CN101378097A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN101378097A CN101378097A CNA2007101425704A CN200710142570A CN101378097A CN 101378097 A CN101378097 A CN 101378097A CN A2007101425704 A CNA2007101425704 A CN A2007101425704A CN 200710142570 A CN200710142570 A CN 200710142570A CN 101378097 A CN101378097 A CN 101378097A
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Abstract
The invention discloses a light emitting diode (LED) and a manufacturing method thereof. The manufacturing method of the LED at least comprises the following steps: a refraction dielectric layer, a joint layer, an epitaxial structure and a first electrode are sequentially formed on a transparent carrier, wherein, the epitaxial structure sequentially forms a first electrical semiconductor layer, an active layer and a second electrical semiconductor layer; a second electrode is formed on a part surface of the second electrical semiconductor layer, therefore the LED is formed. The LED can refract the internal rays thereof by virtue of the refraction dielectric layer, thus being capable of improving light-extraction rate and further enhancing luminous efficiency.
Description
Technical field
The present invention relates to a kind of light-emitting diode and its manufacture method, particularly relate to a kind of light-emitting diode and its manufacture method that promotes light extraction efficiency.
Background technology
Light-emitting diode has homostyructure (Homostructure), single heterojunction structure (SingleHeterostructure), a double-heterostructure (Double Heterostructure by a kind of; DH) or multiple quantum trap (Multiple Quantum Well; MQW) structure is piled up the epitaxial structure that forms, and its energy natural radiation goes out the p-n junction rectifier of the light of different wave length.Because therefore the good light electrical characteristics such as coloured light that light-emitting diode has low power consumption, lower calorific value, operation lifetime length, impact resistance, volume is little, reaction speed is fast and can sends wavelength stabilization often are applied to the indicator light of household electrical appliances, instrument, the using light source and the photoelectricity communication field of photovoltaic.
Traditional light-emitting diode is at a substrate (Substrate), coating layer under the n type, coating layer on active layers and the p type, luminous by electric current by the epitaxial structure of active layers, and change the lumination of light emitting diode wavelength by various different composition of epitaxial structure.
Usually, for light-emitting diode, the height of luminosity depends primarily on the quantum efficiency of active layers (Quantum Efficiency) and light takes out efficient (Light Extraction Efficiency).The quantum efficiency of active layers is higher, and then the luminosity of light-emitting diode improves thereupon, and the quantum efficiency of active layers is general main to increase its efficient by the brilliant quality of heap of stone and the structural design of active layers.On the other hand, light takes out that efficient is higher, and the luminosity of light-emitting diode also can increase, and the improvement that light takes out efficient mainly is devoted to overcome in the photon that active layers sends most of phenomenon that causes light loss at the light-emitting diode inner full-reflection.
When the light that produces when the active layers of traditional light-emitting diode for example was incident to the GaAs substrate down, because the energy gap of GaAs substrate is less, thereby the light that is incident to the GaAs substrate will be absorbed, and can't produce high efficiency light-emitting diode.
At present, some existing LED technology can be in order to avoiding the extinction problem of substrate, yet these technology all have its shortcoming and restriction.For example people such as Sugawara is published in [Appl.Phys Lett.Vol.61,1775-1777 (1992)] and has just disclosed a kind of utilization and add one deck and disperse Bragg reflecting layer (Distributed Bragg Reflector; DBR) on the GaAs substrate, so as to being reflected into the light of directive GaAs substrate, and reducing the GaAs substrate and absorb, yet since the DBR reflector only for effectively reflecting near the luminous energy that is normally incident in the GaAs substrate, so effect and little.
