CN203895739U - Device used for generating high-mean-power quasi-continuous pulse green laser - Google Patents
Device used for generating high-mean-power quasi-continuous pulse green laser Download PDFInfo
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- CN203895739U CN203895739U CN201420147964.4U CN201420147964U CN203895739U CN 203895739 U CN203895739 U CN 203895739U CN 201420147964 U CN201420147964 U CN 201420147964U CN 203895739 U CN203895739 U CN 203895739U
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Abstract
Provided is a device used for generating high-mean-power quasi-continuous pulse green laser. The device comprises a concave surface resonant cavity mirror, a laser crystal, a plane turning mirror, a laser Q switch, a coupling output flat mirror, a frequency multiplication crystal, a planar cavity mirror, a pump laser and coupling lens groups. The concave surface resonant cavity mirror is a concave-convex lens with the same curvature and the concave surface faces to the laser crystal and forms a cavity mirror of a laser resonant cavity. The concave surface resonant cavity mirror, the plane turning mirror arranged in an included angle of 45 degrees with an optical axis and the planar cavity mirror form a L-shaped laser resonant cavity. Pump lights emitted from two pump fiber heads are coupled into the laser crystal through two coupling lens groups respectively, and form counter-rotating particle number. The energy accumulated by the counter-rotating particle number is converted into pulse laser oscillation with high repetition rate through the Q switch. The frequency multiplication crystal converts the 1064nm laser formed in the cavity into the 532nm laser, then the laser is coupled out from the laser resonant cavity by the coupling output mirror arranged inclinedly in a certain angle and a required 532nm pulse laser output is obtained. The device can obtain high-mean-power quasi-continuous green pulse laser, and has advantages of high efficiency, high output power and high output spectrographic purity.
Description
Technical field
The utility model relates to a kind of device that can produce the quasi-continuous pulse green laser of high-average power, can be widely used in the fields such as industrial processes, laser display and scientific research.
Background technology
All solid state green (light) laser because its Output of laser wavelength is short, can good condensing performance, single photon energy is high, be suitable for the features such as contactless cold working and micro-processing, have a wide range of applications in fields such as photoetching technique, capillary processing, wafer delineation, microelectronics processing, Atmospheric Survey, photochemistry, Photobiology and medical science.Particularly at electronics pcb board processing and transparent material as the field such as cutting, delineation of toughened glass etc., green laser has application very widely.Laser process equipment requires also more and more higher to the average power of green (light) laser, the most average power of green (light) laser of industrial application has reached 10W.The all solid state green (light) laser of current industrial use, adopts Nd:YVO mostly
4crystal is as gain media, and adopts acoustooptic Q-switching or electro-optical Q-switch to obtain high repetitive frequency pulsed output.In order to obtain higher conversion efficiency, mostly adopt the mode of intracavity frequency doubling, in resonant cavity, place the laser that non-linear frequency-doubling crystal is 532nm by the laser freuqency doubling of 1064nm.
The green (light) laser of commercial Application adopts maximum resonant cavity shapes to have two kinds, line chamber and " V " shape chamber at present.The all elements of line chamber are all arranged point-blank as accompanying drawing 1., and pumping source carries out pumping from one end to laser crystal, and the green laser of acquisition is exported from the other end.The advantage of this laser is simple in structure, be convenient to adjust, but shortcoming is to be difficult to obtain 10W or 532nm Laser output more than 10W.Adopt the green (light) laser in " V " shape chamber in order to obtain green laser output more than 10W, mostly adopt two blocks of laser crystals, two blocks of laser crystals are placed respectively at support arm two ends with " V " shape chamber resonant cavity, adopt semiconductor laser to carry out end pumping, on another arm, place frequency-doubling crystal and obtain 532nm Laser output.These two kinds of resonant cavity shapes are all directly exported the laser of 532nm from a chamber mirror of resonant cavity, easily have the remaining 1064nm outgoing that mixes, and cause 532nm laser spectroscopy composition impure, easily in laser processing procedure, produce unnecessary thermal effect and affect crudy.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned prior art shortcoming, and a kind of device that produces the quasi-continuous pulse green laser of high-average power is provided, and it is high that this laser has efficiency, and power output is high, the advantage that output spectrum purity is high.
