CN107482425A - A kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79um laser pumping source - Google Patents
A kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79um laser pumping source Download PDFInfo
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- CN107482425A CN107482425A CN201710959025.8A CN201710959025A CN107482425A CN 107482425 A CN107482425 A CN 107482425A CN 201710959025 A CN201710959025 A CN 201710959025A CN 107482425 A CN107482425 A CN 107482425A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08072—Thermal lensing or thermally induced birefringence; Compensation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
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Abstract
The invention discloses a kind of Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, by including fiber coupling output semiconductor laser, the double etalon coupled cavity lasers of injection seeded, acousto-optic Q modulation device and etalon temperature control unit are formed.The present invention possesses Gao Zhongying（kHz）, single longitudinal mode, narrow spaces（ns）, high-energy（mJ）The features such as, it can be used as and obtain 5~8 μm of efficient pump light sources of mid-infrared laser parametric system of narrow linewidth.
Description
Technical field
The infrared single longitudinal mode laser field the present invention relates in, specifically a kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79
Um laser pumping source.
Background technology
5~8 μm of mid-infrared lasers of narrow linewidth have important in fields such as heterodyne sensing, atmospheric environment detection, macromolecule spectrum
Application value, and be typically easier to obtain at present in the technology of tunable narrow linewidth mid-infrared laser, optical parameter technology
Develop and be widely applied faster because efficiently, being obtained the advantages that simplicity, broad tuning.Generally, in 5~8 μm of parameter lasers
Generation during, it is necessary to which the LASER Light Source of short wavelength as pump light source, and uses more ripe near-infrared（1~2 μm）
LASER Light Source, because the problem of Excited state is serious is difficult to obtain efficient China and foreign countries' laser, therefore, uses as pumping source
Infrared erbium laser light source can solve that Excited state is serious to ask as the pumping source of optical parameter system in 2.79 μm of pulse
Topic, effectively improve the conversion efficiency of parameteric light.However, during using 5~8 μm of parameteric lights of optical parameter technical limit spacing, from
The spectral width exported by operating optical parameter system laser is very wide, generally up to more than ten nanometers even tens nanometers, it is difficult to meet
Practical application.The parameter light output of narrow linewidth is realized, the pumping source of single longitudinal mode narrow linewidth is an important and indispensable condition；Cause
This, narrow linewidth single longitudinal mode, 2.79 μm of mid-infrared laser pumping source of pulse are to obtaining infrared parameter in 5~8 μm of narrow linewidth
The development of light has and its important strategic importance.
In laser oscillation longitudinal mode control technology, numerous frequency-selecting elements（Grating, etalon）It has been widely used；Example
Such as, the etalon of transmission-type can be inserted directly into the resonator of laser, or directly from reflective gratings as sharp
The hysteroscope of optical cavity.But the method that transmission-type etalon is inserted using intracavitary directly controls the longitudinal mode number of laser because of processing
The reasons such as technique cause serious cavity loss, and so, can not only improve the oscillation threshold of laser can also reduce the effect of laser
Rate；And conventional body grating（VBG）Using wave band less than 2.7 μm, therefore, in 2.79 mum wavelengths acquisition narrow linewidth Dan Zong
The laser output of mould needs new technological means.
At present, the document of correlation is consulted, does not find Gao Zhongying, single longitudinal mode, narrow spaces 2.79 μm of laser pumping sources temporarily
Report.
The content of the invention
It is an object of the invention to provide a kind of Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, with solve
Prior art does not have the problem of 2.79 μm of Gao Zhongying, single longitudinal mode, narrow spaces laser pumping sources.
