CN105552708A - Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals - Google Patents
Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals Download PDFInfo
- Publication number
- CN105552708A CN105552708A CN201610121501.4A CN201610121501A CN105552708A CN 105552708 A CN105552708 A CN 105552708A CN 201610121501 A CN201610121501 A CN 201610121501A CN 105552708 A CN105552708 A CN 105552708A
- Authority
- CN
- China
- Prior art keywords
- dichroic sheet
- microns
- deielectric
- coating
- barium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a broad band long wave infrared solid laser device based on selenium- gallium- barium crystals relating to the broad band long wave infrared solid laser device based on selenium- gallium- barium crystals. Through the invention, the problems that the existing light parameter oscillator is easily damaged in nonlinear crystal and little in output energy are solved. The device is composed of a pumping source, a coupling mirror, an OPO input mirror, a ZGP crystal, an OPO output mirror, a first bicolour sheet, a second bicolour sheet, a focusing mirror, a third bicolour sheet, a fourth bicolour and selenium- gallium- barium crystals. The parameter light generated by the broad band long wave infrared solid laser device based on selenium- gallium- barium crystals of the invention is used as the characteristic absorption spectral line of every gas molecule and also can be used for trace gas detection, atmosphere detection and exhaled air medical diagnosis.
Description
Technical field
The present invention relates to a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium.
Background technology
LONG WAVE INFRARED 8 ~ 15 micron waveband laser has important application in fields such as biologic medical, spectroscopy, Atmospheric Survey, electrooptical countermeasuress.In biologic medical field, the light source of this wave band is the important tool of Study on Protein folding kinetics, biomolecule identification, high accuracy Minimally Invasive Surgery, laser radar detection etc.Meanwhile, utilize this wave band of laser to the characteristic absorpting spectruming line of each gas molecule, the medical diagnosis of Trace gas detection, Atmospheric Survey and breath can also be used it for.Optical parametric oscillator produces the effective way of mid-infrared laser, have compact conformation, cost low, tuning wide, export the advantages such as energy is larger and be widely adopted.But there is nonlinear crystal easy damaged at present and wait deficiency with output energy is little.
Summary of the invention
The present invention will solve existing optical parametric oscillator to there is nonlinear crystal easy damaged and export the little problem of energy, and provides a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium.
A kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium of the present invention is inputted mirror, ZGP crystal, OPO outgoing mirror, dichroic sheet group and selenium gallium crystal of barium formed by pumping source, coupling mirror, OPO; Set gradually pumping source along pumping light path, coupling mirror, OPO input mirror, ZGP crystal, OPO outgoing mirror, dichroic sheet group and selenium gallium crystal of barium; Described dichroic sheet group is made up of the first dichroic sheet, the second dichroic sheet, focus lamp, the 3rd dichroic sheet and the 4th dichroic sheet, described first dichroic sheet and pump light incident direction at 45 °, the normal of described first dichroic sheet and the normal of the 4th dichroic sheet perpendicular, and described first dichroic sheet and the 4th dichroic sheet bottom are on the same line; Described second dichroic sheet is parallel with the first dichroic sheet and be arranged on immediately below the first dichroic sheet, and described 3rd dichroic sheet is parallel with the 4th dichroic sheet and be arranged on immediately below the 4th dichroic sheet, is provided with focus lamp between described second dichroic sheet and the 3rd dichroic sheet; The emergent light of OPO outgoing mirror incides the first dichroic sheet, the emergent light of described first dichroic sheet incides on the 4th dichroic sheet, the reverberation of described first dichroic sheet incides the second dichroic sheet, the reverberation of described second dichroic sheet incides focus lamp, the emergent light of described focus lamp incides the 3rd dichroic sheet, and the reverberation of described 3rd dichroic sheet incides on the 4th dichroic sheet.
