CN116387955A - Silicon-based IV-group alloy material infrared saturable absorber - Google Patents
Silicon-based IV-group alloy material infrared saturable absorber Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 239000000956 alloy Substances 0.000 title claims abstract description 68
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 37
- 239000010410 layer Substances 0.000 claims abstract description 114
- 238000010521 absorption reaction Methods 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000002346 layers by function Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 20
- 229910005898 GeSn Inorganic materials 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 15
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 13
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 12
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical group [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- KAJBHOLJPAFYGK-UHFFFAOYSA-N [Sn].[Ge].[Si] Chemical group [Sn].[Ge].[Si] KAJBHOLJPAFYGK-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 230000010354 integration Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses an infrared saturable absorber based on a silicon-based IV alloy material, which uses a strain compensation quantum well structure based on the IV alloy material as a saturable absorber layer, wherein the working wavelength is covered by 1.9-2.5 mu m, and the device parameters have adjustable characteristics; the device comprises a saturable absorber layer and the optical elements required to carry the saturable absorber layer. Wherein the reflective saturable absorber device has the following material distribution: the optical device comprises a functional layer (1), an optical substrate (2), a buffer layer (3), a saturable absorption layer (4) and a reflecting layer (5), wherein the saturable absorption layer adopts a strain compensation quantum well structure; the transmission type saturable absorber consists of a functional layer (1), an optical substrate (2), a buffer layer (3) and a saturable absorption layer (4), wherein the saturable absorption layer adopts a strain compensation quantum well structure; the components of the alloy material are controlled to realize the accurate regulation and control of the optical parameters of the device.
Description
Technical Field
The invention relates to an infrared saturable absorber device based on a silicon-based IV alloy material, belonging to the technical field of lasers.
Background
Silicon-based semiconductors are the cornerstone of the modern microelectronics industry, and silicon complementary metal oxide semiconductor (complementary mental oxide semiconductor, CMOS) process technology has formed a powerful microelectronics industry. The existing mature silicon microelectronic technology and the silicon-based photoelectronic technology are combined, silicon-based photoelectric integration can be realized, the silicon-based photoelectric integration chip shows very strong competitiveness in the near infrared band, and the silicon-based photoelectric integration chip is widely valued and applied in the field of optical fiber communication. The infrared ultrashort pulse laser light source has extremely high application value in the fields of imaging, communication, molecular spectrum and the like, so that the efficient silicon-based infrared ultrashort pulse laser light source is one of the most critical challenges for realizing silicon-based photoelectric integration.
At present, the ultra-short pulse laser mainly comprises an active mode locking mode and a passive mode locking mode, wherein the passive mode locking mode does not need an external electric control device, and the generated pulse is shorter and is favored by people. The saturable absorption device is a core device for realizing ultra-short pulse laser in a passive mode locking mode. The saturable absorption device realizes intensity modulation based on the saturable absorption effect of the material, and the light absorptivity of the device is reduced along with the increase of the incident light power, so that the device has remarkable optical switching characteristics.
Semiconductor saturable absorption mirrors (SESAMs) are a type of saturable absorption device that combines a semiconductor material with a special structure that has reflective or transmissive properties. Currently, the preparation process and the optical parameter regulation scheme of SESAMs are mature, and have been widely studied and applied to passive mode-locked lasers. Commercial SESAMs are mostly semiconductor quantum well structures, and the material of the saturable absorption layer is usually a group III-V semiconductor such as gallium arsenide (GaAs) and indium phosphide (InP). The integration of III-V semiconductors with silicon (Si) requires the implementation of wafer bonding techniques or the growth of thicker buffer layers on the wafer surface. The wafer bonding technology has higher requirement on the surface evenness of the substrate and more complex process; the thicker buffer layer on the surface of the silicon wafer requires longer process treatment time and has higher cost. Furthermore, gaAs and InP based saturable absorber devices typically operate at infrared wavelengths of 1.5 μm or less. Therefore, finding a saturable absorber device that is easy to realize silicon-based optoelectronic integration is a key challenge for realizing a high-efficiency silicon-based infrared ultrashort pulse laser light source.
