CN102946043B - Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser - Google Patents
Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 80
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 32
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 230000000694 effects Effects 0.000 title claims abstract description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 31
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000005086 pumping Methods 0.000 claims abstract description 14
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052737 gold Inorganic materials 0.000 claims description 3
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Abstract
本发明提供电光及旋光热效应补偿复合功能硅酸镓镧晶体调Q激光器。该激光器包括激光晶体Nd:YAG，谐振腔、LGS晶体组件，激光泵浦系统,高压脉冲调Q电源组成，激光泵浦系统由两个相同的半导体泵浦源和脉冲激光电源组成，谐振腔由全反镜、偏振片、LGS晶体组件和输出镜组成。该激光器克服现有高重频脉冲激光器由于热致双折射效应严重导致激光功率降低光束恶化的缺陷，得到结构紧凑高质量高功率高重频脉冲激光器。
The invention provides a Q-switched laser with electro-optic and optical thermal effect compensation composite function gallium lanthanum silicate crystal. The laser consists of laser crystal Nd:YAG, resonant cavity, LGS crystal components, laser pumping system, and high-voltage pulse Q-switched power supply. The laser pumping system consists of two identical semiconductor pumping sources and pulsed laser power supply. The resonant cavity consists of It is composed of total reflection mirror, polarizer, LGS crystal assembly and output mirror. The laser overcomes the defects of existing high-repetition-frequency pulse lasers due to severe thermal-induced birefringence effects that cause laser power reduction and beam deterioration, and obtains a compact, high-quality, high-power, high-repetition-frequency pulse laser.
Description
技术领域technical field
本发明涉及一种调Q固体激光器，特别是一种采用硅酸镓镧(La3Ga5SiO4，简称LGS)作为电光开关和旋光补偿的调Q激光器。The invention relates to a Q-switched solid-state laser, in particular to a Q-switched laser using lanthanum gallium silicate (La 3 Ga 5 SiO 4 , LGS for short) as an electro-optical switch and optical rotation compensation.
背景技术Background technique
激光二极管(LD)抽运的固体激光器(DPSSL)以其转换效率高、光束质量好、结构紧凑、使用和维护方便等优点得到了人们的广泛关注。尤其是高重复率窄脉宽固体激光器,在激光雷达、空间通信、激光测距以及激光精细加工等领域都有着十分重要的应用。通常,获得高重复率、窄脉宽纳秒量级激光脉冲输出的高效率固体激光器主要采用被动开关可饱和吸收体,如Cr4+:YAG晶体或声光主动开关作为调元件阵,其重复频率典型值为千赫兹到百千赫兹。但这两种开关技术都存在明显的不足,即可饱和吸收体的被动开关可以获得窄脉冲,但其输出稳定性差,且单脉冲能量较低,难以实现精确同步输出。属于主动调制的声光开关,尽管很好地解决了同步问题,但其开关速度较慢,所得的脉冲脉宽较大,典型值在几十纳秒到上百纳秒。而利用非线性晶体的电光效应制成的电光开关,不但具有很强的关通能力,而且响应速度达到纳秒甚至亚纳秒量级,很容易获得10ns以下的稳定脉冲输出。传统的KD*P、LN和KTP晶体,由于受其本身的电导率值、电光系数、压电环效应等因素的制约,制成的开关的重复频率难以有效提高。随着新型电光晶体RTP(RbTiOPO4),BBO(β-BaB2O)和LGS(La3Ga5SiO4)的出现,电光开关的重复频率得到极大的提升,实现了几赫兹到百千赫兹范围的全覆盖。特别LGS是一种新型具有旋光性的电光晶体，利用激光在谐振腔中来回振荡的原理和旋光晶体中波矢量反向回转偏振面旋转的角移为零这一特性,同时利用其横向电光效应,已实现了其作为电光晶体在高功率脉冲调Q激光器中的应用。但是激光器在高重复频率条件下，由于其温度及应力改变使得激光晶体折射率变化，导致产生热透镜效应和热致双折射，引起激光脉冲的畸变降低了激光光束质量及激光功率。目前国内外常用的热致双折射补偿方法是在两个激光晶体中间插入90度旋光晶体。但是此类办法不仅额外引入插入损耗并且使得腔结构复杂。