CN105552708A - Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals - Google Patents
Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals Download PDFInfo
- Publication number
- CN105552708A CN105552708A CN201610121501.4A CN201610121501A CN105552708A CN 105552708 A CN105552708 A CN 105552708A CN 201610121501 A CN201610121501 A CN 201610121501A CN 105552708 A CN105552708 A CN 105552708A
- Authority
- CN
- China
- Prior art keywords
- dichroic sheet
- microns
- crystal
- barium
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 229910052788 barium Inorganic materials 0.000 title claims abstract description 29
- 239000007787 solid Substances 0.000 title claims 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 13
- 238000010168 coupling process Methods 0.000 claims abstract description 13
- 238000005859 coupling reaction Methods 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 229910052711 selenium Inorganic materials 0.000 claims description 16
- 239000011669 selenium Substances 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 7
- 238000001579 optical reflectometry Methods 0.000 claims 7
- 230000010287 polarization Effects 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 6
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000003745 diagnosis Methods 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 description 21
- YWDGEUIDOIIHTK-UHFFFAOYSA-N selanylidenebarium Chemical compound [Ba]=[Se] YWDGEUIDOIIHTK-UHFFFAOYSA-N 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000002324 minimally invasive surgery Methods 0.000 description 1
- 230000012846 protein folding Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
一种基于硒镓钡晶体的宽谱带长波红外固体激光装置，它涉及一种基于硒镓钡晶体的宽谱带长波红外固体激光装置。本发明是要解决现有光参量振荡器存在非线性晶体易损伤和输出能量小的问题。装置由泵浦源、耦合镜、OPO输入镜、ZGP晶体、OPO输出镜、第一二色片、第二二色片、聚焦镜、第三二色片、第四二色片和硒镓钡晶体组成。本发明基于硒镓钡晶体的宽谱带长波红外固体激光装置产生的参量光用于对各气体分子的特征吸收谱线，还能将其用于痕量气体检测、大气探测及呼出气体的医疗诊断。
The invention discloses a broadband long-wave infrared solid-state laser device based on gallium-selenium barium crystal, which relates to a wide-band long-wave infrared solid-state laser device based on gallium-selenium barium crystal. The invention aims to solve the problems that the nonlinear crystal is easily damaged and the output energy is small in the existing optical parametric oscillator. The device consists of a pump source, a coupling mirror, an OPO input mirror, a ZGP crystal, an OPO output mirror, a first dichroic film, a second dichroic film, a focusing mirror, a third dichromatic film, a fourth dichromatic film and gallium selenium barium crystal composition. The parametric light generated by the wide-band long-wave infrared solid-state laser device based on the selenium-gallium-barium crystal is used for the characteristic absorption lines of each gas molecule, and it can also be used for trace gas detection, atmospheric detection and exhaled gas medical treatment diagnosis.
Description
技术领域technical field
本发明涉及一种基于硒镓钡晶体的宽谱带长波红外固体激光装置。The invention relates to a wide-band long-wave infrared solid-state laser device based on selenium-gallium-barium crystal.
背景技术Background technique
长波红外8～15微米波段激光在生物医疗、光谱学、大气探测、光电对抗等领域有着重要的应用。在生物医疗领域，该波段的光源是研究蛋白质折叠动力学、生物分子识别、高精度微创手术、激光雷达探测等的重要工具。同时，利用该波段激光对各气体分子的特征吸收谱线，还能将其用于痕量气体检测、大气探测及呼出气体的医疗诊断。光参量振荡器是产生中红外激光的有效途径，具有结构紧凑、成本低、调谐宽、输出能量较大等优点而被广泛采用。但目前存在非线性晶体易损伤和输出能量小等不足。Long-wave infrared 8-15 micron band lasers have important applications in the fields of biomedicine, spectroscopy, atmospheric detection, and photoelectric countermeasures. In the field of biomedicine, light sources in this band are important tools for studying protein folding dynamics, biomolecular recognition, high-precision minimally invasive surgery, and lidar detection. At the same time, using the characteristic absorption lines of the laser in this band for each gas molecule, it can also be used for trace gas detection, atmospheric detection and medical diagnosis of exhaled gas. Optical parametric oscillators are an effective way to generate mid-infrared lasers, and are widely used due to their advantages of compact structure, low cost, wide tuning, and large output energy. But at present, there are disadvantages such as easy damage of nonlinear crystal and low output energy.
