CN103811990A - Terahertz parameter source and application thereof on the basis of potassium titanium oxide arsenate crystals - Google Patents

Terahertz parameter source and application thereof on the basis of potassium titanium oxide arsenate crystals Download PDF

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CN103811990A
CN103811990A CN201410064072.2A CN201410064072A CN103811990A CN 103811990 A CN103811990 A CN 103811990A CN 201410064072 A CN201410064072 A CN 201410064072A CN 103811990 A CN103811990 A CN 103811990A
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terahertz
crystal
arsenic acid
acid titanyl
titanyl potassium
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CN103811990B (en
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张行愚
肖炅
王伟涛
王青圃
丛振华
陈晓寒
刘兆军
秦增光
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Shandong University
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Shandong University
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Abstract

Disclosed is a terahertz parameter source on the basis of potassium titanium oxide arsenate crystals. The terahertz parameter source comprises a laser pumping system, a terahertz parametric device and a cooling system, wherein the terahertz parametric device comprises the potassium titanium oxide arsenate crystals, pumped laser emitted by the laser pumping system illuminates along the terahertz parametric device, and the terahertz parameter source is formed by scattering process of stimulated excitons of the potassium titanium oxide arsenate crystals. The output frequency range of terahertz waves is from 3.5THz to 6.5THz. The terahertz parametric device further comprises a rear cavity mirror and an output mirror, and the laser pumping system emits the laser sequentially along the rear cavity mirror of the terahertz parametric device, the potassium titanium oxide arsenate crystals and the output mirror of the terahertz parametric device. According to the terahertz parameter source and the application thereof on the basis of the potassium titanium oxide arsenate crystals, nonlinear crystals of potassium titanium oxide arsenate are used, the nonlinearity gain of the crystals is high, meanwhile, high damage threshold is achieved, and tunable terahertz radiation waves in the frequency range from 3.5THz to 6.5THz can be obtained through an angle tuning mode.

Description

A kind of Terahertz parameter source and application thereof based on arsenic acid titanyl potassium crystal
Technical field
The present invention relates to a kind of Terahertz parameter source and application thereof based on arsenic acid titanyl potassium crystal, belong to the technical field in Terahertz parameter source.
Background technology
Being excited exciton scattering is a kind of important technology that produces terahertz emission, is excited that exciton scattering can obtain as seen, near-infrared, and the tunable laser of terahertz wave band by some crystal.THz source with other technologies, as the THz source of optical rectification, quantum cascade laser and electricity is compared, this based on be excited the Terahertz parameter source of exciton scattering have can encapsulation and integration, working and room temperature, easy to use, be convenient to the advantages such as tuning, line width.Terahertz parameter source is one of the study hotspot in Terahertz generation field always.Now there are the report about Terahertz parameter source in a large number, the crystal LiNbO that they all utilize both at home and abroad 3or MgO:LiNbO 3as the working media of non-linear conversion, can obtain tunable terahertz emission source in 0.6-3THz frequency range.The minimum A1 symmetric vibration mould of arsenic acid titanyl potassium crystal is 233.8cm -1, this diaphragm has infrared and Raman active simultaneously, can obtain the tunable terahertz emission source in 3.5THz arrives 6.5THz frequency range by angle tuning, has expanded based on LiNbO 3the Terahertz frequency range in the Terahertz parameter source of crystal, does not also find the Terahertz parameter source of realizing with this crystal so far.
Summary of the invention
The invention provides a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal.The present invention utilize arsenic acid titanyl potassium crystal be excited exciton scattering process form Terahertz parameter source.
The present invention also provides the application in the above-mentioned Terahertz parameter source based on arsenic acid titanyl potassium crystal.Tunable THz wave output in 3.5-6.5THz frequency range has been realized in this Terahertz parameter source.
Technical scheme of the present invention is as follows:
Based on a Terahertz parameter source for arsenic acid titanyl potassium crystal, comprise laser pumping system, Terahertz parametric device and cooling system; Described Terahertz parametric device comprises arsenic acid titanyl potassium crystal, described laser pumping system send pumping laser along Terahertz parametric device irradiate, described arsenic acid titanyl potassium crystal be excited exciton scattering process form Terahertz parameter source.
Preferred according to the present invention, the THz wave reference frequency output in described Terahertz parameter source is 3.5-6.5THz.
Preferred according to the present invention, described Terahertz parametric device also comprises the Effect of Back-Cavity Mirror of Terahertz parametric device, the outgoing mirror of Terahertz parametric device, and the laser that described laser pumping system is sent penetrates successively along the outgoing mirror of Effect of Back-Cavity Mirror, arsenic acid titanyl potassium crystal and the Terahertz parametric device of Terahertz parametric device.
Preferred according to the present invention, described arsenic acid titanyl potassium crystal is nonlinear crystal arsenic acid titanyl potassium.The laser beam being produced by laser pumping system is through the nonlinear crystal arsenic acid titanyl potassium in Terahertz parametric device, described nonlinear crystal arsenic acid titanyl potassium has Raman and infrared active diaphragm, exciton scattering is excited in generation, produce non-linear parameter process, angle rotating platform by described Terahertz parametric device changes pump light and incides the angle in arsenic acid titanyl potassium, can obtain 3.5THz to the tunable Terahertz parameter source in 6.5THz frequency range.
