CN105552709A - Single-frequency solid-state raman laser - Google Patents
Single-frequency solid-state raman laser Download PDFInfo
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- CN105552709A CN105552709A CN201610125285.0A CN201610125285A CN105552709A CN 105552709 A CN105552709 A CN 105552709A CN 201610125285 A CN201610125285 A CN 201610125285A CN 105552709 A CN105552709 A CN 105552709A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a single-frequency solid-state raman laser, and belongs to the technical field of lasers. The single-frequency solid-state raman laser comprises a pumping source, a coupling lens group, a laser gain medium, a raman crystal, an endoscope M1, an endoscope M3, an endoscope M4, a beam splitter M5 and a temperature control system, wherein the pumping source outputs a pump light; the coupling lens group, the endoscope M1, the laser gain medium, the raman crystal, the endoscope M3, a first FP etalon, a second FP etalon, the endoscope M4 and the beam splitter M5 are arranged along the propagation direction of the pump light; the temperature control system is arranged out of the laser gain medium and the raman crystal, so that stable single-frequency raman laser output with a high-peak power can be achieved; the single-frequency solid-state raman laser can be applied to the fields of a sodium guide star, nonlinear conversion, terahertz generation, laser medical treatment and the like, and has the characteristics of being wide in applicability, compact in structure, good in stability, simple to operate, low in cost, beneficial to industrial production and the like.
Description
Technical field
The present invention relates to a kind of single-frequency solid Roman laser, belong to the technical field of laser.
Background technology
Single frequency laser, due to advantages such as its coherence length are long, breadth of spectrum line is narrow, noise is little, has and applies widely in the fields such as laser radar, laser ranging, laser medicine, spectroscopy and nonlinear optical frequency conversion.At present in the research of solid-state single frequency laser, insert the method such as etalon or birefringent filter in general employing torsion mode resonant cavity, short oscillation cavity, resonant cavity and laser is operated in single longitudinal mode mode.
Raman laser is the laser based on stimulated Raman scattering principle, and by it, we can obtain the special wavelength that a lot of solid state laser can not directly be launched.The raman laser output spectrum that current generation a lot of normal Raman laser realizes is general wider [as H.N.Zhang, X.H.Chen, Q.P.Wang, X.Y.Zhang, J.Chang, L.Gao, H.B.Shen, Z.H.Cong, Z.J.Liu, X.T.TaoandP.Li, Opt.Letter.39 (9), 2014] can not meet in fields such as remote sensing, laser radar, adaptive optics some special applications demand of laser linewidth.
Chinese patent document CN103779766A (application number CN201410002628.5), discloses a kind of Nd:YAG/Ba (NO
3)
2single-frequency solid Roman laser, what select during this Patent design is three chamber mirror coupling cavity structures, and adds etalon in fundamental frequency chamber, realizes single-frequency fundamental frequency light and exports pumping Raman crystal to obtain the output of single-frequency Raman.Will realize optical power density in Raman output cavity in theory must be very high, but etalon (fundamental frequency light reflectivity 35%) being put into severe attrition chamber, fundamental frequency chamber optical power density for obtaining single-frequency fundamental frequency light in this patent document, making Raman light starting of oscillation difficulty.The structure adopted in the embodiment of this patent document, the raman cavity longitudinal mode spacing exporting this structure for realizing single-frequency Raman must be greater than the gain spectrum width of Raman crystal, therefore this patent Raman crystal such as Ba (NO that gain spectrum width can only be selected as far as possible narrow
3)
2, thus limit the relevance grade of this patent.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of single-frequency solid Roman laser, this laser adopts etalon coupling cavity or straight chamber all solid state laser structure, can ensure to export light be pulse or continuous print, single-frequency and there is compact conformation, good stability, the feature such as applied widely.
