CN105322429A - Semiconductor laser end plane pumping Er: YSGG electro-optical Q-switched laser - Google Patents
Semiconductor laser end plane pumping Er: YSGG electro-optical Q-switched laser Download PDFInfo
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- CN105322429A CN105322429A CN201510808582.0A CN201510808582A CN105322429A CN 105322429 A CN105322429 A CN 105322429A CN 201510808582 A CN201510808582 A CN 201510808582A CN 105322429 A CN105322429 A CN 105322429A
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Abstract
The invention discloses a semiconductor laser end plane pumping Er: YSGG electro-optical Q-switched laser. The semiconductor laser end plane pumping Er: YSGG electro-optical Q-switched laser comprises a laser rod; a polarizer, an LGS electro-optical Q-switched crystal, and an output cavity sheet are arranged in front of the front end of the laser rod; a 45-degree reflector and a collimation focusing lens are arranged behind the back end of the laser rod; a 1/4 wave plate and a back cavity sheet are arranged on one side of the reflecting surface of the 45-degree reflector behind the back end of the laser rod in sequence; the electro-optical Q-switched laser also comprises a controller, a semiconductor laser, a semiconductor laser power supply and a voltage-decreasing Q-switched high voltage module; the semiconductor laser is coupled with the back end of the collimation focusing lens through a silica fiber; the semiconductor laser power supply and the voltage-decreasing Q-switched high voltage module are connected with the controller separately; the semiconductor laser power supply supplies power to the semiconductor laser; and the voltage-decreasing Q-switched high voltage module is connected with the LGS electro-optical Q-switched crystal. The electro-optical Q-switched laser has the characteristics of high repetition frequency, narrow laser pulse width, good laser mode and the like.
Description
Technical field
The present invention relates to field of lasers, specifically a kind of semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser.
Background technology
The erbium laser of 2.79 mum wavelengths has important application in fields such as biologic medical, scientific research, military affairs.2.79 μm of pulse lasers of high-peak power, high pulse energy, high repetition frequency, high optical quality are used as the pumping source of optical parametric oscillator, to obtain the enough strong mid-infrared laser of 3-12 μm, there is important application in fields such as spectrometer, Atmospheric Survey, detection of poison gas, electrooptical countermeasuress.Therefore, develop 2.79 μm of burst pulses, high-energy, the laser technology of high repetition frequency and laser and there is important using value.
The thermal effect of flash-lamp pump pumping system is serious, and conversion efficiency is low, is difficult to obtain the high-octane Laser output of Gao Zhongying.The erbium laser of semiconductor laser side-pumping can obtain the high-octane static Laser output of high repetition frequency, but in electric-optically Q-switched system, owing to there is more serious thermal birefringence effect in erbium crystal, the hot depolarization caused, cannot realize high frequency output; Be subject to the restriction of electro-optic Q-switched crystal, the polarizer, chamber sheet film system damage threshold equally, the Q-switch laser output of high-energy, high optical quality cannot be realized.
The laser oscillator that the semiconductor laser end pumping Er:YSGG crystal utilizing optical fiber to export, LGS adjusting Q crystal, the deielectric-coating polarizer form for critical piece, under the condition of lower pump power, realize the output of high repetition frequency, narrow spaces, high-quality seed laser; Realize amplifying by side-pumping module again, the superlaser of high-repetition-rate, high-energy, high optical quality, narrow linewidth can be realized.
summary of the inventionthe object of this invention is to provide a kind of semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, can be used as seed laser, to solve the existing technical problem of 2.79 μm of laser realizing high-repetition-rate, high-energy, high optical quality, narrow linewidth.
