CN105048274A - Passive Q-switched pulse-type self-frequency doubling green light laser - Google Patents
Passive Q-switched pulse-type self-frequency doubling green light laser Download PDFInfo
- Publication number
- CN105048274A CN105048274A CN201510522002.1A CN201510522002A CN105048274A CN 105048274 A CN105048274 A CN 105048274A CN 201510522002 A CN201510522002 A CN 201510522002A CN 105048274 A CN105048274 A CN 105048274A
- Authority
- CN
- China
- Prior art keywords
- crystal
- laser
- light
- frequency doubling
- passive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims abstract description 127
- 238000005086 pumping Methods 0.000 claims abstract description 29
- 238000010521 absorption reaction Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 4
- 238000009738 saturating Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- KKGCEIJJOCAQEX-UHFFFAOYSA-N calcium niobium Chemical compound [Ca][Nb] KKGCEIJJOCAQEX-UHFFFAOYSA-N 0.000 description 1
- JLRVHARDDHTXMN-UHFFFAOYSA-N calcium tantalum Chemical compound [Ca][Ta] JLRVHARDDHTXMN-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000001616 ion spectroscopy Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Abstract
The invention relates to a passive Q-switched pulse-type self-frequency doubling green light laser. The laser comprises a semiconductor laser pumping source, a resonant-cavity incident mirror, a saturable absorption sheet, a self-frequency doubling laser crystal and a resonant cavity output mirror which are successively placed along an optical path. The self-frequency doubling laser crystal is an Nd: CNGS crystal or an Nd: CTGS crystal. A light passing direction length of the Nd: CNGS crystal or the Nd: CTGS crystal is (0.1-100) mm. A cutting direction is a direction along a 1064nm frequency doubling phase matching direction. Neodymium ion dosage concentration is (o.1-30) at. %. The two kinds of crystals simultaneously possess laser emission and nonlinear optical effects and a stimulated emission cross section is moderate. One self-frequency doubling laser crystal is used to replace a laser crystal and a non-linear crystal. A size of a made laser is small, the structure is compact and production cost is greatly reduced. Simultaneously, processing and assembling links are simplified and production efficiency is increased.
Description
Technical field
The present invention relates to a kind of passive Q-adjusted pulsed from frequency doubling green light laser, belong to laser technology field.
Background technology
Passive Q-adjusted is the important technology obtaining macro-energy, narrow spaces, high-peak power laser pulse.The passive Q-adjusted green (light) laser of LD pumping has important application in nonlinear optics, micrurgy, pollution detection and ion spectroscopy.At present, the common practice that people obtain such light source first produces near-infrared Solid State Laser (as 1064nm) with laser crystal, realize passive Q regulation pulse laser operation with saturable absorber again, then realize pulse green glow with nonlinear optical crystal in the mode of intracavity frequency doubling, cavity external frequency multiplication or Compound Cavity frequency multiplication and export.The optical element that this laser relates to is many, complex structure, and cost is high.If Laser emission and frequency doubling non-linear's two kinds of light functions can be united two into one, then production cost can be made greatly to reduce, be conducive to the simplification of laser structure and the reduction of volume simultaneously, this material people are called self-frequency-doubling crystal.Up to the present, the self-frequency-doubling crystal that it is found that has Nd:MgO:LiNbO
3, Nd:YCOB, Nd:GdCOB, NYAB etc., although all achieve good result continuous from these materials of frequency multiplication output facet, the pulse for high-peak power exports from frequency multiplication, and these crystal all exist different remarkable defects, as Nd:MgO:LiNbO
3anti-light injury threshold lower and there is photorefractive effect, the laser stimulated emission cross section of Nd:YCOB and Nd:GdCOB is less, cannot realize passive Q-adjusted output, and comprise YAB [YAl (BO in NYAB
3)
4] and NAB [NdAl (BO
3)
4] two kinds of lattice structures, optical homogeneity is poor, is difficult to obtain the NYAB of high optical quality.Therefore, people do not find that the pulse really with practical value is from double-frequency material, particularly for the situation of semiconductor laser pumping yet so far.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of passive Q-adjusted pulsed from frequency doubling green light laser.