Preferred according to the present invention, cut direction θ=90 ° of the crystal of described nonlinear crystal arsenic acid titanyl potassium, φ is arbitrarily angled, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, the length of nonlinear crystal is l, and the width of nonlinear crystal is d.
Preferred according to the present invention, the cut direction of the crystal of described nonlinear crystal arsenic acid titanyl potassium as shown in Figure 1, x, y, z represents respectively the x axle of arsenic acid titanyl potassium crystal, y axle and z direction of principal axis, the cutting angle φ of the crystal x axle of Terahertz exit facet and nonlinear crystal arsenic acid titanyl potassium 1scope be-45 ° to-15 °.On Terahertz exit facet, there is total reflection in incident pumping laser and the Stokes light of being excited to produce in exciton scattering process, and THz wave can vertically or be bordering on perpendicular to this surface output, crystal length is l, and width is d, thickness is h, and the size of l and d meets l+d/tan φ 1<-d/tan φ 1<l, the width d of crystal and thickness h can be selected according to pump spot size.
Preferred according to the present invention, the both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium are all coated with anti-reflection film.The wave-length coverage of anti-reflection film can decide according to the wavelength of the pumping source of selecting; Do polishing at THz wave exit facet.
Preferred according to the present invention, the Effect of Back-Cavity Mirror of described Terahertz parametric device is coated with the high-reflecting film at Stokes wave band.Make the plated film of the outgoing mirror of described Terahertz parametric device there is certain transmitance at Stokes wave band.
Preferred according to the present invention, cut direction θ=90 ° of the crystal of described nonlinear crystal arsenic acid titanyl potassium, the span of φ is-10 ° to+10 °, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, the length of nonlinear crystal is l, and the width of nonlinear crystal is d; Thickness is h, crystal length l, and width d, thickness h can be selected with the area of pumping laser hot spot according to the actual requirements.
Described Terahertz parametric device also comprises THz wave coupling unit, and described THz wave coupling unit is silicon materials prisms, described silicon materials prism and nonlinear crystal seamless contact of xz face.The quantity of prism and size can determine according to the size of nonlinear crystal.
Preferred according to the present invention, the both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium, yz face is all coated with anti-reflection film; Do polishing at THz wave exit facet (xz face).The wave-length coverage of described anti-reflection film can decide according to the wavelength of the pumping source of selecting.
Preferred according to the present invention, the Effect of Back-Cavity Mirror of described Terahertz parametric device is coated with the high-reflecting film at Stokes wave band.The plated film of the outgoing mirror of described Terahertz parametric device has certain transmitance at Stokes wave band.
Preferred according to the present invention, the laser system of the 1-100Hz of the low repetition of pulse laser system, flash lamp pumping or LD pumping that the continuous laser system that described laser pumping system is LD pumping, quasi-continuous repetition rate are 100Hz-100kHz; The power density that described laser pumping system provides in arsenic acid titanyl potassium nonlinear crystal is not less than 10MW/cm 2; Described cooling system is circulating water cooling system or semiconductor refrigeration system.Described circulating water---crystal on side face is all used with the metal derby of pipeline and is encased, and continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal; Described semiconductor refrigerating---crystal on side face is surrounded by semiconductor refrigerating piece.
A kind of method of work of the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows:
The pump light that laser pumping origin system sends enters into the arsenic acid titanyl potassium nonlinear crystal of described Terahertz parametric device, with in arsenic acid titanyl potassium crystal, there is Raman and infrared-active crystal diaphragm simultaneously and interact, exciton scattering is excited in generation, in Terahertz parametric device, form Stokes laser, produce terahertz emission ripple simultaneously, and utilize silicon prism-coupled array coupled modes or the mode of launching by vertical surface obtains terahertz emission output.
Advantage of the present invention is:
A kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal of the present invention, use a kind of new nonlinear crystal arsenic acid titanyl potassium, this crystal non-linear gain is higher, there is high damage threshold simultaneously, can obtain 3.5THz to the tunable terahertz emission ripple in 6.5THz frequency range by the mode of angle tuning.
Accompanying drawing explanation
Fig. 1 is the cut direction schematic diagram of the crystal of the arsenic acid of nonlinear crystal described in the present invention titanyl potassium;
Fig. 2 is to be the light channel structure schematic diagram in the arsenic acid titanyl potassium Terahertz parameter source of exocoel pumping of the present invention, vertical surface transmitting;
The overall dimension of nonlinear crystal arsenic acid titanyl potassium in the arsenic acid titanyl potassium Terahertz parameter source of Fig. 3 exocoel pumping of the present invention, vertical surface transmitting;
Fig. 4 is the light channel structure schematic diagram in the arsenic acid titanyl potassium Terahertz parameter source of exocoel pumping of the present invention, silicon prism array coupling output;
Fig. 5 is the q-operation of LD end pumping of the present invention, light channel structure schematic diagram inner chamber pumping, silicon prism array coupling Terahertz parameter source output, based on arsenic acid titanyl potassium crystal;
Fig. 6 is the q-operation of LD profile pump of the present invention, the light channel structure schematic diagram in arsenic acid titanyl potassium Terahertz parameter source inner chamber pumping, vertical surface transmitting;
Fig. 7 is the light channel structure schematic diagram in the arsenic acid titanyl potassium Terahertz parameter source of exocoel pumping of the present invention, silicon prism array coupling output;
Wherein: 1. laser pumped by pulsed laser source, 2. beam expander or contracting bundle device, 3. half-wave plate, 4. the Effect of Back-Cavity Mirror of Terahertz parametric device, 5. the nonlinear crystal arsenic acid titanyl potassium of Terahertz parametric device, 6. the outgoing mirror of Terahertz parametric device, 7, angle rotating platform, 8. Terahertz silicon prism-coupled parts, 9. laser diode LD, 10. optical fiber, 11. coupled lens groups, 12. pumped laser system resonant cavity Effect of Back-Cavity Mirror, 13. cooling constant temperature systems, 14. gain mediums, 15. Q-switchs, 16. polarizers, 17. pumped laser system resonant cavity outgoing mirrors, 18.LD side pumping module.
