CN101599612B - Pulse titanium-doped sapphire laser with high light-beam quality - Google Patents
Pulse titanium-doped sapphire laser with high light-beam quality Download PDFInfo
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- CN101599612B CN101599612B CN2008101144103A CN200810114410A CN101599612B CN 101599612 B CN101599612 B CN 101599612B CN 2008101144103 A CN2008101144103 A CN 2008101144103A CN 200810114410 A CN200810114410 A CN 200810114410A CN 101599612 B CN101599612 B CN 101599612B
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Abstract
The invention discloses a pulse titanium-doped sapphire laser with high light-beam quality, comprising a pump source, a laser resonant cavity and an optical adjusting system. The laser resonant cavity at least comprises a laser gain medium and an output mirror, wherein the laser gain medium is a lamellar titanium-doped sapphire crystal, the front surface of the lamellar titanium-doped sapphire crystal is plated by bicolor high-threshold dielectric coating which can make pump laser and oscillation laser resist reflection under vertical incidence, and the rear surface is plated by bicolor high-threshold dielectric coating which can make the pump laser and the oscillation laser totally reflect under vertical incidence; the optical adjusting system comprises at least one oxygen-free copper rotating platform; one side of the lamellar titanium-doped sapphire crystal plated by the bicolor high-threshold dielectric coating which can make the pump laser and the oscillation laser totally reflect is welded on to the oxygen-free copper rotating platform by welding flux; the oxygen-free copper rotating platform is fixed on a thermal sink which is externally connected with circulating water and can adjust the pitching state and the angle; and a triethyl citrate (TEC) cooling module is arranged between the rotating platform and the thermal sink. The invention has the advantages of simple structure, high output laser conversion efficiency, stable energy and high light beam quality.
Description
Technical field
The invention belongs to the Solid State Laser technology, be specifically related to a kind of pulse titanium-doped sapphire laser aid of novel high light beam quality.
Background technology
Ultrashort ultra-intense laser is one of research contents of laser technology and physics forefront over past ten years, because the sustained and rapid development of this research field, people have obtained in the laboratory focusing on power density greater than 10 at present
22W/cm
2Distribution of light intensity.Under the effect of this superhigh intensity light field, material will show unprecedented extreme nonlinear effect, and cause many brand-new physical phenomenons and physical problem, thereby the academic thought that obtains innovation for people provides the important advanced research platform.Ti sapphire laser amplifying device based on chirped pulse amplification, advantage such as high because of its gain, that the output energy is big and stable and reliable for performance, become the standard table top source of ultrashort, super strong laser pulse, had extremely extensive and important research and using value in the high field scientific domain
According to different energy output requirements, laser amplification device has multistage composition, can be divided into pre-amplification and main the amplification substantially, and the former belongs to the small-signal amplification, and the latter then belongs to strong signal and amplifies.Prime amplifier generally is divided into regenerative amplification and Duo Tong amplifies, and it will directly amplify through the mode-locked laser behind the broadening, can be amplified to the mJ magnitude to the pulse energy of nJ magnitude, and amplification ratio reaches 10
6～10
7Magnitude.In order to improve gain, also for reducing the destruction of laser pulse (comprising pump light and oscillation light) to the gain plane of crystal, the ti sapphire crystal length that people use in amplifier is generally all more than 10mm simultaneously.In the amplification process, after ti sapphire crystal is injected in the pumping laser pulse, have at least 30% pump energy be converted to heat energy be deposited in the crystal (
) [document 1, V.Ramanathan, J.Lee, S.B.Xu, X.M.Wang, L.Williams, W.Malphurs, and D.H.Reitze, " Analysis ofthermal aberrations in a high average power singlestage Ti:sapphireregenerative chirped pulse amplifier:Simulation and experimen ", Review ofScientific Instruments 77103103 (2006), document 2, G.Wagner, M.Shiler, and V.Wulfmeyer, " Simulations of thermal lensing of a Ti:Sapphire crysrtalend-pumped with high average power ", Optics Express 138045 (2005)], thermal source is identical with the spatial distribution of pumping laser in crystal, because the uneven distribution of temperature can produce as thermal lens in the laser medium active region, thermal effects such as thermally induced birefringence, these effects can cause the distortion of facular model in the chamber, thereby cause finally exporting the beam quality of laser and the reduction of pulse energy [document 3, W.Koechner, Solid-State Laser Engineering, 3rd ed., SpringerSeries in Optical Sciences, Berlin, Germany:Springer-Verlag (1992)], can cause the damage of crystal and instrument when serious owing to focusing effect.Therefore the elimination of high efficiency heat radiation and thermal effect that temperature difference in the laser medium active region is caused normally designs laser, especially one of the key factor that need consider when macro-energy, high repetition frequency laser system.
