CN109301002A - Based on (AlxGa1-x)2O3The UV photodetector and preparation method thereof of material MSM structure - Google Patents
Based on (AlxGa1-x)2O3The UV photodetector and preparation method thereof of material MSM structure Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 239000013077 target material Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 238000005477 sputtering target Methods 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
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- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
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- 230000008021 deposition Effects 0.000 description 4
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- 238000010438 heat treatment Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to one kind to be based on (AlxGa1‑x)2O3The UV photodetector and preparation method thereof of material MSM structure, the preparation method include: to choose sapphire as substrate material；(Al is grown in the substrate material surfacexGa1‑x)2O3Form light absorbing layer；Asymmetric interdigital electrode is formed on the light absorbing layer surface using mask, to complete the preparation of the UV photodetector of the MSM structure.Pass through this preparation method, a kind of UV photodetector of available high Al contents generates induction to two ultraviolet spectral ranges so that two optical band gaps can be generated, be conducive to the same detector in the detection of two light-wave bands, improve the utilization of UV photodetector.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to one kind is based on (AlxGa1-x)2O3Material MSM structure it is ultraviolet
Photodetector and preparation method thereof.
Background technique
In recent years, with the development of science and technology, the maturation of photoelectric technology, UV photodetector civilian and military lead
Domain is widely used.Currently used UV photodetector is MOS (Metal-oxide-semicondutor) structure, this
The UV photodetector of structure can only all detect the signal in relatively simple spectral response range.However, for light wave point
Multiplexing technology, multispectral survey instrument and laser warning etc. require to detect simultaneously in two or more spectral response range
Optical signal；Therefore the UV photodetector for developing two or more spectral response range has future probes multi-wave signal
Have very important significance.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides one kind to be based on (AlxGa1-x)2O3Material
The UV photodetector and preparation method thereof of MSM structure.The technical problem to be solved in the present invention is real by the following technical programs
It is existing:
An embodiment provides one kind to be based on (AlxGa1-x)2O3The ultraviolet photoelectric detection of material MSM structure
The preparation method of device, comprising:
Sapphire is chosen as substrate material；
(Al is grown in the substrate material surfacexGa1-x)2O3Layer forms light absorbing layer；
Asymmetric interdigital electrode is formed on the light absorbing layer surface using mask, to complete the purple of the MSM structure
The preparation of outer photodetector.
In one embodiment of the invention, sapphire is chosen as substrate material, comprising:
C surface sapphire is chosen as substrate material.
In one embodiment of the invention, (Al is grown in the substrate material surfacexGa1-x)2O3Light absorbing layer is formed,
Include:
Argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using compound ceramic target as the first sputtering target material, (Al is grown in the substrate material surfacexGa1-x)2O3Shape
At light absorbing layer.
In one embodiment of the invention, the compound ceramic target is Ga2O3And Al2O3。
In one embodiment of the invention, Ga2O3Sputtering power be 100W；Al2O3Sputtering power be 50~90W.
In one embodiment of the invention, (AlxGa1-x)2O3The value range of middle x is 0.52~0.7.
In one embodiment of the invention, asymmetric interdigital electricity is formed on the light absorbing layer surface using mask
Pole, comprising:
Argon gas is passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using metal material as the second sputtering target material, asymmetric interdigital electrode is formed on the light absorbing layer surface.
In one embodiment of the invention, the metal material is Au, Al, Ni, Pt or Ti.
In one embodiment of the invention, the mask plate is asymmetric interdigital mask plate.
(Al is based on another embodiment of the present invention provides a kind ofxGa1-x)2O3The ultraviolet photoelectric of material MSM structure
Device is surveyed, the UV photodetector is prepared by the method any in above-described embodiment and formed；The ultraviolet photoelectric detection
Device includes: the substrate layer being distributed vertically from the bottom to top, light absorbing layer, asymmetric interdigital electrode.
