultimately results in LED is too low, antistatic effect is poor；According to PSS, then can reduce between substrate and GaN
Lattice mismatch, improves the quality of epitaxial wafer, but the cost of manufacture of PSS is higher, and causing the cost of LED increases.
The content of the invention
In order to solve that using PSS of the prior art the cost can be caused to increase, and epitaxial wafer can be reduced using plain film substrate
Quality problem, the embodiment of the invention provides the epitaxial wafer and preparation method of a kind of blue-green light LED.The skill
Art scheme is as follows：
On the one hand, a kind of epitaxial wafer of blue-green light LED is the embodiment of the invention provides, the epitaxial wafer includes
Plain film substrate and the AlN cushions, u-shaped GaN layer, N-type GaN layer, active layer and the p-type that are sequentially laminated on the plain film substrate
GaN layer, wherein, the thickness of the AlN cushions is 5nm~50nm.
Preferably, the thickness of the AlN cushions is dnm, 5≤d ＜ 25.
Further, the active layer includes alternately laminated multiple InGaN well layer and multiple GaN barrier layer, the InGaN
The thickness of well layer is 2.8nm~3.8nm, and the thickness of the GaN barrier layer is 5nm~30nm.
Preferably, the thickness of the N-type GaN layer is 1 μm~4 μm.
Preferably, the thickness of the p-type GaN layer is 100nm~500nm.
On the other hand, the embodiment of the present invention additionally provides a kind of preparation method of the epitaxial wafer of blue-green light LED,
The preparation method includes：
One plain film substrate is provided；
In the plain film substrate Epitaxial growth AlN cushions；
U-shaped GaN layer is grown on the AlN cushions；
N-type GaN layer is grown in the u-shaped GaN layer；
Active layer is grown in the N-type GaN layer；
The growth P-type GaN layer on the active layer,
Wherein, the thickness of the AlN cushions is dnm, 5≤d ＜ 25.
Further, the growth temperature of the AlN cushions is 1000~1100 DEG C.
Preferably, the active layer includes alternately laminated multiple InGaN well layer and multiple GaN barrier layer, the multiple
The growth temperature of InGaN well layer is 790~820 DEG C, and the growth temperature of the multiple GaN barrier layer is 910~940 DEG C.
Alternatively, the growth temperature of the N-type GaN layer is 1210~1240 DEG C.
Alternatively, the growth temperature of the p-type GaN layer is 980~1010 DEG C.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：Stacked gradually by plain film substrate
AlN cushions, u-shaped GaN layer, N-type GaN layer, active layer and p-type GaN layer, due to using plain film substrate, can be with compared to using PSS
The cost for making is reduced, while AlN cushions are provided with plain film substrate, and the thickness of AlN cushions is 5nm~25nm, AlN
The lattice parameter of cushion, such that it is able to reduce the lattice defect in epitaxial wafer, is improved close to plain film substrate and u-shaped GaN layer
The quality of epitaxial wafer.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will make needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of the epitaxial wafer of blue-green light LED provided in an embodiment of the present invention；
Fig. 2 is a kind of structural representation of active layer provided in an embodiment of the present invention；
Fig. 3 is a kind of flow of the preparation method of the epitaxial wafer of blue-green light LED provided in an embodiment of the present invention
Figure；
Fig. 4 is the flow of the preparation method of the epitaxial wafer of another blue-green light LED provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural representation of the epitaxial wafer of blue-green light LED provided in an embodiment of the present invention, such as Fig. 1
Shown, the epitaxial wafer includes plain film substrate 10 and the AlN cushions 20, the u-shaped GaN layer 30, N that are sequentially laminated on plain film substrate 10
Type GaN layer 40, active layer 50 and p-type GaN layer 60, wherein, thickness d nm, 5≤d ＜ 25 of AlN cushions 20.
By stacking gradually AlN cushions, u-shaped GaN layer, N-type GaN layer, active layer and p-type GaN layer on plain film substrate,
Due to using plain film substrate, compared to the cost of making can be reduced using PSS, while AlN cushions are provided with plain film substrate,
And the thickness of AlN cushions be 5nm~25nm, the lattice parameter of AlN cushions close to plain film substrate and u-shaped GaN layer so that
The lattice defect in epitaxial wafer can be reduced, the quality of epitaxial wafer is improved.
