CN109326680B - Dual-band ultraviolet photodetector based on (AlxGa1-x)2O3 material and preparation method thereof - Google Patents
Dual-band ultraviolet photodetector based on (AlxGa1-x)2O3 material and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 230000031700 light absorption Effects 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000005477 sputtering target Methods 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 230000009977 dual effect Effects 0.000 claims 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 230000006698 induction Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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Abstract
本发明涉及一种基于(AlxGa1‑x)2O3材料的双波段紫外光电探测器及其制备方法，所述制备方法包括：选取蓝宝石作为衬底材料；在所述衬底材料表面生长(AlxGa1‑x)2O3形成光吸收层；采用掩模版，利用Au在所述光吸收层表面溅射形成对称叉指电极，以完成所述双波段紫外光电探测器的制备。通过这种制备方法，可以得到一种高Al组分的紫外光电探测器，从而会产生两个光学带隙，即对两个紫外光谱范围产生感应，有利于同一个探测器在两个光波波段的检测，提高紫外光电探测器的利用。
The invention relates to a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material and a preparation method thereof. The preparation method includes: selecting sapphire as a substrate material; growing (Al x Ga 1-x ) 2 O 3 to form a light absorption layer; using a mask, using Au to sputter on the surface of the light absorption layer to form symmetrical interdigital electrodes, to complete the preparation of the dual-band ultraviolet photodetector . Through this preparation method, an ultraviolet photodetector with high Al composition can be obtained, which can generate two optical band gaps, that is, induce induction in two ultraviolet spectral ranges, which is beneficial to the same detector in two optical wavebands. detection, improve the utilization of ultraviolet photodetectors.
Description
技术领域technical field
本发明属于微电子技术领域，具体涉及一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器及其制备方法。The invention belongs to the technical field of microelectronics, and in particular relates to a dual-band ultraviolet photodetector based on (AlxGa1 -x ) 2O3 material and a preparation method thereof.
背景技术Background technique
近年来，随着科学技术的发展、光电技术的成熟，紫外光电探测器在民用和军事领域得到了广泛的应用。目前常用的紫外光电探测器是MOS(金属-氧化物-半导体)结构，这种结构的紫外光电探测器都只能探测比较单一的光谱响应范围内的信号。然而，用于光波分复用技术、多光谱测量仪表以及激光警告等都需要能同时检测两个及以上光谱响应范围内的光信号；因此发展两个及以上多光谱响应范围的紫外光电探测器对未来探测多波段信号具有很重要的意义。In recent years, with the development of science and technology and the maturity of optoelectronic technology, ultraviolet photodetectors have been widely used in civil and military fields. Currently, the commonly used ultraviolet photodetectors are MOS (metal-oxide-semiconductor) structures, and the ultraviolet photodetectors of this structure can only detect signals in a relatively single spectral response range. However, for optical wavelength division multiplexing technology, multi-spectral measurement instruments, and laser warnings, it is necessary to simultaneously detect optical signals in two or more spectral response ranges; therefore, UV photodetectors with two or more multi-spectral response ranges are developed. It is of great significance for the future detection of multi-band signals.
发明内容SUMMARY OF THE INVENTION
为了解决现有技术中存在的上述问题，本发明提供了一种基于 (AlxGa1-x)2O3材料的双波段紫外光电探测器及其制备方法。本发明要解决的技术问题通过以下技术方案实现：In order to solve the above problems in the prior art, the present invention provides a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material and a preparation method thereof. The technical problem to be solved by the present invention is realized by the following technical solutions:
本发明的一个实施例提供了一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的制备方法，包括：An embodiment of the present invention provides a preparation method of a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material, including:
选取蓝宝石作为衬底材料；Select sapphire as the substrate material;
在所述衬底材料表面生长(AlxGa1-x)2O3层形成光吸收层；growing a (Al x Ga 1-x ) 2 O 3 layer on the surface of the substrate material to form a light absorption layer;
采用掩模版，利用Au在所述光吸收层表面溅射形成对称叉指电极，以完成所述双波段紫外光电探测器的制备。A reticle is used to form symmetrical interdigital electrodes by Au sputtering on the surface of the light absorbing layer, so as to complete the preparation of the dual-band ultraviolet photodetector.
