CN102946043A - Electro-optical and optical rotation thermal effect compensation composite function gallium silicate crystal Q-switched laser - Google Patents
Electro-optical and optical rotation thermal effect compensation composite function gallium silicate crystal Q-switched laser Download PDFInfo
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- CN102946043A CN102946043A CN201210475871XA CN201210475871A CN102946043A CN 102946043 A CN102946043 A CN 102946043A CN 201210475871X A CN201210475871X A CN 201210475871XA CN 201210475871 A CN201210475871 A CN 201210475871A CN 102946043 A CN102946043 A CN 102946043A
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Abstract
The invention provides an electro-optical and optical rotation thermal effect compensation composite function gallium silicate crystal Q-switched laser. The laser comprises a laser crystal Nd: yttrium aluminum garnet (YAG), a resonant cavity, a lanthanum gallium silicate (LGS) crystal component, a laser pump system and a high voltage pulse Q-switched power supply, the laser pump system is composed of two same semiconductor pumping sources and a pulse laser power supply, and the resonant cavity is composed of a totally reflecting mirror, a polarizing film, an LGS crystal component and an output mirror. By means of the electro-optical and optical rotation thermal effect compensation composite function gallium silicate crystal Q-switched laser, the defects that the laser power is severely reduced and light beam is deteriorated caused by a thermal induced birefringence effect in terms of existing high repeat frequency pulse lasers are overcome, and a high repeat frequency pulse laser with compact structure and high quality and power is obtained.
Description
Technical field
The present invention relates to a kind of Q-switch solid laser, particularly a kind of employing silicic acid gallium (La
3ga
5siO
4, be called for short LGS) and as the Q-switched laser of electrooptical switching and optically-active compensation.
Background technology
The advantages such as the solid state laser (DPSSL) of laser diode (LD) pumping is high with its conversion efficiency, good beam quality, compact conformation, operation and maintenance convenience have obtained people's extensive concern.Especially the narrow pulsewidth solid state laser of high-repetition-rate, have very important application in fields such as laser radar, space communication, laser ranging and laser retrofits.Usually, the high efficiency solid state laser that obtains high-repetition-rate, the output of narrow pulsewidth nanosecond order laser pulse mainly adopts the passive switch saturable absorber, as Cr4+:YAG crystal or acousto-optic, initiatively switch is as adjusting the element battle array, and its repetition rate representative value is that KHz is to hundred KHz.But all there is obvious deficiency in these two kinds of switching techniques, and the passive switch of saturable absorber can obtain burst pulse, but its output stability is poor, and single pulse energy is lower, be difficult to realize precise synchronization output.Belong to the initiatively acoustooptic switch of modulation, although solved well stationary problem, its switching speed is slower, and the pulse of gained is larger, and representative value is in tens nanoseconds to nanoseconds up to a hundred.And the electrooptical switching that the electro optic effect of utilizing nonlinear crystal is made not only has the logical ability in very strong pass, and response speed reaches nanosecond magnitude of subnanosecond even, is easy to obtain the following stable pulse output of 10ns.Traditional KD*P, LN and ktp crystal, due to the restriction of the factors such as the conductivity value that is subject to itself, electro-optic coefficient, piezoelectric ring effect, the repetition rate of the switch of making is difficult to effective raising.Along with new type electro crystal RTP (RbTiOPO4), the appearance of BBO (β-BaB2O) and LGS (La3Ga5SiO4), the repetition rate of electrooptical switching is greatly improved, and has realized several hertz of all standings to hundred kilohertz range.Special LGS is a kind of novel electrooptic crystal with optical activity, it is zero this characteristic that the angle that in the principle of utilizing laser to vibrate back and forth in resonant cavity and gyrotropi crystal, wave vector reversed turning plane of polarization rotates is moved, utilize its cross electro-optical effect simultaneously, realized its application in the high power pulse Q-switched laser as electrooptic crystal.But laser, under the high repetition frequency condition, because its temperature and stress changes make the laser crystal variations in refractive index, causes producing thermal lensing effect and thermally induced birefringence, causes that the distortion of laser pulse has reduced laser beam quality and laser power.Thermally induced birefringence compensation method commonly used both at home and abroad at present is to insert 90 degree gyrotropi crystals in the middle of two laser crystals.But this type of way is not only additionally introduced insertion loss and is made the cavity configuration complexity.
