CN113097334B - SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and preparation method and application thereof - Google Patents
SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and preparation method and application thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of ultraviolet-visible detection, and discloses a SiC-based tungsten disulfide ultraviolet-visible photoelectric detector, and a preparation method and application thereof. The detector is structured as a back electrode/n+SiC(360μm)/n‑SiC (11 μm)/symmetrical electrode/WS2Nanosheets; the detector is firstly made of SiO2Preparation of micron-sized irregular WS on a/Si substrate by mechanical stripping2Nanosheets; then, through PVA dry transfer process, WS is transferred2Transferring to SiC substrate with symmetric electrode deposited by photoetching and evaporation process, and attaching WS2Putting the SiC substrate of the PVA film into deionized water or dimethyl sulfoxide at 50-60 ℃ and heating to dissolve the PVA film; annealing at 100-250 ℃ in a protective atmosphere. The invention improves WS2The performance of the detector promotes the application and development of SiC-based two-dimensional material functional devices, and is beneficial to commercial popularization.
Description
Technical Field
The invention belongs to the technical field of ultraviolet-visible detection, and particularly relates to a SiC-based tungsten disulfide ultraviolet-visible photoelectric detector, and a preparation method and application thereof.
Background
The photoelectric detection technology is one of numerous technologies which influence the modern life of human beings, and the photoelectric device with high sensitivity, low noise, quick response and wide-spectrum detection is an urgent requirement for enriching and facilitating the daily life of people; SiC as a third-generation wide bandgap semiconductor has the advantages of high thermal conductivity, high breakdown field strength, high saturated electron migration rate, good ultraviolet-visible detection and the like. In the dark, SiC can act as an insulator to serve as a dielectric layer for the device; under suitable illumination, SiC can act as a semiconductor as an epitaxial photosensitive layer for the device. However, most of the existing SiC-based photodetectors are applied to the field of ultraviolet detection, and have little involvement in the field of ultraviolet-visible, and the potential of the SiC detector in high temperature resistance, high pressure resistance and wide spectrum detection is not fully exerted. Meanwhile, the photosensitive material selected by the SiC-based device still takes the wide bandgap oxide as the main material, such as Ga2O3ZnO, etc.
Since the graphene is successfully stripped in 2004, two-dimensional layered materials with atomic-scale thickness are emerging as a rich material system, such as black phosphorus, hexagonal boron nitride, graphdiyne, and the like. Wherein the transition metal chalcogenides (TMDCs) are WS2The light-absorbing material is formed by stacking layers in a sandwich connection mode under the mutual action of Van der Waals force, and has the characteristics of adjustable band gap of the layers and high light absorption efficiency. Generally, a single layer structure has a direct band gap, high carrier mobility and high fluorescence quantum yield, has excellent performance in applications of optoelectronic and light collecting devices such as tunneling transistors, ultra-thin photodetectors, light emitting diodes and the like, and different TMDCs materials can be freely stacked to form a heterojunction due to weak van der waals force combination and without considering lattice mismatch limitation, thereby obtaining novel optical and electrical properties that a single material does not have. However, WS2Most of the photoelectric detector is still made of SiO2the/Si substrate and the top metal-semiconductor contact dominate, which greatly limits further improvement of its electrical and optoelectronic properties. At the same time, most of the previous heterojunction stacks were WS2In combination with other two-dimensional materials, Si, GaAs, etc., these devices generally only utilize the conductivity and light absorption of another component, and do not achieve the effect of multifunctional regulation of photoelectric properties. Most importantly, the device manufactured on the material by photoetching patterns is easy to generate the problems of Fermi level pinning effect and the like at the metal-semiconductor interface, thereby causing larger dark current, low open-circuit current density and larger noise equivalent power, reducing the photosensitive area of the material and prolonging the transmission distance of photon-generated carriers, thereby reducing the sensitivity of the device,Specific detection rate and response time.