Inventive principle: coupling pump light is entered OPO crystal by coupling mirror, OPO resonant cavity is by inputting mirror and outgoing mirror is formed, ZGP crystal produces LONG WAVE INFRARED parameteric light, the effect of dichroic sheet is the remaining pump light of reflection and flashlight and through ideler frequency light, flashlight injects selenium gallium crystal of barium after dichroic sheet and focus lamp, ideler frequency light injects selenium gallium crystal of barium after dichroic sheet, selenium gallium crystal of barium produces the parameteric light different with ideler frequency optical wavelength from flashlight, the laser of final multiple wavelength, simultaneously from the injection of selenium gallium crystal of barium, forms broad band LONG WAVE INFRARED laser.
The invention has the beneficial effects as follows:
The present invention is without the need to extra tuning block, broad band LONG WAVE INFRARED Solid State Laser can be realized export, utilize two optical frequency conversion processes to improve energy conversion efficiency simultaneously, realize higher-energy Laser output, avoid the element damage problem caused by high pumping energy.
Accompanying drawing explanation
Fig. 1 is a kind of broad band LONG WAVE INFRARED solid-state laser apparatus structural representation based on selenium gallium crystal of barium.
Embodiment
Embodiment one: as shown in Figure 1, a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium of present embodiment is inputted mirror 3, ZGP crystal 4, OPO outgoing mirror 5, dichroic sheet group and selenium gallium crystal of barium 11 formed by pumping source 1, coupling mirror 2, OPO; Set gradually pumping source 1 along pumping light path, coupling mirror 2, OPO input mirror 3, ZGP crystal 4, OPO outgoing mirror 5, dichroic sheet group and selenium gallium crystal of barium 11; Described dichroic sheet group is made up of the first dichroic sheet 6, second dichroic sheet 7, focus lamp 8, the 3rd dichroic sheet 9 and the 4th dichroic sheet 10, described first dichroic sheet 6 is at 45 ° with pump light incident direction, the normal of described first dichroic sheet 6 and the normal of the 4th dichroic sheet 10 perpendicular, and described first dichroic sheet 6 and the 4th dichroic sheet 10 bottom are on the same line; Described second dichroic sheet 7 is parallel with the first dichroic sheet 6 and be arranged on immediately below the first dichroic sheet 6, described 3rd dichroic sheet 9 is parallel with the 4th dichroic sheet 10 and be arranged on immediately below the 4th dichroic sheet 10, is provided with focus lamp 8 between described second dichroic sheet 7 and the 3rd dichroic sheet 9; The emergent light of OPO outgoing mirror 5 incides the first dichroic sheet 6, the emergent light of described first dichroic sheet 6 incides on the 4th dichroic sheet 10, the reverberation of described first dichroic sheet 6 incides the second dichroic sheet 7, the reverberation of described second dichroic sheet 7 incides focus lamp 8, the emergent light of described focus lamp 8 incides the 3rd dichroic sheet 9, and the reverberation of described 3rd dichroic sheet 9 incides on the 4th dichroic sheet 10.
Embodiment two: present embodiment and embodiment one unlike: described pumping source 1 is 2.09 microns of solid state lasers of q-operation, 2.09 microns of solid state laser Output of lasers of described q-operation are linear polarization, pulse repetition frequency is 100Hz ~ 100000Hz, and pulse duration is 10ns ~ 100ns.Other are identical with embodiment one.
Embodiment three: present embodiment and embodiment one or two unlike: described OPO inputs mirror 3, ZGP crystal 4 and OPO outgoing mirror 5 and forms ZGP optical parametric oscillator, and it is the flashlight of 2.8 microns and the ideler frequency light of 8.0 microns that described ZGP optical parametric oscillator produces wavelength; Described OPO inputs mirror 3 and OPO outgoing mirror 5 surface is all coated with deielectric-coating, and described deielectric-coating is greater than 97% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity, is greater than 99% to 8.0 microns of parameteric light transmitances; The length of described ZGP crystal 4 is that two end faces of 25mm, ZGP crystal 4 are all coated with the deielectric-coating being greater than 99% to pump light and parameteric light transmitance.Other are identical with embodiment one or two.
Embodiment four: one of present embodiment and embodiment one to three unlike the both ends of the surface of: described coupling mirror 2 be coated with 2.09 microns of transmitances be greater than 99% the saturating deielectric-coating of height.Other are identical with one of embodiment one to three.