Technical scheme of the present invention is as follows:
A kind of single-frequency solid Roman laser, comprise pumping source, coupled lens group, gain medium, Raman crystal, chamber mirror M1, chamber mirror M3, chamber mirror M4, spectroscope M5 and temperature control system, pumping source exports pump light, the direction of propagation along described pump light arranges coupled lens group, chamber mirror M1, gain medium, Raman crystal, chamber mirror M3, one FP etalon, 2nd FP etalon, chamber mirror M4, spectroscope M5, chamber mirror M1 and chamber mirror M3 forms fundamental frequency light resonant cavity, chamber mirror M1 and chamber mirror M4 forms Raman light resonant cavity, gain medium, the outside of Raman crystal is provided with temperature control system.FP etalon is Fabry-Perot (F-P) etalon, gain medium, Raman crystal be all placed in temperature control system keep above-mentioned crystal and device temperature constant to reduce crystal thermal effect in laser chamber; Chamber mirror M1 and chamber mirror M3 forms fundamental frequency light resonant cavity, in fundamental frequency light resonant cavity, vibration generates fundamental frequency light, chamber mirror M1 and chamber mirror M4 forms Raman light resonant cavity, in Raman light resonant cavity, vibration generates Raman light, straight chamber all solid state laser structure is formed with this, chamber mirror M3 also plays the effect of isolation fundamental frequency light, prevents fundamental frequency light from getting to failure criteria tool on etalon.
Preferred according to the present invention, described single-frequency solid Roman laser also comprises chamber mirror M2, and chamber mirror M2 is between gain medium and Raman crystal, and chamber mirror M2 and chamber mirror M4 forms Raman light resonant cavity.Increase chamber mirror M2, chamber mirror M1 and chamber mirror M3 is made to form fundamental frequency light resonant cavity, chamber mirror M2 and chamber mirror M4 forms Raman light resonant cavity, coupling cavity all solid state laser structure is formed with this, the chamber shortening Raman light resonant cavity is long, add the optical power density in Raman light resonant cavity, reduce the loss of raman cavity, more easily realize Raman conversion.
Preferred further, described single-frequency solid Roman laser also comprises Q-switching device, and Q-switching device is between gain medium and chamber mirror M2, and Q-switching device outside is provided with temperature control system, and Q-switching device is actively Q-switched device or passive Q-adjusted device.Increase and adopt inner chamber Q-regulating technique, single-frequency laser pulse can be obtained and export, not have during Q-switching device, to export continuous single-frequency Raman light, have during Q-switching device and export pulse single-frequency Raman light.
Preferred further, two logical light end faces of described gain medium, Q-switching device are all coated with the anti-reflection film being greater than 99% to pump light, fundamental frequency light and Raman light light transmission rate.
Preferred according to the present invention, two logical light end faces of described Raman crystal are all coated with the anti-reflection film being greater than 99% to fundamental frequency light and Raman light light transmission rate.
Preferred according to the present invention, described chamber mirror M1 is coated with the deielectric-coating being greater than 99% to pump light transmitance, fundamental frequency light and Raman light reaction rate being all greater than to 99%.
Further preferred, described chamber mirror M1 is average mirror or plano-concave mirror or planoconvex lens.
Further preferred, described chamber mirror M2 be coated with to fundamental frequency light transmitance be greater than 99% and Raman light reaction rate is greater than 99% deielectric-coating.
Further preferred, described chamber mirror M2 is average mirror or plano-concave mirror or planoconvex lens.
Preferred according to the present invention, described chamber mirror M3 be coated with to fundamental frequency light reflectivity be greater than 99% and Raman light transmitance is greater than 99% deielectric-coating.To strengthen fundamental frequency light power density in Raman light resonator more easily to realize Raman conversion.
Preferred according to the present invention, described chamber mirror M4 is coated with and is greater than 99% and be the deielectric-coating between 1%-99% to Raman light transmitance to fundamental frequency light transmitance.
Preferred according to the present invention, described spectroscope M5 be coated with to fundamental frequency light reflectivity be greater than 99% and Raman light transmitance is greater than 99% deielectric-coating.Spectroscope M5 is for separating of fundamental frequency light and Raman light.
Preferred according to the present invention, described gain medium mixes Nd
3+crystal, glass, pottery any one, or mix the crystal of Yb, pottery, glass any one, the length of gain medium is 0.5mm-50mm, and doping content is 1%-10%.
