CN106711270A - Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof - Google Patents
Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof Download PDFInfo
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- CN106711270A CN106711270A CN201710012296.2A CN201710012296A CN106711270A CN 106711270 A CN106711270 A CN 106711270A CN 201710012296 A CN201710012296 A CN 201710012296A CN 106711270 A CN106711270 A CN 106711270A
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- gallium oxide
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 8
- 230000000873 masking effect Effects 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 11
- 239000004698 Polyethylene Substances 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 239000004800 polyvinyl chloride Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 150000004651 carbonic acid esters Chemical class 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000004044 response Effects 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- 239000011664 nicotinic acid Substances 0.000 abstract description 2
- 230000003993 interaction Effects 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and a preparation method thereof. The preparation method specifically comprises the following steps: preparing a gallium oxide micron band material by utilizing a vapor deposition method, by taking the band material as a light-sensitive material of solar-blind ultraviolet light, transferring the gallium oxide micron band material onto a flexible substrate, and preparing metal electrodes at two ends of the gallium oxide micron band by combining masking and vacuum coating methods so as to finally obtain the flexible gallium oxide-based solar-blind ultraviolet photoelectric detector. According to the preparation method disclosed by the invention, the flexible gallium oxide-based solar-blind ultraviolet photoelectric detector is prepared first by combining the flexible gallium oxide micron band material with the flexible substrate, and the device has the bending characteristic aiming at characteristic response and flexibility of the solar-blind ultraviolet light. The flexible detector has repeated bending restorability and can be applied to the fields of wearable detection equipment, curved screen interaction equipment, bionic tissues and the like. Moreover, the convenience and freedom degree of arrangement and design of the solar-blind photoelectric detection system can be greatly improved.
Description
Technical field
The present invention relates to a kind of solar blind UV electric explorer and preparation method thereof, more particularly, to a kind of flexible gallium oxide
Base solar blind UV electric explorer and preparation method thereof.
Background technology
Atmosphere claims to the light that the sunshine of 200-280 nm ultraviolet bands has strong absorption, 200-280nm wave bands
It is solar blind UV.The detection that is absorbed as artificial day blind UV signal of the atmosphere to solar blind UV provides a kind of natural low
Backdrop window.Solar blind UV electric explorer refers to have characteristic response to the solar blind light of 200-280nm, and to 280-800nm
Ultraviolet light and the ultraviolet detector that is not responding to of visible ray（Rikiya Suzuki, Shinji Nakagomi, and
Yoshihiro Kokubuna, Appllied Physics Letters, 2011, 98:131114）.At present, day is blind ultraviolet
Detector has been widely used in the fields such as missile warning, high-voltage line corona detection, medical diagnosis, near-earth secure communication.Pass
The solar blind UV electric explorer of system is all using the semiconductor film film preparation grown in rigid substrate, such as based on sapphire
The AlGaN ternary alloy films of Grown, or the MgZnO ternary alloy films grown in quartz substrate, therefore shortage can
The characteristic of bending.
Change with the mankind to electronic equipment demand, the element of electronic equipment internal is also required to be changed.Nowadays,
The mankind have stepped into an epoch for wearable device, and this kind equipment is it is desirable that flexible and new user interface.Electronics device
The bendability characteristics of part can greatly improve the free degree of the portability, setting and design of electronic equipment.Flexible solar blind light electricity
Detector has can be reversed and flexural property, can significantly expand its range of application, including wearable device, artificial bionic group
The emerging field such as knit.But up to the present, few reports on flexible solar blind UV electric explorer.
The gallium oxide of monocline is that have energy gap wider（~ 4.9 eV）Semiconductor, be suitable for day blind purple
The detection of outer light.Gallium oxide film, monocrystalline, nano wire, micro belt have been widely used for the preparation of solar blind ultraviolet detector.This
The gallium oxide micro belt of banding has excellent mechanical performance in the gallium oxide material of several different structures, particularly with very high
Pliability.Existing experiment shows that banding gallium oxide material restores to the original state completely after being bent at 180 °（Rujia Zou
, Zhenyu Zhang , Qian Liu , Junqing Hu , Liwen Sang , Meiyong Liao and Wenjun
Zhang, Small, 2014, 10:1848）.The excellent pliability of gallium oxide micro belt be its prepare flexible electronic device can
Row provides strong support.Therefore, by the combination of gallium oxide micro belt on flexible substrates, metal electrode is further prepared,
The flexible solar blind UV electric explorer of excellent performance can be prepared.
The content of the invention
Do not possess the problem of flexibility it is an object of the invention to be directed to existing gallium oxide solar blind UV electric explorer,
A kind of flexible, gallium oxide solar blind UV electric explorer that repeated flex test is with restorability and its preparation side are provided
Method.