Embodiment five: one of present embodiment and embodiment one to four unlike: described first dichroic sheet 6 surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light reflectivity, 99% is greater than to 2.8 microns of parameteric light reflectivity, 99% is greater than to 8.0 microns of parameteric light transmitances.Other are identical with one of embodiment one to four.
Embodiment six: one of present embodiment and embodiment one to five unlike: described second dichroic sheet 7 surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity.Other are identical with one of embodiment one to five.
Embodiment seven: one of present embodiment and embodiment one to six unlike: described 3rd dichroic sheet 9 surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity.Other are identical with one of embodiment one to six.
Embodiment eight: one of present embodiment and embodiment one to seven unlike: described 4th dichroic sheet 10 surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light reflectivity, 99% is greater than to 2.8 microns of parameteric light reflectivity, 99% is greater than to 8.0 microns of parameteric light transmitances.Other are identical with one of embodiment one to seven.
Embodiment nine: one of present embodiment and embodiment one to eight unlike: two end faces of described focus lamp 8 are all coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.8 microns of parameteric light transmitances.Other are identical with one of embodiment one to eight.
Embodiment ten: one of present embodiment and embodiment one to nine unlike: the length of described selenium gallium crystal of barium 11 is 40mm, two end faces are all coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.8 microns of parameteric light transmitances, is greater than 99% to 8.0 microns of parameteric light transmitances.Other are identical with one of embodiment one to nine.
Following examples are adopted to verify beneficial effect of the present invention:
Embodiment one: a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium is inputted mirror 3, ZGP crystal 4, OPO outgoing mirror 5, dichroic sheet group and selenium gallium crystal of barium 11 formed by pumping source 1, coupling mirror 2, OPO; Set gradually pumping source 1 along pumping light path, coupling mirror 2, OPO input mirror 3, ZGP crystal 4, OPO outgoing mirror 5, dichroic sheet group and selenium gallium crystal of barium 11; Described dichroic sheet group is made up of the first dichroic sheet 6, second dichroic sheet 7, focus lamp 8, the 3rd dichroic sheet 9 and the 4th dichroic sheet 10, described first dichroic sheet 6 is at 45 ° with pump light incident direction, the normal of described first dichroic sheet 6 and the normal of the 4th dichroic sheet 10 perpendicular, and described first dichroic sheet 6 and the 4th dichroic sheet 10 bottom are on the same line; Described second dichroic sheet 7 is parallel with the first dichroic sheet 6 and be arranged on immediately below the first dichroic sheet 6, described 3rd dichroic sheet 9 is parallel with the 4th dichroic sheet 10 and be arranged on immediately below the 4th dichroic sheet 10, is provided with focus lamp 8 between described second dichroic sheet 7 and the 3rd dichroic sheet 9; The emergent light of OPO outgoing mirror 5 incides the first dichroic sheet 6, the emergent light of described first dichroic sheet 6 incides on the 4th dichroic sheet 10, the reverberation of described first dichroic sheet 6 incides the second dichroic sheet 7, the reverberation of described second dichroic sheet 7 incides focus lamp 8, the emergent light of described focus lamp 8 incides the 3rd dichroic sheet 9, and the reverberation of described 3rd dichroic sheet 9 incides on the 4th dichroic sheet 10.Described pumping source 1 is 2.09 microns of solid state lasers of q-operation, and 2.09 microns of solid state laser Output of lasers of described q-operation are linear polarization, and pulse repetition frequency is 100Hz ~ 100000Hz, and pulse duration is 10ns ~ 100ns.Described OPO inputs mirror 3, ZGP crystal 4 and OPO outgoing mirror 5 and forms ZGP optical parametric oscillator, and it is the flashlight of 2.8 microns and the ideler frequency light of 8.0 microns that described ZGP optical parametric oscillator produces wavelength; Described OPO inputs mirror 3 and OPO outgoing mirror 5 surface is all coated with deielectric-coating, and described deielectric-coating is greater than 97% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity, is greater than 99% to 8.0 microns of parameteric light transmitances; The length of described ZGP crystal 4 is that two end faces of 25mm, ZGP crystal 4 are all coated with the deielectric-coating being greater than 99% to pump light and parameteric