CN109687266A - A kind of 2.79 microns of erbium lasers of high-peak power - Google Patents
A kind of 2.79 microns of erbium lasers of high-peak power Download PDFInfo
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- CN109687266A CN109687266A CN201811551993.6A CN201811551993A CN109687266A CN 109687266 A CN109687266 A CN 109687266A CN 201811551993 A CN201811551993 A CN 201811551993A CN 109687266 A CN109687266 A CN 109687266A
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- H01S3/1106—Mode locking
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- H01S3/1115—Passive mode locking using intracavity saturable absorbers
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- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
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- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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Abstract
The present invention relates to a kind of 2.79 microns of erbium lasers of high-peak power, belong to all solid state laser field, including laser pumping source A, focusing coupled system A, laser crystal, tune Q module, resonator mirror A resonant cavity mirror B；It is incident on laser crystal after the light line focus coupled system A that laser pumping source A is issued, resonator mirror A, laser crystal adjust Q module resonant cavity mirror B to constitute 2.79 mu m waveband erbium laser resonant cavities, and 2.79 mu m waveband mid-infrared lasers of generation are exported from resonator mirror B end mirror；Laser crystal is Er3+、Pr3+The laser crystal being co-doped with.The present invention uses laser pumped by pulsed laser source face-pumping structure, effectively overcome the low problem of flash lamp pumping laser repetition rate, the fuel factor of laser resonator is alleviated simultaneously, and good cavity mode matching is realized by the rational design of resonant cavity, obtain 2.79 μm of erbium lasers output of high efficiency, high-peak power, high light beam quality.
Description
Technical field
The present invention relates to a kind of 2.79 microns of (μm) erbium lasers of high-peak power, belong to all solid state laser technology neck
Domain.
Background technique
2.79 mu m waveband lasers can be used for infrared illumination, laser radar, photoelectronic warfare, free-space communication, chemistry and life
The fields such as physical prospecting survey, environmental pollution monitoring.2.79 mu m waveband mid-infrared ultra-short pulse lasers are combed in middle infrared frequency, Ah Miao is ultrashort
Pulse, artificial dynamic band gap and the detection of ground near space etc. have irreplaceable role.In addition it can be pumped
Infrared optical parametric oscillator obtains the high power infrared laser of 5.0-8.0 μm of more long wavelength.Importantly, 2.79 mu m wavebands
Laser is Chong Die with the strong absworption peak position of water, thus water is especially high to its absorptivity, makes it in the thin layer of more water soft tissues
It is absorbed, therefore can accurately be cut under the premise of not generating any thermal damage to surrounding soft tissue, be fine surgery
It performs the operation ideal service band, is widely used in biological and medical field.As noted previously, as 2.79 μm of mid-infrared laser tools
There are important application background and very big demand, it has become the emphasis of recent domestic all-solid state laser area research.
Based on erbium (Er3+) ion doping crystalline material be LD directly pump generate 2.79 μm of mid-infrared lasers output master
Want gain media.But Er3+There are the fluorescence lifetimes of " bottleneck "-upper laser level for 2.79 mu m waveband laser transition of ion
Much smaller than the fluorescence lifetime of laser lower level, in stimulated emission process, the particle that transition is got off is accumulated on lower energy level, unfavorable
Enough population inversion are kept in During laser emission.Therefore, 2.79 mu m waveband mid-infrared laser of Yao Shixian high efficiency is defeated
Out, the particle (reducing its fluorescence lifetime) for effectively discharging lower energy level is just had to.
It has been investigated that by mixing certain energy levels and Er3+The close ion of energy level under ion, passes through interionic resonance energy
Amount transfer can accelerate the speed for evacuating laser lower level particle, effectively reduce the fluorescence lifetime of lower energy level.
In a particular application, 2.79 μm of lasers of burst pulse, high-peak power are generally required, and Q-regulating technique is to obtain
The technical way of the light source.Common Q-regulating technique includes electric-optically Q-switched, acousto-optic Q modulation and passive Q-adjusted (saturable absorber tune
Q) etc..Previous burst pulse, high-peak power 2.79 μm of lasers all flash lamp is used to be pumped, using profile pump
Mode results in following problems in this way: one, flash of light etc. in the spectral lines of emission in addition to by the very small part others of absorption of crystal all
Heat can be generated, and then generates thermal lens and Depolarization, influences final beam quality and output energy；Two, side pumps
Pu mode pattern match is poor, is difficult to obtain the laser output of high light beam quality；Three, the repetition frequency of flash lamp pumping laser pulse
Rate is lower, generally less than 20Hz；Four, flash lamp pumping structure, lamp and laser crystal are required using the water flowing of high-power water-cooling machine
It is cooling, cause whole system very huge, and cost is also very high.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of compact-sized (miniaturization), high efficiency, high light beam quality
2.79 microns of erbium lasers of high-peak power.
