CN106637404B - A method of utilizing tube furnace growing large-area monocrystalline vanadium dioxide film - Google Patents
A method of utilizing tube furnace growing large-area monocrystalline vanadium dioxide film Download PDFInfo
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- CN106637404B CN106637404B CN201611107754.2A CN201611107754A CN106637404B CN 106637404 B CN106637404 B CN 106637404B CN 201611107754 A CN201611107754 A CN 201611107754A CN 106637404 B CN106637404 B CN 106637404B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract
The invention discloses a kind of methods using tube furnace growing large-area monocrystalline vanadium dioxide film, in certain thickness SiO2/Si、Si3N4/ Si, silicon, quartz and sapphire etc. are tested on substrate, are grown using gas-solid mode.It tests substrate aufwuchsplate and passes through stringent polishing treatment, reaction source vanadium pentoxide powder is uniformly placed on quartz boat bottom, then experiment substrate is put into quartz boat, substrate grows placed face down.Large area monocrystalline vanadium dioxide film is prepared by control heating rate, temperature, air pressure and gas flow size and reaction time in tube furnace vacuum environment.Than general vanadium dioxide film, it has excellent performance much the large area monocrystalline vanadium dioxide film prepared in this way, and simple process, quality of forming film are high；After the monocrystalline vanadium dioxide film insulator-metal phase transition prepared, conductivity variations amplitude reaches 4~5 orders of magnitude, is a kind of film of monocrystal material, photoelectricity, it is infrared, in terms of be with a wide range of applications.
Description
Technical field
The present invention relates to a kind of oxide semiconductor material growing methods, more particularly to a kind of utilization tube furnace to grow big face
The method of product monocrystalline vanadium dioxide film.
Background technique
Vanadium dioxide is a kind of transition metal oxide with unique properties, will appear insulator to gold in 340K or so
Belong to the thermal induced phase transition of state.This phase transformation of vanadium dioxide can not only be realized by heating, and pass through other such as illumination, power-up
The modes such as field are likely to cause.Vanadium dioxide film with thermal induced phase transition property lasing safety, it is ultrafast switch and it is infrared
It is had potential application in terms of thermal imaging, thus vanadium dioxide film is known as " smart membranes " by image.
General vanadium dioxide film material preparation method mainly has vacuum vapour deposition, sputtering method, chemical vapour deposition technique, object
Physical vapor deposition and pulse laser deposition etc..Japan musashi open country is electrically communicated use for laboratory pulsed laser deposition in TiO2Substrate
On vanadium dioxide film is prepared；It is depressed using magnetron sputtering method in different oxygen and difference is made in U.S. Robert Webster research center
The vanadium dioxide of stoichiometric ratio±xSeries thin film.These preparation methods technique is more mature, can growing film area it is big, and film
Thickness is controllable, but these films are the film of polycrystalline structure, and change in resistance generally can only achieve 2~3 numbers when phase transformation
Magnitude, the performance in terms of electricity-optics are thus also affected.
Summary of the invention
For conventional method preparation vanadium dioxide film material in the deficiency of aspect of performance, the invention proposes a kind of benefits
With the method for tube furnace growing large-area monocrystalline vanadium dioxide film, to solve the disadvantage in above-mentioned background technique.
In order to solve the above technical problems, of the invention a kind of using tube furnace growing large-area monocrystalline vanadium dioxide film
Method grows vanadium dioxide film using tube furnace, which includes tubular type furnace control system and quartz ampoule, quartz ampoule one end
For air inlet, vacuum meter is set on the pipeline of air inlet, experiment substrate and quartz boat are put into quartz ampoule, tests substrate and quartz
Vanadium pentoxide powder is put into boat, the quartz ampoule other end is gas outlet.
It tests substrate and selects SiO2/Si、Si3N4/ Si, silicon, quartz or sapphire.Heating when experiment is by control growth
Rate keeps temperature, rate of temperature fall and gas flow to realize.
In the present invention, experiment substrate aufwuchsplate need to pass through polishing treatment；Vanadium pentoxide powder used in experiment is pure
Degree is 99.99%, and nodeless mesh particle；Used carrier gas is argon gas, purity 99.9999% in experiment.