Embodiment
Now for Figure of description and embodiment, the present invention is described in detail, but is not limited to this.
Embodiment 1,
Based on a Terahertz parameter source for arsenic acid titanyl potassium crystal, comprise laser pumping system, Terahertz parametric device and cooling system; Described Terahertz parametric device comprises arsenic acid titanyl potassium crystal, described laser pumping system send pumping laser along Terahertz parametric device irradiate, described arsenic acid titanyl potassium crystal be excited exciton scattering process form Terahertz parameter source.
The THz wave reference frequency output in described Terahertz parameter source is 3.5-6.5THz.
Described Terahertz parametric device also comprises the Effect of Back-Cavity Mirror of Terahertz parametric device, the outgoing mirror of Terahertz parametric device, and the laser that described laser pumping system is sent penetrates successively along the outgoing mirror of Effect of Back-Cavity Mirror, arsenic acid titanyl potassium crystal and the Terahertz parametric device of Terahertz parametric device.
Described arsenic acid titanyl potassium crystal is nonlinear crystal arsenic acid titanyl potassium.The laser beam being produced by laser pumping system is through the nonlinear crystal arsenic acid titanyl potassium in Terahertz parametric device, described nonlinear crystal arsenic acid titanyl potassium has Raman and infrared active diaphragm, exciton scattering is excited in generation, produce non-linear parameter process, angle rotating platform by described Terahertz parametric device changes pump light and incides the angle in arsenic acid titanyl potassium, can obtain 3.5THz to the tunable Terahertz parameter source in 6.5THz frequency range.
Cut direction θ=90 ° of the crystal of described nonlinear crystal arsenic acid titanyl potassium, φ is arbitrarily angled, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, the length of nonlinear crystal is l, and the width of nonlinear crystal is d.
The cut direction of the crystal of described nonlinear crystal arsenic acid titanyl potassium as shown in Figure 1, x, y, z represents respectively the x axle of arsenic acid titanyl potassium crystal, y axle and z direction of principal axis, the cutting angle φ of the crystal x axle of Terahertz exit facet and nonlinear crystal arsenic acid titanyl potassium 1scope be-45 ° to-15 °.On Terahertz exit facet, there is total reflection in incident pumping laser and the Stokes light of being excited to produce in exciton scattering process, and THz wave can vertically or be bordering on perpendicular to this surface output, crystal length is l, and width is d, thickness is h, and the size of l and d meets l+d/tan φ 1<-d/tan φ 1<l, the width d of crystal and thickness h can be selected according to pump spot size.
The both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium are all coated with anti-reflection film.The wave-length coverage of anti-reflection film can decide according to the wavelength of the pumping source of selecting; Do polishing at THz wave exit facet.
The Effect of Back-Cavity Mirror of described Terahertz parametric device is coated with the high-reflecting film at Stokes wave band.Make the plated film of the outgoing mirror of described Terahertz parametric device there is certain transmitance at Stokes wave band.
Below in conjunction with accompanying drawing 2, the present embodiment is described in detail: as shown in Figure 2, a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal comprises laser pumped by pulsed laser source 1, beam expander or contracting bundle device 2, it is parallel with the z axle of nonlinear crystal arsenic acid titanyl potassium 5 that half-wave plate 3 is adjusted the polarization state of pumping laser, Terahertz parametric device Effect of Back-Cavity Mirror 4 and Terahertz parametric device outgoing mirror 6 form the resonant cavity of tera-hertz parametric oscillator, and be jointly fixed on angle rotating platform 7 with nonlinear crystal arsenic acid titanyl potassium 5, form Terahertz parametric device; The pumping source system in laser pumped by pulsed laser source 1, beam expander or contracting bundle device 2 and the common composition of half-wave plate 3 Terahertz parameter source.
A kind of method of work of the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows: the laser that send in laser pumped by pulsed laser source 1 is adjusted laser facula size by beam expander or contracting bundle device 2, then after adjusting polarization state by half-wave plate 8, enter in Terahertz parametric device, because the A1 diaphragm 233.8cm-1 of arsenic acid titanyl potassium crystal wherein has Raman and infrared active simultaneously, thereby can produce and be excited exciton scattering, produce Stokes light, the position generation Terahertz output of total reflection occurs at Stokes simultaneously.Arsenic acid titanyl potassium crystal 5, as nonlinear dielectric, can effectively produce Stokes and Terahertz conversion, changes the incident angle of incident light, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal by anglec of rotation rotating platform ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.
The Nd:YAG adjusting Q pulse laser that described laser pumped by pulsed laser source 1 is flash lamp pumping or LD pumping, wavelength is 1064.2nm, and repetition rate is the adjustable ns level pulse laser of 1-100Hz, and maximum pump energy is 1J, and pulse duration is 8ns.
