CN202276060U - Self-Raman frequency conversion self-locking mode solid laser - Google Patents
Self-Raman frequency conversion self-locking mode solid laser Download PDFInfo
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- CN202276060U CN202276060U CN2011201751762U CN201120175176U CN202276060U CN 202276060 U CN202276060 U CN 202276060U CN 2011201751762 U CN2011201751762 U CN 2011201751762U CN 201120175176 U CN201120175176 U CN 201120175176U CN 202276060 U CN202276060 U CN 202276060U
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Abstract
The utility model is suitable to the technical field of laser design, and provides a self-Raman frequency conversion self-locking mode solid laser using a vanadate crystal mixed with a rare earth ion as a laser gain medium, comprising a pumping source and a resonant cavity, wherein inside the resonant cavity there is provided the laser gain medium, the laser gain medium is the vanadate crystal mixed with the rare earth ion, and the front and rear light pass surfaces of the laser gain medium are not vertical to a laser light path. The fundamental frequency laser generated by the laser medium oscillates in the resonant cavity, and simultaneously due to the simulated Raman scattering and self-locking mode characteristic of the fundamental frequency laser, the fundamental frequency laser is converted into a first-order Stokes ultra-short pulse Raman laser. The self-Raman frequency conversion self-locking mode solid laser is simple and compact in structure, is high in efficiency and laser beam quality, stable and reliable in performance, and high in cost performance, and can be used for a seed source of a ultra-short pulse laser amplifier and for ultra-short pulse lasers of other wavelengths which generate yellow light.
Description
Technical field
The utility model belongs to the laser design technical field, relates in particular to a kind of solid state laser and resonant cavity thereof.
Background technology
Solid state laser is meant that it is widely used in fields such as military affairs, processing, medical treatment and scientific research with the laser of solid laser material as the resonant cavity operation material.
And as an important branch of laser and non-linear optical field, the optical frequency conversion The Application of Technology makes the output laser spectroscopy of laser obtain efficient extn, thereby has further widened the application of laser.Wherein, (Stimulate Raman Scattering, SRS) technology is owing to efficient height, can improve beam quality, need not advantage such as phase matched and obtained high concern for the stimulated Raman scattering of Raman medium.Laser spectroscopy after the Raman medium looses look spreads all over ultraviolet ray near infrared ray, has widened the scope of laser spectroscopy.
For this reason; The solid state laser that prior art provides has adopted Raman crystal as the Raman medium; Make solid state laser owing to advantages such as compact conformation, efficient height, good stabilities, and be widely used in fields such as information, traffic, measurement, medical treatment, national defence and industrial or agricultural more.Yet; Though the employing that prior art provides the solid state laser of Raman crystal widened the scope of the spectrum of laser output laser; But can't produce the laser field, that have ultrashort pulse such as being mainly used in ultra high-speed optical communication, magnanimity information storage, photosynthesis research, chemical reaction process, application is limited.
The utility model content
The purpose of the utility model is to provide a kind of solid state laser, be intended to solve employing that prior art provides the solid state laser of Raman crystal can't produce laser, the problem that application is limited with ultrashort pulse.
The utility model is achieved in that a kind of from Raman frequency conversion self mode locking solid state laser, comprising: the pumping source resonant cavity, have gain medium in the said resonant cavity, and said gain medium is rare-earth-ion-doped vanadate crystal; The logical light face of former and later two of said gain medium is not orthogonal to laser optical path.
Further, said resonant cavity comprises a pumping end chamber mirror and an outgoing mirror; Said pumping end chamber mirror is to the high transmission of pump light, to fundamental frequency light and the high reflection of single order stokes light, and said outgoing mirror reflects, the single order stokes light is had transmitance fundamental frequency light height.
Further, said resonant cavity is straight chamber, three mirror refrative cavities, Z type refrative cavity or X type refrative cavity.
Further, said rare-earth-ion-doped vanadate crystal comprises Nd:YVO
4Crystal, Nd:GdVO
4Crystal, Nd:LuVO
4Crystal, Nd:Gd
xY
1-xVO
4Crystal, Nd:Lu
xY
1-xVO
4Crystal, Nd:Lu
xGd
1-xVO
4Crystal, Yb:YVO
4Crystal, Yb:GdVO
4Crystal or Yb:LuVO
4Crystal.
