CN108321672A - A kind of Bladder stone system of high-peak power - Google Patents
A kind of Bladder stone system of high-peak power Download PDFInfo
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- CN108321672A CN108321672A CN201810198331.9A CN201810198331A CN108321672A CN 108321672 A CN108321672 A CN 108321672A CN 201810198331 A CN201810198331 A CN 201810198331A CN 108321672 A CN108321672 A CN 108321672A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/161—Solid materials characterised by an active (lasing) ion rare earth holmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1616—Solid materials characterised by an active (lasing) ion rare earth thulium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Abstract
The invention discloses a kind of Bladder stone systems of high-peak power, including the device that is all-trans, laser gain medium, pumping source, the polarizer, electro-optic Q-switched crystal, the outgoing mirror being arranged in light path successively, and the electro-optic Q-switched crystal is the La for adulterating specific proportions MgO3Ga5SiO14Crystal, raw material initial ratio ranging from MgO=3.3 3.9mol%, La2O3=31.8 32.1mol%, Ga2O3=53.7 53.9mol%, SiO2=10.6 10.7mol%；The present invention is using the La for adulterating special ratios MgO3Ga5SiO14Crystal is as electro-optic Q-switched crystal, and infrared band electro-optic Q-switched crystal light injury threshold is low in solving the problems, such as at present, to realize the nanosecond Bladder stone output of high-peak power.
Description
Technical field
The present invention relates to Bladder stone systems, and in particular to a kind of Bladder stone system of high-peak power, system that employs
Special high damage threshold electro-optic Q-switched crystal.
Background technology
Urinary calculi is the common disease and frequently-occurring disease of Urology Surgery, and calculus is found in kidney, bladder, ureter and urethra
Any position, stone in urinary system easily concurrently obstruction and infection, is often accompanied by severe pain symptom, brings great pain to patients.
Ho.YAG laser lithotripsy in nineteen ninety-five first Application in intracavitary lithotripsy in treatment, relative to other intracavitary lithotrities, advantage
Obviously, such as Bladder stone can crush the calculus of various composition and density, and disposable rubble rate is high；Calculus is without movement when rubble,
And the clast generated is smaller, the calculus emptying date is also obviously shortened, and reduces the hospital stays；Endoscopic visual when Ho.YAG laser lithotripsy
It is not disturbed, and the blast effect generated is very weak, because without damaging ureteral mucous；It can be simultaneously additionally, due to Bladder stone
Polyp is handled, therefore the effect of calculus to being wrapped by polyp is substantially better than other methods.
Ho.YAG laser lithotripsy therapeutic equipment on the market at present, is the Bladder stone system of free-running, laser output pulse width
It is past in face of huge gallstone, staghorn stone, proximal ureteral calculus and special composition calculus etc. in hundreds of musec orders
Toward the less effective that can seem.It is studied according to E.Duco Jansen et al., the tune Q Bladder stones of nanosecond order, due to its pulse width,
Peak power is high, and calculifragous efficiency is obviously promoted compared to having for the Bladder stone of free-running, for huge gallstone,
Staghorn stone, special composition calculus etc., it is very good using adjusting Q Bladder stones to carry out lithotrity effect, while it is to biological tissue
Thermal damage is relatively low, reduces the side effect of operation.
But for the tune Q Bladder stone technologies of high-peak power, narrow spaces, it is faced with some technology barriers at present.Such as
There is ripe, superior performance electro-optic Q-switched crystal KD*P near infrared band (1064nm), and then lacks in middle infrared band
The crystal that light injury threshold is high, electro-optical properties are good；Furthermore Bladder stone belongs to quasi-three-level structure, electric-optically Q-switched in high-peak power
Under operating, thermal lensing effect, Depolarization will be apparent upon, and can not only significantly reduce lasing efficiency makes peak power beat greatly
Discount can also make beam mode be deteriorated, and be unfavorable for its related application.