In order to achieve the above object, the technical solution adopted in the present invention is：
A kind of Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Including the double standards of injection seeded
Tool coupled cavity lasers, fiber coupling output semiconductor laser unit, acousto-optic Q modulation unit and etalon temperature control unit,
Wherein：
The double etalon coupled cavity lasers of injection seeded include Cr, Er, Pr:The laser crystal bar that GYSGG laser crystals are formed, institute
State laser crystal bar be placed on it is heat sink in, in front of laser crystal nose on laser crystal bar central axis extension line successively
Be provided with acousto-optic Q modulation crystal, output cavity piece, laser crystal bar rear end rear be located on laser crystal bar central axis extension line according to
It is secondary to be provided with 45 ° of light combination mirrors, etalon speculum, and 45 ° of light combination mirrors are centrally located on laser crystal bar central axis extension line,
The first etalon, second are sequentially provided with positioned at 45 ° of light combination mirror center lefts and along perpendicular to laser crystal bar central axial direction
Etalon, collimation focusing lens are provided with perpendicular to laser crystal bar central axial direction positioned at 45 ° of light combination mirror center rights and edge,
The collimation focusing lens one end towards 45 ° of light combination mirror centers, by the first etalon speculum, 45 ° of light combination mirrors, laser crystal bar,
Acousto-optic Q modulation crystal, output cavity piece form main oscillations chamber, by the second etalon speculum, the 3rd etalon transmission mirror, 45 ° of conjunction beams
Mirror, laser crystal bar, acousto-optic Q modulation crystal, output cavity piece form self-seeding chamber；
Etalon temperature conditioning unit includes heat sink and heat-insulation layer, ceramic heating flake, temperature sensor, intelligent temperature controller and constant pressure electricity
Source, wherein the second etalon is placed in heat sink and heat-insulation layer, ceramic heating flake is close to heat sink and heat-insulation layer side, temperature sensor
It is close to heat sink and heat-insulation layer opposite side, ceramic heating flake and temperature sensor are connected with intelligent temperature controller respectively, constant voltage source point
Ceramic heating flake and intelligent temperature controller are not supplied power to；
Fiber coupling output semiconductor laser unit include semiconductor LD modules, semiconductor laser power supply and power-supply controller of electric,
Couple optical fiber；In semiconductor laser power supply and power-supply controller of electric, power-supply controller of electric is connected with semiconductor laser power supply, by power supply control
Device processed is configured and controlled to the parameter of semiconductor laser power supply, and semiconductor laser power supply supplies power to semiconductor LD modules, and half
Conductor LD modules output end is of coupled connections by coupling optical fiber with the collimation focusing lens other end；
Acousto-optic Q modulation unit includes the acousto-optic Q modulation crystal in the double etalon coupled cavity lasers of injection seeded, radio-frequency modulator, drive
Dynamic device, power supply and radiator, the radio-frequency modulator are placed on a heat sink, and the acousto-optic Q modulation crystal is placed in radio-frequency modulator
Interior, power supply supplies power to driver, and driver is connected with radio-frequency modulator, the driver also with semiconductor laser power supply and power supply
Power-supply controller of electric connection in controller, synchronization pulse is produced by power-supply controller of electric driver is triggered, and by driving
Dynamic device drives radio-frequency modulator work according to trigger signal, and producing signal by radio-frequency modulator makes acousto-optic Q modulation crystal work；
In fiber coupling output semiconductor laser unit, semiconductor LD modules export laser by coupling fiber coupling to collimation
Condenser lens, laser crystal bar center then is reflexed to through 45 ° of light combination mirrors, realizes the pumping to laser crystal bar；
In the double etalon coupled cavity lasers of injection seeded, main oscillations intracavitary fraction of laser light is reflected into certainly through 45 degree of light combination mirrors
Injection seeded intracavitary, vibrate the selection for realizing single longitudinal mode repeatedly in self-seeding intracavitary.
The acousto-optic Q modulation crystal is placed in radio-frequency modulator, and power supply supplies power to driver, and driver connects with radio-frequency modulator
Connect, the driver is also connected with the signal generator in semiconductor laser power supply and power-supply controller of electric, is produced by signal generator
Raw synchronization pulse triggers to driver, and drives radio-frequency modulator work according to trigger signal by driver, by penetrating
Acoustic signals caused by converting modulator make acousto-optic Q modulation Crystallization " diffraction body grating " so that certain angle occurs for incident light
Deviation, and then form photoswitch；
A kind of described Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Form laser crystal
The Cr of rod, Er, Pr:GYSGG laser crystals are rectangular parallelepiped structure, Cr, Er, Pr:Former and later two end faces of GYSGG laser crystals
2.79 um and 0.966 um anti-reflection film, Cr, Er, Pr are plated respectively:It is 2% that GYSGG laser crystals, which mix Cr3+ concentration, and it is dense to mix Er3+
Spend for 18%, Pr3+ concentration is mixed for 0.2%, to reduce Cr, Er, Pr:The GYSGG laser crystal life times of the level, while improve laser
Repetition rate；Whole laser crystal bar wrapped up in the good double-deck indium paper bag of heat conduction be placed on it is heat sink in, it is heat sink good using heat conduction
Red copper material, linked using water pipe and cooling-water machine, realize 10 DEG C of laser crystal bar steady temperature control.
