CN102946043B - Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser - Google Patents
Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser Download PDFInfo
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- CN102946043B CN102946043B CN201210475871.XA CN201210475871A CN102946043B CN 102946043 B CN102946043 B CN 102946043B CN 201210475871 A CN201210475871 A CN 201210475871A CN 102946043 B CN102946043 B CN 102946043B
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Abstract
The present invention provides electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser.The laser includes laser crystal Nd:YAG, resonant cavity, LGS crystal assemblies, laser pump (ing) system, high-tension pulse reconstitute Q power supplys composition, and laser pump (ing) system is made of two identical semiconductor pumping sources and pulse laser power supply, and resonant cavity is made of total reflective mirror, polarizing film, LGS crystal assemblies and outgoing mirror.The laser overcomes existing high recurrent frequency pulse laser device since thermal birefringence effect seriously causes laser power to reduce the defect of beam degradation, obtains compact-sized high quality high-power high-repetition-freqpulse pulse laser.
Description
Technical field
It is especially a kind of using barium silicate (La the present invention relates to a kind of Q-switch solid laser3Ga5SiO4, abbreviation LGS)
The Q-switched laser compensated as electrooptical switching and optically-active.
Background technology
The solid state laser (DPSSL) of laser diode (LD) pumping is tight with its high conversion efficiency, good beam quality, structure
It gathers, the advantages that operation and maintenance facilitates has obtained the extensive concern of people.Especially high-repetition-rate narrow spaces solid state laser,
The fields such as laser radar, space communication, laser ranging and Laser focus suffer from highly important application.Usually, it obtains
Obtain high-repetition-rate, the high efficiency solid state laser of narrow spaces nanosecond order pulsed laser output mainly uses passive switch saturable
Absorber, such as Cr4+:As tune element battle array, repetition rate representative value is kHz to hundred for YAG crystal or acousto-optic active switch
KHz.But both switching techniques all exist clearly disadvantageous, i.e., the passive switch of saturable absorber can obtain narrow arteries and veins
Punching, but its output stability is poor, and single pulse energy is relatively low, it is difficult to realize that precise synchronization exports.Belong to the acousto-optic of actively modulation
Switch, although having well solved stationary problem, its switching speed is slower, and the pulse of gained is larger, and representative value is several
Ten nanoseconds to nanoseconds up to a hundred.And electrooptical switching made of the electrooptic effect of nonlinear crystal is utilized, not only there is very strong close to lead to
Ability, and response speed reaches nanosecond even magnitude of subnanosecond, is readily available 10ns stable pulse outputs below.Tradition
KD*P, LN and ktp crystal make due to being restricted by factors such as the conductivity value of itself, electro-optic coefficient, piezoelectricity toroidal effects
At the repetition rate of switch be difficult to effectively improve.With new type electro crystal RTP (RbTiOPO4), BBO (β-BaB2O) and
The appearance of LGS (La3Ga5SiO4), the repetition rate of electrooptical switching are greatly improved, and realize several hertz to hundred kHz
The all standing of range.Special LGS is a kind of active electro-optic crystal of novel tool, is vibrated back and forth in resonant cavity using laser
Principle and gyrotropi crystal in wave vector reversed turning plane of polarization rotate angle move be zero this characteristic, while using its laterally electricity
Luminous effect has been achieved with its application as electro-optic crystal in high power pulse Q-switched laser.But laser is repeated in height
Under frequency condition, since its temperature and stress changes make laser crystal variations in refractive index, cause to generate thermal lensing effect and heat
Birefringence is caused, the distortion of laser pulse is caused to reduce laser beam quality and laser power.It is common thermotropic both at home and abroad at present
Birefringence-compensated method is 90 degree of gyrotropi crystals of insertion among two laser crystals.But such method not only additionally introduce it is slotting
Enter to be lost and so that cavity configuration is complicated.
Invention content
Patent of the present invention in view of the deficiencies of the prior art, provides a kind of electric-optically Q-switched and optically-active thermal effect compensation complex function
Callium-lanthanum silicate crystal Q-switched laser overcomes existing high recurrent frequency pulse laser device since thermal birefringence effect seriously leads to laser
Power reduces the defect of beam degradation, obtains compact-sized high quality high power Gao Zhongying Q-switched laser.
