CN114069387B - Novel nitride vertical structure laser and preparation method thereof - Google Patents
Novel nitride vertical structure laser and preparation method thereof Download PDFInfo
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- CN114069387B CN114069387B CN202010787389.4A CN202010787389A CN114069387B CN 114069387 B CN114069387 B CN 114069387B CN 202010787389 A CN202010787389 A CN 202010787389A CN 114069387 B CN114069387 B CN 114069387B
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 82
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
A novel nitride vertical structure laser, characterized in that: the semiconductor device comprises a substrate, a lower DBR structure, a transverse P-N junction active layer, a current limiting layer and an upper DBR structure which are sequentially arranged from bottom to top, wherein the upper surface of the transverse P-N junction active layer is provided with a P-type metal electrode and an N-type metal electrode respectively at the edges of the left side and the right side. The novel nitride vertical structure laser can well realize balance between light field limitation and current injection, reduce current congestion effect, thereby improving laser power and reducing lasing threshold. In addition, a preparation method of the novel nitride vertical structure laser is also provided.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a novel nitride vertical structure laser and a preparation method thereof.
Background
The III nitride semiconductor ultraviolet laser has the advantages of large photon energy, high focusing precision, high modulation and demodulation speed, long service life, small volume, easy integration, high process compatibility and the like, and can theoretically realize higher conversion efficiency and higher output power, thereby having important application prospect in the national economy and military field. In contrast to edge-emitting lasers (EEL) lasers, vertical structure lasers, including vertical cavity surface lasers (VCSELs) and polarized elementary lasers (polar lasers), rely on the reflection of light by a Distributed Bragg Reflector (DBR) so that the laser light exits perpendicular to the epitaxial structure. The vertical structure laser has the advantages of circular output light spots, single longitudinal mode output, low threshold current, easiness in two-dimensional area array integration and the like, is widely applied to the fields of optical interconnection, optical fiber communication, optical storage, optical calculation, local area networks, atomic clocks and the like, is compatible with LEDs in preparation technology, and is low in large-scale preparation cost.
The conventional nitride vertical structure laser, as shown in fig. 1, comprises a substrate 10a, a lower DBR structure 9a, an N-type contact layer 7a, an active layer 6a, a P-type contact layer 5a, a current limiting layer 4a, an ITO transparent conductive film 3a, and an upper DBR structure 1a, wherein the upper surface of the N-type contact layer 7a is located at the left and right sides and is provided with N-type metal electrodes 8a, and the upper surface of the ITO transparent conductive film 3a is located at the left and right sides and is provided with P-type metal electrodes 2a.
However, the existing nitride vertical structure laser still has the following technical problems: the common characteristics of the vertical cavity surface laser or the polarized elementary laser are that the upper and lower DBR structures are adopted to limit light, so that resonance is generated in a longitudinal area; on the other hand, the doping of the nitride vertical structure laser epitaxial layer is usually realized by metal organic vapor phase epitaxy (MOCVD) or Molecular Beam Epitaxy (MBE), so that the P-N junction active layers are all of a longitudinal structure, and the current injection direction is also longitudinal, so that the current injection direction has a conflict with the optical field limitation; considering the non-conductivity of the nitride DBR structure or the dielectric DBR structure itself, N or P type metal electrodes are typically deposited outside the resonant cavity, directly resulting in a reduction in current injection efficiency and current crowding phenomenon, and thus cannot provide a sufficiently high current density to achieve lasing.
Disclosure of Invention
The invention aims to solve the technical problems that: the novel nitride vertical structure laser can well realize balance between light field limitation and current injection, reduce current congestion effect, thereby improving laser power and reducing lasing threshold.
The technical scheme of the invention is as follows: a novel nitride vertical structure laser, characterized in that: the semiconductor device comprises a substrate, a lower DBR structure, a transverse P-N junction active layer, a current limiting layer and an upper DBR structure which are sequentially arranged from bottom to top, wherein the upper surface of the transverse P-N junction active layer is provided with a P-type metal electrode and an N-type metal electrode respectively at the edges of the left side and the right side.
After the structure is adopted, the invention has the following advantages:
the novel nitride vertical structure laser discards a conventional longitudinal P-N junction in a gain area, adopts a transverse P-N junction as an active layer of a device, and current is transversely expanded and injected by the transverse P-N junction and is vertical to an optical limiting direction, so that the current injection is not blocked by a non-conductive DBR structure, the current is uniformly injected into a middle window area, photons are limited by an upper DBR structure and a lower DBR structure in the longitudinal direction, thus the phenomenon of current congestion is not generated, larger optical gain can be obtained, and the balance between the light field limitation and the current injection can be well realized; in addition, as the phenomenon of current congestion is not generated, the breakdown or collapse effect at the edge part of the current injection window can be avoided, higher current density can be realized, and larger optical gain can be obtained, so that the power of a laser is improved, and the lasing threshold is reduced; in addition, the current is completely injected from the transverse N-type region and the P-type region, and the metal electrode can be directly contacted with the nitride active layer, so that the current expansion layers such as ITO, AZO and the like are avoided in the traditional vertical structure laser, and the preparation difficulty and the process complexity of the device are reduced.
The invention aims to solve the other technical problems that: the preparation method of the novel nitride vertical structure laser can well realize balance between light field limitation and current injection, reduce current congestion effect, thereby improving laser power and reducing lasing threshold.
Aiming at the second technical problem, the first technical solution of the invention is as follows: a preparation method of a novel nitride vertical structure laser is characterized in that: it comprises the following steps:
(1) Alternately epitaxially growing a nitride lower DBR structure on the substrate, the nitride lower DBR structure having a single polarity or having both a metal polarity region and a nitrogen polarity region;
(2) The method comprises the steps of carrying out high-temperature epitaxy on a nitride active layer on a nitride lower DBR structure, and simultaneously adopting an ion beam implantation or nitride polarity regulation method to carry out selective area doping on the nitride active layer so as to obtain a transverse P-N junction active layer, wherein when the nitride lower DBR structure is of a single polarity, adopting the ion beam implantation method, and when the nitride lower DBR structure is simultaneously provided with a metal polarity region and a nitrogen polarity region, adopting the nitride polarity regulation method;
(3) Depositing a current limiting layer on the transverse P-N junction active layer, and forming a window through photoetching;
(4) Depositing a dielectric upper DBR structure on the current confinement layer;
(5) And etching through the left and right side edges of the DBR structure and the current limiting layer on the medium by photoetching and etching to expose the left and right side edges of the transverse P-N junction active layer, and respectively depositing a P-type metal electrode and an N-type metal electrode at the left and right side edges of the transverse P-N junction active layer.
