CN114108072A - Rare earth ion doped GdScO3Laser crystal preparation and application thereof - Google Patents

Rare earth ion doped GdScO3Laser crystal preparation and application thereof Download PDF

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Publication number
CN114108072A
CN114108072A CN202010885994.5A CN202010885994A CN114108072A CN 114108072 A CN114108072 A CN 114108072A CN 202010885994 A CN202010885994 A CN 202010885994A CN 114108072 A CN114108072 A CN 114108072A
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laser
crystal
gdsco
rare earth
equal
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杭寅
张宇航
李善明
房倩楠
朱影
陶斯亮
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1668—Solid materials characterised by a crystal matrix scandate

Abstract

The invention discloses a rare earth ion doped GdScO which can be used as a gain medium of an infrared band solid laser3Sesquioxide laser crystal relates to laser crystal gain material technical field. The crystal can grow high-quality single crystal by melt method, and has low phonon energy (452 cm)‑1And a broad fluorescence spectrum (. about.100 nm) with Yb incorporation3+、Tm3+、Ho3+After rare earth activates ions, the high-power tunable continuous laser and ultrashort pulse laser output with wave bands of 1 mu m and 2 mu m can be expected to be realized. The crystal growth method provided by the invention can grow high-quality single crystals, and the manufactured all-solid-state infrared band laser has the characteristics of tunable wavelength, ultrashort pulse width and the like, and has wide application in the aspects of laser precision processing, laser medical treatment, military, remote sensing and the likeApplication is carried out.

Description

Rare earth ion doped GdScO3Laser crystal preparation and application thereof
Technical Field
The invention relates to the technical field of laser crystal gain materials, in particular to rare earth ion doped GdScO3Laser crystal preparation and application.
Background
At present, infrared band laser has wide application prospect in the fields of optical communication, ultrafast photonics, photoelectric countermeasure, medical treatment, scientific research and the like, and the commercial material of the rare earth ion doped laser crystal matrix for the band mainly takes Yttrium Aluminum Garnet (YAG) and fluoride as main materials. However, the YAG crystal has intrinsic defects of a matrix, such as narrow absorption bandwidth, large maximum phonon energy, large influence of doping on thermal conductivity, and the like, and is disadvantageous to realization of infrared band laser output. The fluoride crystal has low maximum phonon energy, but has poor chemical stability and mechanical strength, and is difficult to be practically applied. Therefore, the laser using the material as the gain medium has the problems of low efficiency, high pumping threshold, poor pumping wavelength selectivity, difficulty in realizing high power and the like. The sesquioxide crystal represented by lutetium oxide has the advantages of low phonon energy, high thermal conductivity, high damage threshold, high quantum efficiency and the like, and is one of ideal choices of high-quality laser crystals. However, the crystal growth melting point of lutetium oxide, yttrium oxide and the like can reach 2400 ℃, the crystal growth condition is strict, and the equipment requirement is extremely high.
GdScO being simultaneously sesquioxide3Crystal belonging to orthorhombic system and having low phonon energy of about 452cm-1Its melting point is about 2150 deg.C, and it is easier to grow by melt method. In the incorporation of Yb3+,Tm3+,Ho3+Ionic GdScO3In the crystal, doped ions replace Gd3+The lattice position is positioned in the center of an octahedron formed by eight Sc atoms and O atoms, and the laser crystal doped with rare earth ions has stronger electric dipole luminescence transition, so that high-efficiency infrared band laser output can be realized.
In the case of active ions, Yb3+Compared with Nd due to simple electronic energy level structure3+Ions do not have excited state absorption, up-conversion effect and the like, and are attracted attention in a1 mu m wave band. Doped Yb3+The absorption emission spectrum of the laser crystal is moreWide, and is easy to realize ultrashort pulse laser and tunable laser output. The ion radius is small, high-concentration doping is easy to realize, the fluorescence life is long, the laser pulse width is narrow, the quantum defect is small, the quantum defect is only 11 percent, and the quantum defect is larger than that of Nd3+The 30-40% of the laser output is more beneficial to realizing higher oblique efficiency.
