CN112968346B - High-damage-threshold film saturable absorber device, preparation method and application - Google Patents
High-damage-threshold film saturable absorber device, preparation method and application Download PDFInfo
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- CN112968346B CN112968346B CN202110149990.5A CN202110149990A CN112968346B CN 112968346 B CN112968346 B CN 112968346B CN 202110149990 A CN202110149990 A CN 202110149990A CN 112968346 B CN112968346 B CN 112968346B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
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Abstract
The invention belongs to the technical field of lasers, and discloses a high-damage-threshold film saturable absorber device, a preparation method and application thereof, wherein the method comprises the following steps: preparing a semiconductor GaAs/AlAs absorption layer on a GaAs substrate, and plating a 2D material film on the semiconductor GaAs/AlAs absorption layer; and growing an anti-reflection film of the dielectric film on the surface of the 2D material to obtain the 2D material film saturable absorber device with high damage threshold. The semiconductor plays a role of an absorption region, the 2D film only plays a role of a relaxation region, so that the recovery time of an absorber is reduced, the damage threshold of a material is improved, and the method for preparing the 2D material film with uniform surface, controllable layer number and high repeatability is solved by optimizing parameters of the film prepared by magnetron sputtering; and preparing an antireflection film of the dielectric film on the 2D material film by an electron beam evaporation technology, so that the damage threshold of the saturable absorber of the 2D material film is improved.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a high-damage-threshold film saturable absorber device, a preparation method and application thereof.
Background
At present, the short pulse solid laser has wide application prospect in the fields of laser ranging, industrial processing, laser medical treatment and the like because of the advantages of stability, durability, high pulse energy, multiple excitation wavelengths and the like. The saturable absorber device is a core device for realizing a short-pulse passive solid laser with simple structure, ultra-fast pulse, ultra-high energy, ultra-low cost and ultra-long service life. This device is a device whose transmittance is related to the intensity of light. This means that the device will behave differently depending on the different intensities of the light as it passes through. In general, an ideal saturated absorber will absorb light of low intensity and let it pass through when the intensity is high enough. When a saturated absorber is placed in the laser cavity, the low intensity laser light is attenuated, however, since the intensity of the laser light in the unlocked mode has random variations, the randomly generated light intensity is large enough to be transmitted out of the saturated absorber. Since the light repeatedly oscillates in the laser cavity constantly, the high intensity laser light is amplified and the low intensity light is absorbed, resulting in a laser pulse output. With the rapid development of passive mode locking and Q-switched lasers, a saturable absorber device based on different materials is selected from the superior and inferior ones, and is used as a saturable absorber device with excellent performance, and the key requirements on the materials are good stability, quick response time, wide wavelength range, low optical loss, low power consumption and low cost, and is easy to integrate into a laser system, so far, the saturable absorber device with partial materials is gradually mature in the development process, such as a semiconductor saturable absorber mirror (Semiconductor saturable absorption mirror SESAM), gallium arsenide (GaAs), cr4+: YAG crystal and the like. However, only SESAM can implement passive mode-locked solid state lasers, and there are still disadvantages of low damage threshold, narrow band operation, and limited response time (≡picosecond). Therefore, the search and development of various high performance saturable absorber devices has become a focus of intense research. In recent years, with the continuous emergence of various novel 2D material saturable absorbers (such as graphene, graphene oxide, topological insulator, transition metal sulfide, black phosphorus and the like) and the rapid development of ultra-fast laser technology, how to prepare novel, broadband, high-damage-threshold and low-loss saturable absorber devices has become a key technology for developing lasers. These 2D materials are inexpensive, simple to prepare and have superior nonlinear optical response in the ultraviolet to infrared broadband compared to conventional semiconductor saturable SESAMs. However, solid mode-locked lasers based on 2D material saturable absorbers have rarely been reported, because the instability of the 2D material itself results in a low damage threshold for the novel broadband saturable absorber device, and the immature fabrication process also results in too large insertion loss of the device, which prevents the novel 2D material absorber from being applied in high power solid pulse lasers.
Through the above analysis, the problems and defects existing in the prior art are as follows: in the prior art, the instability of the 2D material itself leads to lower damage threshold of the novel broadband saturable absorption device, and the immature preparation process also leads to overlarge insertion loss of the device, thus preventing the application of the novel 2D material absorber in a high-power solid pulse laser.
The difficulty of solving the problems and the defects is as follows: the saturable absorber absorbs weak light, and releases internal energy after the light intensity reaches a saturation threshold, so that the two-dimensional material for preparing the saturable absorber has a high damage threshold, and the high damage threshold saturable absorber is a result of optimization of the material, the preparation process and the structure. Most of two-dimensional materials have low optical damage threshold values, and the preparation process based on the two-dimensional material film is not perfect, and particularly the technology for improving the damage threshold value by designing the structure of the saturable absorber is difficult to master.
