CN109449219A - Based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice - Google Patents
Based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice Download PDFInfo
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- CN109449219A CN109449219A CN201811096590.7A CN201811096590A CN109449219A CN 109449219 A CN109449219 A CN 109449219A CN 201811096590 A CN201811096590 A CN 201811096590A CN 109449219 A CN109449219 A CN 109449219A
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- monocrystalline
- thin slice
- solar blind
- ultraviolet detector
- blind ultraviolet
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000010931 gold Substances 0.000 claims abstract description 26
- 239000010936 titanium Substances 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000004332 silver Substances 0.000 claims abstract description 3
- 239000002390 adhesive tape Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 241000446313 Lamella Species 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000007645 offset printing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910003363 ZnMgO Inorganic materials 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, by β-Ga2O3Monocrystalline grade thin slice and electrode constitute Ohmic contact, and light absorbing layer is the β-Ga of monocrystalline2O3Mm band, the electrode are that one of titanium, gold, silver, platinum or multiple material are constituted.The present invention also proposes described based on β-Ga2O3The preparation method and application of the solar blind ultraviolet detector of monocrystalline grade thin slice.The invention proposes one kind to be based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, the detector have the characteristics that Ohmic contact and compared with high-responsivities.The method that the present invention is by mechanically pulling off obtains β-Ga2O3Lamella grows Ti/Au electrode using magnetically controlled sputter method, and to form solar blind ultraviolet detector, device obtained has many advantages, such as high Light To Dark Ratio, fast response time.
Description
Technical field
The invention belongs to optical technical fields, and in particular to one kind is based on β-Ga2O3Solar blind ultraviolet detector.
Background technique
Due to the absorption of ozone layer, the deep ultraviolet light that wavelength is 200-280nm, the light of the wave band there's almost no in earth's surface
Referred to as solar blind UV, and it is referred to as day blind ultraviolet detection for the signal detection of the wave band.Due to not by sunlight background
Influence, solar blind ultraviolet light signal detectivity is high, and accuracy rate is high, it is military and in terms of have it is extensive
Using Ultraviolet Communication especially day, blind Ultraviolet Communication just like had become the highest priority of various countries' military affairs contest.In addition to blind in day
Except application in Ultraviolet Communication, there are also the applications of other aspects for solar blind UV electric explorer, such as national defence early warning and tracking, life
The science of life, the detection of high-voltage line corona, ozone layer, detection of gas and analysis, flame sensing etc..
Ultraviolet detector currently on the market is vacuum ultraviolet detector part, compares it, the solid-state based on semiconductor material
Ultraviolet detector is increasingly becoming scientific research people since weight is small, low in energy consumption, quantum efficiency is high, is convenient for the features such as integrated in recent years
The research hotspot of member.The forbidden bandwidth of solar blind ultraviolet detector core semiconductor material is often greater than 4.4eV, studies ratio at present
More material concentrates on AlGaN, ZnMgO and diamond.But AlGaN is since its film needs very high temperature to grow and is difficult to outer
Prolong film forming, ZnMgO is difficult to remain above the band gap of 4.5eV under the structure of mono-crystlling fibre zinc ore, and diamond has fixed
The band gap of 5.5eV, corresponding wavelength 225nm only occupy the sub-fraction of day blind ultraviolet wavelength.And β-Ga2O3Forbidden bandwidth be about
4.9eV, corresponding wavelength 253nm, and be easy to and Al2O3And In2O3It forms continuous solid solution and realizes its covering completely in day-old chick
Lid, is a kind of oxide semiconductor candidate material for being very suitable for preparing solar blind UV electric explorer.And grope to be easy to make
β-Ga standby, best in quality2O3Solar blind ultraviolet detector technology is completely new challenge and opportunity that field of semiconductor materials faces.
Summary of the invention
Place in view of the shortcomings of the prior art, the purpose of the present invention is to provide a kind of formation Ohmic contact, can visit
Survey day-old chick ultraviolet light based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice.
Another object of the present invention is that proposition is described based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice
Preparation method.
Third object of the present invention is to propose the application of the solar blind ultraviolet detector.
Realize the technical solution of above-mentioned purpose of the present invention are as follows:
One kind being based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, by β-Ga2O3Monocrystalline grade thin slice
Ohmic contact is constituted with electrode, light absorbing layer is the β-Ga of monocrystalline2O3Mm band, the electrode are one of titanium, gold, silver, platinum
Or multiple material is constituted.