Compared with prior art, beneficial effects of the present invention:
1, the present invention can control (Al due to using magnetic control co-sputtering methodxGa1-x)2O3The content of middle Al, ultraviolet photoelectric
Device is surveyed in the case where high Al component, (AlxGa1-x)2O3The separation of phase can occur, so that two optical band gaps can be generated, i.e., pair
Two ultraviolet spectral ranges generate induction, are conducive to the same detector in the detection of two light-wave bands, improve ultraviolet light photo
The utilization of detector；
2, UV photodetector of the invention is due to using asymmetric interdigital mask, so that the electrode tool formed
There is asymmetry, it is different so as to cause the barrier height on both sides, thus confession electrical characteristics are formed, and largely mention
The high sensitivity of UV photodetector.
Detailed description of the invention
Fig. 1 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The UV photodetector of material MSM structure
Preparation method flow diagram；
Fig. 2 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The UV photodetector of material MSM structure
Cross section structure schematic diagram；
Fig. 3 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The UV photodetector of material MSM structure
Overlooking structure diagram；
Fig. 4 is provided in an embodiment of the present invention a kind of to prepare (AlxGa1-x)2O3Equipment structure chart；
Fig. 5 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The UV photodetector of material MSM structure
Interdigital mask structural schematic diagram.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one:
MSM structure refers to that metal-semiconductor-metal, the UV photodetector of MSM structure refer to that metal-is partly led
Body-metal mold UV photodetector.This structure is to form " back-to-back " by flat linearity interdigital electrode and semiconductor material
Double Schottky barriers.MSM type UV photodetector does not need to carry out p-type doping, has that responsiveness is high, speed is fast, with inclined
Bucklingization is small, preparation process is simple, low cost, is easy to the advantages that single-chip integration.
Referring to Figure 1, Fig. 1 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3Material MSM structure it is ultraviolet
The flow diagram of the preparation method of photodetector, this method comprises the following steps:
Step a: sapphire is chosen as substrate material；
Step b: (Al is grown in the substrate material surfacexGa1-x)2O3Form light absorbing layer；
Step c: forming asymmetric interdigital electrode on the light absorbing layer surface using mask, to complete the MSM knot
The preparation of the UV photodetector of structure.
In a specific embodiment, c surface sapphire is chosen as substrate material.
In a specific embodiment, step b may comprise steps of:
Step b1: argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Step b2: it using compound ceramic target as the first sputtering target material, is grown in the substrate material surface
(AlxGa1-x)2O3Form light absorbing layer.
Wherein, the compound ceramic target is Ga2O3And Al2O3。
In a specific embodiment, Ga2O3Sputtering power be 100W；Al2O3Sputtering power be 50~90W.
In a specific embodiment, (AlxGa1-x)2O3The value range of middle x is 0.52~0.7.
In a specific embodiment, step c may comprise steps of:
Step c1: argon gas is passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Step c2: using metal material as the second sputtering target material, asymmetric interdigital electricity is formed on the light absorbing layer surface
Pole.
Wherein, the metal material is Au, Al, Ni, Pt or Ti.
In a specific embodiment, the second sputtering target material is made of two different metal materials.
In a specific embodiment, the mask plate is asymmetric interdigital mask plate.
Fig. 2 and Fig. 3 are referred to, Fig. 2 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3Material MSM structure
UV photodetector cross section structure schematic diagram；Fig. 3 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3Material
Expect the overlooking structure diagram of the UV photodetector of MSM structure.The UV photodetector includes: substrate layer 1, light absorption
Layer 2, asymmetric interdigital electrode 3.The vertical distribution from the bottom to top in order of substrate layer 1, light absorbing layer 2, asymmetric interdigital electrode 3,
Multilayered structure is formed, UV photodetector is constituted.
The embodiment of the present invention, can be by controlling Al2O3Sputtering power to controlling (AlxGa1-x)2O3The content of middle Al,
(the Al of high Al contentsxGa1-x)2O3The separation of phase can occur, so that two optical band gaps can be generated, i.e., to two ultraviolet spectra models
Enclose generation induction.In addition, causing the barrier height on both sides different due to the asymmetry of electrode, to form self-powered spy
Property, and largely improve the sensitivity of UV photodetector.
