CN104659648B - Neodymium-doped barium silicate is from frequency multiplication ultrashort pulse laser - Google Patents
Neodymium-doped barium silicate is from frequency multiplication ultrashort pulse laser Download PDFInfo
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Abstract
The present invention provides a kind of neodymium-doped barium silicate from frequency multiplication ultrashort pulse laser.It is described to be used to directly export fundamental frequency and double-frequency laser from frequency multiplication ultrashort pulse laser, including as the gain media of the laser and the laser self frequency-doubling crystal of frequency-doubling crystal, the laser self frequency-doubling crystal is the La of Nd ion doping simultaneously3Ga5SiO14Crystal.Laser of the invention has good operability and stability, the advantages that compact-sized small and exquisite, system is simple, cost is relatively low, fundamental frequency is with from the output of frequency multiplication ultra-short pulse laser, high repetition frequency, the pulse width of picosecond magnitude and high light beam quality, it can be widely applied to the fields such as display, medical treatment, information transmission, scientific research, have a good application prospect and commercial value.
Description
Technical field
The present invention relates to laser technology field, more particularly to a kind of neodymium-doped barium silicate from frequency multiplication ultra-short pulse laser
Device.
Background technique
Barium silicate (La3Ga5SiO14, it is abbreviated as LGS) and crystal is a kind of multifunctional material, good piezoelectric property,
Electro-optical characteristic and dielectric characteristic, which have been obtained, to be widely applied.As piezoelectric material, due to its huge application potential,
Have become the research hotspot of countries in the world, wherein acoustic surface wave application in, it be it is few in number can meet simultaneously it is multinomial
The crystal of technical requirements；As electrooptical material, it has been used widely in the laser as electro-optical Q-switch；As electricity
Dielectric material, excellent characteristic also result in extensive concern and research.In terms of as laser gain medium, neodymium (Nd) ion
The La of doping3Ga5SiO14Crystal has been successfully realized the operating of continuous and Q impulse at present.Therefore, the crystal is sufficiently excavated to be had
Standby functional characteristic has very important significance and is worth with application prospect tool.
All solid state ultra-short pulse laser is to be less than picosecond magnitude (10 by the pulse duration that mode-locking technique obtains-12)
Ultra-short pulse laser, it has extremely wide application value in fields such as national defence, industry, medical treatment and scientific researches.Wherein have
The reliable and stable picosecond oscillator of high light beam quality can become the seed source of high-power all-solid-state picosecond laser amplifier, be
Widely applied basis.The red blue green ultra-short pulse laser generated by frequency-doubled effect is even more in laser display and laser imaging
Equal fields have particularly important meaning.
In general, a laser often exports a kind of laser of specific wavelength.Currently, expanded laser light wave-length coverage is most
The common approach is that using nonlinear optical crystal, is matched technology using position, pass through frequency multiplication and frequency, difference frequency and T parameter equivalent
Benefit is realized.In recent years, also have using Raman shift crystal, by laser beam transformation to certain specific bands.These methods enrich sharp
Optical wavelength, to meet the needs of different aspect.Laser self frequency-doubling crystal (Self-frequency doubling crystal, letter
Claim SFD crystal) it is multifunctional crystal a kind of while that there is laser and nonlinear effect.With laser self frequency-doubling crystal's production
All solid state laser has small in size, easy to adjust, the advantages that stability is high.
It is that acquisition gain media is ultrashort by the passive mode-locking that saturated absorbing body (SESAM) is realized in laser technology field
The main means of pulse oscillator.It can only be humorous when being used as passive mode-locking element since SESAM is similar to a reflecting mirror
One end mirror of vibration chamber.Therefore while using SESAM as mode-locking device, obtaining the method unidirectionally exported is made with crystal
For output end, this is also the usual way of current commodity laser.But, it is contemplated that when high power pump, laser crystal exists
Thermal lensing effect, therefore the beam quality for using crystal as the laser of output end is not good enough, has the biggish angle of divergence.
