CN105226491A - A kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings - Google Patents
A kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings Download PDFInfo
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- CN105226491A CN105226491A CN201510733912.4A CN201510733912A CN105226491A CN 105226491 A CN105226491 A CN 105226491A CN 201510733912 A CN201510733912 A CN 201510733912A CN 105226491 A CN105226491 A CN 105226491A
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Abstract
The present invention relates to a kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings, comprise solid state laser, optical isolator, OPO resonant cavity, the BaGa as optical parametric oscillator pumping source
4se
7crystal and filter, OPO resonant cavity is by inputting mirror and outgoing mirror is formed; The pump direction exported along solid state laser places optical isolator, input mirror, BaGa successively
4se
7crystal, outgoing mirror and filter; Described input mirror, outgoing mirror and BaGa
4se
7the logical light face of crystal is parallel mutually, and each logical light face is perpendicular to the output beam of solid state laser.The invention solves the problems such as current nonlinear crystal easy damaged, conversion efficiency is low, output energy is little.
Description
Technical field
The present invention relates to a kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings, belong to high-energy mid-infrared laser technical field.
Background technology
In infrared 4-15 micron waveband laser have important application in fields such as biologic medical, spectroscopy, Atmospheric Survey, electrooptical countermeasuress.In biologic medical field, the light source of this wave band is the important tool of Study on Protein folding kinetics, biomolecule identification, high accuracy Minimally Invasive Surgery, laser radar detection etc.Meanwhile, utilize this wave band of laser to the characteristic absorpting spectruming line of each gas molecule, the medical diagnosis of Trace gas detection, Atmospheric Survey and breath can also be used it for.But the laser of this wave band is mainly produced by free electron laser and quantum cascade laser at present, its extensive use of the price limit of the volume that such laser is huge or costliness.Utilize optical parametric oscillator (OpticalParametricOscillator, OPO) produce mid-infrared laser because of its compact conformation, cost low, tuning wide, export the advantages such as energy is larger and be widely adopted.But there is the deficiencies such as nonlinear crystal easy damaged, conversion efficiency is low, output energy is little, beam quality is poor, wavelength tuning range is little at present.
Summary of the invention
The technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, provides a kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings, to solve the problems such as current conversion efficiency is low, output energy is little.
The technology of the present invention solution: a kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings, comprises solid state laser, optical isolator, OPO resonant cavity, the BaGa as optical parametric oscillator OPO pumping source
4se
7crystal and filter, OPO resonant cavity is by inputting mirror and outgoing mirror is formed; The pump direction exported along solid state laser places optical isolator, input mirror, BaGa successively
4se
7crystal, outgoing mirror and filter; Described input mirror, outgoing mirror and BaGa
4se
7the logical light face of crystal is parallel mutually, and each logical light face is perpendicular to the output beam of solid state laser; The pump light that solid state laser exports, by after optical isolator, enters into the input mirror of OPO resonant cavity, reenters and be mapped to BaGa
4se
7produce the parameteric light of two wavelength after crystal, the parameteric light of generation vibrates thus energy is amplified in OPO chamber, from outgoing mirror Output of laser, then by the remaining pump light of filter plate filtering and unwanted wavelength, and the optical maser wavelength needed for reservation.
The Q-switch laser that described solid state laser can produce nanosecond pulse exports, and output wavelength 2.7-3 micron waveband, Output of laser polarization state is linear polarization, pulse duration 10-300ns, repetition rate 1-100kHz.
The polarization direction that described solid state laser exports is perpendicular to direction of beam propagation and BaGa
4se
7the plane that the optical axis of crystal is formed, by turning BaGa at this plane internal rotation
4se
7crystal changes the angle of its optical axis and incident beam, can realize the tuning of output wavelength, obtains wavelength laser output arbitrarily in 4-15 micron waveband.
The gain media of described solid state laser laser adopts the gain media mixing Er, comprises Er:YAG, Er:YLF, Er:YSGG, Cr, Er:YSGG etc.
Described optical isolator end face is coated with 3 micron waveband anti-reflection films.
Input mirror and the outgoing mirror of described OPO resonant cavity are coated with deielectric-coating, and input mirror is coated with 3 micron waveband anti-reflection films, 4-15 micron highly reflecting films (being more than or equal to 99%); Outgoing mirror is coated with 3-15 micron waveband and is coated with reflectivity 1-99% reflectance coating.