The meaning of solving the problems and the defects is as follows: the high-damage-threshold saturable absorber is a core device for realizing a high-power passive laser, the novel two-dimensional material saturable absorber is an important link for realizing a wide-wavelength solid laser, and the high-damage-threshold two-dimensional material saturable absorber device is a core device for realizing a high-power, wide-band and high-stability solid laser, and has a profound application value.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention provides a high-damage-threshold film saturable absorber device, a preparation method and application thereof.
The invention is realized in that a high damage threshold thin film saturable absorber device, the method for preparing the high damage threshold thin film saturable absorber device comprises: preparing a semiconductor GaAs/AlAs absorption layer on a GaAs substrate, and plating a 2D material film on the semiconductor GaAs/AlAs absorption layer; and growing an anti-reflection film of the dielectric film on the surface of the 2D material to obtain the 2D material film saturable absorber device with high damage threshold.
Further, the preparation method of the high damage threshold film saturable absorber device specifically comprises the following steps:
firstly, preparing a semiconductor GaAs/AlAs about 25-30 pairs on a GaAs substrate through metal organic vapor phase epitaxy equipment, and preparing an absorption layer of InGaAs/GaAs at normal temperature;
sputtering a 2D material target material by adopting a magnetron sputtering radio frequency mode to obtain a 2D film with uniform surface and controllable layer number; study sputtering time, pressure intensity and influence of annealing on film quality and thickness;
preparing a dielectric film layer with high reflectivity by using electron beam evaporation equipment, wherein a 2D film is used as an optical relaxation region; the reflectivity is adjusted by adjusting the logarithm of the high-low reflecting layer, and further parameters such as the modulation depth and the like are adjusted to study the influence of the high-reflectivity film on the optical characteristics and the damage threshold of the 2D film.
Further, in the first step, the reflectivity of the semiconductor GaAs/AlAs is higher than 99%.
Further, in the second step, the 2D material target is: mo (Mo) 2 C、BN、TiC、MoS 2 And (3) a target material.
In the third step, the dielectric film material is Al 2 O 3 ，SiO 2 。
The invention further aims to provide the high damage threshold thin film saturable absorber device prepared by the preparation method of the high damage threshold thin film saturable absorber device, wherein the high damage threshold thin film saturable absorber device comprises a GaAs substrate, a GaAS/AlAs Bragg emission layer, an InGaAs/GaAs absorption layer, a 2D material relaxation layer and a high reflection medium layer from bottom to top in sequence;
an InGaAs/GaAs absorption layer and a 2D material relaxation layer are embedded between a high-reflection dielectric layer and a GaAS/AlAs Bragg emission layer with extremely high reflectivity, so as to form a Fabry-Perot standard.
Another object of the present invention is to provide a short-pulse solid-state laser for laser ranging using the high damage threshold thin-film saturable absorber device.
Another object of the present invention is to provide a short-pulse solid-state laser for industrial processing using the high damage threshold thin-film saturable absorber device.
Another object of the present invention is to provide a short-pulse solid-state laser for laser medical treatment using the high-damage-threshold thin-film saturable absorber device.
By combining all the technical schemes, the invention has the advantages and positive effects that: according to the method for preparing the 2D material film, through optimizing the parameters of the film prepared by magnetron sputtering, the problems of uniform surface, controllable layer number and high repeatability are solved; and preparing an antireflection film of the dielectric film on the 2D material film by an electron beam evaporation technology, so that the damage threshold of the saturable absorber of the 2D material film is improved.
Meanwhile, the invention combines the semiconductor absorption layer, the 2D film material and the dielectric layer to prepare the novel saturable absorber. The advantages are that: the semiconductor plays a role of an absorption region, the 2D film only plays a role of a relaxation region, so that the recovery time of an absorber is shortened, the damage threshold of a material is improved, the reflectivity is adjusted by adjusting the logarithm of a medium film high-low reflection layer on a 2D film layer, and further parameters such as the modulation depth are adjusted to study the influence of the high-reflection film on the optical characteristics and the damage threshold of the 2D film; the optimization of parameters of the semiconductor absorption region, the 2D material absorption region and the high reflection layer solves the problems of uniform surface, controllable layer number and high repeatability of the method for preparing the 2D film; the combination of the two properties of low recovery time and high damage threshold is achieved by the combination of the semiconductor absorption region and the 2D material relaxation region. According to the invention, the high-reflection film is prepared on the 2D film by an electron beam evaporation technology, so that the damage threshold of the 2D film saturable absorber is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the drawings needed in the embodiments of the present application, and it is obvious that the drawings described below are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a method for manufacturing a high damage threshold thin film saturable absorber device according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a high damage threshold thin film saturable absorber device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In view of the problems existing in the prior art, the present invention provides a high damage threshold thin film saturable absorber device, a preparation method and an application thereof, and the present invention is described in detail below with reference to the accompanying drawings.