After the method is adopted, the invention has the following advantages:
according to the preparation method of the novel nitride vertical structure laser, the conventional longitudinal P-N junction is abandoned in the gain region, the transverse P-N junction is adopted as the active layer of the device, and current is transversely expanded and injected by virtue of the transverse P-N junction and is vertical to the optical limiting direction, so that the current injection is not blocked by a non-conductive DBR structure, the current is uniformly injected into a middle window region, photons are limited by an upper DBR structure and a lower DBR structure in the longitudinal direction, the phenomenon of current congestion is not generated, larger optical gain can be obtained, and the balance between the light field limitation and the current injection can be well realized; in addition, as the phenomenon of current congestion is not generated, the breakdown or collapse effect at the edge part of the current injection window can be avoided, higher current density can be realized, and larger optical gain can be obtained, so that the power of a laser is improved, and the lasing threshold is reduced; in addition, the method adopts a forward mounting mode, and the upper DBR structure and the lower DBR structure are respectively oxide and nitride, so that the method has the advantage of simple preparation process.
Preferably, the substrate is one of silicon, sapphire, silicon carbide, single crystal GaN or AlN; the nitride lower DBR structure is formed by alternately arranging any one group of materials of GaN/AlGaN, gaN/AlN, alGaN/AlN and GaN/AlInN, wherein the thickness range of each layer is 10nm-5 mu m; the lateral P-N junction active layer is a GaN, alGaN, inGaN film or a multilayer quantum well, the thickness range is 20 nm-1 mu m, and the growth mode is metal organic vapor phase epitaxy or molecular beam epitaxy; the current limiting layer is AlN, al 2 O 3 ,SiO 2 ，SiN x One of them has a thickness of 10nm-500nm and is prepared by magnetron sputtering,One of electron beam evaporation, thermal evaporation, molecular beam epitaxy, laser pulse deposition and atomic layer deposition; the DBR structure on the medium is SiO 2 ,Al 2 O 3 ,TiO 2 ,HfO 2 ,ZrO 2 ,ZnO,Ta 2 O 5 The two dielectric materials are alternately arranged, the thickness of each layer is in the range of 10nm-5 mu m, and the preparation method is one of magnetron sputtering, electron beam evaporation, thermal evaporation, molecular beam epitaxy, laser pulse deposition and atomic layer deposition; the N-type metal electrode is one of Ti/Al/Ti/Au, ti/Al/Ni/Au, cr/Al/Ni/Au and V/Al/Ni/Au, the thickness is 50nm-1 mu m, the P-type metal electrode is one of Ni/Au, ni/Pt, pt and Au, the thickness is 50nm-1 mu m, and the preparation methods of the N-type metal electrode and the P-type metal electrode are one of electron beam evaporation, thermal evaporation and magnetron sputtering. The arrangement can obtain a novel nitride vertical structure laser product with excellent performance.
Preferably, in the step (1), a layer of nitride low-temperature buffer layer is epitaxially grown on the substrate, and then the nitride low-temperature buffer layer is put into MBE equipment or MOCVD equipment to epitaxially grow a nitride lower DBR structure at a high temperature, wherein the high temperature epitaxy temperature is 800-1400 ℃; and (2) carrying out selective doping on the nitride active layer based on ion beam implantation while carrying out high-temperature epitaxy on the nitride lower DBR structure, wherein the region after one or more of Si, ge and O is an N-type region, the region after one or more of Mg and P are implanted into the nitride active layer is a P-type region, so that a transverse P-N junction active layer is formed, and then carrying out high-temperature annealing at 600-1200 ℃ for 10 minutes-2 hours. The ion beam implantation method is adopted, the preparation process is simpler, and the high-temperature annealing is carried out after the ion beam implantation is finished, so that the damage of the ion implantation to the nitride epitaxial thin film lattice can be eliminated, and the product performance is better.
Preferably, in the step (1), a nitride low-temperature buffer layer is epitaxially grown on the substrate, then the nitride low-temperature buffer layer is put into MBE equipment or MOCVD equipment, a nitride high-temperature epitaxial film is epitaxially grown at high temperature, and then the nitride high-temperature epitaxial film is formed outside the nitride high-temperature buffer layerDepositing an alumina layer on the epitaxial film, patterning the alumina layer by photoetching and etching, and putting the patterned alumina layer into MOCVD equipment or MBE equipment to re-epitaxially grow a nitride lower DBR structure at a high temperature of 800-1400 ℃, wherein the nitride lower DBR structure grown on the original nitride high temperature epitaxial film is of metal polarity, and the nitride lower DBR structure grown on the alumina layer is of nitrogen polarity; in the step (2), the nitride active layer which is epitaxially grown at a high temperature on the metal polarity region of the nitride lower DBR structure is also metal polarity, the nitride active layer which is epitaxially grown at a high temperature on the nitrogen polarity region of the nitride lower DBR structure is also nitrogen polarity, and the nitride active layer is epitaxially grown at a high temperature on the nitride lower DBR structure, and simultaneously, the nitride active layer is doped with Mg by adopting a method of regulating and controlling the nitride polarity, wherein the doping concentration range is 1×10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped into P type, and the nitrogen polarity of the nitride active layer still keeps N type, so that the lateral P-N junction active layer is obtained. The nitride polarity regulation method has the advantages that after the growth of the active layer film is finished, PN characteristics of the active layer film are determined without subsequent treatment; the lateral P-N junction structure obtained by utilizing the epitaxial growth of the patterned buffer layer has the advantages that the nitrogen polarity domain and the metal polarity domain exist in one substrate at the same time, and the stress is relaxed, so that the reduction of radiation recombination efficiency caused by the cracking phenomenon of a film in a high stress state and the higher quantum threshold Stark effect is avoided, the crystal quality can be well controlled, and the crystal quality can be well controlled.