Laser diode (LD)-pumped solid-state lasers (DPSSL) have attracted widespread attention due to their high conversion efficiency, good beam quality, compact structure, and easy use and maintenance. In particular, high repetition rate and narrow pulse width solid-state lasers have very important applications in the fields of laser radar, space communication, laser ranging and laser fine processing. Generally, high-efficiency solid-state lasers that obtain high repetition rate and narrow pulse width nanosecond laser pulse output mainly use passive switchable saturable absorbers, such as Cr4+:YAG crystals or acousto-optic active switches as tuning element arrays, and their repetition rates are typically Values are kilohertz to hundreds of kilohertz. However, these two switching techniques have obvious shortcomings, that is, passive switching of saturable absorbers can obtain narrow pulses, but its output stability is poor, and the single pulse energy is low, so it is difficult to achieve accurate synchronous output. The acousto-optic switch belongs to the active modulation, although it solves the synchronization problem well, its switching speed is slow, and the pulse width obtained is relatively large, the typical value is tens of nanoseconds to hundreds of nanoseconds. The electro-optic switch made of the electro-optic effect of nonlinear crystal not only has a strong ability to turn on and off, but also has a response speed of nanosecond or even sub-nanosecond level, and it is easy to obtain a stable pulse output below 10ns. Traditional KD*P, LN and KTP crystals are restricted by their own conductivity value, electro-optical coefficient, piezoelectric ring effect and other factors, so it is difficult to effectively increase the repetition rate of the switch. With the emergence of new electro-optic crystals RTP (RbTiOPO4), BBO (β-BaB2O) and LGS (La3Ga5SiO4), the repetition rate of electro-optic switches has been greatly improved, achieving full coverage in the range from a few Hz to hundreds of kilohertz. In particular, LGS is a new type of electro-optic crystal with optical activity. It utilizes the principle of laser oscillating back and forth in the resonator and the characteristic that the angle shift of the wave vector reversely rotates the polarization plane in the optical rotation crystal is zero. At the same time, it uses its transverse electro-optic effect. , has realized its application as an electro-optic crystal in high-power pulsed Q-switched lasers. However, under the condition of high repetition rate, the refractive index of the laser crystal changes due to the change of temperature and stress, resulting in thermal lens effect and thermally induced birefringence, which causes the distortion of the laser pulse and reduces the quality of the laser beam and the laser power. At present, the thermally induced birefringence compensation method commonly used at home and abroad is to insert a 90-degree optical rotation crystal between two laser crystals. However, such methods not only introduce additional insertion loss but also complicate the cavity structure.
发明内容Contents of the invention
本发明专利针对现有技术的不足，提供一种电光调Q及旋光热效应补偿复合功能硅酸镓镧晶体调Q激光器，克服现有高重频脉冲激光器由于热致双折射效应严重导致激光功率降低光束恶化的缺陷，得到结构紧凑高质量高功率高重频调Q激光器。Aiming at the deficiencies of the existing technology, the patent of the present invention provides an electro-optic Q-switching and optical rotation thermal effect compensation compound function gallium lanthanum silicate crystal Q-switching laser, which overcomes the laser power reduction caused by the severe thermal birefringence effect of the existing high repetition frequency pulse laser Due to the defect of beam deterioration, a Q-switched laser with compact structure, high quality, high power and high repetition frequency is obtained.