A method of utilizing tube furnace growing large-area monocrystalline vanadium dioxide film, the specific steps are as follows:
(1) acetone, dehydrated alcohol is used respectively to be cleaned by ultrasonic respectively experiment substrate and quartz boat, it is ensured that experiment substrate and quartz
Boat surface is clean, without grease and pollutant；Using solvent cleaning experiment substrate and quartz boat, removal of oil and grease and oxide, acetone
It can also be replaced with isopropanol.
(2) it is put into vanadium pentoxide powder in the quartz boat obtained in step (1), and is put into quartz ampoule in order
Interior, experiment needs to use three quartz boats every time, and first quartz boat is placed among the inside warm area of quartz ampoule；Second stone
Ying Zhou is placed among the outside warm area of quartz ampoule；Third quartz boat is placed in the outside of second quartz boat, distance second
The distance of a quartz boat is 5~10mm.Vanadium pentoxide powder is uniformly placed in quartz boat, and experiment substrate is put into first
In a and second quartz boat, experiment substrate grows placed face down, test substrate height and following powder distance 1~
3mm does not wherein place substrate on third quartz boat；Be in third quartz boat do not test substrate only put powder, second
Powder in a quartz boat is considerably less, and the quality for growing into the film of substrate surface, third stone are influenced to prevent powder excessively
The powder of Ying Zhou slightly than first boat is more, because third quartz boat is no individually to place powder boat, in order to
The environment powder for providing one good growing film of substrate on third quartz boat is slightly more.
(3) after placing quartz boat in step (2), envelope chamber is carried out to quartz ampoule, is evacuated to 50~80mTorr, so
After be passed through argon gas, flow is 5~20SCCM, the temperature of outside warm area and inside warm area is raised to 800~1000 DEG C, the used time 40~
It 100 minutes, adjusts the air pressure valve of vacuum orifice in time by the variation of quartzy intraductal atmospheric pressure in observation temperature-rise period, makes its quartz
Intraductal atmospheric pressure controls in the range of 200~900mTorr, controls heating rate in 10~20 DEG C/min, and temperature reaches 800~
1000 DEG C of laggard trip temperatures are kept, and the retention time is 180~360 minutes, are then controlled 1~2 DEG C/min of rate of temperature fall, are worked as temperature
Quartz ampoule is opened in display after being lower than 30 DEG C, take out experiment substrate.
The vanadium pentoxide powder and that vanadium pentoxide powder that first quartz boat is placed with, second quartz boat are placed with
The mass ratio for the vanadium pentoxide powder being placed in three quartz boats is 1.5~3:1~2:1.5~6.
Outside warm area and inside warm area temperature are raised to 900~1000 DEG C and 800~900 DEG C from room temperature respectively.According to each
Different experiment substrates may be used in experiment, and the substrate of high growth temperature will be needed to be put into temperature outside, will need low-temperature epitaxy
Substrate is put into inside warm area.
Usual tube furnace is all used for the growth of vanadium dioxide nanowire, and the present invention is used by adjusting vanadium pentoxide powder
The influence factors such as amount, substrate placement position, heating rate, temperature hold-time, rate of temperature fall, carrier gas flux realize big face
Product monocrystalline vanadium dioxide film growth.This growth and used raw material vanadium pentoxide powder, substrate placement position, growth
Temperature etc. is all closely related.Pressure in experimentation in quartz ampoule and select type of substrate difference to the size of growing film
Have an impact, this is related with Crystal surface structure and growth rate.
Beneficial effects of the present invention:
1, the vanadium dioxide film that the present invention is grown generates apparent sudden change of resistivity after raising temperature reaches transformation temperature
Characteristic can reach the variation of 4~5 orders of magnitude；
2, the rate of film build for the vanadium dioxide film that the present invention is grown is high, since surface void is smaller, charge carrier transport efficiency
It is higher, to be conducive to improve material photoelectric properties；
3, the vanadium dioxide film that grows of the present invention grows to obtain using tube furnace, growth apparatus is simple, preparation process at
Ripe, reproducible, at low cost, the film thickness of generation is suitable for, uniformity is good, controllability is strong, to be conducive to the industry of material
Change and promotes and applies.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of vanadium dioxide film tube furnace of the invention.