In order to achieve the above object, the technical solution adopted in the present invention is:
Semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: comprise the laser bar be made up of Er:YSGG laser crystal, front, laser bar front end is disposed with the polarizer along laser bar central axis line stretcher, the LGS electro-optic Q-switched crystal be made up of callium-lanthanum silicate crystal, output cavity sheet, rear, laser bar rear end is disposed with 45 degree of speculums along laser bar central axis line stretcher, collimation focusing lens, described collimation focusing lens front is towards laser bar rear end, rear, laser bar rear end is positioned at 45 degree of mirror reflection surface sides and is disposed with quarter wave plate, back cavity sheet, also include controller, semiconductor laser, semiconductor laser power supply, move back pressure tune Q high-pressure modular, described semiconductor laser is of coupled connections by silica fiber and collimation focusing lens rear, described semiconductor laser power supply, move back pressure and adjust Q high-pressure modular access controller respectively, and semiconductor laser power supply supplies power to semiconductor laser, move back pressure and adjust Q high-pressure modular to be connected with LGS electro-optic Q-switched crystal.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: in described laser bar, Er:YSGG laser crystal is column structure, Er:YSGG laser crystal front and rear end is bonding YSGG crystal respectively, and Er:YSGG laser crystal front and rear end plates the anti-reflection film of 2.79um and 966nm respectively, Er:YSGG laser crystal doping content is between 30-50%; Whole laser bar heat conduction good indium paper bag wrap up in be placed on heat sink in, the good red copper material of heat sink employing heat conduction, and adopt TEC to carry out heat exchange, takes away the heat changed with fan, the temperature realizing laser crystal controls.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: described semiconductor laser centre wavelength is 966nm, QCW pattern, peak power is greater than 150W, semiconductor laser is the silica fiber of 200-600um by diameter, by laser conduction to collimation focusing lens, collimation focusing lens are focused into after collimating semiconductor laser and are mapped to laser bar facets, and amplification ratio is 1:2 ~ 1:4.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, is characterized in that: the callium-lanthanum silicate crystal forming LGS electro-optic Q-switched crystal is single shaft gyrotropi crystal, and be refractive index n=1.8556 at 2.79 μm of places at wavelength, damage threshold reaches 750MW/cm
2, callium-lanthanum silicate crystal is cut into cuboid along X-Y-Z direction, X-direction added electric field, and two Y-Z faces are symmetrical parallel gold-plated as electrode; Lead to light along Z-direction, two X-Y plane plates 2.79 μm of anti-reflection films.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, is characterized in that: described quarter wave plate is by magnesium fluoride or YSGG crystal or YAG crystal or calcirm-fluoride or Al
2o
3be processed into, quarter wave plate clear aperture is 12mm, the anti-reflection film of two-sided plating 2.79 μm, and perpendicular to light path, optical axis direction is parallel to polarization direction, is placed between 45 degree of reflecting optics and back cavity sheet.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: described 45 degree of speculums are by K9, along 45 degree of incidences, one side near laser crystal plates the high transmittance film of be all-trans film and the 966nm of 2.79 μm, near the anti-reflection film of collimation focusing lens another side plating 966nm.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: the described polarizer is the incident Brewster's angle deielectric-coating polarizer, by white stone or YSGG crystal or YAG crystal or magnesium fluoride or fluoridize calcium tablet plated film and make, require to Tp component through, Ts component reflects, require that extinction ratio is greater than 100:1, damage threshold is greater than 200MW/cm
2.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: described back cavity sheet and output cavity sheet are white stone or YSGG crystal or YAG crystal or calcirm-fluoride or magnesium fluoride and make, wherein back cavity sheet plates 2.79 μm of films that are all-trans near the face of quarter wave plate, and output cavity sheet is near the face of LGS electro-optic Q-switched crystal plating 5% ~ 95% reflectance coating.2.79 μm of anti-reflection films are plated in face outside chamber.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, is characterized in that: the operating frequency of described semiconductor laser power supply is 1 ~ 500Hz, and pulsewidth is adjustable at 50 μ s-1000 μ s, and electric current is at 0-10A, and duty ratio is less than 50%.
Described semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, is characterized in that: the parameter of described controller to semiconductor laser power supply arranges and control, and produces synchronization pulse and adjust Q high-pressure modular to trigger to moving back pressure.
Tune Q principle of the present invention, makes upper energy level population accumulate in a large number by the threshold value using Q-regulating technique to change laser.Suddenly make the loss in chamber reduce when running up to maximum, laser generation is set up rapidly, and upper level inversion population is consumed, thus obtains the very high giant pulse of peak power.
The invention provides a kind of end pumping Er:YSGG electro-optical Q-switching laser with high repetition frequency, nanosecond pulsewidth, high optical quality, this laser have that repetition rate is high, stable output power and the excellent feature of optical quality.The semiconductor pumped Er:YSGG crystal that the present invention adopts will reduce the thermal effect of laser greatly, improve conversion efficiency and repetition rate, adopt end pumping technique to substantially increase optical quality and repetition rate, narrow pulsewidth by electric-optically Q-switched thus realize the Laser output of 2.79um of high-repetition-rate, narrow spaces, high optical quality.