Disclosure of Invention
In order to overcome the defects and shortcomings of the prior art, the invention aims to provide an SiC-based tungsten disulfide ultraviolet-visible photoelectric detector. The detector has obvious Schottky contact phenomenon under dark condition and larger optical on-off ratio (10) under illumination4) Fast optical response (20-40 ms), high sensitivity (maximum R up to 60A/W, maximum specific detection rate up to 5 × 10)11Jones, external quantum efficiency of 238%), and n-SiC(11μm)/n+SiC (360 μm) substrate with bottom gate control WS2The characteristics of (1).
The invention also aims to provide a preparation method of the SiC-based tungsten disulfide ultraviolet-visible photodetector. The method adopts third generation wide bandgap semiconductor SiC (n)-SiC(11μm)/n+SiC (360 μm)) as a substrate, and tungsten disulfide (WS) was formed by previously vapor-depositing an electrode pattern of the same metal by photolithography2) The SiC substrate is a micron-sized epitaxial layer weak N type, is an insulator before illumination and is a semiconductor after illumination, so that the photoelectric detection performance of the device is enhanced, and the Fermi level pinning effect at the metal-semiconductor interface is weakened.
The purpose of the invention is realized by the following technical scheme:
a SiC-based tungsten disulfide ultraviolet-visible photoelectric detector is provided, wherein the detector is structured as a back electrode/n+SiC(360μm)/n-SiC (11 μm)/symmetrical electrode/WS2Nanosheets; the SiC-based tungsten disulfide ultraviolet-visible photoelectric detector adopts electron beams on n of a cleaned SiC substrate+Respectively evaporating back electrodes on SiC (360 μm) surface, and directly writing n on SiC substrate by lithography laser-Patterning the electrode on SiC (11 μm) surface by electron beam lithography, and forming a pattern on the electrode by electron beam lithography-Evaporating a symmetrical electrode on the surface of SiC (11 mu m); dripping PVA water solution on a PDMS film of the glass slide, heating at 50-60 ℃ to prepare a PDMS film/PVA film, naturally separating the PDMS film and the PVA film after cooling to room temperature, and attaching the PVA film to the WS on a three-dimensional transfer platform2Cooling to room temperature on the nano-chip, and then obtaining WS2Transferring PVA film to SiC substrate with evaporated symmetrical electrode to obtain WS on the SiC substrate2A PVA film; finally attach WS2Putting the SiC substrate of the PVA film into deionized water or dimethyl sulfoxide at 50-60 ℃ and heating to dissolve the PVA film; annealing at 100-250 ℃ in a protective atmosphere.
Preferably, said WS2The thickness of the nano sheet is 1-100 nm.
Preferably, the volume ratio of the mass of PVA in the PVA aqueous solution to the volume of deionized water is (2-12) g: (10-63) mL; the molecular weight of the PVA is 27000-205000.
Preferably, the protective atmosphere is nitrogen or argon.
Preferably, the back electrode is Ni-Ag, Ti-Au or Cr-Au; the symmetrical electrode is Ti/Au or Au.
The preparation method of the SiC-based tungsten disulfide ultraviolet-visible photoelectric detector comprises the following specific steps:
s1, n is-SiC(11μm)/n+Soaking the SiC (360 mu m) substrate in a buffer oxidation etching solution prepared by mixing hydrofluoric acid aqueous solution and ammonium fluoride aqueous solution, etching the oxide on the surface of the SiC substrate, respectively cleaning the SiC substrate with acetone, isopropanol and deionized water, and cleaning the SiC substrate with ozone;
s2, adopting electron beams to form a substrate n+Evaporating Ni/Ag of back electrode on SiC (360 μm) surface, and directly writing substrate n by photoetching laser-Patterning the electrode on SiC (11 μm) surface by photolithography, and applying electron beam to n of the patterned electrode-Evaporating a symmetrical electrode on the surface of SiC (11 mu m);
s3, strip WS through sticky tape machinery2Single crystal to cleaned SiO2On a/Si substrate, obtaining WS2Nanosheets;
s4, dripping a PVA aqueous solution on a PDMS film of the glass slide, heating at 50-60 ℃, preparing a PVA film on the PDMS film, naturally separating the PDMS film and the PVA film after cooling to room temperature, and attaching the PVA film to the WS on a three-dimensional transfer platform2Cooling to room temperature, and attaching WS2Taking down/transferring PVA film to evaporation symmetric electricSubstrate n of pole-On SiC (11 μm), WS was produced on the SiC substrate2A PVA film;
s5, attaching WS2Putting the SiC substrate of the PVA film into deionized water or dimethyl sulfoxide at 50-60 ℃ and heating to dissolve the PVA film; annealing at 100-250 ℃ in a protective atmosphere to obtain the SiC-based tungsten disulfide ultraviolet-visible photoelectric detector.
