CN210245515U - Deep ultraviolet MSM detector based on local surface plasmon effect - Google Patents
Deep ultraviolet MSM detector based on local surface plasmon effect Download PDFInfo
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- CN210245515U CN210245515U CN201921000730.6U CN201921000730U CN210245515U CN 210245515 U CN210245515 U CN 210245515U CN 201921000730 U CN201921000730 U CN 201921000730U CN 210245515 U CN210245515 U CN 210245515U
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Abstract
The utility model provides a deep ultraviolet MSM detector based on local surface plasmon effect, its structure is supreme including down: the device comprises a substrate, a buffer layer, an ultra-short period superlattice and a metal electrode; the ultra-short period superlattice comprises a nanopore array arranged in the ultra-short period superlattice and metal nanoparticles; the metal nano particles are injected into the gaps of the nano hole array or deposited on the upper surface of the ultra-short period superlattice, and the particle size can be regulated and controlled; the metal electrode is disposed on the ultra-short period superlattice to form a schottky contact. The utility model discloses a form metal nanoparticle in the nanopore battle array of orderly distribution and set up metal electrode on it again, avoided the more weak problem of ultrashort period superlattice absorbed layer carrier tunneling ability, utilize the local surface plasmon effect of production again, the absorption of reinforcing deep ultraviolet light finally improves the quantum efficiency of deep ultraviolet MSM detector.
Description
Technical Field
The utility model relates to a semiconductor optoelectronic device makes the field, especially a deep ultraviolet MSM detector based on local surface plasmon effect.
Background
With the cognition of ultraviolet light by people at the end of the 19 th century, the ultraviolet detection technology rapidly rises, is widely applied to the military and civil fields, and becomes a hot point of concern at home and abroad. The MSM detector is one of important members of an ultraviolet detector family, and compared with detectors with other structures, the MSM detector has the advantages of high responsivity, high ultraviolet/visible light rejection ratio, high response speed, low dark current and the like.
AlGaN materials are well known as the preferred materials for uv and deep uv detectors because of their wide band gap, high thermal conductivity, and high electron mobility. However, the dislocation density of AlGaN materials is generally high, and it is still difficult to reduce the dislocation density of AlGaN bulk materials during epitaxy, which also poses a challenge to the performance of detectors. In recent years, it has become an effective approach to improve the light absorption efficiency of detectors by using the localized surface plasmon effect generated by metal nanoparticles. This is because the metal nanoparticles can resonate with energy under illumination of a specific wavelength, charge accumulation and oscillation effects are generated, and the scattering enhancement characteristics of the formed localized surface plasmon polaritons in the far field have a significant advantage of increasing the light absorption rate, and thus the external quantum efficiency of the detector will be improved finally.
The Chinese patent application 201810708469.9 proposes a deep ultraviolet MSM detector structure with a nanopore array penetrating through an ultrashort period superlattice, wherein a metal electrode is arranged on the nanopore array penetrating type ultrashort period superlattice, and simultaneously metal is injected into a gap of the nanopore array, so that the metal electrode can collect carriers generated by the deeper superlattice, and the collection efficiency of the metal electrode and the response photocurrent of a device are improved. However, the quantum efficiency of the detection structure still cannot meet the actual requirement, and further improvement of the quantum efficiency of the deep ultraviolet MSM detector with the structure is urgently needed.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a deep ultraviolet MSM detector based on local surface plasmon effect has distributed in order on the nanopore array structure basis of ultrashort period superlattice, introduces metal nanoparticle and produces local surface plasmon effect, utilizes local surface plasmon effect effectively to strengthen the light absorption, further promotes the responsivity and the quantum efficiency of this structure deep ultraviolet MSM detector.
The utility model adopts the following technical scheme:
deep ultraviolet MSM detector based on local surface plasmon effect, its characterized in that: comprises a substrate, a buffer layer, an ultra-short period superlattice and a metal electrode from bottom to top; the ultra-short period superlattice is provided with a nano-pore array and metal nano-particles, the nano-pore array is orderly distributed in the ultra-short period superlattice, the metal nano-particles are injected into gaps of the nano-pore array or deposited on the upper surface of the ultra-short period superlattice, and the particle size can be regulated and controlled; the metal electrode is disposed on the ultra-short period superlattice to form a schottky contact.
The substrate is a homogeneous substrate, and the homogeneous substrate is gallium nitride or aluminum nitride single crystal.
The substrate is a heterogeneous substrate, and the heterogeneous substrate is sapphire, silicon carbide or monocrystalline silicon.