Terminological interpretation:
1.LD, the abbreviation of semiconductor laser;
2.Nd:CNGS, the abbreviation of neodymium-doped gallium silicate niobium calcium;
3.Nd:CTGS, the abbreviation of neodymium-doped gallium silicate tantalum calcium;
4.Cr:YAG, mixes the abbreviation of chromium yttrium-aluminium-garnet.
Technical scheme of the present invention is as follows:
A kind of passive Q-adjusted pulsed is from frequency doubling green light laser, comprise from left to right successively along the semiconductor laser pumping source that light path is laid, the incident mirror of resonant cavity, saturable absorption sheet, self-frequency doubling laser crystal and resonant cavity outgoing mirror, described self-frequency doubling laser crystal is Nd:CNGS crystal or Nd:CTGS crystal, the optical direction length of described Nd:CNGS crystal or described Nd:CTGS crystal is (0.1-100) mm, the cut direction of described Nd:CNGS crystal or described Nd:CTGS crystal is along 1064nm multiple frequency phase matching direction, the neodymium ion doped concentration of described Nd:CNGS crystal or described Nd:CTGS crystal is (0.1 – 30) at.%.
Design advantage is herein, the present invention adopts the Nd:CNGS crystal of Czochralski grown or Nd:CTGS crystal as self-frequency doubling laser crystal, these two kinds of crystal have fast growth, optical quality is good, size is large, optic damage threshold value advantages of higher, and, these two kinds of crystal have Laser emission and nonlinear optical effect simultaneously, stimulated emission cross section is moderate, between Nd:YCOB and NYAB, enough strong Laser emission can be provided for passive Q-adjusted, maintain again splendid energy storage capability, its fluorescence lifetime is up to 256 microseconds, be conducive to obtaining high-energy, the pulse self-frequency-doubling laser of high-peak power exports, combination property is very excellent.The passive Q-adjusted performance (pulse energy, peak power) of the pulse self-frequency-doubling laser LD pumping of these two kinds of crystal is better than all self-frequency-doubling crystals found in the past; In addition, the present invention adopts one piece of self-frequency doubling laser crystal to substitute laser crystal and nonlinear crystal two pieces of crystal, and the laser volume be made up of it is less, structure is compacter, production cost reduces greatly, also simplify processing and assembling link simultaneously, improves production efficiency.
Passive Q-adjusted pulsed of the present invention from the course of work of frequency doubling green light laser is: pumping laser is launched in semiconductor laser pumping source, pumping laser is successively by the incident mirror of described resonant cavity, described saturable absorber, enter described self-frequency doubling laser crystal, i.e. described Nd:CNGS crystal or described Nd:CTGS crystal, self-frequency-doubling crystal produces the near-infrared laser of 1064nm, realize under the effect of saturable absorption sheet passive Q-adjusted (namely changing impulse wave into by continuous wave), the pulse green glow of 532nm is produced again through the frequency doubling non-linear of self-frequency-doubling crystal, by outside the output cavity of resonant cavity outgoing mirror one end.
Preferred according to the present invention, described passive Q-adjusted pulsed also comprises focusing system from frequency doubling green light laser, described focusing system is placed between described semiconductor laser pumping source and the incident mirror of described resonant cavity, and described self-frequency doubling laser crystal is placed on the focal length of described focusing system.
The advantage herein designed is, improves the pattern matching degree of pumping laser and resonant cavity laser.
Preferred according to the present invention, the optical direction length of described Nd:CNGS crystal or described Nd:CTGS crystal is (5-20) mm; Described Nd:CNGS crystal or described Nd:CTGS crystal are cuboid or column; The neodymium ion doped concentration of described Nd:CNGS crystal or described Nd:CTGS crystal is (0.1 – 2) at.%.
Preferred according to the present invention, the cutting angle of the I type-Ⅱphase matching of described Nd:CNGS crystal is (θ, φ), wherein, the span of θ is 31.6 °-41.6 °, and the span of φ is 25.0 °-35.0 °, the cutting angle of the II type-Ⅱphase matching of described Nd:CNGS crystal is (θ 1, φ 1), the span of θ 1 is 51.5 °-61.5 °, and the span of φ 1 is-5 °-5 °; The cutting angle of the I type-Ⅱphase matching of described Nd:CTGS crystal is (θ 2, φ 2), the span of θ 2 is 33.7 °-43.7 °, the span of φ 2 is 25.0 °-35.0 °, the cutting angle of the II type-Ⅱphase matching of described Nd:CTGS crystal is (θ 3, φ 3), wherein, the span of θ 3 is 56.1 °-66.1 °, and the span of φ 3 is (-5) °-5 °.