Tm doping by semiconductor laser or fiber laser pumping3+，Ho3+The laser crystal of the active ion is the most effective way to directly obtain the laser with 2 μm wave band. The 2 μm wave band laser corresponds to the characteristic absorption spectrum of many gaseous pollutants, can be strongly absorbed by water molecules or other biological tissues, and has important application in the fields of medical treatment, atmospheric monitoring, molecular spectroscopy, laser radar and the like. As most nonlinear optical crystals have small absorption in the wave band, the laser in the wave band can be used as a pumping source of far infrared laser in the wave band of 3-10 mu m, and can be widely applied to the military fields of laser directional infrared interference, laser guidance and the like.
Therefore, the research is directed at the GdScO doped with the rare earth ions of the infrared band all-solid-state laser3The sesquioxide laser crystal has important significance for developing laser output of infrared bands. At present, Yb doping is not seen at home and abroad3+,Tm3+,Ho3+GdScO of3The related report of laser crystal.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a rare earth ion doped GdScO3The sesquioxide laser crystal growth method and the application thereof provide a novel oxide working substance for an all-solid-state infrared laser, and the crystal has important application prospects in the fields of laser precision machining, medical treatment, military, scientific research and the like.
The technical solution of the invention is as follows:
rare earth ion doped GdScO3A laser crystal having the formula: a. thexByGd1-x-yScO3When y is 0, A is Yb, Ho or Tm, and x is more than or equal to 0.001 and less than or equal to 0.2; when y is more than or equal to 0.001 and less than or equal to 0.2, A is Tm, B is Ho, and x is more than or equal to 0.001 and less than or equal to 0.2.
Doped with the above-mentioned rare earth ionsGdScO3The method for growing the sesquioxide laser crystal comprises the following steps:
s1, mixing A with the purity of 4N2O3、B2O3、Gd2O3And Sc2O3As raw material, when mixing2O3]+[B2O3]+[Gd2O3]And [ Sc ]2O3]The molar ratio is 1:1, wherein A3+And B3+The doping amount of ions is 0.1-20 at.%, and the raw materials are uniformly mixed and then pressed into blocks, and are sintered at high temperature in a muffle furnace to obtain ceramic cakes;
s2, placing the ceramic cake into an iridium crucible, completely replacing air in a single crystal furnace with high-purity nitrogen or inert gas, heating by medium-frequency induction, and using GdScO3The crystal is used as seed crystal; heating the crystal furnace to 2050-2150 ℃, wherein the crystal pulling speed is 0.5-3 mm/h and the rotating speed is 3-15 r/min; growing the GdScO doped with the rare earth ions according to the procedures of seeding, necking, shouldering, isometric diameter and ending3A sesquioxide laser crystal;
s3, after the crystal growth is finished, slowly cooling to room temperature at the speed of 10-60 ℃/h. Annealing the grown crystal in air at the temperature of 1200-1500 ℃ for 10-30 hours.
The specific process of step S1 is as follows:
a with the purity of 4N2O3、B2O3、Gd2O3And Sc2O3Mixing the materials according to the mixture ratio, and then mixing the materials in a mixer for more than 5 hours;
pressing the raw materials into a cylindrical cake under the pressure of 0.5-5 GPa;
putting the material cake into a muffle furnace, heating to 1200-1600 ℃ for 5-10 hours, sintering at the temperature for 20-30 hours, cooling to room temperature for 10-15 hours, and fully performing solid phase reaction on the mixed material to obtain the rare earth ion doped GdScO3A ceramic cake of crystals. Or directly using the pressed material cake for crystal growth without sintering.