A kind of described Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Using optical fiber
Output semiconductor laser unit is coupled as semiconductor laser pumping source, in fiber coupling output semiconductor laser unit,
The working frequency of semiconductor laser power supply is 1~1 kHz, and can arbitrarily be adjusted, and pulsewidth is in 50~1000 μ s and can arbitrarily adjust
Section, electric current is and adjustable in 0~10 A, and voltage duty cycle is less than 50%；
Whole fiber coupling output semiconductor laser wavelength is 0.966 um, QCW patterns, and peak power is more than 150 W, partly led
Body laser is by a diameter of 200~600 um coupling optical fiber, by laser conduction to collimation focusing lens, collimation focusing lens
Focused on after being collimated to semiconductor laser and incide laser crystal bar end face, collimation focusing lens amplification ratio is 1:1.2~1:
1.4。
A kind of described Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Acousto-optic Q modulation
Crystal is middle infrared material TeO2, and the acousto-optic Q modulation crystal has good optically-active characteristic energy, the folding at 2.79 μm of centre wavelength
Rate ne=2.411, no=2.258 are penetrated, transmission region is 0.33~5 um, and damage threshold reaches 100MW/cm2, and 2.79 μm of increasings are plated at both ends
Permeable membrane.
A kind of described Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Etalon
Speculum, the first etalon, the second etalon base material are YAG or fused quartz, etalon speculum, the first etalon,
The two-sided 2.79 μm of part reflectance coatings for plating specific transmitance respectively of second etalon, using Free Spectral Range with realize to swash
The selection of light longitudinal mode；
The base material of 45 ° of light combination mirrors is white stone or calcirm-fluoride, 45 ° of light combination mirrors are two-sided plate respectively 0.966 μm of high-reflecting film and
2.79 μm high transmittance film；
The base material of output cavity piece is YSGG crystal or YAG crystal or calcirm-fluoride, and output cavity piece is close to acousto-optic Q modulation crystal
2.79 μm of 97% reflectance coating is simultaneously plated, output cavity piece another side plates 2.79 μm of anti-reflection films.
A kind of described Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Using double marks
Quasi- tool coupler self-seeding technology laser generation longitudinal mode is selected and narrowed, double etalon couplers be respectively by
First etalon speculum, 45 ° of light combination mirrors, laser crystal bar, acousto-optic Q modulation crystal, output cavity piece form main oscillations chamber and by the
Two etalon speculums, the 3rd etalon transmission mirror, 45 ° of light combination mirrors, laser crystal bar, acousto-optic Q modulation crystal, output cavity piece are formed
Self-seeding chamber；
A kind of described Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：It is anti-using etalon
The reflection Effect of Back-Cavity Mirror that mirror is penetrated as standing wave resonance chamber is selected and narrowed to the oscillation longitudinal mode of resonator.
The present invention be it is a kind of it is all solid state in infrared single longitudinal mode laser pumping source, specifically using two etalon couplers
Realize acousto-optic Q modulation the arteries and veins Cr, Er, Pr of semiconductor pumped 2.79 μm of single longitudinal mode laser output:GYSGG laser pumping sources.
The longitudinal mode choosing principles of the present invention：
Realize that longitudinal mode selects by using the self-seeding technology of double etalon couplers.It is strong for main oscillations, using mark
Gain of the quasi- tool speculum to laser crystal is modulated, and realizes the initial option to longitudinal mode；For injection seeded chamber, shaken to be weak
Chamber is swung, the control to longitudinal mode is realized using the etalon of insertion and the etalon arrangement of mirrors of speculum, realizes that single longitudinal mode shakes
Swing；The single longitudinal mode of seed self seeding intracavitary vibration provides seed signal for main oscillations chamber, to realize that main oscillations intracavitary single longitudinal mode shakes
Swing.
The acousto-optic Q modulation principle of the present invention：
Upper energy level population is set largely to accumulate by using the threshold value of Q-regulating technique change laser.When running up to maximum
Reduce the loss of chamber suddenly, laser generation is established rapidly, and upper level inversion population is consumed, so as to obtain its peak work
The very high giant-pulse of rate.