The object of the present invention is achieved like this, the system of described a kind of flexible gallium oxide solar blind UV electric explorer
Preparation Method, it is characterised in that comprise the following steps：1）Gallium oxide micron carrying material is prepared using vapour deposition process；2）By gallium oxide
Micron carrying material is transferred in flexible substrate the light-sensitive material for serving as solar blind UV；3）In conjunction with mask and vacuum coating method
Metal electrode is prepared at the two ends for having been transferred to gallium oxide micro belt in flexible substrate, flexible gallium oxide day is finally prepared
Blind UV electric explorer.
Step 1）Growth gallium oxide micron carrying material vapour deposition process be physical vaporous deposition or chemical vapor deposition
Area method, growth apparatus are high temperature process furnances.
Step 2）The gallium oxide flexible substrate that is transferred to of micron carrying material be polyethylene terephthalate（PET）、
Makrolon（PC）, polyvinyl chloride（PVC）, polypropylene（PP）Or polyethylene（PE）Plastic tab.
Step 3）Gallium oxide micro belt two ends prepare metal electrode for Au, Ag, Ti, Ni, Cr or Al individual layer electricity
Pole or the composite bed electrode that they are combined.
The mask technique of the shape and size definition of the metal electrode is metal mask platemaking technology or photolithographic masking technique.
The vacuum coating method of the metal electrode is that magnetron sputtering coating method, electron beam evaporation deposition method or heat are steamed
Hair film plating process.
The metal electrode thickness is 50 ~ 1000nm.
Flexible gallium oxide solar blind UV electric explorer obtained in the above-mentioned preparation method of the present invention.
The technical scheme is that using the bendability characteristics of gallium oxide micron carrying material, being prepared with reference to flexible substrate soft
Property gallium oxide solar blind UV electric explorer.Gallium oxide micron carrying material first is prepared with vapour deposition process, by gallium oxide micron
Carrying material is transferred in flexible substrate the light-sensitive material for serving as solar blind UV, recycles vacuum coating method in gallium oxide micron
The two ends of band prepare metal electrode, finally prepare flexible gallium oxide solar blind UV electric explorer.
Specifically, the present invention is comprised the following steps：
1）Using the method for vapour deposition, growth gallium oxide micron carrying material；
2）Gallium oxide micron carrying material is transferred in flexible substrate the light-sensitive material for serving as solar blind UV；
3）The shape and size of metal electrode are defined by metallic mask or photolithographic masking technique；
4）Using vacuum deposition method metal electrode is prepared at the two ends of gallium oxide micro belt；
5）Prepare flexible gallium oxide solar blind UV electric explorer.
The growing method of gallium oxide micron carrying material is preferably chemical vapour deposition technique or physical vaporous deposition.
The flexible substrate preferably polyethylene terephthalate that gallium oxide micron carrying material is transferred to（PET）, poly- carbon
Acid esters（PC）, polyvinyl chloride（PVC）, polypropylene（PP）Or polyethylene（PE）Plastic tab substrate.
The shape and size of metal electrode prepared by the two ends of gallium oxide micro belt are preferably by metallic mask or photoetching
Technical definition；The composite bed electrode that metal electrode material is preferably Au, Ag, Ti, Ni, Cr, Al single-layer electrodes or they are combined.Gold
Belong to electrode prepares vacuum coating method preferably magnetron sputtering plating, electron beam evaporation deposition or thermal evaporation film plating process；Electricity
Pole gross thickness is preferably 50 ~ 1000nm.
Compared with existing solar blind UV electric explorer, the present invention has the advantages that following prominent：
1）Flexible gallium oxide solar blind UV electric explorer prepared by the present invention has repeated flex restorability, can apply
In fields such as wearable detecting devices, bending screen interactive device, bionical tissues, solar blind light electrical resistivity survey examining system can be greatly improved
The free degree of portability, setting and design.
2）The light-sensitive material of solar blind UV detection is gallium oxide micro belt, its own distinctive flexible, flexible nature
Ensure that flexible solar blind ultraviolet detector detection stability in the bent state.
3）Compared to gallium oxide single crystal, gallium oxide film and gallium oxide nano material, gallium oxide micron carrying material prepares letter
Single, repeatability is strong, and equipment cost is low, advantageously reduces the overall production cost of electronic device and detecting devices.
Brief description of the drawings
Fig. 1 is flexible gallium oxide solar blind UV electric explorer schematic diagram.
In figure marked as：5. gallium oxide micro belt；6. flexible substrate；7. metal electrode.