The preparation process of the high-damage-threshold film saturable absorber device provided by the embodiment of the invention comprises the following steps: preparing a semiconductor GaAs/AlAs absorption layer on a GaAs substrate, and plating a 2D material film on the semiconductor GaAs/AlAs absorption layer; and growing an anti-reflection film of the dielectric film on the surface of the 2D material to obtain the 2D material film saturable absorber device with high damage threshold.
As shown in fig. 1, the method for preparing the high damage threshold thin film saturable absorber device according to the embodiment of the present invention includes:
s101: about 25-30 pairs of semiconductor GaAs/AlAs are prepared on a GaAs substrate by a metal organic vapor phase epitaxy apparatus (MOCVD), and an absorption layer of InGaAs/GaAs is prepared at normal temperature.
S102: sputtering a 2D material target material by adopting a magnetron sputtering radio frequency mode to obtain a 2D film with uniform surface and controllable layer number; the effect of sputtering time, pressure and annealing on film quality and thickness was studied.
S103: preparing a dielectric film layer with high reflectivity by using electron beam evaporation equipment, wherein a 2D film is used as an optical relaxation region; the reflectivity is adjusted by adjusting the logarithm of the high-low reflecting layer, and further parameters such as the modulation depth and the like are adjusted to study the influence of the high-reflectivity film on the optical characteristics and the damage threshold of the 2D film.
In S101 provided by the embodiment of the invention, the reflectivity of the semiconductor GaAs/AlAs is higher than 99%.
In S102 provided by the embodiment of the present invention, the 2D material target is: mo (Mo) 2 C、BN、TiC、MoS 2 And (3) a target material.
In S103 provided in the embodiment of the present invention, the dielectric film material is Al 2 O 3 ,SiO 2 。
As shown in fig. 2, the high damage threshold thin film saturable absorber device provided by the embodiment of the invention sequentially comprises a GaAs substrate 1, a GaAs/AlAs bragg emitter layer 2, an InGaAs/GaAs absorber layer 3, a 2D material relaxation layer 4 and a high reflection dielectric layer 5 from bottom to top. An InGaAs/GaAs absorber layer 3 (semiconductor saturable absorber layer) and a 2D material relaxation layer 4 are embedded between a highly reflective dielectric layer 5 (highly reflective film) and a GaAs/AlAs Bragg emitter layer 2 (Bragg mirror) of extremely high reflectivity to form a fabry-perot etalon, the higher the reflectivity of the two mirrors, the higher the resolution thereof. When light is incident on the novel 2D thin film saturable absorber, little light passes through the highly reflective dielectric layer and the remainder of the light is reflected into the laser cavity to be provided to the gain medium. Since the 2D material is designed to act in the relaxation region, the semiconductor InGaAs/GaAs acts in the absorption region, so that most of the light is absorbed by the semiconductor, thereby reducing the recovery time of the absorber and increasing the damage threshold of the material. Thus obtaining high-energy and narrow-width mode-locked laser output.
The technical scheme of the invention is further described below with reference to specific embodiments.
Example 1
Plating 180nm silver on quartz glass by an electron beam evaporation technology to obtain a total reflection mirror with the reflectivity more than 98%, preparing a 2D Mo2C film on the reflection mirror by magnetron sputtering, and sputtering a layer of silicon dioxide on the 2D Mo2C film as a protective layer to prepare the film saturable absorber device with high damage threshold.
Example 2
As shown in FIG. 1, first, an absorption layer of InGaAs/GaAs is prepared on a GaAs substrate by a metal organic vapor phase epitaxy apparatus at normal temperature, and GaAs/AlAs is about 25-30 pairs. And secondly, sputtering a 2D material target by adopting magnetron sputtering to obtain the 2D MoS2 film with uniform surface and controllable layer number. Finally, preparing a dielectric film layer with SiO2 high reflectivity by using electron beam evaporation equipment, adjusting the reflectivity by adjusting the logarithm of the high-low reflection layer, and further adjusting parameters such as modulation depth and the like to study the influence of the high-reflection film on the optical characteristics and damage threshold of the 2D film.
The foregoing is merely illustrative of specific embodiments of the present invention, and the scope of the invention is not limited thereto, but any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention will be apparent to those skilled in the art within the scope of the present invention.