Summary of the invention
La3Ga5SiO14Crystal is widely used as laser gain medium.Present inventor has found under study for action,
Nd adulterates La3Ga5SiO14Crystal has frequency-doubled effect, can be used as frequency multiplication element and uses during optical sccond-harmonic generation.Both due to it
Can be used as laser gain medium, and can be used as frequency-doubling crystal, can be used as from the laser of frequency multiplication ultrashort pulse laser from
Frequency-doubling crystal.Has the characteristics that frequency-doubled effect using it, it is an object of the present invention to provide a kind of frequency multiplication element.The present invention
Another purpose be to provide for the La of Nd ion doping3Ga5SiO14Crystal answering during optical sccond-harmonic generation as frequency-doubling crystal
With.Have the characteristics that laser self-frequency-doubling's effect, another object of the present invention are to provide for a kind of laser self-frequency-doubling's member using it
Part.A further object of the present invention is to provide Nd doping La3Ga5SiO14Crystal is as laser self frequency-doubling crystal ultrashort from frequency multiplication
Application in pulse laser.Another purpose of the invention is that providing a kind of utilization Nd doping La3Ga5SiO14Crystal conduct
Laser self frequency-doubling crystal from frequency multiplication ultrashort pulse laser.
In order to realize one object of the present invention, the present invention provides a kind of frequency multiplication elements, by Nd ion doping
La3Ga5SiO14Crystallization.
In order to realize another object of the present invention, the present invention provides the La of Nd ion doping3Ga5SiO14Crystal conduct
Application of frequency-doubling crystal during optical sccond-harmonic generation.
In order to realize a further object of the present invention, the present invention provides a kind of laser self-frequency-doubling's elements, are mixed by Nd ion
Miscellaneous La3Ga5SiO14Crystallization.
In order to realize another object of the present invention, the present invention provides the La of Nd ion doping3Ga5SiO14Crystal conduct
Laser self frequency-doubling crystal is from the application in frequency multiplication ultrashort pulse laser.
In order to realize an also purpose of the invention, the present invention provides one kind from frequency multiplication ultrashort pulse laser, is used for
Fundamental frequency and double-frequency laser are directly exported, including simultaneously as the gain media of the laser and the laser self-frequency-doubling of frequency-doubling crystal
Crystal, wherein the laser self frequency-doubling crystal is the La of Nd ion doping3Ga5SiO14Crystal.
In one embodiment, laser of the invention can also include:
Pumping source, for providing pumping laser；Optionally, the pumping source is semiconductor laser；
Laser resonator, for obtaining oscillating laser, wherein the laser self frequency-doubling crystal is arranged in the laser resonance
It is intracavitary；And
Optical focusing system is arranged between the pumping source and the laser resonator, for pumping laser to be imaged
It focuses on the laser self frequency-doubling crystal.
In one embodiment, the laser resonator can successively include flat output mirror, the first plano-concave along optical path
Mirror, the second plano-concave mirror, third plano-concave mirror and semiconductor saturable absorbing mirror, the first plano-concave mirror and the second plano-concave mirror
Curvature is identical, and concave surface is relatively and confocal setting, the laser self frequency-doubling crystal are arranged in the first plano-concave mirror and described second
The focal point of plano-concave mirror；Two as the laser resonator of the flat output mirror and the semiconductor saturable absorbing mirror
End mirror.
In one embodiment, it can have and be greater than between the first plano-concave mirror and the optical axis of the second plano-concave mirror
0 degree and the low-angle angle less than 10 degree.
In one embodiment, the first plano-concave mirror surface can be coated with to the side of the pumping source to pumping laser
Anti-reflection deielectric-coating, the side towards the laser self frequency-doubling crystal can be coated with to the anti-reflection deielectric-coating of pumping laser and to oscillation
The high inverse medium film of laser；Two ends towards the first plano-concave mirror and the second plano-concave mirror of the laser self frequency-doubling crystal
Face can be coated with respectively to the anti-reflection deielectric-coating of pumping laser and to the anti-reflection deielectric-coating of oscillating laser；The second plano-concave mirror surface to
The side of the laser self frequency-doubling crystal can be coated with to the anti-reflection deielectric-coating of pumping laser and to the high inverse medium film of oscillating laser；
The third plano-concave mirror surface can be coated with to the side of the second plano-concave mirror and the semiconductor saturable absorbing mirror to oscillation
The high inverse medium film of laser；The flat output mirror can be coated with towards the side of the first plano-concave mirror to oscillating laser Gao Fanjie
Plasma membrane, the other side can be coated with to the anti-reflection deielectric-coating of oscillating laser.
In one embodiment, the operating temperature of the laser self frequency-doubling crystal can be 10-18 DEG C.
In one embodiment, the laser self frequency-doubling crystal can be the Nd ion doping of doping concentration 1%at
La3Ga5SiO14Crystal.