Preferably, in the step (1), a layer of nitride low-temperature buffer layer is epitaxially grown on the substrate, patterning is performed on the nitride low-temperature buffer layer through photoetching and etching, the patterned nitride low-temperature buffer layer is placed in MOCVD equipment or MBE equipment, a nitride lower DBR structure is epitaxially grown at a high temperature, the nitride lower DBR structure grown on an unetched area of the original nitride low-temperature buffer layer is of metal polarity, the nitride lower DBR structure grown on the etched area of the original nitride low-temperature buffer layer is of nitrogen polarity, and the high-temperature epitaxy temperature range is 800-1400 ℃; the nitride active layer epitaxially grown at high temperature on the metal polar region of the nitride lower DBR structure in the step (2) is alsoThe nitride active layer which is high-temperature epitaxial on the nitrogen polar region of the nitride lower DBR structure is also nitrogen polar, and the nitride active layer is doped with Mg by adopting a method of regulating and controlling the nitride polarity while the nitride active layer is high-temperature epitaxial on the nitride lower DBR structure, wherein the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped into P type, and the nitrogen polarity of the nitride active layer still keeps N type, so that the lateral P-N junction active layer is obtained. The nitride polarity regulation method has the advantages that after the growth of the active layer film is finished, PN characteristics of the active layer film are determined without subsequent treatment; the lateral P-N junction structure obtained by utilizing the epitaxial growth of the patterned buffer layer has the advantages that the nitrogen polarity domain and the metal polarity domain exist in one substrate at the same time, and the stress is relaxed, so that the reduction of radiation recombination efficiency caused by the cracking phenomenon of a film in a high stress state and the higher quantum threshold Stark effect is avoided, the crystal quality can be well controlled, and the crystal quality can be well controlled.
Aiming at the second technical problem, the second technical proposal of the invention is as follows: a preparation method of a novel nitride vertical structure laser is characterized in that: it comprises the following steps:
(1) Preparing a transverse P-N junction active layer on an original substrate by adopting an ion beam implantation or nitride polarity regulation method;
(2) Depositing a dielectric lower DBR structure on the lateral P-N junction active layer;
(3) Bonding a new substrate on the DBR structure under the medium, and removing the original substrate under the lateral P-N junction active layer;
(4) Depositing a current limiting layer below the transverse P-N junction active layer, and forming a window through photoetching and etching;
(5) Depositing a dielectric upper DBR structure under the current confinement layer;
(6) And etching through the left and right side edges of the DBR structure and the current limiting layer on the medium by photoetching and etching to expose the left and right side edges of the transverse P-N junction active layer, and respectively depositing a P-type metal electrode and an N-type metal electrode at the left and right side edges of the transverse P-N junction active layer.
The second technical solution is to prepare the product in a flip-chip manner, the upper and lower DBR structures are both oxide, and the oxide DBR structure has the advantages of higher reflectivity, small optical loss, no influence on the crystal quality of the active layer and the like.
Preferably, the original substrate and the new substrate are both one of silicon, sapphire, silicon carbide, single crystal GaN or AlN; the lateral P-N junction active layer is a GaN, alGaN, inGaN film or a multilayer quantum well, the thickness range is 20 nm-1 mu m, and the growth mode is metal organic vapor phase epitaxy or molecular beam epitaxy; the current limiting layer is AlN, al 2 O 3 ,SiO 2 ，SiN x The thickness range is 10nm-500nm, and the preparation method is one of magnetron sputtering, electron beam evaporation, thermal evaporation, molecular beam epitaxy, laser pulse deposition and atomic layer deposition; the dielectric lower DBR structure and the dielectric upper DBR structure are both SiO 2 ,Al 2 O 3 ,TiO 2 ,HfO 2 ,ZrO 2 ,ZnO,Ta 2 O 5 The two dielectric materials are alternately arranged, the thickness of each layer is in the range of 10nm-5 mu m, and the preparation method is one of magnetron sputtering, electron beam evaporation, thermal evaporation, molecular beam epitaxy, laser pulse deposition and atomic layer deposition; the N-type metal electrode is one of Ti/Al/Ti/Au, ti/Al/Ni/Au, cr/Al/Ni/Au and V/Al/Ni/Au, the thickness is 50nm-1 mu m, the P-type metal electrode is one of Ni/Au, ni/Pt, pt and Au, the thickness is 50nm-1 mu m, and the preparation methods of the N-type metal electrode and the P-type metal electrode are one of electron beam evaporation, thermal evaporation and magnetron sputtering. The arrangement can obtain a novel nitride vertical structure laser product with excellent performance.
Preferably, in the step (1), a layer of nitride low-temperature buffer layer is epitaxially grown on the original substrate, then the nitride low-temperature buffer layer is put into MBE equipment or MOCVD equipment to epitaxially grow a nitride active layer at a high temperature of 800-1400 ℃, the nitride active layer is epitaxially grown at a high temperature, meanwhile, the nitride active layer is doped in a selected area based on ion beam implantation, the area after one or more of Si, ge and O is implanted into the nitride active layer is an N-type area, the area after one or more of Mg and P is implanted into the nitride active layer is a P-type area, so that a transverse P-N junction active layer is obtained, and then high-temperature annealing is performed, wherein the annealing temperature is 600-1200 ℃, and the annealing time is 10 minutes-2 hours. The ion beam implantation method is adopted, the preparation process is simpler, and the high-temperature annealing is carried out after the ion beam implantation is finished, so that the damage of the ion implantation to the nitride epitaxial thin film lattice can be eliminated, and the product performance is better.
Preferably, in the step (1), a layer of nitride low-temperature buffer layer is epitaxially grown on the original substrate, then the nitride low-temperature buffer layer is put into MBE equipment or MOCVD equipment, a layer of nitride high-temperature epitaxial film is epitaxially grown at high temperature, then an aluminum oxide layer is deposited on the nitride high-temperature epitaxial film, patterning is carried out on the aluminum oxide layer through photoetching and etching, the aluminum oxide layer is put into MOCVD equipment or MBE equipment, the nitride active layer is epitaxially grown again at high temperature ranging from 800 ℃ to 1400 ℃, the nitride active layer grown on the original nitride high-temperature epitaxial film is of metal polarity, the nitride active layer grown on the aluminum oxide layer is of nitrogen polarity, while the nitride active layer is epitaxially grown at high temperature, the method of regulating and controlling the nitride polarity is also adopted, mg doping is carried out on the nitride active layer, and the doping concentration range is 1×10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped into P type, and the nitrogen polarity of the nitride active layer still keeps N type, so that the lateral P-N junction active layer is obtained. The nitride polarity regulation method has the advantages that after the growth of the active layer film is finished, PN characteristics of the active layer film are determined without subsequent treatment; the lateral P-N junction structure obtained by utilizing the epitaxial growth of the patterned buffer layer has the advantages that the nitrogen polarity domain and the metal polarity domain exist in one substrate at the same time, and the stress is relaxed, so that the reduction of radiation recombination efficiency caused by the cracking phenomenon of a film in a high stress state and the higher quantum threshold Stark effect is avoided, the crystal quality can be well controlled, and the crystal quality can be well controlled.
