CN1302586C - Multi-block crystal electrooptical Q-switch device - Google Patents
Multi-block crystal electrooptical Q-switch device Download PDFInfo
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- CN1302586C CN1302586C CNB2004100237028A CN200410023702A CN1302586C CN 1302586 C CN1302586 C CN 1302586C CN B2004100237028 A CNB2004100237028 A CN B2004100237028A CN 200410023702 A CN200410023702 A CN 200410023702A CN 1302586 C CN1302586 C CN 1302586C
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Abstract
The present invention relates to a multicrystal electrooptic Q switch device which belongs to an application of optical rotation electrooptic crystal materials in the field of photoelectric technology. A crystal electrooptic Q switch device is made of at least two La3 Ga5 SiO14 or La3 Ga5 SiO14 doped with Nd ions, or relevant series crystal materials (La3Ga<5-x>Al<x>SiO14, Sr3Ga2Ge4O14, Na2CaGe6O14, Ca3Ga2Ge4O14, La3Ga<5.5>Nb<0.5>O14 and La3Ga<5.5>Ta<0.5>O14) according to a certain designed cutting shape a designed crystal axis orientation, and an Ho: YAG pulse laser and other near infrared and visible pulse lasers are used as electrooptic Q modulation. The present invention overcomes the defects that the half-wave voltage is high, the extinction ratio is low, the biasing voltage in an electric field affects the optical rotation of a crystal, the extinction ratio of the Q switch device is largely affected by crystal growing stress, the crystal mass requirement is high, etc., existing in the prior art. The crystal electrooptic Q switch device of the present invention has the advantages of low half wave voltage, high extinction ratio, high stability, etc., the condition that the biasing voltage in the electric field affects the optical rotation of the crystal is basically eliminated, the effect of the crystal growing stress is reduced, and the manufacturing cost is reduced.
Description
(1) technical field
The present invention will be referred to a kind of polylith crystal electro-optical Q switch device, belongs to the application of optical activity electrooptic crystal material in field of photoelectric technology.
(2) background technology
In laser technology field, the Q switching device is a kind of requisite optics that uses in the pulse laser.The electro-optical Q-switch device is because of its stable working state, be convenient to other application apparatus on sequential synchronously, in laser system, have a wide range of applications.At present, the electro-optical Q-switch device of useization is many by DKDP crystal, LiNbO
3Crystal, bbo crystal, LGS crystal are made.The electro-optical Q-switch of making of the DKDP crystal has the damage threshold height, the advantage that optical homogeneity is good.But because of its utilization be the longitudinal electro-optic effect of DKDP crystal because the essential annular electrode that adopts, applied field is inhomogeneous, dynamic quenching is lower, switch is tight inadequately, half-wave voltage height, and non-adjustable is bigger with variation of temperature.Because of DKDP is water-soluble crystal, need add damp-proof device, complex manufacturing technology.Use LiNbO
3The electro-optical Q-switch that crystal is made, because utilization is its cross electro-optical effect, half-wave voltage is with the adjustable size of crystal aspect ratio, but LiNbO
3The damage threshold of crystal is low, and optical homogeneity is poor, and under low temperature condition, half-wave voltage is bigger with variation of temperature.Bbo crystal is very big in the crystal technology difficulty that growth length is fit to making electro-optical Q-switch device length, costs an arm and a leg, and still there is little deliquescence in bbo crystal in addition, is extensive use of to be limited to.The LGS crystal has optical activity, and electric field bias influences the optical activity of crystal, and the extinction ratio of Q switching device is subjected to the crystal growth stress influence big.Make especially, during for long wavelength applications, require crystal length very long (greater than 100mm), crystal mass is required harshness, the growing technology difficulty is very big, and cost is very high.Therefore, these crystal electro-optical Q switch devices are still unsatisfactory in application facet.The electro-optical Q-switch device that needs the development new structure.