一种电光调Q及旋光热效应补偿复合功能硅酸镓镧晶体调Q激光器，包括：激光晶体Nd:YAG、谐振腔、激光泵浦系统和高压脉冲调Q电源，所述激光泵浦系统由两个相同的半导体泵浦模块组成，每个半导体泵浦模块由半导体泵浦源和脉冲激光电源组成；An electro-optic Q-switching and optical thermal effect compensation compound function gallium lanthanum silicate crystal Q-switching laser, including: laser crystal Nd:YAG, resonant cavity, laser pumping system and high-voltage pulse Q-switching power supply, the laser pumping system consists of two Each semiconductor pump module consists of a semiconductor pump source and a pulsed laser power supply;
所述谐振腔由依次设置的全反镜、偏振片、硅酸镓镧晶体组件和输出镜组成；其中，所述硅酸镓镧晶体组件放置于所述两个相同的半导体泵浦模块之间；所述硅酸镓镧晶体组件为两块串联的硅酸镓镧晶体，其中，每块硅酸镓镧晶体X方向为电场加压方向，Z方向为通关方向；其中一块硅酸镓镧晶体在X方向加高压，关门电压随晶体纵横比的大小可调；The resonant cavity is composed of a total reflection mirror, a polarizer, a gallium lanthanum silicate crystal component and an output mirror arranged in sequence; wherein, the gallium lanthanum silicate crystal component is placed between the two identical semiconductor pump modules The gallium lanthanum silicate crystal assembly is two gallium lanthanum silicate crystals connected in series, wherein the X direction of each gallium lanthanum silicate crystal is the electric field pressurization direction, and the Z direction is the clearance direction; one of the gallium lanthanum silicate crystals Apply high voltage in the X direction, and the gate-off voltage can be adjusted with the aspect ratio of the crystal;
所述激光晶体Nd:YAG为两根尺寸完全相同的孪生晶体，即第一个激光棒和第二个激光棒，第一个激光棒和第二个激光棒分别放置于所述硅酸镓镧晶体组件的两边，在第一个激光棒中成径向偏振的模式，在第二个激光棒中成切向偏振的模式；The laser crystal Nd:YAG is two twin crystals with exactly the same size, that is, the first laser rod and the second laser rod, and the first laser rod and the second laser rod are respectively placed on the lanthanum gallium silicate Both sides of the crystal assembly are radially polarized in the first laser bar and tangentially polarized in the second laser bar;
泵浦开始时，脉冲激光电源触发高压模式，给所述一块硅酸镓镧晶体加直流的λ/4电压来实现谐振腔的关断；调节延时时间，使上能级粒子数积累到最大，瞬间退掉电压，实现谐振腔的开门状态，产生脉冲激光输出。When the pump starts, the pulsed laser power supply triggers the high-voltage mode, and a DC λ/4 voltage is applied to the piece of gallium lanthanum silicate crystal to realize the shutdown of the resonant cavity; the delay time is adjusted to maximize the number of upper-level particles , Instantly drop the voltage to realize the open state of the resonant cavity and generate pulsed laser output.
进一步地，每块硅酸镓镧晶体为41mm长的硅酸镓镧晶体。Further, each lanthanum gallium silicate crystal is a 41 mm long lanthanum gallium silicate crystal.
进一步地，每块硅酸镓镧晶体两端面均镀有增透膜，加压表面镀金电极。Further, both ends of each gallium lanthanum silicate crystal are coated with an anti-reflection film, and the pressure surface is coated with gold electrodes.
进一步地，所述谐振腔采用平凹腔结构。Further, the resonant cavity adopts a flat concave cavity structure.
