CN114628983A - GaAs/ErAs single crystal/GaAs broadband saturable absorption device - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- Nanotechnology (AREA)
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- Optics & Photonics (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a GaAs/ErAs single crystal/GaAs broadband saturable absorption device which comprises a GaAs/ErAs single crystal/GaAs saturable absorption layer and an optical element required for bearing the saturable absorption layer. The GaAs/ErAs single crystal/GaAs broadband saturable absorption device has a reflection type structure and a transmission type structure; wherein the distribution of the materials of the reflection-type saturable absorber device from top to bottom is as follows: a functional layer, a saturable absorption layer, an optical substrate and a reflective layer; the distribution of the materials of the transmission type saturable absorption device from top to bottom is as follows: a functional layer, a saturable absorber layer, and an optical substrate. The GaAs/ErAs single crystal/GaAs broadband saturable absorption device does not need low-temperature growth, can obtain ultra-fast relaxation time by depending on a single crystal film material heterostructure, and has wide application prospect in the fields of pulse lasers and the like because the defect density of a saturable absorption layer is low and the reliability and consistency of the device are good.
Description
Technical Field
The invention relates to a GaAs/ErAs single crystal/GaAs broadband saturable absorption device, and belongs to the technical field of lasers.
Background
Compared with a continuous laser, the pulse laser has the advantages of short pulse width, high peak power and the like, and is widely applied to the fields of basic research, communication, medical treatment, industrial precision machining and the like. The passive Q-switching/mode-locking technology based on the saturable absorption device is the most effective technical means for realizing the pulse laser. The achievement of high quality saturable absorber devices to meet the demands of various pulsed laser applications has long been a focus of research in the laser field.
In the nineties of the 20 th century, the successful development of semiconductor saturable absorber mirrors (SESAMs) was a major breakthrough in the development of pulsed laser technology. SESAMs are increasingly becoming the most widely used and commercially viable saturable absorber devices, thanks to the precise and mature semiconductor material growth process and the complete set of nonlinear control schemes developed for the devices themselves. However, limited by the choice of the material of the absorption layer and the device structure design, SESAMs themselves still have some technical bottlenecks, such as that in order to obtain a faster relaxation time, the saturated absorption layer is mainly prepared or processed by using a low-temperature growth or ion implantation method, which directly results in the degradation of the material quality of the absorption layer, and thus the SESAMs has a lower damage threshold, and is not good for pulsed laser application, which is especially serious for SESAMs with multiple quantum well structure design.
In the past decades, researchers successively find that low-dimensional materials such as carbon nanotubes, graphene, transition metal disulfide, black phosphorus and the like have remarkable saturable absorption performance and can be used for preparing broadband saturable absorption devices. However, most of the above low-dimensional materials are prepared by liquid phase stripping or post-transfer methods, the crystallization quality of the materials is difficult to control, a large number of defects are inevitably present in the devices, and the repeatability is poor.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a GaAs/ErAs single crystal/GaAs broadband saturable absorption device. The device provided by the invention has remarkable absorption characteristic in a broadband spectrum range, has relatively fast relaxation time, does not need any post-processing process, and greatly improves the reliability and consistency of the device.
The technical scheme adopted by the invention is as follows:
a GaAs/ErAs single crystal/GaAs broadband saturable absorption device uses GaAs/ErAs single crystal/GaAs as saturable absorption layer; the GaAs/ErAs single crystal/GaAs broadband saturable absorber device comprises a GaAs/ErAs single crystal/GaAs saturable absorber layer and an optical element required for bearing the saturable absorber layer.
Furthermore, the GaAs/ErAs single crystal/GaAs broadband saturable absorber device has a reflection type structure and a transmission type structure; the distribution of materials of the reflection-type saturable absorber device from top to bottom is as follows: a functional layer, a saturable absorption layer, an optical substrate and a reflective layer; the distribution of the materials of the transmission type saturable absorption device from top to bottom is as follows: a functional layer, a saturable absorber layer, and an optical substrate.
