CN106253052A - Generator, production method and the application of a kind of 2.3 micron waveband pulse lasers - Google Patents
Generator, production method and the application of a kind of 2.3 micron waveband pulse lasers Download PDFInfo
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- CN106253052A CN106253052A CN201610778567.0A CN201610778567A CN106253052A CN 106253052 A CN106253052 A CN 106253052A CN 201610778567 A CN201610778567 A CN 201610778567A CN 106253052 A CN106253052 A CN 106253052A
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- micron
- micron waveband
- pump light
- pulse lasers
- pulse laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The present invention is applicable to optical field, provide the generator of a kind of 2.3 micron waveband pulse lasers, coupled system and resonator cavity is focused on including semiconductor pumped pulse laser, pump light, described resonator cavity includes that end pumped laser medium, described end pumped laser medium are the vanadate crystal of thulium doped ion；The pump light that described semiconductor pumped pulse laser produces focuses on coupled system through described pump light and is coupled into the vanadate crystal of described thulium doped ion, thulium ion passes through stimulated radiation, producing 1.9 micron waveband pulse lasers, described 1.9 micron waveband pulse lasers shake in described resonator cavity；Described vanadate crystal carries out Raman frequency conversion effect and locked mode effect to described 1.9 micron waveband pulse lasers, exports 2.3 micron waveband pulse lasers.The generator of 2.3 micron waveband pulse lasers that the present invention provides, it is to avoid the limitation that saturable absorber light injury threshold is relatively low, it is thus achieved that high power, high-octane 2.3 mu m waveband ultra-short pulse lasers.
Description
Technical field
The invention belongs to optical field, particularly relate to the generator of a kind of 2.3 micron waveband pulse lasers, production method
And application.
Background technology
The acquisition mode of current 2.3 mu m waveband pulse lasers mainly has two kinds: one, with trivalent rare earth element Tm3+、Ho3+For
The solid of active ions or fiber pulse laser.Two, utilize 1 mu m waveband laser pumped by pulsed laser ZnGeP (ZGP) or
KTiOPO4(KTP) optical parametric oscillator (OPO) of crystal.The second obtains mode due to device architecture used complexity, cost relatively
High, efficiency is low and seldom uses.
The technology producing 2.3 mu m waveband ultra-short pulse lasers is broadly divided into active mode locking and passive mode-locking two kinds.Actively lock
Mould is long due to required modulation element response time, and its non-constant width of loss window produced, the arteries and veins therefore obtained
Width is wider, generally in tens to hundreds of psec (ps) magnitude.Passive mode-locking utilizes the fast response time of saturable absorber, can
To obtain the ultra-short pulse laser being as short as femtosecond (fs) magnitude.The saturable absorber of current 2.3 mu m wavebands mainly has: (1) inhales
Receive crystal, such as: PbS quantum glass, Cr2+:ZnS、Cr2+: ZnSe etc.；(2) semi-conducting material: such as quasiconductor saturable absorption
Mirror (SESAM), InGaAs etc.；(3) new one-dimensional, two-dimensional material, such as Graphene, CNT, MoS2Deng.But, saturable
The relatively low light injury threshold of absorber limits the output of 2.3 mu m waveband passive mode-locking ultra-short pulse lasers.
Therefore, prior art existing defects, need to improve.
Summary of the invention
For solving above-mentioned technical problem, the invention provides the generator of a kind of 2.3 micron waveband pulse lasers, generation
Method, it is intended to obtain high power, high-octane 2.3 micron waveband ultra-short pulse lasers, simplify generation process simultaneously.