Present inventor has found La for the first time3Ga5SiO14After crystal doping neodymium ion, as a kind of laser crystal, tool
There is laser self-frequency-doubling's effect, and obtains all solid state ultrashort pulse self-frequency-doubling laser based on this.With prior art phase
Than the present invention has at least the following advantages:
1) present invention uses the La of Nd ion doping3Ga5SiO14It is defeated by the passive mode-locking of SESAM as gain media
Ultrashort pulse basic frequency laser out, while it can be realized from frequency multiplication ultrashort pulse it is not necessary that frequency-doubling crystal is added outside intracavitary or chamber
Laser directly exports.
2) present invention for passive mode-locking element SESAM and third concave mirror do not need fine tuning can be realized it is stable
Continuous locking mold.Opening pump laser power supply and increasing power can be realized mode locking operating.
3) laser of the invention uses plane mirror as output end, compares crystal output end, will not in high power because
It generates heat and influences stability.
4) laser of the invention is all solid state laser, and pumping laser can be semiconductor laser small in size；Its
Secondary, the present invention exports double-frequency laser using self-frequency-doubling crystal, outside intracavitary or chamber is not necessarily to that frequency-doubling crystal is added；Furthermore the present invention
Resonant cavity is few using number of elements, and resonant cavity total length is shorter, the size of oscillator more compact.
5) present invention use from frequency multiplication ultra-short pulse laser technology so that resonant cavity directly export it is picosecond sharp from frequency multiplication
Light.Laser self frequency-doubling crystal used is multifunctional material simultaneously, has good cross-application potentiality.In medical treatment, laser display
It is with a wide range of applications with fields such as imaging, information transmission.
6) laser of the invention has good operability and stability, and compact-sized small and exquisite, system is simple, cost
Lower, fundamental frequency with from the output of frequency multiplication ultra-short pulse laser, high repetition frequency, the pulse width of picosecond magnitude and high light beam quality
The advantages that.
According to the following detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings, those skilled in the art will be brighter
The above and other objects, advantages and features of the present invention.
Detailed description of the invention
Some specific embodiments of the present invention is described in detail by way of example and not limitation with reference to the accompanying drawings hereinafter.
Identical appended drawing reference denotes same or similar part or part in attached drawing.It should be appreciated by those skilled in the art that these
What attached drawing was not necessarily drawn to scale.In attached drawing:
Fig. 1 is the schematic index path according to an embodiment of the invention from frequency multiplication ultrashort pulse laser；
Fig. 2 is the double-frequency laser ccd image of one embodiment of the invention exported from frequency multiplication ultrashort pulse laser；
Fig. 3 is the spectrogram of one embodiment of the invention measured from frequency multiplication ultrashort pulse laser with spectrometer；
Fig. 4 a and 4b are that the stable mode-locking of one embodiment of the invention measured from frequency multiplication ultrashort pulse laser is defeated respectively
Fundamental frequency and double frequency pulse sequence out；
Fig. 5 is that the pulse of one embodiment of the invention measured from frequency multiplication ultrashort pulse laser with intensity autocorrelation function analyzer is wide
Spend signal.
Specific embodiment
The inventor of the present application discovered that Nd adulterates La3Ga5SiO14Crystal has laser self-frequency-doubling's effect, will using the property
It is applied to from frequency multiplication ultrashort pulse laser.
It is of the invention from frequency multiplication ultrashort pulse laser, using the La of Nd ion doping3Ga5SiO14Crystal (following shorthand
For Nd:LGS crystal) gain media and frequency-doubling crystal as laser simultaneously, can be generated in resonant cavity simultaneously fundamental frequency with
Double-frequency laser simultaneously stablizes output.Laser of the invention generally may include pumping source, and optical focusing system and laser are humorous
Shake chamber, and Nd:LGS crystal is arranged in laser resonator.Pumping source is being pumped for providing pumping laser, optical focusing system setting
Between Pu source and laser resonator, it is used for pumping laser imaging and focusing to Nd:LGS crystal.Laser resonator is for obtaining
Oscillating laser, Nd:LGS crystal generate the necessary population overturning needed for laser generates under pumping laser pumping, generate fundamental frequency
Part of fundamental light is simultaneously converted to frequency doubled light by light.Fundamental frequency light and frequency doubled light vibrate in laser resonator, obtain stable fundamental frequency
It is exported with double-frequency laser.