The rare earth ion doped GdScO3The application of the laser crystal in the infrared band laser output:
a1, rare earth ion doped GdScO3The method for realizing infrared band laser by the sesquioxide laser crystal is characterized by comprising the following steps: comprises a pump source, a focusing system, a laser resonant cavity and YbxGd1-xScO3Laser gain crystal (where 0.001. ltoreq. x. ltoreq.0.2, with a preferred value of x of 0.03). The pumping source is a laser diode laser with the emission wavelength of 970-xGd1-xScO3In the crystal, the laser oscillates back and forth between the input and output cavity mirrors2F7/2→2F5/2And the excited radiation transition between energy levels outputs 1.0-1.1 mu m laser at the output end. Tuning elements (prisms and the like) are added in the cavity mirror to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
A2, rare earth ion doped GdScO3The method for realizing 2 mu m wave band laser by the sesquioxide laser crystal is characterized by comprising the following steps: comprises a pumping source, a focusing system, a laser resonant cavity and TmxGd1-xScO3Laser gain crystals (where 0.001. ltoreq. x. ltoreq.0.2, with a preferred value of x of 0.02). The pumping source is a laser diode laser with the output laser wavelength of 790nm, and the emitted pumping light is collimated and focused by the focusing system and then injected into Tm through the input cavity mirrorxGd1-xScO3In the crystal, the laser oscillates back and forth between the input and output cavity mirrors3F4→3H6The excited radiation between energy levels outputs 1.9-2.1 μm laser at the output end. Tuning elements (prisms and the like) are added in the cavity mirror to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
A3, rare earth ion doped GdScO3The method for realizing 2 mu m wave band laser by the sesquioxide laser crystal is characterized by comprising the following steps: comprises a pumping source, a focusing system, a laser resonant cavity and a HoxGd1-xScO3Laser gain crystals (where 0.001. ltoreq. x. ltoreq.0.2, with a preferred value of x of 0.02). The pump source is a fiber laser with the laser wavelength of 1.9 mu m, and the emitted pump light is injected into the Ho through the input cavity mirror after being collimated and focused by the focusing systemxGd1-xScO3In the crystal, the laser oscillates back and forth between the input and output cavity mirrors5I7→5I8The excited radiation between energy levels outputs 2.0-2.2 μm laser at the output end. Tuning elements (prisms and the like) are added in the cavity mirror to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
A4, rare earth ion doped GdScO3The method for realizing 2 mu m wave band laser by the sesquioxide laser crystal is characterized by comprising the following steps: comprises a pumping source, a focusing system, a laser resonant cavity and TmxHoyGd1-x-yScO3A laser gain crystal (where 0.001. ltoreq. x.ltoreq.0.2, 0.001. ltoreq. y.ltoreq.0.2, with a preferred value of x of 0.05 and a preferred value of y of 0.005). The laser diode laser with the laser wavelength of 790nm emits pumping light which is collimated and focused by a focusing system and injected into Tm through an input cavity mirrorxHoyGd1-x-yScO3In a crystal, the laser oscillates back and forth between the input and output cavity mirrors, passing through Tm3+Is/are as follows3H6→3H4A transition channel for exciting electrons to3H4Excited state due to Tm3+Is/are as follows3F4Energy level and Ho3+Is/are as follows5I7Close energy levels, Ho3+Tm can be obtained by a resonance process3+The energy transferred is at5I7Upper energy level aggregation, after population inversion is realized, through5I7→5I8The stimulated radiation transition between energy levels outputs 2.0-2.2 μm laser at the output end. Tuning elements (prisms and the like) are added in the cavity mirror to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
Drawings
FIG. 1 shows the growth of 3 at% Yb3+:GdScO3And (4) crystals.
FIG. 2 shows Yb at 3 at%3+:GdScO3Fluorescence spectrum of crystal
FIG. 3 is Yb of 3 at%3+:GdScO3Laser device schematic diagram of crystal
FIG. 4 is the grown 2 at% Tm3+:GdScO3Crystal
FIG. 5 is the grown 2 at% Tm3+:GdScO3Emission spectrum of crystal
FIG. 6 shows 0.5 at% Ho grown3+,5at％Tm3+:GdScO3Crystal
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
3at％Yb3+:GdScO3Crystal growth and its use in laser devices. Selecting commercially available Gd with a purity of 4N2O3,Sc2O3And Yb2O3Powder according to Yb0.03Gd0.97ScO3The chemical formula is prepared, evenly mixed, pressed into tablets and sintered to obtain the polycrystalline block material. Adopting crystal growth process of Czochralski method to primarily grow Yb-doped crystal3+GdScO of3A crystal as shown in figure 1. The crystal is processed into 3X 1mm3The spectral performance test is carried out on the crystal sample. FIG. 2 shows the fluorescence spectrum of the crystal, excited with a 970nm laser diode, and the emission cross-section of the crystal is 0.56X 10-20cm2The half-peak width was 80 nm. It can be seen that the crystal has a small emission section and a very wide emission spectrum, and has an important prospect in the aspect of ultrafast laser.
