CN104659648A - Neodymium-doped langasite self-frequency-doubling ultra-short pulse laser - Google Patents
Neodymium-doped langasite self-frequency-doubling ultra-short pulse laser Download PDFInfo
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- CN104659648A CN104659648A CN201310603654.9A CN201310603654A CN104659648A CN 104659648 A CN104659648 A CN 104659648A CN 201310603654 A CN201310603654 A CN 201310603654A CN 104659648 A CN104659648 A CN 104659648A
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Abstract
The invention provides a neodymium-doped langasite self-frequency-doubling ultra-short pulse laser. The self-frequency-doubling ultra-short pulse laser is used for directly outputting fundamental-frequency laser and doubled-frequency laser, and comprises a laser self-frequency-doubling crystal which serves as a gain medium and a frequency-doubling crystal of the laser; the laser self-frequency-doubling crystal is an Nd ion-doped La3Ga5SiO14 crystal. The laser provided by the invention has high operability and stability, and has the advantages of compact and small structure, simple system, relatively low cost, fundamental-frequency laser and double-frequency ultra-short pulse laser output, high repetition frequency, pulse width of pico-second order, high light beam quality, and the like, is widely applied to the fields of display, medical treatment, information transmission, scientific research and the like, and has a very good application prospect and a commercial value.
Description
Technical field
The present invention relates to laser technology field, particularly relate to a kind of neodymium-doped LGS from frequency multiplication ultrashort pulse laser.
Background technology
LGS (La
3ga
5siO
14, being abbreviated as LGS) and crystal is a kind of multifunctional material, its good piezoelectric property, electro-optical characteristic and dielectric characteristic are widely used.As piezoelectric, due to the application potential that it is huge, become the study hotspot of countries in the world, wherein in the application of acoustic surface ripple, it is the crystal that simultaneously can meet multinomial technical requirement few in number; As electrooptical material, it is used widely in the laser as electro-optical Q-switch; As dielectric substance, its excellent characteristic also result in extensive concern and research.As in gain medium, the La of neodymium (Nd) ion doping
3ga
5siO
14crystal successfully achieves continuously and Q impulse running at present.Therefore, functional characteristic that this crystal possesses fully is excavated and application prospect tool has very important significance and value.
All solid state ultra-short pulse laser is less than picosecond magnitude (10 at the pulse duration obtained by mode-locking technique
-12) ultra-short pulse laser, it has using value very widely in fields such as national defence, industry, medical treatment and scientific researches.The reliable and stable psec oscillator wherein with high light beam quality can become the seed source of high-power all-solid-state picosecond laser amplifier, is the basis of extensive use.The red bluish-green ultra-short pulse laser produced by frequency-doubled effect has very important meaning in the field such as laser display and laser imaging especially.
Generally speaking, laser often exports a kind of laser of specific wavelength.At present, the most frequently used way of expanded laser light wave-length coverage uses nonlinear optical crystal, utilizes position to match technology, and by frequency multiplication and frequently, difference frequency and T parameter equivalent benefit realize.In recent years, also utilize Raman shift crystal, by laser beam transformation to some specific band.These methods have enriched optical maser wavelength, to meet the demand of different aspect.Laser self frequency-doubling crystal (Self-frequency doubling crystal, be called for short SFD crystal) be one roughly the same time there is the multifunctional crystal of laser and nonlinear effect.It is little, easy to adjust that all solid state laser made with laser self frequency-doubling crystal has volume, stability advantages of higher.
At laser technology field, the passive mode locking realized by saturated absorbing body (SESAM) is the main means obtaining gain media ultra-short pulse oscillator.Because SESAM is similar to a speculum, when being used as passive mode locking element, it can only be an end mirror of resonant cavity.Therefore, while use SESAM is as mode-locking device, the method obtaining unidirectional output is that this is also the usual way of current commodity laser with crystal as output.But when considering high power pump, laser crystal exists thermal lensing effect, therefore use crystal good not as the beam quality of the laser of output, there is the larger angle of divergence.