Technical solution of the present utility model is as follows:
For generation of a device for the quasi-continuous pulse green laser of high-average power, comprise concave surface resonator mirror, laser crystal, plane turning mirror and laser Q switch, coupling output plane mirror, frequency-doubling crystal, planar cavity mirror, pump laser, coupled lens group; It is characterized in that described concave surface resonator mirror and plane turning mirror and the planar cavity mirror of 45 ° of placements have formed " L " shape laserresonator jointly, the total length of resonant cavity is less than 50cm; Two pump lasers carry out pumping by coupled lens group to laser crystal respectively from the both sides of laser crystal; Laser Q switch forms pulse laser output to resonance intonation Q, and Q switching can be acoustooptic Q-switching, can be also electro-optical Q-switch; Laser output is by minute surface normal and resonant cavity optical axis coupling output plane mirror in a certain angle coupling output.
Described concave surface resonator mirror is the concave and convex lenses that concave surface is identical with convex curvature, concave surface is towards laser crystal, concave surface is coated with 0 ° of anti-reflection deielectric-coating of 0 ° high of centre wavelength 1064n m anti-and centre wavelength 808n m, convex surface is coated with 0 ° of anti-reflection deielectric-coating of centre wavelength 808n m, and the radius of curvature of concave surface resonator mirror minute surface is that 0.8m is between 1.6m.
Described laser crystal can be Nd:YVO
4crystal can be also Nd:GdVO
4crystal.
Described plane turning mirror is coated with 45 ° of anti-reflection deielectric-coating of centre wavelength 808nm and the all-dielectric film of centre wavelength 1064nm towards the one side of laser crystal, another side is coated with 45 ° of anti-reflection deielectric-coating of centre wavelength 808nm, and the normal of plane turning mirror minute surface and the optical axis included angle of crystal are 45 °.
When described coupling output plane mirror is placed, the normal of this minute surface and the optical axis of resonant cavity have certain angle, the scope of angle is between 5-35 °, minute surface is coated with 532nm laser all-dielectric film and the 1064nm anti-reflection deielectric-coating of respective angles towards the one side of frequency-doubling crystal, another side is coated with the 1064nm anti-reflection deielectric-coating of respective angles.
Described frequency-doubling crystal can be the lbo crystal of I class phase matched, can be also the lbo crystal of I class noncritical phase matching, can also be lbo crystal, clbo crystal or other non-linear frequency-doubling crystal of II class phase matched.
Described planar cavity mirror is coated with the all-dielectric film of 0 ° of 1064nm and 532nm dual wavelength towards the one side of frequency-doubling crystal, another side is plated film not.
Technique effect of the present utility model:
The utility model adopts " L " shape resonant cavity, and the total length of resonant cavity is less than 50cm, after tune Q, can obtain the laser pulse of 15ns with insied width.Adopt two laser pumping sources respectively a laser crystal to be carried out to pumping from both sides, can obtain higher laser-conversion efficiency and the 532nm Laser output that is greater than 10W.The stable resonator that to adopt curvature be concave mirror between 0.8-1.6m forms with planar cavity mirror, frequency-doubling crystal is placed on to the one end near planar cavity mirror, can make the laser beam diameter minimum in nonlinear crystal, improve the power density of nonlinear crystal inner laser, thereby obtain higher non-linear conversion efficiency.Laser crystal adopts Nd:YVO
4or Nd:GdVO
4crystal, the pump absorption peak of these two kinds of crystal is all that near 808nm, the optical maser wavelength of transmitting is 1064nm, the gain of these two kinds of laser crystals is all very high, and laser threshold is lower again, is again birefringece crystal simultaneously, be easy to obtain linearly polarized laser, be conducive to realize frequency multiplication.The frequency-doubling crystal adopting is the nonlinear crystal of I class phase matched or the nonlinear crystal of I class noncritical phase matching, can be also the nonlinear crystal of II class phase matched, obtains the laser of 532nm by intracavity frequency doubling.The low-angle coupling output plane mirror adopting is coated with 532nm total reflection medium film and the 1064nm anti-reflection deielectric-coating of respective angles, 532nm laser coupled can be gone out to resonant cavity, and the 532nm laser spectroscopy purity of output is high, and the 1064nm laser power being wherein mixed with is less than 1%.
Brief description of the drawings
Fig. 1 is at present comparatively common a kind of green (light) laser composition schematic diagram, and wherein 1 is pump laser, and 2 is pumping coupled lens, and 3 is Effect of Back-Cavity Mirror, and 4 is laser crystal, and 5 is Q-switch, and 6 is 532nm plane mirror, and 7 is frequency-doubling crystal, and 8 is plane output cavity mirror.