For reducing influence of thermal effect as much as possible, people once taked multiple measure that the ti sapphire crystal in the laser amplifier is carried out refrigeration, cool off as boiler water circulation, thermoelectric cooling [document 4, N.Zhavoronkov and G.Korn, " Regenerative amplification of femtosecond laserpulses in Ti:sapphire at multikilohertz repetition rates " Opt.Lett.29 198 (2004)] utilize complicated Dewar container for liquefied nitrogen device to cool off [document 5 even, S.Backus, R.Bartels, S.Thompson, R.Dollinger, H.C.Kapteyn, and M.M.Murnane, " High-efficiency; single-stage 7-kHz high-average-power ultrafast lasersystem ", Opt.Lett 26465 (2001)] or the like, but the heat conduction of crystals needs certain hour after all, therefore its temperature inside gradient still exists, and can not eliminate the thermal lens phenomenon fully.
Summary of the invention
Export the problems referred to above of the ti sapphire laser device existence of energy at existing millijoule level, the purpose of this invention is to provide a kind of simple in structure, the pulse titanium-doped sapphire laser of easy to operate high light beam quality, and can effectively eliminate the influence of crystal internal heat effect, thereby improve the beam quality and the pulse energy of final output laser.
For achieving the above object, the invention provides a kind of pulse titanium-doped sapphire laser of high light beam quality, comprise pumping source, laserresonator, the optical adjustment system, described laserresonator comprises a gain medium and an outgoing mirror at least, described gain medium is the thin slice ti sapphire crystal, the front surface of described thin slice ti sapphire crystal is coated with and can makes pumping laser and oscillating laser anti-reflection double-colored high threshold deielectric-coating under vertical incidence, the rear surface is coated with the double-colored high threshold deielectric-coating that pumping laser and oscillating laser are all-trans under vertical incidence, described optical adjustment system comprises the rotating platform of at least one oxygen-free copper, the side that described thin slice ti sapphire crystal is coated with the double-colored high threshold deielectric-coating that is all-trans is welded on the described rotating platform with scolder, described rotating platform is fixed on an external recirculated water and can regulates on pitching and angle heat sink, rotating platform and heat sink between be provided with the TEC refrigerating sheet.
Further, when described laserresonator is linear refrative cavity or annular chamber, need to increase some speculums as the chamber mirror, speculum both used as refrative mirror or as end mirror.。
Further, the chilling temperature of described TEC refrigerating sheet is between-40 ℃～15 ℃, when temperature when zero degrees celsius is following, described thin slice ti sapphire crystal need be encapsulated in the vacuum chamber.
Further, described outgoing mirror is level crossing or long concave mirror or the convex mirror of radius of curvature.
Further, described pumping source is the green (light) laser of any pulse, adopts the mode of end pumping.
Further, the green (light) laser of described any pulse is specially frequency multiplication Nd:YAG laser or frequency multiplication Nd:YLF laser.
Further, described resonant cavity is linear cavity or annular chamber.
Further, also be provided with the wavelength tuning element in the described laserresonator, laser is realized the tuning of centre wavelength and bandwidth.
The invention provides a kind of new method of utilizing the thin slice ti sapphire crystal as gain medium, than traditional block or bar-shaped ti sapphire crystal, the thin slice ti sapphire crystal can efficiently radiates heat, avoids the generation of thermal lensing effect.One of them surface of thin slice is coated with the double-colored high threshold deielectric-coating that pumping laser and oscillating laser are all-trans under vertical incidence, can be used as total reflective mirror and use in laser cavity, has reduced the quantity of optical element, has simplified the chamber type.Compare with the ti sapphire laser that adopts traditional transmission-type bulk or bar-shaped gain crystal to obtain the output of millijoule level energy, the present invention is simple in structure, laser cavity only comprises a titanium-doped sapphire thin slice and an outgoing mirror, only need regulate the titanium precious stone laser output that a few optical element just can obtain millijoule level energy, and output laser-conversion efficiency height, energy stabilization, good beam quality.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Fig. 1 is the structural representation of the embodiment of the invention 1 and embodiment 2;
Fig. 2 is the structural representation of the embodiment of the invention 3, embodiment 4 and embodiment 5;
Fig. 3 is the structural representation of the embodiment of the invention 6;
Fig. 4 is the structural representation of the embodiment of the invention 7;
Fig. 5 is the structural representation of the embodiment of the invention 8;
Fig. 6 is the cooling structure schematic diagram of thin slice ti sapphire crystal of the present invention.