Summary of the invention
La
3ga
5siO
14crystal is widely used as gain medium.Present inventor finds under study for action, and Nd adulterates La
3ga
5siO
14crystal has frequency-doubled effect, can use as frequency multiplication element in optical sccond-harmonic generation process.Because it both can as gain medium, again can as frequency-doubling crystal, can as the laser self frequency-doubling crystal from frequency multiplication ultrashort pulse laser.Utilize it to have the feature of frequency-doubled effect, an object of the present invention is to provide a kind of frequency multiplication element.Another object of the present invention is the La that will provide Nd ion doping
3ga
5siO
14crystal is as the application of frequency-doubling crystal in optical sccond-harmonic generation process.Utilize it to have the feature of laser self-frequency-doubling's effect, another object of the present invention to provide a kind of laser self-frequency-doubling's element.Another object of the present invention is to provide Nd doping La
3ga
5siO
14crystal as laser self frequency-doubling crystal in the application in frequency multiplication ultrashort pulse laser.An also object of the present invention is to provide one to utilize Nd doping La
3ga
5siO
14crystal as laser self frequency-doubling crystal from frequency multiplication ultrashort pulse laser.
In order to realize one object of the present invention, the invention provides a kind of frequency multiplication element, by the La of Nd ion doping
3ga
5siO
14crystallization.
In order to realize another object of the present invention, the invention provides the La of Nd ion doping
3ga
5siO
14crystal is as the application of frequency-doubling crystal in optical sccond-harmonic generation process.
In order to realize another object of the present invention, the invention provides a kind of laser self-frequency-doubling's element, by the La of Nd ion doping
3ga
5siO
14crystallization.
In order to realize another object of the present invention, the invention provides the La of Nd ion doping
3ga
5siO
14crystal as laser self frequency-doubling crystal in the application in frequency multiplication ultrashort pulse laser.
In order to realize an also object of the present invention, the invention provides a kind of from frequency multiplication ultrashort pulse laser, for directly exporting fundamental frequency and double-frequency laser, comprise simultaneously as the gain media of described laser and the laser self frequency-doubling crystal of frequency-doubling crystal, wherein, described laser self frequency-doubling crystal is the La of Nd ion doping
3ga
5siO
14crystal.
In one embodiment, laser of the present invention can also comprise:
Pumping source, for providing pumping laser; Alternatively, described pumping source is semiconductor laser;
Laserresonator, for obtaining oscillating laser, wherein, described laser self frequency-doubling crystal is arranged in described laserresonator; And
Optical focusing system, is arranged between described pumping source and described laserresonator, for by pumping laser imaging and focusing to described laser self frequency-doubling crystal.
In one embodiment, described laserresonator can comprise flat output mirror, the first plano-concave mirror, the second plano-concave mirror, the 3rd plano-concave mirror and semiconductor saturable absorbing mirror successively along light path, described first plano-concave mirror is identical with described second plano-concave mirror curvature, relative and the confocal setting of concave surface, described laser self frequency-doubling crystal is arranged on the focus place of described first plano-concave mirror and described second plano-concave mirror; Described flat output mirror and described semiconductor saturable absorbing mirror are as two end mirrors of described laserresonator.
In one embodiment, the low-angle angle being greater than 0 degree and being less than 10 degree can be had between the optical axis of described first plano-concave mirror and described second plano-concave mirror.
In one embodiment, described first plano-concave minute surface can be coated with the anti-reflection deielectric-coating of pumping laser to the side of described pumping source, and the side towards described laser self frequency-doubling crystal can be coated with to the anti-reflection deielectric-coating of pumping laser and to oscillating laser height inverse medium film; Two end faces towards described first plano-concave mirror and described second plano-concave mirror of described laser self frequency-doubling crystal can be coated with to the anti-reflection deielectric-coating of pumping laser and to the anti-reflection deielectric-coating of oscillating laser respectively; Described second plano-concave minute surface can be coated with to the anti-reflection deielectric-coating of pumping laser and to oscillating laser height inverse medium film to the side of described laser self frequency-doubling crystal; Described 3rd plano-concave minute surface can be coated with oscillating laser height inverse medium film to the side of described second plano-concave mirror and described semiconductor saturable absorbing mirror; Described flat output mirror can be coated with oscillating laser height inverse medium film towards the side of described first plano-concave mirror, and opposite side can be coated with the anti-reflection deielectric-coating of oscillating laser.
In one embodiment, the working temperature of described laser self frequency-doubling crystal can be 10-18 DEG C.
In one embodiment, described laser self frequency-doubling crystal can be the La of the Nd ion doping of doping content 1%at
3ga
5siO
14crystal.
