CN109326680A - Based on (AlxGa1-x)2O3Two stage ultraviolet electric explorer of material and preparation method thereof - Google Patents
Based on (AlxGa1-x)2O3Two stage ultraviolet electric explorer of material and preparation method thereof Download PDFInfo
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- CN109326680A CN109326680A CN201810900315.XA CN201810900315A CN109326680A CN 109326680 A CN109326680 A CN 109326680A CN 201810900315 A CN201810900315 A CN 201810900315A CN 109326680 A CN109326680 A CN 109326680A
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000013077 target material Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000006698 induction Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention relates to one kind to be based on (AlxGa1‑x)2O3Two stage ultraviolet electric explorer of material and preparation method thereof, the preparation method include: to choose sapphire as substrate material；(Al is grown in the substrate material surfacexGa1‑x)2O3Form light absorbing layer；Using mask, sputter to form symmetrical interdigital electrode on the light absorbing layer surface using Au, to complete the preparation of the Two stage ultraviolet electric explorer.Pass through this preparation method, a kind of UV photodetector of available high Al contents generates induction to two ultraviolet spectral ranges so that two optical band gaps can be generated, be conducive to the same detector in the detection of two light-wave bands, improve the utilization of UV photodetector.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to one kind is based on (AlxGa1-x)2O3The two waveband of material is ultraviolet
Photodetector and preparation method thereof.
Background technique
In recent years, with the development of science and technology, the maturation of photoelectric technology, UV photodetector civilian and military lead
Domain is widely used.Currently used UV photodetector is MOS (Metal-oxide-semicondutor) structure, this
The UV photodetector of structure can only all detect the signal in relatively simple spectral response range.However, for light wave point
Multiplexing technology, multispectral survey instrument and laser warning etc. require to detect simultaneously in two or more spectral response range
Optical signal；Therefore develop the UV photodetector of the multispectral response range of two or more to future probes multi-wave signal
Tool has very important significance.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides one kind to be based on (AlxGa1-x)2O3Material
Two stage ultraviolet electric explorer and preparation method thereof.The technical problem to be solved in the present invention is real by the following technical programs
It is existing:
An embodiment provides one kind to be based on (AlxGa1-x)2O3The Two stage ultraviolet electric explorer of material
Preparation method, comprising:
Sapphire is chosen as substrate material；
(Al is grown in the substrate material surfacexGa1-x)2O3Layer forms light absorbing layer；
Using mask, sputter to form symmetrical interdigital electrode on the light absorbing layer surface using Au, it is described double to complete
The preparation of wave band UV photodetector.
In one embodiment of the invention, sapphire is chosen as substrate material, comprising:
C surface sapphire is chosen as substrate material.
In one embodiment of the invention, (Al is grown in the substrate material surfacexGa1-x)2O3Light absorbing layer is formed,
Include:
Argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using compound ceramic target as the first sputtering target material, (Al is grown in the substrate material surfacexGa1-x)2O3Shape
At light absorbing layer.
In one embodiment of the invention, the compound ceramic target is Ga2O3And Al2O3。
In one embodiment of the invention, Ga2O3Sputtering power be 100W；Al2O3Sputtering power be 50~90W.
In one embodiment of the invention, (AlxGa1-x)2O3The value range of middle x is 0.52~0.7.
In one embodiment of the invention, it using mask, sputters to be formed pair on the light absorbing layer surface using Au
Claim interdigital electrode, comprising:
Argon gas is passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using Au as the second sputtering target material, sputter to form symmetrical interdigital electrode on the light absorbing layer surface.
In one embodiment of the invention, the mask plate is symmetrical interdigital mask plate.
(Al is based on another embodiment of the present invention provides a kind ofxGa1-x)2O3The Two stage ultraviolet electrical resistivity survey of material is surveyed
Device, the UV photodetector are prepared by the method any in above-described embodiment and are formed；The UV photodetector
It include: the substrate layer being distributed vertically from the bottom to top, light absorbing layer, asymmetric interdigital electrode.
Compared with prior art, beneficial effects of the present invention:
The present invention is splashed altogether using magnetic control can control (AlxGa1-x)2O3The content of middle Al, UV photodetector is in high Al
In the case where component, (AlxGa1-x)2O3The separation of phase can occur, so that two optical band gaps can be generated, i.e., to two ultraviolet lights
Spectral limit generates induction, is conducive to the same detector in the detection of two light-wave bands, improves the benefit of UV photodetector
With.
Detailed description of the invention
Fig. 1 is one kind (Al provided in an embodiment of the present inventionxGa1-x)2O3The system of the Two stage ultraviolet electric explorer of material
The flow diagram of Preparation Method；
Fig. 2 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The Two stage ultraviolet electric explorer of material
Cross section structure schematic diagram；
Fig. 3 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The Two stage ultraviolet electric explorer of material
Overlooking structure diagram；
Fig. 4 is provided in an embodiment of the present invention a kind of to prepare (AlxGa1-x)2O3Equipment structure chart；
Fig. 5 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The Two stage ultraviolet electric explorer of material
Interdigital mask structural schematic diagram.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one:
Referring to Figure 1, Fig. 1 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The two waveband of material is ultraviolet
The flow diagram of the preparation method of photodetector, this method comprises the following steps:
Step a: sapphire is chosen as substrate material；
Step b: (Al is grown in the substrate material surfacexGa1-x)2O3Form light absorbing layer；
Step c: using mask, sputter to form symmetrical interdigital electrode on the light absorbing layer surface using Au, to complete
The preparation of the Two stage ultraviolet electric explorer.