Embodiment
Embodiment 1:
As shown in Figure 1, laserresonator is made of thin slice ti sapphire crystal 2 and flat output mirror 3.As shown in Figure 6, thin slice ti sapphire crystal 2, be of a size of Φ 6mm * 2mm, front surface 21 is as the transmission plane of laser, be coated with under the vertical incidence 520nm～540nm and double-colored high threshold deielectric-coating that 750nm～the 850nm wave band is anti-reflection, rear surface 22 is as the reflecting surface of laser, is coated with under the vertical incidence the double-colored high threshold deielectric-coating that 520nm～540nm and 750nm～850nm wave band are all-trans.Not only as gain media, its rear surface is also as the plane chamber mirror that is all-trans in laser cavity for thin slice ti sapphire crystal 2.As shown in Figure 6, the one side that thin slice ti sapphire crystal 2 is coated with the film that is all-trans is welded on the oxygen-free copper rotating platform 101 as scolder with indium or gold.Rotating platform 101 be fixed on can regulate pitching and angle heat sink 102 on, the water-cooled circulation is inserted with rubber tube in heat sink 102 two ends, water inlet pipe is 104, outlet pipe is 105.Rotating platform and heat sink between be a TEC (Thermoelectric cooling, thermoelectric-cooled) refrigerating sheet 103, refrigerating sheet 103 external constant-current supply refrigeration, and chilling temperature is controlled at 10 ℃ by temperature regulating device.Flat output mirror 3 melts quartz wafer for the plane, and being coated with under the vertical incidence in 750nm～850nm wave band transmitance is 20% high threshold deielectric-coating, places on the micropositioning stage of two-dimensional adjustable.Two plane total reflective mirrors are formed the device 7 of climbing, and are coated with the high threshold deielectric-coating that under 45 ° of incidence angles 520nm～540nm wave band is all-trans, and after the laser of pump laser 1 output reflected via the device of climbing, the light height was reduced to 65mm.Plane total reflective mirror 4,5 is coated with the high threshold deielectric-coating that under 45 ° of incidence angles 520nm～540nm wave band is all-trans, and places on the micropositioning stage of two-dimensional adjustable, regulates the position of plane total reflective mirror 4,5, makes pumping laser incide the center of thin slice ti sapphire crystal 2.The focal length of condenser lens 6 is 500mm, be coated with under the vertical incidence high threshold deielectric-coating to 520nm～the 540nm wave band is anti-reflection, place on the adjusting bracket of scalable lifting and position, the left and right sides, the position of regulating condenser lens 6 guarantees that pumping laser is incident in the center of thin slice ti sapphire crystal 2, and the spot diameter in thin slice ti sapphire crystal 2 is about 2mm.Along the central axis revolving-turret of thin slice ti sapphire crystal 2 logical light faces, make 2 pairs of pump lights of thin slice ti sapphire crystal absorb the strongest.The position of regulating thin slice ti sapphire crystal 2 and flat output mirror 3 makes both parallel, and oscillating laser and the pumping laser angle that incides thin slice ti sapphire crystal 2 are less than 5 °, distance between thin slice ti sapphire crystal 2 and the flat output mirror 3 is 300mm, and output laser light height is 65mm.
Nd:YAG (neodymium-doped yttrium-aluminum garnet) frequency double laser that pump laser 1 is produced for Spectra-Physics company, wavelength 532nm, repetition rate 10Hz, pulse duration 7ns.The pump light of pump laser 1 output 50mJ energy can obtain the titanium precious stone laser output of 8mJ, repetition rate 10Hz.Pumping laser adopts the end pumping mode, be focused into by condenser lens and be mapped in the titanium-doped sapphire thin slice, thin slice absorptive pumping light produces stimulated radiation, is not absorbed completely pump light through the reflecting surface reflection of titanium-doped sapphire thin slice, enter once more in the titanium-doped sapphire thin slice, absorbed by secondary.