发明内容Contents of the invention
本发明是要解决现有光参量振荡器存在非线性晶体易损伤和输出能量小的问题，而提供一种基于硒镓钡晶体的宽谱带长波红外固体激光装置。The present invention aims to solve the problems of the existing optical parametric oscillator that the nonlinear crystal is easily damaged and the output energy is small, and provides a wide-band long-wave infrared solid-state laser device based on the selenium-gallium-barium crystal.
本发明一种基于硒镓钡晶体的宽谱带长波红外固体激光装置由泵浦源、耦合镜、OPO输入镜、ZGP晶体、OPO输出镜、二色片组和硒镓钡晶体组成；沿泵浦光路依次设置泵浦源、耦合镜、OPO输入镜、ZGP晶体、OPO输出镜、二色片组和硒镓钡晶体；所述二色片组由第一二色片、第二二色片、聚焦镜、第三二色片和第四二色片组成，所述第一二色片与泵浦光入射方向成45°，所述第一二色片的法线与第四二色片的法线相垂直，且所述第一二色片与第四二色片底端在同一直线上；所述第二二色片与第一二色片平行且设置在第一二色片的正下方，所述第三二色片与第四二色片平行且设置在第四二色片的正下方，所述第二二色片和第三二色片之间设置有聚焦镜；OPO输出镜的出射光入射到第一二色片，所述第一二色片的出射光入射到第四二色片上，所述第一二色片的反射光入射到第二二色片，所述第二二色片的反射光入射到聚焦镜，所述聚焦镜的出射光入射到第三二色片，所述第三二色片的反射光入射到第四二色片上。A wide-band long-wave infrared solid-state laser device based on gallium-selenium-barium crystal of the present invention is composed of a pump source, a coupling mirror, an OPO input mirror, a ZGP crystal, an OPO output mirror, a dichromatic film group and a gallium-selenium-barium crystal; along the pump The pump light path is provided with a pump source, a coupling mirror, an OPO input mirror, a ZGP crystal, an OPO output mirror, a dichromatic film group and a barium selenium crystal in sequence; the dichromatic film group consists of a first dichromatic film, a second dichromatic film , focusing mirror, the third dichroic sheet and the fourth dichroic sheet, the first dichroic sheet is at 45° to the incident direction of the pump light, the normal line of the first dichroic sheet is in the same direction as the fourth dichroic sheet The normal line is perpendicular, and the bottom of the first dichromatic sheet and the fourth dichromatic sheet are on the same straight line; the second dichromatic sheet is parallel to the first dichromatic sheet and is arranged on the Directly below, the third dichroic film is parallel to the fourth dichromatic film and arranged directly below the fourth dichromatic film, and a focusing mirror is arranged between the second dichromatic film and the third dichromatic film; OPO The outgoing light of the output mirror is incident on the first dichroic sheet, the outgoing light of the first dichroic sheet is incident on the fourth dichroic sheet, and the reflected light of the first dichroic sheet is incident on the second dichroic sheet, so The reflected light of the second dichroic film is incident on the focusing mirror, the outgoing light of the focusing mirror is incident on the third dichromatic film, and the reflected light of the third dichromatic film is incident on the fourth dichromatic film.
发明原理：耦合镜将泵浦光耦合入OPO晶体，OPO谐振腔由输入镜和输出镜构成，ZGP晶体产生长波红外参量光，二色片的作用是反射剩余的泵浦光和信号光并透过闲频光，信号光经二色片和聚焦镜后注入硒镓钡晶体，闲频光经二色片后注入硒镓钡晶体，硒镓钡晶体产生与信号光和闲频光波长不同的参量光，最终多个波长的激光同时从硒镓钡晶体射出，组成宽谱带长波红外激光。Invention principle: the coupling mirror couples the pump light into the OPO crystal, the OPO resonant cavity is composed of an input mirror and an output mirror, the ZGP crystal generates long-wave infrared parametric light, and the function of the dichromatic film is to reflect the remaining pump light and signal light and transmit it. Through the idler light, the signal light is injected into the gallium selenium barium crystal after passing through the dichromatic film and the focusing mirror, and the idler light is injected into the gallium selenium barium crystal after passing through the dichromatic film, and the selenium gallium barium crystal produces wavelengths different from the signal light and the idler light For parametric light, lasers of multiple wavelengths are emitted from the barium selenium crystal at the same time to form a wide-band long-wave infrared laser.