Further, the functional layer comprises an optical coating and a passivation layer; the optical coating is a single-layer coating or a multi-layer coating, the coating material is one or more of titanium dioxide, zirconium oxide, zinc selenide, zinc sulfide and magnesium fluoride, and the optical coating has different reflectivities at the working wavelength by controlling the thickness of the coating and selecting different coating material combinations, so that the saturable light intensity of the device is regulated and controlled; the thickness of the optical coating film is 0.001-100 μm; the passivation layer is made of silicon dioxide or aluminum oxide, and the thickness of the passivation layer is 0.01-100 mu m.
Further, the saturable absorption layer material distribution from top to bottom: the upper layer of gallium arsenide, the middle layer of erbium arsenide single crystal film and the lower layer of gallium arsenide; the upper layer of gallium arsenide is a protective layer with the thickness of 5-10nm, the middle layer of erbium arsenide single crystal film with the thickness of 0.01-1 μm, and the lower layer of gallium arsenide is a growth buffer layer with the thickness of 50-100 nm.
Furthermore, the optical substrate is a double-sided polished gallium arsenide substrate, is highly transparent in a broadband spectrum range, and has a thickness of 0.1-5 mm.
Further, the reflective layer includes a distributed bragg mirror or an optical film having a high reflectivity.
The GaAs/ErAs single crystal/GaAs broadband saturable absorption device is applied to a pulse laser.
Has the advantages that:
the GaAs/ErAs single crystal/GaAs broadband saturable absorber provided by the invention has the characteristics of ultra-fast relaxation time, high material crystallization quality, good reliability and consistency, and has the potential advantage of directly replacing the traditional saturable absorber. The GaAs/ErAs single crystal/GaAs saturable absorption layer has obvious absorption characteristics in a broadband spectrum range due to the interface state of the ErAs/GaAs and the sub-band gap transition from the ErAs valence band to the GaAs conduction band, has fast relaxation time (<400fs), does not need any post-processing process, and greatly improves the reliability and consistency of devices. The saturable absorption device has the characteristics that the saturable absorption device is not available in the prior art, so that the saturable absorption device can generate stable and high-repeatability laser pulses in a broadband spectrum range.
Drawings
FIG. 1 is a graph of the transmission of a GaAs/ErAs single crystal/GaAs saturable absorber layer over a wide spectral range (1-4.7 μm).
FIG. 2 is a graph of the relaxation of photogenerated carriers at a wavelength of 1.55 μm for a GaAs/ErAs single crystal/GaAs saturable absorber layer.
FIG. 3 is a schematic view of a reflective GaAs/ErAs single crystal/GaAs broadband saturable absorber device in example 1.
FIG. 4 is a schematic view of a transmissive GaAs/ErAs single crystal/GaAs broadband saturable absorber device in example 2.
Fig. 5 is a design scheme of a solid-state pulse laser based on a transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device in example 3.
FIG. 6 shows the design scheme of a solid-state pulsed laser based on a reflective GaAs/ErAs single crystal/GaAs broadband saturable absorber device in example 4.
FIG. 7 shows the design scheme of the fiber pulse laser based on the transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device in example 5.
FIG. 8 shows the design of a fiber pulse laser based on a reflective GaAs/ErAs single crystal/GaAs broadband saturable absorber device in example 6.
Detailed Description
The present invention is described in further detail below with reference to the attached drawing figures.
A GaAs/ErAs single crystal/GaAs broadband saturable absorption device uses GaAs/ErAs single crystal/GaAs as saturable absorption layer 2; the GaAs/ErAs single crystal/GaAs broadband saturable absorption device comprises a GaAs/ErAs single crystal/GaAs saturable absorption layer 2 and an optical element required for bearing the saturable absorption layer 2.
