CN108321672B - Holmium laser system with high peak power - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/161—Solid materials characterised by an active (lasing) ion rare earth holmium
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1616—Solid materials characterised by an active (lasing) ion rare earth thulium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Abstract
The invention discloses a holmium laser system with high peak power, which comprises a total reflection device, a laser gain medium, a pumping source, a polarizer, an electro-optic Q-switched crystal and an output mirror which are arranged on a light path in sequence, wherein the electro-optic Q-switched crystal is La doped with MgO in a special proportion3Ga5SiO14The crystal has the initial material compounding ratio of MgO 3.3-3.9 mol% and La2O3＝31.8‑32.1mol％、Ga2O3＝53.7‑53.9mol％、SiO210.6-10.7 mol%; the invention adopts La doped with MgO with specific proportion3Ga5SiO14The crystal is used as an electro-optic Q-switching crystal, and the problem of low optical damage threshold of the existing mid-infrared band electro-optic Q-switching crystal is solved, so that the output of nanosecond holmium laser with high peak power is realized.
Description
Technical Field
The invention relates to a holmium laser system, in particular to a holmium laser system with high peak power, which adopts a special electro-optic Q-switching crystal with high damage threshold.
Background
Urinary calculus is a common disease and frequently encountered disease in urinary surgery, calculus can be found in any part of kidney, bladder, ureter and urethra, urinary calculus is easy to cause obstruction and infection, severe pain symptoms are often accompanied, and great pain is brought to patients.
The holmium laser lithotripsy is firstly applied to the intracavity lithotripsy treatment in 1995, and compared with other intracavity lithotripsy, the holmium laser lithotripsy has obvious advantages, for example, the holmium laser can crush stones with various components and densities, and the disposable lithotripsy rate is high; when in stone breaking, the stones do not move, the generated fragments are small, the stone clearing date is also obviously shortened, and the hospitalization time is reduced; when holmium laser lithotripsy is carried out, the visual field of an endoscope is not interfered, and the generated shock wave effect is very weak, so that the mucous membrane of the ureter cannot be damaged; in addition, the holmium laser can treat polyps simultaneously, so that the curative effect on stones wrapped by the polyps is obviously superior to that of other methods.
At present, holmium laser lithotripsy therapeutic apparatuses on the market are free-running holmium laser systems, the laser output pulse width of the holmium laser systems is in the magnitude of hundreds of microseconds, and the holmium laser lithotripsy therapeutic apparatuses are often poor in effect when facing huge stones, antler-shaped stones, ureteral upper-segment stones, special-component stones and the like. According to the research of E.Duco Jansen et al, nanosecond-level Q-switched holmium laser has the advantages that the pulse width is narrow, the peak power is high, the lithotripsy efficiency is obviously improved compared with that of free-running holmium laser, the lithotripsy effect of Q-switched holmium laser is very good for huge stones, antler-shaped stones, stones with special components and the like, meanwhile, the heat damage to biological tissues is low, and the side effect of the operation is reduced.
However, for the Q-switched holmium laser technology with high peak power and narrow pulse width, some technical obstacles are faced at present. For example, the crystal KD P of the electro-optical Q-switched crystal with mature and excellent performance exists at the near infrared wave band (1064nm), and the crystal with high threshold value of optical damage and good electro-optical performance lacks at the middle infrared wave band; moreover, the holmium laser belongs to a quasi-three-level structure, and under the operation of high-peak-power electro-optic Q-switching, the thermal lens effect and the thermal depolarization effect of the holmium laser are very obvious, so that the laser efficiency is obviously reduced, the peak power is greatly reduced, the beam mode is also deteriorated, and the holmium laser is not beneficial to relevant application.
Disclosure of Invention
Aiming at the defects in the prior art and the problems or the defects, the invention aims to provide a holmium laser system with high peak power, which realizes holmium laser output with high threshold and high peak power through a langasite crystal with high magnesium doping.