Preferred according to the present invention, described Raman crystal is that tungstates is (as BaWO
4, SrWO
4, CaWO
4), nitrate is (as Ba (NO
3)
2), molybdate is (as CaMoO
4, BaTeMo
2o
9), KTP, KTA, adamantine any one, the length of Raman crystal is 0.5mm-100mm.
The listed material of above-mentioned gain medium, Raman crystal is laser material therefor well known to those skilled in the art.
Preferred according to the present invention, a described FP etalon, the 2nd FP etalon are Raman light component permeate, and transmitance is 1%-99%, and thickness is 0.1mm-50mm.
Preferred according to the present invention, described pumping source is quasi-cw pumping source or continuous pumping source.The frequency range in quasi-cw pumping source is 1-1000Hz, and duration ranges is 1 μ s-10ms.
What adopt in the present invention is the straight cavity configuration of three mirrors and further four mirror coupling cavity structures, puts into etalon and realize single-frequency Raman and export in raman cavity.Only need put into etalon thick according to different Raman crystal character to match and just can realize different single-frequency Raman and export, therefore the present invention has strict demand to Raman crystal unlike prior art.
The performance of various criterion tool mainly contains following two parameters and characterizes, selectes:
1. the frequency interval Δ ν of each centre frequency
Wherein, c is the propagation velocity of light, and n is etalon refractive index, and d is etalon thick.
2. the half breadth of transmission spectral line
Centre wavelength is λ
cspectral line be Δ λ with the free spectrum width that wavelength represents
c
Wherein, λ is optical maser wavelength, and R is etalon reflectivity, and subscript c means in centre wavelength " centre " English " center " and abbreviation;
Or be expressed as with frequency interval
The free spectrum width Delta λ that different Raman crystal exports
cdifferent, the thickness of a FP etalon determines the frequency interval Δ ν of this etalon
1if, this frequency interval Δ ν
1> free spectrum frequency interval Δ ν
cjust tentatively can obtain the output that live width is narrow, longitudinal mode number is less, then the frequency interval Δ ν of the 2nd FP etalon
2only be greater than the frequency interval Δ ν of a FP etalon
1just single longitudinal mode can be selected.Can select whether to add Q-switching device in fundamental frequency chamber of the present invention, not add Q-switching device and just can realize single-frequency raman laser and export continuously, the pulse of single-frequency Raman light can be realized after adding Q-switching device and export.
Beneficial effect of the present invention is:
1. the present invention has advantage that is compact, efficient, good stability, and what can be good at realizing laser wavelength range widens the special wavelength obtaining various special applications.
2. the present invention's combining monochromatic laser technology and raman laser technological perfectionism, the single-frequency Raman light adopting single-frequency solid Roman laser structure to obtain various new wavelength exports.
3. fitness of the present invention is wide, can change various gain medium, single-frequency raman laser that Raman crystal obtains various wavelength exports, meet the requirement to different wave length in practical application.
4. the present invention adopts quasi-cw pumping source or continuous pumping source, and the thermal effect of gain medium can be reduced in quasi-cw pumping source, can ensure, under the prerequisite that laser single-frequency exports, to maximize the output effect optimizing laser.
5. the present invention can adopt inner chamber Q-regulating technique, can obtain single-frequency laser pulse and export.
6. the present invention placed cavity mirror M2 before described Raman crystal, can greatly shorten raman cavity length and be easy to obtain single-frequency output with implementation pattern coupling.
7. the present invention adopts two etalon structure, can obtain exporting than the single-frequency laser of other single frequency lasers more narrow linewidth.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention 1;
Fig. 2 is the structural representation of the embodiment of the present invention 2;
Fig. 3 is the variation diagram of average output power with average pump power adding single-frequency Raman light after etalon of embodiment 2;
Fig. 4 is the single-frequency Raman light FP interference circle of embodiment 2;
Fig. 5 is the single-frequency Raman light pulse diagram of embodiment 2;
Wherein: 1, pumping source; 2, coupled lens group; 3, chamber mirror M1; 4, gain medium; 5, Q-switching device; 6, chamber mirror M2; 7, Raman crystal; 8, chamber mirror M3; 9, a FP etalon; 10, the 2nd FP etalon; 11, chamber mirror M4; 12, spectroscope M5.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further described, but be not limited thereto.