Fig. 2 is that position and powder position of the experiment substrate in quartz ampoule show in vanadium dioxide film growth course of the present invention
It is intended to.
Fig. 3 is to utilize tube furnace growing large-area monocrystalline vanadium dioxide film heating process flow chart.
Fig. 4 is the present invention in 1000nm SiO2The vanadium dioxide film scanning electron microscope diagram grown on/Si substrate.
Fig. 5 is the present invention in 200nm Si3N4The vanadium dioxide film scanning electron microscope diagram grown on/Si substrate.
Fig. 6 is the vanadium dioxide film scanning electron microscope diagram that the present invention is grown on a silicon substrate.
Fig. 7 is the resistance variation with temperature curve graph of vanadium dioxide film of the present invention.
Fig. 8 is the resistance variation with temperature X-ray diffractogram of vanadium dioxide film of the present invention.
In figure, 1, air inlet, 2, vacuum meter, 3, quartz ampoule, 4, quartz boat, 5, gas outlet, 6, tubular type furnace control system, 7,
Vanadium pentoxide powder, 8, experiment substrate.
Specific embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and attached drawing, the invention will be further described, should
The examples are only for explaining the invention, does not restrict the protection scope of the present invention.
As shown in Figure 1, a kind of method using tube furnace growing large-area monocrystalline vanadium dioxide film of the invention, uses
Tube furnace grows vanadium dioxide film, which includes tubular type furnace control system 6 and quartz ampoule 3, and 3 one end of quartz ampoule is air inlet
Mouthful 1, vacuum meter 2 is set on the pipeline of air inlet 1, experiment substrate 8 and quartz boat 4 are put into quartz ampoule 3, tests substrate 8 and stone
Vanadium pentoxide powder 7 is put into English boat 4,3 other end of quartz ampoule is gas outlet 5.
It tests substrate 8 and selects SiO2/Si、Si3N4/ Si, silicon, quartz or sapphire.Heating when experiment is by control growth
Rate keeps temperature, rate of temperature fall and gas flow to realize.In the present invention, experiment substrate aufwuchsplate need to be by polishing
Processing；Vanadium pentoxide powder purity used in experiment is 99.99%, and nodeless mesh particle；Used carrier gas in experiment
For argon gas, purity 99.9999%.
Embodiment 1
As shown in Figure 1, being grown in stringent closed quartz ampoule 3 for vanadium dioxide film is completed, at 3 both ends of quartz ampoule point
It is not air inlet 1 and gas outlet 5；The heating of experiment and rate of temperature fall are set by tubular type furnace control system 6；It is high-quality in order to prepare
The monocrystalline vanadium dioxide film of amount, to 1~2 argon gas is filled in quartz ampoule 3, then allows it again before tube furnace is begun to warm up
It is evacuated to vacuum state.
A method of it utilizing tube furnace growing large-area monocrystalline vanadium dioxide film comprising following steps: selecting base
Chip size is 10 × 10mm2SiO2/ Si tests substrate 8, this experiment substrate 8 is to grown one layer on its surface using silicon as substrate
500~1000nm SiO2Film；First to SiO used2/ Si experiment substrate 8 is cleaned, and experiment substrate 8 is put into the cleaning gaily decorated basket
In, experiment substrate 8 be inserted into cleaning gaily decorated basket slot in it is placed side by side, each experiment substrate 8 keep certain spacing, in order to avoid
The stick to each other damaging substrate surface between substrate and substrate when ultrasonic cleaning；The first step is put into beaker for the gaily decorated basket is cleaned
And suitable acetone is poured into, it is put into supersonic wave cleaning machine and cleans 10 minutes, until the ultrasonic cleaning of acetone terminates；Second step is straight
It connects the substrate after being cleaned with acetone and is put into togerther in the beaker equipped with dehydrated alcohol together with the cleaning gaily decorated basket and be put into ultrasonic wave again
It is cleaned 10 minutes in cleaning machine.