Preferred according to the present invention, the incident mirror of described resonant cavity is plated on described saturable absorption sheet, on the left of described saturable absorption sheet, logical light end face is coated with high thoroughly to (798-818) nm light, to 1064nm light and the high anti-deielectric-coating of 532nm light, on the right side of described saturable absorption sheet, logical light end face is coated with the anti-reflection film of (798-818) nm, 1064nm.
The advantage herein designed is, be beneficial to passive Q-adjusted through, basic frequency laser of pumping laser, and double-frequency laser is in the output of resonant cavity output.
Preferred according to the present invention, described resonant cavity outgoing mirror is plated on described self-frequency doubling laser crystal, the left side of described self-frequency doubling laser crystal leads on light end face and is coated with (798-818) nm, 1064nm, 532nm anti-reflection film, and the right side of described self-frequency doubling laser crystal leads on light end face and is coated with (798-818) nm light and high anti-, the 532nm anti-reflection film of 1064nm light.
The advantage herein designed is, is beneficial to the absorption of pumping laser, and vibration and passive Q-adjusted in the chamber of basic frequency laser, and double-frequency laser is in the output of resonant cavity output.
Preferred according to the present invention, be coated with (798-818) nm, 1064nm, 532nm anti-reflection film after two logical light end faces polishing of described Nd:CNGS crystal or described Nd:CTGS crystal.
Preferred according to the present invention, the both ends of the surface of described saturable absorption sheet are all coated with (798-818) nm, 1064nm anti-reflection film.
The advantage herein designed is, be beneficial to pumping laser through with passive Q-adjusted realization.
Preferred according to the present invention, centered by described semiconductor laser pumping source, wavelength is direct output semiconductor laser or the coupling fiber output semiconductor laser of (798-818) nm; The incident mirror of described resonant cavity be coated with high thoroughly to (798-818) nm light, to 1064nm light and the high anti-deielectric-coating of 532nm light; Described resonant cavity outgoing mirror is coated with (798-818) nm light and high anti-, saturating to the 532nm light height deielectric-coating of 1064nm light; Described saturable absorption sheet is Cr:YAG crystal, GaAs semiconductor, Graphene, MoS
2, WS
2in any one.
The advantage herein designed is, is beneficial to the output at resonant cavity output of the vibration through, basic frequency laser of pumping laser and double-frequency laser.
Beneficial effect of the present invention is:
1, compact conformation.Self-frequency doubling laser crystal of the present invention is Nd:CNGS crystal or Nd:CTGS crystal, and self-frequency-doubling crystal is along the cutting of phase matched direction, and play laser and additive mixing two kinds of functions, make laser volume by it less, structure is compacter simultaneously.
2, cost is low.The present invention adopts one piece of self-frequency doubling laser crystal to substitute laser crystal and nonlinear crystal two pieces of crystal, and production cost reduces greatly, also simplify processing and assembling link simultaneously, improves production efficiency.
3, easily promote.Nd:CNGS crystal and Nd:CTGS crystal are Czochralski grown, easy to prepare, growth cycle is short, crystal optics quality is good, easily obtain block monocrystalline substantially, and optic damage threshold value is high, energy storage ability large, and the passive Q-adjusted of its semiconductor laser pumping source is better than all self-frequency-doubling crystals in the past from frequency doubling property, has broad prospect of application.