TEC refrigeration can be arranged on chilling temperature between-40 ℃～15 ℃ by temperature regulating device, and accuracy of temperature control is better than ± 0.50C.When temperature during in subzero, need be in vacuum chamber with crystal package.Chiller can also be water cooling plant or air cooling equipment or other low-temperature refrigeration devices
Laserresonator can be a linear cavity, also can be annular chamber.When adopting linear refrative cavity or annular chamber, need to increase some speculums as the chamber mirror, speculum both can be used as refrative mirror and had used, and also can be used as end mirror and used.According to speculum reflection angle to laser in the chamber, to its be coated with under 0～5 ° of incidence angle or 45 ° of incidence angles under high threshold deielectric-coating that 750nm～850nm wave band is all-trans.In linear refrative cavity or annular chamber, the thin slice ti sapphire crystal can be used as the low-angle refrative mirror or the reflection end mirror uses.
Outgoing mirror also can adopt radius of curvature long concave mirror or convex mirror.Do corresponding adjustment with the distance of titanium-doped sapphire thin slice according to radius of curvature size needs.
Also can adopt the polylith titanium gem crystal as gain medium.For example, for two gain crystal, then adopt two-way pumping optical pumping.
Embodiment 2:
As shown in Figure 1, Nd:YLF (neodymium-doped yttrium-fluoride lithium) frequency double laser that pump laser 1 is produced for Coherent company, wavelength 527nm, repetition rate 1kHz is about pulse duration 200ns.Except that pump laser 1, the concrete parameter of other each elements is identical with embodiment 1 with installation.It is 65cm that the position of regulating condenser lens 6 makes its distance with thin slice ti sapphire crystal 2, the pump light of pump laser 1 output 8mJ energy, and the titanium precious stone laser that can obtain 1.5mJ is exported repetition rate 1kHz.
Embodiment 3:
As shown in Figure 2, laserresonator is made of thin slice ti sapphire crystal 2, flat output mirror 3 and concave mirror 8.The radius of curvature of concave mirror 8 is 2m, and concave surface is coated with the high threshold deielectric-coating that 0～5 ° of incidence angle is all-trans to 750nm～850nm wave band.Except that concave mirror 8, the concrete parameter of other each elements is identical with embodiment 1, installs as shown in Figure 2.Concave mirror 8 places on the micropositioning stage of two-dimensional adjustable, and it is 54cm that the position of regulating concave mirror 8 makes the distance of itself and thin slice ti sapphire crystal 2, and the angle folding of concave mirror 8 is less than 5 °.Regulate flat output mirror 3, incident light is returned along former road, flat output mirror 3 is 30cm with the distance of concave mirror 8.
Regulate the position of condenser lens 6, making the distance of itself and thin slice ti sapphire crystal 2 is 61cm.The pump light of pump laser 1 output 6.5mJ energy can obtain the titanium precious stone laser output of 2mJ, repetition rate 10Hz.
Regulate the position of condenser lens 6, making the distance of itself and thin slice ti sapphire crystal 2 is 62cm.The pump light of pump laser 1 output 12mJ energy can obtain the titanium precious stone laser output of 3.5mJ, repetition rate 10Hz.
Embodiment 4:
As shown in Figure 2, the Nd:YLF frequency double laser that pump laser 1 is produced for Coherent company, wavelength 527nm, repetition rate 1kHz is about pulse duration 200ns.Except that pump laser 1, the concrete parameter of other each elements is identical with embodiment 3 with installation.It is 50cm that the position of regulating flat output mirror 3 makes its distance with concave mirror 8, and it is 71cm that the position of adjusting condenser lens 6 makes the distance of itself and thin slice ti sapphire crystal 2.The pump light of pump laser 1 output 8mJ energy can obtain the titanium precious stone laser output of 2mJ, repetition rate 1kHz.
Embodiment 5:
As shown in Figure 2, to be coated with under the vertical incidence in 750nm～850nm wave band transmitance be 10% high threshold deielectric-coating to flat output mirror 3.Except that flat output mirror 3, the concrete parameter of other each elements and installation are as embodiment 4.The pump light of pump laser 1 output 8mJ energy can obtain the titanium precious stone laser output of 2.5mJ, repetition rate 1kHz.