Invention content
For the shortcomings of the prior art and the above problem or defect, the purpose of the present invention is to provide
A kind of Bladder stone system of high-peak power, the holmium of high threshold high-peak power is realized by highly magnesium-doped callium-lanthanum silicate crystal
Laser exports.
To realize above-mentioned technical purpose and the technique effect, the invention is realized by the following technical scheme, in light path
On be disposed with the device that is all-trans, laser gain medium, pumping source, the polarizer, electro-optic Q-switched crystal, outgoing mirror；
Wherein, the electro-optic Q-switched crystal is the La for adulterating MgO3Ga5SiO14Crystal (LGS crystal), it is electric-optically Q-switched to prepare this
The raw material of crystal includes MgO, La2O3、Ga2O3、SiO2, the molar percentage of each raw material dosage is as follows：
Preferably, in the raw material for preparing electro-optic Q-switched crystal, La2O3With SiO2The molar ratio of the two dosage is 3: 1.
Preferably, the laser gain medium is Cr, Tm, Ho:YAG laser bars, the laser bar both ends are coated with 2090nm
The anti-reflection film of wave band.
Preferably, the Cr, Tm, Ho:The ion doping concentration of YAG laser bars is as follows：
Cr：1.3-1.35mol%；
Tm：5.8-5.85mol%；
Ho：0.4-0.41mol%.
Preferably, the pumping source is the xenon lamp for including polytetrafluoroethylene (PTFE) hard-pressed bale chamber, jointly to laser gain medium into
The efficient pumping of row.
Preferably, the polarizer is equidistant for three layers of parallel, and is in the white stone piece that Brewster angle is placed with optical axis.
Preferably, the outgoing mirror is coated with 2090nm wave band semi-transparent semi-reflecting films, and the semi-transparent semi-reflecting film is in 2090nm wave bands
Transmitance is 10%-15%.
Preferably, the preparation method of the electro-optic Q-switched crystal includes the following steps：
1) MgO, La are weighed according to regulation dosage2O3、Ga2O3、SiO2As starting material, wherein Ga2O3Select 6N grades
Not；
2) briquetting after being sufficiently mixed starting material uniformly, is put into platinum crucible, and 10-15 are calcined at 900-1200 DEG C
Hour, polycrystal material is obtained by solid phase reaction；
3) polycrystal material is put into iridium crucible, which is placed in corundum crucible, filled and protect in the corundum crucible
Warm refractory material, furnace sealing are filled with high pure nitrogen, and add the oxygen of 2%-5%；It melts using radio frequency heating and fully,
In 120 DEG C of 3-5 hours of -140 DEG C of range inside holdings after fusing, is then grown using czochralski method, obtain electric-optically Q-switched crystalline substance
Body.
The beneficial effects of the invention are as follows：The present invention is using the La for adulterating special ratios MgO3Ga5SiO14Crystal is as electric light
Adjusting Q crystal, infrared band electro-optic Q-switched crystal light injury threshold is low in solving the problems, such as at present, to realize high-peak power
Nanosecond Bladder stone output.
Description of the drawings
Fig. 1 is the Bladder stone system structure diagram of high-peak power；
Figure label explanation：1- is all-trans device, 2- laser gain mediums, 3- pumping sources, the 4- polarizers, the electric-optically Q-switched crystalline substances of 5-
Body, 6- outgoing mirrors, 7- high-reflecting films, 8- anti-reflection films, 9- part reflective semitransparent films, 10- export laser.
Specific implementation mode
Present invention will be described in further detail below with reference to the accompanying drawings, to enable those skilled in the art with reference to specification text
Word can be implemented according to this.
It should be appreciated that such as " having ", "comprising" and " comprising " term used herein are not discharged one or more
The presence or addition of a other elements or combinations thereof.