The present invention is achieved in that the generator of a kind of 2.3 micron waveband pulse lasers, including semiconductor pumped arteries and veins
Rush laser instrument, pump light focuses on coupled system and resonator cavity, and described resonator cavity includes end pumped laser medium, described end face pump
Pu laser medium is the vanadate crystal of thulium doped ion；The pump light that described semiconductor pumped pulse laser produces is through described
Pump light focuses on coupled system and is coupled into the vanadate crystal of described thulium doped ion, and thulium ion passes through stimulated radiation, produces
1.9 micron waveband pulse lasers, described 1.9 micron waveband pulse lasers shake in described resonator cavity；Described vanadate crystal
Described 1.9 micron waveband pulse lasers are carried out Raman frequency conversion effect and locked mode effect, exports 2.3 micron waveband pulse lasers.
Further, described resonator cavity also includes that pumping end chamber mirror, described pumping end chamber mirror are positioned at described pump light and focus on
Between coupled system and described end pumped laser medium, for reflection 1.9 microns and the pulse laser of 2.3 micron wavebands, together
Time through the pump light of 795 nano wavebands.
Further, described resonator cavity also includes outgoing mirror, for reflection 1.9 micron wavebands, reflects and through 2.3 simultaneously
The pulse laser of micron waveband.
Further, described resonator cavity also includes that acousto-optic Q-switching, described acousto-optic Q-switching are positioned at described end pumped laser
Between medium and described outgoing mirror, for improving the pulsed laser power density in described resonator cavity.
Further, the wavelength of described pump light is 795 nanometers.
Further, described end pumped laser medium is Tm:YVO4Crystal or Tm:GdVO4Crystal.
Present invention also offers the production method of a kind of 2.3 micron waveband pulse lasers, comprise the following steps:
Semiconductor pumped pulse laser produce pump light through pump light focus on coupled system be coupled into thulium doped from
The vanadate crystal of son, thulium ion passes through stimulated radiation, produces the pulse laser of 1.9 micron wavebands；
With the pulse laser of described 1.9 micron wavebands as fundamental frequency light, utilize the Raman frequency conversion effect of vanadate crystal, produce
2.3 micron waveband pulse lasers；
Described vanadate crystal carries out locked mode effect to the 2.3 micron waveband pulse lasers produced, and exports 2.3 micron wavebands
Pulse laser.
Further, the wavelength of described pump light is 795 nanometers.
Further, described vanadate crystal is Tm:YVO4Crystal or Tm:GdVO4Crystal.
Present invention also offers the application of a kind of 2.3 micron waveband pulse lasers, by 2.3 micron waveband pulse laser application
In military affairs, medical science, environmental monitoring, materials processing, telecommunication or meterological field.
The present invention compared with prior art, has the beneficial effects that: the one 2.3 micron waveband pulse laser that the present invention provides
Generator, production method, the resonator cavity of described generator includes end pumped laser medium, described end pumped laser
Medium is the vanadate crystal of thulium doped ion；First pass through thulium ion and produce stimulated radiation, produce 1.9 micron waveband pulses and swash
Light, then with 1.9 micron waveband pulse lasers as fundamental frequency light, utilize Raman frequency conversion effect and the locked mode effect of vanadate crystal, defeated
Go out 2.3 micron waveband pulse lasers.It is excellent from Raman frequency conversion that the vanadate crystal of thulium doped ion is had by the present invention
Characteristic and kerr lens mode locking characteristic combine, by kerr lens mode locking, saturated Raman gain and three kinds of machines of synchronous pump
System produces the stable mode-locking to 2.3 mu m waveband pulse lasers, the final ultra-short pulse laser exporting 2.3 mu m wavebands.The present invention carries
The generator of 2.3 micron waveband pulse lasers of confession, production method are owing to avoiding saturable absorber light injury threshold relatively
Low limitation, it is hereby achieved that high power, high-octane 2.3 mu m waveband ultra-short pulse lasers.
Accompanying drawing explanation
Fig. 1 is the structural representation of the generator of the 2.3 micron waveband pulse lasers that the embodiment of the present invention provides.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and
It is not used in the restriction present invention.