Present inventor's Late Cambrian La
3ga
5siO
14after crystal doping neodymium ion, as a kind of laser crystal, there is laser self-frequency-doubling's effect, and obtain all solid state ultrashort pulse self-frequency-doubling laser based on this.Compared with prior art, the present invention at least has the following advantages:
1) the present invention adopts the La of Nd ion doping
3ga
5siO
14as gain media, by the passive mode locking of SESAM, export ultrashort pulse basic frequency laser, can be realized it directly export from frequency multiplication ultra-short pulse laser without the need to adding frequency-doubling crystal in chamber or outside chamber simultaneously.
2) the present invention is used for the element SESAM of passive mode locking and the 3rd concave mirror does not need fine setting can realize stable continuous locking mold.Open pump laser power supply and increase power and can realize locked mode running.
3) laser of the present invention uses level crossing as output, compares crystal output, can not affect stability when high power because of heating.
4) laser of the present invention is all solid state laser, and pumping laser can be the semiconductor laser that volume is little; Secondly, the present invention adopts self-frequency-doubling crystal to export double-frequency laser, without the need to adding frequency-doubling crystal in chamber or outside chamber; Moreover resonant cavity of the present invention uses number of elements few, and resonant cavity total length is shorter, the size comparatively compact of oscillator.
5) the present invention adopt from frequency multiplication ultra-short pulse laser technology, make resonant cavity directly export psec self-frequency-doubling laser.Laser self frequency-doubling crystal used is multifunctional material simultaneously, has good cross-application potentiality.Be with a wide range of applications in medical treatment, laser display and the field such as imaging, information transmission.
6) laser of the present invention has good operability and stability, compact conformation is small and exquisite, system is simple, cost is lower, fundamental frequency and export from frequency multiplication ultra-short pulse laser, the advantage such as pulse duration and high light beam quality of high repetition frequency, picosecond magnitude.
According to hereafter by reference to the accompanying drawings to the detailed description of the specific embodiment of the invention, those skilled in the art will understand above-mentioned and other objects, advantage and feature of the present invention more.
Accompanying drawing explanation
Hereinafter describe specific embodiments more of the present invention with reference to the accompanying drawings by way of example, and not by way of limitation in detail.Reference numeral identical in accompanying drawing denotes same or similar parts or part.It should be appreciated by those skilled in the art that these accompanying drawings may not be drawn in proportion.In accompanying drawing:
Fig. 1 is according to an embodiment of the invention from the schematic index path of frequency multiplication ultrashort pulse laser;
Fig. 2 is the double-frequency laser ccd image exported from frequency multiplication ultrashort pulse laser of one embodiment of the invention;
Fig. 3 is the spectrogram recorded from frequency multiplication ultrashort pulse laser spectrometer of one embodiment of the invention;
Fig. 4 a and 4b is the fundamental frequency that exports of the stable mode-locking recorded from frequency multiplication ultrashort pulse laser of one embodiment of the invention and double frequency pulse sequence respectively;
Fig. 5 is the pulse width signal recorded from frequency multiplication ultrashort pulse laser intensity autocorrelation function analyzer of one embodiment of the invention.
Embodiment
Present inventor finds Nd doping La
3ga
5siO
14crystal has laser self-frequency-doubling's effect, utilizes this character to apply it in frequency multiplication ultrashort pulse laser.
Of the present invention from frequency multiplication ultrashort pulse laser, adopt the La of Nd ion doping
3ga
5siO
14crystal (hereinafter abbreviated as Nd:LGS crystal), simultaneously as gain media and the frequency-doubling crystal of laser, can produce fundamental frequency and double-frequency laser also stable output simultaneously in resonant cavity.Laser of the present invention can comprise pumping source in general manner, optical focusing system, and laserresonator, and Nd:LGS crystal is arranged in laserresonator.Pumping source is used for providing pumping laser, and optical focusing system is arranged between pumping source and laserresonator, for by pumping laser imaging and focusing to Nd:LGS crystal.Laserresonator is for obtaining oscillating laser, and Nd:LGS crystal produces the necessary population upset needed for laser generation under pumping laser pumping, produces fundamental frequency light and also part of fundamental light is converted to frequency doubled light.Fundamental frequency light and frequency doubled light vibrate in laserresonator, obtain stable fundamental frequency and double-frequency laser output.