Fig. 1 shows a kind of way of realization according to the present invention comprising：
Laser resonator comprising be all-trans device 1 and outgoing mirror 6 of the central axis on laser optical path, the component to
Selection certain frequency and the light moved along resonator axis, and it is amplified；
Wherein, the device 1 that is all-trans is made of a piece of total reflective mirror, and minute surface is coated with the high-reflecting film 7 of 2090nm, the plating of 6 surface of outgoing mirror
It is 15% semi-transparent semi-reflecting film 9 to have 2090nm wave band transmitances, and the output Q-switched Bladder stone of peak efficiency is capable of under the transmitance
Intraluminal device is kept not to be damaged simultaneously.
Laser gain medium 2, the Cr, Tm, Ho for being located at the laser resonance intracavitary for one:YAG laser bars, to absorb
The 2090nm Bladder stones of light output are pumped, both ends are coated with the anti-reflection film 8 of 2090nm wave bands；The Cr, Tm, Ho:YAG laser bars
A concentration of Cr of ion doping：1.32mol%, Tm：5.82mol%, Ho：0.4mol%, under the doping concentration, close on thulium ion it
Between can occur cross relaxation (3H4→3F4,3H6→3F4), two thulium ions can be energized by a pumping source photon3F4Grade, has
Effect improves the efficiency of laser, while can avoid leading to the appearance of ion cluster because thulium ion is excessively high again, efficient to obtain
The Bladder stone of rate exports.
Pumping source 3 is an xenon lamp for including polytetrafluoroethylene (PTFE) hard-pressed bale chamber, is carried out efficiently to laser gain medium 2 jointly
The pumping of rate.
The polarizer 4, it is equidistant for three layers of parallel, and be in the white stone piece that Brewster angle is placed with optical axis.
Electro-optic Q-switched crystal 5, to adulterate the La of special ratios MgO3Ga5SiO14Crystal, raw material initial ratio are：MgO：
3.7mol%, La2O3：31.8mol%, Ga2O3：53.9mol%, SiO2：10.6mol%；For mixing MgO concentration in LGS crystal
In 3.7mol% or so, meeting association lattice relaxation in crystal, this will cause the variation of ionic environment, and make the physical of crystal
Matter mutates, and especially its light injury threshold will promote several times, reach and the comparable levels of KD*P.Meanwhile mixing MgO concentration mistake
Height can cause the light transmission rate of LGS crystal to decline rapidly, therefore the MgO of 3.7mol% can ensure that LGS crystal is gathered around in initial feed
Under the premise of having high light damage threshold, outstanding electro-optical properties and light transmission rate are kept.Grow the original ingredient of LGS crystal
In, if Ga2O3Proportioning it is relatively low, then might have LaGaO3Or La2Si2O7Deng precipitation, this will form new in LGS crystal
Nucleus makes its electro-optical properties have a greatly reduced quality, and suitably increases Ga2O3Proportioning then can to avoid such case generation and can
To improve the long output of crystal to a certain extent.So raw material initial ratio is MgO：3.7mol%, La2O3：31.8mol%,
Ga2O3：53.9mol%, SiO2：When 10.6mol%, the LGS crystal that grows out by be middle infrared band superior performance electric light
Adjusting Q crystal can provide condition to realize that the nanosecond Bladder stone of high-peak power exports.
That as electro-optic Q-switched crystal 5 is the La for adulterating special ratios MgO3Ga5SiO14Crystal, growth method, including with
Lower step：
1) using high-purity MgO, the La of aforementioned proportioning2O3、Ga2O3、SiO2As starting material, wherein Ga2O3Using 6N grades
Not；
2) briquetting after being sufficiently mixed raw material uniformly, is put into platinum crucible, 15 hours is calcined at 1150 DEG C, by solid phase
Reaction obtains polycrystal material；
3) above-mentioned polycrystal material is put into iridium crucible, which is positioned in corundum crucible, in the corundum crucible
Middle filling heat insulating refractory material, furnace sealing are filled with high pure nitrogen, and add 3% oxygen；It is using radio frequency heating and fully molten
Change, in 5 hours of 140 DEG C of range inside holdings after fusing, is then grown using czochralski method, obtain the specific ratio of final doping
The La of example MgO3Ga5SiO14Crystal.
