CN109285910B - Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof - Google Patents
Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000031700 light absorption Effects 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 14
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 13
- 239000010980 sapphire Substances 0.000 claims abstract description 13
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000005477 sputtering target Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000003054 catalyst Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract description 2
- 238000002211 ultraviolet spectrum Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 238000005191 phase separation Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 101100402127 Escherichia coli (strain K12) moaA gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a catalyst based on (Al)xGa1‑x)2O3The ultraviolet photoelectric detector of the MSM structure of material and its preparation method, the said preparation method includes: c-plane sapphire is selected as a substrate material; using Ga2O3And Al2O3Growing (Al) on the surface of the substrate materialxGa1‑x)2O3Forming a light absorption layer; and forming an asymmetric interdigital electrode on the surface of the light absorption layer by using a mask plate so as to finish the preparation of the ultraviolet photoelectric detector of the MSM structure. By the preparation method, the ultraviolet photoelectric detector with high Al component can be obtained, so that two optical band gaps can be generated, namely, induction is generated in two ultraviolet spectrum ranges, detection of the same detector in two light wave bands is facilitated, and utilization of the ultraviolet photoelectric detector is improved.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a catalyst based on (Al)xGa1-x)2O3An ultraviolet photoelectric detector of a material MSM structure and a preparation method thereof.
Background
In recent years, with the development of scientific technology and the maturity of photoelectric technology, the ultraviolet photoelectric detector is widely applied in the civil and military fields. Currently, the commonly used ultraviolet photodetectors are of MOS (metal-oxide-semiconductor) structure, and all of the ultraviolet photodetectors of this structure can only detect signals within a relatively single spectral response range.
However, for optical wavelength division multiplexing, multispectral instrumentation, laser warning, etc., it is desirable to be able to detect optical signals in two or more spectral response ranges simultaneously; therefore, the development of ultraviolet photodetectors with two or more spectral response ranges has great significance for detecting multi-band signals in the future.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a catalyst based on (Al)xGa1-x)2O3An ultraviolet photoelectric detector of a material MSM structure and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
one embodiment of the present invention provides a composition based on (Al)xGa1-x)2O3The preparation method of the ultraviolet photoelectric detector of the material MSM structure comprises the following steps:
c-plane sapphire is selected as a substrate material;
using Ga2O3And Al2O3Growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorption layer;
and forming an asymmetric interdigital electrode on the surface of the light absorption layer by using a mask plate so as to finish the preparation of the ultraviolet photoelectric detector of the MSM structure.
In one embodiment of the present invention, Ga is utilized2O3And Al2O3Growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorbing layer comprising:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and then introducing argon and oxygen;
with Ga2O3And Al2O3As a first sputtering target, growing (Al) on the surface of the substrate materialxGa1-x)2O3A light absorbing layer is formed.
In one embodiment of the present invention, Ga2O3The sputtering power of (2) is 100W; al (Al)2O3The sputtering power is 50-90W.
In one embodiment of the present invention, (Al)xGa1-x)2O3The value range of the x is 0.52-0.7.
In one embodiment of the present invention, forming an asymmetric interdigital electrode on a surface of the light absorption layer using a mask includes:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and introducing argon;
and forming an asymmetric interdigital electrode on the surface of the light absorption layer by taking a metal material as a second sputtering target.
In one embodiment of the present invention, the metal material is Au, Al, Ni, Pt, or Ti.
In one embodiment of the present invention, the mask is an asymmetric interdigital mask.
Another embodiment of the present invention provides a catalyst based on (Al)xGa1-x)2O3An ultraviolet photodetector of a material MSM structure, wherein the ultraviolet photodetector is prepared by the method in any one of the embodiments; the ultraviolet photodetector includes: the array substrate comprises a substrate layer, a light absorption layer and asymmetric interdigital electrodes which are vertically distributed from bottom to top.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention can control (Al) by using a magnetic control co-sputtering methodxGa1-x)2O3The content of Al in the product is low, and the ultraviolet photoelectric detector has high Al contentxGa1-x)2O3The phase separation can occur, so that two optical band gaps can be generated, namely, the induction is generated in two ultraviolet spectrum ranges, the detection of the same detector in two light wave bands is facilitated, and the utilization rate of the ultraviolet photoelectric detector is improved;
2. the ultraviolet photoelectric detector of the invention adopts the asymmetric interdigital mask plate, so that the formed electrode has asymmetry, the barrier heights of two sides are different, the self-powered characteristic is formed, and the sensitivity of the ultraviolet photoelectric detector is improved to a great extent.
