CN117559207B - High-precision narrow linewidth wavelength adjustable pulse laser output method - Google Patents
High-precision narrow linewidth wavelength adjustable pulse laser output method Download PDFInfo
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- CN117559207B CN117559207B CN202410034383.8A CN202410034383A CN117559207B CN 117559207 B CN117559207 B CN 117559207B CN 202410034383 A CN202410034383 A CN 202410034383A CN 117559207 B CN117559207 B CN 117559207B
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- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000005086 pumping Methods 0.000 claims abstract description 8
- 238000002834 transmittance Methods 0.000 claims description 8
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- 238000012544 monitoring process Methods 0.000 abstract description 2
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- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
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- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention relates to a high-precision narrow linewidth wavelength adjustable pulse laser output method, wherein a laser comprises a semiconductor laser pumping source, a laser gain crystal and a Q-switching device; a first F-P etalon is arranged between the semiconductor laser pumping source and the laser gain crystal; a second F-P etalon is arranged between the laser gain crystal and the Q-switching device; the laser gain crystal can generate a multi-longitudinal-mode light beam; the thickness of the first F-P etalon and the thickness of the second F-P etalon are adjustable, and the thickness d of the first F-P etalon is adjusted by the method, so that the first F-P etalon has high reflection on laser to be output; the thickness d of the second F-P etalon is adjusted such that the second F-P etalon is partially transmissive to the laser light to be output. The invention is beneficial to the high-power output of laser, and the thickness of the F-P etalon is regulated by the active feedback control of the industrial personal computer through the real-time monitoring of the broadband laser and the grating spectrometer, so that the high-precision narrow-linewidth adjustable wavelength pulse laser output can be realized.
Description
Technical Field
The invention relates to a high-precision narrow linewidth wavelength adjustable pulse laser output method, and belongs to the technical field of lasers.
Background
Common solid state lasers can emit only a single or a few fixed wavelengths, which is difficult to meet the diversified needs of different applications. With the continuous development of lasers and laser technology and the gradual improvement of requirements of laser application fields, the narrow linewidth wavelength-adjustable laser has a very wide application prospect in the fields of industry, laser detection, laser communication and the like.
In the prior art, the F-P etalon is inserted into the resonant cavity, the multi-beam interference principle is utilized, the high transmittance of a laser mode with specific frequency is realized, the high reflection loss is realized for other modes, and the single longitudinal mode laser output with narrow linewidth is realized. The output longitudinal mode is tuned by changing the insertion angle of the etalon, changing the frequency of the transmitted center wavelength, or adjusting the operating temperature of the gain medium, changing the optical length of the resonant cavity, and detecting the wavelength at the output using a scanning interferometer.
Insertion of the F-P etalon in the cavity complicates the laser structure and introduces insertion loss. With the increase of the tuning fineness of the F-P etalon, the insertion loss in the resonant cavity also increases, and the output power is reduced, so that the high-power output of the laser is not facilitated. Meanwhile, the scanning interferometer is used for detecting the wavelength at the output end, so that the method for tuning the output longitudinal mode is low in accuracy.
Disclosure of Invention
In order to overcome the problems, the invention provides the high-precision narrow-linewidth wavelength adjustable pulse laser output method, the adopted laser resonant cavity has a simple structure, the input and output cavity mirrors are replaced by the F-P etalon with adjustable spacing, redundant elements are not inserted into the resonant cavity, the insertion loss is reduced, and the high-power output of laser is facilitated. The method can realize high-precision narrow linewidth adjustable wavelength pulse laser output by real-time monitoring of the broadband laser and the grating spectrometer and active feedback control of the industrial personal computer to adjust the thickness of the F-P etalon.