Cleaned experiment substrate 8 is dried up with nitrogen gun, it is ensured that experiment the clean without grease spot in 8 surface of substrate and
Particulate matter.Quartz boat 4 is finally cleaned, quartz boat 4 is put into inside quartz beaker, first pours into suitable acetone inside, ultrasound
Cleaning after five minutes takes out quartz boat 4 inside quartz beaker, and directly quartz boat 4 is put into the beaker equipped with dehydrated alcohol
Face ultrasound 5 minutes；
As shown in Fig. 2, the purity of raw material vanadium pentoxide powder 7 used in experiment is 99.99%, due to five oxidations
Two vanadium powders 7 are inner, and there are the vanadium oxide particles of some crystallizations, must handle vanadium pentoxide powder 7 before experiment,
Vanadium pentoxide powder 7 is put into inside mortar, with the vanadium pentoxide powder 7 of alms bowl pestle grinding crystallization.Experiment needs to use every time
To three quartz boats 4, it is placed with the vanadium pentoxide powder 7 of 0.1~0.2g in first quartz boat 4, is placed on the interior of quartz ampoule 3
Among the warm area of side, the vanadium pentoxide powder 7 that second quartz boat 4 is placed with 0.07~0.15g is placed in the outside temperature of quartz ampoule 3
Among area, the vanadium pentoxide powder 7 that 0.1~0.4g is placed in third quartz boat 4 is placed in the upstream of second quartz boat 4
Apart from its 5~10mm.Vanadium pentoxide powder 7 is uniformly placed in quartz boat 4, and experiment substrate 8 is put into first and the
In two quartz boats 4, experiment substrate 8 grows placed face down, the height of experiment substrate 8 and following vanadium pentoxide powder 7
Distance 2mm does not place experiment substrate 8 wherein on third quartz boat 4.
As shown in figure 3, a kind of utilize tube furnace growing large-area monocrystalline vanadium dioxide film heating process process.To quartz
Pipe 3 carries out envelope chamber, is evacuated to 50~80mTorr, then passes to argon gas, flow 10SCCM, by outside warm area and inside temperature
Area's temperature is raised to 1000 DEG C and 900 DEG C from room temperature respectively, and the heating-up time is all 100 minutes.Pass through quartz in observation temperature-rise period
The variation of air pressure adjusts the air pressure valve of gas outlet 5 in time in pipe 3, makes in its quartz ampoule 3 pressure control 200~700mTorr's
In range, reaches the laggard trip temperature of temperature and keep, kept for duration 360 minutes, growth cools down after terminating, the drop of both sides warm area
The warm time is 600 minutes, takes out experiment substrate 8 when temperature could open quartz ampoule 3 lower than 30 DEG C.
As shown in figure 4, to utilize SiO after tube furnace growth experiment28 scanning electron microscope diagram piece of/Si substrate.It can in figure
To observe that the vanadium dioxide film rate of film build prepared is good and surface free from admixture.
Embodiment 2
Select 200nm Si3N4/ Si does experiment substrate 8, and membrane-film preparation process is as described in Example 1；It is evacuated to 50~
80mTorr, then passes to argon gas, and outside warm area and inside warm area temperature are raised to 900 DEG C from room temperature respectively by flow 15SCCM
With 800 DEG C, the heating-up time is all 40 minutes.The experimental temperature slightly difference that different materials uses, general range is 40~80
Between DEG C.The air pressure valve for adjusting gas outlet 5 in time by the variation of air pressure in quartz ampoule 3 in observation temperature-rise period, makes its quartz
Pressure control reaches the laggard trip temperature of temperature and keeps, the retention time is 200 points in the range of 300~500mTorr in pipe 3
Then clock controls temperature fall time 360 minutes, open quartz ampoule 3 after temperature display is lower than 30 DEG C, takes out experiment substrate 8.
