CN211629514U - X-shaped cavity pulse laser based on bismuth-doped gallium arsenide saturable absorber - Google Patents
X-shaped cavity pulse laser based on bismuth-doped gallium arsenide saturable absorber Download PDFInfo
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- CN211629514U CN211629514U CN201922073332.3U CN201922073332U CN211629514U CN 211629514 U CN211629514 U CN 211629514U CN 201922073332 U CN201922073332 U CN 201922073332U CN 211629514 U CN211629514 U CN 211629514U
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Abstract
The utility model discloses an X die cavity pulse laser based on mix bismuth gallium arsenide saturable absorber. The utility model discloses take semiconductor laser of tail fiber output to produce continuous light and incide Yb LSO crystal through coupling lens and concave surface input mirror in proper order, then after the gain of Yb LSO crystal, laser is reflected to the plane mirror by the concave surface mirror, is later reflected and returns according to the original route, and through Yb LSO crystal process once more, strengthen the light intensity, when laser reachs the concave surface incident mirror, is reflected and sees through bismuth-doped gallium arsenide saturable absorber, shoots to the output mirror after seeing through bismuth-doped gallium arsenide saturable absorber at last. The utility model discloses reduce output pulse's repetition frequency, improved the monopulse energy to obtain narrower mode locking pulse output.
Description
Technical Field
The utility model belongs to the technical field of laser technology and nonlinear optics thereof, concretely relates to X die cavity pulse laser based on mix bismuth gallium arsenide saturable absorber.
Background
GaAs is a common III-V semiconductor material with a direct band gap, has the advantages of high electron mobility, high temperature resistance, corrosion resistance, small dielectric constant and the like, and is widely applied to the photoelectric field of photoelectric devices and the like at present. GaAs as a passive Q-switch is also widely applied to all-solid-state lasers because of its advantages such as stable photochemical properties, good thermal conductivity, high temperature damage resistance, stable saturable absorption, no degradation, etc., but it is known that GaAs also has some disadvantages such as modulation depth not reaching one hundred percent. In order to make the Q-switching performance of GaAs more excellent and to expand its application range, pure GaAs has been improved. Doping GaAs with other elements is one of the improved methods commonly used in our days, and the alloys formed by doping tend to have some more excellent properties. GaAs grown in whatever manner is used1-xBixThe experimental detection proves that the bandwidth of GaAs is greatly reduced due to the doping of Bi, so that the GaAs1-xBixThe excellent performance of the material has attracted general attention, and in recent years, GaAs is used1-xBixThe study and application of the characteristics of materials are more endlessly developed. The doped Bi-doped gallium arsenide is still a direct bandgap semiconductor material, and the bandgap of the material is obviously reduced due to the doping of Bi, and recent research results generally believe that the bandgap of GaAs is reduced by about 85meV for every one percent of Bi. This also allows bismuth-doped gallium arsenide to be a saturable absorber with superior properties.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a X die cavity pulse laser based on mix bismuth gallium arsenide saturable absorber, but this kind of pulse laser utilizes the saturable absorption characteristic that mixes bismuth gallium arsenide has, can obtain high-energy transfer Q pulse laser, realizes nanosecond pulse output. Compared with gallium arsenide as a saturable absorber, the bismuth-doped gallium arsenide has better Q-switching effect, and the laser can generate narrower pulse, higher single pulse energy and higher peak power. Therefore, the secret doping is an effective method for improving the Q-switching effect of the gallium arsenide, and the Bi-doped gallium arsenide is a semiconductor saturable absorber with great potential.
