CN110265504B - Ultraviolet photoelectric detector and preparation method thereof - Google Patents
Ultraviolet photoelectric detector and preparation method thereof Download PDFInfo
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- CN110265504B CN110265504B CN201910588485.3A CN201910588485A CN110265504B CN 110265504 B CN110265504 B CN 110265504B CN 201910588485 A CN201910588485 A CN 201910588485A CN 110265504 B CN110265504 B CN 110265504B
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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Abstract
The invention provides an ultraviolet photoelectric detector, which comprises a substrate, a source electrode and a drain electrode which are arranged on the substrate, and a quantum dot modified nanowire arranged on the substrate, wherein two ends of the quantum dot modified nanowire are respectively connected with the source electrode and the drain electrode; the quantum dot modified nanowire comprises an aluminum nitride nanowire and nickel oxide quantum dots, wherein the nickel oxide quantum dots are attached to the surface of the aluminum nitride nanowire and form a p-n junction with the aluminum nitride nanowire. According to the ultraviolet photoelectric detector provided by the invention, the p-n junction formed between the aluminum nitride nanowire and the nickel oxide quantum dot is utilized, so that the concentration of the aluminum nitride nanowire carrier is effectively increased, the photoconductive gain of the ultraviolet photoelectric detector is increased, and the detection of VUV rays by the ultraviolet photoelectric detector is realized.
Description
Technical Field
The invention relates to the field of ultraviolet photoelectric detectors, in particular to an ultraviolet photoelectric detector and a preparation method and application thereof.
Background
Most semiconductor ultraviolet light detectors work based on the photoconductive effect of semiconductor materials, namely ultraviolet light is used for irradiating semiconductor materials with proper forbidden band width, electrons in a valence band are transited to a conduction band to form non-equilibrium carriers, and the conductivity of the semiconductor materials is remarkably increased, so that the detection of ultraviolet light signals is realized. The ultraviolet photoelectric detector is concerned with due to the advantages of high visible light transmittance, good thermal stability and chemical stability, is widely applied to environmental monitoring, missile tracking, petroleum leakage detection, building protection and the like, and plays an important role in the fields of military, civil use and aerospace.
The ultraviolet light can be mainly divided into UV A (400-320nm), UV B (320-280nm), UV C (280-200nm), and VUV (200-10 nm). VUV semiconductor photodetectors have received much attention for their important applications in the vacuum ultraviolet spectrum. However, most wide bandgap semiconductor materials have a bandgap width less than 6eV, and cannot be applied to detection of VUV band ultraviolet light, so that the VUV band ultraviolet light detection technology is hindered.
Aluminum nitride (AlN), a typical III-V nitride semiconductor material, has a forbidden band width of 6.2eV, has a low dark current and a fast response speed, is an ideal material for manufacturing VUV ultraviolet photodetectors, and is therefore attracting much attention. However, the carrier concentration of AlN is low, and the existing AlN-based ultraviolet photodetector has a problem of low photoconductive gain, which hinders practical application of AlN in the ultraviolet detection technology.
Therefore, how to increase the carrier concentration of AlN and increase the photoconductive gain thereof, so that it can be applied to an ultraviolet light detector, is a problem to be solved at present.
Disclosure of Invention
The invention solves the problems that: how to increase the carrier concentration of AlN and increase the photoconductive gain of AlN, so that AlN can be applied to an ultraviolet light detector.
In order to solve the above problems, the present invention provides an ultraviolet photodetector, which includes a substrate, a source electrode and a drain electrode disposed on the substrate, and a quantum dot modified nanowire disposed on the substrate, wherein two ends of the quantum dot modified nanowire are respectively connected to the source electrode and the drain electrode; the quantum dot modified nanowire comprises an aluminum nitride nanowire and nickel oxide quantum dots, wherein the nickel oxide quantum dots are attached to the surface of the aluminum nitride nanowire and form a p-n junction with the aluminum nitride nanowire.
Optionally, the diameter of the aluminum nitride nanowire is 100-250 nm, and the length of the aluminum nitride nanowire is 30-100 μm.