Described nonlinear crystal arsenic acid titanyl potassium 5, the cutting method of described nonlinear crystal as shown in Figure 3, x, y, z is the x axle of crystal, y axle, z direction of principal axis, cut direction θ=90 °, φ=-30 °, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, nonlinear crystal is l=30mm along x shaft length, be d=15mm along the length of y axle, be 8mm along the thickness of z axle, the size cut direction of described nonlinear crystal is not limited to this, φ can be arbitrarily angled, the size of crystal can be come to determine as required.
The both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium 5 are all coated with the anti-reflection film of 1000nm-1100nm wavelength, side polishing.
The terahertz emission wave frequency of described Terahertz parameter source output is tunable, is 1.7-6.9 °, to obtain tuning range as 3.5-6.5THz by adjusting pump light and the shooting angle scope of Stokes laser outside nonlinear crystal.Described Stokes laser is to be excited the light beam close with pump light frequency that produce in exciton scattering process.
The Effect of Back-Cavity Mirror 4 of described Terahertz parametric device is coated with the anti-reflection film of pump light wave band and the high-reflecting film of 1000nm-1100nm wave band; Outgoing mirror 5 is coated with transmittance at 1000-1100nm wave band.High-reflecting film described herein, its reflectivity is greater than 95%, and transmittance scope described herein is 0.01%~99.99%.
Described cooling system is circulating water---crystal on side face is all used with the metal derby of pipeline and is encased, and continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal.
Workflow: it is 2.5mm that the 1064.2nm laser that Nd:YAG adjusting Q pulse laser pumping source 1 sends is adjusted laser spot diameter by beam expander or contracting bundle device 2, then adjust by half-wave plate 8 the z axle that laser polarization state is parallel to arsenic acid titanyl potassium crystal, enter in Terahertz parametric device, because the A1 diaphragm 233.8cm-1 of arsenic acid titanyl potassium crystal has Raman and infrared active simultaneously, thereby can produce and be excited exciton scattering, produce near the Stokes light of 1080nm, the position generation Terahertz output of total reflection occurs at Stokes simultaneously.Arsenic acid titanyl potassium crystal 5, as nonlinear dielectric, can effectively produce Stokes and Terahertz conversion, changes the incident angle of incident light, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal by anglec of rotation rotating platform ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.In the time that pump energy is 100mJ, the maximum Terahertz output of acquisition is about 627nJ.
Embodiment 2,
As shown in Figure 4.
Based on a Terahertz parameter source for arsenic acid titanyl potassium crystal, comprise laser pumping system, Terahertz parametric device and cooling system; Described Terahertz parametric device comprises arsenic acid titanyl potassium crystal, described laser pumping system send pumping laser along Terahertz parametric device irradiate, described arsenic acid titanyl potassium crystal be excited exciton scattering process form Terahertz parameter source.
The THz wave reference frequency output in described Terahertz parameter source is 3.5-6.5THz.
Described Terahertz parametric device also comprises the Effect of Back-Cavity Mirror of Terahertz parametric device, the outgoing mirror of Terahertz parametric device, and the laser that described laser pumping system is sent penetrates successively along the outgoing mirror of Effect of Back-Cavity Mirror, arsenic acid titanyl potassium crystal and the Terahertz parametric device of Terahertz parametric device.Described arsenic acid titanyl potassium crystal is nonlinear crystal arsenic acid titanyl potassium.
Cut direction θ=90 ° of the crystal of described nonlinear crystal arsenic acid titanyl potassium, the span of φ is-10 ° to+10 °, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, the length of nonlinear crystal is l, and the width of nonlinear crystal is d; Thickness is h, crystal length l, and width d, thickness h can be selected with the area of pumping laser hot spot according to the actual requirements.
Described Terahertz parametric device also comprises THz wave coupling unit, and described THz wave coupling unit is silicon materials prisms, described silicon materials prism and nonlinear crystal seamless contact of xz face.The quantity of prism and size can determine according to the size of nonlinear crystal.
The both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium, yz face is all coated with anti-reflection film; Do polishing at THz wave exit facet (xz face).The wave-length coverage of described anti-reflection film can decide according to the wavelength of the pumping source of selecting.
The Effect of Back-Cavity Mirror of described Terahertz parametric device is coated with the high-reflecting film at Stokes wave band.The plated film of the outgoing mirror of described Terahertz parametric device has certain transmitance at Stokes wave band.
Below in conjunction with accompanying drawing 4, the present embodiment is described in detail:
As shown in Figure 4, a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal comprises the ns level pulse laser of the 1-100Hz of the low repetition of the 1(flash lamp pumping of laser pumped by pulsed laser source or LD pumping), beam expander or contracting bundle device 2, it is parallel with the z axle of nonlinear crystal arsenic acid titanyl potassium 5 that half-wave plate 3 is adjusted the polarization state of pumping laser, Effect of Back-Cavity Mirror 4 and the outgoing mirror 6 of Terahertz parametric device forms the resonant cavity of Terahertz parametric device, and be jointly fixed on angle rotating platform 7 with nonlinear crystal arsenic acid titanyl potassium 5 and Terahertz silicon prism-coupled parts 8, form Terahertz parametric device, nonlinear crystal arsenic acid titanyl potassium 5 contacts with the zox face gapless of Terahertz silicon prism-coupled parts 8, the pumping source system in impulse optical pumping source 1, beam expander or contracting bundle device 2 and the common composition of half-wave plate 3 Terahertz parameter source.A kind of method of work of the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows: the laser that send in laser pumped by pulsed laser source 1 is adjusted laser facula size by beam expander or contracting bundle device 2, then after adjusting polarization state by half-wave plate 8, enter Terahertz parametric device, because the A1 diaphragm 233.8cm-1 of arsenic acid titanyl potassium crystal has Raman and infrared active simultaneously, thereby can produce and be excited exciton scattering, produce Stokes light, produce terahertz emission ripple simultaneously, and export by silicon prism-coupled parts 8.Arsenic acid titanyl potassium crystal 5, as nonlinear dielectric, can effectively produce Stokes and Terahertz conversion, changes the incident angle of incident light, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal by anglec of rotation rotating platform ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.