As it is shown in figure 1, embodiments provide the generator 100 of a kind of 2.3 micron waveband pulse lasers, including
Semiconductor pumped pulse laser (not shown), pump light focus on coupled system 2 and resonator cavity 7, and resonator cavity 7 includes end pumping
Laser medium 4；Wherein, 1 is the fiber-optic output of semiconductor pumped pulse laser, and end pumped laser medium 4 is thulium doped
The vanadate crystal of ion；The pump light that semiconductor pumped pulse laser produces focuses on coupled system 2 through pump light and is coupled into
Entering the vanadate crystal (end pumped laser medium 4) of thulium doped ion, thulium ion passes through stimulated radiation, produces 1.9 micron waves
Section pulse laser, described 1.9 micron waveband pulse lasers shake in resonator cavity 7；Described vanadate crystal is to described 1.9 microns
Band pulse laser carries out Raman frequency conversion effect and locked mode effect, exports 2.3 micron waveband pulse lasers.
Specifically, described 1.9 micron waveband pulse lasers vanadate crystal had from Raman frequency conversion effect and gram
Under your lens locked mode effect, produce 2.3 micron waveband pulse lasers.
Specifically, the wavelength of described pump light is 795 nanometers.
Resonator cavity 7 also includes that pumping end chamber mirror 3, pumping end chamber mirror 3 are positioned at pump light and focus on coupled system 2 and end pumping
Between laser medium 4, for reflection 1.9 microns and the pulse laser of 2.3 micron wavebands, simultaneously pass through 795 nano wavebands pump
Pu light.
Resonator cavity 7 also includes outgoing mirror 6, for reflection 1.9 micron wavebands, reflects and through 2.3 micron wavebands simultaneously
Pulse laser.
Specifically, pumping end chamber mirror 3 can be plane mirror, planoconvex lens or plano-concave mirror, plates 795nm band pulse laser high
Thoroughly with to 1.9 μm, the high anti-deielectric-coating of 2.3 mu m waveband pulse lasers；Outgoing mirror 6 can be plane mirror, planoconvex lens or plano-concave mirror,
Plate anti-and to 2.3 mu m waveband pulse lasers partially reflective, that partly pass through deielectric-coating high to 1.9 mu m waveband pulse lasers.
Resonator cavity 7 also includes acousto-optic Q-switching 5, acousto-optic Q-switching 5 between end pumped laser medium 4 and outgoing mirror 6,
Pulsed laser power density in improving resonator cavity 7.
Specifically, end pumped laser medium 4 can be Tm:YVO4Crystal or Tm:GdVO4Crystal, Tm:YVO4Or Tm:
GdVO4Crystal, with the pulse laser of 1.9 mu m wavebands as fundamental frequency light, utilizes the 890cm of vanadate crystal-1The Raman frequency conversion of left and right is made
With, produce 2.3 mu m waveband pulse lasers.
The generator of the 2.3 micron waveband pulse lasers that the present embodiment provides, by the vanadate crystal of thulium doped ion
The 890cm being had-1Raman frequency property and kerr lens mode locking characteristic combine, especially by kerr lens mode locking,
Saturated Raman gain and synchronous pump three kinds mechanism produce the stable mode-locking to 2.3 mu m waveband pulse lasers, thus obtain height
Power, high-octane 2.3 mu m waveband ultra-short pulse lasers.
The present embodiment additionally provides the production method of a kind of 2.3 micron waveband pulse lasers, comprises the following steps:
The pump light that S1: semiconductor pumped pulse laser produces focuses on coupled system through pump light and is coupled into thulium doped
The vanadate crystal of ion, thulium ion passes through stimulated radiation, produces the pulse laser of 1.9 micron wavebands；
S2: with the pulse laser of described 1.9 micron wavebands as fundamental frequency light, utilize the Raman frequency conversion effect of vanadate crystal,
Produce 2.3 micron waveband pulse lasers；
S3: described vanadate crystal carries out locked mode effect to the 2.3 micron waveband pulse lasers produced, and exports 2.3 microns
Band pulse laser.