Optionally, the diameter of the nickel oxide quantum dot is 5-7 nm.
Optionally, the attachment area of the nickel oxide quantum dots is smaller than the surface area of the aluminum nitride nanowires.
Optionally, the substrate is made of silicon oxide, mica, PET or polyimide.
Optionally, the source electrode and the drain electrode are Au, Al, Ag, Cu or In electrodes.
Optionally, the thickness of the source electrode and the thickness of the drain electrode are both 130-170 nm.
Optionally, the photoconductive gain of the ultraviolet photodetector is 9.96.
Another objective of the present invention is to provide a method for manufacturing the above ultraviolet photodetector, which includes the following steps:
s1, preparing the aluminum nitride nanowire by using a physical vapor transport method;
s2, depositing nickel oxide quantum dots on the surface of the aluminum nitride nanowire by using a laser pulse deposition method to obtain the quantum dot modified nanowire;
s3, spin-coating the quantum dot modified nanowire on a substrate, and drying to attach the quantum dot modified nanowire on the substrate;
and S4, patterning a source electrode and a drain electrode at two ends of the quantum dot modified nanowire to form the ultraviolet photoelectric detector.
Optionally, the method for patterning the source electrode and the drain electrode is at least one selected from a thermal evaporation coating technology, an electron beam evaporation technology and a magnetron sputtering technology.
Compared with the prior art, the photo-thermal joule heat synergistic membrane distillation assembly has the following advantages:
(1) according to the ultraviolet photoelectric detector provided by the invention, the p-n junction formed between the aluminum nitride nanowire and the nickel oxide quantum dot is utilized, so that the concentration of the aluminum nitride nanowire carrier is effectively increased, the photoconductive gain of the ultraviolet photoelectric detector is increased, and the detection of VUV rays by the ultraviolet photoelectric detector is realized.
(2) The preparation method of the ultraviolet photoelectric detector provided by the invention has the advantages of simple process implementation, good operability and good repeatability; when the prepared ultraviolet photoelectric detector receives 193nm ultraviolet radiation light, the ultraviolet photoelectric detector can respond within the range of 30-90ms, the magnitude of photocurrent is kept about 200nA, and the photoconductive gain reaches 9.96; the ultraviolet photoelectric detector has high photoconductive gain, high response speed and good stability.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural view of an ultraviolet photodetector according to the present invention;
FIG. 2 is a schematic diagram of the preparation of NiO quantum dots by laser pulse deposition according to the present invention;
FIG. 3 is a schematic diagram of an ultraviolet photodetector fabricated by ultraviolet lithography according to the present invention;
FIG. 4 is a schematic structural diagram of a testing system of the UV detector according to the present invention;
FIG. 5 is a voltage-photocurrent diagram of the UV detector of the present invention in the absence of illumination and 193nm illumination;
FIG. 6 is a graph of photocurrent versus time for the UV detector of the present invention;
FIG. 7 is a graph of On-Off time-photocurrent curve of the UV detector of the present invention;
fig. 8 is a time-photocurrent curve diagram of the uv photodetector of the present invention in a high temperature environment;
FIG. 9 is a flow chart of a method for manufacturing the UV detector according to the present invention;
fig. 10 is a current-photocurrent diagram of the uv photodetector without quantum dot modification and with quantum dot modification under illumination according to the present invention.
Description of reference numerals:
1-probe, 2-aluminum nitride nanowire, 3-electrode, 4-quantum dot, 5-substrate, 6-plasma plume, 7-target, 8-air valve, 9-window, 10-lens, and 11-laser beam.