The technical scheme of the invention is as follows:
A high-precision narrow linewidth wavelength adjustable pulse laser output method comprises a semiconductor laser pumping source, a laser gain crystal and a Q-switching device; a first F-P etalon is arranged between the semiconductor laser pumping source and the laser gain crystal; a second F-P etalon is arranged between the laser gain crystal and the Q-switching device; the laser gain crystal is capable of generating a multi-longitudinal mode beam; the thickness of the first F-P etalon and the second F-P etalon is adjustable;
The first F-P etalon and the second F-P etalon comprise a movable mirror and a fixed mirror; the movable reflecting mirror and the fixed reflecting mirror are perpendicular to the optical axis of the laser and are arranged in parallel at intervals;
The movable reflector is made of PZT, and further comprises a first PZT actuator connected with the movable reflector of the first F-P etalon and a second PZT actuator connected with the movable reflector of the second F-P etalon;
the system also comprises a control unit, a first broadband laser, a second broadband laser, a first grating spectrometer and a second grating spectrometer; the first broadband laser and the first grating spectrometer detect the center wavelength of the first F-P etalon in real time and transmit the center wavelength to the control unit; the second broadband laser and the two-grating spectrometer detect the center wavelength of the second F-P etalon in real time and transmit the center wavelength to the control unit;
the control unit is an industrial personal computer; the first PZT actuator and the second PZT actuator are connected with the control unit;
the laser output comprises the following steps:
the transmissivity T of the first F-P etalon or the second F-P etalon is:
；
；
wherein R is the basic transmissivity of the first F-P etalon or the second F-P etalon, n is the refractive index of the first F-P etalon or the second F-P etalon, θ is the refraction angle of a light beam after entering the first F-P etalon or the second F-P etalon, λ is the wavelength of incident waves, and d is the thickness of the first F-P etalon or the second F-P etalon;
Obtaining a frequency v corresponding to the transmission peak value of the first F-P etalon or the second F-P etalon:
；
Wherein j is an integer coefficient, and c is the speed of light;
confirming the wavelength lambda 1 of the laser to be output;
adjusting the first F-P etalon thickness d such that the first F-P etalon has a high reflection of the laser light to be output, i.e.:
；
wherein k is a coefficient, and k is a natural number;
the thickness d of the second F-P etalon is adjusted such that the second F-P etalon is partially transmissive to the laser light to be output.
Further, the thickness d of the second F-P etalon is adjusted to meet the optimal transmittance.
Further, the method also comprises the following steps:
Obtaining wavelength lambda 1 of laser to be output;
Detecting a center wavelength of the first F-P etalon in real time by the first broadband laser and the first grating spectrometer; detecting the center wavelength of the second F-P etalon in real time by the second broadband laser and the second grating spectrometer;
The thicknesses of the first and second F-P etalons are adjusted by controlling the first and second PZT actuators so that the first and second F-P etalons have high reflection for the laser light to be output and the second F-P etalon partially transmits the laser light to be output.
The invention has the following beneficial effects: the resonant cavity of the laser has simple structure and small loss in the cavity, and is beneficial to high-power output of laser. In the prior art, the method for performing wavelength tuning by inserting the F-P etalon into the cavity has a complex structure, brings in the insertion loss in the cavity, increases the insertion loss in the cavity along with the increase of the tuning fineness of the etalon, and reduces the output power. The invention does not insert redundant devices in the resonant cavity, but adopts the method of replacing the cavity mirror by adopting the F-P etalon, so that the loss in the cavity is lower, and the invention is more beneficial to the output of high-power laser.
The laser has high wavelength tuning precision and high response speed. In the prior art, a method for performing wavelength tuning by changing the angle of an F-P etalon and detecting mode change through a scanning interferometer cannot perform fine tuning, and only coarse tuning in a certain range can be performed. In the invention, the center wavelength of the F-P etalon is detected in real time by using the broadband laser and the spectrometer, and the movable reflecting mirror is driven to move by the PZT actuator under active feedback control of the industrial personal computer, so that high response speed and high-precision wavelength tuning are realized.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present invention.
The reference numerals in the drawings are as follows:
1. A semiconductor laser pump source; 2. a first F-P etalon; 3. a laser gain crystal; 4. a Q-switching device; 5. a second F-P etalon; 6. a first PZT actuator; 7. a first broadband laser; 8. a first grating spectrometer; 9. a control unit; 10. a second grating spectrometer; 11. a second broadband laser; 12. a second PZT actuator.