Summary of the invention
Patent of the present invention is for the deficiencies in the prior art, a kind of electric-optically Q-switched and optically-active thermal effect compensation complex function silicic acid gallium crystal Q-switched laser is provided, overcome existing high recurrent frequency pulse laser device and reduce because thermal birefringence effect seriously causes laser power the defect that light beam worsens, obtain the high repetition Q-switched laser of compact conformation high-quality high power.
After optical activity refers to that monochromatic linearly polarized light passes through crystal along optical axis direction, its plane of polarization can rotate, and the angle of rotation is directly proportional to the thickness of wafer.The LGS crystal has optical activity, and under wavelength 1064nm incident light, the LGS specific rotatory power is 1.1
./mm。This patent adopts the LGS crystal of two 8*8*41mm, and its both ends of the surface all are coated with anti-reflection film, and the crystal directions X is the electric field compression aspect, and the Z direction is the direction of being open to the custom, the pressing surfaces gold-plated electrode.The LGS crystal is placed in the middle of two laser pump cavities, makes each component 90-degree rotation of laser beam electric field.Become the pattern of radial polarisation in first laser bar, in second laser bar, just become tangential polarization, each part of light beam is by identical zone in two laser bars, so the sluggishness produced in a rod is offset by another rod.Utilize this technology, can realize the birefringence-compensated of laser.Realize closing gate action by applying direct current 1/ 4 wave voltages on the LGS crystal, moment is returned voltage and realizes opening the door of laserresonator, produces pulse laser output simultaneously.
1 laser structure is described by reference to the accompanying drawings.Whole laser is mainly by gain medium, the LGS crystal assembly, and the laser pumping system forms.Gain medium is the Nd:YAG crystal.Two crystal are two-ling, and the size doping content is in full accord.Each end face all is coated with the 1064nm anti-reflection film.The laser pumping system is comprised of two semiconductor pumping sources and pulse laser power supply, and repetition rate 10Hz-1KHz is adjustable.LGS crystal assembly and high-tension pulse reconstitute the Q power supply, and polarizer forms Q-switched laser of electro-optical lanthanum gallium silicate single crystal jointly.Gyrotropi crystal is positioned between two semiconductor pumping modules by two series connection, and length is respectively the LGS crystal composition of 41mm, and the end face of crystal all is coated with the 1064nm anti-reflection film.Wherein a LGS crystal adds high pressure in the x direction, and the pass gate voltage is adjustable with the size of crystal aspect ratio, without damp-proof device.Put on the voltage on LGS crystal electro-optic Q switch and rotate LGS crystal electro-optic Q switch by adjustment, making laser output energy is zero (state of closing the door).Moment is returned voltage, and through the linearly polarized light of polarizer, by after the LGS crystal, its plane of polarization has turned over angle Φ, and after the total reflective mirror reflection of laser cavity, its plane of polarization has turned over angle-Φ.Because light beam passes through the LGS crystal twice back and forth, making the plane of polarization anglec of rotation produced because of the crystal optical activity is 0, realizes opening the door of laserresonator, produces pulse laser output, thereby has realized moving back the running of the electric-optically Q-switched Q-swith laser Q of pressure type LGS crystal.Resonant cavity adopts the flat-concave cavity structure, and the chamber type is stable compact.
The accompanying drawing explanation
Accompanying drawing is this laser structure schematic diagram, and wherein 1 is laser crystal Nd:YAG, and 2 is semiconductor pumped chamber, and 3 is pump supply source, and 4 is electron-optical Q-switch circuits, and 5 is the LGS crystal, and 6 is polarizer, and 7 is outgoing mirror, and 8 is total reflective mirror.