Fig. 2 is composition schematic diagram of the present utility model, and wherein 1 is concave surface resonator mirror, and 2 is laser crystal, and 3 is plane turning mirror, and 4 is laser Q switch, and 5 is coupling output plane mirror, and 6 is frequency-doubling crystal, and 7 is planar cavity mirror, and 8 is pump laser, and 9 is coupled lens group
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described, but should not limit the scope of the invention with this.
First refer to Fig. 2, Fig. 2 is a kind of installation composition schematic diagram for generation of the quasi-continuous pulse green laser of high-average power of the present invention.Comprise the concave surface resonator mirror (1), laser crystal (2), plane turning mirror (3) and the laser Q switch (4) that form resonant cavity, coupling output plane mirror (5), frequency-doubling crystal (6), planar cavity mirror (7), pump laser (8) and coupled lens group (9).It is characterized in that described concave surface resonator mirror (1) and jointly formed " L " shape laserresonator with plane turning mirror (3) and planar cavity mirror (7) that optical axis included angle is 45 ° of placements, the total length of resonant cavity is less than 50cm.Two pump lasers (8) carry out pumping by coupled lens group (9) to laser crystal respectively from the both sides of laser crystal (2), high power pumping luminous power can be coupled into laser crystal, thereby be convenient to obtain high-average power Laser output.Laser Q switch is adjusted Q to resonant cavity, obtains the narrow-pulse laser output that width is less than 15n s.The angle of coupling output plane mirror normal and resonant cavity optical axis is between 5-35 °, and frequency-doubling crystal is placed near planar cavity mirror (7) as far as possible.
The course of work of this device:
Two pump lasers or pumping optical fiber head (8) send the pump light of 808n m wavelength, pass through respectively coupled lens group (9) and be coupled into laser crystal (2), laser crystal (2), laser crystal is realized after population inversion, in the time that opening, Q switching forms the laser pulse of 1064n m in the resonant cavity being formed by concave surface resonator mirror (1) and plane turning mirror (3) and planar cavity mirror (7), this pulse is coming and going the laser that is converted into 532nm after frequency-doubling crystal (6) due to nonlinear effect, the laser of 532nm is reflected by planar cavity mirror (7) in resonant cavity, again pass through frequency-doubling crystal, reflect resonant cavity by coupling output plane mirror (5), obtain the pulse output light of 532nm.
Specific embodiment:
Refer to Fig. 2.Pump laser (8) adopts the 808nm tail optical fiber output semiconductor laser of two 30W continuous powers, the coupled lens group (9) of the pump light that its optical fiber head sends through being made up of the lens of two the same focal length, enters laser crystal (2).Laser crystal (2) adopts doping content 0.4%, is of a size of 4 × 4 × 10 Nd:YVO
4crystal, parcel is put into copper heat sink crystal is dispelled the heat after indium foil.Concave surface resonator mirror (1) adopts the concave and convex lenses of radius of curvature 0.8m, 0 ° of 808nm wavelength anti-reflection deielectric-coating of concave surface plating and the 1064nm film that is all-trans, and concave surface is towards laser crystal.The normal of plane turning mirror and laser crystal optical axis are 45 ° of angles.Q switching adopts acoustooptic Q-switching, and the q-frequency of acoustooptic Q-switching is made as 50kHz.Frequency-doubling crystal adopts and is of a size of 3 × 3 × 8mm, the lbo crystal of I class noncritical phase matching, and crystal two ends are coated with respectively 0 ° of anti-reflection deielectric-coating of 1064nm and 532nm.The angle of coupling output plane mirror and optical axis is 20 °, and the length of whole resonant cavity is 30cm.Adopt the laser aid of this embodiment, can obtain average power 12W, pulse repetition frequency 50k H z, the 532n m Laser output of pulse duration 10n s, the 1064nm laser power being mixed with in laser is less than 1%.
According to the checking of above specific embodiment, the present invention can overcome the shortcoming of prior art, produces the 532n m wavelength pulse laser that average power is greater than 10W.And it is high that the present invention has conversion efficiency, power output is high, spectral purity advantages of higher.