旋光性是指单色平面偏振光沿光轴方向通过晶体后,其偏振面会发生转动,转动的角度与晶片的厚度成正比。LGS晶体具有旋光性，在波长1064nm入射光下，LGS旋光率为1.1°/mm。本专利采用两块8*8*41mm的LGS晶体，其两端面均镀有增透膜，晶体X方向为电场加压方向，Z方向为通关方向，加压表面镀金电极。LGS晶体置于两个激光泵浦腔中间，使得激光束电场的每个分量都旋转90度。在第一个激光棒中成径向偏振的模式，在第二个激光棒中就变成切向偏振，光束的每个部分都通过两个激光棒中相同的区域，所以在一个棒中产生的迟滞被另一个棒抵消。利用这种技术，可以实现激光器的双折射补偿。同时在LGS晶体上通过施加直流1/4波电压来实现关门作用,瞬间退掉电压实现激光谐振腔的开门,产生脉冲激光输出。Optical rotation means that after monochromatic plane polarized light passes through the crystal along the optical axis, its polarization plane will rotate, and the rotation angle is proportional to the thickness of the crystal. LGS crystals have optical activity, and the optical rotation rate of LGS is 1.1°/mm under incident light with a wavelength of 1064nm. This patent uses two 8*8*41mm LGS crystals, both ends of which are coated with anti-reflection coatings, the X direction of the crystal is the direction of electric field pressure, the Z direction is the direction of customs clearance, and the surface of the pressure is plated with gold electrodes. The LGS crystal is placed between the two laser-pumped cavities so that each component of the laser beam's electric field is rotated by 90 degrees. The mode that is radially polarized in the first laser bar becomes tangentially polarized in the second laser bar, and each part of the beam passes through the same area in both laser bars, so that in one bar a The hysteresis is offset by another rod. Using this technique, birefringence compensation of lasers can be achieved. At the same time, by applying a DC 1/4 wave voltage to the LGS crystal to realize the closing effect, the voltage is withdrawn instantaneously to realize the opening of the laser resonator and generate pulsed laser output.
结合附图1描述激光器结构。整个激光器主要由激光增益介质，LGS晶体组件，激光泵浦系统组成。激光增益介质为Nd:YAG晶体。两根晶体为孪生晶体，尺寸掺杂浓度完全一致。各端面均镀有1064nm增透膜。激光泵浦系统由两个半导体泵浦源和脉冲激光电源组成，重复频率10Hz-1KHz可调。LGS晶体组件与高压脉冲调Q电源，偏振片共同组成硅酸镓镧电光晶体调Q激光器。旋光晶体由两块串联放置于两个半导体泵浦模块之间，长度分别为41mm的LGS晶体组成，晶体的端面均镀有1064nm增透膜。其中一块LGS晶体在x方向加高压，关门电压随晶体纵横比的大小可调,无需防潮装置。通过调整施加于LGS晶体电光调Q开关上的电压和转动LGS晶体电光调Q开关,使激光器输出能量为零(关门状态)。瞬间退掉电压,经过偏振器的平面偏振光通过LGS晶体后,其偏振面转过了角度Φ,经激光腔的全反镜反射后,其偏振面转过了角度-Φ。由于光束来回两次通过LGS晶体,使因晶体旋光性产生的偏振面旋转角度为0,实现激光谐振腔的开门,产生脉冲激光输出,从而实现了退压式LGS晶体电光调Q开关激光器的运转。谐振腔采用平凹腔结构，腔型稳定紧凑。The structure of the laser is described in conjunction with Fig. 1 . The whole laser is mainly composed of laser gain medium, LGS crystal components, and laser pumping system. The laser gain medium is Nd:YAG crystal. The two crystals are twin crystals with exactly the same size and doping concentration. Each end face is coated with a 1064nm AR coating. The laser pumping system consists of two semiconductor pumping sources and a pulsed laser power supply, and the repetition frequency is adjustable from 10Hz to 1KHz. LGS crystal components, high-voltage pulse Q-switched power supply, and polarizers together form a Q-switched laser of gallium lanthanum silicate electro-optic crystal. The optically active crystal is composed of two LGS crystals with a length of 41mm placed in series between two semiconductor pump modules. The end faces of the crystals are coated with 1064nm antireflection coating. One of the LGS crystals is applied with a high voltage in the x direction, and the gate-off voltage is adjustable with the aspect ratio of the crystal, and no moisture-proof device is required. By adjusting the voltage applied to the electro-optic Q-switching switch of the LGS crystal and turning the electro-optic Q-switching switch of the LGS crystal, the output energy of the laser is zero (closed state). When the voltage is dropped instantly, the plane polarized light passing through the polarizer passes through the LGS crystal, and its polarization plane turns through the angle Φ, and after being reflected by the total reflection mirror of the laser cavity, its polarization plane turns through the angle -Φ. Since the light beam passes through the LGS crystal twice back and forth, the rotation angle of the polarization plane due to the optical rotation of the crystal is 0, and the laser resonator is opened to generate pulsed laser output, thereby realizing the operation of the back-pressure LGS crystal electro-optic Q-switched switch laser. . The resonant cavity adopts a flat concave cavity structure, and the cavity shape is stable and compact.