As shown in figure 5, to utilize Si after tube furnace growth experiment3N4/ Si substrate scan electron microscope picture.From picture
In it can be seen that Si3N4/ Si tests substrate 8 can also be with the vanadium dioxide film of growing large-area, but its surface void has one
Fixed gap, without SiO2The large area vanadium dioxide film effect that/Si experiment substrate 8 grows out is good, this is because different
The difference reason such as substrate lattice constant, lattice atoms causes.
Embodiment 3
Silicon is selected to do experiment substrate 8, membrane-film preparation process is as described in Example 1；It is evacuated to 50~80mTorr, so
After be passed through argon gas, outside warm area and inside warm area temperature are raised to 950 DEG C and 850 DEG C from room temperature respectively by flow 20SCCM, rise
The warm time is all 70 minutes.The experimental temperature slightly difference that different materials uses, general range is between 40~100 DEG C.It is logical
The variation for crossing air pressure in quartz ampoule 3 in observation temperature-rise period adjusts the air pressure valve of gas outlet 5 in time, makes air pressure in its quartz ampoule 3
Control reaches the laggard trip temperature of temperature and keeps in the range of 200~400mTorr, and the retention time is 100 minutes, is then controlled
Temperature fall time 500 minutes, quartz ampoule 3 is opened after temperature display is lower than 30 DEG C, takes out experiment substrate 8.
As shown in fig. 6, to utilize silicon chip scanning electron microscope diagram piece after tube furnace growth experiment.It can be with from picture
Find out that silicon experiment substrate 8 can also be with the vanadium dioxide film of growing large-area, but its surface void has certain gap, does not have
There is SiO2The large area vanadium dioxide film effect that/Si experiment substrate 8 grows out is good, this is because substrates of different lattice is normal
The difference reason such as number, lattice atoms causes；Fig. 7, which is that the present invention is a kind of, utilizes tube furnace growing large-area monocrystalline vanadium dioxide film
Resistance varies with temperature result.After 68 DEG C of generation insulator-metal phase transitions, resistivity can occur sharply to become vanadium dioxide film
Change, amplitude of variation reaches 4 most magnitudes, considerably beyond the change in resistance of general polycrystal film material.
As shown in figure 8, be the X-ray diffractogram of vanadium dioxide, can obtain the ingredient of material, material internal atom or point
The structure of son.The film is vanadium dioxide monocrystal thin films, natural width of the halfwidth close to instrument, crystal knot as can be seen from Fig.
Brilliant degree is high, and monocrystalline is high-quality.A kind of method using tube furnace growing large-area monocrystalline vanadium dioxide film of the invention overcomes
The above method prepares the deficiency of thin-film material quality, and the variation of phase change resistor rate can reach 4~5 orders of magnitude, electricity, optical
It can there has also been very big promotions.This large area monocrystalline vanadium dioxide film grown using tube furnace, for expanding vanadium dioxide
Phase-change material application field has positive effect.
Claims (4)
1. a kind of method using tube furnace growing large-area monocrystalline vanadium dioxide film, it is characterised in that: specific step is as follows:
(1) acetone, dehydrated alcohol is used to be cleaned by ultrasonic respectively experiment substrate and quartz boat, it is ensured that experiment substrate and quartz boat surface
Completely, without grease and pollutant；
(2) it is put into vanadium pentoxide powder in the quartz boat obtained in step (1), and be put into quartz ampoule in order, often
Secondary experiment needs to use three quartz boats, and first quartz boat is placed among the inside warm area of quartz ampoule；Second quartz boat
It is placed among the outside warm area of quartz ampoule；Third quartz boat is placed in the outside of second quartz boat, second stone of distance
The distance of Ying Zhou is 5~10mm；The vanadium pentoxide powder that purity is 99.99% is put into mortar, after being ground with alms bowl pestle
Even is placed in quartz boat, and experiment substrate growth is placed in first and second quartz boat down, tests substrate
Height and following powder 1~3mm of distance do not place substrate, five oxidations that first quartz boat is placed on third quartz boat
The vanadium pentoxide powder being placed in vanadium pentoxide powder and third quartz boat that two vanadium powders, second quartz boat are placed with
Mass ratio be 1.5~3:1~2:1.5~6；
(3) after placing quartz boat in step (2), envelope chamber is carried out to quartz ampoule, 50~80mTorr is evacuated to, then leads to
Enter argon gas, flow is 5~20SCCM, the temperature of outside warm area and inside warm area is raised to 800~1000 DEG C, the used time 40~100
Minute, the air pressure valve for adjusting vacuum orifice makes pressure control in its quartz ampoule control heating in the range of 200~900mTorr
Rate is in 10~20 DEG C/min, and temperature reaches 800~1000 DEG C of laggard trip temperatures and keeps, and the retention time is 180~360 minutes,
Then 1~2 DEG C/min of rate of temperature fall is controlled, opens quartz ampoule after temperature display is lower than 30 DEG C, takes out experiment substrate.