The LGS crystal belongs to trigonal system, and 32 point groups have multiple functional effects such as electric light, optically-active.Utilize the cross electro-optical effect design of LGS crystal, according to
Relation (wherein λ is used optical maser wavelength, n
oBe the refractive index of the O light of LGS crystal, l/d is the ratio of LGS monocrystalline optical direction length and direction of an electric field thickness, claims aspect ratio), can be by changing its aspect ratio or polylith LGS crystal composite construction comes the half-wave voltage V of trim
π
Except electro optic effect, the LGS crystal also has optical activity simultaneously, and this has brought difficulty to designs.The basic skills that the LGS crystal electro-optical Q switch device solves the optical activity problem is: adopt along the logical light of optical axis direction, and make light wave pass through the LGS crystal twice back and forth in laser resonant cavity, the anglec of rotation that makes its plane of polarization is zero, has eliminated the influence of optical activity.When the LGS crystal electro-optical Q switch device adopted the pressurised driving pattern, above-mentioned method was more effective.But still existing the extinction ratio of Q switching device and laser output mode to be subjected to the big problem of crystal growth stress influence, the application of device is person of modern times's meaning not.Move back the pressure drive pattern for what extensively adopt in the present laser technology, electric field bias influences the optical activity of crystal, and the extinction ratio of Q switching device is little, is difficult to satisfy instructions for use.
(3) summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of electro-optical Q-switch device by the polylith crystal structure is provided.
Technical solution of the present invention is as follows:
Polylith crystal electro-optical Q switch device of the present invention is by at least two La
3Ga
5SiO
14(LGS) or mix Nd ion La
3Ga
5SiO
14Or relevant serial crystalline material La
3Ga
5-xAl
xSiO
14, Sr
3Ga
2Ge
4O
14, Na
2CaGe
6O
14, Ca
3Ga
2Ge
4O
14, La
3Ga
5.5Nb
0.5O
14Or La
3Ga
5.5Ta
0.5O
14Cut type is made, and wherein the x span 0～5.
Above-mentioned each piece crystal is by mechanical clamp or optical cement is mutual vertically by adjacent two crystal X-directions, Y direction is vertical mutually, Z-direction is orientated consistent fixing, each piece crystal X-direction, Y direction, Z-direction orientation unanimity.
The crystal block number of composition device is considered the requirement of application in principle without limits, is good with 2～10.
Used optical cement need have higher anti-laser intensity, and mechanical clamp requires to have higher precision.
Crystalline material design cut type is: each piece crystal is along physics X-direction (its dimension definitions is a thickness d), physics Y direction (its dimension definitions is width w), physics Z-direction (its dimension definitions is long l) cutting.The crystal face metal-coated membrane of X-direction or Y direction, and apply electric field.Polishing of Z-direction both ends of the surface and plating laser anti-reflection film are optical direction.
Above-mentioned size l span: 8mm～1500mm, the span 4mm of thickness d～20mm, the thickness direction added electric field, the span of width w is 4mm～20mm.Structural representation as shown in Figure 4.
The present invention compared with prior art has following excellent results:
1. by the inconsistency of research trigonal system, 32 point group LGS crystal crystallographic axes and physics axle, design with two and the two orthogonal LGS crystal structure of above physics axle electro-optical Q-switch devices.Electric field bias can be compensated mutually to the influence of two crystal optical activities, and what the extra order that crystal growth stress is produced two crystal differed cancels out each other.Thereby improved the extinction ratio and the laser output quality of Q switching device, satisfied and moved back the instructions for use of pressing drive pattern; 2. design with two and two LGS crystal structure electro-optical Q-switch devices that above physics axle is parallel to each other.When having solved long wavelength applications, require crystal length very long (greater than 100mm), crystal mass is required problems such as harsh, that the growing technology difficulty is very big, and cost of manufacture is very high.
Electro-optical Q-switch of the present invention is more suitable in using in the mid power laser of extensive use at present, overcome existing electro-optical Q-switch half-wave voltage height, electric field bias influences the optical activity of crystal, the extinction ratio of Q switching device is subjected to the crystal growth stress influence big, and long wavelength applications requires shortcomings such as harshness to crystal length very long (greater than 100mm) and crystal mass.