Preferably, in the step (1), a layer of nitrogen is epitaxially grown on the original substratePatterning the nitride low-temperature buffer layer by photoetching and etching, placing the patterned nitride low-temperature buffer layer into MOCVD equipment or MBE equipment to epitaxially grow a nitride active layer at high temperature, wherein the nitride active layer grown on the unetched area of the original nitride low-temperature buffer layer is of metal polarity, the nitride active layer grown on the etched area of the original nitride low-temperature buffer layer is of nitrogen polarity, and simultaneously, performing Mg doping on the nitride active layer by adopting a method of regulating and controlling the nitride polarity while epitaxially growing the nitride active layer at high temperature, wherein the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped into P type, and the nitrogen polarity of the nitride active layer still keeps N type, so that the lateral P-N junction active layer is obtained. The nitride polarity regulation method has the advantages that after the growth of the active layer film is finished, PN characteristics of the active layer film are determined without subsequent treatment; the lateral P-N junction structure obtained by utilizing the epitaxial growth of the patterned buffer layer has the advantages that the nitrogen polarity domain and the metal polarity domain exist in one substrate at the same time, and the stress is relaxed, so that the reduction of radiation recombination efficiency caused by the cracking phenomenon of a film in a high stress state and the higher quantum threshold Stark effect is avoided, the crystal quality can be well controlled, and the crystal quality can be well controlled.
Description of the drawings:
FIG. 1 is a schematic diagram of a conventional nitride vertical structure laser;
fig. 2 is a schematic diagram of a nitride vertical structure laser according to embodiment 1 of the present invention;
FIG. 3 is a step diagram of a method for fabricating a nitride vertical structure laser according to example 2 of the present invention;
FIG. 4 is a step diagram of a method for fabricating a nitride vertical structure laser according to example 3 of the present invention;
FIG. 5 is a step diagram of a method for fabricating a nitride vertical structure laser according to example 4 of the present invention;
FIG. 6 is a step diagram of a method for fabricating a nitride vertical structure laser according to example 5 of the present invention;
in the prior art diagram: 1 a-upper Bragg reflector, 2a-P type metal electrode, transparent conductive film such as 3a-ITO, 4 a-current limiting layer, 5a-P type contact layer, 6 a-active layer, 7a-N type contact layer, 8a-N type metal electrode, 9 a-lower Bragg reflector, 10 a-substrate;
in the drawings of the invention: the semiconductor device comprises a 1-original substrate, a 2-nitride low-temperature buffer layer, a 3-lateral P-N junction active layer, a 4-lower Bragg reflector, a 5-current limiting layer, a 6-upper Bragg reflector, a 7-P type metal electrode, an 8-bonded new substrate, a 9-nitride high-temperature epitaxial film, a 10-alumina layer and an 11-N type metal electrode.
Detailed Description
The invention will be further described with reference to the accompanying drawings, in conjunction with examples.
Example 1:
as shown in fig. 2, the novel nitride vertical structure laser comprises a substrate 1, a lower DBR structure 4, a transverse P-N junction active layer 3, a current limiting layer 5 and an upper DBR structure 6 which are sequentially arranged from bottom to top, wherein P-type metal electrodes 7 and N-type metal electrodes 11 are respectively arranged on the upper surface of the transverse P-N junction active layer 3 and at the edges of the left side and the right side.
The novel nitride vertical structure laser discards a conventional longitudinal P-N junction in a gain area, adopts a transverse P-N junction as an active layer 3 of a device, and current is transversely expanded and injected by the transverse P-N junction and is vertical to an optical limiting direction, so that the current injection is not blocked by a non-conductive DBR structure, the current is uniformly injected into a middle window area, photons are limited by an upper DBR structure and a lower DBR structure in the longitudinal direction, thus the phenomenon of current congestion is not generated, larger optical gain can be obtained, and the balance between the light field limitation and the current injection can be well realized; in addition, as the phenomenon of current congestion is not generated, the breakdown or collapse effect at the edge part of the current injection window can be avoided, higher current density can be realized, and larger optical gain can be obtained, so that the power of a laser is improved, and the lasing threshold is reduced; in addition, the current is completely injected from the transverse N-type region and the P-type region, and the metal electrode can be directly contacted with the P-N junction active layer 3, so that the current expansion layers such as ITO, AZO and the like are avoided in the traditional vertical structure laser, and the preparation difficulty and the process complexity of the device are reduced.