The embodiment of the present invention forms the ultraviolet photoelectric detection of MSM (metal-semiconductor-metal) structure using interdigital electrode
Device；The UV photodetector of MSM structure does not need to carry out p-type doping, have responsiveness is high, speed is fast, it is small with bias variations,
Preparation process is simple, low cost, is easy to the advantages that single-chip integration.
In a specific embodiment, c surface sapphire is chosen as substrate material.
In a specific embodiment, step b may comprise steps of:
Step b1: argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Step b2: it using compound ceramic target as the first sputtering target material, is grown in the substrate material surface
(AlxGa1-x)2O3Form light absorbing layer.
Wherein, the compound ceramic target can be Ga2O3And Al2O3。
In a specific embodiment, Ga2O3Sputtering power be 100W；Al2O3Sputtering power be 50~90W.
In a specific embodiment, (AlxGa1-x)2O3The value range of middle x is 0.52~0.7.
In a specific embodiment, step c may comprise steps of:
Step c1: argon gas is passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Step c2: it using Au as the second sputtering target material, sputters to form symmetrical interdigital electrode on the light absorbing layer surface.
Wherein, splash-proofing sputtering metal Au also could alternatively be Al, Ni, Pt or Ti.
In a specific embodiment, the mask plate is symmetrical interdigital mask plate.
Fig. 2 and Fig. 3 are referred to, Fig. 2 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The two waveband of material
The cross section structure schematic diagram of UV photodetector；Fig. 3 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3Material
Two stage ultraviolet electric explorer overlooking structure diagram.The UV photodetector includes: substrate layer 1, light absorbing layer
2, symmetrical interdigital electrode 3.The vertical distribution from the bottom to top in order of substrate layer 1, light absorbing layer 2, symmetrical interdigital electrode 3, forms more
Layer structure, constitutes UV photodetector.
The embodiment of the present invention, can be by controlling Al2O3Sputtering power to controlling (AlxGa1-x)2O3The content of middle Al,
(the Al of high Al componentxGa1-x)2O3The separation of phase can occur, so that two optical band gaps can be generated, i.e., to two ultraviolet spectra models
Generation induction is enclosed, is conducive to the same UV photodetector in the detection of two light-wave bands, improves ultraviolet photoelectric detection
The utilization of device.
Embodiment two:
The present embodiment on the basis of the above embodiments, carries out the preparation method of UV photodetector of the invention detailed
Thin description.
Step 1: the Sapphire Substrate of twin polishing is chosen, with a thickness of 500 μm.
Substrate selects sapphire reason: firstly, the production technology of Sapphire Substrate is mature, device quality is preferable；Secondly,
Sapphire stability is fine, can be used in higher temperature growth processes；Finally, sapphire high mechanical strength, is easily handled
And cleaning.
Further, select c surface sapphire as substrate material.The face c refers to sapphire [0001] crystal orientation, sapphire edge
[0001] technical maturity of crystal orientation growth, advantage of lower cost, physical and chemical performance are stablized.
Step 2: Ga being sputtered by magnetron co-sputtering on a sapphire substrate2O3And Al2O3, to grow (AlxGa1-x)2O3Obtain light absorbing layer.
Specifically, argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
With Ga2O3And Al2O3As the first sputtering target material, (Al is grown in the substrate material surfacexGa1-x)2O3Form light
Absorbed layer.
Refer to Fig. 4, Fig. 4 is provided in an embodiment of the present invention a kind of to prepare (AlxGa1-x)2O3Equipment structure chart.This sets
Standby includes: to provide the radio-frequency power supply 4 of power supply for the first sputtering target material, Target material tray 5, the first sputtering target material baffle 6, air inlet 7, connect
Connect pump-line 8, substrate baffle plate 9, the pallet 10 of sample substrate placement, base heating dish 11, whirler 12 of vacuum system.Rotation
Favourable turn 12 is used to ensure the uniformity of deposition film.
Wherein, the Ga that the first sputtering target material selects mass percent to be more than or equal to 99.99%2O3And Al2O3, sputtering power
Respectively 100W and 90W, oxygen and argon gas using mass percent more than or equal to 99.999% are passed through sputtering as sputter gas
Chamber before sputtering, vacuumizes the sputter chamber of magnetron sputtering apparatus, is then passed through argon gas by air inlet 7 and is cleaned,
Sapphire Substrate is placed on pallet 10, base heating dish 11 is begun to warm up, and is then passed through oxygen by air inlet 7 and is started to sink
Product, the first sputtering target material is placed at Target material tray 5, connects radio-frequency power supply 4, is 4 × 10 in vacuum degree-4~6 × 10-4Pa, argon gas
Flow is 20cm3/ s, oxygen flow 5cm3Under conditions of/s, target cardinal distance are 5cm, by changing Al2O3The sputtering function of target
Rate obtains the (Al with high component AlxGa1-x)2O3Layer material, while the uniform of deposition film is ensured using whirler 12
Property, to form light absorbing layer.