Preferably, the volume ratio of the hydrofluoric acid aqueous solution to the ammonium fluoride aqueous solution in the step S1 is (1-4): (6-24); the molar concentration of the hydrofluoric acid aqueous solution is 40-49%, and the molar concentration of the ammonium fluoride aqueous solution is 30-40%;
preferably, the soaking time in the step S1 is 3-5 min; the cleaning time is 5-10 min.
Preferably, the heating time in the step S4 is 10-20 min; the heating time in the step S5 is 15-60 min; the annealing time is 15-30 min.
The SiC-based tungsten disulfide ultraviolet-visible photoelectric detector is applied to the field of ultraviolet-visible light detection with quick light response or high sensitivity.
Compared with the prior art, the invention has the following beneficial effects:
1. the present invention first converts WS2N transferred to evaporation symmetric electrode-SiC(11μm)/n+On the SiC (360 μm) substrate, the Fermi level pinning effect at the metal-semiconductor interface is reduced, and the SiC and the WS are cooperatively exerted2Both have uv-vis absorption properties. Realizes high sensitivity (the light sensitivity is as high as 60A/W, the specific detectivity can reach 4.94 multiplied by 10 at most) under the irradiation of 405nm laser11Jones, external quantum efficiency 238%) for uv-visible detection.
2. The SiC-based tungsten disulfide ultraviolet photoelectric detector has larger optical switching ratio (10)4) Fast optical response (20-40 ms), high sensitivity (R is 60A/W at maximum, and specific detection rate is up to 5 x 10)11Jones, external quantum efficiency 238%) and with bottom gate control WS2The characteristics of (1);
3. n in the present invention-SiC(11μm)/n+The SiC (360 mu m) substrate is used as an insulator in the dark to reduce the leakage current, and is used as a semiconductor to form a grating layer in the light to enhance the photoelectric detection performance of the device, WS2the-SiC is II-type stack, the phenomenon that a large amount of photogenerated carriers can be generated and rapidly transferred is verified, and the-SiC can be widely applied to important fields of optical communication, medical imaging and the like.
4. The preparation method of the invention obviously improves WS2The performance of the detector promotes the application development of the SiC-based two-dimensional material functional device, and meanwhile, the device is simple in preparation process, mature in technology, low in cost and very beneficial to commercial popularization.
Drawings
FIG. 1 is a schematic structural view of a SiC-based tungsten disulfide UV-visible photodetector of the present invention;
FIG. 2 shows the laser power density at 405nm of the SiC-based tungsten disulfide UV-visible photodetector in example 1 is from 0.99mW cm-2To 185.61mW cm-2Varying WS on SiC substrate2Logarithmic form I of photodetectords-VdsA curve;
FIG. 3 shows the UV-visible spectrum of the SiC-based tungsten disulfide photodetector at V in example 1dsThe variation of photosensitivity and photocurrent with optical power at-2V;
FIG. 4 shows the UV-visible spectrum of the SiC-based tungsten disulfide photodetector at 405nm laser wavelength in example 1, VdsThe external quantum efficiency and specific detectivity at-2V varies with optical power density;
FIG. 5 shows the UV-visible spectrum of the SiC-based tungsten disulfide photodetector at 405nm laser wavelength in example 1, VdsOptical switching curves at different optical power densities when-2V;
fig. 6 is a graph showing the source-drain current variation with the gate voltage of the SiC-based tungsten disulfide ultraviolet-visible photodetector in example 1 under a dark condition when Vds is-1.5 v.