The present invention provides a kind of with Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, the laser utensil
There is repetition rate height（kHz）, single longitudinal mode, narrow spaces（ns）, high-energy（mJ）, stable output power and optical quality it is excellent etc.
Feature.The semiconductor pumped fuel factor that will greatly reduce laser that the present invention uses, conversion efficiency and repetition rate are improved, together
When improve optical quality and repetition rate；The present invention is infrared in being realized using the self-seeding technology of double etalon couplers
The single longitudinal mode vibration output of laser；The present invention uses new Cr, Er, Pr:GYSGG crystal, greatly reduce the thermal effect of laser
Should, conversion efficiency and repetition rate are improved, pulsewidth is narrowed by acousto-optic Q modulation so as to realize high-repetition-rate, narrow spaces, high optics matter
2.79 um of amount laser output.
The beneficial effect of the present invention compared with prior art is：
（1）The present invention uses novel C r, Er, Pr:GYSGG crystal, doping concentration are 0.2% Pr3+, help to reduce lower Cr,
Er,Pr:The GYSGG crystal laser life times of the level, be advantageous to reduce fuel factor so that output laser is stable, while improves laser
Repetition rate.
（2）The present invention easily realizes laser using control of the self-seeding technology of double etalon couplers to longitudinal mode
The single longitudinal mode vibration output of device, while can be worked under the pumping condition of high superthreshold multiple, be advantageous to the big of single longitudinal mode laser
Energy（High power）Output；Laser loss can be reduced using etalon speculum simultaneously, the height for being advantageous to mid-infrared laser turns
Change efficiency output.
（3）Profit is advantageous to reduce fuel factor using pumped at end face of semiconductor system so that output laser is stable.Pass through crystal
The pumping of axial direction increases absorption distance, is advantageous to the absorption of pump light.And pump light concentrated in laser crystal it is a limited number of
In what space so that pumping density improves, and laser threshold declines, so as to obtain the output of the laser of high frequency.
（4）The present invention uses acousto-optic Q modulation module, and acousto-optic Q modulation crystal selects antimony trichloride（TeO2）Crystal, the crystallophy
Stable chemical performance and not deliquescence, there is good translucency at 2.79 mum wavelengths, damage threshold is high, has other tune Q brilliant
The incomparable advantage of body, pulse is short, good beam quality for infrared pulsed lasers output in guarantee, and long-term work is reliable and stable.
（5）Adjusting Q crystal of the present invention selects antimony trichloride（TeO2）Crystal, modulation voltage is low, and 2.79 μm of Double End plating is anti-reflection
Film, small volume, simple in construction and dependable performance.
（6）The present invention carries out end pumping using optical-fiber coupling semiconductor laser, and pump beam is uniform, is advantageous to produce pole
The optical quality of high output laser.
（7）Preferred concatenation deionization polishing filter in the circulation loop of water-cooling system, ensure that water cooling in the present invention
The stability of part chilling temperature.
Brief description of the drawings
Fig. 1 is structure principle chart of the present invention.
Fig. 2 is the double etalon coupled cavity lasers structure charts of injection seeded in the present invention.
Embodiment
As shown in Figure 1 and Figure 2, a kind of Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, including seed note
Enter double etalon coupled cavity lasers, fiber coupling output semiconductor laser unit, acousto-optic Q modulation unit and etalon temperature controls
Unit processed, wherein：
The double etalon coupled cavity lasers of injection seeded include Cr, Er, Pr:The laser crystal bar 4 that GYSGG laser crystals are formed,
Laser crystal bar 4 is placed in heat sink 3, in front of the front end of laser crystal bar 4 on the central axis extension line of laser crystal bar 4 according to
Secondary to be provided with acousto-optic Q modulation crystal 2, output cavity piece 1, the rear end rear of laser crystal bar 4 is located at the extension of the central axis of laser crystal bar 4
45 ° of light combination mirrors 5, etalon speculum 6 are disposed with line, and 45 ° of light combination mirrors 5 are centrally located at the central shaft of laser crystal bar 4
On line extension line, the is sequentially provided with positioned at 45 ° of center lefts of light combination mirror 5 and along perpendicular to the central axial direction of laser crystal bar 4
