CN103227265A - Non-planar bonding method for fabricating gallium nitride-based light emitting device - Google Patents
Non-planar bonding method for fabricating gallium nitride-based light emitting device Download PDFInfo
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Abstract
The invention discloses a non-planar bonding method for fabricating a gallium nitride-based light emitting device, and relates to a gallium nitride-based light emitting device. The method comprises the steps of fabricating a GaN-based epitaxial wafer with a sapphire substrate, fabricating at least one of a conducting layer, a current limiting layer, a metal contact layer and a distributed Bragg reflector on the epitaxial wafer to form a non-planar structure, fabricating a metal layer on the non-planar structure, conducting polished finish on the surface of the non-planar structure after the metal layer is fabricated, forming a first metal-bearing layer, preparing a second metal-bearing layer on a substrate with a good conducting property, bonding the first metal-bearing layer with the second metal-bearing layer under a vacuum or nitrogen atmosphere, and bonding a GaN-based non-planar structure light emitting chip with the substrate of the second metal-bearing layer. A GaN-based membrane with the non-planar structure is transferred to the substrate with good thermal and electrical conductivities, such as the silicon and copper substrates, so that the radiating condition of the light emitting device is improved; workable current density of the device can be increased; and the light power is increased.
Description
Technical field
The present invention relates to gallium nitride base light-emitting device, especially relate to a kind of on-plane surface bonding method that is used to make gallium nitride base light-emitting device.
Background technology
Gallium nitride-based material belongs to the direct gap semiconductor material and has continuously adjustable band gap, and emission wavelength has been contained near-infrared under the room temperature, as seen reaches the deep ultraviolet wave band.Because its stable machinery and chemical property, the luminescent device of making based on gallium nitride-based material is with a wide range of applications in fields such as illumination, panchromatic demonstration, optical storage, laser printing and communications.Wherein gallium nitrate based vertical cavity surface emitting laser, resonant cavity LED, great power LED are the focuses that current research is rather paid close attention to.
Owing to be difficult to obtain the second best in quality gallium nitride single crystal substrate, at present in the gallium nitride material epitaxial growth technology, have with the gallium nitride lattice mismatch and thermal mismatching is less and the Sapphire Substrate of price economy has accounted for leading position.But because sapphire poor thermal conductivity makes that the heat dissipation problem of gallium-nitride-based devices is more serious, especially high current density injects down, has a strong impact on device performance thereby high quantity of heat production raises device temperature.In order to improve this situation, utilizing metal bonding and laser lift-off technique that the gallium nitride-based epitaxial structure is transferred on the good substrate of thermal conductivity is to realize that high current density injects the key (S.J.Wang of gallium nitride base light-emitting device down, K.M.Uang, et al., Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes, Appl Phys Lett, 2005,87 (1): 0111111; R.H.Horng, C.C.Chiang, et al., Enhanced thermal dissipation and light output of GaN/Sapphire light-emitting diode by direct Cu electroplating, Electrochem Solid ST, 2008,11 (11): H300-H302).The metal bonding technology of general report, be mainly used in the vertical stratification LED of surfacing, and in vertical cavity surface emitting laser resonant cavity LED, need to adopt the speculum of high reflectance (R〉99%), this speculum is that the distribution Bragg reflector (DBR) that quarter-wave two kinds of material alternating growths with different refractivity form constitutes by thickness usually, and this DBR generally is insulating properties and thermal insulation, usually DBR to be made the nonplanar structure of area-shaped, the shoulder height of making structure has more than the 1 μ m usually, adopts the metal bonding technology of general report to be difficult to realize.
Summary of the invention
The object of the present invention is to provide a kind of on-plane surface bonding method that is used to make gallium nitride base light-emitting device.
The present invention includes following steps:
1) makes GaN base epitaxial wafer with sapphire substrates;
2) on epitaxial wafer, make at least a in conductive layer, current-limiting layer, metal contact layer and the distribution Bragg reflector, form nonplanar structure;
3) on nonplanar structure, make metal level;
4) polishing is carried out on the surface of the nonplanar structure after making metal level, forms first metal-containing layer;
5) preparation second metal-containing layer in the good substrate of thermal conductivity;
6) at vacuum or nitrogen atmosphere, fit described first metal-containing layer and second metal-containing layer are bonded together the substrate of the gallium nitrate based nonplanar structure luminescence chip and second metal-containing layer.
In step 2) in, methods such as described making can be adopted and peel off, burn into etching; Described conductive layer can be transparency conducting layer or semitransparent conductive layer; Described conductive layer can be selected from a kind of in indium tin oxide layer, indium-zinc oxide layer, zinc oxide film, Al-Doped ZnO layer, gallium-doped zinc oxide layer, the nickel-gold layer etc.; A kind of in the optional autoxidation silicon of described current-limiting layer current-limiting layer, silicon nitride current-limiting layer, aluminium oxide current-limiting layer, the tantalum oxide current-limiting layer etc.