本发明的有益效果是：The beneficial effects of the present invention are:
本发明无需额外的调谐组件，即可实现宽谱带长波红外固体激光输出，同时利用两个光学频率变换过程提高能量转换效率，实现较高能量激光输出，避免了高泵浦能量所引起的元件损伤问题。The invention can realize wide-band long-wave infrared solid-state laser output without additional tuning components. At the same time, two optical frequency conversion processes are used to improve energy conversion efficiency, realize higher energy laser output, and avoid components caused by high pump energy. damage problem.
附图说明Description of drawings
图1为一种基于硒镓钡晶体的宽谱带长波红外固体激光装置结构示意图。Fig. 1 is a schematic structural diagram of a wide-band long-wave infrared solid-state laser device based on gallium-barium-selenide crystal.
具体实施方式detailed description
具体实施方式一：如图1所示，本实施方式一种基于硒镓钡晶体的宽谱带长波红外固体激光装置由泵浦源1、耦合镜2、OPO输入镜3、ZGP晶体4、OPO输出镜5、二色片组和硒镓钡晶体11组成；沿泵浦光路依次设置泵浦源1、耦合镜2、OPO输入镜3、ZGP晶体4、OPO输出镜5、二色片组和硒镓钡晶体11；所述二色片组由第一二色片6、第二二色片7、聚焦镜8、第三二色片9和第四二色片10组成，所述第一二色片6与泵浦光入射方向成45°，所述第一二色片6的法线与第四二色片10的法线相垂直，且所述第一二色片6与第四二色片10底端在同一直线上；所述第二二色片7与第一二色片6平行且设置在第一二色片6的正下方，所述第三二色片9与第四二色片10平行且设置在第四二色片10的正下方，所述第二二色片7和第三二色片9之间设置有聚焦镜8；OPO输出镜5的出射光入射到第一二色片6，所述第一二色片6的出射光入射到第四二色片10上，所述第一二色片6的反射光入射到第二二色片7，所述第二二色片7的反射光入射到聚焦镜8，所述聚焦镜8的出射光入射到第三二色片9，所述第三二色片9的反射光入射到第四二色片10上。Specific embodiment 1: As shown in Figure 1, a wide-band long-wave infrared solid-state laser device based on barium selenium crystals in this embodiment consists of a pump source 1, a coupling mirror 2, an OPO input mirror 3, a ZGP crystal 4, and an OPO Composed of output mirror 5, dichroic film group and barium selenium crystal 11; pump source 1, coupling mirror 2, OPO input mirror 3, ZGP crystal 4, OPO output mirror 5, dichromatic film group and Selenium-gallium-barium crystal 11; the dichroic sheet group is made up of the first dichromatic sheet 6, the second dichromatic sheet 7, the focusing mirror 8, the third dichromatic sheet 9 and the fourth dichromatic sheet 10, the first The dichroic sheet 6 is 45° to the incident direction of the pumping light, the normal of the first dichroic sheet 6 is perpendicular to the normal of the fourth dichromatic sheet 10, and the first dichromatic sheet 6 is connected to the fourth dichromatic sheet 10. The bottom of the two-color sheet 10 is on the same straight line; the second two-color sheet 7 is parallel to the first two-color sheet 6 and is arranged directly below the first two-color sheet 6, and the third two-color sheet 9 is connected to the first two-color sheet 6. Four dichromatic sheets 10 are parallel and arranged directly below the fourth dichromatic sheet 10, and a focusing mirror 8 is arranged between the second dichromatic sheet 7 and the third dichromatic sheet 9; the outgoing light incident of the OPO output mirror 5 To the first dichroic sheet 6, the outgoing light of the first dichroic sheet 6 is incident on the fourth dichromatic sheet 10, and the reflected light of the first dichroic sheet 6 is incident on the second dichroic sheet 7, so The reflected light of the second dichroic sheet 7 is incident on the focusing mirror 8, the outgoing light of the focusing lens 8 is incident on the third dichroic sheet 9, and the reflected light of the third dichroic sheet 9 is incident on the fourth dichroic sheet 9. Sheet 10 on.