Fig. 1 shows the schematic index path according to an embodiment of the invention from frequency multiplication ultrashort pulse laser.Such as
Shown in Fig. 1, laser generally may include pumping source (not shown), optical focusing system 1 and laser resonator.Pumping
Source can be selected as semiconductor laser.Laser resonator successively includes that flat output mirror 7, the first plano-concave mirror 2, second are flat along optical path
Concave mirror 4, third plano-concave mirror 5 and semiconductor saturable absorbing mirror 6.First plano-concave mirror 2 is identical with the curvature of the second plano-concave mirror 4,
Its concave surface is opposite and focus is overlapped ground setting, forms symmetric confocal formula structure.Nd:LGS crystal 3 is arranged in symmetric confocal formula structure
Center (namely 4 common focus of the first plano-concave mirror 2 and the second plano-concave mirror) at.Flat output mirror 7 and semiconductor saturable are inhaled
Receive two end mirrors of the mirror 6 as laser resonator.Wherein, have between the first plano-concave mirror 2 and the optical axis of the second plano-concave mirror 4 and be greater than
0 degree and the low-angle angle less than 10 degree, such laser-conversion efficiency it is higher.First plano-concave mirror 2 is plated towards the side of pumping source
Have to the anti-reflection deielectric-coating of pumping laser, the side towards Nd:LGS crystal 3 is coated with to the anti-reflection deielectric-coating of pumping laser and to vibration
Swing the high inverse medium film of laser.Here oscillating laser refers to the basic frequency laser and double-frequency laser being emitted from laser resonator.Nd:
Two end faces towards the first plano-concave mirror 2 and the second plano-concave mirror 4 of LGS crystal 3 are coated with respectively to the anti-reflection deielectric-coating of pumping laser
And to the anti-reflection deielectric-coating of oscillating laser.Second plano-concave mirror 4 is coated with towards the side of Nd:LGS crystal 3 to anti-reflection Jie of pumping laser
Plasma membrane and to the high inverse medium film of oscillating laser.Third plano-concave mirror 5 is coated with towards the side of the second plano-concave mirror 4 to oscillating laser height
Inverse medium film.Flat output mirror 7 is coated with towards the side of the first plano-concave mirror 2 to the high inverse medium film of oscillating laser, and the other side is coated with
To the anti-reflection deielectric-coating of oscillating laser.
When optical focusing system 1 focuses on the pumping laser that pumping source exports on Nd:LGS crystal 3, Nd:LGS crystal 3
The necessary population overturning needed for laser generates is generated under pumping laser pumping, because of the effect of stimulated radiation, in Nd:LGS
The fundamental frequency light emitted to all directions is generated in crystal 3.Wherein, the side towards the second plano-concave mirror 4 from Nd:LGS crystal 3 goes out
The fundamental frequency light penetrated is reflected onto third plano-concave mirror 5 via the second plano-concave mirror 4, and fundamental frequency light is focused to semiconductor by third plano-concave mirror 5
Saturable absorbing mirror 6, and third plano-concave mirror 5 is reflexed to by semiconductor saturable absorbing mirror 6, then reflexed to by the second plano-concave mirror 4
In Nd:LGS crystal 3, continue that Nd:LGS crystal 3 is motivated to generate more fundamental frequency lights.Towards the first plano-concave from Nd:LGS crystal 3
The fundamental frequency light of the side outgoing of mirror 2 is incident to flat output mirror 7 after the reflection of the first plano-concave mirror 2, most fundamental frequency lights from
The reflection of flat output mirror 7 is incident in Nd:LGS crystal 3 again via the first plano-concave mirror 2.In this way, fundamental frequency light is in semiconductor saturable
It is vibrated back and forth between absorbing mirror 6 and flat output mirror 7, and realizes stable mode-locking, form ultra-short pulse laser, and in oscillation
Ultrashort pulse frequency-doubling laser is generated by the frequency-doubled effect of Nd:LGS crystal 3 in the process.Fundamental frequency light and the optical path of frequency doubled light such as Fig. 1
In solid line and dotted line shown in.Other than the light along paths, the fundamental frequency light in other directions escapes outside laser resonator quickly
It is vibrated without being formed.And then constantly increase when being propagated in Nd:LGS crystal 3 along the fundamental frequency light of paths and the light intensity of frequency doubled light
Add, so as to steadily continuously export fundamental frequency light and frequency doubled light in flat output mirror 7.