The invention adopts the following technical scheme:
A kind of 2.79 microns of erbium lasers of high-peak power, including laser pumping source A, focusing coupled system A, laser are brilliant
Body adjusts Q module, resonator mirror A resonant cavity mirror B；
It is incident on laser crystal after the light line focus coupled system A that laser pumping source A is issued, resonator mirror A, laser
Crystal adjusts Q module resonant cavity mirror B to constitute 2.79 mu m waveband erbium laser resonant cavities, 2.79 mu m waveband mid-infrared lasers of generation
It is exported from resonator mirror B end mirror；
The laser crystal is erbium (Er3+), praseodymium (Pr3+) laser crystal that is co-doped with, crystalline host material can be pomegranate
The crystal of stone structure such as YAG, GGG, YSGG, GAGG, GYSGG etc. are also possible to crystal of fluoride such as YLF, LLF, BYF, CaF2
Deng；
Laser crystal is erbium (Er3+), praseodymium (Pr3+) laser crystal that is co-doped with, ion doping concentration there are optimal proportion,
Optimal proportion is 1:1~5:1, the laser lower level service life can be made to greatly reduce within this range, while to upper laser level shadow
Very little is rung, so that the upper laser level service life be made to be greater than laser lower level, population inversion is advantageously implemented and obtains laser output；
Preferably, the invention also includes resonator mirror C, resonator mirror A, laser crystal adjust Q module, resonator mirror B harmonious
The hysteroscope C that shakes constitutes 2.79 mu m waveband erbium laser resonant cavities.
Preferably, the invention also includes resonator mirror D, resonator mirror A, laser crystal adjust Q module, are resonator mirror B, humorous
The hysteroscope C resonant cavity mirror D that shakes constitutes 2.79 mu m waveband erbium laser resonant cavities.
Preferably, the invention also includes focus coupled system B, a beam splitter and three reflecting mirrors, reflecting mirror can be
45 ° of reflecting mirrors of pump light, the laser pumping source A are both-end pumping structure, and both-end pumping structure issues laser pumping source A
For light through being divided into the equal two parts of power after beam splitter, a portion is incident on laser crystal through over-focusing coupled system A
On, another part is incident on laser crystal after beam splitter is reflected by reflecting mirror using focusing coupled system B.
It preferably, further include focusing coupled system B and laser pumping source B, laser pumping source A and laser pumping source B to issue
Light respectively line focus coupled system A and focus coupled system B be incident on laser crystal.
It is further preferred that the host material of the laser crystal is the crystal or crystal of fluoride of garnet structure.
It is further preferred that the laser pumping source A is the semiconductor laser (LD) of pulsed operation, linear polarization can be
, it is also possible to random polarization；It, then will be according to the requirement (polarization absorption characteristic) of laser crystal if it is linear polarization pump light
Determine polarization direction.
The tune Q module, can be electric-optically Q-switched module, is also possible to acousto-optic Q modulation switch, is also possible to passive Q-adjusted mould
Block is also opened to be the combination of both of the above；
Above-mentioned electric-optically Q-switched module, including quarter-wave plate and electro-optical Q-switch, wherein electro-optical Q-switch can use phosphorus
One of acid dihydride potassium (KDP), rubidium oxygen titanium phosphate (RTP), lithium niobate (LN), barium silicate (LGS)；Working method can adopt
It can also be used with adding pressure type and move back pressure type；
Above-mentioned acousto-optic Q modulation module, acousto-optic Q-switching can use vitreous silica, can also use tellurium dioxide, can also be with
Using crystal of barium tellurium aluminate；
Above-mentioned passive Q-adjusted module, saturable absorber can use different two-dimensional materials, including graphene, black phosphorus,
One of transient metal sulfide, topological insulator or hetero-junctions of different two-dimensional materials, can also use semiconductor can
Saturated absorption mirror (SESAM) is also possible to the laser crystal for having saturated absorption in the wave band, such as Fe:ZnSe.