Detailed Description
The invention will now be described in detail with reference to the drawings and to specific embodiments.
Referring to fig. 1, a high-precision narrow linewidth wavelength tunable pulse laser output method, a laser comprises a semiconductor laser pumping source 1, a laser gain crystal 3 and a Q-switched device 4; a first F-P etalon 2 is arranged between the semiconductor laser pumping source 1 and the laser gain crystal 3; a second F-P etalon 5 is arranged between the laser gain crystal 3 and the Q-switching device 4; the laser gain crystal 3 is capable of generating a multi-longitudinal mode beam; the thickness of the first F-P etalon 2 and the second F-P etalon 5 is adjustable;
the first F-P etalon 2 and the second F-P etalon 5 comprise a movable mirror and a fixed mirror; the movable reflecting mirror and the fixed reflecting mirror are perpendicular to the optical axis of the laser and are arranged in parallel at intervals;
The movable mirror is made of PZT, and further comprises a first PZT actuator 6 connected with the movable mirror of the first F-P etalon 2 and a second PZT actuator 12 connected with the movable mirror of the second F-P etalon 5;
The system also comprises a control unit 9, a first broadband laser 7, a second broadband laser 11, a first grating spectrometer 8 and a second grating spectrometer 10; the first broadband laser 7 and the first grating spectrometer 8 detect the center wavelength of the first F-P etalon 2 in real time and transmit the detected center wavelength to the control unit 9; the second broadband laser 11 and the second grating spectrometer 10 detect the center wavelength of the second F-P etalon 5 in real time and transmit the detected center wavelength to the control unit 9;
The control unit 9 is an industrial personal computer; the first PZT actuator 6 and the second PZT actuator 12 are connected to the control unit 9;
As shown in fig. 1, the light emitted by the semiconductor laser pump source 1 enters the resonant cavity of the laser (consisting of a first F-P etalon 2 and a second F-P etalon 5) through the first F-P etalon 2, and excites the laser gain crystal 3; the light generated by the laser gain crystal 3 being excited oscillates in the cavity, is amplified, and is output through the second F-P etalon 5.
Light emitted by the first 7 and second 11 broadband lasers enters the first 8 and second 10 grating spectrometers through the first 2 and second 5F-P etalons, respectively.
The laser output comprises the following steps:
The transmissivity T of the first F-P etalon 2 or the second F-P etalon 5 is:
；
；
Wherein R is the fundamental transmittance of the first F-P etalon 2 or the second F-P etalon 5, n is the refractive index of the first F-P etalon 2 or the second F-P etalon 5, θ is the refraction angle of the light beam after entering the first F-P etalon 2 or the second F-P etalon 5, λ is the wavelength of the incident wave, and d is the thickness of the first F-P etalon 2 or the second F-P etalon 5;
obtaining a frequency v corresponding to the transmission peak of the first F-P etalon 2 or the second F-P etalon 5:
；
Wherein j is an integer coefficient, and c is the speed of light;
confirming the wavelength lambda 1 of the laser to be output;
The thickness d of the first F-P etalon 2 is adjusted such that the first F-P etalon 2 has a high reflection of the laser light to be output, i.e.:
；
wherein k is a coefficient, and k is a natural number;
Adjusting the thickness d of the second F-P etalon 5 such that the second F-P etalon 5 is partially transmissive to the laser light to be output; the partial transmission of the laser to be output, that is, the transmission of the second F-P etalon 5 to the laser with output is between the minimum value and the maximum value, and the specific value is set according to the actual requirement.
The gain of the laser to be output in the resonant cavity is larger than the loss, oscillation is obtained, the loss of other wavelengths is larger than the gain, the laser cannot start oscillation, and when the laser to be output reaches the threshold condition of laser beam generation, the target laser beam output is obtained. The Q value of the resonant cavity is suddenly changed through the Q-switching device 4, so that the pulse laser output with the target wavelength is obtained.