Nd:LGS crystal can give off the light of 1314nm, 1064nm and 904nm under pumping laser pumping effect, and
Generate the ultrashort pulse light of 657nm, 532nm and 452nm respectively in the case where acting on from frequency multiplication.Below with run on 1064nm and from
For the ultrashort pulse Nd:LGS green (light) laser of the SESAM passive mode-locking of frequency multiplication 532nm, the contents of the present invention are described.
In the laser, pumping source is the diode laser of the fiber coupling output of the triumphant Pring AS's production in Beijing, pump
The central wavelength of Pu laser is 808nm, and output power 2W, optical fiber core diameter is 50 microns, numerical aperture 0.22.Nd:LGS crystal
3 doping concentration is 1%at, 3 × 3 × 8mm of gain size3, the crystal underedge face being placed on above red copper block is cooling,
Temperature is controlled at 14 DEG C (temperature can be between 10-18 DEG C), and the both ends of Nd:LGS crystal 3 are coated with double anti-reflection films, i.e., to pumping
Laser is anti-reflection deielectric-coating (@of T > 98% 808nm) and to the anti-reflection deielectric-coating of oscillating laser (@of T > 99.8% 1064nm&532nm).Light
It learns focusing system 1 to focus on the diode laser pumped laser imaging of optical fiber output on Nd:LGS crystal 3, imaging multiplying power is
1:1, focal length 50mm, interface are SMA905 standard interface, and the spot diameter after focusing is about 50 microns.First plano-concave mirror 2
Radius of curvature R=75mm, eyeglass are coated with towards 1 one side of optical focusing system to the anti-reflection deielectric-coating of pumping laser, and transmitance is greater than
99.8%, the side towards Nd:LGS crystal 3 is coated with to the anti-reflection deielectric-coating of pumping laser (@of T > 98% 808nm) and swashs to oscillation
The high inverse medium film of light (@of R > 99.8% 1064nm&532nm).Radius of curvature R=75mm of second plano-concave mirror 4 guarantees Nd:LGS crystal
The pattern match of laser beam waist and pump light on 3, the second plano-concave mirror 4 is opposite with the concave surface of the first plano-concave mirror 2, and focus is overlapped,
The low-angle angle with 5 degree between the two optical axis.The concave surface of second plano-concave mirror 4 is coated with the high inverse medium film to oscillating laser
(R>99.8%@1064nm&532nm).Third plano-concave mirror 5 is the concave mirror that radius of curvature is 100mm, and concave surface is coated with to vibration
The high inverse medium film of laser (@of R > 99.8% 1064nm&532nm) is swung, for focusing the oscillation light on semiconductor saturable absorbing mirror 6
Spot makes the work of semiconductor saturable absorbing mirror 6 in saturation state, guarantees the stable mode-locking of laser.Semiconductor saturable absorption
Mirror 6 is commercial SESAM, modulation depth 4%, central wavelength oscillating laser 1064nm at, to oscillating laser 1064nm with
532nm high is anti-.Flat output mirror 7 is 0.5% towards the intracavitary output coupling rate at oscillating laser that is coated on one side of laser resonance
Deielectric-coating, another side are coated with the anti-reflection deielectric-coating (@of T > 99.8% 1064nm&532nm) to oscillating laser.Flat output mirror 7 and half
Conductor saturable absorbing mirror 6 constitutes two end mirrors of laser resonator.The a length of 0.86m of the chamber of laser resonator, it is corresponding to repeat
Frequency 173.7MHz.It is 46 μm that girdling the waist on Nd:LGS crystal 3, which is calculated, with abcd matrix, and girdling the waist on SESAM is 60 μm.
Basic frequency laser and double-frequency laser are separated with prism or other spectroscopes after flat output mirror 7, and just using CCD
Double-frequency laser light spot image against the shooting of double-frequency laser exit direction is as shown in Figure 2.As can be seen from Figure 2 laser facula
Beam quality is preferable.The spectrogram of frequency doubled light is obtained as shown in figure 3, there is the very high pulse of intensity at 532nm using spectrometer
Peak value, this directly confirms that laser of the invention can export frequency doubling light pulse.