Accompanying drawing explanation
Fig. 1 is for pulsed passive Q-adjusted described in the embodiment of the present invention 1 is from the structural representation of frequency doubling green light laser;
Fig. 2 is for pulsed passive Q-adjusted described in the embodiment of the present invention 2 is from the structural representation of frequency doubling green light laser;
The pulse train that Fig. 3 produces from frequency doubling green light laser for the passive Q-adjusted pulsed described in embodiment 2 and single pulse width schematic diagram;
The self-frequency-doubling laser spectrum schematic diagram of the output that Fig. 4 produces from frequency doubling green light laser for the passive Q-adjusted pulsed described in embodiment 2;
Fig. 5 is for pulsed passive Q-adjusted described in the embodiment of the present invention 3 is from the structural representation of frequency doubling green light laser;
Fig. 6 is for pulsed passive Q-adjusted described in the embodiment of the present invention 4 is from the structural representation of frequency doubling green light laser;
Fig. 7 is for pulsed passive Q-adjusted described in the embodiment of the present invention 5 is from the structural representation of frequency doubling green light laser;
Wherein, 1, semiconductor laser pumping source, 2, focusing system., 3, the incident mirror of resonant cavity, 4, saturable absorption sheet, 5, self-frequency doubling laser crystal, 6, resonant cavity outgoing mirror.
Embodiment
Below in conjunction with Figure of description and embodiment, the present invention is further qualified, but is not limited thereto.
Embodiment 1
A kind of passive Q-adjusted pulsed is from frequency doubling green light laser, comprise lay along light path successively semiconductor laser pumping source 1, resonant cavity incident mirror 3, saturable absorption sheet 4, self-frequency doubling laser crystal 5 and resonant cavity outgoing mirror 6, described self-frequency doubling laser crystal 5 is Nd:CNGS crystal, the cut direction of described Nd:CNGS crystal is along 1064nm multiple frequency phase matching direction, and the neodymium ion doped concentration of described Nd:CNGS crystal is 0.5at.%.
The cutting angle of the I type-Ⅱphase matching of described Nd:CNGS crystal is (θ, φ), wherein, the value of θ is 36.6 °, and the value of φ is 30.0 °, and the cutting angle of the II type-Ⅱphase matching of described Nd:CNGS crystal is (θ 1, φ 1), wherein, the value of θ 1 is 56.5 °, and the value of φ 1 is 0 °.
Centered by described semiconductor laser pumping source 1, wavelength is the direct output semiconductor laser of 808nm.
The incident mirror 3 of described resonant cavity is plated on described saturable absorption sheet 4, on the left of described saturable absorption sheet 4, logical light end face is coated with high thoroughly to (798-818) nm light, to 1064nm light and the high anti-deielectric-coating of 532nm light, on the right side of described saturable absorption sheet 4, logical light end face is coated with the anti-reflection film of (798-818) nm, 1064nm.
Described resonant cavity outgoing mirror 6 is plated on described self-frequency doubling laser crystal 5, the left side of described self-frequency doubling laser crystal 5 leads on light end face and is coated with (798-818) nm, 1064nm, 532nm anti-reflection film, and the right side of described self-frequency doubling laser crystal 5 leads on light end face and is coated with (798-818) nm light and high anti-, the 532nm anti-reflection film of 1064nm light.
Described saturable absorption sheet 4 for transmitance be the Cr:YAG crystal of 94%, thickness is 0.7mm.
Passive Q-adjusted pulsed described in the present embodiment from the structure of frequency doubling green light laser as shown in Figure 1.
Embodiment 2
A kind of passive Q-adjusted pulsed according to embodiment 1 is from frequency doubling green light laser, its difference is, described self-frequency doubling laser crystal 5 is Nd:CTGS crystal, the optical direction length of described Nd:CTGS crystal is 13mm, the cut direction of described Nd:CTGS crystal is along 1064nm multiple frequency phase matching direction, and the neodymium ion doped concentration of described Nd:CTGS crystal is 0.5at.%.
The cutting angle of the I type-Ⅱphase matching of described Nd:CTGS crystal is (θ 2, φ 2), wherein, the value of θ 2 is 38.7 °, and the span of φ 2 is 30.0 °, and the cutting angle of the II type-Ⅱphase matching of described Nd:CTGS crystal is (θ 3, φ 3), wherein, the span of θ 3 is 61.1 °, and the span of φ 3 is 0 °.
Embodiment 3
A kind of passive Q-adjusted pulsed according to embodiment 1 or 2 is from frequency doubling green light laser, its difference is, described passive Q-adjusted pulsed also comprises focusing system 2 from frequency doubling green light laser, described focusing system 2 is placed between described semiconductor laser pumping source 1 and the incident mirror 3 of described resonant cavity, and described self-frequency doubling laser crystal 5 is placed on the focal length of described focusing system 2.
