CN206099036U - Device for generating 2. 3 micron wave band pulsed laser - Google Patents
Device for generating 2. 3 micron wave band pulsed laser Download PDFInfo
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- CN206099036U CN206099036U CN201621007184.5U CN201621007184U CN206099036U CN 206099036 U CN206099036 U CN 206099036U CN 201621007184 U CN201621007184 U CN 201621007184U CN 206099036 U CN206099036 U CN 206099036U
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- pulse laser
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- pulsed laser
- wave band
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Abstract
The utility model is suitable for an optics field provides a device for generating 2.3 micron wave band pulsed laser, including diode pumped pulse laser, pumping point focusing coupled system and resonant cavity, the resonant cavity includes end pump laser medium, end pump laser medium is the vanadate crystal of doping thulium ion, the pumping light warp that diode pumped pulse laser produced the coupling of pumping point focusing coupled system gets into the vanadate crystal of doping thulium ion, thulium ion pass through stimulated emission, produce 1.9 microns wave band pulsed laser, 1.9 the micron wave band pulsed laser be in vibrate in the resonant cavity, the vanadate crystal is right 1.9 micron wave band pulsed laser carries out raman frequency conversion effect and mode locking effect, exports 2.3 microns wave band pulsed laser. The utility model provides a device for generating 2.3 micron wave band pulsed laser has avoided the lower limitation of saturable absorber light damage threshold, has obtained the ultrashort pulsed laser of 2.3 mu m wave bands of high power, high -energy.
Description
Technical field
This utility model belongs to optical field, more particularly to a kind of generator of 2.3 micron waveband pulse laser.
Background technology
The acquisition modes of current 2.3 mu m waveband pulse laser mainly have two kinds：First, with trivalent rare earth element Tm3+、Ho3+For
The solid or fiber pulse laser of active ions.2nd, using 1 mu m waveband laser pumped by pulsed laser ZnGeP (ZGP) or
KTiOPO4(KTP) optical parametric oscillator (OPO) of crystal.Second acquisition modes is as device architecture used is complicated, cost compared with
It is high, efficiency is low and seldom adopt.
The technology for producing 2.3 mu m waveband ultra-short pulse lasers is broadly divided into two kinds of active mode locking and passive mode-locking.Actively lock
Mould is long due to required modulation element response time, and the non-constant width of loss window of its generation, therefore the arteries and veins for obtaining
It is wider, generally in tens to hundreds of psec (ps) magnitude.Fast response time of the passive mode-locking using saturable absorber, can
To obtain the ultra-short pulse laser for being as short as femtosecond (fs) magnitude.The saturable absorber of current 2.3 mu m waveband mainly has：(1) inhale
Crystal is received, such as：PbS quantum glass, Cr2+:ZnS、Cr2+:ZnSe etc.；(2) semi-conducting material：Such as quasiconductor saturable absorption
Mirror (SESAM), InGaAs etc.；(3) new one-dimensional, two-dimensional material, such as Graphene, CNT, MoS2Deng.However, saturable
The relatively low light injury threshold of absorber limits the output of 2.3 mu m waveband passive mode-locking ultra-short pulse lasers.
Therefore, prior art existing defects, need to improve.
Utility model content
To solve above-mentioned technical problem, this utility model provides a kind of generator of 2.3 micron waveband pulse laser,
It is intended to obtain high power, 2.3 micron waveband ultra-short pulse lasers of high-energy, while simplifying generation process.
This utility model is achieved in that a kind of generator of 2.3 micron waveband pulse laser, including semiconductor pump
Pu pulse laser, pump light focus on coupled system and resonator cavity, and the resonator cavity includes end pumped laser medium, the end
Face-pumping laser medium is the vanadate crystal of doping thulium ion；The pump light Jing that the semiconductor pumped pulse laser is produced
The pump light focuses on the vanadate crystal that coupled system is coupled into the doping thulium ion, and thulium ion passes through stimulated radiation,
1.9 micron waveband pulse lasers are produced, the 1.9 micron waveband pulse laser is shaken in the resonance intracavity；The vanadate
Crystal carries out Raman frequency conversion effect and locked mode effect to the 1.9 micron waveband pulse laser, and 2.3 micron waveband pulses of output swash
Light.