light transmitance.The both ends of the surface of described coupling mirror 2 be coated with 2.09 microns of transmitances be greater than 99% the saturating deielectric-coating of height.Described first dichroic sheet 6 surface is coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.09 microns of pump light reflectivity, is greater than 99% to 2.8 microns of parameteric light reflectivity, is greater than 99% to 8.0 microns of parameteric light transmitances.Described second dichroic sheet 7 surface is coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity.Described 3rd dichroic sheet 9 surface is coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity.Described 4th dichroic sheet 10 surface is coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.09 microns of pump light reflectivity, is greater than 99% to 2.8 microns of parameteric light reflectivity, is greater than 99% to 8.0 microns of parameteric light transmitances.Two end faces of described focus lamp 8 are all coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.8 microns of parameteric light transmitances.The length of described selenium gallium crystal of barium 11 is 40mm, and two end faces are all coated with deielectric-coating, and described deielectric-coating is greater than 99% to 2.8 microns of parameteric light transmitances, is greater than 99% to 8.0 microns of parameteric light transmitances.
Described in the present embodiment, selenium gallium crystal of barium 11 produces the parameteric light of 4.3 microns and 8.0 microns.
Claims (10)
1., based on a broad band LONG WAVE INFRARED solid-state laser apparatus for selenium gallium crystal of barium, it is characterized in that the broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium is inputted mirror (3), ZGP crystal (4), OPO outgoing mirror (5), dichroic sheet group and selenium gallium crystal of barium (11) formed by pumping source (1), coupling mirror (2), OPO; Pumping source (1), coupling mirror (2), OPO input mirror (3), ZGP crystal (4), OPO outgoing mirror (5), dichroic sheet group and selenium gallium crystal of barium (11) is set gradually along pumping light path; Described dichroic sheet group is made up of the first dichroic sheet (6), the second dichroic sheet (7), focus lamp (8), the 3rd dichroic sheet (9) and the 4th dichroic sheet (10), described first dichroic sheet (6) is at 45 ° with pump light incident direction, the normal of described first dichroic sheet (6) and the normal of the 4th dichroic sheet (10) perpendicular, and described first dichroic sheet (6) and the 4th dichroic sheet (10) bottom are on the same line; Described second dichroic sheet (7) is parallel with the first dichroic sheet (6) and be arranged on immediately below the first dichroic sheet (6), described 3rd dichroic sheet (9) is parallel with the 4th dichroic sheet (10) and be arranged on immediately below the 4th dichroic sheet (10), is provided with focus lamp (8) between described second dichroic sheet (7) and the 3rd dichroic sheet (9); The emergent light of OPO outgoing mirror (5) incides the first dichroic sheet (6), the emergent light of described first dichroic sheet (6) incides on the 4th dichroic sheet (10), the reverberation of described first dichroic sheet (6) incides the second dichroic sheet (7), the reverberation of described second dichroic sheet (7) incides focus lamp (8), the emergent light of described focus lamp (8) incides the 3rd dichroic sheet (9), and the reverberation of described 3rd dichroic sheet (9) incides on the 4th dichroic sheet (10).
2. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that described pumping source (1) is 2.09 microns of solid state lasers of q-operation, 2.09 microns of solid state laser Output of lasers of described q-operation are linear polarization, pulse repetition frequency is 100Hz ~ 100000Hz, and pulse duration is 10ns ~ 100ns.
3. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that described OPO inputs mirror (3), ZGP crystal (4) and OPO outgoing mirror (5) composition ZGP optical parametric oscillator, it is the flashlight of 2.8 microns and the ideler frequency light of 8.0 microns that described ZGP optical parametric oscillator produces wavelength; Described OPO inputs mirror (3) and OPO outgoing mirror (5) surface is all coated with deielectric-coating, described deielectric-coating is greater than 97% to 2.09 microns of pump light transmitances, 99% is greater than to 2.8 microns of parameteric light reflectivity, 99% is greater than to 8.0 microns of parameteric light transmitances; The length of described ZGP crystal (4) is that two end faces of 25mm, ZGP crystal (4) are all coated with the deielectric-coating being greater than 99% to pump light and parameteric light transmitance.
4. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that the both ends of the surface of described coupling mirror (2) be coated with 2.09 microns of transmitances be greater than 99% the saturating deielectric-coating of height.
5. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that described first dichroic sheet (6) surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light reflectivity, 99% is greater than to 2.8 microns of parameteric light reflectivity, 99% is greater than to 8.0 microns of parameteric light transmitances.
6. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that described second dichroic sheet (7) surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity.
7. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that described 3rd dichroic sheet (9) surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light transmitances, is greater than 99% to 2.8 microns of parameteric light reflectivity.
8. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that described 4th dichroic sheet (10) surface is coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.09 microns of pump light reflectivity, 99% is greater than to 2.8 microns of parameteric light reflectivity, 99% is greater than to 8.0 microns of parameteric light transmitances.
9. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, it is characterized in that two end faces of described focus lamp (8) are all coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.8 microns of parameteric light transmitances.
10. a kind of broad band LONG WAVE INFRARED solid-state laser apparatus based on selenium gallium crystal of barium according to claim 1, the length that it is characterized in that described selenium gallium crystal of barium (11) is 40mm, two end faces are all coated with deielectric-coating, described deielectric-coating is greater than 99% to 2.8 microns of parameteric light transmitances, is greater than 99% to 8.0 microns of parameteric light transmitances.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121501.4A CN105552708A (en) | 2016-03-03 | 2016-03-03 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121501.4A CN105552708A (en) | 2016-03-03 | 2016-03-03 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105552708A true CN105552708A (en) | 2016-05-04 |
Family
ID=55831740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610121501.4A Pending CN105552708A (en) | 2016-03-03 | 2016-03-03 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552708A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109038200A (en) * | 2018-08-10 | 2018-12-18 | 哈尔滨工业大学 | The medium-wave infrared laser of high brightness |
| CN111244743A (en) * | 2020-01-17 | 2020-06-05 | 哈尔滨工业大学 | Dual-band laser for realizing medium-long wave infrared fast switching output based on electro-optic crystal |
| CN115548855A (en) * | 2022-09-22 | 2022-12-30 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid-far infrared laser based on selenium-gallium-barium crystal |
| CN115541521A (en) * | 2022-11-03 | 2022-12-30 | 哈尔滨翰奥科技有限公司 | Method for measuring concentration of multiple gases by infrared band laser |
| CN115832844A (en) * | 2022-09-22 | 2023-03-21 | 中国人民解放军国防科技大学 | Method and device for generating middle and far infrared supercontinuum laser based on selenium-gallium-barium crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098579A (en) * | 2015-08-24 | 2015-11-25 | 哈尔滨工业大学 | Novel far-infrared 8 mu m laser amplification device |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| CN105226491A (en) * | 2015-10-29 | 2016-01-06 | 中国科学院合肥物质科学研究院 | A kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings |
-
2016
- 2016-03-03 CN CN201610121501.4A patent/CN105552708A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098579A (en) * | 2015-08-24 | 2015-11-25 | 哈尔滨工业大学 | Novel far-infrared 8 mu m laser amplification device |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| CN105226491A (en) * | 2015-10-29 | 2016-01-06 | 中国科学院合肥物质科学研究院 | A kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings |
Non-Patent Citations (1)
| Title |
|---|