By changing the thickness of the first F-P etalon 2 and the second F-P etalon 5, the frequency of the intracavity oscillation mode can be changed, and the purpose of adjustable output wavelength can be achieved.
In one embodiment of the invention, the thickness d of the second F-P etalon 5 is adjusted to meet the optimal transmittance. The optimum transmittance is determined based on gain and loss.
In one embodiment of the invention, the method further comprises the steps of:
Obtaining wavelength lambda 1 of laser to be output;
detecting the center wavelength of the first F-P etalon 2 in real time by the first broadband laser 7 and the first grating spectrometer 8; detecting the center wavelength of the second F-P etalon 5 in real time by the second broadband laser 11 and the second grating spectrometer 10;
The thicknesses of the first F-P etalon 2 and the second F-P etalon 5 are adjusted by controlling the first PZT actuator 6 and the second PZT actuator 12 so that the transmittance of the first F-P etalon 2 and the second F-P etalon 5 with respect to the laser light to be output is changed so that the first F-P etalon 2 has high reflection with respect to the laser light to be output and the second F-P etalon 5 is partially transmitted with respect to the laser light to be output.
This embodiment enables adjustment of the laser output wavelength by real-time detection of the center wavelength of the first F-P etalon 2 and the second F-P etalon 5 and adjustment to the target requirements. As shown in fig. 1, when the movable mirrors of the first F-P etalon 2 and the second F-P etalon 5 are both disposed on the side away from the laser gain crystal 3, adjusting the thicknesses of the first F-P etalon 2 and the second F-P etalon 5 does not affect the structure within the resonant cavity. And a part of the first F-P etalon 2 and a part of the second F-P etalon 5 are arranged outside the resonant cavity, so that the central wavelengths of the first F-P etalon 2 and the second F-P etalon 5 are detected without influencing the internal optical path of the resonant cavity and increasing more loss.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures made by the description of the invention and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the invention.
Claims (3)
1. A high-precision narrow linewidth wavelength adjustable pulse laser output method is characterized in that a laser comprises a semiconductor laser pumping source (1), a laser gain crystal (3) and a Q-switching device (4); a first F-P etalon (2) is arranged between the semiconductor laser pumping source (1) and the laser gain crystal (3); a second F-P etalon (5) is arranged between the laser gain crystal (3) and the Q-switching device (4); the laser gain crystal (3) is capable of generating a multi-longitudinal mode beam; the thickness of the first F-P etalon (2) and the second F-P etalon (5) is adjustable;
The first F-P etalon (2) and the second F-P etalon (5) comprise a movable mirror and a fixed mirror; the movable reflecting mirror and the fixed reflecting mirror are perpendicular to the optical axis of the laser and are arranged in parallel at intervals;
The movable reflector is made of PZT, and further comprises a first PZT actuator (6) connected with the movable reflector of the first F-P etalon (2), and a second PZT actuator (12) connected with the movable reflector of the second F-P etalon (5);
The system also comprises a control unit (9), a first broadband laser (7), a second broadband laser (11), a first grating spectrometer (8) and a second grating spectrometer (10); the first broadband laser (7) and the first grating spectrometer (8) detect the central wavelength of the first F-P etalon (2) in real time and transmit the central wavelength to the control unit (9); the second broadband laser (11) and the second grating spectrometer (10) detect the center wavelength of the second F-P etalon (5) in real time and transmit the center wavelength to the control unit (9);
The control unit (9) is an industrial personal computer; the first PZT actuator (6) and the second PZT actuator (12) are connected to the control unit (9);
the laser output comprises the following steps:
the transmissivity T of the first F-P etalon (2) or the second F-P etalon (5) is:
；
；
Wherein R is the fundamental transmittance of the first F-P etalon (2) or the second F-P etalon (5), n is the refractive index of the first F-P etalon (2) or the second F-P etalon (5), θ is the refraction angle of the light beam after entering the first F-P etalon (2) or the second F-P etalon (5), λ is the wavelength of the incident wave, and d is the thickness of the first F-P etalon (2) or the second F-P etalon (5);
Obtaining a frequency v corresponding to the transmission peak of the first F-P etalon (2) or the second F-P etalon (5):
；
Wherein j is an integer coefficient, and c is the speed of light;
confirming the wavelength lambda 1 of the laser to be output;
Adjusting the thickness d of the first F-P etalon (2) such that the first F-P etalon (2) has a high reflection of the laser light to be output, i.e.:
；
wherein k is a coefficient, and k is a natural number;
The thickness d of the second F-P etalon (5) is adjusted such that the second F-P etalon (5) is partially transmissive to the laser light to be output.