Example 2:
as shown in fig. 3, a method for preparing a novel nitride vertical structure laser device of example 1, which adopts a positive mounting manner, comprises the following steps:
(1) Epitaxially growing an AlN low-temperature buffer layer 2 on a sapphire substrate 1, wherein the preparation method of the low-temperature buffer layer 2 is MOCVD or magnetron sputtering technology, putting the nitride low-temperature buffer layer 2 into MBE equipment or MOCVD equipment, epitaxially growing an AlN high-temperature epitaxial film 9 with the temperature increased to 300nm at 1100 ℃, depositing an alumina layer 10 with good 150nm compactness on the surface of the AlN high-temperature epitaxial film 9 by using atomic layer deposition, annealing at 1100 ℃ at high temperature, patterning the alumina layer 10 based on photoetching and plasma etching, putting into the MOCVD equipment or the MBE equipment, and re-epitaxially growing a nitride lower DBR structure 4 in the MOCVD equipment or the MBE equipment, wherein the nitride lower DBR structure 4 adopts AlN/Al 0.3 Ga 0.7 N groups of materials are alternately arranged, alN and Al 0.3 Ga 0.7 The thickness of N is 44nm and 37nm respectively, 10 pairs are added, the high-temperature epitaxy temperature is 800-1400 ℃, the nitride lower DBR structure grown on the original high-temperature epitaxy film 9 is of metal polarity, and the nitride lower DBR structure grown on the alumina layer 10 is of nitrogen polarity; alumina is a chemical component of a sapphire substrate, and by patterning the alumina and performing high-temperature annealing and re-epitaxial growth, a high-quality transverse polar structure can be obtained, namely: the metal polarity is obtained by epitaxy in the area (namely AlN) from which the alumina is removed, and the nitrogen polarity is obtained by epitaxy in the area from which the alumina is not removed;
(2) The nitride active layer is epitaxially grown at high temperature on the nitride lower DBR structure 4, the nitride active layer which is epitaxially grown at high temperature on the metal polarity region of the nitride lower DBR structure 4 is also metal polarity, the nitride active layer which is epitaxially grown at high temperature on the nitrogen polarity region of the nitride lower DBR structure 4 is also nitrogen polarity, and the nitride active layer is epitaxially grown at high temperature on the nitride lower DBR structure 4, and simultaneously, the nitride active layer is doped with Mg by adopting a method of regulating and controlling the nitride polarity, wherein the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped into P type, the nitrogen polarity of the nitride active layer still keeps N type, and the thickness of the lateral P-N junction active layer 3 is 1 mu m;
(3) A layer of 20nm AlN is epitaxially grown on the lateral P-N junction active layer 3 at high temperature to serve as a current limiting layer 5, a window is formed through photoetching and etching, and the epitaxy temperature is 900 ℃ and the air pressure is 20torr;
(4) Alternate deposition of 10 pairs of Al with a thickness of 56nm and 35nm respectively on the current confinement layer 5 using atomic layer deposition alternate growth 2 O 3 And TiO 2 Forming an upper dielectric DBR structure 6;
(5) Etching through Al by combining lithography and dry etching 2 O 3 /TiO 2 The left and right side edges of the dielectric upper DBR structure 6 and the current confinement layer 5 are exposed to expose the left and right side edges of the lateral P-N junction active layer 3, and P-type metal electrodes 7 and N-type metal electrodes 11 are respectively deposited at the left and right side edges of the lateral P-N junction active layer 3, and the N-type metal electrodes V/Al/Ni/Au are evaporated by adopting an electron beam, wherein the thickness is 10nm/50nm/10nm/200nm, and the thickness of the P-type metal electrodes Ni/Pt is 50nm/50nm.
Example 3:
as shown in fig. 4, a method for preparing a novel nitride vertical structure laser device of example 1, which adopts a flip-chip method, comprises the following steps:
(1) Depositing a 20nm AlN low-temperature buffer layer 2 on an original substrate 8 based on a magnetron sputtering technology, wherein the original substrate 8 is a silicon substrate, placing the AlN low-temperature buffer layer 2 into MBE equipment, epitaxially growing a nitride active layer at a high temperature of 900 ℃, wherein the nitride active layer is a GaN film with a thickness of 200nm, injecting Si ions and Mg ions respectively based on ion beam injection, wherein the area of the nitride active layer after the Si ions are injected is N-type, the area after the Mg ions are injected is P-type, and then carrying out high-temperature annealing for 30 minutes at 800 ℃ to realize the preparation of a transverse P-N junction active layer 3;
(2) 13 pairs of SiO with thickness of 62nm and 46nm are alternately deposited on the upper surface of the transverse P-N junction active layer 3 by utilizing electron beam evaporation 2 And HfO 2 Under the formation mediumThe reflectivity of the DBR structure 4 under the medium reaches more than 99% at the design wavelength, and the specific process conditions are as follows: the room temperature is-600 ℃, the deposition rate is 1nm/min-1000nm/min, and the target material of the electron beam evaporation is SiO 2 And HfO 2 Particles of (2);
(3) After a new substrate 1 is bonded on the surface of the dielectric lower DBR structure 4 by adopting a bonding technology, removing an original substrate 8 by polishing, etching or laser stripping, removing residues after stripping by wet etching or plasma cleaning, removing the original substrate 8 under the P-N junction active layer 3 by adopting a mechanical polishing technology in the embodiment, and removing residual silicon materials by adopting a potassium hydroxide aqueous solution;
(4) Depositing a 50nm AlN current limiting layer 5 under the P-N junction active layer 3 exposed after stripping by using MOCVD equipment, and forming a window by photoetching and etching;
(5) Second deposition of SiO 2 /HfO 2 To prepare the DBR structure 6, siO on the medium 2 /HfO 2 The thickness setting of (a) may be the same as that of the preparation medium lower DBR structure 4;
(6) Etching through the left and right side edges of the DBR structure 6 and the current limiting layer 5 on the medium by adopting a combination of photoetching and dry etching to expose the left and right side edges of the transverse P-N junction active layer 3, respectively depositing a P-type metal electrode 7 and an N-type metal electrode 11 at the left and right side edges of the transverse P-N junction active layer 3, and adopting an electron beam to evaporate N-type metal electrode Ti/Al/Ti/Au, wherein the thickness is 10nm/100nm/30nm/50nm, and the thickness of the P-type metal electrode 11Ni/Au is 10nm/100nm.