In order to achieve the technical purpose and achieve the technical effects, the invention is realized by the following technical scheme that a total reflection device, a laser gain medium, a pumping source, a polarizer, an electro-optic Q-switched crystal and an output mirror are sequentially arranged on an optical path;
wherein the electro-optical Q-switching crystal is La doped with MgO3Ga5SiO14Crystals (LGS crystals) prepared from MgO and La2O3、Ga2O3、SiO2The molar percentage of the used amount of each raw material is as follows:
preferably, in the raw material for preparing the electro-optic Q-switched crystal, La is contained2O3With SiO2The molar ratio of the two is 3: 1.
Preferably, the laser gain medium is a Cr, Tm, Ho: YAG laser rod, and antireflection films with the wave band of 2090nm are plated at two ends of the laser rod.
Preferably, the ion doping concentration of the Cr, Tm, Ho: YAG laser bar is as follows:
Cr： 1.3-1.35mol％；
Tm： 5.8-5.85mol％；
Ho： 0.4-0.41mol％。
preferably, the pumping source is a xenon lamp containing a polytetrafluoroethylene tightly-wrapped cavity, and the xenon lamp and the polytetrafluoroethylene tightly-wrapped cavity are used for jointly pumping the laser gain medium with high efficiency.
Preferably, the polarizer is a white gem sheet which is arranged in three layers in parallel and at equal intervals and forms a Brewster angle with the optical axis.
Preferably, the output mirror is plated with a 2090nm wave band semi-transparent semi-reflective film, and the transmittance of the semi-transparent semi-reflective film at a 2090nm wave band is 10% -15%.
Preferably, the preparation method of the electro-optic Q-switched crystal comprises the following steps:
1) weighing MgO and La according to the specified dosage2O3、Ga2O3、SiO2As a starting material, wherein Ga2O3Selecting 6N grade;
2) fully and uniformly mixing the initial raw materials, briquetting, putting into a platinum crucible, calcining at 900-1200 ℃ for 10-15 hours, and obtaining a polycrystalline material by a solid-phase reaction;
3) putting a polycrystalline material into an iridium crucible, putting the iridium crucible into a corundum crucible, filling a heat-insulating refractory material into the corundum crucible, sealing a furnace body, filling high-purity nitrogen, and adding 2-5% of oxygen; heating by radio frequency and melting fully, preserving heat for 3-5 hours at 120-140 ℃ after melting, and then growing by a pulling method to obtain the electro-optic Q-switched crystal.
The invention has the beneficial effects that: the invention adopts La doped with MgO with specific proportion3Ga5SiO14The crystal is used as an electro-optic Q-switching crystal, and the problem of low optical damage threshold of the existing mid-infrared band electro-optic Q-switching crystal is solved, so that the output of nanosecond holmium laser with high peak power is realized.
Drawings
Fig. 1 is a schematic diagram of a holmium laser system with high peak power;
the reference numbers in the figures illustrate: 1-total reflection device, 2-laser gain medium, 3-pumping source, 4-polarizer, 5-electro-optical Q-switched crystal, 6-output mirror, 7-high reflection film, 8-antireflection film, 9-semi-reflection and semi-transmission film, and 10-output laser.
Detailed Description
The present invention is further described in detail below with reference to the attached drawings so that those skilled in the art can implement the invention by referring to the description text.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
Fig. 1 shows an implementation form according to the invention, which comprises:
the laser resonator comprises a total reflection device 1 and an output mirror 6, wherein the central axis of the total reflection device is on the laser light path, and the total reflection device is used for selecting light with certain frequency and moving along the axis of the resonator and amplifying the light;
the total-reflection device 1 comprises a total-reflection mirror, a high-reflection film 7 with the wavelength of 2090nm is plated on the mirror surface, a semi-transparent semi-reflection film 9 with the wavelength of 2090nm and the transmittance of 15% is plated on the surface of an output mirror 6, and Q-switched holmium laser can be output at the highest efficiency under the transmittance while devices in a cavity are kept undamaged.