Wherein, the β-Ga2O3The width range of monocrystalline grade thin slice be 0.5~10mm, thickness range be 0.02~
0.2mm。
Wherein, the electrode is strip shaped electric poles, and the width range of electrode is 0.05~0.5mm, thickness range is 25~
230nm。
A preferred technical solution of the present invention is that the electrode is that titanium coating and gold metal layer are constituted；It is highly preferred that
The thickness range of titanium coating is 5~30nm, and the thickness range of gold metal layer is 20~200nm.
It is of the present invention to be based on β-Ga2O3The preparation method of the solar blind ultraviolet detector of monocrystalline grade thin slice, including step
It is rapid:
(1) use mechanical stripping method, the β-Ga for floating zone method being grown with adhesive tape2O3Monocrystalline carries out bonding removing, transfer
Onto substrate, maintains adhesive tape to be sticked on substrate and remove adhesive tape after 10~50h；
(2) β-Ga obtained by organic solvent cleaning step (1)2O3Lamella, it is dry；
(3) β-Ga for obtaining step (2)2O3The mask plate shielding of lamella hollow out, is prepared using magnetically controlled sputter method
Electrode.
Substrate need to be insulating materials.A kind of optimal technical scheme is provided herein are as follows:
The substrate is one of glass slide, glass plate, sapphire, and controlling between adhesive tape and substrate does not have bubble.Glue
Between band and glass slide cannot there are bubbles, otherwise cannot get complete β-Ga2O3Lamella.
A preferred technical solution of the present invention is, in step (1), after adhesive tape glues on substrate, to adhesive tape position
Apply 10~1500g/cm2Pressure, maintain 10~50h.
For example, the one side of adhesive tape is horizontally arranged upward, a weight is set on adhesive tape, weight range is 10~
200g keeps horizontal.
Wherein, in step (2), the organic solvent be one of acetone, ethyl alcohol, ethylene glycol, n-hexane or a variety of, clearly
The mode washed are as follows: infiltrate the β-Ga with organic solvent2O3Lamella 5~15 minutes.
It is highly preferred that successively sputtering titanium coating and gold metal layer in step (3), titanium coating and gold metal layer are obtained
Constitute the strip shaped electric poles of (Au/Ti), sputtering technology condition are as follows: back end vacuum range is 1 × 10-5~5 × 10-4Pa, underlayer temperature
For room temperature, operating air pressure range is 0.1~1.0Pa, and sputtering power range is 20~80W.
Optionally, in sputtering technology, work atmosphere is Ar gas.The sputtering time of titanium coating and gold metal layer depends on gold
Belong to the thickness of layer, for example, Ti layers of sputtering time is 5~60s, Au layers of sputtering time is 20~200s.
The application of solar blind ultraviolet detector of the present invention, which is characterized in that the day for detecting 200-280nm wavelength is blind
Ultraviolet light.
The beneficial effects of the present invention are:
The invention proposes one kind to be based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, the detector have
Ohmic contact and the characteristics of compared with high-responsivity.This detector technology is β-Ga2O3The application of solar blind UV electric explorer provides reason
By and technical support.
The method that the present invention is by mechanically pulling off obtains β-Ga2O3Lamella, using magnetically controlled sputter method growth Ti/Au electricity
Pole, to form solar blind ultraviolet detector, which has the characteristics that high Light To Dark Ratio, fast response time.β-Ga in the present invention2O3It is thin
The preparation of lamella uses mechanical stripping method, and passes through commercialized magnetron sputtering depositing Ti/Au metal layer and β-Ga2O3It is formed
Ohmic contact.Preparation method is easy to operate, at low cost, reproducible, before following photoelectric field centainly has huge application
Scape.
Detailed description of the invention
Fig. 1 is the β-Ga made from the method for the present invention2O3Grade thin slice solar blind ultraviolet detector structural schematic diagram；
Fig. 2 is I-V curve figure under dark situations；
Fig. 3 is the β-Ga made from the method for the present invention2O3Grade thin slice solar blind ultraviolet detector is at dark and 254nm
I-V curve comparison diagram；
Fig. 4 is the β-Ga made from the method for the present invention2O3Grade thin slice solar blind ultraviolet detector is in 15V bias and light intensity
For 400 μ W/cm2254nm illumination under I-t curve (3 circulation)；
Fig. 5 is the β-Ga made from the method for the present invention2O3Grade thin slice solar blind ultraviolet detector is in 15V bias and light intensity
For 400 μ W/cm2254nm illumination under I-t curve magnification figure and the response time fitting.
Specific embodiment
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
In embodiment, β-Ga used2O3Monocrystalline is floating zone method preparation.