Rare earth ion doped GdScO3The method for realizing infrared laser by the sesquioxide laser crystal comprises the steps that a laser experiment device is shown in figure 3 and is formed by sequentially arranging a pumping source 1, a laser focusing system 2, an input mirror 3, a crystal 4 and an output mirror 5 along a light path; wherein, the pumping source 1 is a laser diode with 970nm wavelength; the laser focusing system 2 is 2 focusing lenses with the focal length of 3 cm; the input mirror 3 is a flat mirror, and the light-passing end face is plated with a dielectric film with high transmittance to 900-fold sand 980nm and high reflection to 1000-fold sand 1100nm, and the crystal 4 is 3 at% Yb3+:GdScO3The effective segregation coefficient of ytterbium ion is 74%, the light-passing length is 8mm, and the light-passing surface is 3 x 3mm2The output mirror 5 is plated with a dielectric film which has high reflection for 900-980nm and partial transmission for 1000-1100nm, the transmittance is 1-10%, and the preferred transmittance is 5%. Tuning elements (prisms and the like) are added in the cavity mirror of the device to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
The novel rare earth ion doped GdScO disclosed in this example3The sesquioxide laser crystal can be used for realizing continuous, tunable and ultrashort pulse laser output of 1.0-1.1 micron wave band.
Example 2
2at％Tm3+:GdScO3Crystal growth and its use in laser devices. Selecting commercially available Gd with a purity of 4N2O3,Sc2O3And Tm2O3Powder according to Tm0.02Gd0.98ScO3The chemical formula is prepared, evenly mixed, pressed into tablets and sintered to obtain the polycrystalline block material. Adopting crystal growth process of Czochralski method to initially grow doped Tm3+GdScO of3The crystal is shown in figure 4. The crystal is processed into 3X 1mm3The spectral performance test is carried out on the crystal sample. FIG. 5 shows the fluorescence spectrum of the crystal, excited by a 790nm laser diode, and it can be seen that the crystal has a very wide emission spectrum and has an important prospect in ultrafast laser.
Rare earth ion doped GdScO3A method for realizing infrared laser by using sesquioxide laser crystal is characterized in that a laser experiment device is similar to a laser device shown in figure 3 of embodiment 1, and the sesquioxide laser crystal is formed by sequentially arranging a pumping source 1, a laser focusing system 2, an input mirror 3, a crystal 4 and an output mirror 5 along a light path; wherein, the pumping source 1 is a laser diode with the wavelength of 790 nm; the laser focusing system 2 is 2 focusing lenses with the focal length of 3 cm; the input mirror 3 is a flat mirror, and the light-passing end face is plated with a dielectric film which is highly transparent to 750-plus-850 nm and highly reflective to 1900-plus-2100 nm wave band, the crystal 4 is 2 at% Tm3+:GdScO3The crystal has a light-passing length of 8mm and a light-passing surface of 3 × 3mm2The output mirror 5 is plated with a dielectric film which has high reflection at 850nm for 750 and 2100nm for 1900 and 2100nm, and has a transmittance of 1-10%, preferably 5%. Tuning elements (prisms and the like) are added in the cavity mirror of the device to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
The novel rare earth ion doped GdScO disclosed in this example3The sesquioxide laser crystal can be used for realizing continuous, tunable and ultrashort pulse laser output of 1.9-2.1 micron wave bands.