附图说明Description of drawings
附图为本激光器结构示意图，其中1为激光晶体Nd:YAG，2为半导体泵浦腔，3为泵浦电源，4为电光Q开关电路，5为LGS晶体，6为偏振片，7为输出镜，8为全反镜。The accompanying drawing is a schematic diagram of the laser structure, in which 1 is the laser crystal Nd:YAG, 2 is the semiconductor pump cavity, 3 is the pump power supply, 4 is the electro-optic Q switch circuit, 5 is the LGS crystal, 6 is the polarizer, and 7 is the output Mirror, 8 is a total reflection mirror.
具体实施方式Detailed ways
附图中Nd:YAG棒晶体1尺寸为3mm×68mm,Nd3+掺杂浓度0.8％,端面镀1064nm高透的介质膜；半导体泵浦2作为侧面泵浦,重频10Hz-1KHz可调，脉宽200us，使用水循环冷却，工作温度控制在25℃±1℃；实验采用平-凹腔结构，8为凹面全反镜，曲率R＝1.5m，镀1064nm高反膜；7为输出镜，透过率40％；5LGS作为电光及旋光晶体，每块Z向长度l＝41mm，X方向宽度ω＝8mm，Y方向宽度d＝8mm，横向电光效应，X方向加电场，Z方向通光。Q开关控制电路4产生约为3000～4000V可调。泵浦开始时，由泵浦电源触发高压模块，给电光晶体LGS加直流的λ/4电压来实现腔的关断；调节延时时间，使上能级粒子数积累到最大，瞬间退掉电压，实现激光谐振腔的开门状态，产生脉冲激光输出。使用退压式工作方式时，腔内所需元器件少，一个高压电源模块独立工作，只需对反转粒子数的积累的时间进行调节，操作简单，节约成本。In the accompanying drawings, the Nd:YAG rod crystal 1 has a size of 3mm×68mm, Nd3+ doping concentration of 0.8%, and the end face is coated with a 1064nm high-transparency dielectric film; the semiconductor pump 2 is used as a side pump, and the repetition frequency is adjustable from 10Hz to 1KHz. 200us, using water circulation cooling, the working temperature is controlled at 25°C±1°C; the experiment adopts a flat-concave cavity structure, 8 is a concave full-reflection mirror, the curvature R=1.5m, coated with a 1064nm high-reflection film; 7 is the output mirror, through The rate is 40%; 5LGS is used as an electro-optic and optically active crystal, each block has a Z-direction length of l=41mm, a X-direction width of ω=8mm, and a Y-direction width of d=8mm. Transverse electro-optic effect, an electric field is applied in the X direction, and light passes in the Z direction. The Q switch control circuit 4 generates about 3000-4000V adjustable. When the pump starts, the high-voltage module is triggered by the pump power supply, and a DC λ/4 voltage is applied to the electro-optic crystal LGS to realize the shutdown of the cavity; the delay time is adjusted so that the number of upper-level particles accumulates to the maximum, and the voltage is instantly withdrawn , realize the open state of the laser resonator, and generate pulsed laser output. When using the pressure-reducing working mode, fewer components are required in the cavity, and a high-voltage power supply module works independently, and only needs to adjust the accumulation time of the number of reversed particles, which is easy to operate and saves costs.
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