Example 4:
as shown in fig. 5, a method for preparing a novel nitride vertical structure laser device of example 1, which adopts a flip-chip method, comprises the following steps:
(1) Depositing a 50nm AlN low-temperature buffer layer 2 on an original substrate 8 at a low temperature, wherein the original substrate 8 is a sapphire substrate, performing patterning treatment on the AlN low-temperature buffer layer 2 through photoetching and KOH etching, and placing the patterned AlN low-temperature buffer layer 2 into MOCVD equipment to epitaxially grow a nitride active layer at a high temperature, wherein the nitride active layer is In 0.1 Ga 0.9 N film with thickness of 500nm and high-temperature epitaxy temperature of 800-1400 ℃, nitride active layer growing on unetched area of AlN low-temperature buffer layer 2 is metal polarity, nitride active layer growing on etched area of AlN low-temperature buffer layer 2 is nitrogen polarity, mg doping is carried out while high-temperature epitaxy of nitride active layer, doping concentration range is 1×10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped into P type, and the nitrogen polarity of the nitride active layer still keeps N type, so that the preparation of the P-N junction active layer 3 is realized; in the embodiment, the low-temperature AlN buffer layer 2 is deposited on the sapphire substrate, then patterning treatment is carried out, and epitaxial growth is carried out again, so that nitrogen polarity is obtained by epitaxy in the removed area of the low-temperature AlN buffer layer 2 (namely, directly on the sapphire), and metal polarity is obtained by epitaxy in the area of the low-temperature AlN buffer layer 2 which is not removed, and the patterning can be directly manufactured on the sapphire substrate, so that the manufacturing process is simpler;
(2) On the upper surface of the P-N junction active layer 3, 15 pairs of Al with thicknesses of 52nm and 33nm respectively are grown based on laser pulse deposition 2 O 3/ TiO 2 A dielectric lower DBR structure 4 of (a);
(3) After a new substrate 1 is bonded on the dielectric lower DBR structure 4 by adopting a bonding technology, an original substrate 8 is stripped by laser, a KrF excimer laser is adopted as a light source for 248nm, the repetition frequency is 1Hz, the pulse width is 25ns, and the stripped residue is removed by wet etching, wherein the new substrate 1 is a silicon substrate;
(4) Deposition of 100nm SiN on the lower surface of the P-N junction active layer 3 based on magnetron sputtering technique x A current limiting layer 5, and a window is formed by lithography and etching;
(5) Under the current limiting layer 5, 13 pairs of SiO with thickness of 62nm and 46nm are alternately deposited by electron beam evaporation 2 /HfO 2 Forming an upper dielectric DBR structure 6;
(7) Etching through the left and right side edges of the upper DBR structure 6 and the current confinement layer 5 by adopting a combination of lithography and dry etching to expose the left and right side edges of the lateral P-N junction active layer 3, respectively depositing a P-type metal electrode 7 and an N-type metal electrode 11 at the left and right side edges of the P-N junction active layer 3, and evaporating N-type metal electrode Ti/Al/Ni/Au by adopting an electron beam, wherein the thickness is 10nm/100nm/20nm/100nm, and the thickness is 30nm/200nm.
Example 5:
as shown in fig. 6, a method for manufacturing a novel nitride vertical structure laser device of example 1, which adopts a positive mounting manner, comprises the steps of:
(1) Depositing an AlN low-temperature buffer layer 2 with the thickness of 50nm and 39nm on a sapphire substrate 1 based on a magnetron sputtering technology, putting the AlN low-temperature buffer layer 2 into MOCVD equipment, and epitaxially growing a nitride lower DBR structure 4 at a high temperature of 1100 ℃, wherein the nitride lower DBR structure 4 adopts an AlN/GaN group of materials to be alternately arranged, and the thicknesses of AlN and GaN are respectively 50nm and 39nm, and 10 pairs in total;
(2) At a high temperature of 900 ℃, epitaxially growing a nitride active layer on the nitride lower DBR structure 4 at a high temperature, wherein the nitride active layer is a GaN film with a thickness of 300nm, simultaneously, based on ion beam implantation, si ions and Mg ions are respectively implanted, the region of the nitride active layer after the Si ions are implanted is N-type, the region after the Mg ions are implanted is P-type, and then carrying out high-temperature annealing for 30 minutes at 800 ℃ to realize the preparation of a P-N junction active layer 3 in a transverse region;
(3) A 40nm AlN current limiting layer 5 is epitaxially grown on the transverse P-N junction active layer 3 at a high temperature, a window is formed through photoetching and etching, and the high temperature epitaxy temperature is 900 ℃ and the air pressure is 20torr;
(4) Alternate growth deposition of Al on AlN Current-limiting layer 5 Using ALD deposition alternate growth 15 pairs of layers each 56nm and 35nm thick 2 O 3 And TiO 2 Forming an upper dielectric DBR structure 6;
(5) Etching through Al by combining lithography and dry etching 2 O 3 /TiO 2 The left and right side edges of the dielectric upper DBR structure and the current confinement layer 5 of the semiconductor device are exposed to expose the left and right side edges of the lateral P-N junction active layer 3, then P-type metal electrode 7 and N-type metal electrode 11 are respectively deposited at the left and right side edges of the lateral P-N junction active layer 3, and the N-type metal electrode Ti/Al/Ti/Au is evaporated by electron beam with the thickness of10nm/30nm/10nm/100nm, and the thickness of the P-type metal electrode Ni/Pt is 50nm/100nm.
Claims (9)
1. A preparation method of a novel nitride vertical structure laser is characterized in that: the novel nitride vertical structure laser comprises a substrate (1), a lower DBR structure (4), a transverse P-N junction active layer (3), a current limiting layer (5) and an upper DBR structure (6) which are sequentially arranged from bottom to top, wherein the upper surface of the transverse P-N junction active layer (3) is provided with a P-type metal electrode (7) and an N-type metal electrode (11) which are positioned at the edges of the left side and the right side respectively; the lateral P-N junction active layer (3) is obtained by utilizing the epitaxial growth of a patterned buffer layer, current is laterally expanded and injected by virtue of the lateral P-N junction, the current is completely injected by a lateral N-type region and a P-type region, and the P-type metal electrode (7) and the N-type metal electrode (11) are directly contacted with the active layer;
the preparation method comprises the following steps:
(1) Alternately epitaxially growing a nitride lower DBR structure (4) on a substrate (1), the nitride lower DBR structure (4) being single polarity or having both a metal polarity region and a nitrogen polarity region;
(2) The method comprises the steps of carrying out high-temperature epitaxy on a nitride active layer on a nitride lower DBR structure (4), and carrying out selective area doping on the nitride active layer by adopting an ion beam implantation or nitride polarity regulation method so as to obtain a transverse P-N junction active layer (3), wherein when the nitride lower DBR structure (4) is of a single polarity, an ion beam implantation method is adopted, and when the nitride lower DBR structure (4) simultaneously has a metal polarity region and a nitrogen polarity region, a nitride polarity regulation method is adopted;
(3) Depositing a current limiting layer (5) on the lateral P-N junction active layer (3), and forming a window by photoetching;
(4) Depositing a dielectric upper DBR structure (6) on the current confinement layer (5);
(5) And etching through the left and right side edges of the dielectric upper DBR structure (6) and the current limiting layer (5) by photoetching to expose the left and right side edges of the transverse P-N junction active layer (3), and respectively depositing a P-type metal electrode (7) and an N-type metal electrode (11) at the left and right side edges of the transverse P-N junction active layer (3).