It should be noted that plain film substrate 10 can be sapphire plain film substrate.
Preferably, the thickness of AlN cushions 20 can be 10nm~25nm, when growing the AlN cushions 20 of different-thickness,
The quality of the epitaxial layer for ultimately forming also is differed, if the thickness of AlN cushions 20 is excessively thin, can cause AlN cushions 20
Surface is more loose and coarse, it is impossible to for the growth of follow-up GaN provides a good template, with the thickness of AlN cushions 20
Increase, the surface of AlN cushions 20 gradually becomes comparatively dense and smooth, be conducive to the growth of follow-up GaN, but if AlN is slow
The thickness for rushing layer 20 is blocked up, then the surface of AlN cushions 20 can be caused excessively fine and close, is unfavorable for the growth of follow-up GaN, it is impossible to subtract
Lattice defect in few epitaxial wafer.
Alternatively, the thickness of u-shaped GaN layer 30 can be 1~4 μm.
Preferably, the thickness of u-shaped GaN layer 30 is 2 μm, and the excessively thin meeting of thickness of u-shaped GaN layer 30 causes the resistance mistake of epitaxial layer
It is small, cause backward voltage to reduce, if the thickness of u-shaped GaN layer 30 is blocked up the resistance of epitaxial layer can be caused excessive, cause positive electricity
Pressure is raised.
Alternatively, the thickness of N-type GaN layer 40 can be 1 μm~4 μm.
Preferably, the thickness of N-type GaN layer 40 is 2 μm, if N-type GaN layer 40 is excessively thin, carrier number can be caused very few, positive
Overtension；If N-type GaN layer 40 is blocked up, can cause that the angularity of N-type GaN layer 40 increases.
Alternatively, the thickness of p-type GaN layer 60 is 100nm~500nm.
Preferably, the thickness of p-type GaN layer 60 is 200nm, if p-type GaN layer 60 is excessively thin, carrier number can be caused very few, just
To overtension；If p-type GaN layer 60 is blocked up, absorption of the p-type GaN layer 60 to light can be increased, reduce the brightness of LED.
Fig. 2 is a kind of structural representation of active layer provided in an embodiment of the present invention, as shown in Fig. 2 active layer 50 includes
Alternately laminated multiple InGaN well layer 51 and multiple GaN barrier layer 52, wherein, the thickness of InGaN well layer 51 can be 2.8nm~
The thickness of 3.8nm, GaN barrier layer 52 can be 5nm~30nm.
Preferably, the thickness of InGaN well layer 51 can be 3nm~3.5nm, the thickness of GaN barrier layer 52 can for 10~
20nm, if InGaN well layer 51 is excessively thin, can cause the luminance-reduction of LED；If InGaN well layer 51 is blocked up, lattice defect can be increased,
Reduce the quality of epitaxial wafer；If GaN barrier layer 52 is excessively thin, the volatilization of the In in InGaN well layer 51 can be accelerated；If the mistake of GaN barrier layer 52
Thickness, can reduce the brightness of LED.
Alternatively, the periodicity of active layer 50 could be arranged to 4~8, and in the present embodiment, the periodicity of active layer 50 is
6。
It should be noted that both can first grow one layer of InGaN well layer 51 in N-type GaN layer 40, it is also possible in N-type GaN
One layer of GaN barrier layer 52 is first grown on layer 40, Fig. 2 is merely illustrative, and the present invention is not limited thereto.
Fig. 3 is a kind of flow of the preparation method of the epitaxial wafer of blue-green light LED provided in an embodiment of the present invention
Figure, as shown in figure 3, the preparation method includes：
S11：One plain film substrate is provided.
S12：In plain film substrate Epitaxial growth AlN cushions.
Wherein, the thickness of AlN cushions is dnm, 5≤d ＜ 25.
S13：U-shaped GaN layer is grown on AlN cushions.
S14：N-type GaN layer is grown in u-shaped GaN layer.
S15：Active layer is grown in N-type GaN layer.
S16：The growth P-type GaN layer on active layer.
By stacking gradually AlN cushions, u-shaped GaN layer, N-type GaN layer, active layer and p-type GaN layer on plain film substrate,
Due to using plain film substrate, compared to the cost that making can be reduced using PSS, due to being provided with AlN cushions on plain film substrate,
And the thickness of AlN cushions be 5nm~25nm, the lattice parameter of AlN cushions close to plain film substrate and u-shaped GaN layer so that
The lattice defect in epitaxial wafer can be reduced, the quality of epitaxial wafer is improved.