2. A high precision narrow linewidth wavelength tunable pulsed laser output method according to claim 1, characterized by adjusting the thickness d of the second F-P etalon (5) to meet the optimal transmittance.
3. The method for outputting the high-precision narrow-linewidth wavelength tunable pulse laser according to claim 1, further comprising the steps of:
Obtaining wavelength lambda 1 of laser to be output;
-detecting in real time the center wavelength of the first F-P etalon (2) by means of the first broadband laser (7) and the first grating spectrometer (8); -detecting in real time the center wavelength of the second F-P etalon (5) by means of the second broadband laser (11) and the second grating spectrometer (10);
The thicknesses of the first F-P etalon (2) and the second F-P etalon (5) are adjusted by controlling the first PZT actuator (6) and the second PZT actuator (12), so that the transmissivity of the first F-P etalon (2) and the second F-P etalon (5) to output laser light is changed, and the first F-P etalon (2) has high reflection to the output laser light and the second F-P etalon (5) transmits the output laser light partially.
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| GB1248405A (en) * | 1968-11-04 | 1971-10-06 | Sec Dep For Defence Formerly M | Q-switched lasers |
| JP2004087782A (en) * | 2002-08-27 | 2004-03-18 | Sun Tec Kk | Variable wavelength semiconductor laser light source |
| CN103515840A (en) * | 2013-08-07 | 2014-01-15 | 苏州旭创科技有限公司 | External-cavity laser device with tunable wave length |
| CN105092027A (en) * | 2015-05-21 | 2015-11-25 | 北京华泰诺安科技有限公司 | Light source apparatus for generation of comb-like spectrum for spectrometer spectrum calibration |
| CN107482425A (en) * | 2017-10-16 | 2017-12-15 | 中国科学院合肥物质科学研究院 | A kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79um laser pumping source |
| CN112615254A (en) * | 2020-12-18 | 2021-04-06 | 中国科学院半导体研究所 | Tunable external cavity laser |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6940879B2 (en) * | 2002-12-06 | 2005-09-06 | New Focus, Inc. | External cavity laser with dispersion compensation for mode-hop-free tuning |
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- 2024-01-10 CN CN202410034383.8A patent/CN117559207B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1248405A (en) * | 1968-11-04 | 1971-10-06 | Sec Dep For Defence Formerly M | Q-switched lasers |
| JP2004087782A (en) * | 2002-08-27 | 2004-03-18 | Sun Tec Kk | Variable wavelength semiconductor laser light source |
| CN103515840A (en) * | 2013-08-07 | 2014-01-15 | 苏州旭创科技有限公司 | External-cavity laser device with tunable wave length |
| CN105092027A (en) * | 2015-05-21 | 2015-11-25 | 北京华泰诺安科技有限公司 | Light source apparatus for generation of comb-like spectrum for spectrometer spectrum calibration |
| CN107482425A (en) * | 2017-10-16 | 2017-12-15 | 中国科学院合肥物质科学研究院 | A kind of Gao Zhongying, single longitudinal mode, narrow spaces 2.79um laser pumping source |
| CN112615254A (en) * | 2020-12-18 | 2021-04-06 | 中国科学院半导体研究所 | Tunable external cavity laser |
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