Germanium tin (GeSn) alloys are a group IV alloy material of great interest in recent years. GeSn is used as a group IV alloy material, and is easier to realize silicon-based photoelectric integration compared with a group III-V semiconductor material. Meanwhile, the GeSn alloy material can regulate and control the energy band structure. Unlike group IV semiconductor materials with indirect band gaps, which have been widely studied for Si, ge, etc., geSn alloys will be converted into direct band gap materials when the Sn content is greater than 8%. Theoretical studies have shown that as the composition of Sn increases, the direct bandgap of GeSn alloy materials can be reduced to zero. However, since the solid solubility of Sn in Ge is very low, it is difficult to prepare a GeSn alloy material with high Sn component and high quality, and it is difficult to realize adjustment of band gap in a large range simply by adjusting the size of Sn component. Therefore, the research on infrared saturable absorption devices based on GeSn alloy materials and with adjustable band gaps in a large range is a key scientific and technical problem for realizing high-efficiency silicon-based infrared ultrashort pulse laser sources.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide an infrared saturable absorber device having an operating wavelength that can be extended to 1.5 μm or more and having a broadband tunable characteristic. The silicon-based IV alloy material infrared saturable absorption device provided by the invention can generate stable and highly repeatable high-power pulse laser output in a broadband range. The invention also provides a technical scheme of the mode locking or Q-switched pulse laser based on the silicon-based IV-group alloy material infrared saturable absorption device.
The technical solution for realizing the purpose of the invention is as follows: an infrared saturable absorption device of a silicon-based IV alloy material is characterized in that a strain compensation quantum well structure based on the IV alloy material is used as a saturable absorption layer, the working wavelength is covered by 1.9-2.5 mu m, and the device parameters have adjustable characteristics; the device comprises a saturable absorber layer and the optical elements required to carry the saturable absorber layer.
The silicon-based IV alloy material infrared saturable absorption device has two modes of reflection type and transmission type; the reflective type saturable absorption device comprises a functional layer, an optical substrate, a buffer layer, a saturable absorption layer and a reflecting layer, wherein the saturable absorption layer adopts a strain compensation quantum well structure; the transmission type saturable absorber consists of a functional layer, an optical substrate, a buffer layer and a saturable absorption layer, wherein the saturable absorption layer adopts a strain compensation quantum well structure.
The optical substrate in the silicon-based IV alloy material infrared saturable absorption device is made of materials compatible with CMOS technology, such as silicon (Si), germanium (Ge) and the like.
The buffer layer in the silicon-based IV alloy material infrared saturable absorber is made of IV materials such as germanium (Ge) and germanium tin alloy (GeSn), and the thickness of the buffer layer is 0.01-100 microns.
The saturable absorption layer in the silicon-based IV alloy material infrared saturable absorption device is a strain compensation multi-period quantum well structure, each period comprises a barrier layer and a potential well layer, and the number of periods is 1-50; the barrier layer is a silicon germanium tin alloy material (Si x Ge 1-x-y Sn y ) Or silicon germanium material (Si x Ge 1-x ) Wherein x is a component of Si, 0<x<0.2, y is Sn, 0<y<0.3, the barrier layer thickness is in the range of 5-100 nanometers; the potential well layer is a germanium tin alloy material (Ge 1-x Sn x ) Wherein x is a component of Sn, 0<x<0.3, the thickness of the potential well layer is 5-100 nanometers; the thickness of the saturable absorber layer ranges from 0.1 to 5 microns.
The saturable absorption layer in the silicon-based IV alloy material infrared saturable absorption device regulates and controls the working wavelength of the saturable absorption device by controlling the Sn material component in the germanium-tin alloy material, wherein the Sn material component range is 0% -30%.