| 王礼等: "2.09μm纳秒钬激光抽运的磷锗锌光参量振荡器", 《中国激光》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109038200A (en) * | 2018-08-10 | 2018-12-18 | 哈尔滨工业大学 | The medium-wave infrared laser of high brightness |
| CN109038200B (en) * | 2018-08-10 | 2019-06-11 | 哈尔滨工业大学 | The medium-wave infrared laser of high brightness |
| CN111244743A (en) * | 2020-01-17 | 2020-06-05 | 哈尔滨工业大学 | Dual-band laser for realizing medium-long wave infrared fast switching output based on electro-optic crystal |
| CN111244743B (en) * | 2020-01-17 | 2021-03-23 | 哈尔滨工业大学 | Dual-band laser for realizing medium-long wave infrared fast switching output based on electro-optic crystal |
| CN115548855A (en) * | 2022-09-22 | 2022-12-30 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid-far infrared laser based on selenium-gallium-barium crystal |
| CN115832844A (en) * | 2022-09-22 | 2023-03-21 | 中国人民解放军国防科技大学 | Method and device for generating middle and far infrared supercontinuum laser based on selenium-gallium-barium crystal |
| CN115548855B (en) * | 2022-09-22 | 2023-10-20 | 中国人民解放军国防科技大学 | Method and device for generating dual-band middle-far infrared laser based on selenium-gallium-barium crystal |
| CN115832844B (en) * | 2022-09-22 | 2024-02-09 | 中国人民解放军国防科技大学 | Method and device for generating mid-far infrared supercontinuum laser based on selenium-gallium-barium crystal |
| CN115541521A (en) * | 2022-11-03 | 2022-12-30 | 哈尔滨翰奥科技有限公司 | Method for measuring concentration of multiple gases by infrared band laser |
| US11841320B1 (en) | 2022-11-03 | 2023-12-12 | Xinjiang Technical Institute Of Physics And Chemistry, Chinese Academy Of Sciences | Method for measuring concentrations of multiple gases by using infrared band laser light |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105552708A (en) | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals | |
| JP4099192B2 (en) | Laser light source | |
| CN105098579B (en) | 8 μm of laser amplification devices of new far infrared | |
| CN103259177A (en) | Intermediate infrared optical parametric oscillator based on four-mirror ring-shaped resonant cavity | |
| WO2009093425A1 (en) | Wide-band optical amplifier, optical pulse generator, and optical instrument | |
| CN105226491A (en) | A kind of selenium gallium barium optical parametric oscillator of 3 micron waveband solid state laser pumpings | |
| CN201518383U (en) | Mid-IR coherent optical source apparatus | |
| ES2579484T3 (en) | Nonlinear optical frequency converter as well as its uses | |
| CN110048298B (en) | Light and small-sized long-wave infrared laser generating device | |
| CN105633777A (en) | Selenium-gallium-barium optical parameter oscillator for quickly tuning output wavelength | |
| CN105552704A (en) | Continuous width tuning device for single-frequency infrared laser light source | |
| CN105159008B (en) | The application of niobic acid gallium lanthanum crystal device for non-linear optical of infrared band as in | |
| JP4568313B2 (en) | Laser light source | |
| Niu et al. | High-efficiency Ho: YAP pulse laser pumped at 1989 nm | |
| He et al. | Repetitively mode-locked cavity-enhanced absorption spectroscopy (RML-CEAS) for near-infrared gas sensing | |
| Wang et al. | Passively Q-switched operation of a Tm, Ho: LuVO4 laser with a graphene saturable absorber | |
| CN105896261A (en) | All-solid-state wide tuning long wave infrared laser source | |
| CN109787077A (en) | Tunable multi-wavelength femtosecond light comb light source based on raman gain fiber | |
| CN113078536B (en) | Lateral pumping Nd-MgO-PPLN mid-infrared laser and double-prism wavelength control method thereof | |
| JP2007316676A (en) | Laser light source | |
| CN103956644A (en) | Continuous ultraviolet laser based on periodical polarization reversal crystal straight cavity | |
| CN201549762U (en) | Intermediate infrared laser system | |
| CN1119846C (en) | Ultrashort-pulse chirp photoparametric laser device | |
| Lopez et al. | LED-pumped Er: Cr: YSGG light sources | |
| Gold et al. | Continuous-wave molecular modulation using a high-finesse cavity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160504 |
|
| WD01 | Invention patent application deemed withdrawn after publication |