Unless otherwise specified, means used in the examples are this field conventional technology.
Embodiment 1
Using mechanical stripping method, the β-Ga for being prepared floating zone method using adhesive tape2O3Monocrystalline carries out bonding removing, will glue
There is β-Ga2O3Lamellose adhesive tape adheres on clean glass slide, between adhesive tape and glass slide cannot there are bubbles, in glue after gluing
A weight, about 50g or so are set on band, keep glass slide horizontal.
After placing for 24 hours at room temperature, adhesive tape is gently torn with tweezers, has just obtained β-Ga2O3Lamella.Pass through microexamination
It is found that β-the Ga2O3Lamella length and width about 2 × 5mm, thickness 0.1mm.
It, can be with acetone to β-Ga to remove the included offset printing of adhesive tape2O3The net glass slide of lamella is cleaned, still
Operation is centainly careful, and slightly infiltration a moment (5 minutes), places dry in a vacuum drying oven later.
By the β-Ga of above-mentioned preparation2O3The mask plate shielding of lamella hollow out, using the successive splash-proofing sputtering metal of magnetically controlled sputter method
Ti layers (thickness about 30nm) and Au layers (thickness about 70nm), obtain the translucent Au/Ti electrode of strip of a wide 0.2mm.Sputtering
Process conditions are as follows: back end vacuum is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, and operating air pressure is
1.0Pa, the sputtering time that 45W, Ti layers of sputtering power are 1min, and Au layers of sputtering time is 3min.
β-Ga can be prepared by above-mentioned experimentation2O3Solar blind ultraviolet detector, structure are as shown in Figure 1.The β-
Ga2O3/ solar blind ultraviolet detector shows obvious ohmic contact characteristic under dark situations, as shown in Figure 2；This detector
Under 254nm ultraviolet light, it is still shown as Ohmic contact, as shown in Figure 3.β-the Ga2O3Solar blind ultraviolet detector has Europe
The characteristics of nurse contact and higher responsiveness.It is 400 μ W/cm that Fig. 4, which gives in 15V bias and light intensity,2254nm illumination under lead to
It crosses continuous lamp and turns on light and close the I-t curve that measures, 3 I-t circulations are repeated in we, which shows good repeatability.?
Under dark situations, the dark current of the detector is~1.8 × 10-9A, when light intensity is 400 μ W/cm2254nm ultraviolet light
Afterwards, electric current is rapidly increased to~2.8 × 10-7A, Light To Dark Ratio Iphoto/Idark≈156.By being further fitted, we learn this
Detector is 400 μ W/cm in 15V bias and light intensity2254nm illumination under rising response time τ r and die-away time τ d difference
For 0.64s and 0.16s, as shown in Figure 5.
Embodiment 2
Using mechanical stripping method, the β-Ga for being prepared floating zone method using adhesive tape2O3Monocrystalline carries out bonding removing, will glue
There is β-Ga2O3Lamellose adhesive tape adheres on clean glass slide, between adhesive tape and glass slide cannot there are bubbles, in glue after gluing
A weight, about 50g or so are set on band, keep glass slide horizontal.
After placing for 24 hours at room temperature, adhesive tape is gently torn with tweezers, has just obtained β-Ga2O3Lamella.Pass through microexamination
It is found that β-the Ga2O3Lamella length and width about 1 × 5mm, thickness 0.15mm.
It, can be with acetone to β-Ga to remove the included offset printing of adhesive tape2O3The net glass slide of lamella is cleaned, still
Operation is centainly careful, and slightly infiltration a moment (10 minutes), places dry in a vacuum drying oven later.
By the β-Ga of above-mentioned preparation2O3The mask plate shielding of lamella hollow out, using the successive splash-proofing sputtering metal of magnetically controlled sputter method
Ti layers (thickness about 30nm) and Au layers (thickness about 100nm), obtain the translucent Au/Ti electrode of strip of a wide 0.3mm.Sputtering
Process conditions are as follows: back end vacuum is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, and operating air pressure is
1.0Pa, the sputtering time that 45W, Ti layers of sputtering power are 1min, and Au layers of sputtering time is 4min.
Embodiment 3
Using mechanical stripping method, the β-Ga for being prepared floating zone method using adhesive tape2O3Monocrystalline carries out bonding removing, will glue
There is β-Ga2O3Lamellose adhesive tape adheres on clean glass slide, between adhesive tape and glass slide cannot there are bubbles, in glue after gluing
A weight, about 50g or so are set on band, keep glass slide horizontal.