Fig. 2 is that the embodiment of the present invention prepares flexible gallium oxide solar blind UV electric explorer detailed process.
In figure marked as：1. growth gasses；2. quartz boat；3. gallium source；4. quartz substrate；5. gallium oxide micron
Band；6. flexible substrate；7. metal electrode.
Fig. 3 is the microphotograph of the gallium oxide micro belt of the growth of embodiment 1.
Flexible gallium oxide solar blind UV electric explorer microphotograph prepared by Fig. 4 embodiment 1.
Fig. 5 is the flexible gallium oxide solar blind UV electric explorer of the preparation of embodiment 1 in 10V biass, different curvature half
Response spectra under the case of bending in footpath.
Specific embodiment
Illustrated below by specific embodiment, with the substantive distinguishing features that the present invention is furture elucidated and marked improvement.
Embodiment 1
Referring to accompanying drawing 2, chemical vapour deposition technique method with high temperature process furnances as growth apparatus, with reaction gas oxygen and with carrier gas argon
Gas is mixed into growth gasses 1, and the gallium that 1g is filled in quartz boat 2 is gallium source 3, and gallium oxide micron is grown in quartz substrate 4
Band 5（The process a seen in Fig. 2）；The gallium oxide micro belt 5 that will be grown in quartz substrate is transferred to polyethylene terephthalate
（PET）Flexible substrate 6 on（The process b seen in Fig. 2）；Using magnetic-controlled sputtering coating equipment combination metallic mask, in oxidation
The two ends of gallium micro belt 5 are prepared using the metal electrode 7 of Au materials, and the thickness for using the metal electrode 7 of Au materials is 200nm
（The process c seen in Fig. 2）；Connection power supply carries out performance test（The process d seen in Fig. 2）.It is final to obtain flexible gallium oxide day
Blind UV electric explorer.
Fig. 3 is the microphotograph of the gallium oxide micro belt of physical vaporous deposition growth in embodiment 1, gallium oxide micron
Band shows good pliability, and 180 ° of bendings do not occur breakage phenomenon.
Fig. 4 is the flexible solar blind UV electric explorer microphotograph based on single gallium oxide micro belt in embodiment 1.
Fig. 5 be embodiment 1 in prepare flexible gallium oxide solar blind UV electric explorer 10V bias under, it is different
The photoelectric respone spectrum measured under bending radius.It can be seen that under differently curved state, gallium oxide solar blind UV electric explorer
Response spectra be held essentially constant, without there is obvious blue shift or Red Shift Phenomena, show the gallium oxide photodetector for preparing
Tool keeps good detection stability in the bent state.The crest of explorer response spectrum is the light of 255 nm, and cut-off is less than
280 nm, show that gallium oxide photodetector has good solar blind light detector sensitivity.
Embodiment 2
Referring to accompanying drawing 2, physical vaporous deposition method, with high temperature process furnances as growth apparatus, is growth with single carrier gas argon gas
Gas 1, fills the gallium oxide of 1g and the mixture of carbon dust as gallium source 3 in quartz boat 2, gallium oxide is grown in quartz substrate 4 micro-
Rice band 5（The process a seen in Fig. 2）；The gallium oxide micro belt 5 that will be grown in quartz substrate is transferred to polyvinyl chloride（PVC）Material
Flexible substrate 6 on（The process b seen in Fig. 2）；It is micro- in gallium oxide using electron beam evaporation deposition equipment combination metallic mask
Rice band 5 two ends prepare use Ti/Au composite beds metal electrode 7, use Ti/Au composite beds metal electrode 7 thickness for
300nm（The process c seen in Fig. 2）；Connection power supply carries out performance test（The process d seen in Fig. 2）.It is final to obtain flexible gallium oxide
Base solar blind UV electric explorer.
Embodiment 3
Referring to accompanying drawing 2, physical vaporous deposition method, with high temperature process furnances as growth apparatus, is growth with single carrier gas argon gas
Gas 1, fills the gallium oxide and carbon dust of 1g as gallium source 3 in quartz boat 2, gallium oxide micro belt 5 is grown in quartz substrate 4（See
Process a in Fig. 2）；The gallium oxide micro belt 5 that will be grown in quartz substrate is transferred to polyethylene（PE）The flexible substrate 6 of material
On（The process b seen in Fig. 2）；Using thermal evaporation filming equipment combination photolithographic masking technique, prepared at the two ends of gallium oxide micro belt 5
Using the metal electrode 7 of Ni/Au composite beds, the thickness for using the metal electrode 7 of Ni/Au composite beds is 500nm（See in Fig. 2
Process c）；Connection power supply carries out performance test（The process d seen in Fig. 2）.It is final to obtain flexible gallium oxide solar blind UV electricity
Detector.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the present invention patent with
Modification, should all belong to covering scope of the invention.