One etalon 8, the second etalon 7, positioned at 45 ° of center rights of light combination mirror 5 and along perpendicular to the central axial direction of laser crystal bar 4
Provided with collimation focusing lens 9, the one end of collimation focusing lens 9 towards 45 ° of centers of light combination mirror 5, by the first etalon speculum 6,
45 ° of light combination mirrors 5, laser crystal bar 4, acousto-optic Q modulation crystal 2, output cavity piece 1 form main oscillations chamber, by the second etalon speculum
7th, 7,45 ° of light combination mirrors 5 of the second etalon transmission mirror, laser crystal bar 4, acousto-optic Q modulation crystal 2, output cavity piece 1 are formed notes from seed
Enter chamber；
Etalon temperature conditioning unit include heat sink and heat-insulation layer 17, ceramic heating flake 18, temperature sensor 19, intelligent temperature controller 21 and
Constant voltage source 20, wherein the second etalon 7 is placed in heat sink and heat-insulation layer 17, ceramic heating flake 18 is close to heat sink and heat-insulation layer 17
Side, temperature sensor 19 are close to the heat sink and opposite side of heat-insulation layer 17, ceramic heating flake 18 and temperature sensor 19 respectively with intelligence
Energy temperature controller 21 connects, and constant voltage source 20 supplies power to ceramic heating flake 18 and intelligent temperature controller 21 respectively；
Fiber coupling output semiconductor laser unit includes semiconductor LD modules 11, semiconductor laser power supply and power-supply controller of electric
12nd, optical fiber 10 is coupled；In semiconductor laser power supply and power-supply controller of electric, power-supply controller of electric 12 is connected with semiconductor laser power supply,
The parameter of semiconductor laser power supply is configured and controlled by power-supply controller of electric 12, semiconductor laser power supply supplies power to semiconductor
LD modules 11, the output end of semiconductor LD modules 11 are of coupled connections by coupling optical fiber 10 with the other end of collimation focusing lens 9；
Acousto-optic Q modulation unit include acousto-optic Q modulation crystal 2 in the double etalon coupled cavity lasers of injection seeded, radio-frequency modulator 15,
Driver 14, power supply 13 and radiator 16, radio-frequency modulator 15 are placed on radiator 16, and acousto-optic Q modulation crystal 2 is placed in radio frequency tune
In device 15 processed, power supply 13 supplies power to driver 14, and driver 14 is connected with radio-frequency modulator 15, and driver 14 also swashs with semiconductor
Power-supply controller of electric 12 in photoelectric source and power-supply controller of electric is connected, and synchronization pulse is produced to driver by power-supply controller of electric 12
14 are triggered, and drive radio-frequency modulator 15 to work according to trigger signal by driver 14, by the generation sound of radio-frequency modulator 15
Ripple signal makees acousto-optic Q modulation crystal work 2；
In fiber coupling output semiconductor laser unit, semiconductor LD modules 11 export laser and are coupled to by coupling optical fiber 10
Collimation focusing lens 9, the center of laser crystal bar 4 then is reflexed to through 45 ° of light combination mirrors 5, realizes the pumping to laser crystal bar 4；
In the double etalon coupled cavity lasers of injection seeded, main oscillations intracavitary fraction of laser light is reflected into through 45 degree of light combination mirrors 5
Self-seeding intracavitary, vibrate the selection for realizing single longitudinal mode repeatedly in self-seeding intracavitary.Double etalon couplers are respectively
By the first etalon speculum, 45 ° of light combination mirrors, laser crystal bar, acousto-optic Q modulation crystal, output cavity piece form main oscillations chamber and by
Second etalon speculum, the 3rd etalon transmission mirror, 45 ° of light combination mirrors, laser crystal bar, acousto-optic Q modulation crystal, output cavity piece structure
Into self-seeding chamber.
In the present invention, the Cr, Er, Pr of laser crystal bar 4 are formed:GYSGG laser crystals are rectangular parallelepiped structure, Cr, Er,
Pr:2.79 um and 0.966 um anti-reflection film, Cr, Er, Pr are plated respectively in former and later two end faces of GYSGG laser crystals:GYSGG
It is 2% that laser crystal, which mixes Cr3+ concentration, and it is 18% to mix Er3+ concentration, and it is 0.2% to mix Pr3+ concentration, to reduce Cr, Er, Pr:GYSGG
The laser crystal life time of the level, while improve laser repetition rate；The whole laser crystal bar 4 good double-deck indium paper bag of heat conduction
Wrap up in and be placed in heat sink 3, heat sink 3, using the good red copper material of heat conduction, are linked using water pipe and cooling-water machine, realize laser crystal