Detailed Description
The following examples are presented to further illustrate the present invention and should not be construed as limiting the invention. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art. Reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
PDMS in the examples of the present invention was purchased from Onvey technologies, Inc.
Example 1
1. Preparation:
(1) cleaning n-SiC(11μm)/n+SiC (360 μm) substrate. Ultrasonic substrate treatment with acetone, isopropanol and deionized water for 20 min; then introducing oxygen with the flow of 50sccm, wherein the power of plasma is 100W, and generating ozone for cleaning for 5 min;
(2) following 49% hydrofluoric acid (HF) aqueous solution: 40% ammonium fluoride (NH)4F) The aqueous solutions were mixed at a volume ratio of 1:6 to prepare a buffered oxide etching solution (BOE) solution. N obtained by washing in the step 1-SiC(11μm)/n+Soaking the SiC (360 mu m) substrate in a buffered oxide etching solution (BOE) for 4min to etch the oxide on the surface of the SiC substrate;
(3) respectively evaporating Ni-Ag of back electrode to substrate n by using electron beam evaporation equipment+SiC (360 μm) surface, then spin-coated with a positive photoresist model German ALLRESISTARP-5350 by spin-coating on a spin coater-On the surface of SiC (11 μm), setting the rotating speed of a spin coater at 3500rpm for 1min, heating and drying at 110 ℃ by using a heating plate for 4min, photoetching a symmetrical electrode pattern by using a 405nm ultraviolet laser direct writing photoetching machine, and evaporating by using an electron beam to obtain a Ti-Au electrode with the thickness of 4nm/60 nm;
(4) acetone, isopropanol and deionized water were used to treat 300nm SiO2Respectively carrying out ultrasonic treatment on the Si substrate for 20 min; then introducing oxygen with the flow of 50sccm, the plasma power is 100W, and the generated ozone is cleaned for 5min to obtain cleaned SiO2a/Si substrate; then by mechanically peeling WS on the tape2Single crystal to clean SiO2On a Si substrate, obtaining a large number of two-dimensional layered WS with micron size (20-60 μm)2The nanosheet has a thickness of 1 to 100 nm.
(5) Weighing 4g of PVA, adding the PVA into 21ml of deionized water, magnetically stirring for 12 hours to prepare PVA aqueous solution, and thenThe PVA aqueous solution is absorbed by a rubber head dropper to be cut on a PDMS film attached to a glass slide, the PDMS film is heated for 10min at 50 ℃ on a heating table to prepare a PVA film on the PDMS film, the PDMS film and the PVA film can be naturally separated after the temperature is reduced to room temperature, and the PVA film is attached to a WS on a three-dimensional transfer platform2On the nano-sheet, because the PVA film can be in a molten state at 85 ℃ or above, the PVA has viscosity at this time, and can be adhered to WS2Nanosheets, PVA and WS2Cooling to room temperature after 4-5min of nano-sheet adhesion, and attaching WS2Substrate n transferred to evaporation symmetric electrode Ti-Au from PVA film-On SiC (11 μm), WS was produced on the SiC substrate2A PVA film;
(6) attaching WS to step 52Heating the SiC substrate of the PVA film in deionized water at 50 ℃ for 30min, and blowing by a nitrogen gun to completely remove the coating on the WS2A PVA film on; and then annealing for 30 minutes at 150 ℃ in nitrogen gas to prepare the SiC-based tungsten disulfide ultraviolet-visible photodetector. The structure of the detector is a back electrode Ag-Ni/n+SiC(360μm)/n-SiC (11 μm)/Ti-Au symmetrical electrode/WS2Nanosheets.