Embodiment 6:
As shown in Figure 3, the concrete parameter of each element is identical with embodiment 4.Regulating thin slice ti sapphire crystal 2 makes the angle folding of oscillating laser in the chamber less than 5 °, regulate flat output mirror 3, incident light is returned along former road, and flat output mirror 3 is 42cm with the distance of thin slice ti sapphire crystal 2, and concave mirror 8 is 50cm with the distance of thin slice ti sapphire crystal 2.The pump light of pump laser 1 output 8mJ energy can obtain the titanium precious stone laser output of 2.1mJ, repetition rate 1kHz.
Embodiment 7:
As shown in Figure 4, laserresonator is an annular chamber, is made of thin slice ti sapphire crystal 2, concave mirror 8, speculum 9 and flat output mirror 3.Speculum 9 is coated with 0～5 ° of incidence angle to the high threshold deielectric-coating that 750nm～850nm wave band is all-trans, and places on the micropositioning stage of two-dimensional adjustable.Except that speculum 9, the concrete parameter of other each elements is identical with embodiment 4.Regulate each element in the chamber, make separately angle folding all less than 5 °, thin slice ti sapphire crystal 2 and concave mirror 8 be apart from 50cm, and thin slice ti sapphire crystal 2 and speculum 9 are apart from 31cm, outgoing mirror 3 and speculum 9 are apart from 24cm, and concave mirror 8 and outgoing mirror 3 are apart from 43cm.The pump light of pump laser 1 output 8mJ energy can obtain 2 bundle titanium precious stone laser outputs, and the energy of every Shu Jiguang is 0.8mJ, repetition rate 1kHz.
Embodiment 8:
As shown in Figure 5, laserresonator is made of thin slice ti sapphire crystal 2, flat output mirror 3 and concave mirror 8, inserts prism 10 and slit 11 in the chamber as the wavelength tuning element.Thin slice ti sapphire crystal 2 and concave mirror 8 are apart from 50cm, and concave mirror 8 and prism 10 are apart from 27cm, and prism 8 and outgoing mirror 3 are apart from 10cm, and slit 11 and outgoing mirror 3 are apart from 2cm.Prism 10 is a quartz prism, and drift angle is 69 °, and the base is of a size of 2cm, is positioned on the translation stage of horizontal rotating table and 40 * 40mm, places with Brewster's angle.The blade of two apportions and the oscillating laser left and right sides constitutes 11, two blades of slit and places respectively on the translation stage of 40 * 40mm.Except that prism 10 and slit 11, the concrete parameter of other each elements is identical with embodiment 4.The translation stage moving direction is vertical with the laser transmission direction.Move one of them blade output laser center wavelength trend long wave, move another blade output laser center wavelength trend shortwave, the width output laser bandwidth that changes slit 11 changes thereupon.
A logical light face as the ti sapphire laser crystal of gain medium among the present invention is coated with oscillation light and all anti-reflection high threshold deielectric-coating of pump light, and another face is coated with oscillation light and all high anti-high threshold deielectric-coating of pump light.This crystal double as gain medium and laser mirror are used to form laserresonator.In practical structure, the reflecting surface of this thin slice ti sapphire crystal contacts fixing with metal heat sink, by cooling to metal heat sink, crystal not only can be operated under the low-temperature condition, and in the cooling surface direction, therefore the direction that is normal beam does not have thermal gradient, has avoided in the conventional scheme thermal lensing effect intrinsic in the gain media, thereby has helped obtaining high laser gain and high beam quality.Specific embodiment can be a linear laser cavity, also can be annular cavity laser.Because the present invention unites two into one a speculum and gain medium, so the Laser Devices realized also have, and compact structure and stable performance are convenient to practical application more in addition.In order more effectively to suppress influence of thermal effect, further improve the beam quality of amplifying laser, proposing to have adopted thickness in this patent is that two millimeters thin slice ti sapphire crystal is as gain medium, adopt the mode of end face cooling, thereby greatly reduce the influence of thermal lensing effect facular model.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (8)
1. the pulse titanium-doped sapphire laser of a high light beam quality, comprise pumping source, laserresonator, the optical adjustment system, described laserresonator comprises a gain medium and an outgoing mirror at least, it is characterized in that, described gain medium is the thin slice ti sapphire crystal, the front surface of described thin slice ti sapphire crystal is coated with and can makes pumping laser and oscillating laser anti-reflection double-colored high threshold deielectric-coating under vertical incidence, the rear surface is coated with the double-colored high threshold deielectric-coating that pumping laser and oscillating laser are all-trans under vertical incidence, described optical adjustment system comprises the rotating platform of at least one oxygen-free copper, the side that described thin slice ti sapphire crystal is coated with the double-colored high threshold deielectric-coating that is all-trans is welded on the described rotating platform with scolder, described rotating platform is fixed on an external recirculated water and can regulates on pitching and angle heat sink, rotating platform and heat sink between be provided with the TEC refrigerating sheet.