Again, for example people such as Kish is published in [Appl.Phys Lett.Vol.64, No.21,2839, (1994) document, name is called " Very high-efficiency semiconductor wafer-bondedtransparent-substrate (AlxGal-x) 0.5 In 0.5P/GaP "] the transparent mode substrate (Transparent-Substrate of a kind of adhesive wafer of teaching (Waferbonding); TS) (AlxGal-x) 0.5 In 0.5P/GaP light-emitting diode.This TS AlGaInP LED utilizes gas phase brilliant method (VPE) of heap of stone and P type gallium phosphide (GaP) window (Window) layer of formation thickness quite thick (about 50 μ m), and then optionally removes N p type gallium arensidep (GaAs) substrate with existing chemical method for etching.Coating layer is bonded on the n type gallium phosphide substrate that thickness is about 8-10mil under N type (AlxGal-x) the 0.5 In 0.5P that subsequently this is exposed.Because this wafer bonding (Wafer Bonding) directly bonds together two kinds of III-V compound semiconductors, therefore will be at higher temperature, heating and pressurizing a period of time just can finish.With regard to luminosity, the TS AlGaInP LED that this mode obtained is than traditional absorption substrate (Absorbing-Substrate; AS) more than the big twice of AlGaInP LED.Yet the shortcoming of this TS AlGaInPLED is exactly that manufacture process is too numerous and diverse, and can have the high-ohmic of a non-ohmic contact at joint interface usually, therefore, can't obtain high production yield and be difficult to reduce manufacturing cost.
Another kind of conventional art, for example people such as Horng is published in [Appl.Phys.Lett.Vol.75, No.20,3054 (1999) documents, name is called " AlGaInP light-emitting diodes with mirror substratesfabricated by wafer bonding "].A kind of wafer integration technology of utilizing of people's teachings such as Horng is to form minute surface substrate (Mirror-Substrate; MS) AlGaInP/metal/silica/silicon LED.Its use AuBe/Au as sticky material so as to engaging silicon substrate and LED epitaxial layer.Yet under the 20mA operating current, the luminous intensity of this MS AlGaInP LED only is about 90mcd, still lacks 40 of percentage at least than the luminous intensity of TSAlGaInP LED, so its luminous intensity can't be satisfactory.
This shows that above-mentioned existing light-emitting diode and its manufacture method obviously still have inconvenience and defective, and demand urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new light-emitting diode and its manufacture method, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing light-emitting diode and its manufacture method exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new light-emitting diode and its manufacture method, can improve general existing light-emitting diode and its manufacture method, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is, overcome the defective that existing light-emitting diode and its manufacture method exist, and provide a kind of new light-emitting diode and its manufacture method, technical problem to be solved is to make it promote the light extraction efficiency of light-emitting diode, promote luminous efficiency, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of light-emitting diode that the present invention proposes, it comprises at least: a transparency carrier; One refraction dielectric layer is located on this transparency carrier; One knitting layer is located on this refraction dielectric layer; One epitaxial structure is located on this knitting layer, and wherein this epitaxial structure comprises at least: one second electrical semiconductor layer, and be located on this knitting layer, and expose part surface; One active layers is located on this second electrical semiconductor layer; And one first electrical semiconductor layer, be located on this active layers, wherein this second electrical semiconductor layer electrically in contrast to this first electrical semiconductor layer; One second electrode is located on this part surface of this second electrical semiconductor layer; And one first electrode, be located on this first electrical semiconductor layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode, wherein said refraction dielectric layer has a pattern structure.
Aforesaid light-emitting diode, wherein said refraction dielectric layer are piled up by a plurality of dielectric layer to be formed, and the refractive index of these dielectric layers is identical.
Aforesaid light-emitting diode, wherein said refraction dielectric layer are piled up by a plurality of dielectric layer to be formed, and the refractive index of these dielectric layers is inequality.
Aforesaid light-emitting diode, the refractive index of wherein said refraction dielectric layer is between 1 to 3.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of manufacturing method for LED that the present invention proposes, it comprises at least: a growth substrate is provided; Form an epitaxial structure on this one-tenth long substrate, wherein this epitaxial structure forms one first electrical semiconductor layer, an active layers and one second electrical semiconductor layer in regular turn, and this second electrical semiconductor layer electrically in contrast to this first electrical semiconductor layer; One transparency carrier is provided; Form a refraction dielectric layer on this transparency carrier; Form a knitting layer on this refraction dielectric layer; Fit this epitaxial structure on this knitting layer; Remove this one-tenth long substrate; Remove this first electrical semiconductor layer of part and this active layers of part, to expose the part surface of this second electrical semiconductor layer; Form one second electrode on the part surface of this second electrical semiconductor layer; And form one first electrode on the surface of this first electrical semiconductor layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid manufacturing method for LED, the step of wherein said formation refraction dielectric layer also comprises at least:
Patterning should reflect dielectric layer, had a pattern structure so as to making this refraction dielectric layer.