2. And (3) performance testing:
FIG. 1 is a schematic structural view of a SiC-based tungsten disulfide UV-visible photodetector of the present invention, with an optical microscope view in the upper right inset; as can be seen from FIG. 1, the device is represented by n-SiC(11μm)/n+SiC (360 μm) as substrate, WS2The nanosheets being located on symmetrical electrodes, WS2The size of the nano-sheet between the electrodes is (10-30) mu m x (5-10) mu m. FIG. 2 shows the laser power density at 405nm of the SiC-based tungsten disulfide UV-visible photodetector of this example is from 0.99mW cm-2To 185.61mW cm-2Varying WS on SiC substrate2Logarithmic form I of photodetectords-VdsA curve; as can be seen from fig. 2, the photocurrent increases with increasing optical power density. FIG. 3 shows the UV-visible spectrum of the SiC-based tungsten disulfide photodetector of this embodiment at VdsThe variation of photosensitivity and photocurrent with optical power at-2V; as can be seen from FIG. 3, as the optical power density increases, the photocurrent increases graduallyAnd gradually increase in size. At the weakest optical power, the maximum optical sensitivity of the device is as high as 60A/W. FIG. 4 shows the UV-visible spectrum of the SiC-based tungsten disulfide photodetector of this embodiment under 405nm laser light, VdsThe external quantum efficiency and specific detectivity at-2V varies with optical power density; as can be seen from FIG. 4, the external quantum efficiency and specific detectivity gradually decrease with the increase of optical power density, and the specific detectivity of the device can reach 4.94 × 10 at most11Jones, external quantum efficiency was 238%. FIG. 5 shows the UV-visible spectrum of the SiC-based tungsten disulfide photodetector of this embodiment under 405nm laser light, VdsOptical switching curves at different optical power densities when-2V; as can be seen from FIG. 5, at-2V bias, the photocurrent increased with increasing optical power density, and the optical switching ratio was as high as 10 at maximum4. Fig. 6 is a curve of source-drain current with gate voltage variation when Vds is-1.5V in a dark condition of the SiC-based tungsten disulfide ultraviolet-visible photodetector of this embodiment. From FIG. 6, WS2The doping type is N-type and is mainly electron transport.
Example 2
The difference from example 1 is that: the back electrode is Ti-Au; the symmetrical electrode is Au.
Example 3
The difference from example 1 is that: the back electrode is Cr-Au.
The present invention first converts WS2N transferred to evaporation symmetric electrode-SiC(11μm)/n+On the SiC (360 μm) substrate, the Fermi level pinning effect at the metal-semiconductor interface is reduced, and the SiC and the WS are cooperatively exerted2Both have uv-vis absorption properties. Realizes the high-sensitivity ultraviolet-visible detection function under the irradiation of 405nm laser (the light sensitivity is as high as 60A/W, the specific detectivity can reach 4.94 multiplied by 10 to the maximum11Jones, external quantum efficiency 238%). The SiC-based tungsten disulfide ultraviolet photoelectric detector has larger optical switching ratio (10)4) Fast optical response (20-40 ms), high sensitivity (R is 60A/W at maximum, and specific detection rate is up to 5 x 10)11Jones, external quantum efficiency 238%) and with bottom gate control WS2The characteristics of (1).
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. The SiC-based tungsten disulfide ultraviolet-visible light photoelectric detector is characterized in that the detector is structurally a back electrode/n+SiC/n-SiC/symmetrical electrode/WS2Nanosheets; the SiC-based tungsten disulfide ultraviolet-visible photoelectric detector adopts electron beams on n of a cleaned SiC substrate+Respectively evaporating back electrodes on the SiC surface, and directly writing n on the SiC substrate by photoetching laser-Photoetching electrode pattern on SiC surface, and applying electron beam to n of the electrode pattern-Evaporating a symmetrical electrode on the surface of the SiC; dripping PVA water solution on a PDMS film of the glass slide, heating at 50-60 ℃ to prepare a PDMS film/PVA film, naturally separating the PDMS film and the PVA film after cooling to room temperature, and attaching the PVA film to the WS on a three-dimensional transfer platform2Cooling to room temperature on the nano-chip, and then obtaining WS2Transferring PVA film to SiC substrate with evaporated symmetrical electrode to obtain WS on the SiC substrate2A PVA film; finally attach WS2The SiC substrate of the PVA film is put into deionized water or dimethyl sulfoxide at 50-60 ℃ to be heated to dissolve the PVA film, and the PVA film is annealed at 100-250 ℃ in a protective atmosphere.