In step 3), described making metal level can adopt evaporation or sputtering method to make metal level; Described metal layer thickness surpasses the highest thickness of nonplanar structure at least.
In step 4), described carry out polishing after, removed the metal level of projection, make it form a flat surface.
In step 4) and step 5), the composition of described first metal-containing layer and second metal-containing layer can be at least a metal in the bonding metals such as Au, In, Sn, Cu, Pb, the perhaps alloy of at least two kinds of metals.
In step 5), the substrate that described thermal conductivity is good can be selected from silicon, copper, pottery or other thermal conductivity high metal and nonmetallic materials.
In step 6), the pressure of described bonding can be 0～10MPa, and the temperature of described bonding can be 100～400 ℃, and the time of described bonding is 5～90min.
The present invention adopts above-mentioned bonding method will have the gallium nitrate based film transfer of nonplanar structure to the substrate with good heat conductive and good conductivity, as substrates such as silicon and copper, thereby improve the heat radiation situation of luminescent device, improve the current density that device can be worked, increase luminous power.
Mentioned on-plane surface bonding among the present invention mainly is various structures of having produced different-thickness on the gallium nitride epitaxial slice, and the shoulder height that this structure forms has more than the 1 μ m usually, and the bonding mode of general report can not satisfy the bonding of this nonplanar structure.
Outstanding advantage of the present invention is: the chip that surpasses 1 μ m at the nonplanar structure shoulder height, by evaporation or sputter thick metal layers, thereby and thick metal layers is carried out chemical mechanical polish process obtain an even curface and carry out bonding again, method is simple, the rate of finished products height.Solved the deficiency that to carry out the planar structure bonding in the metal bonding of general report.Therefore the on-plane surface bonding techniques that is provided among the present invention is the key technology of making vertical cavity surface emitting laser, resonant cavity LED.Certainly, the present invention also can be used to make vertical stratification LED device.
Description of drawings
Fig. 1 is the gallium nitrate based film nonplanar structure of a sapphire substrates schematic diagram.
Fig. 2 is an evaporation thick metal layers schematic diagram on nonplanar structure.
Fig. 3 is to structure polishing back schematic diagram.
Fig. 4 is the bonding schematic diagram.
Fig. 5 is the on-plane surface bonding figure as a result that is used to make gallium nitride base light-emitting device.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below be example, and with reference to accompanying drawing, the invention will be further described with gallium nitrate based vertical cavity surface emitting laser.
1) on Sapphire Substrate 11, utilizes the MOCVD method, successively low temperature growth buffer layer, unadulterated GaN resilient coating, the GaN layer of mixing Si, InGaN/GaN multiple quantum well active layer, mix the AlGaN layer of Mg and mix GaN such as the GaN layer base epitaxial loayer 12 of Mg, and after the epitaxial wafer growth is finished, carry out high annealing, to improve hole concentration.
2) on above-mentioned epitaxial wafer, adopt the PECVD one whole layer of SiO that grow
2Insulating barrier 13 is by inductively coupled plasma etching SiO partly
2, form the aperture that an electric current injects; Then by photoetching and the ITO layer 14 of evaporation making than electric current hand-hole slightly larger in diameter; On ITO, make TiO again
2/ SiO
2DBR high refractive index layer 15, DBR layer are by the refractive index difference, and thickness is that quarter-wave two kinds of material alternating growths form, and reflectivity is more than 99%, the about 2 μ m of DBR thickness this moment;
3) the Au layer 21 of evaporation 4 μ m on said structure;
4) the said structure sapphire simultaneously is attached on the polishing machine mould, metal is simultaneously gently thrown, form the Au layer 31 after polishing;
5) evaporation same metal 41 on cleaned Si42;
6) in vacuum environment, 350 ℃, the GaN material after will polishing under the 4MPa pressure is in the same place with the wafer bonding that has evaporated Au, as shown in Figure 4.
7) peel off sapphire with 248nm KrF laser, be about to GaN epitaxial film and nonplanar structure and transfer on the Si substrate;
8) by inductively coupled plasma etching discrete device, DBR51 in the making makes n type electrode 52, finally finishes VCSEL and makes, as shown in Figure 5.Can be used for making vertical cavity surface emitting laser, resonant cavity LED, vertical stratification LED etc.
Claims (10)
1. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device, it is characterized in that may further comprise the steps:
1) makes GaN base epitaxial wafer with sapphire substrates;
2) on epitaxial wafer, make at least a in conductive layer, current-limiting layer, metal contact layer and the distribution Bragg reflector, form nonplanar structure;
3) on nonplanar structure, make metal level;
4) polishing is carried out on the surface of the nonplanar structure after making metal level, forms first metal-containing layer;
5) preparation second metal-containing layer in the good substrate of thermal conductivity;
6) at vacuum or nitrogen atmosphere, fit described first metal-containing layer and second metal-containing layer are bonded together the substrate of the gallium nitrate based nonplanar structure luminescence chip and second metal-containing layer.
2. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 2) in, described making is adopted and is peeled off, corrosion or lithographic method.
3. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 2) in, described conductive layer is transparency conducting layer or semitransparent conductive layer.
4. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 2) in, described conductive layer is selected from a kind of in indium tin oxide layer, indium-zinc oxide layer, zinc oxide film, Al-Doped ZnO layer, gallium-doped zinc oxide layer, the nickel-gold layer.
5. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 2) in, described current-limiting layer is selected from a kind of in silica current-limiting layer, silicon nitride current-limiting layer, aluminium oxide current-limiting layer, the tantalum oxide current-limiting layer.
6. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 3), described making metal level adopts evaporation or sputtering method to make metal level.
7. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 3), described metal layer thickness surpasses the highest thickness of nonplanar structure at least.
8. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 4) and step 5), described first metal-containing layer and second metal-containing layer consist of at least a metal in Au, In, Sn, Cu, the Pb bonding metal, the perhaps alloy of at least two kinds of metals.
9. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 5), the substrate that described thermal conductivity is good is selected from silicon, copper, pottery or other thermal conductivity high metal and nonmetallic materials.
10. be used to make the on-plane surface bonding method of gallium nitride base light-emitting device according to claim 1, it is characterized in that in step 6), the pressure of described bonding is 0～10MPa, and the temperature of described bonding is 100～400 ℃, and the time of described bonding is 5～90min.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104634767A (en) * | 2015-03-03 | 2015-05-20 | 厦门大学 | Manufacturing method of gallium nitride (GaN) based resonant cavity gas sensor |
| CN109546531A (en) * | 2017-09-22 | 2019-03-29 | 株式会社沙迪克 | The manufacturing method of luminescent device |
| CN110783439A (en) * | 2019-10-31 | 2020-02-11 | 南京亮芯信息科技有限公司 | Vertical structure LED integrated with DBR and forming method thereof |
| WO2020139197A1 (en) * | 2018-12-28 | 2020-07-02 | Advanced Micro Foundry Pte. Ltd. | Improvements in or relating to a distributed feedback laser device for photonics integrated circuit and a method of manufacture |
| CN111725368A (en) * | 2020-06-30 | 2020-09-29 | 中南大学 | GaN-based vertical structure Micro-cavity-LED based on electroplating technology and preparation method thereof |
| CN111785819A (en) * | 2020-06-29 | 2020-10-16 | 厦门大学 | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof |
| CN114069387A (en) * | 2020-08-07 | 2022-02-18 | 中国科学院宁波材料技术与工程研究所 | Novel nitride vertical structure laser and preparation method thereof |
| WO2022104789A1 (en) * | 2020-11-23 | 2022-05-27 | 苏州晶湛半导体有限公司 | Preparation method for resonant cavity light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104634767A (en) * | 2015-03-03 | 2015-05-20 | 厦门大学 | Manufacturing method of gallium nitride (GaN) based resonant cavity gas sensor |
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| CN109546531B (en) * | 2017-09-22 | 2020-12-22 | 株式会社沙迪克 | Method for manufacturing light emitting device |
| WO2020139197A1 (en) * | 2018-12-28 | 2020-07-02 | Advanced Micro Foundry Pte. Ltd. | Improvements in or relating to a distributed feedback laser device for photonics integrated circuit and a method of manufacture |
| CN110783439A (en) * | 2019-10-31 | 2020-02-11 | 南京亮芯信息科技有限公司 | Vertical structure LED integrated with DBR and forming method thereof |
| CN111785819A (en) * | 2020-06-29 | 2020-10-16 | 厦门大学 | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof |
| CN111785819B (en) * | 2020-06-29 | 2021-09-07 | 厦门大学 | GaN-based narrow-band emission resonant cavity light-emitting diode and manufacturing method thereof |
| CN111725368A (en) * | 2020-06-30 | 2020-09-29 | 中南大学 | GaN-based vertical structure Micro-cavity-LED based on electroplating technology and preparation method thereof |
| CN114069387A (en) * | 2020-08-07 | 2022-02-18 | 中国科学院宁波材料技术与工程研究所 | Novel nitride vertical structure laser and preparation method thereof |
| CN114069387B (en) * | 2020-08-07 | 2024-03-26 | 中国科学院宁波材料技术与工程研究所 | Novel nitride vertical structure laser and preparation method thereof |
| WO2022104789A1 (en) * | 2020-11-23 | 2022-05-27 | 苏州晶湛半导体有限公司 | Preparation method for resonant cavity light-emitting diode |
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