Embodiment two:
The present embodiment on the basis of the above embodiments, carries out the preparation method of UV photodetector of the invention detailed
Thin description.
Step 1: the Sapphire Substrate of twin polishing is chosen, with a thickness of 500 μm.
Substrate selects sapphire reason: firstly, the production technology of Sapphire Substrate is mature, device quality is preferable；Secondly,
Sapphire stability is fine, can be used in higher temperature growth processes；Finally, sapphire high mechanical strength, is easily handled
And cleaning.
Further, select c surface sapphire as substrate material.The face c refers to sapphire [0001] crystal orientation, sapphire edge
[0001] technical maturity of crystal orientation growth, advantage of lower cost, physical and chemical performance are stablized.
Step 2: Ga being sputtered by magnetron co-sputtering on a sapphire substrate2O3And Al2O3, to grow (AlxGa1-x)2O3Obtain light absorbing layer.
Specifically, argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
With Ga2O3And Al2O3As the first sputtering target material, (Al is grown in the substrate material surfacexGa1-x)2O3Form light
Absorbed layer.
Refer to Fig. 4, Fig. 4 is provided in an embodiment of the present invention a kind of to prepare (AlxGa1-x)2O3Equipment structure chart.This sets
Standby includes: to provide the radio-frequency power supply 4 of power supply for the first sputtering target material, Target material tray 5, the first sputtering target material baffle 6, air inlet 7, connect
Connect pump-line 8, substrate baffle plate 9, the pallet 10 of sample substrate placement, base heating dish 11, whirler 12 of vacuum system.Rotation
Favourable turn 12 is used to ensure the uniformity of deposition film.
Wherein, the Ga that the first sputtering target material selects mass percent to be more than or equal to 99.99%2O3And Al2O3, sputtering power
Respectively 100W and 90W, oxygen and argon gas using mass percent more than or equal to 99.999% are passed through sputtering as sputter gas
Chamber before sputtering, vacuumizes the sputter chamber of magnetron sputtering apparatus, is then passed through argon gas by air inlet 7 and is cleaned,
Sapphire Substrate is placed on pallet 10, base heating dish 11 is begun to warm up, and is then passed through oxygen by air inlet 7 and is started to sink
Product, the first sputtering target material is placed at Target material tray 5, connects radio-frequency power supply 4, is 4 × 10 in vacuum degree-4~6 × 10-4Pa, argon gas
Flow is 20cm3Under conditions of/s, oxygen flow 5cm3/s, target cardinal distance are 5cm, by changing Al2O3The sputtering function of target
Rate obtains the (Al with high component AlxGa1-x)2O3Layer material, while the uniform of deposition film is ensured using whirler 12
Property, to form light absorbing layer.
In sputtering process, substrate layer temperature is 610 DEG C, and deposition sputtering time is 1h, is then carried out under the conditions of 750 DEG C former
Position annealing 2h.
In a specific embodiment, by changing Al2O3The sputtering power of target can make (AlxGa1-x)2O3Middle x's
Value range is 0.52~0.7.Al content belongs to high Al content within this range, in the case where high Al contents,
(AlxGa1-x)2O3It can occur mutually to separate, so that induction can be generated to two light-wave bands.
Step 3: referring to Fig. 5, Fig. 5 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3Material MSM structure
The interdigital mask structural schematic diagram of UV photodetector.It is not right in light absorbing layer surface formation using interdigital mask
Claim interdigital electrode, to complete the preparation of the UV photodetector of the MSM structure.
Wherein, the mask plate is asymmetric interdigital mask plate.
Using magnetron sputtering technique in (AlxGa1-x)2O3Material layer upper surface magnetron sputtering interdigital electrode material, wherein the
Two sputtering target materials select mass percent to be more than or equal to 99.99% Au target and Al target respectively, are greater than with mass percent
Argon gas equal to 99.999% is passed through sputtering chamber as sputter gas, before sputtering, vacuumizes to magnetron sputtering apparatus cavity,
Then it is cleaned with argon gas.It is 4 × 10 in vacuum degree-4~6 × 10-4Pa, argon flow 20cm3/ s, target cardinal distance are 5cm
Sputtering forms asymmetric interdigital electrode under conditions of being 1A with operating current.