具体实施方式二：本实施方式与具体实施方式一不同的是：所述泵浦源1是调Q运转的2.09微米固体激光器，所述调Q运转的2.09微米固体激光器输出激光为线偏振，脉冲重复频率为100Hz～100000Hz，脉冲宽度为10ns～100ns。其他与具体实施方式一相同。Embodiment 2: The difference between this embodiment and Embodiment 1 is that the pump source 1 is a Q-switched 2.09-micron solid-state laser, and the output laser of the Q-switched 2.09-micron solid-state laser is linearly polarized and pulsed. The repetition frequency is 100Hz～100000Hz, and the pulse width is 10ns～100ns. Others are the same as the first embodiment.
具体实施方式三：本实施方式与具体实施方式一或二不同的是：所述OPO输入镜3、ZGP晶体4和OPO输出镜5组成ZGP光学参量振荡器，所述ZGP光学参量振荡器产生波长为2.8微米的信号光和8.0微米的闲频光；所述OPO输入镜3和OPO输出镜5表面均镀有介质膜，所述介质膜对2.09微米泵浦光透过率大于97％，对2.8微米参量光反射率大于99％，对8.0微米参量光透过率大于99％；所述ZGP晶体4的长度为25mm，ZGP晶体4的两个端面均镀有对泵浦光和参量光透过率大于99％的介质膜。其他与具体实施方式一或二相同。Specific embodiment three: this embodiment is different from specific embodiment one or two in that: the OPO input mirror 3, the ZGP crystal 4 and the OPO output mirror 5 form a ZGP optical parametric oscillator, and the ZGP optical parametric oscillator generates a wavelength Signal light of 2.8 microns and idler light of 8.0 microns; the surfaces of the OPO input mirror 3 and the OPO output mirror 5 are coated with a dielectric film, and the transmittance of the dielectric film to 2.09 micron pump light is greater than 97%. The parametric light reflectance of 2.8 microns is greater than 99%, and the parametric light transmittance of 8.0 microns is greater than 99%; the length of the ZGP crystal 4 is 25mm, and the two end faces of the ZGP crystal 4 are coated with a coating that is transparent to the pump light and the parametric light. Dielectric film with pass rate greater than 99%. Others are the same as those in Embodiment 1 or 2.
具体实施方式四：本实施方式与具体实施方式一至三之一不同的是：所述耦合镜2的两端面镀有2.09微米透过率大于99％的的高透介质膜。其他与具体实施方式一至三之一相同。Embodiment 4: This embodiment differs from Embodiments 1 to 3 in that: both ends of the coupling mirror 2 are coated with a high-transmittance dielectric film with a transmittance of 2.09 microns greater than 99%. Others are the same as one of the specific embodiments 1 to 3.
具体实施方式五：本实施方式与具体实施方式一至四之一不同的是：所述第一二色片6表面镀有介质膜，所述介质膜对2.09微米泵浦光反射率大于99％，对2.8微米参量光反射率大于99％，对8.0微米参量光透过率大于99％。其他与具体实施方式一至四之一相同。Embodiment 5: This embodiment differs from Embodiment 1 to Embodiment 4 in that: the surface of the first dichroic chip 6 is coated with a dielectric film, and the reflectance of the dielectric film to 2.09 micron pump light is greater than 99%. The parametric light reflectance of 2.8 microns is greater than 99%, and the parametric light transmittance of 8.0 microns is greater than 99%. Others are the same as one of the specific embodiments 1 to 4.
具体实施方式六：本实施方式与具体实施方式一至五之一不同的是：所述第二二色片7表面镀有介质膜，所述介质膜对2.09微米泵浦光透过率大于99％，对2.8微米参量光反射率大于99％。其他与具体实施方式一至五之一相同。Embodiment 6: This embodiment differs from Embodiment 1 to Embodiment 5 in that: the surface of the second dichroic chip 7 is coated with a dielectric film, and the transmittance of the dielectric film to 2.09 micron pump light is greater than 99%. , The parametric light reflectance of 2.8 microns is greater than 99%. Others are the same as one of the specific embodiments 1 to 5.