Embodiment 1:
The laser structure of the present embodiment as shown in Figure 1.
A kind of single-frequency solid Roman laser, comprise pumping source, coupled lens group, gain medium, Q-switching device, Raman crystal, chamber mirror M1, chamber mirror M3, chamber mirror M4, spectroscope M5 and temperature control system, pumping source exports pump light, the direction of propagation along described pump light arranges coupled lens group, chamber mirror M1, gain medium, Q-switching device, Raman crystal, chamber mirror M3, a FP etalon, the 2nd FP etalon, chamber mirror M4, spectroscope M5, and the outside of gain medium, Q-switching device, Raman crystal is equipped with temperature control system.Gain medium, Q-switching device, Raman crystal be all placed in temperature control system keep above-mentioned crystal and device temperature constant to reduce crystal thermal effect in laser cavity; Chamber mirror M1 and chamber mirror M3 forms fundamental frequency light resonant cavity, in fundamental frequency light resonant cavity, vibration generates fundamental frequency light, chamber mirror M1 and chamber mirror M4 forms Raman light resonant cavity, in Raman light resonant cavity, vibration generates Raman light, straight chamber all solid state laser structure is formed with this, chamber mirror M3 also plays the effect of isolation fundamental frequency light, prevents fundamental frequency light from getting to failure criteria tool on etalon.Pumping source is continuous pumping source, and chamber mirror M1 is plano-concave mirror, and M2 is average mirror, and gain medium is Nd:YVO
4, Nd:YVO
4length be 0.5mm, doping content is 1%; Raman crystal is CaWO
4, CaWO
4length be 100mm; One FP etalon thick is 0.1mm, and the 2nd FP etalon thick is 50mm.
Embodiment 2:
A kind of single-frequency solid Roman laser, as described in Example 1, difference is its structure, also comprises chamber mirror M2, chamber mirror M2 between gain medium and Raman crystal, as shown in Figure 2.Increase chamber mirror M2, chamber mirror M1 and chamber mirror M3 is made to form fundamental frequency light resonant cavity, chamber mirror M2 and chamber mirror M4 forms Raman light resonant cavity, coupling cavity all solid state laser structure is formed with this, the chamber shortening Raman light resonant cavity is long, add the optical power density in Raman light resonant cavity, reduce the loss of raman cavity, more easily realize Raman conversion.
As shown in Figure 2, it is coupled lens group, chamber mirror M1, gain medium, Q-switching device, chamber mirror M2, Raman crystal, chamber mirror M3, a FP etalon, the 2nd FP etalon, chamber mirror M4, spectroscope M5 that the direction of propagation along pump light is arranged to the laser structure of the present embodiment.Chamber mirror M1 and chamber mirror M3 forms fundamental frequency light resonant cavity, and chamber mirror M2 and chamber mirror M4 forms Raman light resonant cavity, forms coupling cavity all solid state laser structure with this.
Two logical light end faces of gain medium, Q-switching device are all coated with the anti-reflection film being greater than 99% to pump light, fundamental frequency light and Raman light light transmission rate; Two logical light end faces of Raman crystal are all coated with the anti-reflection film being greater than 99% to fundamental frequency light and Raman light light transmission rate.
Pumping source operation wavelength is 808nm, and peak power output is 60W, and pump mode is quasi-cw pumping, and quasi-cw pumping is 2ms/20ms pumping, that is: pumping is spaced apart 20ms (50Hz), each duration 2ms.Coupled lens group is made up of two lens, 1:1 coupling output, and fiber numerical aperture is 0.22, and the spot diameter focused on Nd:GGG crystal is 600 μm.
Gain medium 4 is Nd:GGG, is of a size of 3 × 3 × 10mm
3, length is 10mm, Nd
3+doping content be 1%.
Raman crystal is BaWO
4, be of a size of 5 × 5 × 42.5mm
3, length is 42.5mm.
Q-switching device is quartz glass.
One FP etalon thick is 1.5mm, 1178nm Raman light 50% transmitance; 2nd FP etalon thick is 8mm, 1178nm Raman light 50% transmitance.