Drawings
FIG. 1 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The flow schematic diagram of the preparation method of the ultraviolet photoelectric detector of the material MSM structure;
FIG. 2 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The cross-sectional structure schematic diagram of the ultraviolet photoelectric detector of the material MSM structure;
FIG. 3 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The top view structure schematic diagram of the ultraviolet photoelectric detector of the material MSM structure;
FIG. 4 shows a preparation process (Al) according to an embodiment of the present inventionxGa1-x)2O3The apparatus structural diagram of (1);
FIG. 5 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3The material MSM structure is an interdigital mask plate structure schematic diagram of the ultraviolet photoelectric detector.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
The first embodiment is as follows:
the MSM structure refers to a metal-semiconductor-metal structure, and the ultraviolet photoelectric detector of the MSM structure refers to a metal-semiconductor-metal type ultraviolet photoelectric detector. The structure is formed by planar line-type interdigital electrodes and semiconductor materials to form a 'back-to-back' double Schottky barrier. The MSM type ultraviolet photoelectric detector does not need to carry out p-type doping, and has the advantages of high responsivity, high speed, small change along with bias voltage, simple preparation process, low manufacturing cost, easiness in monolithic integration and the like.
Referring to fig. 1, fig. 1 shows an embodiment of the present invention, wherein the embodiment of the present invention provides a liquid crystal display device based on (Al)xGa1-x)2O3The flow schematic diagram of the preparation method of the ultraviolet photoelectric detector of the material MSM structure comprises the following steps:
step a: c-plane sapphire is selected as a substrate material;
step b: using Ga2O3And Al2O3Growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorption layer;
step c: and forming an asymmetric interdigital electrode on the surface of the light absorption layer by using a mask plate so as to finish the preparation of the ultraviolet photoelectric detector of the MSM structure.
In one embodiment, step b may comprise:
step b 1: vacuumizing a sputtering cavity of the magnetron sputtering equipment and then introducing argon and oxygen;
step b 2: with Ga2O3And Al2O3As a first sputtering target, growing (Al) on the surface of the substrate materialxGa1-x)2O3A light absorbing layer is formed.
In one embodiment, Ga2O3The sputtering power of (2) is 100W; al (Al)2O3The sputtering power is 50-90W.
In a specific embodiment, (Al)xGa1-x)2O3The value range of the x is 0.52-0.7.
In a specific embodiment, step c may comprise the steps of:
step c 1: vacuumizing a sputtering cavity of the magnetron sputtering equipment and introducing argon;
step c 2: and forming an asymmetric interdigital electrode on the surface of the light absorption layer by taking a metal material as a second sputtering target.
Wherein the metal material is Au, Al, Ni, Pt or Ti.
In one embodiment, the reticle is an asymmetric interdigitated reticle.
Referring to fig. 2 and 3, fig. 2 shows an embodiment of the present invention, wherein (Al) -basedxGa1-x)2O3The cross-sectional structure schematic diagram of the ultraviolet photoelectric detector of the material MSM structure; FIG. 3 shows an embodiment of the present invention, which is based on (Al)xGa1-x)2O3Overlook structure schematic of ultraviolet photoelectric detector of material MSM structureFigure (a). The ultraviolet photodetector includes: substrate layer 1, light absorption layer 2, asymmetric interdigital electrode 3. The substrate layer 1, the light absorption layer 2 and the asymmetric interdigital electrode 3 are vertically distributed from bottom to top in sequence to form a multilayer structure, and the ultraviolet photoelectric detector is formed.
According to the embodiment of the invention, Al can be controlled2O3Thereby controlling the sputtering power of (Al)xGa1-x)2O3Medium Al content, high Al content (Al)xGa1-x)2O3Phase separation occurs and two optical bandgaps, i.e. sensing for two ultraviolet spectral ranges, are created. In addition, due to the asymmetry of the electrodes, the heights of the potential barriers at two sides are different, so that the self-powered characteristic is formed, and the sensitivity of the ultraviolet photoelectric detector is greatly improved.