Example 3
Ho3+:GdScO3Crystal growth and its use in laser devices. Selecting commercially available Gd with a purity of 4N2O3,Sc2O3And Ho2O3Powder according to Ho0.02Gd0.98ScO3The chemical formula is prepared, evenly mixed, pressed into tablets and sintered to obtain the polycrystalline block material. Adopts a crystal growth process of a Czochralski method to successfully grow the Ho-doped crystal3+GdScO of3And (4) crystals.
Rare earth ion doped GdScO3A method for realizing infrared laser by using sesquioxide laser crystal is characterized in that a laser experiment device is similar to a laser device shown in figure 3 of embodiment 1, and the sesquioxide laser crystal is formed by sequentially arranging a pumping source 1, a laser focusing system 2, an input mirror 3, a crystal 4 and an output mirror 5 along a light path; wherein, the pumping source 1 is a fiber laser with 1940nm wavelength; the laser focusing system 2 is 2 focusing lenses with the focal length of 3 cm; input mirror3 is a flat mirror, and the light-transmitting end face is plated with a dielectric film which is highly transparent to 1900-3+:GdScO3The crystal has a light-passing length of 8mm and a light-passing surface of 3 × 3mm2The output mirror 5 is coated with a dielectric film which has high reflection at 1900-1980nm and partial transmission at 2000-2200nm, and has a transmittance of 1-10%, preferably 5%. Tuning elements (prisms and the like) are added in the cavity mirror of the device to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
The novel rare earth ion doped GdScO disclosed in this example3The sesquioxide laser crystal can be used for realizing 2.0-2.2 micron wave band continuous, tunable and ultrashort pulse laser output.
Example 4
Tm3+,Ho3+:GdScO3Crystal growth and its use in laser devices. Selecting commercially available Gd with a purity of 4N2O3,Sc2O3,Tm2O3And Ho2O3Powder according to Tm0.05Ho0.005Gd0.92ScO3The chemical formula is prepared, evenly mixed, pressed into tablets and sintered to obtain the polycrystalline block material. Adopts a crystal growth process of a Czochralski method to successfully grow the doped Tm3+,Ho3+GdScO of3The crystal is shown in figure 6.
Rare earth ion doped GdScO3A method for realizing infrared laser by using sesquioxide laser crystal is characterized in that a laser experiment device is similar to a laser device shown in figure 3 of embodiment 1, and the sesquioxide laser crystal is formed by sequentially arranging a pumping source 1, a laser focusing system 2, an input mirror 3, a crystal 4 and an output mirror 5 along a light path; wherein, the pumping source 1 is a laser diode with the wavelength of 790 nm; the laser focusing system 2 is 2 focusing lenses with the focal length of 3 cm; the input mirror 3 is a flat mirror, and the light-transmitting end face is plated with a dielectric film with high transmittance to 750-3+:GdScO3The crystal has a light-passing length of 8mm and a light-passing surface of 3 × 3mm2Square of (2), outputThe mirror 5 is coated with a dielectric film having a high reflection at 850nm for 750 and a partial transmission at 2200nm for 2000 and a transmittance of 1-10%, preferably 5%. Tuning elements (prisms and the like) are added in the cavity mirror of the device to realize tuning laser output, and saturable absorbers (graphene and the like) are added to realize ultrashort pulse laser output.
The novel rare earth ion doped GdScO disclosed in this example3The sesquioxide laser crystal can be used for realizing 2.0-2.2 micron wave band continuous, tunable and ultrashort pulse laser output.
The above-mentioned embodiments 1 to 4 are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above-mentioned embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be regarded as equivalent substitutions and are included in the scope of the present invention.

Claims (3)

1. Rare earth ion doped GdScO3Laser crystal, its characterized in that: the chemical formula of the crystal is as follows: a. thexByGd1-x- yScO3When y is 0, x is more than or equal to 0.001 and less than or equal to 0.2, A is Yb, Ho or Tm; when y is more than or equal to 0.001 and less than or equal to 0.2 and x is more than or equal to 0.001 and less than or equal to 0.2, A is Tm and B is Ho.