Chamber mirror M1 is coated with and is greater than 99% and the deielectric-coating being greater than 99% to fundamental frequency light (wavelength 1062nm), Raman light (wavelength 1178nm) reflectivity to pump light (wavelength 808nm) transmitance; Chamber mirror M1 is average mirror.
Chamber mirror M2 is coated with and is greater than 99% to fundamental frequency light transmitance and Raman light reaction rate is greater than to the deielectric-coating of 99%; Chamber mirror M2 is plano-concave mirror.Using the object of chamber mirror M2 mainly in order to reduce the loss of Raman light resonant cavity, more easily realizing Raman conversion.
Chamber mirror M3 be coated with to fundamental frequency light reflectivity be greater than 99% and Raman light transmitance is greater than 99% deielectric-coating, strengthen fundamental frequency light power density in raman cavity more easily to realize Raman conversion.
Chamber mirror M4 is coated with and is greater than 99% to fundamental frequency light transmitance and is the deielectric-coating of 14% to Raman light transmitance.
Spectroscope M5 is for separating of fundamental frequency light and Raman light and be coated with and be greater than 99% to fundamental frequency light reflectivity and Raman light transmitance be greater than to the deielectric-coating of 99%.
Add etalon as shown in Figure 3 to realize can obtaining maximum average output power 24mW when pump power is 2.139W after stable single-frequency Raman light exports, light---light conversion efficiency is 1.1%.Because raman laser efficiency itself is lower, but also be single-frequency, the output Raman light of the single-frequency solid Roman laser described in the present embodiment is comparatively efficient.
The longitudinal mode number measured after adding etalon as shown in Figure 4 only has one to achieve the output of single-frequency Raman light as seen.By testing other Raman crystals, utilizing technical scheme of the present invention all can realize single-frequency Raman light and exporting.
Realize the laser pulse figure after stable single-frequency Raman light output as shown in Figure 5, pulsewidth is 6.2ns, and maximum peak power is 1.93kW.The present invention not only goes for multiple Raman crystal, and the single-frequency Raman light of output is also very steady, and stability is high.
Embodiment 3:
A kind of single-frequency solid Roman laser, as described in Example 2, difference is its structure, and a FP etalon thick is 1.5mm, and the 2nd FP etalon thick is 15mm; Gain medium is the length of ceramic Nd:YAG, Nd:YAG is 50mm, and doping content is 10%; Raman crystal is diamond, adamantine length 0.5mm; Chamber mirror M1 is planoconvex lens, and chamber mirror M2 is planoconvex lens.
Embodiment 4:
A kind of single-frequency solid Roman laser, as described in Example 2, difference is its structure, and gain medium is Yb:YVO
4, Yb:YVO
4length be 20mm, doping content is 1%; Raman crystal is Ba (NO
3)
2, Ba (NO
3)
2length is 20mm; One FP etalon thick is 1.5mm, and the 2nd FP etalon thick is 15mm.
Embodiment 5:
A kind of single-frequency solid Roman laser, as described in Example 2, difference is its structure, and gain medium is the length of Yb:YAG, Yb:YAG is 40mm, and doping content is 7%; Raman crystal is BaTeMo
2o
9, BaTeMo
2o
9length is 30mm; One FP etalon thick is 1mm, and the 2nd FP etalon thick is 10mm.
Embodiment 6:
A kind of single-frequency solid Roman laser, as described in Example 2, difference is its structure, and Raman crystal is KTP, KTP length is 60mm.
Embodiment 7:
A kind of single-frequency solid Roman laser, as described in Example 2, difference is its structure, and Raman crystal is KTA, KTA length is 70mm.
Embodiment 8:
A kind of single-frequency solid Roman laser, as described in Example 7, difference is its structure, and Raman crystal is SrWO
4.
Embodiment 9:
A kind of single-frequency solid Roman laser, as described in Example 7, difference is its structure, and Raman crystal is CaMoO
4.