Wherein, the thickness of Au and Al is all 120nm.Au and Al can also be replaced by Ni, Pt or Ti.
The size of interdigital mask plate are as follows: refer to long L be 2800 μm, the first finger beam d1 is 400 μm, the second finger beam d2 is 200 μm,
Refer to that spacing W is 200 μm.
In a specific embodiment, deposition interdigital electrode does not have sequencing, can specifically treat as the case may be.
But it must ensure that two width electrode materials of interdigital electrode are different；Here width electrode is the finger according to interdigital electrode
What width determined, the wide referred to as wide electrode of finger beam, the narrow referred to as narrow electrode of finger beam.
Compared with prior art, the invention has the following advantages that
1, the embodiment of the present invention changes Al by magnetic control co-sputtering method2O3The watt level of target, to obtain high Al contents
(AlxGa1-x)2O3Layer material separates it mutually, to prepare Two stage ultraviolet electric explorer part；
2, the UV photodetector of preparation of the embodiment of the present invention has asymmetric interdigital electrode, asymmetric interdigital electricity
It will form additional potential difference between pole, there is internal potential difference to generate internal quasi-electric field, it is not only advantageous under the action of electric field force
In the separation of photo-generate electron-hole pair, and energy can be provided for UV photodetector, form a kind of self-powered detection
Device, and largely improve the sensitivity of UV photodetector.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. one kind is based on (AlxGa1-x)2O3The preparation method of the UV photodetector of material MSM structure, which is characterized in that packet
It includes:
Sapphire is chosen as substrate material；
(Al is grown in the substrate material surfacexGa1-x)2O3Form light absorbing layer；
Asymmetric interdigital electrode is formed on the light absorbing layer surface using mask, to complete the ultraviolet light of the MSM structure
The preparation of electric explorer.
2. the method according to claim 1, wherein choosing sapphire as substrate material, comprising:
C surface sapphire is chosen as substrate material.
3. the method according to claim 1, wherein growing (Al in the substrate material surfacexGa1-x)2O3Shape
At light absorbing layer, comprising:
Argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using compound ceramic target as the first sputtering target material, (Al is grown in the substrate material surfacexGa1-x)2O3Form light
Absorbed layer.
4. according to the method described in claim 3, it is characterized in that, the compound ceramic target is Ga2O3And Al2O3。
5. according to the method described in claim 3, it is characterized in that, Ga2O3Sputtering power be 100W；Al2O3Sputtering power
For 50~90W.
6. the method according to claim 1, wherein (AlxGa1-x)2O3The value range of middle x is 0.52~0.7.
7. according to the method described in claim 1, it is characterized by: not right in light absorbing layer surface formation using mask
Claim interdigital electrode, comprising:
Argon gas is passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using metal material as the second sputtering target material, asymmetric interdigital electrode is formed on the light absorbing layer surface.
8. the method according to the description of claim 7 is characterized in that the metal material is Au, Al, Ni, Pt or Ti.
9. the method according to the description of claim 7 is characterized in that the mask plate is asymmetric interdigital mask plate.
10. one kind is based on (AlxGa1-x)2O3The UV photodetector of material MSM structure, which is characterized in that the ultraviolet light photo
Detector is prepared by method according to any one of claims 1 to 9 and is formed；The UV photodetector includes: from the bottom to top
Substrate layer (1), the light absorbing layer (2), asymmetric interdigital electrode (3) being distributed vertically.
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| CN110581125A (en) * | 2019-09-19 | 2019-12-17 | 中南大学 | integrated CMOS detector and preparation process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004288758A (en) * | 2003-03-20 | 2004-10-14 | Fuji Xerox Co Ltd | Element assembly, plate-like element, sensor, and method of manufacturing sensor |
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| CN109301002B (en) | 2020-06-19 |
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