2. The ion-doped GdScO of claim 13The growth method of the laser crystal is characterized by mainly comprising the following steps of:
s1, mixing A with the purity of 4N2O3、B2O3、Gd2O3And Sc2O3As raw material, when mixing2O3]+[B2O3]+[Gd2O3]And [ Sc ]2O3]The molar ratio is 1:1, wherein A3+And B3+The doping amount of ions is 0.1-20 at.%, and the raw materials are uniformly mixed and then pressed into blocks, and are sintered at high temperature in a muffle furnace to obtain ceramic cakes;
s2, putting the ceramic cake into an iridium crucible,completely replacing air in the single crystal furnace with high-purity nitrogen or inert gas, performing medium-frequency induction heating, and using GdScO3The crystal is used as seed crystal; heating the crystal furnace to 2050-2150 ℃, wherein the crystal pulling speed is 0.5-3 mm/h and the rotating speed is 3-15 r/min; growing the GdScO doped with the rare earth ions according to the procedures of seeding, necking, shouldering, isometric diameter and ending3A sesquioxide laser crystal;
s3, after the crystal growth is finished, slowly cooling to room temperature at the speed of 10-60 ℃/h. Annealing the grown crystal in air at the temperature of 1200-1500 ℃ for 10-30 hours.
3. The rare earth ion doped GdScO of claim 13The laser crystal obtains continuous, tunable and ultrashort pulse laser output in the wave bands of 1 μm and 2 μm.
CN202010885994.5A 2020-08-28 2020-08-28 Rare earth ion doped GdScO3Laser crystal preparation and application thereof Pending CN114108072A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114775056A (en) * 2022-04-25 2022-07-22 同济大学 Chromium-doped yttrium-scandium near-infrared band ultrafast super-strong laser crystal and preparation method and application thereof
CN114921850A (en) * 2022-04-11 2022-08-19 同济大学 Holmium-praseodymium co-doped gadolinium scandate mid-infrared band laser crystal and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106894088A (en) * 2017-02-22 2017-06-27 中国科学院合肥物质科学研究院 Rare earth ion doped perofskite type oxide visible laser crystal
CN108110602A (en) * 2017-12-05 2018-06-01 天水师范学院 A kind of full solid T m:LuScO3Q-switch and mode-locking ceramic laser
CN110284192A (en) * 2019-06-17 2019-09-27 南京同溧晶体材料研究院有限公司 Infrared band laser crystal and preparation method thereof in 3 μm of er-doped scandium acid gadolinium a kind of
CN110295392A (en) * 2019-06-17 2019-10-01 南京同溧晶体材料研究院有限公司 A kind of tunable laser crystal mixes chromium scandium acid gadolinium and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106894088A (en) * 2017-02-22 2017-06-27 中国科学院合肥物质科学研究院 Rare earth ion doped perofskite type oxide visible laser crystal
CN108110602A (en) * 2017-12-05 2018-06-01 天水师范学院 A kind of full solid T m:LuScO3Q-switch and mode-locking ceramic laser
CN110284192A (en) * 2019-06-17 2019-09-27 南京同溧晶体材料研究院有限公司 Infrared band laser crystal and preparation method thereof in 3 μm of er-doped scandium acid gadolinium a kind of
CN110295392A (en) * 2019-06-17 2019-10-01 南京同溧晶体材料研究院有限公司 A kind of tunable laser crystal mixes chromium scandium acid gadolinium and preparation method thereof

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CN114921850A (en) * 2022-04-11 2022-08-19 同济大学 Holmium-praseodymium co-doped gadolinium scandate mid-infrared band laser crystal and preparation method and application thereof
CN114921850B (en) * 2022-04-11 2024-03-26 同济大学 Holmium praseodymium codoping gadolinium scandium acid intermediate infrared band laser crystal and preparation method and application thereof
CN114775056A (en) * 2022-04-25 2022-07-22 同济大学 Chromium-doped yttrium-scandium near-infrared band ultrafast super-strong laser crystal and preparation method and application thereof
CN114775056B (en) * 2022-04-25 2024-02-27 同济大学 Chromium-doped yttrium scandium near-infrared band ultra-fast super-strong laser crystal and preparation method and application thereof

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