CN109326680B - Based on (Al)xGa1-x)2O3Dual-band ultraviolet photoelectric detector of material and preparation method thereof - Google Patents
Based on (Al)xGa1-x)2O3Dual-band ultraviolet photoelectric detector of material and preparation method thereof Download PDFInfo
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- CN109326680B CN109326680B CN201810900315.XA CN201810900315A CN109326680B CN 109326680 B CN109326680 B CN 109326680B CN 201810900315 A CN201810900315 A CN 201810900315A CN 109326680 B CN109326680 B CN 109326680B
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 230000031700 light absorption Effects 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000005477 sputtering target Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000003054 catalyst Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract description 3
- 238000002211 ultraviolet spectrum Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a catalyst based on (Al)xGa1‑x)2O3A dual-band ultraviolet photoelectric detector of material and a preparation method thereof are provided, wherein the preparation method comprises the following steps: selecting sapphire as a substrate material; growing (Al) on the surface of the substrate materialxGa1‑x)2O3Forming a light absorption layer; and forming symmetrical interdigital electrodes on the surface of the light absorption layer by sputtering Au by adopting a mask plate so as to finish the preparation of the dual-band ultraviolet photoelectric detector. By the preparation method, the ultraviolet photoelectric detector with high Al component can be obtained, so that two optical band gaps can be generated, namely, induction is generated in two ultraviolet spectrum ranges, detection of the same detector in two light wave bands is facilitated, and utilization of the ultraviolet photoelectric detector is improved.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a catalyst based on (Al)xGa1-x)2O3A dual-band ultraviolet photoelectric detector made of material and its preparing process are disclosed.
Background
In recent years, with the development of scientific technology and the maturity of photoelectric technology, the ultraviolet photoelectric detector is widely applied in the civil and military fields. Currently, the commonly used ultraviolet photodetectors are of MOS (metal-oxide-semiconductor) structure, and all of the ultraviolet photodetectors of this structure can only detect signals within a relatively single spectral response range. However, for optical wavelength division multiplexing, multispectral instrumentation, laser warning, etc., it is desirable to be able to detect optical signals in two or more spectral response ranges simultaneously; therefore, the development of ultraviolet photodetectors with two or more multispectral response ranges has great significance for detecting multiband signals in the future.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a catalyst based on (Al)xGa1-x)2O3A dual-band ultraviolet photoelectric detector made of material and its preparing process are disclosed. The technical problem to be solved by the invention is realized by the following technical scheme:
one embodiment of the present invention provides a composition based on (Al)xGa1-x)2O3The preparation method of the material dual-band ultraviolet photodetector comprises the following steps:
selecting sapphire as a substrate material;
growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorption layer;
and forming symmetrical interdigital electrodes on the surface of the light absorption layer by sputtering Au by adopting a mask plate so as to finish the preparation of the dual-band ultraviolet photoelectric detector.
In one embodiment of the present invention, selecting sapphire as the substrate material comprises:
c-plane sapphire is selected as a substrate material.
In one embodiment of the invention, the (Al) is grown on the surface of the substrate materialxGa1-x)2O3Forming a light absorbing layer comprising:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and then introducing argon and oxygen;
growing (Al) on the surface of the substrate material by taking a compound ceramic target as a first sputtering targetxGa1-x)2O3A light absorbing layer is formed.
In one embodiment of the present invention, the compound ceramic target is Ga2O3And Al2O3。
In one embodiment of the present invention, Ga2O3The sputtering power of (2) is 100W; al (Al)2O3The sputtering power is 50-90W.
In one embodiment of the present invention, (Al)xGa1-x)2O3The value range of the x is 0.52-0.7.
In an embodiment of the present invention, forming symmetric interdigital electrodes on the surface of the light absorption layer by sputtering Au using a mask includes:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and introducing argon;
and taking Au as a second sputtering target material, and sputtering and forming the symmetrical interdigital electrode on the surface of the light absorption layer.
In one embodiment of the present invention, the mask is a symmetric interdigital mask.
Another embodiment of the present invention provides a catalyst based on (Al)xGa1-x)2O3A two-band ultraviolet photodetector of material, the ultraviolet photodetector being formed by the method of any of the above embodiments; the ultraviolet photodetector includes: the array substrate comprises a substrate layer, a light absorption layer and asymmetric interdigital electrodes which are vertically distributed from bottom to top.