(4) description of drawings
Fig. 1 is general monolithic LGS crystal electro-optical Q switch structural representation.Crystalline size in the figure mark.
Fig. 2 is two LGS crystal electro-optical Q switch organigrams.Crystalline size in Fig. 1 mark, directions X (or Y direction) is parallel to each other.The Y direction) is parallel to each other.
Fig. 3 is two LGS crystal electro-optical Q switch organigrams.Crystalline size in Fig. 1 mark, directions X (or Y direction) is vertical mutually.
Fig. 4 is a polylith LGS crystal electro-optical Q switch organigram.Crystalline size in Fig. 1 mark, the directions X of adjacent crystal (or Y direction) is vertical mutually.
(5) embodiment
Embodiment 1:La
3Ga
5SiO
14(LGS) crystal electro-optical Q switch
Construct as shown in Figure 2 with the electro-optical Q-switch that two LGS crystal are made.The long l=35mm of Z direction of every crystal, the width w=10mm of directions X, Y direction thickness d=10mm, the Z direction is led to light, the directions X added electric field, the directions X of two crystal (or Y direction) is parallel to each other.In mixing the YAG laser of Nd, adopt the pressurised driving pattern, half-wave voltage is 2000V, and repetition rate is respectively 1 time/second, in the time of 10 times/second, has realized transferring the purpose of Q, and laser pulse output energy is 1000mJ, and pulse duration is 10ns.
Embodiment 2:La
3Ga
5SiO
14(LGS) crystal electro-optical Q switch
Construct as shown in Figure 2 with the electro-optical Q-switch that two LGS crystal are made.The long l=35mm of Z direction of every crystal, the width w=10mm of directions X, Y direction thickness d=10mm, the Z direction is led to light, and directions X added electric field, the directions X of two crystal (or Y direction) are vertical mutually.In mixing the YAG laser of Nd, adopt and move back the pressure drive pattern, half-wave voltage is 2000V, and repetition rate is respectively 1 time/second, in the time of 10 times/second, has realized transferring the purpose of Q, and laser pulse output energy is 1000mJ, and pulse duration is 10ns.
Embodiment 3: mix Nd ion La
3Ga
5SiO
14(Nd:LGS) crystal electro-optical Q switch
Electro-optical Q-switch with two Nd LGS crystal making.The long l=45mm of Z direction of every crystal, the width w=10mm of directions X, Y direction thickness d=10mm, the Z direction is led to light, and directions X added electric field, the directions X of two crystal (or Y direction) are vertical mutually.
Embodiment 4:Sr
3Ga
2Ge
4O
14(SGG) crystal electro-optical Q switch
Electro-optical Q-switch with two SGG crystal making.The long l=45mm of Z direction of every crystal, the width w=10mm of directions X, Y direction thickness d=10mm, the Z direction is led to light, and directions X added electric field, the directions X of two crystal (or Y direction) are vertical mutually.
Embodiment 5:La
3Ga
5SiO
14(LGS) crystal electro-optical Q switch
Electro-optical Q-switch with four LGS crystal making.The long l=15mm of Z direction of every crystal, the width w=10mm of directions X, Y direction thickness d=10mm, the Z direction is led to light, and directions X (or Y direction) adjacent in the directions X added electric field, four crystal is vertical mutually.