2. The SiC-based tungsten disulfide uv-vis photodetector of claim 1, wherein said WS2The thickness of the nano sheet is 1-100 nm.
3. The SiC-based tungsten disulfide ultraviolet-visible light photodetector of claim 1, wherein the volume ratio of PVA mass to deionized water in the aqueous PVA solution is (2-12) g: (10-63) mL; the molecular weight of the PVA is 27000-205000.
4. The SiC-based tungsten disulfide uv-vis photodetector of claim 1, wherein the protective atmosphere is nitrogen or argon.
5. The SiC-based tungsten disulfide uv-vis photodetector of claim 1, wherein said back electrode is Ni-Ag, Ti-Au or Cr-Au; the symmetrical electrode is Ti-Au or Au.
6. The method for preparing the SiC-based tungsten disulfide UV-visible photodetector according to any one of claims 1 to 5, comprising the following specific steps:
s1, mixing n-SiC/n+Soaking the SiC substrate in a buffered oxidation etching solution prepared by mixing a hydrofluoric acid aqueous solution and an ammonium fluoride aqueous solution, etching the oxide on the surface of the SiC substrate, respectively cleaning with acetone, isopropanol and deionized water, and cleaning with ozone;
s2, applying electron beam on the substrate n+Evaporating Ni/Ag on the surface of SiC by back electrode, and directly writing the substrate n by photoetching laser-Photoetching electrode pattern on SiC surface, and applying electron beam to n of the electrode pattern-Evaporating a symmetrical electrode on the surface of the SiC;
s3, mechanically peeling WS by adhesive tape2Single crystal to cleaned SiO2On a/Si substrate, obtaining WS2Nanosheets;
s4, dripping the PVA aqueous solution on the PDMS film of the glass slide, heating at 50-60 ℃, preparing the PVA film on the PDMS film, naturally separating the PDMS film and the PVA film after cooling to room temperature, and attaching the PVA film on the WS on a three-dimensional transfer platform2Cooling to room temperature, and attaching WS2Substrate n transferred to evaporation symmetric electrode from PVA film-On SiC, preparing WS on SiC substrate2A PVA film;
s5, WS will be attached2And putting the SiC substrate of the PVA film into deionized water or dimethyl sulfoxide at 50-60 ℃ for heating to dissolve the PVA film, and annealing at 100-250 ℃ in a protective atmosphere to prepare the SiC-based tungsten disulfide ultraviolet-visible photoelectric detector.
7. The method for preparing the SiC-based tungsten disulfide UV-visible photodetector as claimed in claim 6, wherein the volume ratio of said hydrofluoric acid aqueous solution to said ammonium fluoride aqueous solution in step S1 is (1-4): (6-24); the molar concentration of the hydrofluoric acid aqueous solution is 40-49%, and the molar concentration of the ammonium fluoride aqueous solution is 30-40%.
8. The method for preparing the SiC-based tungsten disulfide ultraviolet-visible photodetector as claimed in claim 6, wherein the soaking time in step S1 is 3-5 min; the cleaning time is 5-10 min.
9. The method for preparing the SiC-based tungsten disulfide ultraviolet-visible photodetector as claimed in claim 6, wherein the heating time in step S4 is 10-20 min; the heating time in the step S5 is 15-60 min; the annealing time is 15-30 min.
10. Use of the SiC-based tungsten disulfide uv-vis photodetector of any one of claims 1 to 5 in the field of fast photoresponse or high sensitivity uv-vis detection.
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