具体实施方式七：本实施方式与具体实施方式一至六之一不同的是：所述第三二色片9表面镀有介质膜，所述介质膜对2.09微米泵浦光透过率大于99％，对2.8微米参量光反射率大于99％。其他与具体实施方式一至六之一相同。Embodiment 7: This embodiment differs from Embodiment 1 to Embodiment 6 in that: the surface of the third dichroic chip 9 is coated with a dielectric film, and the transmittance of the dielectric film to 2.09 micron pump light is greater than 99%. , The parametric light reflectance of 2.8 microns is greater than 99%. Others are the same as one of the specific embodiments 1 to 6.
具体实施方式八：本实施方式与具体实施方式一至七之一不同的是：所述第四二色片10表面镀有介质膜，所述介质膜对2.09微米泵浦光反射率大于99％，对2.8微米参量光反射率大于99％，对8.0微米参量光透过率大于99％。其他与具体实施方式一至七之一相同。Embodiment 8: This embodiment differs from Embodiments 1 to 7 in that: the surface of the fourth dichromatic chip 10 is coated with a dielectric film, and the reflectance of the dielectric film to 2.09 micron pump light is greater than 99%. The parametric light reflectance of 2.8 microns is greater than 99%, and the parametric light transmittance of 8.0 microns is greater than 99%. Others are the same as one of the specific embodiments 1 to 7.
具体实施方式九：本实施方式与具体实施方式一至八之一不同的是：所述聚焦镜8的两个端面均镀有介质膜，所述介质膜对2.8微米参量光透过率大于99％。其他与具体实施方式一至八之一相同。Embodiment 9: This embodiment differs from Embodiment 1 to Embodiment 8 in that: both end surfaces of the focusing mirror 8 are coated with a dielectric film, and the dielectric film has a parametric light transmittance greater than 99% at 2.8 microns. . Others are the same as one of the specific embodiments 1 to 8.
具体实施方式十：本实施方式与具体实施方式一至九之一不同的是：所述硒镓钡晶体11的长度为40mm，两个端面均镀有介质膜，所述介质膜对2.8微米参量光透过率大于99％，对8.0微米参量光透过率大于99％。其他与具体实施方式一至九之一相同。Embodiment 10: This embodiment is different from Embodiment 1 to Embodiment 9 in that: the length of the barium selenium gallium crystal 11 is 40 mm, and both end faces are coated with a dielectric film, and the dielectric film is sensitive to 2.8 micron parametric light The transmittance is greater than 99%, and the transmittance of 8.0 micron parametric light is greater than 99%. Others are the same as one of the specific embodiments 1 to 9.
采用以下实施例验证本发明的有益效果：Adopt the following examples to verify the beneficial effects of the present invention:
实施例一：一种基于硒镓钡晶体的宽谱带长波红外固体激光装置由泵浦源1、耦合镜2、OPO输入镜3、ZGP晶体4、OPO输出镜5、二色片组和硒镓钡晶体11组成；沿泵浦光路依次设置泵浦源1、耦合镜2、OPO输入镜3、ZGP晶体4、OPO输出镜5、二色片组和硒镓钡晶体11；所述二色片组由第一二色片6、第二二色片7、聚焦镜8、第三二色片9和第四二色片10组成，所述第一二色片6与泵浦光入射方向成45°，所述第一二色片6的法线与第四二色片10的法线相垂直，且所述第一二色片6与第四二色片10底端在同一直线上；所述第二二色片7与第一二色片6平行且设置在第一二色片6的正下方，所述第三二色片9与第四二色片10平行且设置在第四二色片10的正下方，所述第二二色片7和第三二色片9之间设置有聚焦镜8；OPO输出镜5的出射光入射到第一二色片6，所述第一二色片6的出射光入射到第四二色片10上，所述第一二色片6的反射光入射到第二二色片7，所述第二二色片7的反射光入射到聚焦镜8，所述聚焦镜8的出射光入射到第三二色片9，所述第三二色片9的反射光入射到第四二色片10上。所述泵浦源1是调Q运转的2.09微米固体激光器，所述调Q运转的2.09微米固体激光器输出激光为线偏振，脉冲重复频率为100Hz～100000Hz，脉冲宽度为10ns～100ns。所述OPO输入镜3、ZGP晶体4和OPO输出镜5组成ZGP光学参量振荡器，所述ZGP光学参量振荡器产生波长为2.8微米的信号光和8.0微米的闲频光；所述OPO输入镜3和OPO输出镜5表面均镀有介质膜，所述介质膜对2.09微米泵浦光透过率大于97％，对2.8微米参量光反射率大于99％，对8.0微米参量光透过率大于99％；所述ZGP晶体4的长度为25mm，ZGP晶体4的两个端面均镀有对泵浦光和参量光透过率大于99％的介质膜。所述耦合镜2的两端面镀有2.09微米透过率大于99％的的高透介质膜。所述第一二色片6表面镀有介质膜，所述介质膜对2.09微米泵浦光反射率大于99％，对2.8微米参量光反射率大于99％，对8.0微米参量光透过率大于99％。所述第二二色片7表面镀有介质膜，所述介质膜对2.09微米泵浦光透过率大于99％，对2.8微米参量光反射率大于99％。所述第三二色片9表面镀有介质膜，所述介质膜对2.09微米泵浦光透过率大于99％，对2.8微米参量光反射率大于99％。所述第四二色片10表面镀有介质膜，所述介质膜对2.09微米泵浦光反射率大于99％，对2.8微米参量光反射率大于99％，对8.0微米参量光透过率大于99％。所述聚焦镜8的两个端面均镀有介质膜，所述介质膜对2.8微米参量光透过率大于99％。所述硒镓钡晶体11的长度为40mm，两个端面均镀有介质膜，所述介质膜对2.8微米参量光透过率大于99％，对8.0微米参量光透过率大于99％。