The technical scheme of the utility model is that: an X-cavity pulse laser based on a bismuth-doped gallium arsenide saturable absorber comprises a semiconductor laser (1) with tail fiber output, a coupling lens (2), a first plano-concave mirror (3), a Yb: LSO crystal (4), a second concave mirror (5), a reflecting mirror (6), a bismuth-doped gallium arsenide saturable absorber (7) and an output mirror (8),
the first plano-concave mirror (3), the Yb LSO crystal (4), the second concave mirror (5), the reflector (6), the bismuth-doped gallium arsenide saturable absorber (7) and the output mirror (8) jointly form an X-type resonant cavity;
the semiconductor laser (1) generates continuous light which is emitted to the coupling lens (2), the continuous light is emitted to the plane of the first plano-concave mirror (3) after passing through the coupling lens (2), then is emitted to the Yb: LSO crystal (4) after passing through the plano-concave mirror (3), the continuous light is converted into pulse laser which is emitted to the concave surface of the second concave mirror (5) after being gained by the Yb: LSO crystal (4), the pulse laser is reflected by the second concave mirror (5) and is emitted to the reflecting mirror (6), the pulse laser is reflected by the reflecting mirror (6) and returns to the original path, the pulse laser passes through the Yb: LSO crystal (4) after being reflected by the concave surface of the second concave mirror (5), the pulse laser is enhanced in light intensity, is emitted by the Yb: LSO crystal (4), is emitted to the concave surface of the first plano mirror (3), and is reflected to the bismuth-doped saturable gallium arsenide (7) by the concave surface of the first plano mirror (3), the light passes through the bismuth-doped gallium arsenide saturable absorber (7) and then is emitted to the output mirror (8), and finally the mode-locked pulse laser is output by the output mirror (8).
Furthermore, the central wavelength of continuous light emitted by the semiconductor laser (1) is 978 nm.
Furthermore, the wave band of the mode-locked pulse laser output by the output mirror (8) is 1060 nm.
Furthermore, the plane of the first plano-concave mirror (3) faces the semiconductor laser (1), the coupling lens (2) is arranged between the semiconductor laser (1) and the first plano-concave mirror (3), a 978nm antireflection film and a 1060nm high reflection film are plated on the plane of the first plano-concave mirror (3), and a 978nm high reflection film is plated on the concave surface of the first plano-concave mirror.
Furthermore, one surface of the Yb: LSO crystal (4) facing the first concave mirror (3) is plated with a 978nm antireflection film and a 1060nm high-reflection film, and one surface facing the second concave mirror (5) is plated with a 1060nm antireflection film, so that the gain of 978nm continuous light to 1060nm pulse laser can be achieved by the Yb: LSO crystal (4).
Furthermore, the concave surface of the second concave mirror (5) is plated with a high reflection film of 1060 nm.
Furthermore, a 1060nm antireflection film is plated on one surface of the output mirror (8) facing the bismuth-doped gallium arsenide saturable absorber (7).
Furthermore, the transmittance of the 1060nm antireflection film plated on the output mirror (8) is 10%.
The utility model discloses beneficial effect who has: 1. compared with GaAs which is not doped with bismuth, the small signal transmittance is obviously reduced after doping. Under the same laser diode pumping condition, the output pulse repetition frequency of the bismuth-doped gallium arsenide Q-switched laser is reduced, the single pulse energy is increased, and meanwhile, narrower pulse output can be obtained; 2. the output power of the bismuth-doped gallium arsenide Q-switched laser changes faster and is higher; 3. the strongest absorption peak of the LSO crystal is positioned at 978nm, so the crystal is suitable for LD pumping, and the absorption intensity is increased along with the increase of the concentration of doped ions, which is favorable for improving the pumping efficiency; 4. compared with a common linear cavity passive Q-switched laser, the optimized cavity structure of the laser adopts an X-shaped cavity scheme, and pulse output is easier to realize.
Drawings
Fig. 1 is a schematic structural view of the present invention;
in the figure, 1 is a semiconductor laser; 2 is a coupling lens; 3 is a first plano-concave mirror; 4 is Yb: LSO crystal; 5 is a second concave mirror; 6 is a mirror; 7 is a bismuth-doped gallium arsenide saturable absorber; and 8 is an output mirror.