Aforesaid manufacturing method for LED, this refraction dielectric layer carries out patterning by an etching step in the step of wherein said patterning refraction dielectric layer.
Aforesaid manufacturing method for LED, the refraction dielectric layer carries out deposition step by a patterning light shield in the step of this refraction dielectric layer of wherein said patterning, to form this pattern structure.
Aforesaid manufacturing method for LED, the step of wherein said formation refraction dielectric layer also comprises at least:
Pile up a plurality of dielectric layers of formation, so as to forming this refraction dielectric layer.
By technique scheme, light-emitting diode of the present invention and its manufacture method have following advantage at least: the present invention is compared to the light transmittance deficiency of the transparency carrier of existing light-emitting diode, and the reflectivity of metallic reflective material after long-time or high-power operation reduces problem, the light-emitting diode of this enforcement can reflect the light of light-emitting diode inside by the refraction dielectric layer, thereby can promote light extraction efficiency, and then increase luminous efficiency.
The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing light-emitting diode and its manufacture method have the outstanding effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A to Fig. 1 F is the profile of manufacture process of the light-emitting diode of the first embodiment of the present invention.
Fig. 2 is the profile of the light-emitting diode of the second embodiment of the present invention.
Fig. 3 is the profile of the light-emitting diode of the third embodiment of the present invention.
Fig. 4 is the profile of the light-emitting diode of the fourth embodiment of the present invention.
Fig. 5 A and Fig. 5 B are the profiles of manufacture process of the light-emitting diode of the fifth embodiment of the present invention.
100: light-emitting diode 110: become long substrate
120: 121: the first electrical semiconductor layers of epitaxial structure
122: 123: the second electrical semiconductor layers of active layers
123a: 124: the second electrical contact layers of part surface
125: the first electrical contact layers 130: knitting layer
140,140a, 140b, 140c: refraction dielectric layer
141: dielectric layer 150: transparency carrier
170: the second electrodes of 160: the first electrodes
180: insulating protective layer 190: etch stop layer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked in order further to set forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to light-emitting diode and its embodiment of its manufacture method, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Please refer to Figure 1A to Fig. 1 F, it is the profile of manufacture process of the light-emitting diode of first embodiment of the invention.The light-emitting diode 100 of present embodiment includes epitaxial structure 120, knitting layer 130, refraction dielectric layer 140, transparency carrier 150, first electrode 160, second electrode 170 and insulating protective layer 180 at least.Above-mentioned refraction dielectric layer 140, knitting layer 130 and epitaxial structure 120 are stacked on the transparency carrier 150 in order, wherein above-mentioned epitaxial structure 120 has the first electrical semiconductor layer 121, active layers 122, second electrical semiconductor layer 123, the second electrical contact layer 124 and the first electrical contact layer 125, and the second electrical semiconductor layer 123 exposes a part of surperficial 123a.First electrode 160 forms on the first electrical contact layer 125, and second electrode 170 is formed at the part surface 123a of the second electrical semiconductor layer 123, thereby forms horizontal conducting type structure.
Please refer to Figure 1A, at first, be provided as long substrate 110.This becomes long substrate 110 for example to be: GaAs (GaAs), silicon, carborundum (SiC), aluminium nitride (AlN) substrate, sapphire, indium phosphide or gallium phosphide.