The saturable absorption layer in the silicon-based IV alloy material infrared saturable absorption device regulates and controls the working wavelength of the saturable absorption device by regulating and controlling the strain of the potential well layer material, changing the band gap of the potential well layer.
The saturable absorption layer in the silicon-based IV alloy material infrared saturable absorption device regulates and controls the band gap of the barrier layer by controlling the material composition of Si and Sn in the barrier layer material.
The preparation method of the silicon-based IV alloy material infrared saturable absorber is characterized in that a germanium or germanium tin alloy buffer layer (3) is grown on one side of an optical substrate (2) by using a molecular beam epitaxy technology; growing a multi-period potential well layer and a barrier layer on the surface of the buffer layer (3) by using a molecular beam epitaxy technology to form a saturable absorption layer (4); growing an optical antireflection film and a passivation layer on the other side of the optical substrate (2) by using methods such as magnetron sputtering; finally, a reflecting layer (5) is plated on the surface of the saturable absorbing layer (4) by using electron beam evaporation and other technologies.
One exemplary preparation process is:
step 1, a functional layer (1) is deposited on one side of a double-sided polished silicon substrate (2) by using a laser pulse deposition method, wherein the functional layer comprises an optical antireflection film and SiO 2 A passivation layer;
step 5, carrying out the process steps of the step 3 and the step 4 for 4 times to form a saturable absorption layer (4) containing a 4-period strain compensation quantum well structure;
and 6, evaporating a gold film (5) with the thickness of 1 mu m on the surface of the saturable absorption layer (4) by using an electron beam evaporation technology.
In the process of growing the Ge buffer layer (3) by using molecular beam epitaxy, the lattice mismatch dislocation is reduced by using an in-situ annealing method from 800 ℃ to 600 ℃.
The beneficial effects are that: compared with the prior art, the infrared saturable absorber of the silicon-based IV alloy material has the remarkable advantages that the saturable absorber can be integrated with a silicon-based photon chip, the process is simple, and the cost is low; the saturable absorption layer is composed of a GeSn/SiGeSn strain compensation quantum well structure, and the GeSn potential well layer regulates and controls the working wavelength of the saturable absorption device by controlling the Sn material component in the germanium-tin alloy material to change the band gap of the potential well layer; the tensile strain introduced by the SiGeSn barrier layer reduces the direct band gap of the material, so that the device can cover a wave band of 1.9-2.5 mu m; the above characteristics of the saturable absorption device are not possessed by the prior art, so that the device can realize stable, highly repeatable and adjustable pulse output of the working wavelength in the wave band of 1.9-2.5 mu m.
Drawings
FIG. 1 is a linear absorption spectrum of a silicon-based group IV alloy GeSn/SiGeSn quantum well material in the 1.9-2.5 μm band.
FIG. 2 is a photo-generated carrier relaxation curve of a silicon-based group IV alloy GeSn/SiGeSn quantum well material at a wavelength of 2.3 μm.
Fig. 3 is a schematic diagram of an infrared saturable absorber device of a reflective silicon-based group IV alloy material in example 1.
Fig. 4 is a schematic diagram of an infrared saturable absorber device made of a transmissive silicon-based group IV alloy material in example 2.
Fig. 5 is a schematic diagram of a semiconductor pulse laser based on an infrared saturable absorber device of a silicon-based group IV alloy material in example 3.
Fig. 6 is a schematic diagram of a fiber pulse laser based on an infrared saturable absorber device of a silicon-based group IV alloy material in example 4.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings.
The optical substrate in the silicon-based IV alloy material infrared saturable absorber device is required to be compatible with a silicon microelectronic process, silicon-based integration can be realized, and the preferable optical substrate is silicon (Si), germanium (Ge) or the like.