2. the pulse titanium-doped sapphire laser of high light beam quality according to claim 1, it is characterized in that, when described laserresonator is linear refrative cavity or annular chamber, need to increase some speculums as the chamber mirror, speculum both used as refrative mirror or as end mirror.
3. the pulse titanium-doped sapphire laser of high light beam quality according to claim 1, it is characterized in that, the chilling temperature of described TEC refrigerating sheet is between-40 ℃～15 ℃, when temperature when zero degrees celsius is following, described thin slice ti sapphire crystal need be encapsulated in the vacuum chamber.
4. the pulse titanium-doped sapphire laser of high light beam quality according to claim 1 is characterized in that, described outgoing mirror is level crossing or long concave mirror or the convex mirror of radius of curvature.
5. the pulse titanium-doped sapphire laser of high light beam quality according to claim 1 is characterized in that, described pumping source is the green (light) laser of any pulse, adopts the mode of end pumping.
6. the pulse titanium-doped sapphire laser of high light beam quality according to claim 5 is characterized in that, the green (light) laser of described any pulse is specially frequency multiplication Nd:YAG laser or frequency multiplication Nd:YLF laser.
7. the pulse titanium-doped sapphire laser of high light beam quality according to claim 1 is characterized in that, described resonant cavity is linear cavity or annular chamber.
8. the pulse titanium-doped sapphire laser of high light beam quality according to claim 1 is characterized in that, also is provided with the wavelength tuning element in the described laserresonator, and laser is realized the tuning of centre wavelength and bandwidth.
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| CN102769244A (en) * | 2012-07-20 | 2012-11-07 | 北京无线电计量测试研究所 | Regenerative laser amplifier with extremely-simple cavity |
| CN104028919B (en) * | 2013-03-06 | 2016-07-06 | 中国科学院理化技术研究所 | The welding system of on-line monitoring laser crystal transmitance and on-line monitoring method thereof |
| CN103311789A (en) * | 2013-06-24 | 2013-09-18 | 清华大学 | Thin laser medium laser device |
| JP6026467B2 (en) * | 2013-09-18 | 2016-11-16 | 富士フイルム株式会社 | Solid-state laser device and photoacoustic measuring device |
| CN103474865A (en) * | 2013-09-27 | 2013-12-25 | 北京无线电计量测试研究所 | Device used for cooling sheet-shaped laser gain media |
| CN105047590B (en) * | 2015-08-11 | 2017-12-15 | 上海华力微电子有限公司 | A kind of spectroreflectometer with sapphire substrate |
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| CN1471203A (en) * | 2002-07-22 | 2004-01-28 | 中国科学院物理研究所 | High-power full-solid-state blue laser |
| CN1671016A (en) * | 2005-04-18 | 2005-09-21 | 北京工业大学 | Side surface pumped thin disk laser and method for making same |
| CN1845397A (en) * | 2006-04-12 | 2006-10-11 | 中国科学院上海光学精密机械研究所 | Tunable laser with Cr, Yb co-doped yttrium aluminium garnet crystal |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1471203A (en) * | 2002-07-22 | 2004-01-28 | 中国科学院物理研究所 | High-power full-solid-state blue laser |
| CN1671016A (en) * | 2005-04-18 | 2005-09-21 | 北京工业大学 | Side surface pumped thin disk laser and method for making same |
| CN1845397A (en) * | 2006-04-12 | 2006-10-11 | 中国科学院上海光学精密机械研究所 | Tunable laser with Cr, Yb co-doped yttrium aluminium garnet crystal |
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