Basic frequency laser and double-frequency laser are separated with prism or other spectroscopes after flat output mirror 7, visited using photoelectricity
Head separately detects the output laser pulse of basic frequency laser and double-frequency laser, obtains pulse train as shown in Figs. 4a and 4b.Wherein,
The minimum scale of the abscissa of the following figure is microsecond in Fig. 4 a and 4b, and the minimum scale of the abscissa of upper figure is (to be equivalent to down nanosecond
The length amplification 10 of the minimum scale of figure6Times).From the following figure of Fig. 4 a it is found that the basic frequency laser intensity is several in Long time scale
It does not fluctuate, stability is fine.It can see more visible sequence chart from the upper figure of Fig. 4 a, it was demonstrated that the fundamental frequency of passive mode-locking swashs
Light is more stable.Similarly, also very stable from the double-frequency laser exported known to the upper following figure of Fig. 4 b.And basic frequency laser and frequency multiplication
Repetition rate is consistent in the sequence chart of laser, further demonstrates ultrashort pulse frequency-doubling laser really while producing fundamental frequency and swashs
Light and double-frequency laser.
The laser autocorrelation signal obtained using intensity autocorrelation function analyzer (commercial measuring instrument) is as shown in Figure 5.From the signal
In available basic frequency laser pulse width (full width at half maximum (FWHM)) be 11 picoseconds, it was demonstrated that acquisitions laser be ultra-short pulse laser.
In the present invention, it if desired obtains and runs on 1314nm and from the ultrashort of the SESAM passive mode-locking of frequency multiplication 657nm
Pulse Nd:LGS red laser, only need to be by the correspondence to oscillating laser high inverse medium film and the anti-reflection deielectric-coating to oscillating laser
Wavelength is set as 1314nm and 657nm.
If desired the ultrashort pulse Nd:LGS indigo plant for running on 904nm and the SESAM passive mode-locking from frequency multiplication 452nm is obtained
Light laser need to will be only set as to the high inverse medium film of oscillating laser and to the corresponding wavelength of the anti-reflection deielectric-coating of oscillating laser
904nm and 452nm.
It will be understood by those skilled in the art that laser of the invention may be used also other than the laser resonator shown in Fig. 1
To use the different types of laser resonator comprising Nd:LGS laser self frequency-doubling crystal.
So far, although those skilled in the art will appreciate that present invention has been shown and described in detail herein multiple shows
Example property embodiment still without departing from the spirit and scope of the present invention, still can according to the present disclosure directly
Determine or deduce out many other variations or modifications consistent with the principles of the invention.Therefore, the scope of the present invention is understood that and recognizes
It is set to and covers all such other variations or modifications.
Claims (9)
1. a kind of frequency multiplication element, by the La of Nd ion doping3Ga5SiO14Crystallization is arranged in the laser of ultrashort pulse laser
In resonant cavity, the laser resonator is for obtaining oscillating laser, the La of the Nd ion doping3Ga5SiO14Crystal is pumping
The necessary population overturning needed for laser generates is generated under laser pump (ing), generates fundamental frequency light and part of fundamental light is converted into frequency multiplication
Light, the fundamental frequency light and the frequency doubled light vibrate in the laser resonator, obtain stable fundamental frequency and double-frequency laser output,
Wherein, the La of the Nd ion doping3Ga5SiO14The operating temperature of crystal is 14 DEG C, the La of the Nd ion doping3Ga5SiO14
The doping concentration of crystal is 1%at.
The La of 2.Nd ion doping3Ga5SiO14Application of the crystal as frequency-doubling crystal during optical sccond-harmonic generation, the frequency-doubling crystal
It is arranged in the laser resonator of ultrashort pulse laser, the laser resonator is for obtaining oscillating laser, the Nd ion
The La of doping3Ga5SiO14Crystal generates the necessary population overturning needed for laser generates under pumping laser pumping, generates fundamental frequency
Part of fundamental light is simultaneously converted to frequency doubled light by light, and the fundamental frequency light and the frequency doubled light are vibrated in the laser resonator, obtained
Obtain stable fundamental frequency and double-frequency laser output, wherein the La of the Nd ion doping3Ga5SiO14The operating temperature of crystal is 14
DEG C, the La of the Nd ion doping3Ga5SiO14The doping concentration of crystal is 1%at.
3. a kind of laser self-frequency-doubling's element, by the La of Nd ion doping3Ga5SiO14Crystallization is arranged in ultrashort pulse laser
Laser resonator in, the laser resonator is for obtaining oscillating laser, the La of the Nd ion doping3Ga5SiO14Crystal
The necessary population overturning needed for laser generates is generated under pumping laser pumping, is generated fundamental frequency light and is converted part of fundamental light
For frequency doubled light, the fundamental frequency light and the frequency doubled light vibrate in the laser resonator, obtain stable fundamental frequency and frequency multiplication and swash
Light output, wherein the La of the Nd ion doping3Ga5SiO14The operating temperature of crystal is 14 DEG C, the Nd ion doping
La3Ga5SiO14The doping concentration of crystal is 1%at.