Further, the resonator cavity also includes pumping end hysteroscope, and pumping end hysteroscope is focused on positioned at the pump light
Between coupled system and the end pumped laser medium, for the pulse laser of 1.9 microns of reflection and 2.3 micron wavebands, together
When through 795 nano wavebands pump light.
Further, the resonator cavity also includes outgoing mirror, for reflecting 1.9 micron wavebands, while reflecting and passing through 2.3
The pulse laser of micron waveband.
Further, the resonator cavity also includes acousto-optic Q-switching, and the acousto-optic Q-switching is located at the end pumped laser
Between medium and the outgoing mirror, for improving the pulsed laser power density of the resonance intracavity.
Further, the wavelength of the pump light is 795 nanometers.
Further, the end pumped laser medium is Tm:YVO4Crystal or Tm:GdVO4Crystal.
Compared with prior art, beneficial effect is this utility model：2.3 micron waveband of one kind that this utility model is provided
The generator of pulse laser, the resonator cavity of the generator include end pumped laser medium, the end pumped laser
Medium is the vanadate crystal of doping thulium ion；First pass through thulium ion and produce stimulated radiation, produce 1.9 micron waveband pulses and swash
Light, then with 1.9 micron waveband pulse lasers as fundamental frequency light, acted on using the Raman frequency conversion effect and locked mode of vanadate crystal, it is defeated
Go out 2.3 micron waveband pulse lasers.This utility model by the vanadate crystal of the thulium ion that adulterates have it is excellent from Raman
Frequency property and kerr lens mode locking characteristic combine, by kerr lens mode locking, saturation Raman gain and synchronous pump three
The mechanism of kind produces the stable mode-locking to 2.3 mu m waveband pulse lasers, the ultra-short pulse laser of 2.3 mu m waveband of final output.This reality
With the generator of 2.3 micron waveband pulse lasers of new offer, due to avoid saturable absorber light injury threshold compared with
Low limitation, it is hereby achieved that 2.3 mu m waveband ultra-short pulse lasers of high power, high-energy.
Description of the drawings
Fig. 1 is the structural representation of the generator of the 2.3 micron waveband pulse lasers that this utility model embodiment is provided.
Specific embodiment
In order that the purpose of this utility model, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to this utility model.It should be appreciated that specific embodiment described herein is only to explain
This utility model, is not used to limit this utility model.
As shown in figure 1, this utility model embodiment provides a kind of generator 100 of 2.3 micron waveband pulse laser,
Coupled system 2 and resonator cavity 7 are focused on including semiconductor pumped pulse laser (not shown), pump light, resonator cavity 7 includes end face
Pumped laser medium 4；Wherein, 1 is the fiber-optic output of semiconductor pumped pulse laser, and end pumped laser medium 4 is to mix
The vanadate crystal of miscellaneous thulium ion；The pump light Jing pump lights that semiconductor pumped pulse laser is produced focus on 2 coupling of coupled system
The vanadate crystal (end pumped laser medium 4) for entering doping thulium ion is closed, thulium ion produces 1.9 micro- by stimulated radiation
VHF band pulse laser, the 1.9 micron waveband pulse laser are shaken in resonator cavity 7；The vanadate crystal is to described 1.9
Micron waveband pulse laser carries out Raman frequency conversion effect and locked mode effect, exports 2.3 micron waveband pulse lasers.
Specifically, the 1.9 micron waveband pulse laser vanadate crystal have from Raman frequency conversion effect and gram
Under your lens locked mode effect, 2.3 micron waveband pulse lasers are produced.
Specifically, the wavelength of the pump light is 795 nanometers.
Resonator cavity 7 also includes pumping end hysteroscope 3, and pumping end hysteroscope 3 is located at pump light and focuses on coupled system 2 and end pumping
Between laser medium 4, for reflecting the pulse laser of 1.9 microns and 2.3 micron wavebands, while through the pump of 795 nano wavebands
Pu light.
Resonator cavity 7 also includes outgoing mirror 6, for reflecting 1.9 micron wavebands, while reflecting and through 2.3 micron wavebands
Pulse laser.