10 DEG C of the steady temperature control of rod 4.
In the present invention, using fiber coupling output semiconductor laser unit as semiconductor laser pumping source, optical fiber coupling
Close in output semiconductor laser unit, the working frequency of semiconductor laser power supply is 1~1 kHz, and can arbitrarily be adjusted, pulsewidth
It can adjust in 50~1000 μ s and arbitrarily, electric current is and adjustable in 0~10 A, and voltage duty cycle is less than 50%；
Whole fiber coupling output semiconductor laser wavelength is 0.966 um, QCW patterns, and peak power is more than 150W, partly led
Body laser is by a diameter of 200~600 um coupling optical fiber 10, by laser conduction to collimation focusing lens 9, collimation focusing
Lens 9 focus on after being collimated to semiconductor laser and incide the end face of laser crystal bar 4, and the amplification ratio of collimation focusing lens 9 is 1:
1.2~1:1.4.
In the present invention, acousto-optic Q modulation crystal 2 is middle infrared material TeO2, and the acousto-optic Q modulation crystal 2 has good optically-active special
Performance, refractive index ne=2.411 at 2.79 μm of centre wavelength, no=2.258, transmission region are 0.33~5 um, damage threshold
Value plates 2.79 μm of anti-reflection films up to 100 MW/cm2, both ends.
In the present invention, etalon speculum 6, the first etalon 8, the base material of the second etalon 7 are YAG or molten stones
English, etalon speculum 6, the first etalon 8,7 two-sided 2.79 μm of parts for plating specific transmitance respectively of the second etalon are reflected
Film, using Free Spectral Range to realize the selection to laser longitudinal module；
The base material of 45 ° of light combination mirrors 5 is white stone or calcirm-fluoride, 45 ° of light combination mirrors 5 are two-sided plate respectively 0.966 μm of high-reflecting film and
2.79 μm high transmittance film；
The base material of output cavity piece 1 is YSGG crystal or YAG crystal or calcirm-fluoride, and output cavity piece 1 is close to acousto-optic Q modulation crystal
2 one side plates 2.79 μm of 97% reflectance coating, and the another side of output cavity piece 1 plates 2.79 μm of anti-reflection films.
In the present invention, laser generation longitudinal mode is selected and pressed using the self-seeding technology of double etalon couplers
It is narrow.Double etalon couplers are by the first etalon speculum, 45 ° of light combination mirrors, laser crystal bar, acousto-optic Q modulation crystal, defeated respectively
Go out chamber piece form main oscillations chamber and by the second etalon speculum, the 3rd etalon transmission mirror, 45 ° of light combination mirrors, laser crystal bar,
The self-seeding chamber that acousto-optic Q modulation crystal, output cavity piece are formed.
In the present invention, indulged using reflection Effect of Back-Cavity Mirror vibration to resonator of the etalon speculum 6 as standing wave resonance chamber
Mould is selected and narrowed.
The present invention can work under 1~1kHz repetition rates, realize infrared sharp in short pulse, high-energy, single longitudinal mode
Light output.
Claims (7)
1. a kind of Gao Zhongying, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, it is characterised in that：Including the double marks of injection seeded
Quasi- tool coupled cavity lasers, fiber coupling output semiconductor laser unit, acousto-optic Q modulation unit and etalon temperature control are single
Member, wherein：
The double etalon coupled cavity lasers of injection seeded include Cr, Er, Pr:The laser crystal bar that GYSGG laser crystals are formed, institute
State laser crystal bar be placed on it is heat sink in, in front of laser crystal nose on laser crystal bar central axis extension line successively
Be provided with acousto-optic Q modulation crystal, output cavity piece, laser crystal bar rear end rear be located on laser crystal bar central axis extension line according to
It is secondary to be provided with 45 ° of light combination mirrors, etalon speculum, and 45 ° of light combination mirrors are centrally located on laser crystal bar central axis extension line,
The first etalon, second are sequentially provided with positioned at 45 ° of light combination mirror center lefts and along perpendicular to laser crystal bar central axial direction
Etalon, collimation focusing lens are provided with perpendicular to laser crystal bar central axial direction positioned at 45 ° of light combination mirror center rights and edge,
The collimation focusing lens one end towards 45 ° of light combination mirror centers, by the first etalon speculum, 45 ° of light combination mirrors, laser crystal bar,