在本发明的一个实施例中，选取蓝宝石作为衬底材料，包括：In one embodiment of the present invention, sapphire is selected as the substrate material, including:
选取c面蓝宝石作为衬底材料。Select c-plane sapphire as the substrate material.
在本发明的一个实施例中，在所述衬底材料表面生长(AlxGa1-x)2O3形成光吸收层，包括：In an embodiment of the present invention, growing (Al x Ga 1-x ) 2 O 3 on the surface of the substrate material to form a light absorbing layer includes:
对磁控溅射设备的溅射腔体进行抽真空后通入氩气和氧气；The sputtering chamber of the magnetron sputtering equipment is evacuated and argon and oxygen are introduced;
以化合物陶瓷靶材作为第一溅射靶材，在所述衬底材料表面生长 (AlxGa1-x)2O3形成光吸收层。A compound ceramic target is used as the first sputtering target, and (Al x Ga 1-x ) 2 O 3 is grown on the surface of the substrate material to form a light absorption layer.
在本发明的一个实施例中，所述化合物陶瓷靶材为Ga2O3和Al2O3。In an embodiment of the present invention, the compound ceramic target is Ga 2 O 3 and Al 2 O 3 .
在本发明的一个实施例中，Ga2O3的溅射功率为100W；Al2O3的溅射功率为50～90W。In an embodiment of the present invention, the sputtering power of Ga 2 O 3 is 100W; the sputtering power of Al 2 O 3 is 50-90W.
在本发明的一个实施例中，(AlxGa1-x)2O3中x的取值范围为0.52～0.7。In an embodiment of the present invention, the value of x in (Al x Ga 1-x ) 2 O 3 ranges from 0.52 to 0.7.
在本发明的一个实施例中，采用掩模版，利用Au在所述光吸收层表面溅射形成对称叉指电极，包括：In an embodiment of the present invention, a reticle is used to form symmetrical interdigital electrodes by sputtering Au on the surface of the light absorbing layer, including:
对磁控溅射设备的溅射腔体进行抽真空后通入氩气；The sputtering chamber of the magnetron sputtering equipment is evacuated and argon gas is introduced;
以Au作为第二溅射靶材，在所述光吸收层表面溅射形成对称叉指电极。Using Au as the second sputtering target, a symmetrical interdigital electrode was formed by sputtering on the surface of the light absorbing layer.
在本发明的一个实施例中，所述掩膜版为对称叉指掩膜版。In one embodiment of the present invention, the reticle is a symmetrical interdigital reticle.
本发明的另一个实施例提供了一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器，所述紫外光电探测器由上述实施例中任一所述的方法制备形成；所述紫外光电探测器包括：由下至上竖直分布的衬底层、光吸收层、不对称叉指电极。Another embodiment of the present invention provides a dual-band ultraviolet photodetector based on (AlxGa1 -x ) 2O3 material , wherein the ultraviolet photodetector is prepared by the method described in any one of the above embodiments forming; the ultraviolet photodetector comprises: a substrate layer, a light absorption layer, and asymmetric interdigital electrodes vertically distributed from bottom to top.
与现有技术相比，本发明的有益效果：Compared with the prior art, the beneficial effects of the present invention:
本发明利用磁控共溅可以控制(AlxGa1-x)2O3中Al的含量，紫外光电探测器在高Al组份的情况下，(AlxGa1-x)2O3会发生相的分离，从而会产生两个光学带隙，即对两个紫外光谱范围产生感应，有利于同一个探测器在两个光波波段的检测，提高紫外光电探测器的利用。In the present invention, the content of Al in (Al x Ga 1-x ) 2 O 3 can be controlled by using magnetron co-sputtering. When the ultraviolet photodetector has a high Al composition, (Al x Ga 1-x ) 2 O 3 will Phase separation occurs, resulting in two optical band gaps, that is, induction of two ultraviolet spectral ranges, which is conducive to the detection of the same detector in two light wave bands and improves the utilization of ultraviolet photodetectors.