Fig. 1 shows according to an embodiment of the invention from the schematic index path of frequency multiplication ultrashort pulse laser.As shown in Figure 1, laser can comprise pumping source (not shown) in general manner, optical focusing system 1 and laserresonator.Pumping source can elect semiconductor laser as.Laserresonator comprises flat output mirror 7, first plano-concave mirror 2, second plano-concave mirror 4, the 3rd plano-concave mirror 5 and semiconductor saturable absorbing mirror 6 successively along light path.First plano-concave mirror 2 is identical with the curvature of the second plano-concave mirror 4, and focus overlaps, ground is arranged its concave surface relatively, composition symmetric confocal formula structure.Nd:LGS crystal 3 is arranged on center (namely the first plano-concave mirror 2 and the second plano-concave mirror 4 common focus) place of symmetric confocal formula structure.Flat output mirror 7 and semiconductor saturable absorbing mirror 6 are as two end mirrors of laserresonator.Wherein, have the low-angle angle being greater than 0 degree and being less than 10 degree between the first plano-concave mirror 2 and the optical axis of the second plano-concave mirror 4, such laser-conversion efficiency is higher.First plano-concave mirror 2 is coated with the anti-reflection deielectric-coating of pumping laser towards the side of pumping source, and the side towards Nd:LGS crystal 3 is coated with to the anti-reflection deielectric-coating of pumping laser and to oscillating laser height inverse medium film.Here oscillating laser refers to basic frequency laser from laserresonator outgoing and double-frequency laser.Two end faces towards the first plano-concave mirror 2 and the second plano-concave mirror 4 of Nd:LGS crystal 3 are coated with respectively to the anti-reflection deielectric-coating of pumping laser and to the anti-reflection deielectric-coating of oscillating laser.Second plano-concave mirror 4 is coated with to the anti-reflection deielectric-coating of pumping laser and to oscillating laser height inverse medium film towards the side of Nd:LGS crystal 3.3rd plano-concave mirror 5 is coated with oscillating laser height inverse medium film towards the side of the second plano-concave mirror 4.Flat output mirror 7 is coated with oscillating laser height inverse medium film towards the side of the first plano-concave mirror 2, and opposite side is coated with the anti-reflection deielectric-coating of oscillating laser.
When the pumping laser that pumping source exports focuses on Nd:LGS crystal 3 by optical focusing system 1, Nd:LGS crystal 3 produces the necessary population upset needed for laser generation under pumping laser pumping, because the effect of stimulated radiation, in Nd:LGS crystal 3, produce the fundamental frequency light of launching to all directions.Wherein, the 3rd plano-concave mirror 5 is reflected onto towards the fundamental frequency light of the side outgoing of the second plano-concave mirror 4 via the second plano-concave mirror 4 from Nd:LGS crystal 3, fundamental frequency light is focused to semiconductor saturable absorbing mirror 6 by the 3rd plano-concave mirror 5, the 3rd plano-concave mirror 5 is reflexed to again by semiconductor saturable absorbing mirror 6, reflex in Nd:LGS crystal 3 by the second plano-concave mirror 4 again, continue excitation Nd:LGS crystal 3 and produce more fundamental frequency light.From Nd:LGS crystal 3, be incident to flat output mirror 7 towards the fundamental frequency light of the side outgoing of the first plano-concave mirror 2 after the first plano-concave mirror 2 reflects, the fundamental frequency light of the overwhelming majority reflects from flat output mirror 7 and is incident to again Nd:LGS crystal 3 via the first plano-concave mirror 2.Like this, fundamental frequency light is oscillate between semiconductor saturable absorbing mirror 6 and flat output mirror 7, and realizes stable mode-locking, forms ultra-short pulse laser, and produces ultrashort pulse frequency-doubling laser by the frequency-doubled effect of Nd:LGS crystal 3 in the process of vibration.The light path of fundamental frequency light and frequency doubled light is as shown in the solid line in Fig. 1 and dotted line.Except along except the light of paths, the fundamental frequency light in other directions laserresonator of overflowing very is soon outer and do not form vibration.Then constantly increase when the fundamental frequency light of paths and the light intensity of frequency doubled light are propagated in Nd:LGS crystal 3, thus stably can export fundamental frequency light and frequency doubled light continuously at flat output mirror 7.
Nd:LGS crystal, under pumping laser pumping effect, can give off 1314nm, the light of 1064nm and 904nm, and is producing 657nm respectively under frequency multiplication effect, the ultrashort pulse light of 532nm and 452nm.Below to run on the ultrashort pulse Nd:LGS green (light) laser of 1064nm and the SESAM passive mode locking from frequency multiplication 532nm, content of the present invention is described.