Compared with the prior art, the invention has the beneficial effects that:
the invention can control (Al) by utilizing magnetic control co-sputteringxGa1-x)2O3The content of Al in the product is low, and the ultraviolet photoelectric detector has high Al contentxGa1-x)2O3The phase separation can occur, so that two optical band gaps can be generated, namely, the induction is generated in two ultraviolet spectrum ranges, the detection of the same detector in two light wave bands is facilitated, and the utilization rate of the ultraviolet photoelectric detector is improved.
Drawings
FIG. 1 shows an embodiment of the present invention, whereinxGa1-x)2O3The flow schematic diagram of the preparation method of the material dual-waveband ultraviolet photoelectric detector;
FIG. 2 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The cross-sectional structure of the material dual-band ultraviolet photoelectric detector is schematic;
FIG. 3 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3A schematic view of a two-band ultraviolet photodetector of a material from above;
FIG. 4 shows a preparation process (Al) according to an embodiment of the present inventionxGa1-x)2O3The apparatus structural diagram of (1);
FIG. 5 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The interdigital mask plate structure of the material dual-waveband ultraviolet photoelectric detector is schematic.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
The first embodiment is as follows:
referring to fig. 1, fig. 1 shows an embodiment of the present invention, wherein the embodiment of the present invention provides a liquid crystal display device based on (Al)xGa1-x)2O3The flow schematic diagram of the preparation method of the material dual-waveband ultraviolet photodetector comprises the following steps:
step a: selecting sapphire as a substrate material;
step b: growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorption layer;
step c: and forming symmetrical interdigital electrodes on the surface of the light absorption layer by sputtering Au by adopting a mask plate so as to finish the preparation of the dual-band ultraviolet photoelectric detector.
The embodiment of the invention forms the ultraviolet photoelectric detector with an MSM (metal-semiconductor-metal) structure by utilizing the interdigital electrode; the ultraviolet photoelectric detector with the MSM structure does not need to carry out p-type doping, and has the advantages of high responsivity, high speed, small change along with bias voltage, simple preparation process, low manufacturing cost, easy monolithic integration and the like.
In one embodiment, c-plane sapphire is chosen as the substrate material.
In a specific embodiment, step b may comprise the steps of:
step b 1: vacuumizing a sputtering cavity of the magnetron sputtering equipment and then introducing argon and oxygen;
step b 2: growing (Al) on the surface of the substrate material by taking a compound ceramic target as a first sputtering targetxGa1-x)2O3A light absorbing layer is formed.
Wherein the compound ceramic target material can be Ga2O3And Al2O3。
In one embodiment, Ga2O3The sputtering power of (2) is 100W; al (Al)2O3The sputtering power is 50-90W.
In a specific embodiment, (Al)xGa1-x)2O3The value range of the x is 0.52-0.7.
In a specific embodiment, step c may comprise the steps of:
step c 1: vacuumizing a sputtering cavity of the magnetron sputtering equipment and introducing argon;
step c 2: and taking Au as a second sputtering target material, and sputtering and forming the symmetrical interdigital electrode on the surface of the light absorption layer.
Wherein, the sputtering metal Au can be replaced by Al, Ni, Pt or Ti.
In one embodiment, the mask is a symmetric interdigital mask.
Referring to fig. 2 and 3, fig. 2 shows an embodiment of the present invention, wherein (Al) -basedxGa1-x)2O3The cross-sectional structure of the material dual-band ultraviolet photoelectric detector is schematic; FIG. 3 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The material is a schematic diagram of a top view structure of a two-waveband ultraviolet photoelectric detector. The ultraviolet photodetector includes: substrate layer 1, light absorption layer 2, symmetrical interdigital electrode 3. Substrate layer 1, light absorbing layer2. The symmetrical interdigital electrodes 3 are vertically distributed from bottom to top in sequence to form a multilayer structure, and the ultraviolet photoelectric detector is formed.
According to the embodiment of the invention, Al can be controlled2O3Thereby controlling the sputtering power of (Al)xGa1-x)2O3Medium Al content, high Al content (Al)xGa1-x)2O3The phase separation can occur, so that two optical band gaps can be generated, namely, the induction is generated in two ultraviolet spectral ranges, the detection of the same ultraviolet photoelectric detector in two light wave bands is facilitated, and the utilization rate of the ultraviolet photoelectric detector is improved.