Claims (7)
1. the device for generation of the quasi-continuous pulse green laser of high-average power, comprise concave surface resonator mirror (1), laser crystal (2), plane turning mirror (3) and laser Q switch (4), coupling output plane mirror (5), frequency-doubling crystal (6), planar cavity mirror (7), pump laser (8), coupled lens group (9), it is characterized in that described concave surface resonator mirror (1) and plane turning mirror (3) and the planar cavity mirror (7) of 45 ° of placements have formed " L " shape laserresonator jointly, the total length of resonant cavity is less than 50cm, two pump lasers (8) carry out pumping by coupled lens group (9) to laser crystal respectively from the both sides of laser crystal (2), laser Q switch forms pulse laser output to resonance intonation Q, and Q switching can be acoustooptic Q-switching, can be also electro-optical Q-switch, Laser output is by minute surface normal and resonant cavity optical axis coupling output plane mirror (5) in a certain angle coupling output.
2. device according to claim 1, it is characterized in that concave surface resonator mirror (1) is the concave and convex lenses that concave surface is identical with convex curvature, concave surface is towards laser crystal (2), concave surface is coated with 0 ° of anti-reflection deielectric-coating of 0 ° high of centre wavelength 1064n m anti-and centre wavelength 808n m, convex surface is coated with 0 ° of anti-reflection deielectric-coating of centre wavelength 808n m, and the radius of curvature of concave surface resonator mirror minute surface is that 0.8m is between 1.6m.
3. device according to claim 1, is characterized in that laser crystal (2) can be Nd:YVO
4crystal can be also Nd:GdVO
4crystal.
4. device according to claim 1, it is characterized in that plane turning mirror (3) is coated with 45 ° of anti-reflection deielectric-coating of centre wavelength 808nm and the all-dielectric film of centre wavelength 1064nm towards the one side of laser crystal (2), another side is coated with 45 ° of anti-reflection deielectric-coating of centre wavelength 808nm, and the normal of plane turning mirror minute surface and the optical axis included angle of crystal are 45 °.
5. device according to claim 1, when the output plane mirror (5) that it is characterized in that being coupled is placed, the normal of this minute surface and the optical axis of resonant cavity have certain angle, the scope of angle is between 5-35 °, minute surface is coated with 532nm laser all-dielectric film and the 1064nm anti-reflection deielectric-coating of respective angles towards the one side of frequency-doubling crystal (6), another side is coated with the 1064nm anti-reflection deielectric-coating of respective angles.
6. device according to claim 1, it is characterized in that frequency-doubling crystal (6) can be the lbo crystal of I class phase matched, also can be the lbo crystal of I class noncritical phase matching, can also be lbo crystal, clbo crystal or other non-linear frequency-doubling crystal of II class phase matched.
7. device according to claim 1, is characterized in that planar cavity mirror (9) is coated with the all-dielectric film of 0 ° of 1064nm and 532nm dual wavelength towards the one side of frequency-doubling crystal, and another side is plated film not.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420147964.4U CN203895739U (en) | 2014-03-28 | 2014-03-28 | Device used for generating high-mean-power quasi-continuous pulse green laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420147964.4U CN203895739U (en) | 2014-03-28 | 2014-03-28 | Device used for generating high-mean-power quasi-continuous pulse green laser |
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|---|---|
| CN203895739U true CN203895739U (en) | 2014-10-22 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742819A (en) * | 2017-11-24 | 2018-02-27 | 深圳市杰普特光电股份有限公司 | Single pump both-end pumping green (light) laser |
| CN108963741A (en) * | 2018-09-21 | 2018-12-07 | 深圳市杰普特光电股份有限公司 | Bicrystal green (light) laser |
| CN110137791A (en) * | 2018-02-09 | 2019-08-16 | 中国科学院福建物质结构研究所 | A kind of long pulsewidth laser using 4f Image relaying system |
-
2014
- 2014-03-28 CN CN201420147964.4U patent/CN203895739U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742819A (en) * | 2017-11-24 | 2018-02-27 | 深圳市杰普特光电股份有限公司 | Single pump both-end pumping green (light) laser |
| CN110137791A (en) * | 2018-02-09 | 2019-08-16 | 中国科学院福建物质结构研究所 | A kind of long pulsewidth laser using 4f Image relaying system |
| CN108963741A (en) * | 2018-09-21 | 2018-12-07 | 深圳市杰普特光电股份有限公司 | Bicrystal green (light) laser |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141022 Termination date: 20200328 |
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| CF01 | Termination of patent right due to non-payment of annual fee |