The incident mirror 3 of described resonant cavity independently is laid with described saturable absorption sheet 4, the incident mirror 3 of described resonant cavity be coated with high thoroughly to 808nm light, to 1064nm light and the anti-deielectric-coating of 532nm light height.The both ends of the surface of described saturable absorption sheet 4 are all coated with 808nm, 1064nm anti-reflection film.
Described resonant cavity outgoing mirror 6 is independently laid with described self-frequency doubling laser crystal 5, and described resonant cavity outgoing mirror 6 is coated with (798-818) nm light and high anti-, saturating to the 532nm light height deielectric-coating of 1064nm light.808nm, 1064nm, 532nm anti-reflection film is coated with after the polishing of described self-frequency doubling laser crystal 5 two logical light end faces;
Passive Q-adjusted pulsed described in the present embodiment from the structure of frequency doubling green light laser as shown in Figure 2.
When the power in semiconductor laser pumping source 1 is 3W, obtain exporting from frequency doubling green light of 9.7mW, repetition rate and single pulse width are respectively 1.43kHz, 14.2ns, the corresponding single pulse energy of 6.8 μ J and the peak power of 480W, this is up to the present single pulse energy and the highest LD pumping of peak power is passive Q-adjusted exports from frequency multiplication, relative to pumping laser, peak power improves 240 times.
The pulse train that Fig. 3 produces from frequency doubling green light laser for the passive Q-adjusted pulsed described in the present embodiment and single pulse width schematic diagram;
The self-frequency-doubling laser spectrum schematic diagram of the output that Fig. 4 produces from frequency doubling green light laser for the passive Q-adjusted pulsed described in the present embodiment;
Embodiment 4
A kind of passive Q-adjusted pulsed according to embodiment 1 or 2 is from frequency doubling green light laser, its difference is, described passive Q-adjusted pulsed also comprises focusing system 2 from frequency doubling green light laser, described focusing system 2 is placed between described semiconductor laser pumping source 1 and the incident mirror 3 of described resonant cavity, and described self-frequency doubling laser crystal 5 is placed on the focal length of described focusing system 2.
Described resonant cavity outgoing mirror 6 is independently laid with described self-frequency doubling laser crystal 5, and described resonant cavity outgoing mirror 6 is coated with (798-818) nm light and high anti-, saturating to the 532nm light height deielectric-coating of 1064nm light.808nm, 1064nm, 532nm anti-reflection film is coated with after the polishing of described self-frequency doubling laser crystal 5 two logical light end faces;
Passive Q-adjusted pulsed described in the present embodiment from the structure of frequency doubling green light laser as shown in Figure 5.
Embodiment 5
A kind of passive Q-adjusted pulsed according to embodiment 1 or 2 is from frequency doubling green light laser, its difference is, described passive Q-adjusted pulsed also comprises focusing system 2 from frequency doubling green light laser, described focusing system 2 is placed between described semiconductor laser pumping source 1 and the incident mirror 3 of described resonant cavity, and described self-frequency doubling laser crystal 5 is placed on the focal length of described focusing system 2.
The incident mirror 3 of described resonant cavity independently is laid with described saturable absorption sheet 4, the incident mirror 3 of described resonant cavity be coated with high thoroughly to 808nm light, to 1064nm light and the anti-deielectric-coating of 532nm light height.The both ends of the surface of described saturable absorption sheet 4 are all coated with 808nm, 1064nm anti-reflection film.
Passive Q-adjusted pulsed described in the present embodiment from the structure of frequency doubling green light laser as shown in Figure 6.
Embodiment 6
A kind of passive Q-adjusted pulsed according to embodiment 1 or 2 is from frequency doubling green light laser, its difference is, described passive Q-adjusted pulsed also comprises focusing system 2 from frequency doubling green light laser, described focusing system 2 is placed between described semiconductor laser pumping source 1 and the incident mirror 3 of described resonant cavity, and described self-frequency doubling laser crystal 5 is placed on the focal length of described focusing system 2.
Passive Q-adjusted pulsed described in the present embodiment from the structure of frequency doubling green light laser as shown in Figure 7.