Detailed Description
It should be noted that the features in the embodiments of the present invention may be combined with each other without conflict. The terms "comprising," "including," "containing," and "having" are intended to be inclusive, i.e., that additional steps and other ingredients may be added without affecting the result. The above terms encompass the terms "consisting of … …" and "consisting essentially of … …". Materials, equipment and reagents are commercially available unless otherwise specified.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Vacuum ultraviolet refers to radiation light with forbidden bandwidth lower than 200nm wavelength, and is named as vacuum ultraviolet because the radiation light with forbidden bandwidth lower than 200nm is easily absorbed by oxygen in the atmosphere; the detection of vacuum ultraviolet light plays an important role in the fields of military, civil use and aerospace. The forbidden band width of the aluminum oxide (AlN) is 6.2eV, and the AlN can be used for detecting radiation light with the wavelength lower than 193nm according to a calculation formula of energy and wavelength. In addition, AlN itself possesses good physicochemical properties, such as: wide band gap, high melting point, high critical breakdown field strength, high temperature thermal stability, chemical corrosion resistance and other excellent properties, so that the AlN is suitable for working in a severe environment. However, the AlN-based ultraviolet photodetector has a problem of low photoconductive gain due to the low carrier concentration of AlN.
In order to solve the above problems, in the embodiments of the present invention, aluminum oxide is prepared into a one-dimensional AlN nanowire structure, and the one-dimensional AlN nanowire structure and nickel oxide (NiO) form a p-n junction, so that the prepared ultraviolet photodetector can have ultrahigh photoconductive gain, and also has a fast response speed and low dark current, thereby realizing detection of VUV ultraviolet light with a wavelength of 193 nm.
With reference to fig. 1, an ultraviolet photodetector includes a substrate 5, a source electrode and a drain electrode disposed on the substrate 5, and a quantum dot modified nanowire disposed on the substrate 5, wherein two ends of the quantum dot modified nanowire are respectively connected to the source electrode and the drain electrode; the quantum dot modified nanowire comprises an aluminum nitride nanowire 2 and nickel oxide quantum dots 4, wherein the nickel oxide quantum dots 4 are attached to the surface of the aluminum nitride nanowire 2 and form a p-n junction with the aluminum nitride nanowire 2.
NiO is a p-type semiconductor device with the forbidden band width of 3.6-4.0 eV, has good thermal sensitivity, optical property, electrochemical activity, catalytic activity, chemical stability and electric conductivity, and is widely applied to the fields of battery electrodes, catalysis, photoelectricity and the like. AlN is an n-type semiconductor with a larger forbidden band width and is close to an insulator; in all p-type oxide semiconductors, the band gap of NiO is closest to that of AlN, and the NiO can form a p-n junction by lattice matching with AlN.
Specifically, the ultraviolet photoelectric detector provided by the embodiment of the invention is used for rapidly detecting an ultraviolet photoelectric signal with a wavelength of 193 nm. In order to avoid adverse effect of the substrate 5 on the test of the ultraviolet photoelectric detector, the substrate 5 is an insulating substrate, the material of the substrate 5 can be one of silicon oxide wafers, mica, PET or polyimide, and in the implementation of the invention, the material of the insulating substrate 5 is SiO2. The quantum dot modified nanowire is arranged on the upper end face (the face receiving ultraviolet light irradiation) of the substrate 5, and two ends of the quantum dot modified nanowire are respectively covered by the source electrode and the drain electrode, so that good contact between the quantum dot modified nanowire and the electrodes is ensured.
The quantum dot modified nanowire takes a one-dimensional AlN nanowire 2 as a main body, and NiO quantum dots 4 with high optical conductance gain are grown on the surface of the nanowire; the one-dimensional AlN nanowire 2 structure has a higher specific surface area, a faster vertical charge separation and transmission speed and a shorter transverse charge transmission distance, the carrier concentration of AlN can be improved, and the prepared ultraviolet photoelectric detector has higher response speed and response rate.
Meanwhile, the NiO quantum dots 4 are uniformly distributed on the surface of the AlN nanowire 2 and are mutually dispersed, the detection main body of the ultraviolet photoelectric detector is the AlN nanowire 2, and the NiO quantum dots 4 are arranged to form a p-n junction and enhance the carrier concentration of the AlN nanowire 2, so that the aim of enhancing a photocurrent signal is fulfilled. Therefore, the attachment area of the nickel oxide quantum dots 4 is smaller than the surface area of the aluminum nitride nanowire 2, that is, the NiO quantum dots 4 do not completely cover the AlN nanowire 2, so that ultraviolet light can effectively and simultaneously irradiate on the AlN nanowire 2 and the NiO quantum dots 4.