2. a kind of method using tube furnace growing large-area monocrystalline vanadium dioxide film according to claim 1, special
Sign is: the tube furnace includes tubular type furnace control system and quartz ampoule, and described quartz ampoule one end is air inlet, the air inlet
Vacuum meter is set on pipeline, experiment substrate and quartz boat are put into the quartz ampoule, is put into vanadic anhydride in the quartz boat
Powder, the quartz ampoule other end are gas outlet.
3. a kind of method using tube furnace growing large-area monocrystalline vanadium dioxide film according to claim 1, special
Sign is: experiment substrate selects SiO2/Si、Si3N4/ Si, silicon, quartz or sapphire.
4. a kind of method using tube furnace growing large-area monocrystalline vanadium dioxide film according to claim 1, special
Sign is: outside warm area and inside warm area temperature are raised to 900~1000 DEG C and 800~900 DEG C from room temperature respectively.
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| CN109487231B (en) * | 2018-12-30 | 2023-08-22 | 金堆城钼业股份有限公司 | Device and method for preparing triangular molybdenum disulfide film |
| CN111204805A (en) * | 2019-09-11 | 2020-05-29 | 杭州电子科技大学 | Vanadium dioxide nanowire and preparation method and application thereof |
| CN110510585B (en) * | 2019-09-30 | 2022-09-06 | 福州大学 | Preparation method of large-area thin-layer two-dimensional telluroene |
| CN111893569B (en) * | 2020-07-13 | 2021-11-05 | 暨南大学 | Vanadium dioxide crystal with good appearance and strong crystallinity, and preparation and application thereof |
| CN111876826B (en) * | 2020-07-13 | 2021-09-17 | 暨南大学 | High-quality grass-shaped vanadium pentoxide crystal, preparation method thereof and low-dimensional material based on high-quality grass-shaped vanadium pentoxide crystal |
| CN111948151A (en) * | 2020-08-19 | 2020-11-17 | 东华理工大学 | Method for judging number of graphene oxide layers based on thermally enhanced optical contrast |
| CN112938893B (en) * | 2021-02-09 | 2023-10-17 | 南方科技大学 | Vanadium dioxide monocrystal driver and preparation method and application thereof |
| CN112981530B (en) * | 2021-02-09 | 2022-04-05 | 南方科技大学 | Vanadium dioxide single crystal micro-nanowire and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105198231A (en) * | 2014-05-30 | 2015-12-30 | 武汉理工大学 | Inorganic sol-gel preparation method of vanadium dioxide film |
| CN106012014A (en) * | 2016-06-06 | 2016-10-12 | 电子科技大学 | Vanadium dioxide film growing method |
| CN106119809A (en) * | 2016-05-04 | 2016-11-16 | 上海大学 | High flux combination preparation VO2the Apparatus and method for of thin film |
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2016
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105198231A (en) * | 2014-05-30 | 2015-12-30 | 武汉理工大学 | Inorganic sol-gel preparation method of vanadium dioxide film |
| CN106119809A (en) * | 2016-05-04 | 2016-11-16 | 上海大学 | High flux combination preparation VO2the Apparatus and method for of thin film |
| CN106012014A (en) * | 2016-06-06 | 2016-10-12 | 电子科技大学 | Vanadium dioxide film growing method |
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