LGS crystal is used for electric-optically Q-switched application as optical grade in the present invention, to optical properties such as the optical homogeneities of crystal
It is required that it is very high, using the very high Ga of purity2O3The scattering particles that can be significantly reduced as raw material in crystal improve optical
Energy.In addition, keeping 3% or so oxygen partial pressure in growth and annealing process, it is brilliant that the relatively transparent LGS of color can be obtained
Body can also improve the light injury threshold of LGS crystal.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With.It can be applied to various suitable the field of the invention completely.It for those skilled in the art, can be easily
Realize other modification.Therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (8)
1. a kind of Bladder stone system of high-peak power, which is characterized in that be disposed with the device that is all-trans in light path, laser increases
Beneficial medium, pumping source, the polarizer, electro-optic Q-switched crystal, outgoing mirror；
Wherein, the electro-optic Q-switched crystal is the La for adulterating MgO3Ga5SiO14Crystal, the raw material for preparing the electro-optic Q-switched crystal include
MgO、La2O3、Ga2O3、SiO2, the molar percentage of each raw material dosage is as follows：
2. Bladder stone system according to claim 1, which is characterized in that in the raw material for preparing electro-optic Q-switched crystal,
La2O3With SiO2The molar ratio of the two dosage is 3: 1.
3. Bladder stone system according to claim 1, which is characterized in that the laser gain medium is Cr, Tm, Ho:YAG
Laser bar, the laser bar both ends are coated with the anti-reflection film of 2090nm wave bands.
4. Bladder stone system according to claim 3, which is characterized in that the Cr, Tm, Ho:The ion of YAG laser bars is mixed
Miscellaneous concentration is as follows：
Cr：1.3-1.35mol%；
Tm：5.8-5.85mol%；
Ho：0.4-0.41mol%.
5. Bladder stone system according to claim 1, which is characterized in that the pumping source is to include polytetrafluoroethylene (PTFE) hard-pressed bale
The xenon lamp of chamber.
6. Bladder stone system according to claim 1, which is characterized in that the polarizer is equidistant for three layers of parallel, and with
Optical axis is in the white stone piece that Brewster angle is placed.
7. Bladder stone system according to claim 1, which is characterized in that the outgoing mirror is coated with 2090nm wave bands semi-transparent half
Anti- film, the semi-transparent semi-reflecting film are 10%-15% in 2090nm wave band transmitances.
8. Bladder stone system according to claim 1, which is characterized in that the preparation method of the electro-optic Q-switched crystal includes
Following steps：
1) MgO, La are weighed according to regulation dosage2O3、Ga2O3、SiO2As starting material, wherein Ga2O3Select 6N ranks；
2) briquetting after being sufficiently mixed starting material uniformly, is put into platinum crucible, is calcined at 900-1200 DEG C 10-15 small
When, polycrystal material is obtained by solid phase reaction；
3) polycrystal material is put into iridium crucible, which is placed in corundum crucible, filling heat preservation is resistance in the corundum crucible
Fiery material, furnace sealing are filled with high pure nitrogen, and add the oxygen of 2%-5%；It melts using radio frequency heating and fully, melts
Afterwards in 120 DEG C of 3-5 hours of -140 DEG C of range inside holdings, is then grown using czochralski method, obtain electro-optic Q-switched crystal.
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| CN201810198331.9A CN108321672B (en) | 2018-03-12 | 2018-03-12 | Holmium laser system with high peak power |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110581434A (en) * | 2019-09-20 | 2019-12-17 | 中国空间技术研究院 | Method for generating 2-micron-waveband single-wavelength stable laser output and laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581434A (en) * | 2019-09-20 | 2019-12-17 | 中国空间技术研究院 | Method for generating 2-micron-waveband single-wavelength stable laser output and laser device |
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