Resonant cavity of the invention can be simple two mirrors chamber, be also possible to three resonator mirror refrative cavities, four resonator mirrors folding
Folded chamber；Single-ended pump mode can be used, both-end pumping mode can also be used；
In the present invention, pump light works as pumping through being incident in laser crystal after over-focusing coupled system resonant cavity mirror
Light energy generates laser when being more than the threshold value of 2.79 μm of oscillations, the laser of generation is exported from resonator mirror.
The invention has the benefit that
1) end pumping mode is used, the Mode Coupling of pump light and oscillation light can be effectively realized, ensure that laser
Power, efficiency, beam quality and long-time stability with higher；
2) it is combined using pulse LD pumping and Q-regulating technique, Gao Zhongying (100Hz magnitude) burst pulse peak value can be obtained
Power laser output；
3) laser crystal for using the codope of erbium praseodymium, can effectively reduce the service life of laser lower level, greatly improve pumping effect
Rate；
4) entire laser structure is not required to water cooling, can be cooling using semiconductor cooler (TEC), so that whole system body
Product substantially reduces.
The lower problem of flash lamp pumping laser repetition rate before the present invention effectively overcomes, while can alleviate sharp
The fuel factor of optical cavity, and good cavity mode matching is realized by the rational design of resonant cavity, to obtain high efficiency, peak
It is worth 2.79 μm of erbium lasers output of power, high light beam quality.By reasonably configuring optical element, the pumping configuration of optimization is set
Meter, realize miniaturization, high efficiency, high-peak power, high light beam quality 2.79 mu m waveband mid-infrared laser devices.
Detailed description of the invention
Fig. 1 is a schematic structural view of Embodiment 1 of the present invention；
Fig. 2 is a schematic structural view of Embodiment 2 of the present invention；
Fig. 3 is a schematic structural view of Embodiment 3 of the present invention；
Fig. 4 is a schematic structural view of Embodiment 4 of the present invention；
Fig. 5 is a schematic structural view of Embodiment 5 of the present invention；
Wherein: 1, laser pumping source A, 2, focusing coupled system A, 3, resonator mirror A, 4, laser crystal, 5, tune Q module,
6, resonator mirror B, 7, resonator mirror C, 8, resonator mirror D, 9, focusing coupled system B, 10, beam splitter, 11,12,13 be reflection
Mirror, 14, laser pumping source B.
Specific embodiment:
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail, but is not limited only to this, what the present invention did not elaborated, presses this field routine techniques.
Embodiment 1:
A kind of 2.79 microns of erbium lasers of high-peak power, as shown in Figure 1, including laser pumping source A1, focusing coupled systemes
System A2, laser crystal 4, Q module 5, resonator mirror A3 resonant cavity mirror B6 are adjusted；
It is incident on laser crystal 4 after the light line focus coupled system A2 that laser pumping source A1 is issued, resonator mirror A3,
Laser crystal 4 adjusts 5 resonant cavity mirror B6 of Q module to constitute 2.79 mu m waveband erbium laser resonant cavities, red in 2.79 mu m wavebands of generation
Outer laser is exported from resonator mirror B6 end mirror；
Laser crystal 4 is Er3+、Pr3+The laser crystal being co-doped with, the ratio of doping concentration are 1:3.
The present embodiment 1 carries out end pumping using laser pumped by pulsed laser source, makes pump light and oscillation hot spot implementation pattern
Match, high efficiency, the output of 2.79 mu m waveband mid-infrared laser of high light beam quality are obtained while alleviating laser crystal fuel factor, this
Inventive structure it is simple and compact, it can be achieved that laser miniaturization.
Embodiment 2:
A kind of 2.79 microns of erbium lasers of high-peak power, structure is as described in Example 1, the difference is that such as Fig. 2 institute
Show, further include resonator mirror C7, resonator mirror A1, laser crystal 4 adjust Q module 5, resonator mirror B6 resonant cavity mirror C7 to constitute
2.79 mu m waveband mid-infrared lasers of 2.79 mu m waveband erbium, three mirror laser resonator, generation are exported from resonator mirror B end mirror.