The ultra-short period superlattice is formed by alternately growing two semiconductor materials with different forbidden band widths.
The two semiconductor materials with different forbidden band widths are any two of gallium nitride single crystal or aluminum gallium nitrogen mixed crystal.
The metal nano-particles are any one of rhodium particles, silver particles or aluminum particles.
The diameter range of the metal nano-particles is 20nm-70 nm.
The period range of the nanopore array is 200nm-600 nm.
The metal electrode is any one of gold, chromium/gold, nickel/gold and titanium/gold combination.
From the above description of the present invention, compared with the prior art, the present invention has the following advantages:
the utility model provides a deep ultraviolet MSM detector based on local surface plasmon effect through form metal nanoparticle in the nanopore array of ultrashort period superlattice in the distribution in order, produces local surface plasmon effect to effective reinforcing is to the absorption of deep ultraviolet photon, further improves the responsivity and the quantum efficiency of deep ultraviolet MSM detector.
Drawings
Fig. 1 is the structure diagram of the deep ultraviolet MSM detector based on the local surface plasmon effect of the present invention. Wherein 1 represents a substrate, 2 represents a buffer layer, 3 represents an ultra-short period superlattice, 4 represents metal nanoparticles, 5 represents a metal electrode, and 6 represents a nanopore array.
Detailed Description
The present invention will be further described with reference to the following detailed description. The utility model discloses an each drawing only is the schematic in order to understand more easily the utility model discloses, its specific proportion can be adjusted according to the design demand. In the drawings, the relative relationship of elements in the drawings as described above should be understood by those skilled in the art to mean that the relative positions of the elements are correspondingly determined by the elements on the front and the back for easy understanding, and therefore, the elements may be turned over to present the same elements, and all should fall within the scope of the present disclosure.
The utility model discloses a deep ultraviolet MSM detector based on local surface plasmon effect, its device structure from the bottom up includes in proper order: the structure comprises a substrate 1, a buffer layer 2, an ultra-short period superlattice 3, metal nano particles 4 distributed in a nano hole array of the ultra-short period superlattice and metal electrodes 5.
The substrate 1 of the present invention is a homogeneous substrate or a heterogeneous substrate. When the substrate 1 is a homogeneous substrate, it is a gallium nitride or aluminum nitride single crystal; when the substrate 1 is a foreign substrate, it is sapphire or silicon carbide or single crystal silicon. In the present embodiment, if the substrate 1 is a sapphire substrate, the aluminum nitride buffer layer 2 with a thickness of about 1 μm can be epitaxially grown due to the large lattice mismatch between the sapphire substrate and the gan single crystal.
The ultra-short period superlattice 3 of the utility model is any one of gallium nitride/aluminum gallium nitride combination or aluminum gallium nitride/aluminum nitride combination or gallium nitride/aluminum nitride combination, and forms a periodically ordered nano-pore array structure through technologies such as nano-imprinting, inductive coupling plasma etching and the like; the nano-pore array arranged on the ultra-short period superlattice has adjustable period and size, the period range is 200nm-600nm, and the size (diameter) range is 70nm-130 nm.
The utility model discloses a metal nanoparticle pours into nanopore battle array space or deposits in ultrashort period superlattice upper surface, and particle size can be regulated and control. The metal nanoparticles 4 distributed in the nanopore array of the ultrashort-period superlattice are prepared by a high-vacuum thermal evaporation and rapid thermal annealing process, and the size of the metal nanoparticles can be regulated and controlled by changing the high-vacuum thermal evaporation time, the annealing temperature and the annealing time. Preferably, the aluminum metal nanoparticles are selected for the embodiment, and the diameter of the aluminum metal nanoparticles can be adjusted within a range of 20nm to 70 nm.
The metal electrode 5 of the present invention is manufactured by a standard photolithography process, and may be any one of gold, chrome/gold, nickel/gold, and titanium/gold. Preferably, nickel/gold is selected as the metal electrode in this embodiment.
The utility model discloses deep ultraviolet MSM detector based on local surface plasmon effect, specific preparation method is as follows:
1) and carrying out epitaxial growth on the c surface of the sapphire substrate by adopting a metal organic gas phase epitaxy technology. Trimethyl gallium (TMGa) and trimethyl aluminum (TMAl) are respectively used as a gallium source and an aluminum source,high purity ammonia (NH)3) As nitrogen source, hydrogen gas is used as carrier gas.