The laser gain medium 2 is a Cr, Tm, Ho, YAG laser rod positioned in the laser resonant cavity and used for absorbing the output of the pump lightThe two ends of the 2090nm holmium laser are plated with antireflection films 8 with the wave band of 2090 nm; the ion doping concentration of the Cr, Tm, Ho: YAG laser bar is Cr: 1.32 mol%, Tm: 5.82 mol%, Ho: 0.4 mol%, and at this doping concentration, cross-relaxation occurs between adjacent thulium ions (3H4→3F4，3H6→3F4) One pump source photon can excite two thulium ions to3F4And the stage effectively improves the efficiency of the laser, and can avoid the occurrence of ion clusters caused by overhigh thulium ions, thereby obtaining high-efficiency holmium laser output.
And the pumping source 3 is a xenon lamp containing a polytetrafluoroethylene tight-wrapping cavity and is used for efficiently pumping the laser gain medium 2 together.
The polarizer 4 is a white gem sheet which is arranged in three layers in parallel and at equal intervals and forms a Brewster angle with the optical axis.
An electro-optic Q-switching crystal 5 of La doped with MgO in a specific ratio3Ga5SiO14The crystal comprises the following raw materials in initial ratio: MgO: 3.7 mol% and La2O3：31.8mol％、Ga2O3：53.9mol％、SiO2: 10.6 mol%; when the concentration of the MgO doped in the LGS crystal is about 3.7 mol%, the crystal is accompanied with lattice relaxation, which causes the change of the ion environment and causes the physical properties of the crystal to be changed, particularly the optical damage threshold of the crystal is increased by a plurality of times to reach the level equivalent to KD x P. Meanwhile, the light transmittance of the LGS crystal is rapidly reduced due to the fact that the MgO is doped in too high concentration, so that the excellent electro-optic performance and light transmittance are maintained on the premise that 3.7 mol% of MgO in the initial raw material can guarantee that the LGS crystal has a high optical damage threshold. In the starting batch for growing LGS crystals, e.g. Rugosa Ga2O3If the ratio of (A) is low, LaGaO may occur3Or La2Si2O7Precipitation, which will form new crystal nuclei in the LGS crystal, greatly detracts from its electro-optic properties, and increases Ga appropriately2O3The ratio of (A) to (B) can avoid the occurrence of the above situation and can improve the crystal growth amount to a certain extent. Therefore, the initial mixture ratio of the raw materials is MgO: 3.7 mol%, La2O3：31.8mol％、Ga2O3：53.9mol％、SiO2: when the concentration is 10.6 mol%, the grown LGS crystal is an electro-optic Q-switched crystal with excellent performance in the middle infrared band, and conditions can be provided for realizing output of nanosecond holmium laser with high peak power.
Used as the electro-optical Q-switching crystal 5 is La doped with MgO in a specific ratio3Ga5SiO14A crystal, method of growing the same, comprising the steps of:
1) high-purity MgO and La with the mixture ratio2O3、Ga2O3、SiO2As a starting material, wherein Ga2O3Adopting 6N grade;
2) the raw materials are fully and uniformly mixed, pressed into blocks, placed into a platinum crucible, calcined for 15 hours at 1150 ℃, and subjected to solid phase reaction to obtain a polycrystal material;
3) putting the polycrystalline material into an iridium crucible, putting the iridium crucible into a corundum crucible, filling a heat-insulating refractory material into the corundum crucible, sealing a furnace body, filling high-purity nitrogen, and adding 3% of oxygen; heating and fully melting by radio frequency, preserving heat for 5 hours at 140 ℃ after melting, and then growing by a Czochralski method to obtain the final MgO-doped La with specific proportion3Ga5SiO14And (4) crystals.
The LGS crystal is used as an optical grade for electro-optic Q-switching application, has high requirements on optical performances such as optical uniformity and the like of the crystal, and adopts Ga with high purity2O3The scattering particles in the crystal can be greatly reduced as raw materials, and the optical performance is improved. In addition, the partial pressure of oxygen is kept about 3% in the growth and annealing processes, so that the LGS crystal with relatively transparent color can be obtained, and the light damage threshold of the LGS crystal can be improved.