Generator 100 in conjunction with above-mentioned 2.3 micron waveband pulse lasers:
Specifically, in step S1, the pump light that semiconductor pumped pulse laser produces is by semiconductor pumped pulse laser
The fiber-optic output 1 of device exports, and entrance pump light is in pump light focuses on coupled system 2, and pump light focuses on coupled system 2 by pump
Pu light focuses in end pumped laser medium 4 (vanadate crystal of thulium doped ion), and thulium ion therein is by being excited spoke
Penetrating, produce 1.9 micron waveband pulse lasers, described 1.9 micron waveband pulse lasers shake in resonator cavity 7.
Specifically, in step S2 and S3, vanadate crystal with output 1.9 micron waveband pulse lasers as fundamental frequency light, profit
With Raman frequency conversion effect and the locked mode effect of vanadate crystal, and pumping end chamber mirror 3 and the effect of outgoing mirror 6, produce 2.3
Micron waveband pulse laser.
Specifically, the wavelength of described pump light is 795 nanometers.Pumping end chamber mirror 3 can be plane mirror, planoconvex lens or plano-concave
Mirror, plates 795nm band pulse laser high thoroughly with to 1.9 μm, the high anti-deielectric-coating of 2.3 mu m waveband pulse lasers；Outgoing mirror 6 can
Think plane mirror, planoconvex lens or plano-concave mirror, plate high anti-to 1.9 mu m waveband pulse lasers and to 2.3 mu m waveband pulse laser parts
The deielectric-coating that reflection, part pass through.The vanadate crystal of described thulium doped ion can be Tm:YVO4Crystal or Tm:GdVO4Brilliant
Body.
Specifically, the Tm:YVO in step S24Or Tm:GdVO4Crystal, with 1.9 mu m waveband pulse lasers as fundamental frequency light, utilizes
The 890cm of vanadate crystal-1The Raman frequency conversion effect of left and right, produces 2.3 mu m waveband pulse lasers.
The production method of a kind of 2.3 micron waveband pulse lasers that the present embodiment provides, owing to avoiding saturable absorption
The limitation that body light injury threshold is relatively low, it is hereby achieved that high power, high-octane 2.3 mu m waveband ultra-short pulse lasers.
The present embodiment additionally provides the application of above-mentioned 2.3 micron waveband pulse lasers, described 2.3 micron waveband pulse lasers
In fields such as military affairs, medical science, environmental monitoring, materials processing, telecommunication or meterological, there is extensive and important application.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any amendment, equivalent and the improvement etc. made within god and principle, should be included within the scope of the present invention.
Claims (10)
1. a generator for 2.3 micron waveband pulse lasers, focuses on coupling including semiconductor pumped pulse laser, pump light
Assembly system and resonator cavity, it is characterised in that described resonator cavity includes end pumped laser medium, described end pumped laser medium
Vanadate crystal for thulium doped ion；The pump light that described semiconductor pumped pulse laser produces focuses on through described pump light
Coupled system is coupled into the vanadate crystal of described thulium doped ion, and thulium ion passes through stimulated radiation, produces 1.9 micron wavebands
Pulse laser, described 1.9 micron waveband pulse lasers shake in described resonator cavity；Described vanadate crystal is to described 1.9 micro-
VHF band pulse laser carries out Raman frequency conversion effect and locked mode effect, exports 2.3 micron waveband pulse lasers.
2. generator as claimed in claim 1, it is characterised in that described resonator cavity also includes pumping end chamber mirror, described pump
End chamber, Pu mirror focuses between coupled system and described end pumped laser medium at described pump light, for reflection 1.9 microns
With the pulse laser of 2.3 micron wavebands, simultaneously through the pump light of 795 nano wavebands.
3. generator as claimed in claim 2, it is characterised in that described resonator cavity also includes outgoing mirror, for reflection 1.9
Micron waveband, reflect and through the pulse laser of 2.3 micron wavebands simultaneously.