Specifically, pumping end hysteroscope 3 can be plane mirror, planoconvex lens or plano-concave mirror, plate high to 795nm band pulses laser
Thoroughly and to 1.9 μm, the high anti-deielectric-coating of 2.3 mu m waveband pulse lasers；Outgoing mirror 6 can be plane mirror, planoconvex lens or plano-concave mirror,
Plate deielectric-coating that is high to 1.9 mu m waveband pulse lasers anti-and reflecting to 2.3 mu m waveband pulse laser parts, partly pass through.
Resonator cavity 7 also includes acousto-optic Q-switching 5, and acousto-optic Q-switching 5 is located between end pumped laser medium 4 and outgoing mirror 6,
For improving the pulsed laser power density in resonator cavity 7.
Specifically, end pumped laser medium 4 can be Tm:YVO4Crystal or Tm:GdVO4Crystal, Tm:YVO4Or Tm:
GdVO4Crystal with the pulse laser of 1.9 mu m wavebands as fundamental frequency light, using the 890cm of vanadate crystal-1The Raman frequency conversion of left and right is made
With 2.3 mu m waveband pulse lasers of generation.
The generator of the 2.3 micron waveband pulse lasers that the present embodiment is provided, by the vanadate crystal of doping thulium ion
The 890cm being had-1Raman frequency property and kerr lens mode locking characteristic combine, especially by kerr lens mode locking,
Three kinds of mechanism of saturation Raman gain and synchronous pump produce the stable mode-locking to 2.3 mu m waveband pulse lasers, so as to obtain height
2.3 mu m waveband ultra-short pulse lasers of power, high-energy.
The present embodiment additionally provides a kind of production method of 2.3 micron waveband pulse laser, comprises the following steps：
S1：The pump light Jing pump lights focusing coupled system that semiconductor pumped pulse laser is produced is coupled into thulium doped
The vanadate crystal of ion, thulium ion produce the pulse laser of 1.9 micron wavebands by stimulated radiation；
S2：Pulse laser with 1.9 micron waveband is acted on as fundamental frequency light using the Raman frequency conversion of vanadate crystal,
Produce 2.3 micron waveband pulse lasers；
S3：The vanadate crystal carries out locked mode effect to the 2.3 micron waveband pulse lasers for producing, and exports 2.3 microns
Band pulse laser.
With reference to the generator 100 of above-mentioned 2.3 micron waveband pulse laser：
Specifically, in step S1, the pump light that semiconductor pumped pulse laser is produced is by semiconductor pumped pulse laser
The fiber-optic output 1 of device is exported, and is focused in coupled system 2 into pump light Jing pump lights, and pump light focuses on coupled system 2 by pump
Pu light is focused in end pumped laser medium 4 (vanadate crystal of doping thulium ion), and thulium ion therein is by being excited spoke
Penetrate, produce 1.9 micron waveband pulse lasers, the 1.9 micron waveband pulse laser is shaken in resonator cavity 7.
Specifically, in step S2 and S3, vanadate crystal with the 1.9 micron waveband pulse lasers that export as fundamental frequency light, profit
Acted on the Raman frequency conversion effect and locked mode of vanadate crystal, and the effect of pumping end hysteroscope 3 and outgoing mirror 6, produce 2.3
Micron waveband pulse laser.
Specifically, the wavelength of the pump light is 795 nanometers.Pumping end hysteroscope 3 can be plane mirror, planoconvex lens or plano-concave
Mirror, plates high to 795nm band pulses laser thoroughly and to 1.9 μm, the high anti-deielectric-coating of 2.3 mu m waveband pulse lasers；Outgoing mirror 6 can
Think plane mirror, planoconvex lens or plano-concave mirror, plate high to 1.9 mu m waveband pulse lasers instead and to 2.3 mu m waveband pulse laser parts
Reflection, the deielectric-coating for partly passing through.The vanadate crystal of the doping thulium ion can be Tm:YVO4Crystal or Tm:GdVO4It is brilliant
Body.
Specifically, the Tm in step S2:YVO4Or Tm:GdVO4Crystal is utilized with 1.9 mu m waveband pulse lasers as fundamental frequency light
The 890cm of vanadate crystal-1The Raman frequency conversion effect of left and right, produces 2.3 mu m waveband pulse lasers.