While embodiments of the invention have been disclosed above, it is not intended to be limited to the uses set forth in the specification and examples. It can be applied to all kinds of fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. It is therefore intended that the invention not be limited to the exact details and illustrations described and illustrated herein, but fall within the scope of the appended claims and equivalents thereof.
Claims (7)
1. A holmium laser system with high peak power is characterized in that a total reflection device, a laser gain medium, a pumping source, a polarizer, an electro-optic Q-switched crystal and an output mirror are sequentially arranged on a light path;
wherein the electro-optical Q-switching crystal is La doped with MgO3Ga5SiO14The raw materials for preparing the electro-optically Q-switched crystal comprise MgO and La2O3、Ga2O3、SiO2The molar percentage of the used amount of each raw material is as follows:
the laser gain medium is a Cr, Tm, Ho, YAG laser rod, and antireflection films with the wave band of 2090nm are plated at two ends of the laser rod.
2. The holmium laser system according to claim 1, characterized in that in the raw material for preparing the electro-optical Q-switched crystal, La2O3With SiO2The molar ratio of the two is 3: 1.
3. The holmium laser system according to claim 1, characterized in that the ion doping concentrations of the Cr, Tm, Ho: YAG laser bars are as follows:
Cr： 1.3-1.35mol％；
Tm： 5.8-5.85mol％；
Ho： 0.4-0.41mol％。
4. the holmium laser system according to claim 1, characterized in that the pump source is a xenon lamp containing a teflon compact cavity.
5. The holmium laser system according to claim 1, characterized in that the polarizer is a white gem plate with three layers parallel and equidistant and placed at brewster's angle to the optical axis.
6. The holmium laser system according to claim 1, characterized in that the output mirror is coated with a 2090nm band transflective film having a transmittance of 10% -15% at 2090nm band.
7. The holmium laser system according to claim 1, characterized in that the preparation method of the electro-optical Q-switching crystal comprises the steps of:
1) weighing MgO and La according to the specified dosage2O3、Ga2O3、SiO2As a starting material, wherein Ga2O3Selecting 6N grade;
2) fully and uniformly mixing the initial raw materials, briquetting, putting into a platinum crucible, calcining at 900-1200 ℃ for 10-15 hours, and obtaining a polycrystalline material by a solid-phase reaction;
3) putting a polycrystalline material into an iridium crucible, putting the iridium crucible into a corundum crucible, filling a heat-insulating refractory material into the corundum crucible, sealing a furnace body, filling high-purity nitrogen, and adding 2-5% of oxygen; heating by radio frequency and melting fully, preserving heat for 3-5 hours at 120-140 ℃ after melting, and then growing by a pulling method to obtain the electro-optic Q-switched crystal.
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| WO1999061686A1 (en) * | 1998-05-22 | 1999-12-02 | Tovarischestvo S Ogranichennoi Otvetstvennostiju Firma 'fomos' | Method for producing monocrystals of lanthanum and gallium silicate |
| CN1166039C (en) * | 2002-05-20 | 2004-09-08 | 山东大学 | Crystal electro-optical Q switch device |
| JP4422678B2 (en) * | 2002-12-17 | 2010-02-24 | イブル・フォトニクス・インコーポレイテッド | Method for manufacturing ferroelectric single crystal film structure using vapor deposition method |
| CN1302586C (en) * | 2004-02-27 | 2007-02-28 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
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| CN102260914A (en) * | 2011-03-09 | 2011-11-30 | 元亮科技有限公司 | Growth method of large dimension LGS crystal |
| CN103001113B (en) * | 2012-12-27 | 2014-08-13 | 中国科学院上海光学精密机械研究所 | 473nm electro-optic q-switch laser |
| CN104659648B (en) * | 2013-11-25 | 2018-12-14 | 中国科学院物理研究所 | Neodymium-doped barium silicate is from frequency multiplication ultrashort pulse laser |
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