When the NiO quantum dots and the AlN nanowires are combined to form a p-n heterojunction, a built-in electric field is formed, and the NiO quantum dots and the AlN nanowires have a driving effect on charge separation. When 193nm ultraviolet radiation is irradiated onto a sample, a large number of electron-hole pairs are generated. Electrons in NiO and AlN absorb energy and jump from a valence band to a conduction band; however, because the conduction bands of NiO and AlN have energy level difference, a large number of electrons can be injected into the AlN nanowire in the process of transferring electrons in NiO from the conduction band of the NiO to the conduction band of AlN, and a large number of holes are captured by NiO quantum dots, so that the recombination of carriers is reduced; the electrons and holes move to the positive and negative electrodes, respectively. Therefore, under the irradiation of ultraviolet radiation light, the photocurrent is rapidly increased, and the modification of the NiO quantum dots effectively increases the photoconductive gain of the AlN nanowire.
Wherein the diameter of the aluminum nitride nanowire is 100-250 nm, and the length of the aluminum nitride nanowire is 30-100 mu m; the diameter of the nickel oxide quantum dots is 5-7 nm.
In the implementation of the invention, the prepared two electrodes 3 are made of metal Au, and the thicknesses of the source electrode and the drain electrode are 130-170 nm.
According to the ultraviolet photoelectric detector provided by the embodiment of the invention, the p-n junction formed between the aluminum nitride nanowire and the nickel oxide quantum dot is utilized, so that the concentration of carriers of the aluminum nitride nanowire is effectively increased, the photoconductive gain of the ultraviolet photoelectric detector is increased, and the ultraviolet of VUV (ultraviolet) rays is detected by the ultraviolet photoelectric detector. Based on the performances of aluminum nitride and nickel oxide, the ultraviolet photoelectric detector can work in severe environment, such as low-temperature vacuum environment.
With reference to fig. 9, the method for manufacturing the ultraviolet photodetector based on the quantum dot modified nanowire includes the following steps:
s1, preparing the aluminum nitride nanowire by using a physical vapor transport method;
s2, depositing nickel oxide quantum dots on the surface of the aluminum nitride nanowire prepared in the step S1 by using a laser pulse deposition method to obtain a quantum dot modified nanowire;
s3, dispersing the quantum dot modified nanowire prepared in the step S2 in a solution, spin-coating the solution on a substrate, and naturally drying, so that the quantum dot modified nanowire is attached to the substrate;
and S4, patterning a source electrode and a drain electrode at two ends of the nanowire modified by the quantum dots to form the ultraviolet photoelectric detector.
Specifically, in step S1, the preparation of the aluminum nitride (AlN) nanowire using a physical vapor transport method includes: AlN powder with the purity of 99.999 percent is used as an evaporation source and is placed in an induction heating furnace; the induction heating furnace is vacuumized to 3 x 10-4Pa, and purging with 99.999% nitrogen gas at 6.5X 10 in an induction heating furnace for 3 times4～8×104And under the condition of Pa, raising the temperature in the furnace to 1900-1950 ℃ at the speed of 22-26 ℃/min, preserving the temperature for 30-45 min, and then naturally cooling.
The diameter of the one-dimensional AlN nanowire obtained through the reaction is 100-250 nm, and the length of the one-dimensional AlN nanowire is 30-100 mu m.
Specifically, as shown in fig. 2, in step S2, the step of modifying NiO quantum dots on the AlN nanowire includes:
placing the AlN nanowire prepared in the step S1 at the position of the substrate in the picture 2, and placing the AlN nanowire in a vacuum chamber of a pulsed laser deposition system; and (3) using a NiO raw material as a target material, vacuumizing the vacuum cavity by using a mechanical pump and a molecular pump at room temperature, and then introducing oxygen, wherein the internal pressure is kept at 15 Pa. Ultraviolet laser emitted by a KrF excimer laser is focused by a lens and then is incident on a NiO target, the NiO target is bombarded by the laser to generate plasma plume, and the NiO plasma plume is deposited on the AlN nanowire, so that the NiO quantum dot modified AlN nanowire is finally obtained.