Embodiment
In accompanying drawing, Nd:YAG rod crystal 1 is of a size of 3mm * 68mm, Nd3+ doping content 0.8%, the high saturating deielectric-coating of end face plating 1064nm; Semiconductor pumped 2 as profile pump, and repetition 10Hz-1KHz is adjustable, and pulsewidth 200us is used water circulation cooling, and working temperature is controlled at 25 ℃ ± 1 ℃; Experiment adopts flat-curved cavity, and 8 is concave mirror, curvature R=1.5m, plating 1064nm high-reflecting film; 7 is outgoing mirror, transmitance 40%; 5LGS is as electric light and gyrotropi crystal, every Z-direction length l=41mm, and directions X width ω=8 mm, Y-direction width d=8 mm, cross electro-optical effect, the directions X added electric field, the Z direction is led to light.It is adjustable that 4 generations of Q switching control circuit are about 3000 ~ 4000V.When pumping starts, by pump supply source, trigger high-pressure modular, the λ that adds direct current to electrooptic crystal LGS/4 voltages are realized the shutoff in chamber; Regulate delay time, make energy level population run up to maximum, moment is returned voltage, realizes the door opening state of laserresonator, produces pulse laser output.When the pressure type working method is moved back in use, in chamber, required components and parts are few, and a high-voltage power module works alone, and only need be regulated the time of the accumulation of inverted population, simple to operate, cost-saving.
Claims (4)
1. an electric-optically Q-switched and optically-active thermal effect compensation complex function silicic acid gallium crystal Q-switched laser, comprise laser crystal Nd:YAG, resonant cavity, LGS crystal assembly, the laser pumping system, high-tension pulse reconstitutes the Q power supply and forms, it is characterized in that: the laser pumping system is comprised of two identical semiconductor pumping sources and pulse laser power supply, and resonant cavity is comprised of total reflective mirror, polarizer, LGS crystal assembly and outgoing mirror.
2. silicic acid gallium crystal Q-switched laser as claimed in claim 1 is characterized in that: the LGS crystal series connection long by two 41mm of described LGS crystal assembly is positioned between two semiconductor pumping modules.
3. silicic acid gallium Q-switched laser as claimed in claim 1, it is characterized in that: described laser crystal Nd:YAG is two identical two-lings of size, is positioned over the both sides of LGS crystal assembly.
4. silicic acid gallium Q-switched laser as claimed in claim 1, is characterized in that: between described semiconductor pumping module and total reflective mirror, be provided with the polarizer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210475871.XA CN102946043B (en) | 2012-11-22 | 2012-11-22 | Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser |
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|---|---|---|---|
| CN201210475871.XA CN102946043B (en) | 2012-11-22 | 2012-11-22 | Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser |
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| CN102946043A true CN102946043A (en) | 2013-02-27 |
| CN102946043B CN102946043B (en) | 2018-09-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259182A (en) * | 2013-04-26 | 2013-08-21 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
| CN111224311A (en) * | 2019-11-21 | 2020-06-02 | 中国航空制造技术研究院 | Hundred-nanosecond-level fast-switching dual-wavelength Raman laser |
| CN113314934A (en) * | 2021-05-22 | 2021-08-27 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
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| EP0865156A2 (en) * | 1997-03-14 | 1998-09-16 | Ngk Insulators, Ltd. | Surface acoustic wave device comprising langasite single crystal substrate |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
| CN1825721A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院福建物质结构研究所 | High-power high-quality solid laser |
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| CN201528122U (en) * | 2009-11-06 | 2010-07-14 | 山东大学 | Q-switched laser of electro-optical lanthanum gallium silicate single crystal |
| CN101882749A (en) * | 2009-05-08 | 2010-11-10 | 中国科学院安徽光学精密机械研究所 | Pressurized modulate-Q electro-optical switch for laser |
| CN102035126A (en) * | 2010-11-10 | 2011-04-27 | 中国科学院力学研究所 | All-solid-state laser for laser texturing of metal |
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2012
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| EP0865156A2 (en) * | 1997-03-14 | 1998-09-16 | Ngk Insulators, Ltd. | Surface acoustic wave device comprising langasite single crystal substrate |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103259182A (en) * | 2013-04-26 | 2013-08-21 | 山东大学 | General electro-optical Q-switching switch and Q-switching laser for broadband passing through optical rotation crystal for single or odd times |
| CN111224311A (en) * | 2019-11-21 | 2020-06-02 | 中国航空制造技术研究院 | Hundred-nanosecond-level fast-switching dual-wavelength Raman laser |
| CN113314934A (en) * | 2021-05-22 | 2021-08-27 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
| CN113314934B (en) * | 2021-05-22 | 2022-06-24 | 中国科学院理化技术研究所 | Laser device with continuously adjustable output coupling ratio |
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| CN102946043B (en) | 2018-09-28 |
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