Example two:
in this embodiment, a method for manufacturing the ultraviolet photodetector of the present invention is described in detail based on the above embodiments.
Step 1: a sapphire substrate with a double-side polished thickness of 500 μm was selected.
The reason why sapphire is used as the substrate: firstly, the production technology of the sapphire substrate is mature, and the quality of devices is good; secondly, the sapphire has good stability and can be applied to the high-temperature growth process; finally, sapphire is mechanically strong and easy to handle and clean.
Furthermore, c-plane sapphire is selected as a substrate material. The c surface refers to the [0001] crystal orientation of the sapphire, the process for growing the sapphire along the [0001] crystal orientation is mature, the cost is relatively low, and the physical and chemical properties are stable.
Step 2: sputtering Ga on sapphire substrate by magnetron co-sputtering method2O3And Al2O3Thereby growing (Al)xGa1-x)2O3The light absorbing layer was obtained.
Specifically, a sputtering cavity of the magnetron sputtering equipment is vacuumized and then argon and oxygen are introduced;
with Ga2O3And Al2O3As a first sputtering target, growing (Al) on the surface of the substrate materialxGa1-x)2O3A light absorbing layer is formed.
Referring to FIG. 4, FIG. 4 shows a preparation method (Al) according to an embodiment of the present inventionxGa1-x)2O3The apparatus of (1). The apparatus comprises: the device comprises a radio frequency power supply 4 for supplying power to a first sputtering target, a target holder 5, a first sputtering target baffle 6, an air inlet 7, an air exhaust pipeline 8 connected with a vacuum system, a substrate baffle 9, a tray 10 for placing a sample substrate, a base heating plate 11 and a rotating machine 12. The rotating machine 12 is used to secure uniformity of the deposited thin film.
Wherein the first sputtering target material selects Ga with the mass percent of more than or equal to 99.99 percent2O3And Al2O3The sputtering power is respectively 100W and 90W, oxygen and argon with the mass percent of more than or equal to 99.999 percent are used as sputtering gases to be introduced into a sputtering cavity, before sputtering, the sputtering cavity of magnetron sputtering equipment is vacuumized, then the argon is introduced through an air inlet 7 to be cleaned, a sapphire substrate is placed on a tray 10, a base heating plate 11 starts to be heated, then the oxygen is introduced through the air inlet 7 to start deposition, a first sputtering target material is placed at a target material support 5, a radio frequency power supply 4 is switched on, and the vacuum degree is 4 multiplied by 10-4～6×10-4Pa, argon flow 20cm3The flow rate of oxygen is 5cm3Changing Al under the condition that the base distance of the target is 5cm2O3Sputtering power of the target to obtain (Al) with high composition AlxGa1-x)2O3The layer material is formed while the uniformity of the deposited film is secured by the rotating machine 12, thereby forming the light absorbing layer.
In the sputtering process, the temperature of the substrate layer is 610 ℃, the deposition sputtering time is 1h, and then in-situ annealing is carried out for 2h at 750 ℃.
In one embodiment, by altering Al2O3The sputtering power of the target material can be adjusted to (Al)xGa1-x)2O3The value range of the x is 0.52-0.7. The Al content in this range is a high Al content, in the case of a high Al component, (Al)xGa1-x)2O3Phase separation occurs and thus, the two optical wave bands are induced.
And step 3: referring to fig. 5, fig. 5 shows an embodiment of the present invention, wherein (Al) -basedxGa1-x)2O3The interdigital mask plate structure of the material dual-waveband ultraviolet photoelectric detector is schematic. And forming symmetrical interdigital electrodes on the surface of the light absorption layer by sputtering Au by adopting an interdigital mask so as to finish the preparation of the dual-band ultraviolet photoelectric detector.
Using magnetron sputtering process to deposit (Al) with high Al componentxGa1-x)2O3And carrying out magnetron sputtering on the upper surface of the material layer to obtain the interdigital electrode material, wherein the second sputtering target material is an Au target material with the mass percent of more than or equal to 99.99%, argon with the mass percent of more than or equal to 99.999% is used as sputtering gas and introduced into a sputtering cavity, the cavity of the magnetron sputtering equipment is vacuumized before sputtering, and then the cleaning is carried out by using the argon. Under vacuum degree of 4X 10-4～6×10-4Pa, argon flow 20cm3And/s, sputtering under the conditions that the target base distance is 5cm and the working current is 1A to form an asymmetric interdigital electrode.