2. The method for manufacturing a novel nitride vertical structure laser according to claim 1, wherein: the substrate (1) is one of silicon, sapphire, silicon carbide, monocrystalline GaN or AlN; the nitride lower DBR structure (4) is formed by alternately arranging any one group of materials of GaN/AlGaN, gaN/AlN, alGaN/AlN and GaN/AlInN, wherein the thickness range of each layer is 10nm-5 mu m; the lateral P-N junction active layer (3) is a GaN, alGaN, inGaN film or a multilayer quantum well, the thickness range is 20 nm-1 mu m, and the growth mode is metal organic vapor phase epitaxy or molecular beam epitaxy; the current limiting layer (5) is AlN, al 2 O 3 ,SiO 2 ，SiN x The thickness range is 10nm-500nm, and the preparation method is one of magnetron sputtering, electron beam evaporation, thermal evaporation, molecular beam epitaxy, laser pulse deposition and atomic layer deposition; the dielectric upper DBR structure (6) is SiO 2 ,Al 2 O 3 ,TiO 2 ,HfO 2 ,ZrO 2 ,ZnO,Ta 2 O 5 The two dielectric materials are alternately arranged, the thickness of each layer is in the range of 10nm-5 mu m, and the preparation method is one of magnetron sputtering, electron beam evaporation, thermal evaporation, molecular beam epitaxy, laser pulse deposition and atomic layer deposition; the N-type metal electrode (11) is one of Ti/Al/Ti/Au, ti/Al/Ni/Au, cr/Al/Ni/Au and V/Al/Ni/Au, the thickness is 50nm-1 mu m, the P-type metal electrode (7) is one of Ni/Au, ni/Pt, pt and Au, the thickness is 50nm-1 mu m, and the preparation methods of the N-type metal electrode (11) and the P-type metal electrode (7) are one of electron beam evaporation, thermal evaporation and magnetron sputtering.
3. The method for manufacturing a novel nitride vertical structure laser according to claim 1, wherein: in the step (1), firstly, epitaxially growing a layer of nitride low-temperature buffer layer (2) on a substrate (1), then placing the nitride low-temperature buffer layer (2) into an MBE (molecular beam epitaxy) device or MOCVD (metal organic chemical vapor deposition) device to epitaxially grow a nitride lower DBR (distributed Bragg reflector) structure (4), wherein the high-temperature epitaxy temperature is 800-1400 ℃; and (2) carrying out selective doping on the nitride active layer based on ion beam implantation while carrying out high-temperature epitaxy on the nitride lower DBR structure (4), wherein the region after one or more of Si, ge and O is an N-type region, the region after one or more of Mg and P are implanted into the nitride active layer is a P-type region, so that a transverse P-N junction active layer is formed, and then carrying out high-temperature annealing at the annealing temperature of 600-1200 ℃ for 10 minutes-2 hours.
4. The method for manufacturing a novel nitride vertical structure laser according to claim 1, wherein: firstly, epitaxially growing a layer of nitride low-temperature buffer layer (2) on a substrate (1), then placing the nitride low-temperature buffer layer (2) into MBE equipment or MOCVD equipment, epitaxially growing a layer of nitride high-temperature epitaxial film (9) at high temperature, then depositing a layer of aluminum oxide layer (10) on the nitride high-temperature epitaxial film (9), patterning the aluminum oxide layer (10) through photoetching, and placing the patterned aluminum oxide layer into the MOCVD equipment or the MBE equipment to regenerate a nitride lower DBR structure (4), wherein the high-temperature epitaxial temperature range is 800-1400 ℃, the nitride lower DBR structure (4) grown on the original nitride high-temperature epitaxial film (9) is of metal polarity, and the nitride lower DBR structure (4) grown on the aluminum oxide layer (10) is of nitrogen polarity; in the step (2), the nitride active layer which is epitaxially grown at a high temperature on the metal polar region of the nitride lower DBR structure (4) is also metal polar, the nitride active layer which is epitaxially grown at a high temperature on the nitrogen polar region of the nitride lower DBR structure (4) is also nitrogen polar, and the nitride active layer is epitaxially grown at a high temperature on the nitride lower DBR structure (4) and simultaneously Mg doping is carried out on the nitride active layer by adopting a method of regulating and controlling the nitride polar, wherein the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped to be P-type, and the nitrogen polarity of the nitride active layer still keeps N-type, so that a lateral P-N junction active layer is formed.
5. The method for manufacturing a novel nitride vertical structure laser according to claim 1, wherein: in the step (1), the substrate (1) is firstly epitaxially grownA layer of nitride low-temperature buffer layer (2), the nitride low-temperature buffer layer (2) is patterned through photoetching, the nitride low-temperature buffer layer is put into MOCVD equipment or MBE equipment to grow a nitride lower DBR structure (4) in a high-temperature epitaxy mode, the nitride lower DBR structure (4) grown on the unetched area of the original nitride low-temperature buffer layer (2) is of metal polarity, the nitride lower DBR structure (4) grown on the etched area of the original nitride low-temperature buffer layer (2) is of nitrogen polarity, and the high-temperature epitaxy temperature range is 800-1400 ℃; in the step (2), the nitride active layer which is epitaxially grown at a high temperature on the metal polar region of the nitride lower DBR structure (4) is also metal polar, the nitride active layer which is epitaxially grown at a high temperature on the nitrogen polar region of the nitride lower DBR structure (4) is also nitrogen polar, and the nitride active layer is epitaxially grown at a high temperature on the nitride lower DBR structure (4) and simultaneously Mg doping is carried out on the nitride active layer by adopting a method of regulating and controlling the nitride polar, wherein the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped to be P-type, and the nitrogen polarity of the nitride active layer still keeps N-type, so that a lateral P-N junction active layer is formed.