The buffer layer in the silicon-based IV alloy material infrared saturable absorber has low lattice mismatch degree with germanium-tin (GeSn) alloy material, and germanium (Ge), low Sn component germanium-tin alloy (GeSn) and the like are selected.
More excellent, the saturable absorption layer of the silicon-based IV alloy material infrared saturable absorption device is of a GeSn/SiGeSn strain compensation quantum well structure, tensile strain introduced by a SiGeSn barrier layer reduces the direct band gap of the material, the direct band gap material can be realized without extending a high Sn component GeSn alloy material, and meanwhile, the band gap size of the saturable absorption layer can be regulated and controlled by regulating Sn components and introducing strain, so that the infrared saturable absorption device with different working wavelengths is prepared.
Example 1: the embodiment provides a design scheme of a reflective silicon-based IV alloy material infrared saturable absorption device. Referring to fig. 3, the specific scheme is as follows: a 250nm Ge buffer layer (3) was grown on one side of the Si substrate using molecular beam epitaxy techniques. Next, a saturable absorption layer (4) composed of a 4-period GeSn/SiGeSn strain compensation quantum well structure is grown on the surface of the Ge buffer layer (3) by using molecular beam epitaxy, wherein 10nm of Ge 0.915 Sn 0.085 Thin film as potential well layer, si of 20nm 0.1 Ge 0.85 Sn 0.05 The film serves as a barrier layer, and the thickness of the saturable absorption layer (4) is 120nm. Next, a functional layer (1) composed of an optical antireflection film and a passivation layer was grown on the other side of the Si substrate (2) using a magnetron sputtering technique. Finally, a 100nm gold film (5) was evaporated on the surface of the saturable absorption layer (4) using electron beam evaporation.
Example 2: the embodiment provides a design scheme of a transmission type silicon-based IV alloy material infrared saturable absorption device. Referring to fig. 4, the specific scheme is as follows: a 250nm Ge buffer layer (3) was grown on one side of the Si substrate using molecular beam epitaxy techniques. Next, a saturable absorption layer (4) composed of a 4-period GeSn/SiGeSn strain compensation quantum well structure is grown on the surface of the Ge buffer layer (3) by using molecular beam epitaxy, wherein 10nm of Ge 0.915 Sn 0.085 Thin film as potential well layer, si of 20nm 0.1 Ge 0.85 Sn 0.05 The film serves as a barrier layer, and the thickness of the saturable absorption layer (4) is 120nm. Finally, a functional layer (1) consisting of an optical antireflection film and a passivation layer is grown on the other side of the Si substrate (2) by using a magnetron sputtering technology.
Example 3: the embodiment provides a design scheme of a semiconductor pulse laser based on a silicon-based IV alloy material infrared saturable absorption device. As shown in fig. 5, the semiconductor pulse laser based on the silicon-based group IV alloy material infrared saturable absorption device consists of a pumping source (6), a semiconductor gain medium (7), a coupling-out mirror (8) and a reflective silicon-based group IV alloy material infrared saturable absorption device (9). The continuous light is subjected to mode locking or Q adjustment after passing through a resonant cavity formed by a coupling output mirror (8) and a reflective silicon-based IV alloy material infrared saturable absorption device (9), and the pulse light is output through the coupling output mirror (8).
Example 4: the embodiment provides a design scheme of an optical fiber pulse laser based on a silicon-based IV alloy material infrared saturable absorption device. As shown in fig. 6, the fiber pulse laser based on the silicon-based group IV alloy material infrared saturable absorption device consists of a pumping source (6), a transmission-type silicon-based group IV alloy material infrared saturable absorption device (10), a wavelength division multiplexer (11), a gain fiber (12), a fiber coupler (13) and a unidirectional isolator (14). The function of the unidirectional isolator (14) is to protect the pump source or stabilize the pulse signal. The continuous light is subjected to mode locking or Q adjustment after passing through a resonant cavity formed by a transmission type silicon-based IV alloy material infrared saturable absorption device (10) and an optical fiber coupler (13), and the pulse light is output through the optical fiber coupler (13).