附图说明Description of drawings
图1为本发明实施例提供的一种(AlxGa1-x)2O3材料的双波段紫外光电探测器的制备方法的流程示意图；1 is a schematic flowchart of a method for preparing a dual-band ultraviolet photodetector made of (Al x Ga 1-x ) 2 O 3 material according to an embodiment of the present invention;
图2为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的截面结构示意图；2 is a schematic cross-sectional structural diagram of a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material provided by an embodiment of the present invention;
图3为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的俯视结构示意图；3 is a schematic top-view structural diagram of a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material provided by an embodiment of the present invention;
图4为本发明实施例提供的一种制备(AlxGa1-x)2O3的设备结构图；4 is a structural diagram of a device for preparing (Al x Ga 1-x ) 2 O 3 according to an embodiment of the present invention;
图5为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的叉指掩模版结构示意图。FIG. 5 is a schematic structural diagram of an interdigitated reticle of a dual-band ultraviolet photodetector based on (AlxGa1 -x ) 2O3 material provided by an embodiment of the present invention.
具体实施方式Detailed ways
下面结合具体实施例对本发明做进一步详细的描述，但本发明的实施方式不限于此。The present invention will be described in further detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.
实施例一：Example 1:
请参见图1，图1为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的制备方法的流程示意图，该方法包括如下步骤：Please refer to FIG. 1. FIG. 1 is a schematic flowchart of a method for preparing a dual-band ultraviolet photodetector based on a (Al x Ga 1-x ) 2 O 3 material provided by an embodiment of the present invention. The method includes the following steps:
步骤a：选取蓝宝石作为衬底材料；Step a: select sapphire as the substrate material;
步骤b：在所述衬底材料表面生长(AlxGa1-x)2O3形成光吸收层；Step b: growing (Al x Ga 1-x ) 2 O 3 on the surface of the substrate material to form a light absorption layer;
步骤c：采用掩模版，利用Au在所述光吸收层表面溅射形成对称叉指电极，以完成所述双波段紫外光电探测器的制备。Step c: Using a mask, using Au to sputter the surface of the light absorbing layer to form symmetrical interdigital electrodes, so as to complete the preparation of the dual-band ultraviolet photodetector.
本发明实施例利用叉指电极形成了MSM(金属-半导体-金属)结构的紫外光电探测器；MSM结构的紫外光电探测器不需要进行p型掺杂，具有响应度高、速度快、随偏压变化小、制备工艺简单、造价低、易于单片集成等优点。In the embodiment of the present invention, an MSM (metal-semiconductor-metal) structure ultraviolet photodetector is formed by using interdigital electrodes; the MSM structure ultraviolet photodetector does not need p-type doping, and has high responsivity, high speed, and polarization It has the advantages of small pressure change, simple preparation process, low cost, and easy monolithic integration.
在一个具体实施例中，选取c面蓝宝石作为衬底材料。In a specific embodiment, c-plane sapphire is selected as the substrate material.
在一个具体实施例中，步骤b可以包括以下步骤：In a specific embodiment, step b may include the following steps:
步骤b1：对磁控溅射设备的溅射腔体进行抽真空后通入氩气和氧气；Step b1: evacuating the sputtering chamber of the magnetron sputtering equipment and feeding argon and oxygen;
步骤b2：以化合物陶瓷靶材作为第一溅射靶材，在所述衬底材料表面生长(AlxGa1-x)2O3形成光吸收层。Step b2: using a compound ceramic target as the first sputtering target, growing (Al x Ga 1-x ) 2 O 3 on the surface of the substrate material to form a light absorption layer.