Example two:
in this embodiment, a method for manufacturing the ultraviolet photodetector of the present invention is described in detail based on the above embodiments.
Step 1: a double-side polished c-plane sapphire substrate with a thickness of 500 μm was selected.
The reason why sapphire is used as the substrate: firstly, the production technology of the sapphire substrate is mature, and the quality of devices is good; secondly, the sapphire has good stability and can be applied to the high-temperature growth process; finally, sapphire is mechanically strong and easy to handle and clean.
The c surface refers to the [0001] crystal orientation of the sapphire, the process for growing the sapphire along the [0001] crystal orientation is mature, the cost is relatively low, and the physical and chemical properties are stable.
Step 2: sputtering Ga on sapphire substrate by magnetron co-sputtering method2O3And Al2O3Thereby growing (Al)xGa1-x)2O3The light absorbing layer was obtained.
Specifically, a sputtering cavity of the magnetron sputtering equipment is vacuumized and then argon and oxygen are introduced;
with Ga2O3And Al2O3As a first sputtering target material on the linerSurface growth of base material (Al)xGa1-x)2O3A light absorbing layer is formed.
Referring to FIG. 4, FIG. 4 shows a preparation method (Al) according to an embodiment of the present inventionxGa1-x)2O3The apparatus of (1). The apparatus comprises: the device comprises a radio frequency power supply 4 for supplying power to a first sputtering target, a target holder 5, a first sputtering target baffle 6, an air inlet 7, an air exhaust pipeline 8 connected with a vacuum system, a substrate baffle 9, a tray 10 for placing a sample substrate, a base heating plate 11 and a rotating machine 12. The rotating machine 12 is used to secure uniformity of the deposited thin film.
Wherein the first sputtering target material selects Ga with the mass percent of more than or equal to 99.99 percent2O3And Al2O3The sputtering power is respectively 100W and 90W, oxygen and argon with the mass percent of more than or equal to 99.999 percent are used as sputtering gases to be introduced into a sputtering cavity, before sputtering, the sputtering cavity of magnetron sputtering equipment is vacuumized, then the argon is introduced through an air inlet 7 to be cleaned, a sapphire substrate is placed on a tray 10, a base heating plate 11 starts to be heated, then the oxygen is introduced through the air inlet 7 to start deposition, a first sputtering target material is placed at a target material support 5, a radio frequency power supply 4 is switched on, and the vacuum degree is 4 multiplied by 10-4～6×10-4Pa, argon flow 20cm3The flow rate of oxygen is 5cm3Changing Al under the condition that the base distance of the target is 5cm2O3Sputtering power of the target to obtain (Al) with high composition AlxGa1-x)2O3The layer material is formed while the uniformity of the deposited film is secured by the rotating machine 12, thereby forming the light absorbing layer.
In the sputtering process, the temperature of the substrate layer is 610 ℃, the deposition sputtering time is 1h, and then in-situ annealing is carried out for 2h at 750 ℃.
In one embodiment, by altering Al2O3The sputtering power of the target material can be adjusted to (Al)xGa1-x)2O3The value range of the x is 0.52-0.7. The Al content in this range is a high Al content, in the case of a high Al component, (Al)xGa1-x)2O3Phase separation occurs and thus, the two optical wave bands are induced.
And step 3: referring to fig. 5, fig. 5 shows an embodiment of the present invention, wherein (Al) -basedxGa1-x)2O3The material MSM structure is an interdigital mask plate structure schematic diagram of the ultraviolet photoelectric detector. And forming an asymmetric interdigital electrode on the surface of the light absorption layer by adopting an interdigital mask plate so as to finish the preparation of the ultraviolet photoelectric detector of the MSM structure.
The mask is an asymmetric interdigital mask.
By using magnetron sputtering process on (Al)xGa1-x)2O3And carrying out magnetron sputtering on the upper surface of the material layer to obtain the interdigital electrode material, wherein the second sputtering target material is an Au target material with the mass percent of more than or equal to 99.99%, argon with the mass percent of more than or equal to 99.999% is used as sputtering gas and introduced into a sputtering cavity, the cavity of the magnetron sputtering equipment is vacuumized before sputtering, and then the cleaning is carried out by using the argon. Under vacuum degree of 4X 10-4～6×10-4Pa, argon flow 20cm3And/s, sputtering under the conditions that the target base distance is 5cm and the working current is 1A to form the asymmetric interdigital electrode.