The Nd:YAG adjusting Q pulse laser that described laser pumped by pulsed laser source 1 is flash lamp pumping or LD pumping, wavelength is 1064.2nm, and repetition rate is the adjustable ns level pulse laser of 1-100Hz, and maximum pump energy is 1J, and pulse duration is 8ns.
Described nonlinear crystal arsenic acid titanyl potassium, cut direction θ=90 ° of described nonlinear crystal, φ=0 °, described θ is the angle of pumping laser and nonlinear crystal z axle, and φ is the angle of nonlinear crystal x axle and nonlinear crystal side, and nonlinear crystal is l=30mm along x shaft length, be d=5mm along the length of y axle, be 5mm along the thickness of z axle, the size cut direction of described nonlinear crystal is not limited to this, and the size of crystal can be come to determine as required.
The both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium are all coated with the anti-reflection film of 1000nm-1100nm wavelength, side polishing.
The terahertz emission wave frequency of described tera-hertz parametric oscillator output is tunable, is 1.8-6.9 °, to obtain tuning range as 3.5-6.5THz by adjusting pump light and the shooting angle scope of Stokes laser outside nonlinear crystal.Described Stokes laser is to be excited the light beam close with pump light frequency that produce in exciton scattering process.
Described Effect of Back-Cavity Mirror 4 is coated with the anti-reflection film of pump light wave band and the high-reflecting film of 1000nm-1100nm wave band; Outgoing mirror 6 is coated with transmittance at 1000-1100nm wave band.High-reflecting film described herein, its reflectivity is greater than 95%, and transmittance scope described herein is 0.01%~99.99%.
Described THz wave coupling unit 8 is coupled modes of Terahertz silicon prism array.
Described cooling system is circulating water---crystal on side face is all used with the metal derby of pipeline and is encased, and continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal.
Workflow: it is 2.5mm that the 1064.2nm laser that Nd:YAG adjusting Q pulse laser pumping source 1 sends is adjusted laser spot diameter by beam expander or contracting bundle device 2, then adjust by half-wave plate 8 the z axle that laser polarization state is parallel to arsenic acid titanyl potassium crystal, enter in Terahertz parametric device, because the A1 diaphragm 233.8cm-1 of arsenic acid titanyl potassium crystal has Raman and infrared active simultaneously, thereby can produce and be excited exciton scattering, produce near the Stokes light of 1080nm, produce terahertz emission ripple simultaneously, and obtain output by Terahertz silicon prism array 8.Arsenic acid titanyl potassium crystal 5, as nonlinear dielectric, can effectively produce Stokes and Terahertz conversion, changes the incident angle of incident light, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal by anglec of rotation rotating platform ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.
Embodiment 3,
As shown in Figure 6, a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal as described in Example 1, wherein Terahertz parametric device is by the Effect of Back-Cavity Mirror 4 of Terahertz parametric device, the outgoing mirror 6 of Terahertz parametric device, angle rotating platform 7, Terahertz coupling unit 8 silicon prism arrays and nonlinear crystal arsenic acid titanyl potassium 5 form, nonlinear crystal arsenic acid titanyl potassium 5 contacts with the zox face gapless of Terahertz silicon prism-coupled parts 8, the Effect of Back-Cavity Mirror 4 of Terahertz parametric device, nonlinear crystal arsenic acid titanyl potassium 5, the outgoing mirror 6 of Terahertz parametric device is fixed on angle rotating platform 7 together with Terahertz silicon prism-coupled parts 8, pumped laser system resonant cavity Effect of Back-Cavity Mirror 12, pumped laser system resonant cavity outgoing mirror 17 form pumping laser resonant cavity, placement in pumping laser resonant cavity is followed successively by gain medium 14Nd:YAG laser crystal, acousto-optic Q modulation switch 15, the polarizer 16, half-wave plate 3 and Terahertz parametric device, jointly forms the Terahertz parameter source based on arsenic acid titanyl potassium crystal.The pumped laser system in Terahertz parameter source comprises laser diode LD 9, optical fiber 10, coupled lens group 11, the gain medium 14 of placing successively in the pumping laser resonant cavity that pumped laser system resonant cavity Effect of Back-Cavity Mirror 12 and pumped laser system resonant cavity outgoing mirror 17 form and pumping laser resonant cavity forms jointly for neodymium-doped yttrium-aluminum garnet (Nd:YAG) laser crystal, Q-switch 15, the polarizer 16, half-wave plate 3.A kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal is made up of the Terahertz parametric device of placing in above-mentioned pumped laser system and pumping laser resonant cavity.The working method in the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows: the pump light being produced by LD end pumping system is coupled into gain medium 14, the fundamental frequency light producing enters into Terahertz parametric device, because the A1 oscillation mode of arsenic acid titanyl potassium crystal wherein has infrared and Raman effect simultaneously, thereby can produce and be excited exciton scattering, produce Stokes light and terahertz emission ripple, THz wave obtains output by Terahertz silicon prism-coupled parts 8.Above-mentioned Q-switch 15, gain medium 14 and nonlinear crystal arsenic acid titanyl potassium 5 all carry out temperature control by cooling constant temperature system 13, and keeping temperature is 20 ℃.