Claims (9)
1. An infrared saturable absorber device based on a silicon-based group IV alloy material, characterized in that: using a strain compensation quantum well structure based on a group IV alloy material as a saturable absorption layer, wherein the working wavelength is covered by 1.9-2.5 mu m; the device parameters have tunable characteristics.
2. The infrared saturable absorber device of a silicon-based group IV alloy material of claim 1, wherein: the silicon-based IV alloy material infrared saturable absorption device has two modes of reflection type and transmission type; the reflective type saturable absorption device comprises a functional layer, an optical substrate, a buffer layer, a saturable absorption layer and a reflecting layer, wherein the saturable absorption layer adopts a strain compensation quantum well structure; the transmission type saturable absorber consists of a functional layer, an optical substrate, a buffer layer and a saturable absorption layer, wherein the saturable absorption layer adopts a strain compensation quantum well structure;
the saturable absorption layer is of a strain compensation multi-period quantum well structure, each period comprises a barrier layer and a potential well layer, and the number of periods is 1-50;the barrier layer is a silicon germanium tin alloy material (Si x Ge 1-x-y Sn y ) Or silicon germanium material (Si x Ge 1-x ) Wherein x is a component of Si, 0<x<0.2, y is Sn, 0<y<0.3, the barrier layer thickness is in the range of 5-100 nanometers; the potential well layer is a germanium tin alloy material (Ge 1-x Sn x ) Wherein x is a component of Sn, 0<x<0.3, the thickness of the potential well layer is 5-100 nanometers; the thickness of the saturable absorber layer ranges from 0.1 to 5 microns.
3. The infrared saturable absorber device of a silicon-based group IV alloy material of claim 2, wherein: the optical substrate is made of silicon (Si) and germanium (Ge), and is compatible with a CMOS process.
4. The infrared saturable absorber device of a silicon-based group IV alloy material of claim 2, wherein: the buffer layer is made of germanium (Ge) and germanium tin alloy (GeSn) IV group materials, and the thickness range of the buffer layer is 0.01-100 microns.
5. The infrared saturable absorber device of a silicon-based group IV alloy material of claim 2, wherein: the saturable absorption layer regulates and controls the working wavelength of the saturable absorption device by controlling the Sn material component in the germanium-tin alloy material, wherein the Sn material component range is 0% -30%.
6. The infrared saturable absorber device of a silicon-based group IV alloy material of claim 2, wherein: the saturable absorption layer regulates and controls the working wavelength of the saturable absorption device by regulating and controlling the strain of the potential well layer material and changing the band gap of the potential well layer.
7. The infrared saturable absorber device of a silicon-based group IV alloy material of claim 2, wherein: the saturable absorption layer regulates and controls the band gap of the barrier layer by controlling the material composition of Si and Sn in the barrier layer material.
8. The preparation method of the silicon-based IV alloy material infrared saturable absorber device is characterized by comprising the following steps of: growing a germanium or germanium tin alloy buffer layer (3) on one side of the optical substrate (2) by using a molecular beam epitaxy technique; growing a multi-period potential well layer and a barrier layer on the surface of the buffer layer (3) by using a molecular beam epitaxy technology to form a saturable absorption layer (4); growing an optical antireflection film and a passivation layer on the other side of the optical substrate (2) by using methods such as magnetron sputtering; finally, a reflecting layer (5) is plated on the surface of the saturable absorbing layer (4) by using electron beam evaporation and other technologies.
9. The method for manufacturing the infrared saturable absorber device made of the silicon-based group IV alloy material according to claim 8, wherein the method comprises the following steps: in the process of using molecular beam epitaxy to grow the buffer layer, the method of in-situ annealing from 800 ℃ to 600 ℃ is used to reduce lattice mismatch dislocation.
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