In sputtering process, substrate layer temperature is 610 DEG C, and deposition sputtering time is 1h, is then carried out under the conditions of 750 DEG C former
Position annealing 2h.
In a specific embodiment, by changing Al2O3The sputtering power of target can make (AlxGa1-x)2O3Middle x's
Value range is 0.52~0.7.Al content belongs to high Al content within this range, in the case where high Al contents,
(AlxGa1-x)2O3It can occur mutually to separate, so that induction can be generated to two light-wave bands.
Step 3: referring to Fig. 5, Fig. 5 is provided in an embodiment of the present invention a kind of based on (AlxGa1-x)2O3The double wave of material
The interdigital mask structural schematic diagram of section UV photodetector.Using interdigital mask, using Au in the light absorbing layer table
Face sputters to form symmetrical interdigital electrode, to complete the preparation of the Two stage ultraviolet electric explorer.
Using magnetron sputtering technique in the (Al with high component AlxGa1-x)2O3Material layer upper surface magnetron sputtering fork
Refer to electrode material, wherein the Au target that the second sputtering target material selects mass percent to be more than or equal to 99.99% respectively, with quality
Argon gas of the percentage more than or equal to 99.999% is passed through sputtering chamber as sputter gas, before sputtering, to magnetron sputtering apparatus cavity
It is vacuumized, is then cleaned with argon gas.It is 4 × 10 in vacuum degree-4~6 × 10-4Pa, argon flow 20cm3/ s, target
Material cardinal distance be 5cm and operating current be 1A under conditions of sputtering form asymmetric interdigital electrode.
Wherein, Au is with a thickness of 120nm；Au can also be replaced by Al, Ni, Pt or Ti.
The size of interdigital mask plate are as follows: refer to that long L is 2800 μm, finger beam d is 200 μm, refers to spacing W is 200 μm.
Compared with prior art, the invention has the following advantages that
The embodiment of the present invention changes Al by magnetic control co-sputtering method2O3The watt level of target, to obtain high Al contents
(AlxGa1-x)2O3Layer material separates it mutually, to prepare two waveband ultraviolet detector；It is same to be conducive to
UV photodetector while detecting multiple signal in band in the detection of multiple wave bands, improves the utilization of UV photodetector.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. one kind is based on (AlxGa1-x)2O3The preparation method of the Two stage ultraviolet electric explorer of material, which is characterized in that packet
It includes:
Sapphire is chosen as substrate material；
(Al is grown in the substrate material surfacexGa1-x)2O3Form light absorbing layer；
Using mask, sputter to form symmetrical interdigital electrode on the light absorbing layer surface using Au, to complete the two waveband
The preparation of UV photodetector.
2. the method according to claim 1, wherein choosing sapphire as substrate material, comprising:
C surface sapphire is chosen as substrate material.
3. the method according to claim 1, wherein growing (Al in the substrate material surfacexGa1-x)2O3Shape
At light absorbing layer, comprising:
Argon gas and oxygen are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using compound ceramic target as the first sputtering target material, (Al is grown in the substrate material surfacexGa1-x)2O3Form light
Absorbed layer.
4. according to the method described in claim 3, it is characterized in that, the compound ceramic target is Ga2O3And Al2O3。
5. according to the method described in claim 3, it is characterized in that, Ga2O3Sputtering power be 100W；Al2O3Sputtering power
For 50~90W.
6. the method according to claim 1, wherein (AlxGa1-x)2O3The value range of middle x is 0.52~0.7.
7. according to the method described in claim 1, it is characterized by: using mask, using Au on the light absorbing layer surface
Sputtering forms symmetrical interdigital electrode, comprising:
Argon gas is passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using Au as the second sputtering target material, sputter to form symmetrical interdigital electrode on the light absorbing layer surface.
8. the method according to the description of claim 7 is characterized in that the mask plate is symmetrical interdigital mask plate.
9. one kind is based on (AlxGa1-x)2O3The Two stage ultraviolet electric explorer of material, which is characterized in that the ultraviolet photoelectric
Survey device is prepared by method according to any one of claims 1 to 8 to be formed；The UV photodetector includes: perpendicular from the bottom to top
Substrate layer (1), the light absorbing layer (2), asymmetric interdigital electrode (3) being directly distributed.
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| CN201810900315.XA CN109326680B (en) | 2018-08-09 | 2018-08-09 | Based on (Al)xGa1-x)2O3Dual-band ultraviolet photoelectric detector of material and preparation method thereof |
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- 2018-08-09 CN CN201810900315.XA patent/CN109326680B/en active Active
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| JP2004288758A (en) * | 2003-03-20 | 2004-10-14 | Fuji Xerox Co Ltd | Element assembly, plate-like element, sensor, and method of manufacturing sensor |
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| Title |
|---|
| OSHIMA, T ET AL.: "β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
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