After placing for 24 hours at room temperature, adhesive tape is gently torn with tweezers, has just obtained β-Ga2O3Lamella.Pass through microexamination
It is found that β-the Ga2O3Lamella length and width about 2 × 2mm, thickness 0.2mm.
It, can be with acetone to β-Ga to remove the included offset printing of adhesive tape2O3The net glass slide of lamella is cleaned, still
Operation is centainly careful, and slightly infiltration a moment (5 minutes), places dry in a vacuum drying oven later.
By the β-Ga of above-mentioned preparation2O3The mask plate shielding of lamella hollow out, using the successive splash-proofing sputtering metal of magnetically controlled sputter method
Ti layers (thickness about 20nm) and Au layers (thickness about 50nm), obtain the translucent Au/Ti electrode of strip of a wide 0.3mm.Sputtering
Process conditions are as follows: back end vacuum is 1 × 10-4Pa, underlayer temperature are room temperature, and work atmosphere is Ar gas, and operating air pressure is
1.0Pa, the sputtering time that 45W, Ti layers of sputtering power are 40s, and Au layers of sputtering time is 2min.
Embodiment that is disclosed above or requiring can be produced in the range of being no more than existing disclosed laboratory facilities or
Implement.All products and/or method described in the preferred embodiment of the present invention expressly refer to that those do not violate the present invention
Concept, scope and spirit can be used for the product and/or experimental method and following step.To in the technique
All changes and improvement of technological means, belong to concept, the scope and spirit that the claims in the present invention define.
Claims (10)
1. one kind is based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, which is characterized in that by β-Ga2O3Monocrystalline milli
Meter level thin slice and electrode constitute Ohmic contact, and light absorbing layer is the β-Ga of monocrystalline2O3Mm band, the electrode are titanium, gold, silver, platinum
One of or multiple material constitute.
2. according to claim 1 be based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, which is characterized in that
β-the Ga2O3The width range of monocrystalline grade thin slice is 0.5~10mm, and thickness range is 0.02~0.2mm.
3. according to claim 1 be based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice, which is characterized in that
The electrode is strip shaped electric poles, and the width range of electrode is 0.05~0.5mm, and thickness range is 25~230nm.
4. described in any item according to claim 1~3 be based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice,
It is characterized in that, the electrode is that titanium coating and gold metal layer are constituted；Preferably, the thickness range of titanium coating is 5~30nm,
The thickness range of gold metal layer is 20~200nm.
5. being based on β-Ga described in any one of Claims 1 to 42O3The preparation side of the solar blind ultraviolet detector of monocrystalline grade thin slice
Method characterized by comprising
(1) use mechanical stripping method, the β-Ga for floating zone method being grown with adhesive tape2O3Monocrystalline carries out bonding removing, is transferred to base
On piece maintains adhesive tape to be sticked on substrate and removes adhesive tape after 10~50h；
(2) β-Ga obtained by organic solvent cleaning step (1)2O3Lamella, it is dry；
(3) β-Ga for obtaining step (2)2O3The mask plate shielding of lamella hollow out prepares electricity using magnetically controlled sputter method
Pole.
6. preparation method according to claim 5, which is characterized in that the substrate is glass slide, in glass plate, sapphire
One kind, controlling between adhesive tape and substrate does not have bubble.
7. preparation method according to claim 5, which is characterized in that in step (1), after adhesive tape glues on substrate, to
Adhesive tape position applies 10~1500g/cm2Pressure, maintain 10~50h.
8. preparation method according to claim 5, which is characterized in that in step (2), the organic solvent is acetone, second
One of alcohol, ethylene glycol, n-hexane are a variety of, the mode of cleaning are as follows: infiltrate the β-Ga with organic solvent2O3Lamella 5~
15 minutes.
9. preparation method according to claim 5, which is characterized in that in step (3), successively sputter titanium coating and Jin Jin
Belong to layer, obtain the strip shaped electric poles that titanium coating and gold metal layer are constituted, sputtering technology condition are as follows: back end vacuum range is 1 × 10-5
~5 × 10-4Pa, underlayer temperature are room temperature, and operating air pressure range is 0.1~1.0Pa, and sputtering power range is 20~80W.
10. the application of any one of Claims 1 to 4 solar blind ultraviolet detector, which is characterized in that for detecting 200-
The solar blind UV of 280nm wavelength.
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| CN114597281A (en) * | 2022-02-26 | 2022-06-07 | 太原理工大学 | Doped with beta-Ga2O3And preparation method of ultraviolet detector of P-type diamond |
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