Wherein the target is a NiO ceramic disc with the diameter of 11mm, which is prepared by sintering NiO powder with the purity of 99.999% in a muffle furnace at 600 ℃ for 48-72 h.
In the preparation process, the vacuum degree of the vacuum cavity is not more than 2 multiplied by 10 < -3 > Pa; the output energy and the frequency of the laser are 150-200 mJ and 1-3 Hz respectively; the wavelength of ultraviolet laser emitted by a KrF excimer laser is 248 nm; the focal length of the lens is 30 cm; the time length of NiO plasma plume deposition is 10-30 min.
The diameter of the AlN nanowire modified by the NiO quantum dots prepared in the step S2 is 3-6 nm.
It can be understood that the NiO quantum dots are modified on the AlN nanowire to form p-n junctions, so that the carrier concentration of the AlN nanowire is enhanced. Therefore, on the premise of ensuring that electrons in NiO and AlN absorb energy, the density of NiO quantum dots on the surface of the AlN nanowire is better, so that the photoconductive gain of the ultraviolet photoelectric detector is improved sufficiently under the condition of not increasing the dark current and the response time of the photoelectric detector.
Specifically, step S3, attaching the quantum dot modified nanowire to the substrate includes the steps of:
(1) preparing quantum dot modified nanowire solution
And (3) adding an alcohol solution with a proper volume into the AlN nanowire modified by the NiO quantum dots prepared in the step (2) to prepare a solution, and carrying out ultrasonic treatment on the solution in an ultrasonic machine for 10 minutes to uniformly disperse the AlN nanowire modified by the NiO quantum dots in the solution. The concentration of the solution can be adjusted as required, and the alcohol solution can be replaced by other solutions capable of dispersing the nanowires, such as isopropyl alcohol.
(2) Transferring quantum dot modified nanowire solution onto substrate
Using commercial crystal face SiO2Cutting the substrate into small square blocks (the size can be changed as required), soaking in 75% sulfuric acid hydrogen peroxide solution at 85 deg.C for 30min, respectively soaking in acetone, isopropanol, ethanol and deionized waterSequentially performing ultrasonic treatment on the son water for 10min, and then drying the son water by using nitrogen for later use.
Taking out the cleaned SiO slice2The method comprises the following steps of coating the uniformly mixed quantum dot modified nanowire solution on a substrate in a dripping and spinning mode by using a spin coater, naturally drying, and uniformly scattering the quantum dot modified nanowire on SiO after alcohol is completely volatilized2The substrate, i.e. the quantum dot modified nanowire, is transferred to the substrate.
The substrate may also be a substrate with another insulating surface and a relatively flat surface, such as mica, PET, polyimide, or the like.
In step S4, a source electrode and a drain electrode are patterned at two ends of the quantum dot modified nanowire, where the patterning mode includes one of a thermal evaporation coating technique, an electron beam evaporation technique, or a magnetron sputtering technique.
The preparation of the graphical source electrode and the graphical drain electrode is realized by adopting an electron beam evaporation technology, including photoetching, electron beam exposure, electrode printing or using a hollow mask plate to shield a substrate for directly evaporating the electrode, and the like, so that the NiO quantum dot modified AlN nanowire-based ultraviolet photoelectric detector is obtained.
The sizes of the source electrode and the drain electrode can be limited by the hollow design of the mask, and a person skilled in the art can select the source electrode and the drain electrode with corresponding sizes according to actual needs, and the following specifically describes the preparation process of the source electrode and the drain electrode by taking a fancy mask as an example and combining fig. 3:
firstly, covering a photoresist and a mask plate on SiO2The surface of the substrate, which is attached with the quantum dot modified nanowire, is shown in a) and b), and the sample is sequentially SiO from bottom to top2A substrate, photoresist and a mask plate; as shown in fig. c), performing exposure by using an ultraviolet lithography machine to remove the photoresist that is not covered by the mask plate, that is, the photoresist that is covered by the mask plate still exists, but is not covered by the mask plate, and the photoresist exposed to the light is washed away by the chemical change; taking away the mask plate, depositing a gold film with the thickness of about 130-170 nm on the photoresist by electron beam evaporation, and covering the gold film on the sampleWherein, the gold film is preferably 150 nm; and f), exposing by using an ultraviolet photoetching machine again, removing the photoresist, and removing the gold film attached to the photoresist to leave the hollowed-out electrode of the mask plate.