其中，所述化合物陶瓷靶材可以为Ga2O3和Al2O3。Wherein, the compound ceramic target can be Ga 2 O 3 and Al 2 O 3 .
在一个具体实施例中，Ga2O3的溅射功率为100W；Al2O3的溅射功率为50～90W。In a specific embodiment, the sputtering power of Ga 2 O 3 is 100W; the sputtering power of Al 2 O 3 is 50-90W.
在一个具体实施例中，(AlxGa1-x)2O3中x的取值范围为0.52～0.7。In a specific embodiment, the value of x in (Al x Ga 1-x ) 2 O 3 ranges from 0.52 to 0.7.
在一个具体实施例中，步骤c可以包括以下步骤：In a specific embodiment, step c may include the following steps:
步骤c1：对磁控溅射设备的溅射腔体进行抽真空后通入氩气；Step c1: evacuate the sputtering chamber of the magnetron sputtering equipment and then pass argon gas;
步骤c2：以Au作为第二溅射靶材，在所述光吸收层表面溅射形成对称叉指电极。Step c2: Using Au as the second sputtering target, sputtering the surface of the light absorbing layer to form symmetrical interdigital electrodes.
其中，溅射金属Au也可以替换为Al、Ni、Pt或Ti。The sputtered metal Au can also be replaced by Al, Ni, Pt or Ti.
在一个具体实施例中，所述掩膜版为对称叉指掩膜版。In a specific embodiment, the reticle is a symmetrical interdigital reticle.
请参见图2和图3，图2为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的截面结构示意图；图3为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的俯视结构示意图。该紫外光电探测器包括：衬底层1、光吸收层2、对称叉指电极3。衬底层1、光吸收层2、对称叉指电极3按顺序由下至上竖直分布，形成多层结构，构成紫外光电探测器。Please refer to FIG. 2 and FIG. 3 , FIG. 2 is a schematic cross-sectional structure diagram of a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material provided by an embodiment of the present invention; FIG. 3 is an implementation of the present invention The example provides a schematic top-view structure diagram of a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material. The ultraviolet photodetector includes: a
本发明实施例，可以通过控制Al2O3的溅射功率从而控制(AlxGa1-x)2O3中Al的含量，高Al组份的(AlxGa1-x)2O3会发生相的分离，从而会产生两个光学带隙，即对两个紫外光谱范围产生感应，有利于同一个紫外光电探测器在两个光波波段的检测，提高了紫外光电探测器的利用。In the embodiment of the present invention, the Al content in (Al x Ga 1-x ) 2 O 3 can be controlled by controlling the sputtering power of Al 2 O 3 , and the (Al x Ga 1-x ) 2 O 3 of high Al composition can be controlled Phase separation will occur, resulting in two optical band gaps, that is, induction of two ultraviolet spectral ranges, which is conducive to the detection of the same ultraviolet photodetector in two light wave bands, and improves the utilization of ultraviolet photodetectors.
实施例二：Embodiment 2:
本实施例在上述实施例的基础上，对本发明的紫外光电探测器的制备方法进行详细描述。In this embodiment, on the basis of the above-mentioned embodiments, the preparation method of the ultraviolet photodetector of the present invention is described in detail.
步骤1：选取双面抛光的蓝宝石衬底，厚度为500μm。Step 1: Select a double-sided polished sapphire substrate with a thickness of 500 μm.
衬底选用蓝宝石的理由：首先，蓝宝石衬底的生产技术成熟、器件质量较好；其次，蓝宝石的稳定性很好，能够运用在高温生长过程中；最后，蓝宝石的机械强度高，易于处理和清洗。Reasons for choosing sapphire substrates: First, the production technology of sapphire substrates is mature and the device quality is good; secondly, sapphire has good stability and can be used in high-temperature growth processes; finally, sapphire has high mechanical strength, easy to handle and cleaning.