In this laser, pumping source is the diode laser of the coupling fiber output that the triumphant Pring AS in Beijing produces, and the centre wavelength of pumping laser is 808nm, and power output is 2W, and optical fiber core diameter is 50 microns, numerical aperture 0.22.The doping content of Nd:LGS crystal 3 is 1%at, gain size 3 × 3 × 8mm
3it is placed on the crystal underedge face cooling above red copper block, its temperature controls 14 DEG C (temperature can between 10-18 DEG C), the two ends of Nd:LGS crystal 3 are coated with two anti-reflection film, namely to the anti-reflection deielectric-coating of pumping laser (T>98%@808nm) and to the anti-reflection deielectric-coating of oscillating laser (T>99.8%@1064nm & 532nm).The diode laser pumped laser imaging that optical fiber exports focuses on Nd:LGS crystal 3 by optical focusing system 1, and imaging multiplying power is 1:1, and focal length is 50mm, and interface is SMA905 standard interface, and the spot diameter after focusing is about 50 microns.Radius of curvature R=the 75mm of the first plano-concave mirror 2, eyeglass is coated with the anti-reflection deielectric-coating of pumping laser towards optical focusing system 1 one side, transmitance is greater than 99.8%, and the side towards Nd:LGS crystal 3 is coated with to the anti-reflection deielectric-coating of pumping laser (T>98%@808nm) and to oscillating laser height inverse medium film (R>99.8%@1064nm & 532nm).Laser beam waist on the radius of curvature R=75mm of the second plano-concave mirror 4, guarantee Nd:LGS crystal 3 and the pattern matching of pump light, the second plano-concave mirror 4 is relative with the concave surface of the first plano-concave mirror 2, and focus overlaps, the low-angle angle with 5 degree between both optical axises.The concave surface of the second plano-concave mirror 4 is coated with the high inverse medium film (R>99.8%@1064nm & 532nm) to oscillating laser.3rd plano-concave mirror 5 for radius of curvature be the concave mirror of 100mm, concave surface is coated with oscillating laser height inverse medium film (R>99.8%@1064nm & 532nm), be used for focusing on the vibration hot spot on semiconductor saturable absorbing mirror 6, make semiconductor saturable absorbing mirror 6 be operated in saturation condition, ensure the stable mode-locking of laser.Semiconductor saturable absorbing mirror 6 is commercial SESAM, modulation depth 4%, and centre wavelength is at oscillating laser 1064nm place, high anti-to oscillating laser 1064nm and 532nm.It is the deielectric-coating of 0.5% that flat output mirror 7 is coated with at oscillating laser place output coupling efficiency towards the one side in laserresonator, and another side is coated with the anti-reflection deielectric-coating (T>99.8%@1064nm & 532nm) to oscillating laser.Flat output mirror 7 and semiconductor saturable absorbing mirror 6 constitute two end mirrors of laserresonator.The chamber of laserresonator is long is 0.86m, corresponding repetition rate 173.7MHz.Calculating girdling the waist on Nd:LGS crystal 3 with abcd matrix is 46 μm, and girdling the waist on SESAM is 60 μm.
With prism or other spectroscopes, basic frequency laser and double-frequency laser are separated after flat output mirror 7, and adopt CCD to face the double-frequency laser light spot image of double-frequency laser exit direction shooting as shown in Figure 2.As can be seen from Figure 2 the beam quality of laser facula is better.Adopt spectrometer to obtain the spectrogram of frequency doubled light as shown in Figure 3, have at 532nm place the peak value of pulse that intensity is very high, this directly confirms that laser of the present invention can export frequency doubling light pulse.
With prism or other spectroscopes, basic frequency laser and double-frequency laser are separated after flat output mirror 7, adopt photoelectric probe to detect the output laser pulse of basic frequency laser and double-frequency laser respectively, obtain pulse train as shown in Figs. 4a and 4b.Wherein, in Fig. 4 a and 4b, the minimum scale of the abscissa of figure below is microsecond, and the minimum scale of the abscissa of upper figure is that nanosecond, (length being equivalent to the minimum scale of figure below amplified 10
6doubly).From figure below of Fig. 4 a, this basic frequency laser intensity does not almost fluctuate in Long time scale, and stability is fine.Sequence chart more clearly can be seen from the upper figure of Fig. 4 a, prove that the basic frequency laser of passive mode locking is more stable.Similarly, also very stable from the double-frequency laser of the known output of upper figure below of Fig. 4 b.And basic frequency laser is consistent with repetition rate in the sequence chart of double-frequency laser, further demonstrates ultrashort pulse frequency-doubling laser and really create basic frequency laser and double-frequency laser simultaneously.