Claims (10)
1. a passive Q-adjusted pulsed is from frequency doubling green light laser, comprise from left to right successively along the semiconductor laser pumping source that light path is laid, the incident mirror of resonant cavity, saturable absorption sheet, self-frequency doubling laser crystal and resonant cavity outgoing mirror, it is characterized in that, described self-frequency doubling laser crystal is Nd:CNGS crystal or Nd:CTGS crystal, the optical direction length of described Nd:CNGS crystal or described Nd:CTGS crystal is (0.1-100) mm, the cut direction of described Nd:CNGS crystal or described Nd:CTGS crystal is along 1064nm multiple frequency phase matching direction, the neodymium ion doped concentration of described Nd:CNGS crystal or described Nd:CTGS crystal is (0.1 – 30) at.%.
2. a kind of passive Q-adjusted pulsed according to claim 1 is from frequency doubling green light laser, it is characterized in that, described passive Q-adjusted pulsed also comprises focusing system from frequency doubling green light laser, described focusing system is placed between described semiconductor laser pumping source and the incident mirror of described resonant cavity, and described self-frequency doubling laser crystal is placed on the focal length of described focusing system.
3. a kind of passive Q-adjusted pulsed according to claim 1 and 2 is from frequency doubling green light laser, it is characterized in that, the optical direction length of described Nd:CNGS crystal or described Nd:CTGS crystal is (5-20) mm; Described Nd:CNGS crystal or described Nd:CTGS crystal are cuboid or column; The neodymium ion doped concentration of described Nd:CNGS crystal or described Nd:CTGS crystal is (0.1 – 2) at.%.
4. a kind of passive Q-adjusted pulsed according to claim 1 and 2 is from frequency doubling green light laser, it is characterized in that, the cutting angle of the I type-Ⅱphase matching of described Nd:CNGS crystal is (θ, φ), wherein, the span of θ is 31.6 °-41.6 °, the span of φ is 25.0 °-35.0 °, the cutting angle of the II type-Ⅱphase matching of described Nd:CNGS crystal is (θ 1, φ 1), wherein, the span of θ 1 is 51.5 °-61.5 °, and the span of φ 1 is-5 °-5 °; The cutting angle of the I type-Ⅱphase matching of described Nd:CTGS crystal is (θ 2, φ 2), the span of θ 2 is 33.7 °-43.7 °, the span of φ 2 is 25.0 °-35.0 °, the cutting angle of the II type-Ⅱphase matching of described Nd:CTGS crystal is (θ 3, φ 3), the span of θ 3 is 56.1 °-66.1 °, and the span of φ 3 is (-5) °-5 °.
5. a kind of passive Q-adjusted pulsed according to claim 1 and 2 is from frequency doubling green light laser, it is characterized in that, the incident mirror of described resonant cavity is plated on described saturable absorption sheet, on the left of described saturable absorption sheet, logical light end face is coated with high thoroughly to (798-818) nm light, to 1064nm light and the high anti-deielectric-coating of 532nm light, on the right side of described saturable absorption sheet, logical light end face is coated with the anti-reflection film of (798-818) nm, 1064nm; Described resonant cavity outgoing mirror is plated on described self-frequency doubling laser crystal, the left side of described self-frequency doubling laser crystal leads on light end face and is coated with (798-818) nm, 1064nm, 532nm anti-reflection film, and the right side of described self-frequency doubling laser crystal leads on light end face and is coated with (798-818) nm light and high anti-, the 532nm anti-reflection film of 1064nm light.
6. a kind of passive Q-adjusted pulsed according to claim 2 is from frequency doubling green light laser, it is characterized in that, the incident mirror of described resonant cavity is plated on described saturable absorption sheet, on the left of described saturable absorption sheet, logical light end face is coated with high thoroughly to (798-818) nm light, to 1064nm light and the high anti-deielectric-coating of 532nm light, on the right side of described saturable absorption sheet, logical light end face is coated with the anti-reflection film of (798-818) nm, 1064nm.