The present invention's beneficial effect is compared with prior art:
(1) the present invention adopts semiconductor laser end pumping Er:YSGG crystal, produces pulse laser.Utilize semiconductor pump pumping system to be conducive to reducing thermal effect, Output of laser is stablized.By crystal axis to pumping increase absorption distance, be conducive to the absorption of pump light.And pump light concentrates in limited geometric space at laser crystal, pumping density is improved, laser threshold declines, thus obtains the output of the little energy of high frequency.
(2) the present invention adopts optical-fiber coupling semiconductor laser to carry out pumping, and pump beam is even, is conducive to the optical quality producing high Output of laser.
(3) the present invention adopts and moves back pressure tune Q high-pressure modular, and LGS adjusting Q crystal selects LGS (La
3ga
5siO
14, LGS) and crystal, this crystal not deliquescence, physical and chemical performance is stablized, good in the light transmission of 2.79 mum wavelengths, damage threshold is high, has the advantage that other adjusting Q crystal is incomparable, in guarantee, infrared pulsed lasers exports short, the good beam quality of pulse, and long-term work is reliable and stable.
(4) LGS adjusting Q crystal of the present invention adopts callium-lanthanum silicate crystal, for reducing quarter-wave voltage, the LGS electro-optic Q-switched crystal that X-Y-Z direction is cut is designed to cuboid, transverse electric field (direction of an electric field is vertical with light path) is added in crystal X-direction, the two gold-plated uniformities that ensure that electric field as electrode in Y-Z face, lead to light along Z-direction, two X-Y plane plates 2.79 μm of anti-reflection films, volume is little, simple and reliable for structure.
(5) laser of the present invention uses the hot depolarization technology of wave plate for compensation, hot depolarization problem when solving high-energy pumping, and make the laser facula pattern that exports good, Energy distribution is even.
(6), under the pump light source of laser of the present invention is operated in modulating mode and lower power level, thermal lens and hot depolarization is reduced.
(7) the present invention adopts semiconductor pumped Er:YSGG crystal, will greatly reduce the thermal effect of laser, improves conversion efficiency and repetition rate, can obtain 2.79 μm of Laser outputs of high light beam quality.
Accompanying drawing explanation
Fig. 1 is structure principle chart of the present invention.
Fig. 2 is light path part local structural graph of the present invention.
Embodiment
See Fig. 1, shown in Fig. 2, semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, comprise the laser bar 4 be made up of Er:YSGG laser crystal, front, laser bar 4 front end is disposed with the polarizer 3 along laser bar 4 central axis line stretcher, the LGS electro-optic Q-switched crystal 2 be made up of callium-lanthanum silicate crystal, output cavity sheet 1, rear, laser bar 4 rear end is disposed with 45 degree of speculums 5 along laser bar 4 central axis line stretcher, collimation focusing lens 6, collimation focusing lens 6 front end is towards laser bar 4 rear end, rear, laser bar 4 rear end is positioned at 45 degree of speculum 5 reflecting surface sides and is disposed with quarter wave plate 7, back cavity sheet 8, also include controller 9, semiconductor laser 10, semiconductor laser power supply 11, move back pressure tune Q high-pressure modular 13, semiconductor laser 10 is of coupled connections by silica fiber 12 and collimation focusing lens 6 rear end, semiconductor laser power supply 11, move back pressure and adjust Q high-pressure modular 13 access controller 9 respectively, and semiconductor laser power supply 11 supplies power to semiconductor laser 10, move back pressure and adjust Q high-pressure modular 13 to be connected with LGS electro-optic Q-switched crystal 2.
In laser bar 4, Er:YSGG laser crystal is column structure, Er:YSGG laser crystal front and rear end is bonding YSGG crystal respectively, and Er:YSGG laser crystal front and rear end plates the anti-reflection film of 2.79um and 966nm respectively, and laser crystal doping content is between 30-50%; Whole laser bar 4 with heat conduction good indium paper bag wrap up in be placed on heat sink in, the good red copper material of heat sink employing heat conduction, and adopt TEC to carry out heat exchange, takes away the heat changed with fan, the temperature realizing laser crystal controls.