Described laser diode LD 9 end face pumping systems are to be 400 microns of near LD end pumping source (peak power 75W) 808nm and corresponding optical fiber 14(core diameters by wavelength, numerical aperture 0.22) and coupled lens group 15(1:1 imaging, operating distance 50mm) composition.
Described laser crystal Nd:YAG crystal 14 is of a size of φ 4mm × 5mm, and its doping content is the anti-reflection film (transmitance is greater than 99.8%) that two end faces of 1-at.% are all coated with 808nm and 1000nm-1100nm wavelength.
Described Q-modulating device 15 is made up of radio frequency input unit and acousto-optic adjusting Q crystal, and the length of adjusting Q crystal is 38mm, and both ends of the surface are all coated with the anti-reflection film (transmitance is greater than 99.8%) to 1000nm-1100nm wavelength; Modulating frequency is that 1-60kHz is adjustable, changes the density of adjusting Q crystal by input radio frequency ripple, sexually revises the object of laserresonator threshold value performance period, plays Q-switch effect.
Described arsenic acid titanyl potassium crystal 5 is of a size of 30 (x) × 5 (y) × 5 (z) mm 3, both ends of the surface are all coated with the anti-reflection film (transmitance is greater than 99.8%) to 1000nm-1100nm wave band, zox plane polishing processing
Described resonant cavity mirror: the Effect of Back-Cavity Mirror 4 of Terahertz parametric device, the outgoing mirror 6 of Terahertz parametric device, pumped laser system resonant cavity Effect of Back-Cavity Mirror 12, pumped laser system resonant cavity outgoing mirror 17 are all flat mirrors, is coated with the high-reflecting film (reflectivity is greater than 99.8%) of 1000nm-1100nm wavelength.
The pump light that workflow: LD sends 808nm enters neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 14 through optical fiber 10 and coupled lens group 11, and in the time that acousto-optic Q modulation switch 15 cuts out, pump light transfers reversion particle to and stores; In the time that Q switching 15 is opened, a large amount of reversion particles of saving bit by bit transfer 1064.2nm fundamental frequency light to by stimulated radiation moment; The fundamental frequency light with high peak power is during through arsenic acid titanyl potassium crystal in Terahertz parametric device, due to effect generation Stokes light and the terahertz emission ripple of being excited exciton scattering, THz wave obtains output by Terahertz silicon prism-coupled parts 8, change the incident angle of incident light by anglec of rotation rotating platform, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.
Embodiment 4,
As shown in Figure 6.Wherein Terahertz parametric device is made up of the Effect of Back-Cavity Mirror 4 of Terahertz parametric device, outgoing mirror 6, nonlinear crystal arsenic acid titanyl potassium 5, angle rotating platform 7 and the cooling constant temperature system 13 of Terahertz parametric device, and the outgoing mirror 6 of the Effect of Back-Cavity Mirror 4 of Terahertz parametric device, nonlinear crystal arsenic acid titanyl potassium 5, Terahertz parametric device is fixed on angle rotating platform 7 together with cooling constant temperature system 13; Pumped laser system resonant cavity Effect of Back-Cavity Mirror 12 and pumped laser system resonant cavity outgoing mirror 17 form pumping laser resonant cavity, placement in pumping laser resonant cavity is followed successively by acousto-optic Q modulation switch 15, the polarizer 16, laser diode LD side pumping module 18, gain medium 14Nd:YAG laser crystal, half-wave plate 3 and above-mentioned Terahertz parametric device, jointly forms the Terahertz parameter source based on arsenic acid titanyl potassium crystal.The pumped laser system in Terahertz parameter source comprises that chamber mirror 12,17, acousto-optic Q modulation switch 15, the polarizer 16, laser diode LD side pumping module 18, gain medium 14Nd:YAG laser crystal and half-wave plate 3 form jointly; A kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal is made up of the Terahertz parametric device of placing in above-mentioned pumped laser system and pumping laser resonant cavity.A kind of method of work of the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows: the 808nm pump light being produced by LD profile pump system is coupled into gain medium 14, the fundamental frequency light producing enters into Terahertz parametric device, because the A1 oscillation mode of arsenic acid titanyl potassium crystal wherein has infrared and Raman effect simultaneously, thereby can produce and be excited exciton scattering, produce Stokes light, the position generation Terahertz output of total reflection occurs at Stokes simultaneously.Arsenic acid titanyl potassium crystal 5, as nonlinear dielectric, can effectively produce Stokes and Terahertz conversion, changes the incident angle of incident light, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal by anglec of rotation rotating platform ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.Above-mentioned Q-switch 15, arsenic acid titanyl potassium crystal 5 all carry out temperature control by cooling constant temperature system 13, and keeping temperature is 20 ℃.
Described laser diode LD side pumping module 18 is that near LD side-pump laser head (peak power 180W), driving power and water cooling box 808nm forms by wavelength.