A kind of electric-optically Q-switched and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser, including：Laser is brilliant
Body Nd:YAG, resonant cavity, laser pump (ing) system and high-tension pulse reconstitute Q power supplys, and the laser pump (ing) system is by two identical half
Conductor pump module forms, and each semiconductor pumping module is made of semiconductor pumping sources and pulse laser power supply；
The resonant cavity is made of total reflective mirror, polarizing film, callium-lanthanum silicate crystal component and the outgoing mirror set gradually；Its
In, the callium-lanthanum silicate crystal component is positioned between described two identical semiconductor pumping modules；The barium silicate is brilliant
Body component is two pieces of concatenated callium-lanthanum silicate crystals, wherein every piece of callium-lanthanum silicate crystal X-direction is electric field compression aspect, Z-direction
For clearance direction；One of callium-lanthanum silicate crystal adds high pressure in X-direction, and shutdown voltage is adjustable with the size of crystal aspect ratio；
The laser crystal Nd:YAG is two identical two-lings of size, i.e. first laser bar and second
Laser bar, first laser bar and second laser bar are respectively placed in the both sides of the callium-lanthanum silicate crystal component, first
The pattern radially polarized in a laser bar, the pattern tangentially polarized in second laser bar；
When pumping starts, pulse laser power supply triggers high pressure mode, and λ/4 of direct current are added to one piece of callium-lanthanum silicate crystal
Voltage realizes the shutdown of resonant cavity；Delay time is adjusted, energy level population is made to run up to maximum, moment returns voltage, real
The door opening state of existing resonant cavity generates pulse laser output.
Further, the callium-lanthanum silicate crystal that every piece of callium-lanthanum silicate crystal is 41mm long.
Further, every piece of callium-lanthanum silicate crystal both ends of the surface are coated with anti-reflection film, pressing surfaces gold-plated electrode.
Further, the resonant cavity uses plano-concave cavity configuration.
Optical activity refer to single color plane polarised light along optical axis direction by crystal after, plane of polarization can rotate, rotation
Angle it is directly proportional to the thickness of chip.LGS crystal has optical activity, and under wavelength 1064nm incident lights, LGS specific rotatory powers are
1.1°/mm.This patent uses the LGS crystal of two pieces of 8*8*41mm, both ends of the surface to be coated with anti-reflection film, and crystal X-direction is electric field
Compression aspect, Z-direction are clearance direction, pressing surfaces gold-plated electrode.LGS crystal is placed among two laser pump cavities so that
Each component of laser beam electric field is rotated by 90 °.The pattern radially polarized in first laser bar, in second laser
Tangential polarization is reformed into stick, each of light beam part is by identical region in two laser bars, so in a stick
The sluggishness of generation is offset by another stick.Using this technology, the birefringence-compensated of laser may be implemented.Simultaneously in LGS crystalline substances
Realize that shutdown acts on by applying 1/4 wave voltage of direct current on body, moment returns the enabling that voltage realizes laser resonator, generates
Pulse laser exports.
Laser structure is described in conjunction with attached drawing 1.Entire laser is mainly by laser gain medium, LGS crystal assemblies, laser
Pumping system forms.Laser gain medium is Nd:YAG crystal.Two crystal are two-ling, size doping concentration complete one
It causes.Each end face is coated with 1064nm anti-reflection films.Laser pump (ing) system is made of two semiconductor pumping sources and pulse laser power supply,
Repetition rate 10Hz-1KHz is adjustable.LGS crystal assemblies reconstitute Q power supplys with high-tension pulse, and polarizing film collectively constitutes barium silicate electric light
Crystal Q-switched laser.Gyrotropi crystal is placed in series by two pieces between two semiconductor pumping modules, and length is respectively 41mm's
LGS crystal forms, and the end face of crystal is coated with 1064nm anti-reflection films.One of LGS crystal adds high pressure in the directions x, electricity of closing the door
Pressure is adjustable with the size of crystal aspect ratio, is not necessarily to damp-proof device.By adjusting the electricity being applied on LGS crystal electro-optic Q switchs
Pressure and rotation LGS crystal electro-optic Q switchs, it is zero (shutdown state) to make laser output energy.Moment returns voltage, by inclined
Shake device linearly polarized light by LGS crystal after, plane of polarization has turned over angle, φ, through laser cavity total reflective mirror reflection after,
Plane of polarization has turned over angle-Φ.Since light beam passes twice through LGS crystal back and forth, make the plane of polarization rotation generated by crystal optical activity
Gyration is 0, realizes the enabling of laser resonator, generates pulse laser output, pressure type LGS crystal electric light tune is moved back to realize
The operating of Q-switch laser.Resonant cavity uses plano-concave cavity configuration, and lumen type is stablized compact.
Description of the drawings
Attached drawing is this laser structure schematic diagram, wherein 1 is laser crystal Nd:YAG, 2 be semiconductor pumped chamber, and 3 be pump
Pu power supply, 4 be electron-optical Q-switch circuits, and 5 be LGS crystal, and 6 be polarizing film, and 7 be outgoing mirror, and 8 be total reflective mirror.