Wherein the thickness of Au is 120 nm. Au may also be replaced by Al, Ni, Pt or Ti.
The size of the interdigital mask plate is as follows: the finger length L is 2800 μm, the first finger width d1 is 400 μm, the second finger width d2 is 200 μm, and the finger pitch W is 200 μm.
In a specific embodiment, the two wide and narrow electrode materials of the interdigital electrode are the same; the width of the electrode is determined according to the width of the interdigital electrode, the electrode with the width is called as a wide electrode, and the electrode with the width is called as a narrow electrode.
Compared with the prior art, the invention has the following advantages:
1. in the embodiment of the invention, Al is changed by a magnetron co-sputtering method2O3The power of the target material is adjusted to obtain (Al) with high Al componentxGa1-x)2O3Layer material, phase separation thereof, to prepare bisA band ultraviolet photoelectric detector;
2. the ultraviolet photoelectric detector prepared by the embodiment of the invention is provided with asymmetric interdigital electrodes, additional potential difference can be formed between the asymmetric interdigital electrodes, and an internal quasi-electric field is generated by the internal potential difference, so that the separation of photo-generated electron-hole pairs is facilitated under the action of an electric field force, energy can be provided for the ultraviolet photoelectric detector, a self-powered detector is formed, and the sensitivity of the ultraviolet photoelectric detector is improved to a great extent.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (6)
1. Based on (Al)xGa1-x)2O3The preparation method of the ultraviolet photoelectric detector of the MSM structure is characterized by comprising the following steps:
c-plane sapphire is selected as a substrate material;
adopts a magnetron sputtering process and Ga2O3And Al2O3Growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorbing layer, wherein the Ga2O3The sputtering power of (1) is 100W, the Al2O3The sputtering power of (Al) is 50-90WxGa1-x)2O3The value range of the medium x is 0.52-0.7;
and forming an asymmetric interdigital electrode on the surface of the light absorption layer by using a mask, wherein the asymmetric interdigital electrode comprises a wide electrode and a narrow electrode, the finger width of the wide electrode is a first finger width, the finger width of the narrow electrode is a second finger width, the finger lengths L of the wide electrode and the narrow electrode are 2800 mu m, the first finger width d1 is 400 mu m, the second finger width d2 is 200 mu m, and the distance W between the wide electrode and the narrow electrode is 200 mu m, so that the preparation of the ultraviolet photoelectric detector with the MSM structure is completed.
2. Method according to claim 1, characterized in that Ga is used2O3And Al2O3Growing (Al) on the surface of the substrate materialxGa1-x)2O3Forming a light absorbing layer comprising:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and then introducing argon and oxygen;
with Ga2O3And Al2O3As a first sputtering target, growing (Al) on the surface of the substrate materialxGa1-x)2O3A light absorbing layer is formed.
3. The method of claim 1, wherein: forming an asymmetric interdigital electrode on the surface of the light absorption layer by using a mask, comprising:
vacuumizing a sputtering cavity of the magnetron sputtering equipment and introducing argon;
and forming an asymmetric interdigital electrode on the surface of the light absorption layer by taking a metal material as a second sputtering target.
4. The method of claim 3, wherein the metal material is Au, Al, Ni, Pt, or Ti.
5. The method of claim 3, wherein the reticle is an asymmetric interdigitated reticle.
6. Based on (Al)xGa1-x)2O3The ultraviolet photodetector of the MSM structure is characterized in that the ultraviolet photodetector is prepared by the method of any one of claims 1-5; the ultraviolet photodetector includes: the device comprises a substrate layer (1), a light absorption layer (2) and asymmetric interdigital electrodes (3) which are vertically distributed from bottom to top.
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| Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum;Yuan, SH et al.;《IEEE ELECTRON DEVICE LETTERS》;20180228;II. EXPERIMENTAL，附图1b * |
| β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy;Oshima, T et al.;《JAPANESE JOURNAL OF APPLIED PHYSICS》;20090706;070202-1页左栏第2段至070202-1页右栏第2段，附图1-3 * |
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