The GaAs/ErAs single crystal/GaAs broadband saturable absorption device has a reflection type structure and a transmission type structure; the material distribution of the reflection-type GaAs/ErAs single crystal/GaAs broadband saturable absorber device from top to bottom is as follows: a functional layer 1, a saturable absorption layer 2, an optical substrate 3 and a reflective layer 4; the material distribution of the transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorber device from top to bottom is as follows: functional layer 1, saturable absorption layer 2, optical substrate 3.
The functional layer 1 comprises an optical coating and a passivation layer; the optical coating is a single-layer coating or a multi-layer coating, the coating material is one or more of titanium dioxide, zirconium oxide, zinc selenide, zinc sulfide and magnesium fluoride, and the optical coating has different reflectivities at the working wavelength by controlling the thickness of the coating and selecting different coating material combinations, so that the saturable light intensity of the device is regulated and controlled; the thickness of the optical coating film is 0.001-100 μm; the passivation layer is silicon dioxide (SiO)2) Or aluminum oxide (Al)2O3) The materials are highly transparent, stable in physical and chemical properties, high in hardness and non-toxic, play a role in protecting an optical coating and a saturable absorption layer from mechanical damage, and are beneficial to improving the safety and reliability of devices; the thickness of the passivation layer is 0.01-100 μm.
The saturable absorption layer 2 is distributed from top to bottom: upper gallium arsenide (GaAs), middle erbium arsenide single crystal film (ErAs), lower gallium arsenide (GaAs); the upper gallium arsenide (GaAs) layer is a protective layer with a thickness of 5-10nm, the middle erbium arsenide single crystal film (ErAs) layer is 0.01-1 μm, and the lower gallium arsenide (GaAs) layer is a growth buffer layer with a thickness of 50-100 nm.
The optical substrate 3 is a double-sided polished gallium arsenide (GaAs) substrate, is highly transparent in a broadband spectrum range, has the thickness of 0.1-5mm, is mature in preparation process and smooth in surface, and is very suitable for growing GaAs/ErAs single crystal/GaAs saturable absorption layers and reflection layers.
The reflecting layer 4 is a distributed bragg reflector or an optical thin film with high reflectivity, and the optical thin film with high reflectivity is a gold film or a silver film.
A preparation method of a GaAs/ErAs single crystal/GaAs broadband saturable absorption device comprises the following steps:
growing a GaAs/ErAs single crystal/GaAs saturable absorption layer 2 on one side of an optical substrate 3 by a molecular beam epitaxy technology, wherein the growth sequence is as follows in sequence: the lower layer gallium arsenide (GaAs), the erbium arsenide single crystal film (ErAs) and the upper layer gallium arsenide (GaAs) with high crystallization quality;
evaporating a reflecting layer 4 on the other side of the optical substrate 3 by using molecular beam epitaxy, electron beam evaporation, pulsed laser deposition or magnetron sputtering technology;
evaporating a functional layer 1 on the surface of the upper gallium arsenide (GaAs) by using electron beam evaporation, pulsed laser deposition or magnetron sputtering technology again;
wherein, the growth rate of the erbium arsenide ErAs single crystal film is monitored in situ by high-energy electron reflection, and the growth rate is controlled at 200 nm/h.
The GaAs/ErAs single crystal/GaAs saturable absorption layer is grown on the optical substrate by Molecular Beam Epitaxy (MBE). The GaAs/ErAs single crystal/GaAs saturable absorption layer prepared by the method has high crystallization quality, good reliability and consistency and stable nonlinear optical performance.
In the process of growing the GaAs/ErAs single crystal/GaAs saturable absorption layer by molecular beam epitaxy, the GaAs/ErAs single crystal/GaAs saturable absorption device with different modulation depths and nonlinear loss is prepared by accurately designing the thickness of the GaAs/ErAs single crystal/GaAs saturable absorption layer and the reflectivity of the reflection layer.
Example 1: the embodiment provides a design scheme of a reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device.