In the embodiment of the present invention, the prepared electrodes (the source electrode and the drain electrode) are respectively connected to two ends of the quantum dot modified nanowire, and the distance between the source electrode and the drain electrode may be changed according to actual needs, which is not limited herein.
With reference to fig. 4, a method for detecting an ultraviolet photodetector according to an embodiment of the present invention includes: and placing the ultraviolet photoelectric detector based on the AlN nanowire modified by the NiO quantum dots on a probe table, and respectively pricking two probes on the source electrode and the drain electrode to perform photoelectric detection.
Specifically, a source electrode and a drain electrode of the ultraviolet photoelectric detector are connected with a test instrument through a probe, continuously variable bias voltage is applied to the ultraviolet photoelectric detector under the conditions of no illumination and ultraviolet illumination, a photocurrent curve corresponding to the bias voltage can be obtained, and whether the performance of the prepared ultraviolet photoelectric detector based on the NiO quantum dot modified AlN nanowire is improved or not can be conveniently determined.
As shown in fig. 5, when there is no illumination, the magnitude of the photocurrent is only 10-3nA order of magnitude; when the wavelength is 193nm and the energy is 3.49W/cm2When ultraviolet light is incident to the surface of the ultraviolet photoelectric detector, the photocurrent can reach 216nA, and the photocurrent is improved by 105And (4) doubling. Namely, the ultraviolet photoelectric detector based on the AlN nanowire modified by the NiO quantum dots realizes ultrahigh gain of photocurrent.
The photoconductive gain of the AlN nanowire-based ultraviolet photodetector not modified by the NiO quantum dots is only 0.368, and the photoconductive gain of the AlN nanowire-based ultraviolet photodetector modified by the NiO quantum dots is 9.96, i.e., the photoconductive gain multiplying factor of the AlN nanowire-based ultraviolet photodetector modified by the NiO quantum dots is about 27 times.
As shown in fig. 10, whether the quantum dot modified nanowire has a large influence on the AlN nanowire ultraviolet photodetector. When the AlN nanowire which is not modified by the NiO quantum dot is used, the photocurrent detected by the ultraviolet photoelectric detector is about 8.67 nA; when the AlN nanowire modified by the NiO quantum dot is used, the photocurrent detected by the ultraviolet photoelectric detector is about 216 nA. The embodiment of the invention can be seen in that the AlN nanowire modified based on the NiO quantum dots is adopted to prepare the ultraviolet photoelectric detector, so that the size of photocurrent detected by the AlN nanowire ultraviolet photoelectric detector can be effectively enhanced.
Fig. 6 is a graph showing the change of the detected photocurrent with time when the ultraviolet photodetector is operated under the irradiation of ultraviolet light with the wavelength of 193 nm. Fig. 6 uses an instrument 2602B manufactured by keithley, Rt being the time interval from 10% to 90% photocurrent, corresponding to the time interval after the laser is turned on when the detector current rises from dark current to photocurrent, also known as the rising edge time. Accordingly, Dt is the time interval from 90% photocurrent to 10% photocurrent, which corresponds to the time interval after the laser is turned off when the detector photocurrent drops to dark current, also referred to as the falling edge time. As can be seen from FIG. 6, the response time of the ultraviolet photodetector based on the AlN nanowire modified by the NiO quantum dots is 30-90ms, and the response speed of the ultraviolet photodetector is high.
Fig. 7 shows On-Off time-photocurrent curves of the uv photodetector under different voltage conditions, when the uv photodetector is intermittently turned On and Off (the On time of the uv light is 150 s-250 s, and the Off time is 3501 s-500 s) in a long-time test of 2500s under the irradiation of the uv light with a wavelength of 193 nm.