Embodiment 1: A wide-band long-wave infrared solid-state laser device based on barium selenium crystal consists of a pump source 1, a coupling mirror 2, an OPO input mirror 3, a ZGP crystal 4, an OPO output mirror 5, a dichroic chip group and a selenium Composed of gallium-barium crystal 11; pumping source 1, coupling mirror 2, OPO input mirror 3, ZGP crystal 4, OPO output mirror 5, dichromatic film group and gallium-barium selenium crystal 11 are sequentially arranged along the pump optical path; the dichromatic The sheet group is composed of a first dichromatic sheet 6, a second dichromatic sheet 7, a focusing mirror 8, a third dichromatic sheet 9 and a fourth dichromatic sheet 10, and the first dichromatic sheet 6 is aligned with the incident direction of the pump light 45°, the normal line of the first dichromatic sheet 6 is perpendicular to the normal line of the fourth dichromatic sheet 10, and the bottom ends of the first dichromatic sheet 6 and the fourth dichromatic sheet 10 are on the same straight line The second dichromatic sheet 7 is parallel to the first dichromatic sheet 6 and is arranged directly below the first dichromatic sheet 6, and the third dichromatic sheet 9 is parallel to the fourth second color sheet 10 and is arranged at the second Right below the four dichroic sheets 10, a focusing mirror 8 is arranged between the second dichroic sheet 7 and the third dichroic sheet 9; the outgoing light of the OPO output mirror 5 is incident on the first dichroic sheet 6, and the The outgoing light of the first dichromatic sheet 6 is incident on the fourth dichromatic sheet 10, the reflected light of the first dichromatic sheet 6 is incident to the second dichromatic sheet 7, and the reflected light of the second dichromatic sheet 7 The light emitted by the focusing mirror 8 is incident on the third dichroic sheet 9 , and the reflected light of the third dichroic sheet 9 is incident on the fourth dichroic sheet 10 . The pumping source 1 is a Q-switched 2.09-micron solid-state laser. The output laser of the Q-switched 2.09-micron solid-state laser is linearly polarized, the pulse repetition frequency is 100 Hz-100000 Hz, and the pulse width is 10 ns-100 ns. The OPO input mirror 3, the ZGP crystal 4 and the OPO output mirror 5 form a ZGP optical parametric oscillator, and the ZGP optical parametric oscillator produces a signal light with a wavelength of 2.8 microns and an idler light of 8.0 microns; the OPO input mirror 3 and the surface of the OPO output mirror 5 are coated with a dielectric film, the dielectric film is greater than 97% of the 2.09 micron pump light transmittance, greater than 99% of the 2.8 micron parametric light reflectance, 8.0 micron parametric light transmittance greater than 99%; the length of the ZGP crystal 4 is 25mm, and both end surfaces of the ZGP crystal 4 are coated with a dielectric film with a transmittance greater than 99% for pump light and parametric light. The two ends of the coupling mirror 2 are coated with a high-permeability dielectric film with a transmittance of 2.09 microns greater than 99%. The surface of the first dichroic chip 6 is coated with a dielectric film, and the reflectance of the dielectric film is greater than 99% for 2.09 micron pump light, greater than 99% for 2.8 micron parametric light, and greater than 99% for 8.0 micron parametric light transmittance. 99%. The surface of the second dichroic chip 7 is coated with a dielectric film, and the transmittance of the dielectric film is greater than 99% for pump light at 2.09 microns, and the reflectance for parametric light at 2.8 microns is greater than 99%. The surface of the third dichroic chip 9 is coated with a dielectric film, and the transmittance of the dielectric film to 2.09 micron pump light is greater than 99%, and the reflectance to 2.8 micron parametric light is greater than 99%. The surface of the fourth dichroic chip 10 is coated with a dielectric film, the dielectric film has a reflectivity greater than 99% for pump light at 2.09 microns, a reflectivity greater than 99% for parametric light at 2.8 microns, and a transmittance greater than 99% for parametric light at 8.0 microns. 