Fig. 4 is the flow of the preparation method of the epitaxial wafer of another blue-green light LED provided in an embodiment of the present invention
Figure, as shown in figure 4, the preparation method includes：
S21：One plain film substrate is provided.
When realizing, the plain film substrate can be but not limited to sapphire plain film substrate.
Preferably, plain film substrate is sapphire plain film substrate, and the underlay producing technique of sapphire material is ripe, cost compared with
It is low, can be conducive to further reducing production cost.
In the present embodiment, using 4 cun of sapphire plain film substrate.
In the step s 21, sapphire plain film substrate can be pre-processed.
Specifically, sapphire plain film substrate can be placed on graphite plate, feeding MOCVD (Meta1Organic
Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) reaction chamber, by the temperature of MOCVD reaction chambers
Degree brings up to 1000~1100 DEG C, and increases the pressure of reaction chamber to 500torr, to sapphire plain film substrate in hydrogen atmosphere
Made annealing treatment and nitrogen treatment 5 minutes
S22：In plain film substrate Epitaxial growth AlN cushions.
Wherein, the thickness of AlN cushions can be dnm, 5≤d ＜ 25.
Preferably, the thickness of AlN cushions can be 10nm~25nm, when growing the AlN cushions of different-thickness, finally
The quality of the epitaxial layer of formation is also differed, if the thickness of AlN cushions is excessively thin, can cause the surface of AlN cushions more
Loose and coarse, it is impossible to for the growth of follow-up GaN provides a good template, with the increase of AlN buffer layer thicknesses, AlN delays
Rushing the surface of layer gradually becomes comparatively dense and smooth, is conducive to the growth of follow-up GaN, but if the thickness mistake of AlN cushions
Thickness, then can cause the surface of AlN cushions excessively fine and close, be unfavorable for the growth of follow-up GaN, it is impossible to reduce the lattice in epitaxial wafer
Defect.
S23：U-shaped GaN layer is grown on AlN cushions.
When realizing, the growth temperature of u-shaped GaN layer can be 1100~1200 DEG C.
Specifically, the temperature of MOCVD reaction chambers can be brought up to 1100~1200 DEG C, and reduces MOCVD reaction chambers
Pressure grows one layer 1 μm~4 μm of u-shaped GaN layer to 200torr on AlN cushions.
Preferably, the thickness of u-shaped GaN layer is 2 μm.
S24：N-type GaN layer is grown in u-shaped GaN layer.
When realizing, the growth temperature of N-type GaN layer can be 1210~1240 DEG C.
Specifically, after u-shaped GaN layer has been grown, the temperature for keeping MOCVD reaction chambers is 1210~1240 DEG C, and is kept
The pressure of MOCVD reaction chambers is 200torr, and one layer 1 μm~4 μm of N-type GaN layer is grown in u-shaped GaN layer.
S25：Active layer is grown in N-type GaN layer.
When realizing, active layer includes alternately laminated multiple InGaN well layer and multiple GaN barrier layer, multiple InGaN well layer
Growth temperature is 790~820 DEG C, and the growth temperature of multiple GaN barrier layer is 910~940 DEG C.
Specifically, after N-type GaN layer has been grown, the pressure of MOCVD reaction chambers is maintained into 200torr, adjusts MOCVD
The temperature of reaction chamber carries out the growth of InGaN well layer to 790~820 DEG C, adjusts the temperature of MOCVD reaction chambers to 910~940
DEG C, carry out the growth of GaN barrier layer.
Alternatively, the thickness of InGaN well layer can be 2.8nm~3.8nm, the thickness of GaN barrier layer can for 5nm~
30nm。
Alternatively, InGaN well layer and GaN barrier layer can respectively grow 4~8 layers, in the present embodiment, InGaN well layer and GaN
The number of plies of barrier layer is 6.
S26：The growth P-type GaN layer on active layer.
When realizing, the growth temperature of p-type GaN layer can be 980~1010 DEG C.
Specifically, after active layer has been grown, the temperature of MOCVD reaction chambers is improved to 980~1010 DEG C, and kept
The pressure of MOCVD reaction chambers is 200torr, and one layer of p-type GaN layer of 100nm~500nm is grown on active layer.