进一步地，选用c面蓝宝石作为衬底材料。c面是指蓝宝石的[0001]晶向，蓝宝石沿[0001]晶向生长的工艺成熟、成本相对较低，物化性能稳定。Further, c-plane sapphire is selected as the substrate material. The c-plane refers to the [0001] crystal orientation of sapphire. The growth of sapphire along the [0001] crystal orientation is mature, the cost is relatively low, and the physical and chemical properties are stable.
步骤2：在蓝宝石衬底上通过磁控共溅射法溅射Ga2O3和Al2O3，从而生长(AlxGa1-x)2O3得到光吸收层。Step 2: Sputtering Ga 2 O 3 and Al 2 O 3 on the sapphire substrate by magnetron co-sputtering, thereby growing (Al x Ga 1-x ) 2 O 3 to obtain a light absorbing layer.
具体地,对磁控溅射设备的溅射腔体进行抽真空后通入氩气和氧气；Specifically, the sputtering chamber of the magnetron sputtering equipment is evacuated and then introduced into argon and oxygen;
以Ga2O3和Al2O3作为第一溅射靶材，在所述衬底材料表面生长 (AlxGa1-x)2O3形成光吸收层。Using Ga 2 O 3 and Al 2 O 3 as the first sputtering target, grow (Al x Ga 1-x ) 2 O 3 on the surface of the substrate material to form a light absorption layer.
请参见图4，图4为本发明实施例提供的一种制备(AlxGa1-x)2O3的设备结构图。该设备包括：为第一溅射靶材提供电源的射频电源4、靶材托5、第一溅射靶材挡板6、进气口7、连接真空系统的抽气管道8、基片挡板9、样品衬底放置的托盘10、基地加热盘11、旋转机12。旋转机12用来保障沉积薄膜的均匀性。Please refer to FIG. 4 , which is a structural diagram of an apparatus for preparing (Al x Ga 1-x ) 2 O 3 according to an embodiment of the present invention. The equipment includes: a radio
其中，第一溅射靶材选用质量百分比大于等于99.99％的Ga2O3和Al2O3，溅射功率分别为100W和90W，以质量百分比大于等于99.999％的氧气和氩气作为溅射气体通入溅射腔，溅射前，对磁控溅射设备的溅射腔体进行抽真空，然后通过进气口7通入氩气进行清洗，将蓝宝石衬底置于托盘10 上，基地加热盘11开始加热，然后通过进气口7通入氧气开始沉积，将第一溅射靶材置于靶材托5处，接通射频电源4，在真空度为4×10-4～6×10-4Pa、氩气流量为20cm3/s、氧气流量为5cm3/s、靶材基距为5cm的条件下，通过改变Al2O3靶材的溅射功率来得到具有高组份Al的(AlxGa1-x)2O3层材料，同时利用旋转机12来保障沉积薄膜的均匀性，从而形成光吸收层。Among them, the first sputtering target is Ga 2 O 3 and Al 2 O 3 with a mass percentage greater than or equal to 99.99%, the sputtering power is 100W and 90W respectively, and oxygen and argon with a mass percentage greater than or equal to 99.999% are used as sputtering The gas is introduced into the sputtering chamber. Before sputtering, the sputtering chamber of the magnetron sputtering equipment is evacuated, and then argon gas is introduced through the
溅射过程中，衬底层温度为610℃，沉积溅射时间为1h，随后在750℃条件下进行原位退火2h。During the sputtering process, the substrate layer temperature was 610 °C, the deposition sputtering time was 1 h, and then in-situ annealing was performed at 750 °C for 2 h.