Claims (8)
1. a kind of preparation method of flexible gallium oxide solar blind UV electric explorer, it is characterised in that comprise the following steps：1）
Gallium oxide micron carrying material is prepared using vapour deposition process；2）Gallium oxide micron carrying material is transferred to and serves as day in flexible substrate
The light-sensitive material of blind UV；3）Gallium oxide micro belt in flexible substrate is being had been transferred in conjunction with mask and vacuum coating method
Two ends prepare metal electrode, finally prepare flexible gallium oxide solar blind UV electric explorer.
2. a kind of preparation method of flexible gallium oxide solar blind UV electric explorer as claimed in claim 1, its feature exists
In step 1）The vapour deposition process of growth gallium oxide micron carrying material be physical vaporous deposition or chemical vapour deposition technique, it is raw
Equipment long is high temperature process furnances.
3. a kind of preparation method of flexible gallium oxide solar blind UV electric explorer as claimed in claim 1, its feature exists
In step 2）The gallium oxide flexible substrate that is transferred to of micron carrying material be polyethylene terephthalate（PET）, poly- carbonic acid
Ester（PC）, polyvinyl chloride（PVC）, polypropylene（PP）Or polyethylene（PE）Plastic tab.
4. a kind of preparation method of flexible gallium oxide solar blind UV electric explorer as claimed in claim 1, its feature exists
In step 3）Gallium oxide micro belt two ends prepare metal electrode for Au, Ag, Ti, Ni, Cr or Al single-layer electrodes or it
The composite bed electrode that combines.
5. a kind of preparation method of flexible gallium oxide solar blind UV electric explorer as claimed in claim 1, its feature exists
The mask technique defined in the shape and size of the metal electrode is metal mask platemaking technology or photolithographic masking technique.
6. the preparation method of a kind of flexible gallium oxide solar blind UV electric explorer as described in claim 1 or 4, its feature
It is that the vacuum coating method of the metal electrode is magnetron sputtering coating method, electron beam evaporation deposition method or thermal evaporation plating
Film method.
7. the preparation method of a kind of flexible gallium oxide solar blind UV electric explorer described in claim 1 or 4, its feature exists
In the metal electrode thickness be 50 ~ 1000nm.
8. flexible gallium oxide solar blind UV electric explorer obtained in any described preparation methods of claim 1-7.
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| CN201710012296.2A CN106711270A (en) | 2017-01-09 | 2017-01-09 | Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof |
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| CN201710012296.2A CN106711270A (en) | 2017-01-09 | 2017-01-09 | Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183138A (en) * | 2017-12-15 | 2018-06-19 | 中山大学 | A kind of photoelectric device based on two-dimentional micro belt and preparation method thereof |
| CN108615784A (en) * | 2018-05-30 | 2018-10-02 | 金康康 | A kind of fiberglass-based self-powered flexibility tin oxide/gallium oxide hetero-junction thin-film ultraviolet detector and preparation method thereof |
| CN108660417A (en) * | 2018-05-31 | 2018-10-16 | 北京镓族科技有限公司 | A kind of self-supporting Ga2O3Film and preparation method thereof |
| CN108767048A (en) * | 2018-05-31 | 2018-11-06 | 北京镓族科技有限公司 | A kind of flexibility day blind detector and preparation method thereof |
| CN109449219A (en) * | 2018-09-19 | 2019-03-08 | 北京镓族科技有限公司 | Based on β-Ga2O3The solar blind ultraviolet detector of monocrystalline grade thin slice |
| CN109698278A (en) * | 2018-12-18 | 2019-04-30 | 哈尔滨工业大学 | A kind of organo-mineral complexing structure is from driving solar blind ultraviolet detector and preparation method |
| CN109950135A (en) * | 2019-03-25 | 2019-06-28 | 深圳第三代半导体研究院 | A kind of gallium oxide nano material transfer method |
| CN111341860A (en) * | 2020-03-23 | 2020-06-26 | 郑州大学 | Based on one-dimensional CsCu2I3Polarized ultraviolet light detector of micron line and preparation method thereof |
| CN111463299A (en) * | 2020-04-17 | 2020-07-28 | 中国科学院半导体研究所 | Direct detector based on gallium oxide solar blind ultraviolet polarized light and polarization imaging device |
| CN115117188A (en) * | 2022-06-22 | 2022-09-27 | 南京航空航天大学 | Multi-surface near-infrared polarization detector based on antimony selenide micron band and preparation method |
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