Detailed Description
The technical scheme of the utility model is explained in detail below with the examples and the attached drawings of the specification:
an X-cavity pulse laser based on a bismuth-doped gallium arsenide saturable absorber comprises a semiconductor laser (1) with tail fiber output, a coupling lens (2), a first plano-concave mirror (3), a Yb: LSO crystal (4), a second concave mirror (5), a reflecting mirror (6), a bismuth-doped gallium arsenide saturable absorber (7) and an output mirror (8),
the first plano-concave mirror (3), the Yb: LSO crystal (4), the second concave mirror (5), the reflector (6), the bismuth-doped gallium arsenide saturable absorber (7) and the output mirror (8) jointly form an X-type resonant cavity,
the semiconductor laser (1) generates continuous light which is emitted to the coupling lens (2), the continuous light is emitted to the plane of the first plano-concave mirror (3) after passing through the coupling lens (2), then is emitted to the Yb: LSO crystal (4) after passing through the plano-concave mirror (3), the continuous light is converted into pulse laser which is emitted to the concave surface of the second concave mirror (5) after being gained by the Yb: LSO crystal (4), the pulse laser is reflected by the second concave mirror (5) and is emitted to the reflecting mirror (6), the pulse laser is reflected by the reflecting mirror (6) and returns to the original path, the pulse laser passes through the Yb: LSO crystal (4) after being reflected by the concave surface of the second concave mirror (5), the pulse laser is enhanced in light intensity, is emitted by the Yb: LSO crystal (4), is emitted to the concave surface of the first plano mirror (3), and is reflected to the bismuth-doped saturable gallium arsenide (7) by the concave surface of the first plano mirror (3), the light passes through the bismuth-doped gallium arsenide saturable absorber (7) and then is emitted to the output mirror (8), and finally the mode-locked pulse laser is output by the output mirror (8).
Furthermore, the central wavelength of continuous light emitted by the semiconductor laser (1) is 978 nm.
Furthermore, the wave band of the mode-locked pulse laser output by the output mirror (8) is 1060 nm.
Furthermore, the plane of the first plano-concave mirror (3) faces the semiconductor laser (1), the coupling lens (2) is arranged between the semiconductor laser (1) and the first plano-concave mirror (3), a 978nm antireflection film and a 1060nm high reflection film are plated on the plane of the first plano-concave mirror (3), and a 978nm high reflection film is plated on the concave surface of the first plano-concave mirror.
Furthermore, one surface of the Yb: LSO crystal (4) facing the first concave mirror (3) is plated with a 978nm antireflection film and a 1060nm high-reflection film, and one surface facing the second concave mirror (5) is plated with a 1060nm antireflection film, so that the gain of 978nm continuous light to 1060nm pulse laser can be achieved by the Yb: LSO crystal (4).
Furthermore, the concave surface of the second concave mirror (5) is plated with a high reflection film of 1060 nm.
Furthermore, a 1060nm antireflection film is plated on one surface of the output mirror (8) facing the bismuth-doped gallium arsenide saturable absorber (7).
Furthermore, the transmittance of the 1060nm antireflection film plated on the output mirror (8) is 10%.
At present, gallium arsenide as a saturable absorber has been increasingly applied to passive Q-switching technology due to its great optical nonlinearity; the bismuth-doped gallium arsenide reserves the optical nonlinear advantage, the Q-switching effect is better, the laser can generate narrower pulse, higher single pulse energy and higher peak power, narrower pulse envelope and deeper modulation depth; meanwhile, Bi-doped gallium arsenide is still a direct bandgap semiconductor material, and the bandgap of the material is obviously reduced due to the secret doping, and recent research results generally believe that the bandgap of GaAs is reduced by about 85meV for every one percent of Bi; these characteristics indicate that the Bi-doped gallium arsenide is a very potential semiconductor saturable absorber.
The utility model discloses optical parametric oscillator's theory of operation is: 978nm continuous light generated by a semiconductor laser (1) with tail fiber output sequentially passes through a coupling lens (2) and a first plano-concave mirror (3) to be incident to a Yb: LSO crystal (4), gain laser passing through the Yb: LSO crystal (4) is reflected by a second concave mirror (5) to reach a reflecting mirror (6), then is reflected and returns in the original path to reach the first plano-concave mirror (3) for reflection, and reaches an output mirror (8) after passing through a bismuth-doped gallium arsenide saturable absorber (7) to output mode-locked pulse laser with 1060nm wave band
The work principle of the bismuth-doped gallium arsenide saturable absorber is that the absorption of the saturable absorber to laser in a cavity changes along with the intensity of an optical field, when the light intensity is weaker, the absorption to light is strong, the loss in the cavity is increased, and therefore the light transmittance is very low; along with the increase of the light intensity, the absorption of the bismuth-doped gallium arsenide on light is weakened, the loss in the cavity is reduced, when the light intensity exceeds a specific value, the absorption is saturated, the light transmittance can reach 100%, the light intensity obtains the maximum laser pulse and simultaneously receives the minimum loss, and the strong pulse laser is output.