Then, form epitaxial structure 120 on one-tenth long substrate 110, epitaxial structure 120 forms by a brilliant technology of heap of stone, for example organic metal vapour deposition brilliant method (MOCVD) of heap of stone, the brilliant method (LPE) of liquid built or molecular beam epitaxy method brilliant technologies of heap of stone such as (MBE).This epitaxial structure 120 has the first electrical semiconductor layer 121, active layers 122, the second electrical semiconductor layer 123 and the second electrical contact layer 124, be deposited on in regular turn on the long substrate 110, wherein the first electrical semiconductor layer 121 electrically is different from the second electrical semiconductor layer 123.First of present embodiment electrically is different electrical with second electrically.When first electrically was the N type, second was the P type electrically; And when first electrically was the P type, second electrically then was the N type.In the present embodiment, the material of the first electrical semiconductor layer 121 for example is a N type AlGaInP (AlGaInP), active layers 122 is for example by the formed multiple quantum trap structure of AlGaInP material, the material of the second electrical semiconductor layer 123 for example is a P type AlGaInP (AlGaInP), and the material of the second electrical contact layer 124 can for example be tin indium oxide (Indium Tin Oxide), indium oxide (IndiumOxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zincoxide), magnesium oxide (Magnesium oxide) or titanium nitride (Titanium Nitride) etc. have the material of conductivity and light transmission.In addition, the epitaxial structure 120 of present embodiment can for example be by: homostyructure, single heterojunction structure, double-heterostructure, multiple quantum trap structure or above-mentioned combination in any are piled up to form.
Please refer to Figure 1B, then, provide transparency carrier 150.The transparency carrier 150 of present embodiment is made with transparent material, for example can be: aluminium oxide (Al
2O
3), zinc selenide (ZnSe), zinc oxide (ZeO), gallium phosphide (GaP) or glass etc.
Please refer to Fig. 1 C, then, form refraction dielectric layer 140 on transparency carrier 150.Refraction dielectric layer 140 is formed with the dielectric material with high index of refraction, for example: silica (SiO
x), silicon nitride (SiN
x), titanium oxide (TiO
x) or aluminium oxide (AlO
x), in order to the light of refraction light-emitting diode 100 inside,, and promote luminous efficiency so as to the increase light extraction efficiency.Wherein, the refraction dielectric layer 140 refractive index for example essence between 1 to 3.
Then, utilize for example coating (Coating), deposition or evaporation modes such as (Evaporation) to form knitting layer 130 on refraction dielectric layer 140.The material of knitting layer 130 can for example be: conductive doped material, aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin, titanium, lead, copper, palladium or its alloy in elargol, spontaneous conducting polymer or the macromolecule, in order to bonding epitaxy structure 120 and refraction dielectric layer 140, shift (Substrate Transferring) action to carry out a substrate.
Please refer to Fig. 1 D, then, applying epitaxial structure 120 is on knitting layer 130.Transparency carrier 150 for example can utilize wafer joining technique (Wafer Bonding) to fit.
Please refer to Fig. 1 E, then, remove into long substrate 110, thereby expose the surface of the first electrical semiconductor layer 121 of epitaxial structure 120.Become long substrate 110 for example to be removed by laser lift-off technique, etch process or chemical mechanical milling tech.
Please refer to Fig. 1 F, then, form the first electrical contact layer 125 on the first electrical semiconductor layer 121 of epitaxial structure 120.The material of the first electrical contact layer 125 can for example be: tin indium oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin (Cadmium Tin Oxide), zinc oxide (Zinc oxide), magnesium oxide (Magnesium oxide) or titanium nitride (Titanium Nitride) etc. have the material of conductivity and light transmission.
Then, utilize dry-etching, Wet-type etching or machine cuts to grind and remove part first electrical semiconductor layer 121 and the part active layers 122, to expose the part surface 123a of the second electrical semiconductor layer 123.Then, utilize hot evaporation (Thermal Evaporation), electron beam evaporation plating (E-beam) or ion beam sputtering deposition methods such as (Sputtering) to form first electrode 160 on the first electrical contact layer 125, and form second electrode 170 on the part surface 123a of the second electrical semiconductor layer 123, to form horizontal conducting type structure.Then; form insulating protective layer 180 on the first electrical contact layer 125 and 123 unlapped surfaces of the second electrical semiconductor layer; with the packaging protection element; the material of insulating protective layer 180 for example can be: siliceous oxide, nitride or high dielectric organic material, thereby finish the light-emitting diode 100 of present embodiment.Wherein the material of first electrode 160 can for example be: In, Al, Ti, Au, W, InSn, TiN, WSi, PtIn
2, Nd/Al, Ni/Si, Pd/Al, Ta/Al, Ti/Ag, Ta/Ag, Ti/Al, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, Cr/Ni/Au, Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or its alloy material.And the material of second electrode 170 can for example be: Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/Ru, Ti/Pt/Au, Pd/Ni, Ni/Pd/Au, Pt/Ni/Au, Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, NiIn, Pt
3In
7Or its alloy material.