Described neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 5 is of a size of Φ 3mm × 68mm, and its doping content is the anti-reflection film (transmitance is greater than 99.8%) that two end faces of 1-at.% are all coated with 1000nm-1100nm wave band.
Described Q-modulating device 15 is made up of radio frequency input unit and acousto-optic adjusting Q crystal, and the length of adjusting Q crystal is 46mm, and both ends of the surface are all coated with the anti-reflection film (transmitance is greater than 99.8%) to 1000nm-1100nm wave band; Modulating frequency is that 1-50kHz is adjustable, changes the density of adjusting Q crystal by input radio frequency ripple, sexually revises the object of laserresonator threshold value performance period, plays Q-switch effect.
Described arsenic acid titanyl potassium crystal 5 is identical with the nonlinear crystal arsenic acid titanyl potassium 5 in embodiment 1.
The Effect of Back-Cavity Mirror 4 of described Terahertz parametric device, the outgoing mirror 6 of Terahertz parametric device, pumped laser system resonant cavity Effect of Back-Cavity Mirror 12, pumped laser system resonant cavity outgoing mirror 17 are all flat mirrors, are coated with the high-reflecting film (reflectivity is greater than 99.8%) of 1000nm-1100nm wavelength.
Workflow: the pump light that LD side pumping source sends 808nm incides neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 14, when acousto-optic Q modulation switch 15 is in the time cutting out, pump light transfers reversion particle to and stores; In the time that Q switching 15 is opened, a large amount of reversion particles of saving bit by bit transfer 1064.2nm fundamental frequency light to by stimulated radiation moment; The fundamental frequency light with high peak power is during through arsenic acid titanyl potassium crystal in Terahertz parametric device, due to the effect generation Stokes light of being excited exciton scattering, there is the position generation Terahertz output of total reflection at Stokes simultaneously, change the incident angle of incident light by anglec of rotation rotating platform, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.
Embodiment 5,
A Terahertz parameter source based on arsenic acid titanyl potassium crystal as described in Example 3, its difference is, just removes Q-switch 15, obtains continuous terahertz emission ripple running.
The pump light that workflow: LD sends 808nm enters neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 14 through optical fiber 10 and coupled lens group 11, transfers 1064.2nm fundamental frequency light to by stimulated radiation; When fundamental frequency light passes through the arsenic acid titanyl potassium crystal in Terahertz parametric device, produce Stokes light and the terahertz emission ripple of continuous operation owing to being excited the effect of exciton scattering, THz wave obtains output by Terahertz silicon prism-coupled parts 8, change the incident angle of incident light by anglec of rotation rotating platform, i.e. pump light and the Stokes light angle θ outside arsenic acid titanyl potassium crystal ext, can obtain the tunable Terahertz output within the scope of 3.5-6.5THz.
Embodiment 6,
A Terahertz parameter source based on arsenic acid titanyl potassium crystal as described in Example 4, its difference is, nonlinear crystal arsenic acid titanyl potassium 5 is with the nonlinear crystal arsenic acid titanyl potassium 5 in embodiment 2.
Embodiment 7,
As shown in Figure 7, a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal as described in Example 2, comprise the ns level pulse laser of the 1-100Hz of the low repetition of the 1(flash lamp pumping of laser pumped by pulsed laser source or LD pumping), beam expander or contracting bundle device 2, it is parallel with the z axle of nonlinear crystal arsenic acid titanyl potassium 5 that half-wave plate 3 is adjusted the polarization state of pumping laser, nonlinear crystal arsenic acid titanyl potassium 5 and Terahertz silicon prism-coupled parts 8 form Terahertz parametric device, the nonlinear crystal arsenic acid titanyl potassium 5 of Terahertz parametric device contacts with the zox face gapless of Terahertz silicon prism-coupled parts 8, laser pumped by pulsed laser source 1, the pumping source system in beam expander or contracting bundle device 2 and the common composition of half-wave plate 3 Terahertz parameter source.A kind of method of work of the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows: the laser that send in laser pumped by pulsed laser source 1 is adjusted laser facula size by beam expander or contracting bundle device 2, then after adjusting polarization state by half-wave plate 3, enter Terahertz parametric device, because the A1 diaphragm 233.8cm-1 of arsenic acid titanyl potassium crystal has Raman and infrared active simultaneously, thereby can produce and be excited exciton scattering, produce Stokes light, produce terahertz emission ripple simultaneously, and export by Terahertz silicon prism-coupled parts 8.Arsenic acid titanyl potassium crystal 5, as nonlinear dielectric, can effectively produce Stokes and Terahertz conversion, can obtain the Terahertz output within the scope of 3.5-6.5THz.
The Nd:YAG adjusting Q pulse laser that described laser pumped by pulsed laser source 1 is flash lamp pumping or LD pumping, wavelength is 1064.2nm, and repetition rate is the adjustable ns level pulse laser of 1-100Hz, and maximum pump energy is 1J, and pulse duration is 8ns.
Described nonlinear crystal arsenic acid titanyl potassium, cut direction θ=90 ° of described nonlinear crystal, φ=0 °, described θ is the angle of pumping laser and nonlinear crystal z axle, and φ is the angle of nonlinear crystal x axle and nonlinear crystal side, and nonlinear crystal is l=30mm along x shaft length, be d=5mm along the length of y axle, be 5mm along the thickness of z axle, the size cut direction of described nonlinear crystal is not limited to this, and the size of crystal can be come to determine as required.