Claims (1)
1, a kind of polylith crystal electro-optical Q switch device is by at least two La
3Ga
5SiO
14Or mix Nd ion La
3Ga
5SiO
14Or relevant serial crystalline material La
3Ga
5-xAl
xSiO
14, Sr
3Ga
2Ge
4O
14, Na
2CaGe
6O
14, Ca
3Ga
2Ge
4O
14, La
3Ga
5.5Nb
0.5O
14Or La
3Ga
5.5Ta
0.5O
14Cut type is made, wherein the x span: 0～5, it is characterized in that described each piece crystal is by mechanical clamp or optical cement is vertical mutually by adjacent two crystal X-directions, Y direction is vertical mutually, Z-direction is orientated consistent fixing.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100237028A CN1302586C (en) | 2004-02-27 | 2004-02-27 | Multi-block crystal electrooptical Q-switch device |
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|---|---|---|---|
| CNB2004100237028A CN1302586C (en) | 2004-02-27 | 2004-02-27 | Multi-block crystal electrooptical Q-switch device |
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|---|---|
| CN1560968A CN1560968A (en) | 2005-01-05 |
| CN1302586C true CN1302586C (en) | 2007-02-28 |
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Cited By (1)
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|---|---|---|---|---|
| CN108321672A (en) * | 2018-03-12 | 2018-07-24 | 中国科学院苏州生物医学工程技术研究所 | A kind of Bladder stone system of high-peak power |
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| CN100524979C (en) * | 2005-02-22 | 2009-08-05 | 中国科学院福建物质结构研究所 | High-power high-quality solid laser |
| CN101662121B (en) * | 2009-09-22 | 2011-05-04 | 青岛海泰光电技术有限公司 | Processing methods of matched crystals used in laser Q-switching device |
| CN102946043B (en) * | 2012-11-22 | 2018-09-28 | 中国科学院福建物质结构研究所 | Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser |
| CN102983491B (en) * | 2012-12-04 | 2014-11-05 | 山东科技大学 | Frequency-doubling KTP (potassium titanium phosphate) electro-optics Q-switching device |
| CN102983490B (en) * | 2012-12-04 | 2014-10-29 | 山东科技大学 | KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
| CN104659648B (en) * | 2013-11-25 | 2018-12-14 | 中国科学院物理研究所 | Neodymium-doped barium silicate is from frequency multiplication ultrashort pulse laser |
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|---|---|---|---|---|
| CN2080721U (en) * | 1990-11-21 | 1991-07-10 | 青岛化工学院 | Electro-optical q switch with polarizer |
| JPH05110182A (en) * | 1991-09-27 | 1993-04-30 | Matsushita Electric Ind Co Ltd | Laser oscillator |
| US5339323A (en) * | 1993-04-30 | 1994-08-16 | Lumonics Corporation | Laser system for controlling emitted pulse energy |
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| JPH0745898A (en) * | 1993-07-28 | 1995-02-14 | Mitsubishi Electric Corp | Laser equipment |
| JPH11330597A (en) * | 1998-04-09 | 1999-11-30 | Jmar Technol Co | Short-pulse laser system |
| JP2002252404A (en) * | 2001-02-27 | 2002-09-06 | Furukawa Co Ltd | Double wavelength laser device |
| CN1402391A (en) * | 2002-05-20 | 2003-03-12 | 山东大学 | Crystal electro-optical Q switch device |
-
2004
- 2004-02-27 CN CNB2004100237028A patent/CN1302586C/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2080721U (en) * | 1990-11-21 | 1991-07-10 | 青岛化工学院 | Electro-optical q switch with polarizer |
| JPH05110182A (en) * | 1991-09-27 | 1993-04-30 | Matsushita Electric Ind Co Ltd | Laser oscillator |
| US5339323A (en) * | 1993-04-30 | 1994-08-16 | Lumonics Corporation | Laser system for controlling emitted pulse energy |
| JPH0745898A (en) * | 1993-07-28 | 1995-02-14 | Mitsubishi Electric Corp | Laser equipment |
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| JPH11330597A (en) * | 1998-04-09 | 1999-11-30 | Jmar Technol Co | Short-pulse laser system |
| JP2002252404A (en) * | 2001-02-27 | 2002-09-06 | Furukawa Co Ltd | Double wavelength laser device |
| CN1402391A (en) * | 2002-05-20 | 2003-03-12 | 山东大学 | Crystal electro-optical Q switch device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321672A (en) * | 2018-03-12 | 2018-07-24 | 中国科学院苏州生物医学工程技术研究所 | A kind of Bladder stone system of high-peak power |
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|---|---|
| CN1560968A (en) | 2005-01-05 |
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