Further, said pumping source comprises: laser diode, optical fiber coupling output semiconductor laser system or other LASER Light Source.
Further, the chamber mirror of said resonant cavity is wedge type mirror, level crossing, planoconvex lens or plano-concave mirror.
The utility model has adopted the working media of rare-earth-ion-doped vanadate crystal as resonant cavity, and former and later two logical light faces that gain medium is set are not orthogonal to laser optical path, thereby can avoid because etalon effect influences the effect of locked mode.Therefore this rare-earth-ion-doped vanadate crystal is when producing the stimulated Raman scattering effect to incident laser; Can also pass through the selection of kerr lens effect or saturable Raman gain to the stimulated Raman scattering light pulse; Realization is to the self mode locking of laser, thereby acquisition has the laser of ultrashort pulse.
Description of drawings
Fig. 1 is the principle assumption diagram of the solid state laser that provides of the utility model.
Embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer,, the utility model is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
The utility model has adopted the working media of rare-earth-ion-doped vanadate crystal as resonant cavity; And former and later two logical light faces of gain medium are set to be not orthogonal to laser optical path; This rare-earth-ion-doped vanadate crystal is when producing the stimulated Raman scattering effect to incident laser; Also can produce stronger kerr lens effect, thereby obtain to have the laser of ultrashort pulse.
Fig. 1 shows the theory structure of the solid state laser that the utility model provides, and for the ease of explanation, only shows the part relevant with the utility model.
The solid state laser that the utility model provides comprises pumping source 1 resonant cavity 2, and wherein the inside of resonant cavity 2 has gain medium 22.Pumping source 1 is used for producing pump light and pump light is focused on the working media 22 of resonant cavity 2, and wherein resonant cavity 2 can be straight chamber, three mirror refrative cavities, Z type refrative cavity, X type refrative cavity; Gain medium 22 is rare-earth-ion-doped vanadate crystal, comprises Nd:YVO
4Crystal, Nd:GdVO
4Crystal, Nd:LuVO
4Crystal, Nd:Gd
xY
1-xVO
4Crystal, Nd:Lu
xY
1-xVO
4Crystal, Nd:Lu
xGd
1-xVO
4Crystal, Yb:YVO
4Crystal, Yb:GdVO
4Crystal, Yb:LuVO
4In the crystal one or more.
Above-mentioned pumping source 1 can comprise laser diode, optical fiber coupling output semiconductor laser system or other LASER Light Source; Be the structure that example shows pumping source 1 with optical fiber coupling output semiconductor laser system among Fig. 1, comprise fiber-optic output 11 and focus on coupled system 12.
Above-mentioned resonant cavity 2 also comprises a pumping end chamber mirror 21 and an outgoing mirror 23, and 21 pairs of high transmissions of pump light of pumping end chamber mirror, to the high reflection of fundamental frequency light and single order stokes light, then have transmitance to the single order stokes light at the high reflection of 23 pairs of fundamental frequency light of outgoing mirror.
Above-mentioned pumping end chamber mirror 21 can be wedge type mirror, level crossing, planoconvex lens or plano-concave mirror; For fear of forming etalon effect; Improve the longitudinal mode number of vibration in the resonant cavity; Thereby improve the locked mode effect, in the utility model, have at least one to be not orthogonal to laser optical path in the logical light face 221 of former and later two of gain medium 22 and 222; It is not parallel that face relative between pumping end chamber mirror 21 and the gain medium 22 specifically can be set, and/or relative face is not parallel between gain medium 22 and the outgoing mirror 23.