Compared to prior art, the growth temperature of N-type GaN layer, InGaN well layer, GaN barrier layer and p-type GaN layer improves
10~40 DEG C, the lattice defect in epitaxial wafer can be further reduced, improve the quality of epitaxial wafer.
It is compared by cost of manufacture, the preparation for carrying out epitaxial wafer using the above method can reduce by 35% expense
With greatly reducing production cost.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of epitaxial wafer of blue-green light LED, it is characterised in that the epitaxial wafer includes plain film substrate and successively layer
AlN cushions on the plain film substrate, u-shaped GaN layer, N-type GaN layer, active layer and p-type GaN layer are stacked in, wherein, the AlN
The thickness of cushion is dnm, 5≤d ＜ 25.
2. epitaxial wafer according to claim 1, it is characterised in that the thickness of the AlN cushions is 10nm~25nm.
3. epitaxial wafer according to claim 1, it is characterised in that the active layer includes alternately laminated multiple InGaN
Well layer and multiple GaN barrier layer, the thickness of the InGaN well layer is 2.8nm~3.8nm, the thickness of the GaN barrier layer be 5nm~
30nm。
4. epitaxial wafer according to claim 1, it is characterised in that the thickness of the N-type GaN layer is 1 μm~4 μm.
5. epitaxial wafer according to claim 1, it is characterised in that the thickness of the p-type GaN layer is 100nm~500nm.
6. a kind of preparation method of the epitaxial wafer of blue-green light LED, it is characterised in that the preparation method includes：
One plain film substrate is provided；
In the plain film substrate Epitaxial growth AlN cushions；
U-shaped GaN layer is grown on the AlN cushions；
N-type GaN layer is grown in the u-shaped GaN layer；
Active layer is grown in the N-type GaN layer；
The growth P-type GaN layer on the active layer,
Wherein, the thickness of the AlN cushions is dnm, 5≤d ＜ 25.
7. preparation method according to claim 6, it is characterised in that the growth temperature of the AlN cushions is 1000~
1100℃。
8. preparation method according to claim 6, it is characterised in that the active layer includes alternately laminated multiple
InGaN well layer and multiple GaN barrier layer, the growth temperature of the multiple InGaN well layer is 790~820 DEG C, and the multiple GaN builds
The growth temperature of layer is 910~940 DEG C.
9. preparation method according to claim 6, it is characterised in that the growth temperature of the N-type GaN layer is 1210~
1240℃。
10. preparation method according to claim 6, it is characterised in that the growth temperature of the p-type GaN layer is 980~
1010℃。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710051020.5A CN106816503A (en) | 2017-01-23 | 2017-01-23 | The epitaxial wafer and preparation method of a kind of blue-green light LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710051020.5A CN106816503A (en) | 2017-01-23 | 2017-01-23 | The epitaxial wafer and preparation method of a kind of blue-green light LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106816503A true CN106816503A (en) | 2017-06-09 |
Family
ID=59112332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710051020.5A Pending CN106816503A (en) | 2017-01-23 | 2017-01-23 | The epitaxial wafer and preparation method of a kind of blue-green light LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106816503A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428768A (en) * | 2018-02-08 | 2018-08-21 | 华灿光电（浙江）有限公司 | A kind of preparation method of the epitaxial wafer of light emitting diode |
| CN109638117A (en) * | 2018-11-29 | 2019-04-16 | 华灿光电（浙江）有限公司 | A kind of AlN template, epitaxial slice structure and manufacturing method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689586A (en) * | 2007-06-15 | 2010-03-31 | 罗姆股份有限公司 | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor |
| CN101740360A (en) * | 2009-12-02 | 2010-06-16 | 中国科学院半导体研究所 | Method for improving doping efficiency of magnesium in III-V family nitrides |
| US20110244617A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
| CN103346232A (en) * | 2013-06-28 | 2013-10-09 | 厦门大学 | Dark ultraviolet light emitting diode and preparation method thereof |
| CN105206726A (en) * | 2015-08-28 | 2015-12-30 | 山东浪潮华光光电子股份有限公司 | LED structure and growth method thereof |