2) On the basis of step 1), the sapphire substrate 1 is placed in H2Removing the surface contamination in the atmosphere at the high temperature of 1100 ℃ and the pressure of a reaction chamber of 100 Torr; the temperature was then lowered to 800 ℃ and TMAl and NH were added under a pressure of 500Torr in the reaction chamber3An approximately 1 micron thick buffer layer 2 of aluminum nitride is grown on the substrate 1.
3) Alternately growing gallium nitride and aluminum nitride with about 300 periods on the aluminum nitride buffer layer 2 in the step 2) to form an ultrashort period superlattice. By changing TMGa, TMAl and NH3The flow rate and the growth time are used for controlling the growth thickness of the gallium nitride and the aluminum nitride.
4) And 3) forming an orderly-distributed nanopore array with the period of 460nm, the aperture of 120nm and the aperture depth of 300nm on the ultrashort-period superlattice in the step 3) by utilizing the technologies of nano imprinting, inductively coupled plasma etching and the like.
5) And 4) depositing a metal aluminum film with the thickness of 10nm by adopting a high vacuum thermal evaporation technology on the nano-pore array structure of the ultra-short period superlattice in the step 4) in order.
6) The metal electrode is prepared by the following specific steps:
6.1) standard cleaning is carried out on the epitaxial wafer, and ultrasonic cleaning is carried out on the epitaxial wafer in acetone, ethanol and high-purity deionized water for 10 minutes respectively in sequence; then, using deionized water to enhance washing to remove organic matters; drying the surface by using nitrogen; and then, using AZ5214E photoresist to carry out gluing, spin coating and pre-baking processes, aligning and exposing by a Germany Karl Sussma6/BA6 type double-sided alignment photoetching machine, and then forming an interdigital electrode pattern by using methods such as reverse baking, flood exposure, development and the like.
6.2) vacuum degree of 10 at room temperature-6A nickel/gold complex metal layer was deposited to a thickness of 10nm and 200nm based on the substrate obtained in the step 6.1) in a Temescal FC2000 high vacuum thermal evaporation system of Torr.
And 6.3) soaking and stripping the photoresist by using an acetone solution, and only the metal deposited on the interdigital electrode is remained.
7) Annealing the sample obtained in the step for 60s at the low temperature of 400 ℃ in the nitrogen atmosphere to form an aluminum nanoparticle structure, and simultaneously forming Schottky contact between a nickel/gold electrode and a nanopore array type ultrashort period superlattice embedded in the aluminum nanoparticles. Thus, the preparation of the deep ultraviolet MSM detector is completed.
The above-mentioned be the utility model discloses a concrete implementation way, nevertheless the utility model discloses a design concept is not limited to this, and the ordinary use of this design is right the utility model discloses carry out immaterial change, all should belong to the act of infringement the protection scope of the utility model.
Claims (9)
1. A deep ultraviolet MSM detector based on local surface plasmon effect is characterized in that: comprises a substrate, a buffer layer, an ultra-short period superlattice and a metal electrode from bottom to top; the ultra-short period superlattice is provided with a nano-pore array and metal nano-particles, the nano-pore array is orderly distributed in the ultra-short period superlattice, the metal nano-particles are injected into gaps of the nano-pore array or deposited on the upper surface of the ultra-short period superlattice, and the particle size can be regulated and controlled; the metal electrode is disposed on the ultra-short period superlattice to form a schottky contact.
2. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the substrate is a homogeneous substrate, and the homogeneous substrate is gallium nitride or aluminum nitride single crystal.
3. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the substrate is a heterogeneous substrate, and the heterogeneous substrate is sapphire, silicon carbide or monocrystalline silicon.
4. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the ultra-short period superlattice is formed by alternately growing two semiconductor materials with different forbidden band widths.
5. The deep ultraviolet MSM detector based on local surface plasmon effect of claim 4, wherein: the two semiconductor materials with different forbidden band widths are any two of gallium nitride single crystal or aluminum gallium nitrogen mixed crystal.
6. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the metal nano-particles are any one of rhodium particles, silver particles or aluminum particles.
7. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the diameter range of the metal nano-particles is 20nm-70 nm.
8. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the period range of the nanopore array is 200nm-600 nm.
9. The deep ultraviolet MSM detector based on the local surface plasmon effect of claim 1, wherein: the metal electrode is any one of gold, chromium/gold, nickel/gold and titanium/gold combination.
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| CN110364584A (en) * | 2019-06-28 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect |
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| CN110364584A (en) * | 2019-06-28 | 2019-10-22 | 厦门大学 | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect |
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