With reference to fig. 2, the specific scheme is as follows: growing a 100nm lower gallium arsenide (GaAs), a 70nm erbium arsenide single crystal film (ErAs) and a 5nm upper gallium arsenide (GaAs) on one side of a GaAs substrate in sequence by using a molecular beam epitaxy technology, evaporating a 1-micron gold film on the other side of the GaAs substrate by using electron beam evaporation, and finally depositing 50nm aluminum oxide (Al) on the surface of the upper gallium arsenide (GaAs) by using pulse laser deposition2O3) As a passivation layer. In this example, the specific growth conditions for the GaAs/ErAs single crystal/GaAs saturable absorber layer are as follows: at 9X 10-6As of torr2Heating the GaAs substrate under pressure to remove oxide from the surface of the substrate; an Er source with the purity of-99.995% is used to grow a GaAs buffer layer with the thickness of 100nm at the temperature of a substrate of-580 ℃, then a high-quality erbium arsenide (ErAs) single crystal film is grown at the temperature of the substrate of-500 ℃, and finally 5nm of upper gallium arsenide (GaAs) is grown to be used as an upper protective layer. We used high energy electron Reflection (RHEED) to monitor the growth rate of erbium arsenide (ErAs) single crystal film in situ, and control the growth rate at 200 nm/h.
Example 2: the embodiment provides a design scheme of a transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorber device.
Referring to fig. 3, the specific scheme is as follows: growing a lower gallium arsenide (GaAs) layer of 100nm, an erbium arsenide single crystal film (ErAs) layer of 70nm and an upper gallium arsenide (GaAs) layer of 5nm on one side of a GaAs substrate in sequence by using a molecular beam epitaxy technology, and finally depositing aluminum oxide (Al) of 50nm on the surface of the upper gallium arsenide (GaAs) layer by using pulse laser2O3) As a passivation layer. In this example, the specific growth conditions for the GaAs/ErAs single crystal/GaAs saturable absorber layer are as follows: at 9X 10-6As of torr2Heating the GaAs substrate under pressure to remove oxide from the surface of the substrate; an Er source with the purity of-99.995% is used to grow a GaAs buffer layer with the thickness of 100nm at the temperature of a substrate of-580 ℃, then a high-quality erbium arsenide (ErAs) single crystal film is grown at the temperature of the substrate of-500 ℃, and finally 5nm of upper gallium arsenide (GaAs) is grown to be used as an upper protective layer. We used high energy electron Reflection (RHEED) to monitor the growth rate of erbium arsenide (ErAs) single crystal thin films in situThe speed is controlled to be 200 nm/h.
Example 3: the embodiment provides a design scheme of a solid pulse laser based on a transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device.
FIG. 5 is a design scheme of a solid-state pulsed laser based on a transmissive GaAs/ErAs single crystal/GaAs broadband saturable absorber device. The laser resonator comprises a semiconductor pump source 5, a first plano-concave lens 6, a gain crystal 7, a transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorber 8 and an output coupling mirror 9, and pulse laser is generated in a resonant cavity by utilizing the saturable absorption effect of the transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorber 8.
Example 4: the embodiment provides a design scheme of a solid pulse laser based on a reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device.
FIG. 6 is a design scheme of a solid-state pulsed laser based on a reflective GaAs/ErAs single crystal/GaAs broadband saturable absorber device. The laser resonator comprises a semiconductor pump source 5, a first plano-concave lens 6, a second plano-concave lens 10, a gain crystal 7, an output coupling mirror 9 and a reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device 11, and pulse laser is generated in a resonant cavity by utilizing the saturable absorption effect of the reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device 11.
Example 5: the embodiment provides a design scheme of a fiber pulse laser based on a transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device.
FIG. 7 shows the design scheme of the fiber pulse laser of the transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device. The laser resonator comprises a pumping source 5, a wavelength division multiplexer 12, a gain fiber 13, an isolator 14, a beam splitter 15, a fiber collimator 16, a focusing lens 17 and a transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device 8, and pulse laser is generated in a resonant cavity by utilizing the saturable absorption effect of the transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorption device 8.