The La of 4.Nd ion doping3Ga5SiO14Crystal is as laser self frequency-doubling crystal from answering in frequency multiplication ultrashort pulse laser
With the laser self frequency-doubling crystal is arranged in the laser resonator of ultrashort pulse laser, and the laser resonator is for obtaining
Obtain oscillating laser, the La of the Nd ion doping3Ga5SiO14Crystal generates under pumping laser pumping must needed for laser generation
It wants population to overturn, generate fundamental frequency light and part of fundamental light is converted into frequency doubled light, the fundamental frequency light and the frequency doubled light are in institute
It states in laser resonator and vibrates, obtain stable fundamental frequency and double-frequency laser output, wherein the Nd ion doping
La3Ga5SiO14The operating temperature of crystal is 14 DEG C, the La of the Nd ion doping3Ga5SiO14The doping concentration of crystal is 1%
at。
5. it is a kind of from frequency multiplication ultrashort pulse laser, swash for directly exporting fundamental frequency and double-frequency laser, including simultaneously as described
The gain media of light device and the laser self frequency-doubling crystal of frequency-doubling crystal, which is characterized in that the laser self frequency-doubling crystal be Nd from
The La of son doping3Ga5SiO14Crystal, wherein the La of the Nd ion doping3Ga5SiO14The operating temperature of crystal is 14 DEG C, institute
State the La of Nd ion doping3Ga5SiO14The doping concentration of crystal is 1%at.
6. laser according to claim 5, which is characterized in that further include:
Pumping source, for providing pumping laser；
Laser resonator, for obtaining oscillating laser, wherein the laser self frequency-doubling crystal is arranged in the laser resonator
It is interior；And
Optical focusing system is arranged between the pumping source and the laser resonator, is used for pumping laser imaging and focusing
Onto the laser self frequency-doubling crystal.
7. laser according to claim 6, which is characterized in that the pumping source is semiconductor laser.
8. laser according to claim 7, which is characterized in that the laser resonator successively includes that plane is defeated along optical path
Appearance, the first plano-concave mirror, the second plano-concave mirror, third plano-concave mirror and semiconductor saturable absorbing mirror, the first plano-concave mirror and
The second plano-concave mirror curvature is identical, and concave surface is relatively and confocal setting, laser self frequency-doubling crystal's setting are flat described first
The focal point of concave mirror and the second plano-concave mirror；The flat output mirror and the semiconductor saturable absorbing mirror swash as described
Two end mirrors of optical cavity.
9. laser according to claim 8, which is characterized in that
The first plano-concave mirror surface is coated with to the side of the pumping source to the anti-reflection deielectric-coating of pumping laser, certainly towards the laser
The side of frequency-doubling crystal is coated with to the anti-reflection deielectric-coating of pumping laser and to the high inverse medium film of oscillating laser；
Two end faces towards the first plano-concave mirror and the second plano-concave mirror of the laser self frequency-doubling crystal are coated with respectively
To the anti-reflection deielectric-coating of pumping laser and to the anti-reflection deielectric-coating of oscillating laser；
The second plano-concave mirror surface is coated with to the side of the laser self frequency-doubling crystal to the anti-reflection deielectric-coating of pumping laser and right
The high inverse medium film of oscillating laser；
The third plano-concave mirror surface is coated with to the side of the second plano-concave mirror and the semiconductor saturable absorbing mirror to oscillation
The high inverse medium film of laser；
The flat output mirror is coated with towards the side of the first plano-concave mirror to the high inverse medium film of oscillating laser, and the other side is coated with
To the anti-reflection deielectric-coating of oscillating laser.
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| CN201310603654.9A CN104659648B (en) | 2013-11-25 | 2013-11-25 | Neodymium-doped barium silicate is from frequency multiplication ultrashort pulse laser |
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| CN108321672B (en) * | 2018-03-12 | 2020-06-23 | 中国科学院苏州生物医学工程技术研究所 | Holmium laser system with high peak power |
| CN111555107B (en) * | 2020-05-15 | 2021-07-23 | 山东大学 | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser |
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