Acousto-optic Q modulation crystal, output cavity piece form main oscillations chamber, by the second etalon speculum, the 3rd etalon transmission mirror, 45 ° of conjunction beams
Mirror, laser crystal bar, acousto-optic Q modulation crystal, output cavity piece form self-seeding chamber；
Etalon temperature conditioning unit includes heat sink and heat-insulation layer, ceramic heating flake, temperature sensor, intelligent temperature controller and constant pressure electricity
Source, wherein the second etalon is placed in heat sink and heat-insulation layer, ceramic heating flake is close to heat sink and heat-insulation layer side, temperature sensor
It is close to heat sink and heat-insulation layer opposite side, ceramic heating flake and temperature sensor are connected with intelligent temperature controller respectively, constant voltage source point
Ceramic heating flake and intelligent temperature controller are not supplied power to；
Fiber coupling output semiconductor laser unit include semiconductor LD modules, semiconductor laser power supply and power-supply controller of electric,
Couple optical fiber；In semiconductor laser power supply and power-supply controller of electric, power-supply controller of electric is connected with semiconductor laser power supply, by power supply control
Device processed is configured and controlled to the parameter of semiconductor laser power supply, and semiconductor laser power supply supplies power to semiconductor LD modules, and half
Conductor LD modules output end is of coupled connections by coupling optical fiber with the collimation focusing lens other end；
Acousto-optic Q modulation unit includes the acousto-optic Q modulation crystal in the double etalon coupled cavity lasers of injection seeded, radio-frequency modulator, drive
Dynamic device, power supply and radiator, the radio-frequency modulator are placed on a heat sink, and the acousto-optic Q modulation crystal is placed in radio-frequency modulator
Interior, power supply supplies power to driver, and driver is connected with radio-frequency modulator, the driver also with semiconductor laser power supply and power supply
Signal generator connection in controller, synchronization pulse is produced by signal generator driver is triggered, and by driving
Dynamic device drives radio-frequency modulator work according to trigger signal, and the acoustic signals as caused by radio-frequency modulator make acousto-optic Q modulation crystal shape
Into " diffraction body grating " so that the deviation of certain angle occurs for incident light, and then forms photoswitch；
In fiber coupling output semiconductor laser unit, semiconductor LD modules export laser by coupling fiber coupling to collimation
Condenser lens, laser crystal bar center then is reflexed to through 45 ° of light combination mirrors, realizes the pumping to laser crystal bar；
In the double etalon coupled cavity lasers of injection seeded, main oscillations intracavitary fraction of laser light is reflected into certainly through 45 ° of light combination mirrors
Injection seeded intracavitary, vibrate the selection for realizing single longitudinal mode repeatedly in self-seeding intracavitary.
2. pair etalon coupler is brilliant by the first etalon speculum, 45 ° of light combination mirrors, laser crystal bar, acousto-optic Q modulation respectively
Body, output cavity piece form main oscillations chamber and by the second etalon speculum, the 3rd etalon transmission mirror, 45 ° of light combination mirrors, laser crystalline substances
The self-seeding chamber that body rod, acousto-optic Q modulation crystal, output cavity piece are formed；
A kind of Gao Zhongying according to claim 1, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, its feature exist
In：Form the Cr, Er, Pr of laser crystal bar:GYSGG laser crystals are rectangular parallelepiped structure, Cr, Er, Pr:GYSGG laser crystals
Former and later two end faces plate 2.79 um and 0.966 um anti-reflection film, Cr, Er, Pr respectively:It is dense that GYSGG laser crystals mix Cr3+
Spend for 2%, mix Er3+ concentration for 18%, Pr3+ concentration is mixed for 0.2%, to reduce Cr, Er, Pr:The GYSGG laser crystal life times of the level,
Improve laser repetition rate simultaneously；Whole laser crystal bar wrapped up in the good double-deck indium paper bag of heat conduction be placed on it is heat sink in, heat
The heavy red copper material good using heat conduction, is linked using water pipe and cooling-water machine, realizes the steady temperature control of 10 DEG C of laser crystal bar
System.