The both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium are all coated with the anti-reflection film of 1000nm-1100nm wavelength, side polishing.
Described THz wave coupling unit 8 is coupled modes of Terahertz silicon prism array.
Described cooling system is circulating water---crystal on side face is all used with the metal derby of pipeline and is encased, and continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal.
Workflow: it is 2.5mm that the 1064.2nm laser that Nd:YAG adjusting Q pulse laser pumping source 1 sends is adjusted laser spot diameter by beam expander or contracting bundle device 2, then adjust by half-wave plate 8 the z axle that laser polarization state is parallel to arsenic acid titanyl potassium crystal, enter in Terahertz parametric device, because the A1 diaphragm 233.8cm-1 of arsenic acid titanyl potassium crystal has Raman and infrared active simultaneously, thereby can produce and be excited exciton scattering, produce near the Stokes light of 1080nm, produce the terahertz emission ripple within the scope of 3.5-6.5THz simultaneously, and obtain output by Terahertz silicon prism-coupled parts 8.
Embodiment 8,
A Terahertz parameter source based on arsenic acid titanyl potassium crystal as described in Example 7, its difference is, nonlinear crystal arsenic acid titanyl potassium 5 is with the nonlinear crystal arsenic acid titanyl potassium 5 in embodiment 1.

Claims (10)

1. the Terahertz parameter source based on arsenic acid titanyl potassium crystal, is characterized in that, this parameter source comprises laser pumping system, Terahertz parametric device and cooling system; Described Terahertz parametric device comprises arsenic acid titanyl potassium crystal, described laser pumping system send pumping laser along Terahertz parametric device irradiate, described arsenic acid titanyl potassium crystal be excited exciton scattering process form Terahertz parameter source.
2. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 1, is characterized in that, the THz wave reference frequency output in described Terahertz parameter source is 3.5-6.5THz.
3. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 1, it is characterized in that, described Terahertz parametric device also comprises the Effect of Back-Cavity Mirror of Terahertz parametric device, the outgoing mirror of Terahertz parametric device, and the laser that described laser pumping system is sent penetrates successively along the outgoing mirror of Effect of Back-Cavity Mirror, arsenic acid titanyl potassium crystal and the Terahertz parametric device of Terahertz parametric device.
4. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 1, is characterized in that, described arsenic acid titanyl potassium crystal is nonlinear crystal arsenic acid titanyl potassium.
5. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 4, it is characterized in that, cut direction θ=90 ° of the crystal of described nonlinear crystal arsenic acid titanyl potassium, φ is arbitrarily angled, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, and the length of nonlinear crystal is l, and the width of nonlinear crystal is d.
6. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 4, is characterized in that described x, y, z represents respectively the x axle of arsenic acid titanyl potassium crystal, y axle and z direction of principal axis, the cutting angle φ of the crystal x axle of Terahertz exit facet and nonlinear crystal arsenic acid titanyl potassium 1scope be-45 ° to-15 °.
7. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 4, is characterized in that, the both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium are all coated with anti-reflection film; The Effect of Back-Cavity Mirror of described Terahertz parametric device is coated with the high-reflecting film at Stokes wave band.
8. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 4, it is characterized in that, cut direction θ=90 ° of the crystal of described nonlinear crystal arsenic acid titanyl potassium, the span of φ is-10 ° to+10 °, described θ is the angle of pumping laser and nonlinear crystal z axle, φ is the angle of nonlinear crystal x axle and nonlinear crystal side, and the length of nonlinear crystal is l, and the width of nonlinear crystal is d; Described Terahertz parametric device also comprises THz wave coupling unit, and described THz wave coupling unit is silicon materials prisms, described silicon materials prism and nonlinear crystal seamless contact of xz face.
9. a kind of Terahertz parameter source based on arsenic acid titanyl potassium crystal according to claim 8, is characterized in that, the both ends of the surface of described nonlinear crystal arsenic acid titanyl potassium, and yz face is all coated with anti-reflection film; Do polishing at THz wave exit facet (xz face); The Effect of Back-Cavity Mirror of described Terahertz parametric device is coated with the high-reflecting film at Stokes wave band.
One kind a kind of method of work of the Terahertz parameter source based on arsenic acid titanyl potassium crystal is as follows as claimed in claim 1:
The pump light that laser pumping origin system sends enters into the arsenic acid titanyl potassium nonlinear crystal of described Terahertz parametric device, with in arsenic acid titanyl potassium crystal, there is Raman and infrared-active crystal diaphragm simultaneously and interact, exciton scattering is excited in generation, in Terahertz parametric device, form Stokes laser, produce terahertz emission ripple simultaneously, and utilize silicon prism-coupled array coupled modes or the mode of launching by vertical surface obtains terahertz emission output.
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CN106099625A (en) * 2016-08-26 2016-11-09 山东大学 A kind of Terahertz based on arsenic acid titanyl rubidium crystal produces system and method for work thereof
CN106229796A (en) * 2016-10-10 2016-12-14 华北水利水电大学 A kind of terahertz radiation source of optically-based mixing effect
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CN112086848A (en) * 2020-09-17 2020-12-15 河南顺博新能源科技有限公司 High-power intracavity pumping terahertz wave parametric oscillator with uniform divergence angle and circular light spot output
CN112086848B (en) * 2020-09-17 2023-08-11 河南顺博新能源科技有限公司 High-power intracavity pump terahertz wave parametric oscillator for outputting uniform divergence angle round light spots

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