4. generator as claimed in claim 1, it is characterised in that described resonator cavity also includes acousto-optic Q-switching, described acousto-optic
Q-switch is between described end pumped laser medium and described outgoing mirror, for improving the pulse laser in described resonator cavity
Power density.
5. generator as claimed in claim 1, it is characterised in that the wavelength of described pump light is 795 nanometers.
6. generator as claimed in claim 1, it is characterised in that described end pumped laser medium is Tm:YVO4Crystal or
Tm:GdVO4Crystal.
7. the production method of a micron waveband pulse laser, it is characterised in that comprise the following steps:
The pump light that semiconductor pumped pulse laser produces focuses on coupled system through pump light and is coupled into thulium doped ion
Vanadate crystal, thulium ion passes through stimulated radiation, produces the pulse laser of 1.9 micron wavebands；
With the pulse laser of described 1.9 micron wavebands as fundamental frequency light, utilize the Raman frequency conversion effect of vanadate crystal, produce 2.3
Micron waveband pulse laser；
Described vanadate crystal carries out locked mode effect to the 2.3 micron waveband pulse lasers produced, and exports 2.3 micron waveband pulses
Laser.
8. production method as claimed in claim 7, it is characterised in that the wavelength of described pump light is 795 nanometers.
9. production method as claimed in claim 7, it is characterised in that described vanadate crystal is Tm:YVO4Crystal or Tm:
GdVO4Crystal.
10. the application of a micron waveband pulse laser, it is characterised in that 2.3 micron waveband pulse lasers are applied to army
Thing, medical science, environmental monitoring, materials processing, telecommunication or meterological field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610778567.0A CN106253052A (en) | 2016-08-31 | 2016-08-31 | Generator, production method and the application of a kind of 2.3 micron waveband pulse lasers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610778567.0A CN106253052A (en) | 2016-08-31 | 2016-08-31 | Generator, production method and the application of a kind of 2.3 micron waveband pulse lasers |
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| CN106253052A true CN106253052A (en) | 2016-12-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092360A (en) * | 2018-10-23 | 2020-05-01 | 海罗尼克株式会社 | Laser system |
| CN117317792A (en) * | 2023-11-29 | 2023-12-29 | 长春理工大学 | Ground state induction excited state mixed pumping mid-infrared laser |
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|---|---|---|---|---|
| CN102244361A (en) * | 2011-05-26 | 2011-11-16 | 深圳大学 | Self-Raman frequency conversion self-mode locking solid laser |
| CN105846302A (en) * | 2016-06-02 | 2016-08-10 | 中国科学院物理研究所 | Novel Kerr-lens mode-locking Cr: ZnS femtosecond laser |
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2016
- 2016-08-31 CN CN201610778567.0A patent/CN106253052A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244361A (en) * | 2011-05-26 | 2011-11-16 | 深圳大学 | Self-Raman frequency conversion self-mode locking solid laser |
| CN105846302A (en) * | 2016-06-02 | 2016-08-10 | 中国科学院物理研究所 | Novel Kerr-lens mode-locking Cr: ZnS femtosecond laser |
Non-Patent Citations (2)
| Title |
|---|
| CHENLIN DU等: "《YVO4/Nd:YVO4/ YVO4 self-Raman laser at 1764nm》", 《APPLIED PHSICS B》 * |
| J.J.ZAYHOWSKI等: "《Tm：YVO4 microchip laser》", 《APPLIED OPTICS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092360A (en) * | 2018-10-23 | 2020-05-01 | 海罗尼克株式会社 | Laser system |
| CN117317792A (en) * | 2023-11-29 | 2023-12-29 | 长春理工大学 | Ground state induction excited state mixed pumping mid-infrared laser |
| CN117317792B (en) * | 2023-11-29 | 2024-02-23 | 长春理工大学 | Ground state induction excited state mixed pumping mid-infrared laser |
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