| CN105336819A (en) * | 2015-09-24 | 2016-02-17 | 映瑞光电科技(上海)有限公司 | GaN-base LED epitaxial structure and preparation method thereof |
| CN106098746A (en) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | A kind of diode expitaxial sheet and preparation method thereof |
| CN106206897A (en) * | 2016-08-31 | 2016-12-07 | 聚灿光电科技股份有限公司 | The manufacture method of GaN base LED epitaxial structure |
-
2017
- 2017-01-23 CN CN201710051020.5A patent/CN106816503A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689586A (en) * | 2007-06-15 | 2010-03-31 | 罗姆股份有限公司 | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor |
| CN101740360A (en) * | 2009-12-02 | 2010-06-16 | 中国科学院半导体研究所 | Method for improving doping efficiency of magnesium in III-V family nitrides |
| US20110244617A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
| CN103346232A (en) * | 2013-06-28 | 2013-10-09 | 厦门大学 | Dark ultraviolet light emitting diode and preparation method thereof |
| CN105206726A (en) * | 2015-08-28 | 2015-12-30 | 山东浪潮华光光电子股份有限公司 | LED structure and growth method thereof |
| CN105336819A (en) * | 2015-09-24 | 2016-02-17 | 映瑞光电科技(上海)有限公司 | GaN-base LED epitaxial structure and preparation method thereof |
| CN106098746A (en) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | A kind of diode expitaxial sheet and preparation method thereof |
| CN106206897A (en) * | 2016-08-31 | 2016-12-07 | 聚灿光电科技股份有限公司 | The manufacture method of GaN base LED epitaxial structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428768A (en) * | 2018-02-08 | 2018-08-21 | 华灿光电（浙江）有限公司 | A kind of preparation method of the epitaxial wafer of light emitting diode |
| CN109638117A (en) * | 2018-11-29 | 2019-04-16 | 华灿光电（浙江）有限公司 | A kind of AlN template, epitaxial slice structure and manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106784216B (en) | A kind of epitaxial wafer and its growing method of GaN base light emitting | |
| CN105023979B (en) | A kind of GaN base LED epitaxial wafer and preparation method thereof | |
| CN109075226B (en) | Group III nitride laminate and group III nitride light-emitting element | |
| KR102112249B1 (en) | Semiconductor wafer | |
| CN106653971B (en) | A kind of epitaxial wafer and its growing method of GaN base light emitting | |
| CN105514232B (en) | A kind of production method of LED epitaxial slice, light emitting diode and epitaxial wafer | |
| CN108336203A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
| JP2011014861A (en) | Fabrication method of gallium nitride-based compound semiconductor | |
| CN106653970A (en) | Epitaxial wafer of light-emitting diode and growth method thereof | |
| CN116190519B (en) | LED epitaxial wafer, preparation method thereof and LED | |
| CN105633233A (en) | AlN template, preparation method of AlN template and semiconductor device on AlN template | |
| CN103811601A (en) | Method for GaN base LED multi-stage buffer layer growth with sapphire substrate serving as substrate | |
| CN107863422A (en) | A kind of preparation method of the epitaxial wafer of light emitting diode | |
| CN104022197A (en) | Light-emitting diode epitaxial wafer and manufacturing method thereof | |
| CN106848017B (en) | A kind of epitaxial wafer and its growing method of GaN base light emitting | |
| CN115020558A (en) | High-recombination-efficiency light-emitting diode epitaxial wafer and preparation method thereof | |
| CN106601883A (en) | Epitaxial wafer of light emitting diode (LED) and preparation method of epitaxial wafer | |
| CN109994580B (en) | Epitaxial wafer of light emitting diode and manufacturing method thereof | |
| CN115986018A (en) | Epitaxial wafer, epitaxial wafer preparation method and light emitting diode | |
| CN113571616B (en) | AlGaN-based deep ultraviolet light-emitting diode epitaxial wafer and preparation method thereof | |
| CN106816503A (en) | The epitaxial wafer and preparation method of a kind of blue-green light LED | |
| CN112802929A (en) | Epitaxial wafer of light emitting diode and preparation method thereof | |
| JP3157124U (en) | Structure of gallium nitride based light-emitting diode | |
| CN107359228B (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| CN106206869B (en) | A kind of growing method of GaN base light emitting epitaxial wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170609 |
|
| RJ01 | Rejection of invention patent application after publication |