Wherein the thickness of Au is 120 nm; au may also be replaced by Al, Ni, Pt or Ti.
The size of the interdigital mask plate is as follows: the finger length L was 2800 μm, the finger width d was 200 μm, and the finger pitch W was 200 μm.
Compared with the prior art, the invention has the following advantages:
in the embodiment of the invention, Al is changed by a magnetron co-sputtering method2O3The power of the target material is adjusted to obtain (Al) with high Al componentxGa1-x)2O3Separating the layer materials to prepare the dual-waveband ultraviolet detector; thereby be favorable to the detection of same ultraviolet photoelectric detector at a plurality of wave bands, detect a plurality of signal wave bands simultaneously, improve ultraviolet photoelectric detector's utilization.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (5)
1. Based on (Al)xGa1-x)2O3The preparation method of the material dual-waveband ultraviolet photoelectric detector is characterized by comprising the following steps:
selecting sapphire as a substrate material;
adopting a magnetron sputtering process, taking a compound ceramic target as a first sputtering target, and growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorbing layer, wherein the Ga2O3The sputtering power of (1) is 100W, the Al2O3The sputtering power of (Al) is 50-90WxGa1-x)2O3The value range of the medium x is 0.52-0.7;
and forming a symmetrical interdigital electrode on the surface of the light absorption layer by using a symmetrical interdigital mask plate and sputtering Au to finish the preparation of the dual-band ultraviolet photoelectric detector.
2. The method of claim 1, wherein selecting sapphire as the substrate material comprises:
c-plane sapphire is selected as a substrate material.
3. The method of claim 1, wherein (Al) is grown on the substrate material surfacexGa1-x)2O3Forming a light absorbing layer comprising:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and then introducing argon and oxygen;
growing (Al) on the surface of the substrate material by taking a compound ceramic target as a first sputtering targetxGa1-x)2O3A light absorbing layer is formed.
4. The method of claim 1, wherein: adopting a mask plate, and utilizing Au to sputter on the surface of the light absorption layer to form a symmetrical interdigital electrode, comprising:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and introducing argon;
and taking Au as a second sputtering target material, and sputtering and forming the symmetrical interdigital electrode on the surface of the light absorption layer.
5. Based on (Al)xGa1-x)2O3A dual band UV photodetector of material, characterized in that the UV photodetector is produced by the method of any one of claims 1 to 4; the ultraviolet photodetector includes: the light absorption layer comprises a substrate layer (1), a light absorption layer (2) and symmetrical interdigital electrodes (3) which are vertically distributed from bottom to top.
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| JP2004288758A (en) * | 2003-03-20 | 2004-10-14 | Fuji Xerox Co Ltd | Element assembly, plate-like element, sensor, and method of manufacturing sensor |
| CN102694052B (en) * | 2011-03-22 | 2016-01-06 | 中国科学院微电子研究所 | Semiconductor device and method for manufacturing the same |
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|---|---|---|---|---|
| CN1677683A (en) * | 2005-04-27 | 2005-10-05 | 中国科学院上海技术物理研究所 | Ultraviolet dual wave-band gallium nitride detector |
| CN103474503A (en) * | 2013-09-30 | 2013-12-25 | 厦门大学 | Ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattices |
| CN103943720A (en) * | 2014-03-27 | 2014-07-23 | 中国科学院长春光学精密机械与物理研究所 | Self-driven oxygen zinc magnesium ultraviolet detector and preparing method thereof |
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| Title |
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| Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum;Yuan, SH et al.;《IEEE ELECTRON DEVICE LETTERS》;20180228;II. EXPERIMENTAL，附图1b * |
| Yuan, SH et al..Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum.《IEEE ELECTRON DEVICE LETTERS》.2018, * |
| β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy;Oshima, T et al.;《JAPANESE JOURNAL OF APPLIED PHYSICS》;20090706;070202-1页左栏第2段至070202-1页右栏第2段，附图1-3 * |
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