Described OPO resonant cavity can adopt the single resonance mode of a wave resonance, also can adopt the double resonance mode that two wavelength vibrate simultaneously.Optical parameter conversion can produce the laser of two wavelength, and during single resonant oscillator, outgoing mirror one of them wavelength to the parameter laser produced has certain reflectivity, the complete transmission of another wavelength; During double resonance vibration, outgoing mirror both has certain reflectivity to the parameter laser produced.
Described nonlinear crystal adopts BaGa
4se
7crystal, at the high permeability (being more than or equal to 98%) of 1-15 micrometer range, and up to 557MW/cm
2the damage threshold of (testing laser is wavelength 1064nm, pulsewidth 5ns), can bear higher laser energy, obtain the output of more macro-energy at long wave.
The Q-switch laser that described solid state laser can produce nanosecond pulse exports, and output wavelength 2.7-3 micron waveband, Output of laser polarization state is linear polarization, pulse duration 10-300ns, repetition rate 1-100kHz.
Described filter is coated with 3-6 micron waveband 45 ° of total reflection films, 6-15 micron 45 ° of anti-reflection films, and for the remaining pump light of filtering and unwanted optical maser wavelength, the optical maser wavelength needed for reservation, also can adjust the parameter of plated film according to actual needs.
The present invention's advantage is compared with prior art: in optical parameter, transfer process can produce the laser of two kinds of different wave lengths, and long wavelength is called ideler frequency light, and short wavelength is called flashlight.The Laser output of usual acquisition long wave is that people more need.In theory, optical maser wavelength and the optical parameter output wavelength of pumping source are more close, the conversion efficiency of photon energy is higher, and the present invention proposes the solid state laser of employing 3 micron waveband as pumping source, and first conversion efficiency is about 3 times that adopt common 1 micron wave length laser; Secondly, solid state laser pump-coupling, avoids the conversion adopting cascade OPO, has higher beam quality.The present invention proposes the BaGa adopting a kind of excellent in optical properties
4se
7crystal is as the nonlinear crystal of OPO, and this crystal has high damage threshold, can bear higher pump energy and obtain larger output energy, and wide transparency range can obtain the Laser output of more wide spectral range.Particularly for the Laser output of 8-15 micron, the present invention has larger advantage in above-mentioned.
Accompanying drawing explanation
Fig. 1 is a kind of basic structure schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, optimal way of the present invention is described in further detail.
As shown in Figure 1, the present invention is by 3 micron waveband solid state lasers 1 of OPO pumping source, optical isolator 2, input mirror 3, BaGa
4se
7crystal 4, outgoing mirror 5 and filter 6 are formed, and input mirror 3 and outgoing mirror 5 form the resonant cavity of OPO.Input mirror 3, BaGa is placed successively along pumping source laser 1 Output of laser direction
4se
7crystal 4, outgoing mirror 5, described input and output mirror and BaGa
4se
7it is parallel mutually that crystal leads to light face, and each logical light face is perpendicular to pumping source laser 1 output beam.
The pump light that pumping source laser 1 exports, by after optical isolator 2, enters into the OPO resonant cavity of input mirror 3 and outgoing mirror 5 formation, incides BaGa
4se
7the parameteric light of two wavelength is produced after crystal 4.The polarization direction of pump beam is perpendicular to direction of beam propagation and BaGa
4se
7the plane that the optical axis of crystal is formed, by turning BaGa at this plane internal rotation
4se
7crystal 4 changes the angle of its optical axis and incident beam, can realize the tuning of output wavelength, obtains wavelength laser output arbitrarily in 4-15 micron waveband.The parameteric light produced vibrates thus energy is amplified in OPO resonant cavity, from outgoing mirror 5 Output of laser, then by the remaining pump light of filter 6 filtering and unwanted wavelength, and the optical maser wavelength of the long wave needed for reservation.
There is provided above embodiment to be only used to describe object of the present invention, and do not really want to limit the scope of the invention.Scope of the present invention is defined by the following claims.Do not depart from spirit of the present invention and principle and the various equivalent substitutions and modifications made, all should contain within the scope of the present invention.
Claims (9)
1. a selenium gallium barium optical parametric oscillator for 3 micron waveband solid state laser pumpings, is characterized in that: comprise solid state laser, optical isolator, OPO resonant cavity, the BaGa as optical parametric oscillator OPO pumping source
4se
7crystal and filter, OPO resonant cavity is by inputting mirror and outgoing mirror is formed; The pump direction exported along solid state laser places optical isolator, input mirror, BaGa successively
4se
7crystal, outgoing mirror and filter; Described input mirror, outgoing mirror and BaGa
4se
7the logical light face of crystal is parallel mutually, and each logical light face is perpendicular to the output beam of solid state laser; The pump light that solid state laser exports, by after optical isolator, enters into the input mirror of OPO resonant cavity, reenters and be mapped to BaGa
4se
7produce the parameteric light of two wavelength after crystal, the parameteric light of generation vibrates thus energy is amplified in OPO chamber, from outgoing mirror Output of laser, then by the remaining pump light of filter plate filtering and unwanted wavelength, and the optical maser wavelength needed for reservation.
2. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, it is characterized in that: the Q-switch laser that described solid state laser can produce nanosecond pulse exports, output wavelength 2.7-3 micron waveband, Output of laser polarization state is linear polarization, pulse duration 10-300ns, repetition rate 1-100kHz.
3. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, is characterized in that: the polarization direction that described solid state laser exports is perpendicular to direction of beam propagation and BaGa
4se
7the plane that the optical axis of crystal is formed, by turning BaGa at this plane internal rotation
4se
7crystal changes the angle of its optical axis and incident beam, can realize the tuning of output wavelength, obtains wavelength laser output arbitrarily in 4-15 micron waveband.
4. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, it is characterized in that: the gain media of described solid state laser laser adopts the gain media mixing Er, comprise Er:YAG, Er:YLF, Er:YSGG, Cr, Er:YSGG.
5. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, is characterized in that: described optical isolator end face is coated with 3 micron waveband anti-reflection films.
6. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, it is characterized in that: input mirror and the outgoing mirror of described OPO resonant cavity are coated with deielectric-coating, input mirror is coated with 3 micron waveband anti-reflection films, 4-15 micron is more than or equal to 99% highly reflecting films; Outgoing mirror is coated with 3-15 micron waveband and is coated with reflectivity 1-99% reflectance coating.
7. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, is characterized in that: described OPO resonant cavity adopts the single resonance mode of a wave resonance, or the double resonance mode adopting two wavelength simultaneously to vibrate.
8. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, is characterized in that: described BaGa
4se
7crystal, at the high permeability of 1-15 micrometer range, and up to 557MW/cm
2damage threshold, higher laser energy can be born, obtain the output of more macro-energy at long wave.
9. the selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings according to claim 1, is characterized in that: described filter is coated with 3-6 micron waveband 45 ° of total reflection films, 6-15 micron 45 ° of anti-reflection films.
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Cited By (6)
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| CN105552708A (en) * | 2016-03-03 | 2016-05-04 | 哈尔滨工业大学 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
| CN105633777A (en) * | 2016-03-03 | 2016-06-01 | 哈尔滨工业大学 | Selenium-gallium-barium optical parameter oscillator for quickly tuning output wavelength |
| JP2018031811A (en) * | 2016-08-22 | 2018-03-01 | 有限会社岡本光学加工所 | Dual-wavelength simultaneous oscillation type infrared optical parametric oscillation device |
| CN112234428A (en) * | 2020-11-11 | 2021-01-15 | 长春理工大学 | Three-wavelength double-end comprehensive pumping Cr Er YSGG acousto-optic Q-switched laser and absorption rate enhancing method |
| CN113363801A (en) * | 2021-05-22 | 2021-09-07 | 中国科学院理化技术研究所 | High-efficiency middle and far infrared laser device |
| CN115548855A (en) * | 2022-09-22 | 2022-12-30 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid-far infrared laser based on selenium-gallium-barium crystal |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552708A (en) * | 2016-03-03 | 2016-05-04 | 哈尔滨工业大学 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
| CN105633777A (en) * | 2016-03-03 | 2016-06-01 | 哈尔滨工业大学 | Selenium-gallium-barium optical parameter oscillator for quickly tuning output wavelength |
| JP2018031811A (en) * | 2016-08-22 | 2018-03-01 | 有限会社岡本光学加工所 | Dual-wavelength simultaneous oscillation type infrared optical parametric oscillation device |
| CN112234428A (en) * | 2020-11-11 | 2021-01-15 | 长春理工大学 | Three-wavelength double-end comprehensive pumping Cr Er YSGG acousto-optic Q-switched laser and absorption rate enhancing method |
| CN113363801A (en) * | 2021-05-22 | 2021-09-07 | 中国科学院理化技术研究所 | High-efficiency middle and far infrared laser device |
| CN115548855A (en) * | 2022-09-22 | 2022-12-30 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid-far infrared laser based on selenium-gallium-barium crystal |
| CN115548855B (en) * | 2022-09-22 | 2023-10-20 | 中国人民解放军国防科技大学 | Method and device for generating dual-band middle-far infrared laser based on selenium-gallium-barium crystal |
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