By learning after the optical analog, the light-emitting diode 100 of present embodiment is compared to existing light-emitting diode, and the light extraction efficiency on axial (0 degree) or side direction (0 degree～90 degree) all has lifting significantly.Therefore, the light-emitting diode 100 of present embodiment can reflect the light of light-emitting diode 100 inside by the refraction dielectric layer 140 with high index of refraction, thereby promotes the light extraction efficiency of light-emitting diode 100, to increase the luminous efficiency of light-emitting diode 100.
Please refer to Fig. 2, it is the generalized section of the light-emitting diode of the second embodiment of the present invention.Below only describe, do not repeat them here about resemblance with regard to the different place of the present embodiment and first embodiment.Compared to first embodiment, the refraction dielectric layer 140a of the light-emitting diode 100 of second embodiment has pattern structure, so as to the refraction effect of further lifting refraction dielectric layer 140a.The pattern structure of refraction dielectric layer 140a is a plurality of pyramidal structures for example, and exposes the surface of partially transparent substrate 150.The pattern structure of refraction dielectric layer 140a for example can be after forming refraction dielectric layer 140a, carry out etching step (dry ecthing or wet etching), with patterning refraction dielectric layer 140a, perhaps for directly to deposit refraction dielectric layer 140a with pattern structure by patterning light shield (not illustrating).Therefore, the light-emitting diode 100 of second embodiment can further promote light extraction efficiency by the pattern structure of refraction dielectric layer 140a, increases luminous efficiency.
Please refer to Fig. 3, it illustrates the generalized section according to the light-emitting diode of the third embodiment of the present invention.Below only describe, do not repeat them here about resemblance with regard to the different place of the present embodiment and first embodiment.Compared to first embodiment, the refraction dielectric layer 140b of the light-emitting diode 100 of the 3rd embodiment is piled up by a plurality of dielectric layer 141 to be formed, so as to the refraction effect of further lifting refraction dielectric layer 140b.Wherein but the refractive index essence of these a little dielectric layers 141 is identical or essence is inequality.Therefore, the light-emitting diode 100 of the 3rd embodiment can further promote light extraction efficiency by refraction dielectric layer 140b, increases luminous efficiency.
Please refer to Fig. 4, it illustrates the generalized section according to the light-emitting diode of the fourth embodiment of the present invention.Below only describe, do not repeat them here about resemblance with regard to the different place of present embodiment and first embodiment and second embodiment.Compared to first embodiment and second embodiment, the refraction dielectric layer 140c of the light-emitting diode 100 of the 4th embodiment is piled up by a plurality of dielectric layer 141c to be formed, and has pattern structure, so as to the refraction effect of further lifting refraction dielectric layer 140c.The pattern structure of refraction dielectric layer 140c for example is a plurality of mesa-shaped (Mesa) structures, and can expose the surface of partially transparent substrate 150.Therefore, the light-emitting diode 100 of the 4th embodiment can further promote light extraction efficiency by the multi-layered patterned structure of refraction dielectric layer 140c, increases luminous efficiency.
Please refer to Fig. 5 A and Fig. 5 B, it illustrates the profile according to the manufacture process of the light-emitting diode of fifth embodiment of the invention.Compared to first embodiment, the 5th embodiment forms an etch stop layer 190 earlier on one-tenth long substrate 180, and etch stop layer 190 can adopt etch-rate and become the different material of etch-rate of long substrate 180, for example: n type AlGaInP.Then, form epitaxial structure 120 again on this etch stop layer 190.Then, carry out an etching step and remove into long substrate 180 and etch stop layer 190 in regular turn, because etch stop layer 190 is formed at between long substrate 180 and the epitaxial structure 120, thereby can avoids over etching (Over Etch) and epitaxial structure 120 is impacted.