The laser autocorrelation signal that employing intensity autocorrelation function analyzer (commercial measuring instrument) obtains as shown in Figure 5.The width (full width at half maximum (FWHM)) that can obtain basic frequency laser pulse from this signal is 11 psecs, proves that obtaining laser is ultra-short pulse laser.
In the present invention, if desired obtain the ultrashort pulse Nd:LGS red laser running on 1314nm and the SESAM passive mode locking from frequency multiplication 657nm, only need be set to 1314nm and 657nm by oscillating laser height inverse medium film with to the corresponding wavelength of the anti-reflection deielectric-coating of oscillating laser.
If desired obtain the ultrashort pulse Nd:LGS blue laser running on 904nm and the SESAM passive mode locking from frequency multiplication 452nm, only need be set to 904nm and 452nm by oscillating laser height inverse medium film with to the corresponding wavelength of the anti-reflection deielectric-coating of oscillating laser.
It will be understood by those skilled in the art that except the laserresonator shown in Fig. 1, laser of the present invention can also adopt the dissimilar laserresonator comprising Nd:LGS laser self frequency-doubling crystal.
So far, those skilled in the art will recognize that, although multiple exemplary embodiment of the present invention is illustrate and described herein detailed, but, without departing from the spirit and scope of the present invention, still can directly determine or derive other modification many or amendment of meeting the principle of the invention according to content disclosed by the invention.Therefore, scope of the present invention should be understood and regard as and cover all these other modification or amendments.
Claims (10)
1. a frequency multiplication element, by the La of Nd ion doping
3ga
5siO
14crystallization.
The La of 2.Nd ion doping
3ga
5siO
14crystal is as the application of frequency-doubling crystal in optical sccond-harmonic generation process.
3. laser self-frequency-doubling's element, by the La of Nd ion doping
3ga
5siO
14crystallization.
The La of 4.Nd ion doping
3ga
5siO
14crystal as laser self frequency-doubling crystal in the application in frequency multiplication ultrashort pulse laser.
5., from a frequency multiplication ultrashort pulse laser, for directly exporting fundamental frequency and double-frequency laser, comprise simultaneously as the gain media of described laser and the laser self frequency-doubling crystal of frequency-doubling crystal, it is characterized in that, described laser self frequency-doubling crystal is the La of Nd ion doping
3ga
5siO
14crystal.
6. laser according to claim 5, is characterized in that, also comprises:
Pumping source, for providing pumping laser; Alternatively, described pumping source is semiconductor laser;
Laserresonator, for obtaining oscillating laser, wherein, described laser self frequency-doubling crystal is arranged in described laserresonator; And
Optical focusing system, is arranged between described pumping source and described laserresonator, for by pumping laser imaging and focusing to described laser self frequency-doubling crystal.
7. the laser according to claim 5 or 6, it is characterized in that, described laserresonator comprises flat output mirror, the first plano-concave mirror, the second plano-concave mirror, the 3rd plano-concave mirror and semiconductor saturable absorbing mirror successively along light path, described first plano-concave mirror is identical with described second plano-concave mirror curvature, relative and the confocal setting of concave surface, described laser self frequency-doubling crystal is arranged on the focus place of described first plano-concave mirror and described second plano-concave mirror; Described flat output mirror and described semiconductor saturable absorbing mirror are as two end mirrors of described laserresonator.
8. laser according to claim 7, is characterized in that,
Described first plano-concave minute surface is coated with the anti-reflection deielectric-coating of pumping laser to the side of described pumping source, and the side towards described laser self frequency-doubling crystal is coated with to the anti-reflection deielectric-coating of pumping laser and to oscillating laser height inverse medium film;
Two end faces towards described first plano-concave mirror and described second plano-concave mirror of described laser self frequency-doubling crystal are coated with to the anti-reflection deielectric-coating of pumping laser and to the anti-reflection deielectric-coating of oscillating laser respectively;
Described second plano-concave minute surface is coated with to the anti-reflection deielectric-coating of pumping laser and to oscillating laser height inverse medium film to the side of described laser self frequency-doubling crystal;
Described 3rd plano-concave minute surface is coated with oscillating laser height inverse medium film to the side of described second plano-concave mirror and described semiconductor saturable absorbing mirror;
Described flat output mirror is coated with oscillating laser height inverse medium film towards the side of described first plano-concave mirror, and opposite side is coated with the anti-reflection deielectric-coating of oscillating laser.