Above only the utility model discloses an it is preferred embodiment, the utility model discloses a scope of protection not only limits in above-mentioned embodiment, and the all belongs to the utility model discloses a technical scheme under the thinking all belongs to the utility model discloses a scope of protection. It should be noted that, for those skilled in the art, a plurality of modifications and decorations without departing from the principle of the present invention should be considered as the protection scope of the present invention.
Claims (8)
1. An X-shaped cavity pulse laser based on a bismuth-doped gallium arsenide saturable absorber is characterized in that: comprises a semiconductor laser (1) with tail fiber output, a coupling lens (2), a first plano-concave mirror (3), an Yb: LSO crystal (4), a second concave mirror (5), a reflecting mirror (6), a bismuth-doped gallium arsenide saturable absorber (7) and an output mirror (8),
wherein the first plano-concave mirror (3), the Yb: LSO crystal (4), the second concave mirror (5), the reflector (6), the bismuth-doped gallium arsenide saturable absorber (7) and the output mirror (8) jointly form an X-type resonant cavity,
the semiconductor laser (1) generates continuous light which is emitted to the coupling lens (2), the continuous light is emitted to the plane of the first plano-concave mirror (3) after passing through the coupling lens (2), then is emitted to the Yb: LSO crystal (4) after passing through the plano-concave mirror (3), after being gained by the Yb: LSO crystal (4), the continuous light is converted into pulse laser which is emitted to the concave surface of the second concave mirror (5), the pulse laser is reflected by the second concave mirror (5) and is emitted to the reflecting mirror (6), the reflecting mirror (6) reflects the pulse laser and returns along the original path, the pulse laser passes through the Yb: LSO crystal (4) after being reflected by the concave surface of the second concave mirror (5), is emitted to the concave surface of the first plano-concave mirror (3) after passing through the Yb: LSO crystal (4), is reflected to the bismuth-doped saturable absorber (7) through the concave surface of the first plano-concave mirror (3), and is emitted to the bismuth-doped saturable gallium arsenide absorber (8) after passing through the bismuth-, finally, the mode-locked pulse laser is output by an output mirror (8).
2. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: the central wavelength of continuous light emitted by the semiconductor laser (1) is 978 nm.
3. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: the wave band of the mode-locked pulse laser output by the output mirror (8) is 1060 nm.
4. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: the plane of first plano-concave mirror (3) face semiconductor laser (1), coupling lens (2) locate semiconductor laser (1) and first plano-concave mirror (3) between, 978nm antireflection coating and 1060nm high reflection coating have been plated on the plane of first plano-concave mirror (3), have plated the high reflection coating of 978nm at its concave surface.
5. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: and one surface of the Yb/LSO crystal (4) facing the first concave mirror (3) is plated with a 978nm antireflection film and a 1060nm high-reflection film, and one surface facing the second concave mirror (5) is plated with a 1060nm antireflection film.
6. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: the concave surface of the second concave mirror (5) is plated with a 1060nm high-reflection film.
7. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: and a 1060nm antireflection film is plated on one surface of the output mirror (8) facing the bismuth-doped gallium arsenide saturable absorber (7).
8. The bismuth-doped gallium arsenide saturable absorber-based X-cavity pulsed laser of claim 1, wherein: the transmittance of the 1060nm antireflection film plated on the output mirror (8) is 10%.
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Effective date of registration: 20230814 Address after: Room 110-2, floor 1, building 4, No. 168, software Avenue, Yuhuatai District, Nanjing, Jiangsu 210012 Patentee after: Nanjing Daocheng Network Technology Co.,Ltd. Address before: 210044 No. 219 Ning six road, Jiangbei new district, Nanjing, Jiangsu Patentee before: Nanjing University of Information Science and Technology |
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