By the embodiment of the invention described above as can be known, light transmittance deficiency compared to the transparency carrier that has light-emitting diode now, and the reflectivity of metallic reflective material after long-time or high-power operation reduces problem, the light-emitting diode of this enforcement can reflect the light of light-emitting diode inside by the refraction dielectric layer, thereby can promote light extraction efficiency, and then increase luminous efficiency.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1. light-emitting diode is characterized in that comprising at least:
One transparency carrier;
One refraction dielectric layer is located on this transparency carrier;
One knitting layer is located on this refraction dielectric layer;
One epitaxial structure is located on this knitting layer, and wherein this epitaxial structure comprises at least:
One second electrical semiconductor layer is located on this knitting layer, and exposes part surface;
One active layers is located on this second electrical semiconductor layer; And
One first electrical semiconductor layer is located on this active layers, wherein this second electrical semiconductor layer electrically in contrast to this first electrical semiconductor layer;
One second electrode is located on this part surface of this second electrical semiconductor layer; And
One first electrode is located on this first electrical semiconductor layer.
2. light-emitting diode according to claim 1 is characterized in that wherein said refraction dielectric layer has a pattern structure.
3. light-emitting diode according to claim 1 it is characterized in that wherein said refraction dielectric layer is piled up by a plurality of dielectric layer to form, and the refractive index of these dielectric layers is identical.
4. light-emitting diode according to claim 1 it is characterized in that wherein said refraction dielectric layer is piled up by a plurality of dielectric layer to form, and the refractive index of these dielectric layers is inequality.
5. light-emitting diode according to claim 1, the refractive index that it is characterized in that wherein said refraction dielectric layer is between 1 to 3.
6. manufacturing method for LED is characterized in that comprising at least:
One growth substrate is provided;
Form an epitaxial structure on this one-tenth long substrate, wherein this epitaxial structure forms one first electrical semiconductor layer, an active layers and one second electrical semiconductor layer in regular turn, and this second electrical semiconductor layer electrically in contrast to this first electrical semiconductor layer;
One transparency carrier is provided;
Form a refraction dielectric layer on this transparency carrier;
Form a knitting layer on this refraction dielectric layer;
Fit this epitaxial structure on this knitting layer;
Remove this one-tenth long substrate;
Remove this first electrical semiconductor layer of part and this active layers of part, to expose the part surface of this second electrical semiconductor layer;
Form one second electrode on the part surface of this second electrical semiconductor layer; And
Form one first electrode on the surface of this first electrical semiconductor layer.
7. manufacturing method for LED according to claim 6 is characterized in that the step of wherein said formation refraction dielectric layer also comprises at least:
Patterning should reflect dielectric layer, had a pattern structure so as to making this refraction dielectric layer.
8. manufacturing method for LED according to claim 7 is characterized in that this refraction dielectric layer carries out patterning by an etching step in the step of wherein said patterning refraction dielectric layer.
9. manufacturing method for LED according to claim 7 is characterized in that the refraction dielectric layer carries out deposition step by a patterning light shield in the step of this refraction dielectric layer of wherein said patterning, to form this pattern structure.
10. manufacturing method for LED according to claim 6 is characterized in that the step of wherein said formation refraction dielectric layer also comprises at least:
Pile up a plurality of dielectric layers of formation, so as to forming this refraction dielectric layer.
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| CNA2007101425704A CN101378097A (en) | 2007-08-29 | 2007-08-29 | Light emitting diode and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101504964A (en) * | 2008-12-16 | 2009-08-12 | 杭州士兰明芯科技有限公司 | Gallium nitride based LED epitaxial substrate and preparing process thereof |
| CN101789478A (en) * | 2010-03-04 | 2010-07-28 | 上海蓝光科技有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN111293202A (en) * | 2018-12-06 | 2020-06-16 | 新世纪光电股份有限公司 | Light emitting diode and method for manufacturing the same |
-
2007
- 2007-08-29 CN CNA2007101425704A patent/CN101378097A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101504964A (en) * | 2008-12-16 | 2009-08-12 | 杭州士兰明芯科技有限公司 | Gallium nitride based LED epitaxial substrate and preparing process thereof |
| CN101789478A (en) * | 2010-03-04 | 2010-07-28 | 上海蓝光科技有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN111293202A (en) * | 2018-12-06 | 2020-06-16 | 新世纪光电股份有限公司 | Light emitting diode and method for manufacturing the same |
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