9. the laser according to any one of claim 5-8, is characterized in that, the working temperature of described laser self frequency-doubling crystal is 10-18 DEG C.
10. the laser according to any one of claim 5-9, is characterized in that, described laser self frequency-doubling crystal is the La of the Nd ion doping of doping content 1%at
3ga
5siO
14crystal.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105048274A (en) * | 2015-08-24 | 2015-11-11 | 山东大学 | Passive Q-switched pulse-type self-frequency doubling green light laser |
| CN108321672A (en) * | 2018-03-12 | 2018-07-24 | 中国科学院苏州生物医学工程技术研究所 | A kind of Bladder stone system of high-peak power |
| CN111555107A (en) * | 2020-05-15 | 2020-08-18 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251625A (en) * | 1997-03-12 | 2000-04-26 | 拉菲达发展公司 | Langasite wafer and method for producing the same |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
| JP2007112700A (en) * | 2005-09-22 | 2007-05-10 | Nec Tokin Corp | Crucible for growing crystal, single crystal, and method for growing the same |
| CN101335419A (en) * | 2008-07-30 | 2008-12-31 | 山东大学 | Human eye safe Raman laser based on lanthanum silicate crystal 1.3 mu m electrooptical switch |
| CN101447639A (en) * | 2008-12-17 | 2009-06-03 | 中国科学院上海光学精密机械研究所 | All-solid-state electro-optical Q-switched green laser |
| CN101837515A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院安徽光学精密机械研究所 | Solar silicon cell nanosecond-pulse green laser scriber |
| CN102260910A (en) * | 2011-03-09 | 2011-11-30 | 元亮科技有限公司 | Raw material synthesis method for growing La3Ga5SiO14 (LGS, Langasite) crystals by using pulling method |
-
2013
- 2013-11-25 CN CN201310603654.9A patent/CN104659648B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251625A (en) * | 1997-03-12 | 2000-04-26 | 拉菲达发展公司 | Langasite wafer and method for producing the same |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
| JP2007112700A (en) * | 2005-09-22 | 2007-05-10 | Nec Tokin Corp | Crucible for growing crystal, single crystal, and method for growing the same |
| CN101335419A (en) * | 2008-07-30 | 2008-12-31 | 山东大学 | Human eye safe Raman laser based on lanthanum silicate crystal 1.3 mu m electrooptical switch |
| CN101447639A (en) * | 2008-12-17 | 2009-06-03 | 中国科学院上海光学精密机械研究所 | All-solid-state electro-optical Q-switched green laser |
| CN101837515A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院安徽光学精密机械研究所 | Solar silicon cell nanosecond-pulse green laser scriber |
| CN102260910A (en) * | 2011-03-09 | 2011-11-30 | 元亮科技有限公司 | Raw material synthesis method for growing La3Ga5SiO14 (LGS, Langasite) crystals by using pulling method |
Non-Patent Citations (2)
| Title |
|---|
| A. A. KAMINSKII 等: "Investigation of Trigonal (Lal-xNdx)3Ga5SiO14 Crystals", 《PHYS. STAT. SOL.A》 * |
| 王庆 等: "二极管直接抽运Nd:LGS激光器", 《中国激光》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105048274A (en) * | 2015-08-24 | 2015-11-11 | 山东大学 | Passive Q-switched pulse-type self-frequency doubling green light laser |
| CN105048274B (en) * | 2015-08-24 | 2018-07-06 | 山东大学 | A kind of passive Q-adjusted pulsed is from frequency doubling green light laser |
| CN108321672A (en) * | 2018-03-12 | 2018-07-24 | 中国科学院苏州生物医学工程技术研究所 | A kind of Bladder stone system of high-peak power |
| CN111555107A (en) * | 2020-05-15 | 2020-08-18 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
| CN111555107B (en) * | 2020-05-15 | 2021-07-23 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
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| CN104659648B (en) | 2018-12-14 |
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