The utility model has adopted the working media of rare-earth-ion-doped vanadate crystal as resonant cavity 2; The self mode locking characteristic of rare-earth ion-doped vanadate crystal is based on the kerr lens mode locking of vanadate crystal, or based on the selection of saturable Raman gain to the stimulated Raman scattering light pulse.As everyone knows; Rare-earth-ion-doped vanadate crystal has good third-order nonlinear characteristic, can in visible light and near infrared light spectral region, produce the stimulated Raman scattering effect to incident laser, realizes the output from the Raman frequency conversion laser; And this kind structure helps realizing the pattern matching of fundamental frequency light and stokes light; Reduce threshold value, improve the stability and the conversion efficiency of system, simplify the cavity structure of resonant cavity.And produce laser (promptly laser being realized locked mode) with ultrashort pulse in order to use this solid state laser; Need working media to have big non linear coefficient; So that enough strong self-focusing effect to be provided, thus, rare-earth-ion-doped vanadate crystal is when producing the stimulated Raman scattering effect to incident laser; Also can produce stronger kerr lens effect (Kerr-lens effect); Thereby (Ker-lens mode locking KLM), has the laser of ultrashort pulse with acquisition to realize kerr lens mode locking.
With vanadate crystal is YVO
4Crystal is an example, and experimental data can get, YVO
4The nonlinear refractive index of crystal is 1.9*10
-15Cm2/W is 6 times of titanium gem crystal of existing commonly used generation kerr lens effect approximately, because this nonlinear refractive index is the strong and weak parameter of self-focusing effect that a sign is caused by the kerr lens effect, therefore, YVO
4Crystal is a kind of self mode locking of kerr lens efficiently working media.
In an embodiment of the utility model; Outgoing mirror 23 will be through self stimulated Raman scattering effect and kerr lens mode locking effect; Wavelength is that 1.17 μ m, repetition rate are that GHz magnitude, pulse duration are that the ultra-short pulse laser of picosecond magnitude outputs to outside the chamber based on the resonant cavity 13 of vanadate crystal; For this reason, the pumping light wavelength of pumping source 1 generation is 808nm; Pumping end chamber mirror 21 be coated with to the 808nm incident laser high pass through, to 1064nm incident laser and the high anti-deielectric-coating of 1.17 μ m incident lasers; Logical light end face of incident and the logical light end face of outgoing that gain medium 22 upper edges focus on the pump light light path after coupled system 12 focuses on are coated with the deielectric-coating that 808nm incident laser, 1064nm incident laser and 1.17 μ m incident laser height are passed through respectively; Outgoing mirror 23 is coated with high anti-and to the deielectric-coating of 1.17 μ m incident laser partial reflections to the 1064nm incident laser.
After frequency multiplication, the wavelength that can produce fields such as being applied to medical treatment, spectrum analysis is the ultrashort pulse gold-tinted laser of 588nm to the ultra-short pulse laser that the solid state laser that this embodiment of the utility model provides sends again.
In another embodiment of the utility model; Outgoing mirror 23 will be through self stimulated Raman scattering effect and kerr lens mode locking effect; Wavelength is that 1.52 μ m, repetition rate are that GHz magnitude, pulse duration are that the ultra-short pulse laser of picosecond magnitude outputs to outside the chamber based on the resonant cavity 13 of vanadate crystal; For this reason, the pumping light wavelength of pumping source 1 generation is 808nm; Pumping end chamber mirror 131 be coated with to 808nm incident laser and 1064nm incident laser highly pass through, to 1342nm incident laser and the high anti-deielectric-coating of 1.52 μ m incident lasers; Logical light end face of incident and the logical light end face of outgoing that gain medium 22 upper edges focus on the pump light light path after coupled system 12 focuses on are coated with the deielectric-coating that 808nm incident laser, 1064nm incident laser, 1342nm incident laser and 1.52 μ m incident laser height are passed through respectively; Outgoing mirror 23 be coated with to the 1064nm incident laser high pass through, high anti-and to the 1342nm incident laser to the deielectric-coating of 1.52 μ m incident laser partial reflections.The ultra-short pulse laser that the solid state laser that this embodiment of the utility model sends sends can be applicable to optical communication field or is used as the seed source of ultra-short pulse laser amplifier.