3. a kind of Gao Zhongying according to claim 1, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, its feature exist
In：Swashed using fiber coupling output semiconductor laser unit as semiconductor laser pumping source, fiber coupling output semiconductor
In light device unit, the working frequency of semiconductor laser power supply is 1~1 kHz, and can arbitrarily be adjusted, and pulsewidth is in 50~1000 μ s
And can arbitrarily adjust, electric current is and adjustable in 0~10 A, and voltage duty cycle is less than 50%；
Whole fiber coupling output semiconductor laser wavelength is 0.966um, QCW patterns, and peak power is more than 150W, semiconductor
Laser is by a diameter of 200~600um coupling optical fiber, by laser conduction to collimation focusing lens, collimation focusing lens pair
Semiconductor laser focuses on after being collimated and incides laser crystal bar end face, and collimation focusing lens amplification ratio is 1:1.2~1:
1.4。
4. a kind of Gao Zhongying according to claim 1, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, its feature exist
In：Acousto-optic Q modulation crystal is middle infrared material TeO2, and the acousto-optic Q modulation crystal has good optically-active characteristic energy, in centre wavelength
Refractive index ne=2.411 at 2.79 μm, no=2.258, transmission region are 0.33~5 um, and damage threshold reaches 100MW/cm2, two
2.79 μm of anti-reflection films of end plating.
5. a kind of Gao Zhongying according to claim 1, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, its feature exist
In：First etalon speculum, the second etalon speculum and the 3rd etalon transmission mirror base material are YAG or molten stones
English, the first etalon speculum, the second etalon speculum and the 3rd etalon transmission mirror is two-sided plates specific transmitance respectively
2.79 μm part reflectance coating, using Free Spectral Range to realize the selection to laser longitudinal module；
The base material of 45 ° of light combination mirrors is white stone or calcirm-fluoride, and 0.966 μm of 2.79 μm of high-reflecting film is plated in 45 ° of light combination mirror one side platings
High transmittance film, another side plating to 2.79 μm of transmitances be 98% high transmittance film；
The base material of output cavity piece is YSGG crystal or YAG crystal or calcirm-fluoride, and output cavity piece is close to acousto-optic Q modulation crystal
2.79 μm of 97% reflectance coating is simultaneously plated, output cavity piece another side plates 2.79 μm of anti-reflection films.
6. a kind of Gao Zhongying according to claim 1, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, its feature exist
In：Laser generation longitudinal mode is selected and narrowed using the self-seeding technology of double etalon couplers.
7. a kind of Gao Zhongying according to claim 1, single longitudinal mode, the um of narrow spaces 2.79 laser pumping source, its feature exist
In：The oscillation longitudinal mode of resonator is selected and pressed using reflection Effect of Back-Cavity Mirror of the etalon speculum as standing wave resonance chamber
It is narrow.
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| CN108054627A (en) * | 2018-01-24 | 2018-05-18 | 中国工程物理研究院应用电子学研究所 | A kind of even sliding time waveform narrow linewidth 1319nm pulse lasers |
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| CN109714938A (en) * | 2019-02-28 | 2019-05-03 | 威海云山科技有限公司 | A kind of radiant heat transfer radiator |
| CN110932080A (en) * | 2019-05-09 | 2020-03-27 | 长春理工大学 | Single longitudinal mode laser |
| CN112350147A (en) * | 2020-11-06 | 2021-02-09 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
| CN117559207A (en) * | 2024-01-10 | 2024-02-13 | 闽都创新实验室 | High-precision narrow linewidth wavelength adjustable pulse laser output method |
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| CN108054627A (en) * | 2018-01-24 | 2018-05-18 | 中国工程物理研究院应用电子学研究所 | A kind of even sliding time waveform narrow linewidth 1319nm pulse lasers |
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| CN109687266A (en) * | 2018-12-19 | 2019-04-26 | 山东大学 | A kind of 2.79 microns of erbium lasers of high-peak power |
| CN109714938A (en) * | 2019-02-28 | 2019-05-03 | 威海云山科技有限公司 | A kind of radiant heat transfer radiator |
| CN110932080A (en) * | 2019-05-09 | 2020-03-27 | 长春理工大学 | Single longitudinal mode laser |
| CN112350147A (en) * | 2020-11-06 | 2021-02-09 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
| CN117559207A (en) * | 2024-01-10 | 2024-02-13 | 闽都创新实验室 | High-precision narrow linewidth wavelength adjustable pulse laser output method |
| CN117559207B (en) * | 2024-01-10 | 2024-04-26 | 闽都创新实验室 | High-precision narrow linewidth wavelength adjustable pulse laser output method |
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Application publication date: 20171215 |