在一个具体实施例中，通过改变Al2O3靶材的溅射功率，可以使 (AlxGa1-x)2O3中x的取值范围为0.52～0.7。Al含量在这个范围内属于高Al 含量，在高Al组分的情况下，(AlxGa1-x)2O3会发生相分离，从而会对两个光波波段产生感应。In a specific embodiment, by changing the sputtering power of the Al 2 O 3 target, the value of x in (Al x Ga 1-x ) 2 O 3 can be in the range of 0.52-0.7. The Al content in this range is a high Al content. In the case of a high Al composition, (Al x Ga 1-x ) 2 O 3 will undergo phase separation, which will induce induction in two light wave bands.
步骤3：请参见图5，图5为本发明实施例提供的一种基于(AlxGa1-x)2O3材料的双波段紫外光电探测器的叉指掩模版结构示意图。采用叉指掩模版，利用Au在所述光吸收层表面溅射形成对称叉指电极，以完成所述双波段紫外光电探测器的制备。Step 3: Please refer to FIG. 5, which is a schematic structural diagram of an interdigital reticle of a dual-band ultraviolet photodetector based on (Al x Ga 1-x ) 2 O 3 material according to an embodiment of the present invention. Using an interdigital mask, using Au to sputter the surface of the light absorbing layer to form symmetrical interdigital electrodes, so as to complete the preparation of the dual-band ultraviolet photodetector.
利用磁控溅射工艺在所述具有高组分Al的(AlxGa1-x)2O3材料层上表面磁控溅射叉指电极材料，其中，第二溅射靶材分别选用质量百分比大于等于99.99％的Au靶材，以质量百分比大于等于99.999％的氩气作为溅射气体通入溅射腔，溅射前，对磁控溅射设备腔体进行抽真空，然后用氩气进行清洗。在真空度为4×10-4～6×10-4Pa、氩气流量为20cm3/s、靶材基距为5cm 和工作电流为1A的条件下溅射形成不对称的叉指电极。The interdigital electrode material is magnetron sputtered on the upper surface of the (Al x Ga 1-x ) 2 O 3 material layer with high composition Al by using the magnetron sputtering process, wherein the second sputtering target is selected from the quality of Au target with a percentage greater than or equal to 99.99%, and argon gas with a mass percentage greater than or equal to 99.999% as the sputtering gas is passed into the sputtering chamber. Before sputtering, the magnetron sputtering equipment chamber is evacuated, and then argon gas is used. wash. The asymmetric interdigital electrodes were formed by sputtering under the conditions of vacuum degree of 4×10 -4 to 6×10 -4 Pa, argon flow rate of 20cm 3 /s, target base distance of 5cm and working current of 1A.
其中，Au厚度为120nm；Au也可以由Al、Ni、Pt或Ti代替。Among them, the thickness of Au is 120 nm; Au can also be replaced by Al, Ni, Pt or Ti.
叉指掩膜板的大小为：指长L为2800μm、指宽d为200μm、指间距W 为200μm。The size of the interdigital mask is as follows: the finger length L is 2800 μm, the finger width d is 200 μm, and the finger spacing W is 200 μm.
与现有技术相比，本发明具有以下优点：Compared with the prior art, the present invention has the following advantages:
本发明实施例通过磁控共溅法改变Al2O3靶材的功率大小，来得到高Al 组分的(AlxGa1-x)2O3层材料，使其相发生分离，从而制备双波段紫外探测器件；从而有利于同一个紫外光电探测器在多个波段的检测，同时检测多个信号波段，提高紫外光电探测器的利用。In the embodiment of the present invention, the power of the Al 2 O 3 target is changed by the magnetron co-sputtering method to obtain the (Al x Ga 1-x ) 2 O 3 layer material with high Al composition, and the phases are separated to prepare The dual-band ultraviolet detection device is beneficial to the detection of the same ultraviolet photodetector in multiple wavelength bands, and simultaneously detects multiple signal bands, thereby improving the utilization of the ultraviolet photodetector.
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deductions or substitutions can be made, which should be regarded as belonging to the protection scope of the present invention.
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