7. a kind of passive Q-adjusted pulsed according to claim 2 is from frequency doubling green light laser, it is characterized in that, described resonant cavity outgoing mirror is plated on described self-frequency doubling laser crystal, the left side of described self-frequency doubling laser crystal leads on light end face and is coated with (798-818) nm, 1064nm, 532nm anti-reflection film, and the right side of described self-frequency doubling laser crystal leads on light end face and is coated with (798-818) nm light and high anti-, the 532nm anti-reflection film of 1064nm light.
8. a kind of passive Q-adjusted pulsed according to claim 2 or 6 is from frequency doubling green light laser, it is characterized in that, after two logical light end faces polishing of described Nd:CNGS crystal or described Nd:CTGS crystal, be coated with (798-818) nm, 1064nm, 532nm anti-reflection film.
9. a kind of passive Q-adjusted pulsed according to claim 2 or 7, from frequency doubling green light laser, is characterized in that, the both ends of the surface of described saturable absorption sheet are all coated with (798-818) nm, 1064nm anti-reflection film.
10. a kind of passive Q-adjusted pulsed according to claim 1 and 2 is from frequency doubling green light laser, it is characterized in that, centered by described semiconductor laser pumping source, wavelength is direct output semiconductor laser or the coupling fiber output semiconductor laser of (798-818) nm; The incident mirror of described resonant cavity be coated with high thoroughly to (798-818) nm light, to 1064nm light and the high anti-deielectric-coating of 532nm light; Described resonant cavity outgoing mirror is coated with (798-818) nm light and high anti-, saturating to the 532nm light height deielectric-coating of 1064nm light; Described saturable absorption sheet is Cr:YAG crystal, GaAs semiconductor, Graphene, MoS
2, WS
2in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510522002.1A CN105048274B (en) | 2015-08-24 | 2015-08-24 | A kind of passive Q-adjusted pulsed is from frequency doubling green light laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510522002.1A CN105048274B (en) | 2015-08-24 | 2015-08-24 | A kind of passive Q-adjusted pulsed is from frequency doubling green light laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105048274A true CN105048274A (en) | 2015-11-11 |
| CN105048274B CN105048274B (en) | 2018-07-06 |
Family
ID=54454607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510522002.1A Active CN105048274B (en) | 2015-08-24 | 2015-08-24 | A kind of passive Q-adjusted pulsed is from frequency doubling green light laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105048274B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655862A (en) * | 2016-04-20 | 2016-06-08 | 福建福晶科技股份有限公司 | F-P electro-optic Q-switching frequency-doubled laser |
| CN111555107A (en) * | 2020-05-15 | 2020-08-18 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
| CN112290367A (en) * | 2020-10-29 | 2021-01-29 | 北京理工大学 | Novel frequency-doubling complex transverse mode output micro laser device capable of directly generating pulse Q modulation |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| JPH11243247A (en) * | 1997-11-18 | 1999-09-07 | Commiss Energ Atom | Lanthanum magnesium aluminate(lma) single-crystal layer, growth process based on liquid phase epitaxial growth thereof, and optical part containing the single-crystal layer |
| US20030031215A1 (en) * | 2001-08-10 | 2003-02-13 | Kane Thomas J. | Compound light source employing passive Q-switching and nonlinear frequency conversion |
| CN104503183A (en) * | 2014-12-10 | 2015-04-08 | 天津大学 | Self-frequency-conversion terahertz parametric oscillator |
| CN104659648A (en) * | 2013-11-25 | 2015-05-27 | 中国科学院物理研究所 | Neodymium-doped langasite self-frequency-doubling ultra-short pulse laser |
| CN204885812U (en) * | 2015-08-24 | 2015-12-16 | 山东大学 | Pulsed of transferring Q passively is from doubling of frequency green laser |
-
2015
- 2015-08-24 CN CN201510522002.1A patent/CN105048274B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| JPH11243247A (en) * | 1997-11-18 | 1999-09-07 | Commiss Energ Atom | Lanthanum magnesium aluminate(lma) single-crystal layer, growth process based on liquid phase epitaxial growth thereof, and optical part containing the single-crystal layer |