As can be seen from fig. 7, the magnitude of the photocurrent was maintained at around 30nA at a voltage of 5V during the long detection period of 2500s, and did not decrease with time. This shows that the ultraviolet photodetector based on the NiO quantum dot modified AlN nanowire provided in the embodiments of the present invention has very good stability.
As can be seen from fig. 8, in the NiO quantum dot modification-based AlN nanowire ultraviolet photodetector provided by the present invention, under a high temperature environment of 393K, the photocurrent level is maintained at 250nA, and the response time is 375 ms. The ultraviolet photoelectric detector based on the AlN nanowire modified by the NiO quantum dots still has good performance in a high-temperature environment.
The preparation method of the ultraviolet photoelectric detector provided by the embodiment of the invention has the advantages of simple process implementation, good operability and good repeatability. When the prepared ultraviolet photoelectric detector receives 193nm ultraviolet radiation light, the ultraviolet photoelectric detector can respond in the range of 30-90m s, the size of photocurrent is kept about 200nA, the photoconductive gain reaches 9.96, and the photoconductive gain is improved by about 27 times compared with that of a pure AlN nanowire ultraviolet photoelectric detector; the ultraviolet photoelectric detector has high photoconductive gain, high response speed and good stability.
Although the present disclosure has been described above, the scope of the present disclosure is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, and such changes and modifications will fall within the scope of the present invention.
Claims (10)
1. An ultraviolet photoelectric detector comprises a substrate, a source electrode and a drain electrode which are arranged on the substrate, and is characterized by also comprising a quantum dot modified nanowire which is arranged on the substrate, wherein two ends of the quantum dot modified nanowire are respectively connected with the source electrode and the drain electrode; the quantum dot modified nanowire comprises an aluminum nitride nanowire and a nickel oxide quantum dot, wherein the nickel oxide quantum dot is attached to the surface of the aluminum nitride nanowire and forms a p-n junction with the aluminum nitride nanowire; the ultraviolet photoelectric detector is a VUV ultraviolet photoelectric detector.
2. The UV photodetector of claim 1, wherein the aluminum nitride nanowires have a diameter of 100 to 250nm and a length of 30 to 100 μm.
3. The ultraviolet photodetector of claim 2, wherein the nickel oxide quantum dots have a diameter of 5-7 nm.
4. The uv photodetector of claim 1, wherein the nickel oxide quantum dots have an attachment area that is less than the surface area of the aluminum nitride nanowires.
5. The UV photodetector of claim 1, wherein the substrate is silicon oxide, mica, PET or polyimide.
6. The UV photodetector of claim 1, wherein the source and drain electrodes are Au, Al, Ag, Cu, or In electrodes.
7. The UV photodetector of claim 6, wherein the thickness of each of the source electrode and the drain electrode is 130-170 nm.
8. The UV photodetector of any one of claims 1 to 7, wherein the photoconductive gain of the UV photodetector is 9.96.
9. A method of manufacturing the ultraviolet photodetector of any one of claims 1 to 8, comprising the steps of:
s1, preparing the aluminum nitride nanowire by using a physical vapor transport method;
s2, depositing nickel oxide quantum dots on the surface of the aluminum nitride nanowire by using a laser pulse deposition method to obtain a quantum dot modified nanowire;
s3, spin-coating the quantum dot modified nanowire on a substrate, and drying to attach the quantum dot modified nanowire on the substrate;
and S4, patterning a source electrode and a drain electrode at two ends of the quantum dot modified nanowire to form the ultraviolet photoelectric detector.
10. The method of claim 9, wherein the source electrode and the drain electrode are patterned by at least one selected from thermal evaporation, electron beam evaporation, and magnetron sputtering.
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| CN112582486B (en) * | 2020-12-15 | 2023-09-26 | 广西大学 | NiO ultraviolet photoelectric detector and preparation method thereof |
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| CN113328004B (en) * | 2021-04-23 | 2022-11-01 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
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