Specific implementation mode
Nd in attached drawing:1 size of YAG sticks crystal is 3mm × 68mm, and Nd3+ doping concentrations 0.8%, it is saturating that 1064nm high is plated in end face
Deielectric-coating；Semiconductor pumped 2 are used as profile pump, and repetition 10Hz-1KHz is adjustable, pulsewidth 200us, using water circulating cooling,
Operating temperature is controlled at 25 DEG C ± 1 DEG C；Using flat-curved cavity, 8 be concave mirror, curvature R=1.5m, plating for experiment
1064nm high-reflecting films；7 be outgoing mirror, transmitance 40%；5LGS is as electric light and gyrotropi crystal, every piece of Z-direction length l=41mm, X
Direction width ω=8mm, Y-direction width d=8mm, cross electro-optical effect, X-direction added electric field, Z-direction thang-kng.Q-switch controls
It is about 3000~4000V adjustable that circuit 4, which generates,.When pumping starts, high-pressure modular is triggered by pump supply source, gives electro-optic crystal LGS
The voltages of λ/4 of direct current are added to realize the shutdown of chamber；Delay time is adjusted, so that energy level population is run up to maximum, moment is returned
Voltage realizes the door opening state of laser resonator, generates pulse laser output.When using moving back pressure type working method, needed for intracavitary
Component is few, and a high-voltage power module works independently, and only the time of the accumulation of inverted population need to be adjusted, operation letter
It is single, it is cost-effective.
Claims (4)
1. a kind of electric-optically Q-switched and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser, including：Laser crystal
Nd:YAG (1), resonant cavity, laser pump (ing) system and high-tension pulse reconstitute Q power supplys (4), it is characterised in that：The laser pump (ing) system
It is made of two identical semiconductor pumping modules, each semiconductor pumping module is by semiconductor pumping sources (2) and pulse laser
Power supply (3) forms；
The resonant cavity is by the total reflective mirror (8), polarizing film (6), callium-lanthanum silicate crystal component (5) and the outgoing mirror (7) that set gradually
Composition；Wherein, the callium-lanthanum silicate crystal component (5) is positioned between described two identical semiconductor pumping modules；It is described
Callium-lanthanum silicate crystal component (5) is two pieces of concatenated callium-lanthanum silicate crystals, wherein every piece of callium-lanthanum silicate crystal X-direction is electric field
Compression aspect, Z-direction are clearance direction；One of callium-lanthanum silicate crystal adds high pressure in X-direction, shutdown voltage with crystal in length and breadth
The size of ratio is adjustable；
The laser crystal Nd:YAG (1) is two identical two-lings of size, i.e. first laser bar and second
Laser bar, first laser bar and second laser bar are respectively placed in the both sides of the callium-lanthanum silicate crystal component (5),
The pattern radially polarized in one laser bar, the pattern tangentially polarized in second laser bar；
When pumping starts, pulse laser power supply (3) triggers high pressure mode, and λ/4 of direct current are added to one piece of callium-lanthanum silicate crystal
Voltage realizes the shutdown of resonant cavity；Delay time is adjusted, energy level population is made to run up to maximum, moment returns voltage, real
The door opening state of existing resonant cavity generates pulse laser output.
2. callium-lanthanum silicate crystal Q-switched laser as described in claim 1, it is characterised in that：Every piece of callium-lanthanum silicate crystal is
The callium-lanthanum silicate crystal of 41mm long.
3. callium-lanthanum silicate crystal Q-switched laser as described in claim 1, it is characterised in that：Every piece of callium-lanthanum silicate crystal both ends
Face is coated with anti-reflection film, pressing surfaces gold-plated electrode.
4. callium-lanthanum silicate crystal Q-switched laser as described in claim 1, it is characterised in that：The resonant cavity uses flat-concave cavity
Structure.
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| CN201210475871.XA CN102946043B (en) | 2012-11-22 | 2012-11-22 | Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser |
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| CN201210475871.XA CN102946043B (en) | 2012-11-22 | 2012-11-22 | Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser |
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| CN102946043B true CN102946043B (en) | 2018-09-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103259182B (en) * | 2013-04-26 | 2014-06-18 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
| CN111224311A (en) * | 2019-11-21 | 2020-06-02 | 中国航空制造技术研究院 | Hundred-nanosecond-level fast-switching dual-wavelength Raman laser |
| CN113314934B (en) * | 2021-05-22 | 2022-06-24 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
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| EP0865156A2 (en) * | 1997-03-14 | 1998-09-16 | Ngk Insulators, Ltd. | Surface acoustic wave device comprising langasite single crystal substrate |
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| CN1825721A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院福建物质结构研究所 | High-power high-quality solid laser |
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| CN201528122U (en) * | 2009-11-06 | 2010-07-14 | 山东大学 | Q-switched laser of electro-optical lanthanum gallium silicate single crystal |
| CN101882749A (en) * | 2009-05-08 | 2010-11-10 | 中国科学院安徽光学精密机械研究所 | Pressurized modulate-Q electro-optical switch for laser |
| CN102035126A (en) * | 2010-11-10 | 2011-04-27 | 中国科学院力学研究所 | All-solid-state laser for laser texturing of metal |
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| EP0865156A2 (en) * | 1997-03-14 | 1998-09-16 | Ngk Insulators, Ltd. | Surface acoustic wave device comprising langasite single crystal substrate |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
| CN1825721A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院福建物质结构研究所 | High-power high-quality solid laser |
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