Semiconductor laser 10 centre wavelength is 966nm, QCW pattern, peak power is greater than 150W, semiconductor laser 10 is the silica fiber 12 of 200-600um by diameter, by laser conduction to collimation focusing lens 6, be focused into after collimation focusing lens 6 pairs of semiconductor lasers collimate and be mapped to laser bar 4 end face, amplification ratio is 1:2 ~ 1:4.
The callium-lanthanum silicate crystal forming LGS electro-optic Q-switched crystal 2 is single shaft gyrotropi crystal, and be refractive index n=1.8556 at 2.79 μm of places at wavelength, damage threshold reaches 750MW/cm
2, callium-lanthanum silicate crystal is cut into cuboid along X-Y-Z direction, X-direction added electric field, and two Y-Z faces are symmetrical parallel gold-plated as electrode; Lead to light along Z-direction, two X-Y plane plates 2.79 μm of anti-reflection films.
Quarter wave plate 7 is by magnesium fluoride or YSGG crystal or YAG crystal or calcirm-fluoride or Al
2o
3be processed into, quarter wave plate 7 clear aperture is 12mm, the anti-reflection film of two-sided plating 2.79 μm, and perpendicular to light path, optical axis direction is parallel to polarization direction, is placed between 45 degree of reflecting optics 5 and back cavity sheet 8.
45 degree of speculums 5 are processed into by K9, fused quartz, incident along 45 degree, incident along 45 degree, and the one side near laser crystal plates the high transmittance film of be all-trans film and the 966nm of 2.79 μm, near the anti-reflection film of collimation focusing lens another side plating 966nm.
The polarizer 3 is incident Brewster's angle deielectric-coating polarizers, by white stone or YSGG crystal or YAG crystal or magnesium fluoride or fluoridize calcium tablet plated film and make, require to Tp component through, Ts component reflects, require that extinction ratio is greater than 100:1, damage threshold is greater than 200MW/cm
2.
Back cavity sheet 8 and output cavity sheet 1 are white stone or YSGG crystal or YAG crystal or calcirm-fluoride or magnesium fluoride and make, wherein back cavity sheet plates 2.79 μm of films that are all-trans near the face of quarter wave plate, and output cavity sheet is near the face of LGS electro-optic Q-switched crystal plating 5% ~ 95% reflectance coating.2.79 μm of anti-reflection films are plated in face outside chamber.
The operating frequency of semiconductor laser power supply 11 is 1 ~ 500Hz, and pulsewidth is adjustable at 50 μ s-1000 μ s, and electric current is at 0-10A, and duty ratio is less than 50%.
The parameter of controller 9 pairs of semiconductor laser power supplies 11 arranges and controls, and produces synchronization pulse and adjust Q high-pressure modular 13 to trigger to moving back pressure.
The present invention can work under 1-500Hz repetition rate, realizes the Laser output of burst pulse, high optical quality.
Claims (10)
1. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser, it is characterized in that: comprise the laser bar be made up of Er:YSGG laser crystal, front, laser bar front end is disposed with the polarizer along laser bar central axis line stretcher, the LGS electro-optic Q-switched crystal be made up of callium-lanthanum silicate crystal, output cavity sheet, rear, laser bar rear end is disposed with 45 degree of speculums along laser bar central axis line stretcher, collimation focusing lens, described collimation focusing lens front is towards laser bar rear end, rear, laser bar rear end is positioned at 45 degree of mirror reflection surface sides and is disposed with quarter wave plate, back cavity sheet, also include controller, semiconductor laser, semiconductor laser power supply, move back pressure tune Q high-pressure modular, described semiconductor laser is of coupled connections by silica fiber and collimation focusing lens rear, described semiconductor laser power supply, move back pressure and adjust Q high-pressure modular access controller respectively, and semiconductor laser power supply supplies power to semiconductor laser, move back pressure and adjust Q high-pressure modular to be connected with LGS electro-optic Q-switched crystal.
2. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: in described laser bar, Er:YSGG laser crystal is column structure, Er:YSGG laser crystal front and rear end is bonding YSGG crystal respectively, and Er:YSGG laser crystal front and rear end plates the anti-reflection film of 2.79um and 966nm respectively, Er mixed by Er:YSGG laser crystal
3+concentration is between 30-50%; Whole laser bar heat conduction good indium paper bag wrap up in be placed on heat sink in, the good red copper material of heat sink employing heat conduction, and adopt TEC to carry out heat exchange, takes away the heat changed with fan, the temperature realizing laser crystal controls.
3. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: described semiconductor laser centre wavelength is 966nm, QCW pattern, peak power is greater than 150W, semiconductor laser is the silica fiber of 200-600um by diameter, by laser conduction to collimation focusing lens, collimation focusing lens are focused into after collimating semiconductor laser and are mapped to laser bar facets, and collimation focusing lens amplification ratio is 1:2 ~ 1:4.
4. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: the callium-lanthanum silicate crystal forming LGS electro-optic Q-switched crystal is single shaft gyrotropi crystal, in refractive index n=1.8556 that wavelength is 2.79 μm of places, damage threshold reaches 750MW/cm
2, callium-lanthanum silicate crystal is cut into cuboid along X-Y-Z direction, X-direction added electric field, and two Y-Z faces are symmetrical parallel gold-plated as electrode; Lead to light along Z-direction, two X-Y plane plates 2.79 μm of anti-reflection films.
5. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, is characterized in that: described quarter wave plate is by magnesium fluoride or YSGG crystal or YAG crystal or calcirm-fluoride or Al
2o
3be processed into, quarter wave plate clear aperture is 8mm, the anti-reflection film of two-sided plating 2.79 μm, and perpendicular to light path, optical axis direction is parallel to polarization direction, is placed between 45 degree of reflecting optics and back cavity sheet.
6. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: described 45 degree of speculums are processed into by K9, fused quartz, incident along 45 degree, one side near laser crystal plates the high transmittance film of be all-trans film and the 966nm of 2.79 μm, near the anti-reflection film of collimation focusing lens another side plating 966nm.
7. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that:: the described polarizer is the incident Brewster's angle deielectric-coating polarizer, by white stone or YSGG crystal or YAG crystal or magnesium fluoride or fluoridize calcium tablet plated film and make, require to Tp component through, Ts component reflects, require that extinction ratio is greater than 100:1, damage threshold is greater than 200MW/cm
2.
8. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: described back cavity sheet and output cavity sheet are white stone or YSGG crystal or YAG crystal or calcirm-fluoride or magnesium fluoride and make, wherein back cavity sheet plates 2.79 μm of films that are all-trans near the face of quarter wave plate, output cavity sheet is near the face of LGS electro-optic Q-switched crystal plating 5% ~ 95% reflectance coating, and 2.79 μm of anti-reflection films are plated in the face outside chamber.
9. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: the operating frequency of described semiconductor laser power supply is 1 ~ 500Hz, pulsewidth is adjustable at 50 μ s-1000 μ s, and electric current is at 0-10A, and duty ratio is less than 50%.
10. semiconductor laser end pumping Er:YSGG electro-optical Q-switching laser according to claim 1, it is characterized in that: the parameter of described controller to semiconductor laser power supply arranges and control, and produce synchronization pulse and adjust Q high-pressure modular to trigger to moving back pressure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107482425A (en) * | 2017-10-16 | 2017-12-15 | 中国科学院合肥物质科学研究院 | A kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79um laser pumping source |
| CN112350147A (en) * | 2020-11-06 | 2021-02-09 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
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| US20100118389A1 (en) * | 2008-11-12 | 2010-05-13 | Joerg Sophus Heinrich | Ultrafast alexandrite laser amplifier using diode laser sources |
| CN201528122U (en) * | 2009-11-06 | 2010-07-14 | 山东大学 | Q-switched laser of electro-optical lanthanum gallium silicate single crystal |
| CN203387045U (en) * | 2013-06-09 | 2014-01-08 | 中国电子科技集团公司第十一研究所 | Optical fiber end-pumped laser |
| CN104393478A (en) * | 2014-11-22 | 2015-03-04 | 中国科学院合肥物质科学研究院 | Medical electro-optical Q-switch laser with 2.79 micrometers |
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| CN1829011A (en) * | 2006-04-12 | 2006-09-06 | 中国科学院上海光学精密机械研究所 | Thermal depolarization compensation resonant cavity of high power E-O Q-switch solid laser |
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| CN112350147A (en) * | 2020-11-06 | 2021-02-09 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
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