Embodiment 3:
A kind of 2.79 microns of erbium lasers of high-peak power, structure is as described in Example 2, the difference is that such as Fig. 3 institute
Show, further includes resonator mirror D8, resonator mirror A1, laser crystal 4, adjust Q module 5, resonator mirror B6, resonator mirror C7 and resonance
Hysteroscope D8 constitutes 2.79 mu m waveband erbium laser resonant cavities.
Embodiment 4:
A kind of 2.79 microns of erbium lasers of high-peak power, structure is as described in Example 2, the difference is that such as Fig. 4 institute
Show, including focus coupled system B9, a beam splitter 10 and three reflecting mirrors 11,12,13, laser pumping source A1 is both-end pumping
The light that laser pumping source A1 is issued is divided into the equal two parts of power later through beam splitter 10 by structure, both-end pumping structure,
Middle a part is incident on laser crystal 4 through over-focusing coupled system A2, another part through beam splitter 10 by reflecting mirror 11,12,
It is incident on laser crystal 4 after 13 reflections using focusing coupled system B9, constitutes both-end pumping structure, resonator mirror A3, swash
Luminescent crystal 4 adjusts Q module 5, resonator mirror B6 resonant cavity mirror C7 to constitute 2.79 mu m waveband erbium, three mirror laser resonator, generation
2.79 mu m waveband mid-infrared lasers are exported from resonator mirror B6 end mirror.
Can be to avoid the waste of unpolarized pump light energy using both-end pumping structure, while laser crystal can be alleviated
Fuel factor facilitates the 2.79 mu m waveband mid-infrared lasers output for obtaining high power, high light beam quality.
Embodiment 5:
A kind of 2.79 microns of erbium lasers of high-peak power, structure is as described in Example 2, the difference is that such as Fig. 5 institute
Show, including focuses the light difference that coupled system B9 and laser pumping source B14, laser pumping source A1 and laser pumping source B14 are issued
Line focus coupled system A2 and focusing coupled system B9 are incident on laser crystal 4；
Laser pumping source A1 is the semiconductor laser of pulsed operation；Adjusting Q module 5 is electric-optically Q-switched module.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of 2.79 microns of erbium lasers of high-peak power, which is characterized in that including laser pumping source A, focus coupled system
A, laser crystal, tune Q module, resonator mirror A resonant cavity mirror B；
It is incident on laser crystal after the light line focus coupled system A that laser pumping source A is issued, resonator mirror A, laser are brilliant
Body adjusts Q module resonant cavity mirror B to constitute 2.79 mu m waveband erbium laser resonant cavities, 2.79 mu m waveband mid-infrared lasers of generation from
The output of resonator mirror B end mirror；
The laser crystal is Er3+、Pr3+The laser crystal being co-doped with.
2. 2.79 microns of erbium lasers of high-peak power according to claim 1, which is characterized in that further include resonator mirror
C, resonator mirror A, laser crystal adjust Q module, resonator mirror B resonant cavity mirror C to constitute 2.79 mu m waveband erbium laser resonant cavities.
3. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that further include resonator mirror
D, resonator mirror A, laser crystal adjust Q module, resonator mirror B, resonator mirror C resonant cavity mirror D 2.79 mu m waveband erbiums of composition to swash
Optical cavity.
4. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that further include focusing coupling
System B, a beam splitter and three reflecting mirrors, the laser pumping source A are both-end pumping structure, and both-end pumping structure is by laser
Through being divided into the equal two parts of power after beam splitter, a portion enters the light that pumping source A is issued through over-focusing coupled system A
It is mapped on laser crystal, another part is incident on laser crystalline substance using focusing coupled system B after beam splitter is reflected by reflecting mirror
On body.
5. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that further include focusing coupling
The light difference line focus coupled system A and focusing that system B and laser pumping source B, laser pumping source A and laser pumping source B are issued
Coupled system B is incident on laser crystal.
6. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that the laser crystal
Host material is the crystal or crystal of fluoride of garnet structure.
7. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that Er3+、Pr3+It adulterates dense
The ratio of degree is 1:1~5:1.
8. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that the laser pumping source
A is the semiconductor laser of pulsed operation, is linear polarization or random polarization.