The utility model has adopted the working media of rare-earth-ion-doped vanadate crystal as resonant cavity; Have at least one to be not orthogonal to laser optical path in the logical light face of former and later two of this rare-earth-ion-doped vanadate crystal; When incident laser is produced the stimulated Raman scattering effect; Can also pass through the selection of kerr lens effect or saturable Raman gain, realize self mode locking, thereby obtain to have the laser of ultrashort pulse laser to the stimulated Raman scattering light pulse.
The above is merely the preferred embodiment of the utility model; Not in order to restriction the utility model; Any modification of being done within all spirit and principles at the utility model, be equal to replacement and improvement etc., all should be included within the protection range of the utility model.
Claims (6)
1. one kind from Raman frequency conversion self mode locking solid state laser, and comprising: the pumping source resonant cavity is characterized in that: have gain medium in the said resonant cavity, said gain medium is rare-earth-ion-doped vanadate crystal; Have at least one to be not orthogonal to laser optical path in the logical light face of former and later two of said gain medium.
2. as claimed in claim 1 from Raman frequency conversion self mode locking solid state laser, it is characterized in that:
Said resonant cavity comprises a pumping end chamber mirror and an outgoing mirror; Said pumping end chamber mirror is to the high transmission of pump light, to fundamental frequency light and the high reflection of single order stokes light, and said outgoing mirror reflects, the single order stokes light is had transmitance fundamental frequency light height.
3. as claimed in claim 1 from Raman frequency conversion self mode locking solid state laser, it is characterized in that:
Said resonant cavity is straight chamber, three mirror refrative cavities, Z type refrative cavity or X type refrative cavity.
4. as claimed in claim 1 from Raman frequency conversion self mode locking solid state laser, it is characterized in that:
Said rare-earth-ion-doped vanadate crystal comprises Nd:YVO
4Crystal, Nd:GdVO
4Crystal, Nd:LuVO
4Crystal, Nd:Gd
xY
1-xVO
4Crystal, Nd:Lu
xY
1-xVO
4Crystal, Nd:Lu
xGd
1-xVO
4Crystal, Yb:YVO
4Crystal, Yb:GdVO
4Crystal or Yb:LuVO
4Crystal.
5. as claimed in claim 1 from Raman frequency conversion self mode locking solid state laser, it is characterized in that said pumping source comprises: laser diode, optical fiber coupling output semiconductor laser system or other LASER Light Source.
6. as claimed in claim 2 from Raman frequency conversion self mode locking solid state laser, it is characterized in that:
The chamber mirror of said resonant cavity is wedge type mirror, level crossing, planoconvex lens or plano-concave mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201751762U CN202276060U (en) | 2011-05-26 | 2011-05-26 | Self-Raman frequency conversion self-locking mode solid laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201751762U CN202276060U (en) | 2011-05-26 | 2011-05-26 | Self-Raman frequency conversion self-locking mode solid laser |
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| CN202276060U true CN202276060U (en) | 2012-06-13 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801102A (en) * | 2012-09-07 | 2012-11-28 | 长春理工大学 | 3.9 mu m mid infrared laser |
| CN104505706A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | YVO4 femtosecond laser device capable of emitting laser having wavelength around 1134 nm |
| WO2018040019A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.9-micron wave band pulse laser |
| WO2018040018A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.3-micron wave band pulse laser |
| WO2018040021A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | GENERATION DEVICE AND METHOD FOR 2.1 μM WAVEBAND PULSE LASER AND USE THEREOF |
-
2011
- 2011-05-26 CN CN2011201751762U patent/CN202276060U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801102A (en) * | 2012-09-07 | 2012-11-28 | 长春理工大学 | 3.9 mu m mid infrared laser |
| CN104505706A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | YVO4 femtosecond laser device capable of emitting laser having wavelength around 1134 nm |
| CN104505706B (en) * | 2014-11-19 | 2018-11-02 | 中国科学院光电研究院 | A kind of 1134nm wavelength Yb：YVO4 femto-second lasers |
| WO2018040019A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.9-micron wave band pulse laser |
| WO2018040018A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.3-micron wave band pulse laser |
| WO2018040021A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | GENERATION DEVICE AND METHOD FOR 2.1 μM WAVEBAND PULSE LASER AND USE THEREOF |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120613 Termination date: 20130526 |