99%. Both end surfaces of the focusing lens 8 are coated with a dielectric film, and the transmittance of the dielectric film to 2.8 micron parametric light is greater than 99%. The length of the selenium-gallium-barium crystal 11 is 40 mm, and both ends are coated with a dielectric film, and the parametric light transmittance of the dielectric film is greater than 99% for 2.8 microns, and greater than 99% for 8.0 microns.
本实施例所述硒镓钡晶体11产生4.3微米和8.0微米的参量光。The gallium-barium-selenide crystal 11 in this embodiment generates parametric light of 4.3 microns and 8.0 microns.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121501.4A CN105552708A (en) | 2016-03-03 | 2016-03-03 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121501.4A CN105552708A (en) | 2016-03-03 | 2016-03-03 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105552708A true CN105552708A (en) | 2016-05-04 |
Family
ID=55831740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610121501.4A Pending CN105552708A (en) | 2016-03-03 | 2016-03-03 | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552708A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109038200A (en) * | 2018-08-10 | 2018-12-18 | 哈尔滨工业大学 | The medium-wave infrared laser of high brightness |
| CN111244743A (en) * | 2020-01-17 | 2020-06-05 | 哈尔滨工业大学 | A dual-band laser based on electro-optical crystal for fast switching output of mid- and long-wave infrared |
| CN115548855A (en) * | 2022-09-22 | 2022-12-30 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid- and far-infrared lasers based on barium selenium gallium crystals |
| CN115541521A (en) * | 2022-11-03 | 2022-12-30 | 哈尔滨翰奥科技有限公司 | A method for measuring the concentration of various gases with infrared band laser |
| CN115832844A (en) * | 2022-09-22 | 2023-03-21 | 中国人民解放军国防科技大学 | Method and device for generating middle and far infrared supercontinuum laser based on selenium-gallium-barium crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098579A (en) * | 2015-08-24 | 2015-11-25 | 哈尔滨工业大学 | New Far Infrared 8μm Laser Amplifying Device |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| CN105226491A (en) * | 2015-10-29 | 2016-01-06 | 中国科学院合肥物质科学研究院 | Selenium-gallium-barium optical parametric oscillator of 3-micron waveband solid laser pumping |
-
2016
- 2016-03-03 CN CN201610121501.4A patent/CN105552708A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098579A (en) * | 2015-08-24 | 2015-11-25 | 哈尔滨工业大学 | New Far Infrared 8μm Laser Amplifying Device |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| CN105226491A (en) * | 2015-10-29 | 2016-01-06 | 中国科学院合肥物质科学研究院 | Selenium-gallium-barium optical parametric oscillator of 3-micron waveband solid laser pumping |
Non-Patent Citations (1)
| Title |
|---|
| 王礼等: "2.09μm纳秒钬激光抽运的磷锗锌光参量振荡器", 《中国激光》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109038200A (en) * | 2018-08-10 | 2018-12-18 | 哈尔滨工业大学 | The medium-wave infrared laser of high brightness |
| CN109038200B (en) * | 2018-08-10 | 2019-06-11 | 哈尔滨工业大学 | High Brightness Mid-Wave Infrared Laser |
| CN111244743A (en) * | 2020-01-17 | 2020-06-05 | 哈尔滨工业大学 | A dual-band laser based on electro-optical crystal for fast switching output of mid- and long-wave infrared |
| CN111244743B (en) * | 2020-01-17 | 2021-03-23 | 哈尔滨工业大学 | A dual-band laser based on electro-optical crystal for fast switching output of mid- and long-wave infrared |