9. 2.79 microns of erbium lasers of high-peak power according to claim 2, which is characterized in that the tune Q module is
One of electric-optically Q-switched module, acousto-optic Q modulation switch, passive Q-adjusted module or any two kinds of combination；
Preferably, the electric-optically Q-switched module includes quarter-wave plate and electro-optical Q-switch, wherein electro-optical Q-switch be KDP, RTP,
One of LN, LGS；The working method of the light tune Q module is using adding pressure type or moves back pressure type.
10. 2.79 microns of erbium lasers of high-peak power according to claim 9, which is characterized in that the acousto-optic Q modulation is opened
It closes and uses vitreous silica, tellurium dioxide or crystal of barium tellurium aluminate；
Preferably, saturable absorber using graphene, black phosphorus, transient metal sulfide or is opened up in the passive Q-adjusted module
Flutter insulator.
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| CN201811551993.6A Pending CN109687266A (en) | 2018-12-19 | 2018-12-19 | A kind of 2.79 microns of erbium lasers of high-peak power |
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| CN111416271A (en) * | 2020-02-29 | 2020-07-14 | 济南大学 | Tunable frequency mode-locked laser based on two-dimensional material heterojunction and active modulation switch dual modulation |
| CN111628399A (en) * | 2020-05-06 | 2020-09-04 | 西北核技术研究院 | Passive pulse width compression method for electric excitation non-chained pulse HF laser and laser |
| CN111969398A (en) * | 2020-08-06 | 2020-11-20 | 南京信息工程大学 | Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber |
| CN113036587A (en) * | 2021-02-07 | 2021-06-25 | 中国科学院合肥物质科学研究院 | Amplified mid-infrared laser based on erbium-doped single crystal fiber seed light source |
| CN113644536A (en) * | 2021-07-08 | 2021-11-12 | 北京遥测技术研究所 | High-vibration-resistance kilohertz miniaturized laser |
| CN113991412A (en) * | 2021-09-15 | 2022-01-28 | 中国科学院福建物质结构研究所 | Intermediate infrared Q-switched laser based on YIG magneto-optical crystal |
| CN114792925A (en) * | 2022-06-21 | 2022-07-26 | 中国工程物理研究院应用电子学研究所 | Microminiature intermediate infrared 3 micron waveband solid laser |
| CN117154527A (en) * | 2023-08-31 | 2023-12-01 | 山西大学 | Dual-color associated light beam generation device and method based on dual-doped gain medium |
| CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
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| CN111416271A (en) * | 2020-02-29 | 2020-07-14 | 济南大学 | Tunable frequency mode-locked laser based on two-dimensional material heterojunction and active modulation switch dual modulation |
| CN111628399A (en) * | 2020-05-06 | 2020-09-04 | 西北核技术研究院 | Passive pulse width compression method for electric excitation non-chained pulse HF laser and laser |
| CN111969398A (en) * | 2020-08-06 | 2020-11-20 | 南京信息工程大学 | Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber |
| CN113036587A (en) * | 2021-02-07 | 2021-06-25 | 中国科学院合肥物质科学研究院 | Amplified mid-infrared laser based on erbium-doped single crystal fiber seed light source |
| CN113036587B (en) * | 2021-02-07 | 2022-07-01 | 中国科学院合肥物质科学研究院 | Amplified mid-infrared laser based on erbium-doped single crystal fiber seed light source |
| CN113644536A (en) * | 2021-07-08 | 2021-11-12 | 北京遥测技术研究所 | High-vibration-resistance kilohertz miniaturized laser |
| CN113644536B (en) * | 2021-07-08 | 2023-03-03 | 北京遥测技术研究所 | High-vibration-resistance kilohertz miniaturized laser |
| CN113991412A (en) * | 2021-09-15 | 2022-01-28 | 中国科学院福建物质结构研究所 | Intermediate infrared Q-switched laser based on YIG magneto-optical crystal |
| CN114792925A (en) * | 2022-06-21 | 2022-07-26 | 中国工程物理研究院应用电子学研究所 | Microminiature intermediate infrared 3 micron waveband solid laser |
| CN117154527A (en) * | 2023-08-31 | 2023-12-01 | 山西大学 | Dual-color associated light beam generation device and method based on dual-doped gain medium |
| CN117154527B (en) * | 2023-08-31 | 2024-04-12 | 山西大学 | Dual-color associated light beam generation device and method based on dual-doped gain medium |
| CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
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