The production method of a kind of 2.3 micron waveband pulse laser that the present embodiment is provided, due to avoiding saturable absorption
The relatively low limitation of body light injury threshold, it is hereby achieved that 2.3 mu m waveband ultra-short pulse lasers of high power, high-energy.
The present embodiment additionally provides the application of above-mentioned 2.3 micron waveband pulse laser, the 2.3 micron waveband pulse laser
There is extensive and important application in fields such as military affairs, medical science, environmental monitoring, materials processing, telecommunication or meterological.
Preferred embodiment of the present utility model is the foregoing is only, it is not to limit this utility model, all at this
Any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in this utility model
Protection domain within.
Claims (6)
1. a kind of generator of 2.3 micron waveband pulse laser, including semiconductor pumped pulse laser, pump light focusing coupling
Syzygy is united and resonator cavity, it is characterised in that the resonator cavity includes end pumped laser medium, the end pumped laser medium
For the vanadate crystal of the thulium ion that adulterates；Pump light described in the pump light Jing that the semiconductor pumped pulse laser is produced is focused on
Coupled system is coupled into the vanadate crystal of the doping thulium ion, and thulium ion produces 1.9 micron wavebands by stimulated radiation
Pulse laser, the 1.9 micron waveband pulse laser are shaken in the resonance intracavity；The vanadate crystal is micro- to described 1.9
VHF band pulse laser carries out Raman frequency conversion effect and locked mode effect, exports 2.3 micron waveband pulse lasers.
2. generator as claimed in claim 1, it is characterised in that the resonator cavity also includes pumping end hysteroscope, the pump
Pu end hysteroscope is located at the pump light and focuses between coupled system and the end pumped laser medium, for reflecting 1.9 microns
Pulse laser with 2.3 micron wavebands, while through the pump light of 795 nano wavebands.
3. generator as claimed in claim 2, it is characterised in that the resonator cavity also includes outgoing mirror, for reflection 1.9
Micron waveband, while reflection and through the pulse laser of 2.3 micron wavebands.
4. generator as claimed in claim 3, it is characterised in that the resonator cavity also includes acousto-optic Q-switching, the acousto-optic
Q-switch is located between the end pumped laser medium and the outgoing mirror, for improving the pulse laser of the resonance intracavity
Power density.
5. generator as claimed in claim 1, it is characterised in that the wavelength of the pump light is 795 nanometers.
6. generator as claimed in claim 1, it is characterised in that the end pumped laser medium is Tm:YVO4Crystal or
Tm:GdVO4Crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621007184.5U CN206099036U (en) | 2016-08-31 | 2016-08-31 | Device for generating 2. 3 micron wave band pulsed laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621007184.5U CN206099036U (en) | 2016-08-31 | 2016-08-31 | Device for generating 2. 3 micron wave band pulsed laser |
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| Publication Number | Publication Date |
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| CN206099036U true CN206099036U (en) | 2017-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621007184.5U Expired - Fee Related CN206099036U (en) | 2016-08-31 | 2016-08-31 | Device for generating 2. 3 micron wave band pulsed laser |
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| CN (1) | CN206099036U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111262120A (en) * | 2020-01-22 | 2020-06-09 | 新沂市锡沂高新材料产业技术研究院有限公司 | Based on mix Nd3+Method for generating 1.8-micron waveband pulse laser of ceramic optical fiber |
| CN117317792A (en) * | 2023-11-29 | 2023-12-29 | 长春理工大学 | Ground state induction excited state mixed pumping mid-infrared laser |
-
2016
- 2016-08-31 CN CN201621007184.5U patent/CN206099036U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111262120A (en) * | 2020-01-22 | 2020-06-09 | 新沂市锡沂高新材料产业技术研究院有限公司 | Based on mix Nd3+Method for generating 1.8-micron waveband pulse laser of ceramic optical fiber |
| CN117317792A (en) * | 2023-11-29 | 2023-12-29 | 长春理工大学 | Ground state induction excited state mixed pumping mid-infrared laser |
| CN117317792B (en) * | 2023-11-29 | 2024-02-23 | 长春理工大学 | Ground state induction excited state mixed pumping mid-infrared laser |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20170412 Termination date: 20200831 |