Claims (10)
1. a single-frequency solid Roman laser, it is characterized in that, comprise pumping source, coupled lens group, gain medium, Raman crystal, chamber mirror M1, chamber mirror M3, chamber mirror M4, spectroscope M5 and temperature control system, pumping source exports pump light, the direction of propagation along described pump light arranges coupled lens group, chamber mirror M1, gain medium, Raman crystal, chamber mirror M3, one FP etalon, 2nd FP etalon, chamber mirror M4, spectroscope M5, chamber mirror M1 and chamber mirror M3 forms fundamental frequency light resonant cavity, chamber mirror M1 and chamber mirror M4 forms Raman light resonant cavity, gain medium, the outside of Raman crystal is provided with temperature control system, preferably, two logical light end faces of described Raman crystal are all coated with the anti-reflection film being greater than 99% to fundamental frequency light and Raman light light transmission rate.
2. single-frequency solid Roman laser according to claim 1, is characterized in that, described single-frequency solid Roman laser also comprises chamber mirror M2, and chamber mirror M2 is between gain medium and Raman crystal, and chamber mirror M2 and chamber mirror M4 forms Raman light resonant cavity.
3. single-frequency solid Roman laser according to claim 2, it is characterized in that, described single-frequency solid Roman laser also comprises Q-switching device, Q-switching device is between gain medium and chamber mirror M2, Q-switching device outside is provided with temperature control system, and Q-switching device is actively Q-switched device or passive Q-adjusted device.
4. single-frequency solid Roman laser according to claim 3, is characterized in that, two logical light end faces of described gain medium, Q-switching device are all coated with the anti-reflection film being greater than 99% to pump light, fundamental frequency light and Raman light light transmission rate.
5. single-frequency solid Roman laser according to claim 2, is characterized in that, described chamber mirror M1 is coated with the deielectric-coating being greater than 99% to pump light transmitance, fundamental frequency light and Raman light reaction rate being all greater than to 99%; Described chamber mirror M2 is coated with and is greater than 99% to fundamental frequency light transmitance and Raman light reaction rate is greater than to the deielectric-coating of 99%; Described chamber mirror M3 is coated with and is greater than 99% to fundamental frequency light reflectivity and Raman light transmitance is greater than to the deielectric-coating of 99%; Described chamber mirror M4 is coated with and is greater than 99% to fundamental frequency light transmitance and is the deielectric-coating between 1%-99% to Raman light transmitance; Described spectroscope M5 is coated with and is greater than 99% to fundamental frequency light reflectivity and Raman light transmitance is greater than to the deielectric-coating of 99%.
6. single-frequency solid Roman laser according to claim 2, is characterized in that, described chamber mirror M1 is average mirror or plano-concave mirror or planoconvex lens; Described chamber mirror M2 is average mirror or plano-concave mirror or planoconvex lens.
7. single-frequency solid Roman laser according to claim 1, is characterized in that, described gain medium mixes Nd
3+crystal, glass, pottery any one, or mix the crystal of Yb, pottery, glass any one; The length of gain medium is 0.5mm-50mm, and doping content is 1%-10%.
8. single-frequency solid Roman laser according to claim 1, is characterized in that, described Raman crystal be tungstates, nitrate, molybdate, KTP, KTA, adamantine any one, the length of Raman crystal is 0.5mm-100mm.
9. single-frequency solid Roman laser according to claim 1, is characterized in that, a described FP etalon, the 2nd FP etalon are Raman light component permeate, and transmitance is 1%-99%, and thickness is 0.1mm-50mm.
10. single-frequency solid Roman laser according to claim 1, is characterized in that, described pumping source is quasi-cw pumping source or continuous pumping source.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106169696A (en) * | 2016-08-29 | 2016-11-30 | 暨南大学 | A kind of continuously tunable laser based on stimulated raman scattering |
| CN107482425A (en) * | 2017-10-16 | 2017-12-15 | 中国科学院合肥物质科学研究院 | A kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79um laser pumping source |
| CN109842014A (en) * | 2019-03-13 | 2019-06-04 | 山东大学 | A kind of compact-sized pure-tone pulse Ramar laser |
| CN110556695A (en) * | 2018-06-03 | 2019-12-10 | 中国科学院大连化学物理研究所 | 2.8 micron wave band wavelength tunable laser |
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| CN109842014A (en) * | 2019-03-13 | 2019-06-04 | 山东大学 | A kind of compact-sized pure-tone pulse Ramar laser |
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