| CN115548855A (en) * | 2022-09-22 | 2022-12-30 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid- and far-infrared lasers based on barium selenium gallium crystals |
| CN115832844A (en) * | 2022-09-22 | 2023-03-21 | 中国人民解放军国防科技大学 | Method and device for generating middle and far infrared supercontinuum laser based on selenium-gallium-barium crystal |
| CN115548855B (en) * | 2022-09-22 | 2023-10-20 | 中国人民解放军国防科技大学 | Method and device for generating dual-band mid- and far-infrared laser based on gallium selenium and barium crystals |
| CN115832844B (en) * | 2022-09-22 | 2024-02-09 | 中国人民解放军国防科技大学 | Method and device for generating mid-far infrared supercontinuum laser based on selenium gallium barium crystal |
| CN115541521A (en) * | 2022-11-03 | 2022-12-30 | 哈尔滨翰奥科技有限公司 | A method for measuring the concentration of various gases with infrared band laser |
| US11841320B1 (en) | 2022-11-03 | 2023-12-12 | Xinjiang Technical Institute Of Physics And Chemistry, Chinese Academy Of Sciences | Method for measuring concentrations of multiple gases by using infrared band laser light |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105552708A (en) | Broad band long wave infrared solid laser device based on selenium- gallium- barium crystals | |
| CN101211088B (en) | Single crystal tunable broadband non-collinear femtosecond optical parametric amplification method and device | |
| CN106711745A (en) | Wide-tuning and narrow-linewidth nanosecond pulse double-resonance medium-infrared parameter oscillator | |
| CN101918889B (en) | Wide-band optical amplifier, optical pulse generator, and optical instrument | |
| KR20220163959A (en) | Parametric light generation method and application | |
| CN105226491B (en) | Selenium-gallium-barium optical parametric oscillator of 3-micron waveband solid laser pumping | |
| CN103311791B (en) | Femtosecond optical parameter amplifier | |
| CN103855602A (en) | Gas stimulated Raman amplifier with Raman seed light | |
| WO2009047888A1 (en) | Solid-state laser device and image display device | |
| CN101916961B (en) | Double-wavelength external cavity resonance laser frequency converting device with tunable wavelength | |
| CN104950546B (en) | A kind of method that the output of medium-wave infrared laser is produced using parameter transform technology | |
| CN105633789A (en) | CdSe optical parametric oscillator-based far infrared laser generator | |
| CN106684683A (en) | Continuous/pulse superposition type single-beam solid laser | |
| JP2015203714A (en) | Terahertz wave generating apparatus and method | |
| CN102946047A (en) | Seed injection single frequency optical parametric oscillator | |
| CN104953457A (en) | Device for alternately outputting dual-wavelength Q-switched pulse lasers | |
| CN103236633B (en) | 3-5-micron waveband intermediate infrared solid laser | |
| CN101625500A (en) | Ultra-short pulse time purification device | |
| CN105633777A (en) | Selenium-gallium-barium optical parameter oscillator for quickly tuning output wavelength | |
| CN105680309A (en) | A compact picosecond pulse width tunable mid-infrared laser | |
| CN110061409A (en) | 10 μm of LONG WAVE INFRARED lasers of narrow linewidth | |
| CN106451032A (en) | A Terahertz Wave Enhanced Intracavity Terahertz Wave Parametric Oscillator | |
| JP6907917B2 (en) | Wavelength converter | |
| US10337928B2 (en) | Autocorrelation measurement device | |
| CN115656042A (en) | Large-rotation-angle tuning medium-long wave infrared coherent light source device with stable light beam pointing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160504 |