Example 6: the embodiment provides a design scheme of a fiber pulse laser based on a reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device.
FIG. 8 shows the design scheme of the fiber pulse laser of the reflective GaAs/ErAs single crystal/GaAs broadband saturable absorber device. The laser resonator comprises a pumping source 5, a beam combiner 18, a gain fiber 13, a fiber collimator 16, a focusing lens 17, a reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device 11 and a low-reflectivity fiber grating 19, and pulse laser is generated in a resonant cavity by utilizing the saturable absorption effect of the reflection type GaAs/ErAs single crystal/GaAs broadband saturable absorption device 11.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the invention is not limited to the specific embodiments described herein and that various obvious changes, adaptations and substitutions are possible, without departing from the scope of the invention.
Claims (7)
1. A GaAs/ErAs single crystal/GaAs broadband saturable absorption device is characterized in that GaAs/ErAs single crystal/GaAs is used as a saturable absorption layer (2); the GaAs/ErAs single crystal/GaAs broadband saturable absorption device comprises a GaAs/ErAs single crystal/GaAs saturable absorption layer (2) and an optical element required for bearing the saturable absorption layer (2).
2. The GaAs/ErAs single crystal/GaAs broadband saturable absorber device of claim 1, wherein the GaAs/ErAs single crystal/GaAs broadband saturable absorber device has both reflective and transmissive structures;
the material distribution of the reflection-type GaAs/ErAs single crystal/GaAs broadband saturable absorber device from top to bottom is as follows: the optical film comprises a functional layer (1), a saturable absorption layer (2), an optical substrate (3) and a reflecting layer (4);
the material distribution of the transmission type GaAs/ErAs single crystal/GaAs broadband saturable absorber device from top to bottom is as follows: the optical film comprises a functional layer (1), a saturable absorption layer (2) and an optical substrate (3).
3. GaAs/ErAs single crystal/GaAs broadband saturable absorber device according to claim 2, wherein the functional layer (1) comprises an optical coating and a passivation layer; the optical coating is a single-layer coating or a multi-layer coating, the coating material is one or more of titanium dioxide, zirconium oxide, zinc selenide, zinc sulfide and magnesium fluoride, and the optical coating has different reflectivities at the working wavelength by controlling the thickness of the coating and selecting different coating material combinations, so that the saturable light intensity of the device is regulated and controlled; the thickness of the optical coating film is 0.001-100 μm; the passivation layer is made of silicon dioxide or aluminum oxide, and the thickness of the passivation layer is 0.01-100 mu m.
4. GaAs/ErAs single crystal/GaAs wide band saturable absorber device according to claim 2, wherein the saturable absorber layer (2) has a material distribution from top to bottom: the upper layer of gallium arsenide, the middle layer of erbium arsenide single crystal film and the lower layer of gallium arsenide; the upper layer of gallium arsenide is a protective layer with the thickness of 5-10nm, the middle layer of erbium arsenide single crystal film with the thickness of 0.01-1 μm, and the lower layer of gallium arsenide is a growth buffer layer with the thickness of 50-100 nm.
5. GaAs/ErAs single crystal/GaAs wide band saturable absorber device according to claim 2, characterized in that the optical substrate (3) is a double-side polished GaAs substrate, highly transparent in the wide band spectral range and 0.1-5mm thick.
6. GaAs/ErAs single crystal/GaAs broadband saturable absorber device according to claim 2, characterized in that the reflective layer (4) comprises a distributed bragg mirror or an optical thin film with high reflectivity.
7. A pulsed laser comprising a GaAs/ErAs single crystal/GaAs broadband saturable absorber device according to any one of claims 1 to 6.
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| CN202011471890.6A Pending CN114628983A (en) | 2020-12-14 | 2020-12-14 | GaAs/ErAs single crystal/GaAs broadband saturable absorption device |
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2020
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