| US20030031215A1 (en) * | 2001-08-10 | 2003-02-13 | Kane Thomas J. | Compound light source employing passive Q-switching and nonlinear frequency conversion |
| CN104659648A (en) * | 2013-11-25 | 2015-05-27 | 中国科学院物理研究所 | Neodymium-doped langasite self-frequency-doubling ultra-short pulse laser |
| CN104503183A (en) * | 2014-12-10 | 2015-04-08 | 天津大学 | Self-frequency-conversion terahertz parametric oscillator |
| CN204885812U (en) * | 2015-08-24 | 2015-12-16 | 山东大学 | Pulsed of transferring Q passively is from doubling of frequency green laser |
Non-Patent Citations (2)
| Title |
|---|
| FEIFEI CHEN ET AL.: "Crystal growth and characterization of CTGS and Nd:CTGS for self-frequency-doubling applications", 《CRYSTENGCOMM》 * |
| 张栩朝 等: "Nd:CNGS晶体的生长及性能研究", 《第十七届全国晶体生长与材料学术会议摘要集》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655862A (en) * | 2016-04-20 | 2016-06-08 | 福建福晶科技股份有限公司 | F-P electro-optic Q-switching frequency-doubled laser |
| CN105655862B (en) * | 2016-04-20 | 2019-01-11 | 福建福晶科技股份有限公司 | A kind of electric-optically Q-switched double-frequency laser of F-P |
| CN111555107A (en) * | 2020-05-15 | 2020-08-18 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
| CN111555107B (en) * | 2020-05-15 | 2021-07-23 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
| CN112290367A (en) * | 2020-10-29 | 2021-01-29 | 北京理工大学 | Novel frequency-doubling complex transverse mode output micro laser device capable of directly generating pulse Q modulation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105048274B (en) | 2018-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Malyarevich et al. | V: YAG-a new passive Q-switch for diode-pumped solid-state lasers. | |
| CN101414729B (en) | Self-mode-locking laser | |
| CN204885812U (en) | Pulsed of transferring Q passively is from doubling of frequency green laser | |
| Yao et al. | Passively mode-locked Tm, Ho: YVO 4 laser based on a semiconductor saturable absorber mirror | |
| CN105071217A (en) | Self-frequency-doubling all-solid-state yellow-light laser | |
| CN105048274A (en) | Passive Q-switched pulse-type self-frequency doubling green light laser | |
| Chen | Passive Q-switching of an intracavity frequency doubled diode-pumped Nd: YVO/sub 4//KTP green laser with Cr/sup 4+: YAG | |
| CN204290030U (en) | A kind of two waveband multi-wavelength infrared light parametric oscillator | |
| CN102097737A (en) | High pulse repetition frequency ultra-short pulse laser method | |
| CN202276060U (en) | Self-Raman frequency conversion self-locking mode solid laser | |
| CN102299469A (en) | Laser for realizing subnanosecond Q-modulated output by controlling pump light characteristic | |
| CN105140775A (en) | 1.2 micron wavelength all-solid-state Raman laser | |
| CN112186478A (en) | Laser with adjustable power proportion and pulse interval and method | |
| CN106785878A (en) | Cr4+Passive Q-adjusted neodymium-doped potassium-gadolinium intracavity 1570nmOPO lasers | |
| CN111555107B (en) | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser | |
| CN201766283U (en) | Passive Q-switching testing facility for semi-conductor pump solid lasers | |
| CN107706733A (en) | A kind of method for producing subnanosecond pulse laser | |
| CN213278684U (en) | Laser with adjustable power proportion and pulse interval | |
| CN209358057U (en) | A kind of solid dual laser for adjusting Q | |
| CN103001113A (en) | 473nm electro-optic q-switch laser | |
| CN102522691A (en) | Neodymium-doped continuous ultraviolet laser adopting linear cavity | |
| CN101834403A (en) | Tunable solid laser adopting double-doped non-linear laser crystal | |
| CN102856786A (en) | Green laser based on calcium oxide borate salt crystal | |
| CN204992239U (en) | All solid state intracavity doubled single frequency laser of compact | |
| CN204651677U (en) | A kind of high-power all-solid-state laser of compact conformation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240328 Address after: 518083 Smart Valley Innovation Plaza 301-A1, No. 542 Minzhi Avenue, Xinniu Community, Minzhi Street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Youwei Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: No. 27, mountain Dana Road, Ji'nan City, Shandong, Shandong Patentee before: SHANDONG University Country or region before: China |