Claims (7)
1. The preparation method of the high-damage-threshold-value film saturable absorber device is characterized in that a semiconductor GaAs/AlAs absorption layer is prepared on a GaAs substrate, and a 2D material film is plated on the semiconductor GaAs/AlAs absorption layer; growing a high-reflection film of a dielectric film on the surface of the 2D material to obtain a 2D material film saturable absorber device with a high damage threshold;
the preparation method of the high-damage-threshold film saturable absorber device specifically comprises the following steps:
firstly, preparing semiconductor GaAs/AlAs on a GaAs substrate through metal organic vapor phase epitaxy equipment, and preparing an absorption layer of InGaAs/GaAs at normal temperature;
sputtering a 2D material target material by adopting a magnetron sputtering radio frequency mode to obtain a 2D film with uniform surface and controllable layer number; study sputtering time, pressure intensity and influence of annealing on film quality and thickness;
preparing a dielectric film layer with high reflectivity by using electron beam evaporation equipment, wherein a 2D film is used as an optical relaxation region; the reflectivity is adjusted by adjusting the logarithm of the high-low reflecting layer, and further parameters such as the modulation depth and the like are adjusted to study the influence of the high-reflectivity film on the optical characteristics and the damage threshold of the 2D film;
firstly, preparing a semiconductor GaAs/AlAs 25-30 pair on a GaAs substrate through metal organic vapor phase epitaxy equipment;
in the first step, the reflectivity of the semiconductor GaAs/AlAs is higher than 99%.
2. The method for manufacturing a high damage threshold thin film saturable absorber device according to claim 1, wherein in the second step, the 2D material target is: mo (Mo) 2 C、BN、TiC、MoS 2 And (3) a target material.
3. The method of making a high damage threshold thin film saturable absorber device as set forth in claim 1, whereinIn the third step, the dielectric film material is Al 2 O 3 ，SiO 2 。
4. A high damage threshold thin film saturable absorber device prepared by the method for preparing a high damage threshold thin film saturable absorber device according to any one of claims 1-3, wherein the high damage threshold thin film saturable absorber device comprises a GaAs substrate, a GaAs/AlAs bragg emitter layer, an InGaAs/GaAs absorber layer, a 2D material relaxation layer, and a high reflection medium layer from bottom to top in sequence;
an InGaAs/GaAs absorption layer and a 2D material relaxation layer are embedded between a high-reflection dielectric layer and a GaAS/AlAs Bragg emission layer with extremely high reflectivity, so as to form the Fabry-Perot etalon.
5. A short-pulse solid-state laser for laser ranging, characterized in that the short-pulse solid-state laser for laser ranging uses the high damage threshold thin-film saturable absorber device according to claim 4.
6. A short-pulse solid-state laser for industrial processing, characterized in that the short-pulse solid-state laser for industrial processing uses the high damage threshold thin-film saturable absorber device according to claim 4.
7. A short-pulse solid-state laser for laser medical use, characterized in that the short-pulse solid-state laser for laser medical use uses the high-damage-threshold thin-film saturable absorber device according to claim 4.
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| CN110391583A (en) * | 2019-07-03 | 2019-10-29 | 浙江大学 | Saturable absorber and preparation method thereof based on non-stoichiometric transition metal oxide film |
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| CN1848561A (en) * | 2005-04-04 | 2006-10-18 | 中国科学院半导体研究所 | Semiconductor saturable absorption lens and producing method thereof |
| US8179943B2 (en) * | 2005-04-06 | 2012-05-15 | Reflekron Ltd. | Semiconductor saturable absorber reflector and method to fabricate thereof |
| JP2007316206A (en) * | 2006-05-24 | 2007-12-06 | Sony Corp | Semiconductor saturable absorber mirror, method of manufacturing semiconductor saturable absorber mirror, laser beam generator and laser beam applying system |
| CN104218443A (en) * | 2014-08-20 | 2014-12-17 | 鲍小志 | Two-dimensional stratified material based practical saturable absorber and production method thereof |
| WO2017214925A1 (en) * | 2016-06-16 | 2017-12-21 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method therefor, and pulse optical fibre laser |
| CN105896258A (en) * | 2016-06-16 | 2016-08-24 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser |
| CN110911958A (en) * | 2019-11-25 | 2020-03-24 | 上海交通大学 | Silicon-based passive mode-locked external cavity laser based on two-dimensional material saturable absorber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105428991A (en) * | 2015-12-16 | 2016-03-23 | 中国科学院西安光学精密机械研究所 | Absorption device for solid mode-locked laser and preparation method of absorption device |
| CN110391583A (en) * | 2019-07-03 | 2019-10-29 | 浙江大学 | Saturable absorber and preparation method thereof based on non-stoichiometric transition metal oxide film |
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