6. A preparation method of a novel nitride vertical structure laser is characterized in that: the novel nitride vertical structure laser comprises a substrate (1), a lower DBR structure (4), a transverse P-N junction active layer (3), a current limiting layer (5) and an upper DBR structure (6) which are sequentially arranged from bottom to top, wherein the upper surface of the transverse P-N junction active layer (3) is provided with a P-type metal electrode (7) and an N-type metal electrode (11) which are positioned at the edges of the left side and the right side respectively; the lateral P-N junction active layer (3) is obtained by utilizing the epitaxial growth of a patterned buffer layer, current is laterally expanded and injected by virtue of the lateral P-N junction, the current is completely injected by a lateral N-type region and a P-type region, and the P-type metal electrode (7) and the N-type metal electrode (11) are directly contacted with the active layer;
the preparation method comprises the following steps:
(1) Preparing a transverse P-N junction active layer (3) on an original substrate (8) by adopting an ion beam implantation or nitride polarity regulation method;
(2) Depositing a dielectric lower DBR structure (4) on the lateral P-N junction active layer (3);
(3) Bonding a new substrate (1) on the dielectric lower DBR structure (4) and removing the original substrate (8) below the lateral P-N junction active layer (3);
(4) Depositing a current limiting layer (5) below the lateral P-N junction active layer (3), and forming a window by photoetching;
(5) Depositing a dielectric upper DBR structure (6) under the current confinement layer (5);
(6) And etching through the left and right side edges of the dielectric upper DBR structure (6) and the current limiting layer (5) by photoetching to expose the left and right side edges of the transverse P-N junction active layer (3), and respectively depositing a P-type metal electrode (7) and an N-type metal electrode (11) at the left and right side edges of the transverse P-N junction active layer (3).
7. The method for manufacturing a novel nitride vertical structure laser according to claim 6, wherein: in the step (1), firstly, a layer of nitride low-temperature buffer layer (2) is epitaxially grown on an original substrate (8), then, the nitride low-temperature buffer layer (2) is put into MBE equipment or MOCVD equipment to epitaxially grow a nitride active layer at a high temperature, the high-temperature epitaxy temperature range is 800-1400 ℃, the nitride active layer is epitaxially grown at the high temperature and is simultaneously doped in a selected area based on ion beam implantation, the area after one or more of Si, ge and O are implanted into the nitride active layer is an N-type area, the area after one or more of Mg and P are implanted into the nitride active layer is a P-type area, so that a transverse P-N junction active layer (3) is obtained, and then, the annealing temperature range is 600-1200 ℃ and the annealing time range is 10 minutes-2 hours.
8. The method for manufacturing a novel nitride vertical structure laser according to claim 6, wherein: in the step (1), firstly, epitaxially growing a layer of nitride low-temperature buffer layer (2) on an original substrate (8), then placing the nitride low-temperature buffer layer (2) into MBE equipment or MOCVD equipment, epitaxially growing a layer of nitride high-temperature epitaxial film (9) at high temperature, and then depositing a layer of oxidation on the nitride high-temperature epitaxial film (9)The aluminum layer (10), pattern the alumina layer (10) through the photoetching, and put into MOCVD equipment or MBE equipment to re-grow the nitride active layer by high-temperature epitaxy, the high-temperature epitaxy temperature range is 800-1400 ℃, the nitride active layer growing on the original nitride high-temperature epitaxy film (9) is of metal polarity, the nitride active layer growing on the alumina layer (10) is of nitrogen polarity, while growing the nitride active layer by high-temperature epitaxy, the nitride active layer is doped with Mg by adopting a method of regulating and controlling the nitride polarity, the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped to be P-type, and the nitrogen polarity of the nitride active layer still keeps N-type, so that a lateral P-N junction active layer is formed.
9. The method for manufacturing a novel nitride vertical structure laser according to claim 6, wherein: in the step (1), firstly, epitaxially growing a layer of nitride low-temperature buffer layer (2) on an original substrate (8), patterning the nitride low-temperature buffer layer (2) through photoetching, placing the patterned nitride low-temperature buffer layer into MOCVD equipment or MBE equipment for high-temperature epitaxial growth of a nitride active layer, wherein the nitride active layer grown on an unetched area of the original nitride low-temperature buffer layer (2) is of metal polarity, the nitride active layer grown on an etched area of the original nitride low-temperature buffer layer (2) is of nitrogen polarity, and simultaneously, adopting a nitride polarity regulation method to carry out Mg doping on the nitride active layer while the nitride active layer is epitaxially grown at high temperature, wherein the doping concentration range is 1 multiplied by 10 18 -6×10 19 cm 3 The metal polarity of the nitride active layer is doped to be P-type, and the nitrogen polarity of the nitride active layer still keeps N-type, so that a lateral P-N junction active layer is formed.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04315489A (en) * | 1991-04-12 | 1992-11-06 | Japan Aviation Electron Ind Ltd | Two-wavelength semiconductor laser |
| CN1937337A (en) * | 2005-06-15 | 2007-03-28 | 阿瓦戈科技Ecbuip(新加坡)股份有限公司 | Single epitaxial lateral overgrowth transverse p-n junction nitride semiconductor laser |
| CN103227265A (en) * | 2013-04-12 | 2013-07-31 | 厦门大学 | Non-planar bonding method for fabricating gallium nitride-based light emitting device |
| CN109616541A (en) * | 2018-10-29 | 2019-04-12 | 华中科技大学 | Transition-metal dichalcogenide transverse direction homogeneity joint solar cell and preparation method thereof |
| CN111326611A (en) * | 2018-12-17 | 2020-06-23 | 中国科学院宁波材料技术与工程研究所 | Method for etching table top of III-nitride semiconductor light-emitting device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103872580B (en) * | 2014-01-24 | 2016-12-07 | 中国科学院长春光学精密机械与物理研究所 | Dielectric film current-limiting type vertical cavity surface emitting laser and preparation method thereof |
| US20150311673A1 (en) * | 2014-04-29 | 2015-10-29 | Princeton Optronics Inc. | Polarization Control in High Peak Power, High Brightness VCSEL |
| CN105609602B (en) * | 2015-12-29 | 2017-10-31 | 中国科学院半导体研究所 | Visible light communication upside-down mounting RCLED and preparation method thereof |
-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04315489A (en) * | 1991-04-12 | 1992-11-06 | Japan Aviation Electron Ind Ltd | Two-wavelength semiconductor laser |
| CN1937337A (en) * | 2005-06-15 | 2007-03-28 | 阿瓦戈科技Ecbuip(新加坡)股份有限公司 | Single epitaxial lateral overgrowth transverse p-n junction nitride semiconductor laser |
| CN103227265A (en) * | 2013-04-12 | 2013-07-31 | 厦门大学 | Non-planar bonding method for fabricating gallium nitride-based light emitting device |
| CN109616541A (en) * | 2018-10-29 | 2019-04-12 | 华中科技大学 | Transition-metal dichalcogenide transverse direction homogeneity joint solar cell and preparation method thereof |
| CN111326611A (en) * | 2018-12-17 | 2020-06-23 | 中国科学院宁波材料技术与工程研究所 | Method for etching table top of III-nitride semiconductor light-emitting device |
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